US20150132863A1 - Plasma processing apparatus and heater temperature control method - Google Patents
Plasma processing apparatus and heater temperature control method Download PDFInfo
- Publication number
- US20150132863A1 US20150132863A1 US14/368,548 US201314368548A US2015132863A1 US 20150132863 A1 US20150132863 A1 US 20150132863A1 US 201314368548 A US201314368548 A US 201314368548A US 2015132863 A1 US2015132863 A1 US 2015132863A1
- Authority
- US
- United States
- Prior art keywords
- temperature
- heater
- zones
- zone
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
Definitions
- the present invention relates to a plasma processing apparatus and a heater temperature control method.
- Temperature control of a workpiece placed on a mounting table is indispensable for controlling an etching rate, for example. Temperature control affects the uniformity of a plasma process performed on the workpiece and is therefore an important aspect of the plasma process.
- Patent Document 1 discloses a temperature control technique implemented by a heater embedded electrostatic chuck mechanism. According to Patent Document 1, heaters arranged in the heater embedded electrostatic chuck mechanism are divided into two zones including a circular center zone and an edge zone that is concentrically arranged around the outer periphery of the center zone, and temperature control is implemented with respect to each of these zones.
- Patent Document 1 Japanese Laid-Open Patent Publication No. 2008-85329
- the heater area of one zone is still relatively large such that unevenness may be created in the temperature distribution within the same zone even when temperature control is implemented with respect to each zone.
- uniformity in the etching rate and the etching shape may not be achieved.
- Etching characteristics are particularly degraded at a boundary portion between the center zone and the edge zone.
- one aspect of the present invention relates to providing a plasma processing apparatus and a heater temperature control method that are capable of dividing a heater arranged within or near an electrostatic chuck into at least four zones and implementing temperature control with respect to each of these zones.
- a plasma processing apparatus configured to convert a gas into plasma using a high frequency power and perform a plasma process on a workpiece using an action of the plasma.
- the plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and is configured to hold the workpiece, an electrostatic chuck that is arranged on the mounting table and is configured to electrostatically attract the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit.
- the heater is divided into a plurality of zones including a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery.
- the temperature control unit is configured to adjust a control temperature of the heater with respect to each of the plurality of zones.
- a heater temperature control method for controlling a temperature of a heater arranged in a plasma processing apparatus, which is configured to convert a gas into plasma using a high frequency power and perform a plasma process on a workpiece using an action of the plasma.
- the plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and is configured to hold the workpiece, an electrostatic chuck that is arranged on the mounting table and is configured to electrostatically attract the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a storage unit.
- the heater is divided into a plurality of zones including a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery.
- the storage unit stores in advance a correlation between a setting temperature of each of the zones and a current value to be applied to the heater to control the heater to a control temperature of each of the zones, the control temperature being obtained by correcting a deviation of a surface temperature of the electrostatic chuck with respect to the setting temperature of each of the zones and correcting a temperature interference from an adjacent zone with respect to the setting temperature of each of the zones.
- the heater temperature control method includes the steps of acquiring a temperature detected by a temperature sensor arranged in at least one zone of the plurality of zones and setting up the acquired temperature as a setting temperature of the at least one zone, calculating a current value to be applied to the heater of each of the zones based on the acquired setting temperature of the at least one zone and the correlation stored in the storage unit, and controlling the temperature of the heater of each of the zones by applying the calculated current value to the heater of each of the zones.
- a heater arranged within or near an electrostatic chuck may be divided into at least four zones and temperature control may be implemented with respect to each of these zones.
- FIG. 1 illustrates an overall configuration of a plasma processing apparatus according to an embodiment of the present invention
- FIG. 2 is an enlarged view of a heater embedded electrostatic chuck mechanism of FIG. 1 including a heater arranged near an electrostatic chuck;
- FIG. 3 is an enlarged view of a heater embedded electrostatic chuck mechanism including a heater arranged within an electrostatic chuck according to a first modified embodiment
- FIG. 4 is an enlarged view of a heater embedded electrostatic chuck mechanism including a heater arranged near an electrostatic chuck according to a second modified embodiment
- FIG. 5 illustrates exemplary process steps that may be performed by the plasma processing apparatus according to an embodiment of the present invention
- FIG. 6 illustrates process results of implementing temperature control when a heater is divided into two zones
- FIG. 7 illustrates process results of implementing temperature control when the heater is divided into two zones and when the heater is divided into four zones
- FIG. 8 illustrates process results of implementing temperature control when the heater is divided into two zones and when the heater is divided into four zones
- FIG. 9 illustrates an exemplary arrangement of the areas of the zones and power switching at the zones of the heater according to an embodiment of the present invention
- FIG. 10 illustrates another exemplary arrangement of the areas of the zones and power switching at the zones of the heater according to an embodiment of the present invention
- FIG. 11 illustrates an arrangement of the zones of the heater and a temperature sensor according to an embodiment of the present invention
- FIG. 12 illustrates another arrangement of the zones of the heater and temperature sensors according to an embodiment of the present invention
- FIG. 13 illustrates a functional configuration of a control device according to an embodiment of the present invention
- FIG. 14 illustrates a method of calculating correction values ⁇ 1 and ⁇ 1 with respect to a heater setting temperature Y 1 according to an embodiment of the present invention
- FIG. 15 illustrates a method of calculating correction values ⁇ 2 and ⁇ 2 with respect to a heater setting temperature Y 2 according to an embodiment of the present invention
- FIG. 16 illustrates a method of calculating correction values ⁇ 3 and ⁇ 3 with respect to a heater setting temperature Y 3 according to an embodiment of the present invention
- FIG. 17 illustrates a method of calculating correction values ⁇ 4 and ⁇ 4 with respect to a heater setting temperature Y 4 according to an embodiment of the present invention
- FIG. 18 illustrates corrections implemented with respect to the setting temperatures of the zones and corresponding input current values to be applied to the zones
- FIG. 19 is a flowchart illustrating process steps of a temperature control process according to an embodiment of the present invention.
- the plasma processing apparatus 1 illustrated in FIG. 1 is configured as a dual frequency capacitively coupled plasma etching apparatus.
- the plasma processing apparatus 1 includes a cylindrical vacuum chamber (processing chamber) 10 (simply referred to as “chamber” hereinafter) made of aluminum having an alumite-treated (anodized) surface, for example.
- the chamber 10 may be grounded, for example.
- a mounting table 12 configured to hold a semiconductor wafer W (hereinafter, simply referred to as a “wafer W”) thereon as a workpiece is arranged within the chamber 10 .
- the mounting table 12 may be made of aluminum, for example, and is supported on a cylindrical support 16 via an insulating cylindrical holder 14 .
- the cylindrical support 16 extends vertically upward from a bottom of the chamber 10 .
- a focus ring 18 that may be made of silicon, for example, is arranged on a top surface of the mounting table 12 to surround the outer edge of an electrostatic chuck 40 .
- An exhaust path 20 is formed between a sidewall of the chamber 10 and the cylindrical support 16 .
- a ring-shaped baffle plate 22 is arranged in the exhaust path 20 .
- An exhaust port 24 is formed at a bottom portion of the exhaust path 20 and is connected to an exhaust device 28 via an exhaust pipe 26 .
- the exhaust device 28 includes a vacuum pump (not shown) and is configured to depressurize a processing space within the chamber 10 to a predetermined vacuum level.
- a gate valve 30 configured to open/close an entry/exit port for the wafer W is provided at the sidewall of the chamber 10 .
- a first high frequency power supply 31 for drawing ions and a second high frequency power supply 32 for plasma generation are electrically connected to the mounting table 12 via a matching unit 33 and a matching unit 34 , respectively.
- the first high frequency power supply 31 may be configured to apply to the mounting table 12 a first high frequency power of a relatively low frequency (e.g. 0.8 MHz) that is suitable for drawing ions from within the plasma onto the wafer W placed on the mounting table 12 .
- the second high frequency power supply 32 may be configured to apply to the mounting table 12 a second high frequency power of a higher frequency (e.g. 60 MHz) that is suitable for generating a plasma within the chamber 10 .
- the mounting table 12 also acts as a lower electrode.
- a shower head 38 which is described below, is provided at a ceiling portion of the chamber 10 .
- the shower head 38 acts as an upper electrode at a ground potential. In this way, the second high frequency power from the second high frequency power supply 32 is capacitively applied between the mounting table 12 and the shower head 38 .
- the electrostatic chuck 40 configured to hold the wafer W by an electrostatic attractive force is provided on the top surface of the mounting table 12 .
- the electrostatic chuck 40 includes an electrode 40 a that is made of a conductive film and is arranged between a pair of insulating layers 40 b (see FIGS. 2-4 ) or insulating sheets.
- a DC voltage supply 42 is electrically connected to the electrode 40 a via a switch 43 .
- the electrostatic chuck 40 electrostatically attracts and holds the wafer W by a Coulomb force that is generated when a voltage is applied thereto from the DC voltage supply 42 .
- a heat transfer gas supply source 52 is configured to supply a heat transfer gas such as He gas between the backside surface of the wafer W and the top surface of the electrostatic chuck 40 through a gas supply line 54 .
- the shower head 38 disposed at the ceiling portion of the chamber 10 includes an electrode plate 56 having multiple gas holes 56 a and an electrode supporting body 58 configured to detachably hold the electrode plate 56 .
- a gas supply source 62 supplies gas to the shower head 38 via a gas supply pipe 64 , which is connected to a gas inlet 60 a . In this way, the gas may be introduced into the chamber 10 from the multiple gas holes 56 a.
- a magnet 66 is arranged to extend annularly or concentrically around the chamber 10 so that the plasma generated within a plasma generation space of the chamber 10 may be controlled by the magnetic force of the magnet 66 .
- a coolant path 70 is formed within the mounting table 12 .
- a coolant cooled to a predetermined temperature is supplied to the coolant path 70 from a chiller unit 71 via pipes 72 and 73 .
- a heater 75 that is divided into four zones is attached to the backside surface of the electrostatic chuck 40 . Note that the configuration of the heater 75 is described in detail below.
- a desired AC voltage is applied to the heater 75 from an AC power supply 44 . In this way, the temperature of the wafer W may be adjusted to a desired temperature through cooling by the chiller unit 71 and heating by the heater 75 . Note that such temperature control may be performed based on a command from a control device 80 .
- the control device 80 is configured to control the individual components of the plasma processing apparatus 1 such as the exhaust device 28 , the AC power supply 44 , the DC voltage supply 42 , the switch 43 for the electrostatic chuck, the first high frequency power supply 31 , the second high frequency power supply 32 , the matching units 33 and 34 , the heat transfer gas supply source 52 , the gas supply source 62 , and the chiller unit 71 .
- the control device 80 also acquires a sensor temperature detected by a temperature sensor 77 attached to the backside surface of the heater 75 . Note that the control device 80 may be connected to a host computer (not shown).
- the control device 80 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), which are not shown.
- the CPU executes a plasma process according to various recipes stored in a storage unit 83 illustrated in FIG. 13 , for example.
- the storage unit 83 storing the recipes may be configured as a RAM or a ROM using a semiconductor memory, a magnetic disk, or an optical disk, for example.
- the recipes may be stored in a storage medium and loaded in the storage unit 83 via a driver, for example. Alternatively, the recipes may be downloaded from a network (not shown) and stored in the storage unit 83 , for example.
- a DSP digital signal processor
- the functions of the control device 80 may be implemented by software, hardware, or a combination thereof.
- the gate valve 30 When performing an etching process using the plasma processing apparatus 1 having the above-described configuration, first, the gate valve 30 is opened, and a wafer W that is held by a transfer arm is loaded into the chamber 10 . Then, the wafer W is lifted from the transfer arm by pusher pins (not shown), and the wafer W is placed on the electrostatic chuck 40 when the pusher pins are lowered. After the wafer W is loaded, the gate valve 30 is closed. Then, an etching gas is introduced into the chamber 10 from the gas supply source 62 at a predetermined flow rate and flow rate ratio, and the internal pressure of the chamber 10 is reduced to a predetermined pressure by the exhaust device 28 .
- high frequency powers at predetermined power levels are supplied to the mounting table 12 from the first high frequency power supply 31 and the second high frequency power supply 32 .
- a voltage from the DC voltage supply 42 is applied to the electrode 40 a of the electrostatic chuck 40 so that the wafer W may be fixed to the electrostatic chuck 40 .
- a heat transfer gas from the heat transfer gas supply source 52 is supplied between the top surface of the electrostatic chuck 40 and the backside surface of the wafer W. Etching gas sprayed into the chamber 10 from the shower head 38 is excited into a plasma by the first high frequency power from the first high frequency power supply 32 .
- the plasma is generated within the plasma generation space between the upper electrode (shower head 38 ) and the lower electrode (mounting table 12 ), and a main surface of the wafer W is etched by ions and radicals included in the generated plasma. Also, the ions in the plasma may be drawn toward the wafer W by the first high frequency power from the first high frequency power supply 31 .
- the wafer W is lifted and held by the pusher pins, the gate valve 30 is opened, and the transfer arm is introduced into the chamber 10 . Then, the pusher pins are lowered so that the wafer W may be held by the transfer arm. Then, the transfer arm exits the chamber 10 , and a next wafer W is loaded into the chamber 10 by the transfer arm.
- FIG. 2 is an enlarged view of the mounting table 12 and the electrostatic chuck 40 illustrated in FIG. 1 .
- the heater 75 is attached to the backside surface of the electrostatic chuck 40 .
- the heater 75 may be arranged within or near the electrostatic chuck 40 .
- the heater 75 is embedded within the insulating layer 40 b of the electrostatic chuck 40 .
- the heater 75 is divided into a circular center zone A, two middle zones (inner middle zone B and outer middle zone C) arranged concentrically around the outer periphery side of the center zone A, and an edge zone D arranged concentrically around the outermost periphery (see FIGS. 11 and 12 ).
- the middle zones are divided into two zones in the present embodiment, the middle zones may also be divided into three or more zones, for example.
- the middle zones of the heater 75 are preferably divided into at least three zones in order to achieve higher temperature controllability at the middle zones.
- the electrostatic chuck 40 and the mounting table 12 may be attached to one another by an adhesive, for example.
- the heater 75 attached to the electrostatic chuck 40 may be embedded within an adhesive layer 74 and fixed between the electrostatic chuck 40 and the mounting table 12 .
- the arrangement of the heater 75 may be freely altered until right before the electrostatic chuck 40 and the mounting table 12 are bound together by the adhesive layer 74 .
- the heater pattern may still be altered by detaching the electrostatic chuck 40 and the mounting table 12 , altering the heater pattern as desired, reapplying an adhesive on the heater 75 , and reattaching the electrostatic chuck 40 and the mounting table 12 together.
- the heater 75 is embedded within the electrostatic chuck 40
- the heater 75 is fixed within the insulating layer 40 b when the insulating layer 40 b is sintered.
- the heater pattern may not be altered after the heater 75 is embedded within the insulating layer 40 b .
- a heater configuration enabling easy rearrangement of the heater pattern such as that illustrated in FIG. 2 is preferably used rather than the heater configuration having the heater 75 embedded within the electrostatic chuck 40 as illustrated in FIG. 3 .
- the heater 75 is embedded in the adhesive layer 74 .
- the heater 75 may not be arranged near the edge portions of the electrostatic chuck 40 because thin ceramic portions of the insulating layer 40 b may break when the insulating layer 40 b is sintered.
- the heater 75 may be arranged to extend near the edge portions of the electrostatic chuck 40 in FIG. 2 .
- the temperature of the electrostatic chuck 40 may be uniformly controlled up to its outermost edge portions in the heater configuration of FIG. 2 where the heater 75 is attached to the backside surface of the electrostatic chuck 40 .
- the coolant path 70 arranged opposite the heater 75 may be arranged into a pattern corresponding to the zones of the heater 75 as illustrated in FIG. 4 , for example. In this way, temperature controllability and responsiveness may be improved by the cooling by the coolant flowing in the coolant path 70 arranged according to the zones of the heater 75 and heating by the heater 75 .
- FIG. 5 illustrates exemplary process steps of the plasma process that may be implemented by the plasma processing apparatus 1 of the present embodiment. Note that in the following description of the process steps, setting temperatures of a heater divided into two zones (center/edge) corresponding to a comparison example are indicated as exemplary heater temperature control conditions corresponding to one of the process conditions of the plasma process.
- a silicon oxide (SiO 2 ) film 108 having a silicon nitride (SiN) film 106 , an amorphous silicon ( ⁇ -Si) film 104 , an anti-reflection (BARC: bottom anti-reflective coating) film 102 , and a photoresist film 100 stacked thereon in this order is illustrated.
- the silicon oxide film 108 corresponds to an interlayer insulating film formed by CVD (chemical vapor deposition) using TEOS (tetraethoxysilane).
- the BARC (anti-reflection) film 102 may be formed on the amorphous silicon ( ⁇ -Si) film 104 by a coating process, for example.
- the BARC film 102 is made of a polymer resin containing a pigment that absorbs light having a specific wavelength such as ArF excimer laser light that is irradiated toward the photoresist film 100 , for example.
- the BARC film 102 prevents the ArF excimer laser light that has passed through the photoresist film 100 from being reflected back to the photoresist film 100 by the amorphous silicon film 104 .
- the photoresist film 100 may be formed on the BARC film 102 using a spin coater (not shown), for example.
- the photoresist film 100 has a pattern (resist pattern) formed thereon including openings arranged at positions where predetermined holes are to be formed.
- the BARC film 102 is etched using the photoresist film 100 as a mask. In this way, the openings of the resist pattern are transferred to the BARC film 102 .
- the amorphous silicon film 104 is etched using the photoresist film 100 and the BARC film 102 as masks. In this way, the pattern of the BARC film 102 may be transferred to the amorphous silicon film 104 .
- O 2 ashing is performed and the photoresist film 100 and the BARC film 102 are removed.
- the silicon nitride film 106 is etched using the amorphous silicon film 104 as a mask (main etching). In this way, the pattern of the amorphous silicon film 104 may be transferred to the silicon nitride film 106 .
- the silicon oxide film 108 is etched using the amorphous silicon film 104 and the silicon nitride film 106 as masks (over etching). Note that a portion of the silicon nitride film 106 remains on the silicon oxide film 108 when this process step is performed.
- the silicon nitride film 106 is completely removed (breakthrough etching).
- O 2 ashing is performed after the breakthrough etching step. In this way, deposited matter may be removed.
- the resist pattern may be successively transferred to a lower layer film, and holes having a predetermined opening width may ultimately be formed in the silicon oxide film 108 .
- FIG. 6 illustrates deviations in the diameters (hereinafter referred to as “CD”, which stands for critical dimension) of holes formed on the wafer W by the above process steps.
- FIG. 6 illustrates the deviations in the CD measurements of the holes in a radial direction from the wafer center side to the wafer periphery side. The CD measurements were made at four different measurement points arranged 90 degrees apart from each other along a circumferential direction, and such CD measurements were made with respect to multiple wafer positions along the radial direction from the wafer center side to the wafer periphery side.
- FIG. 6 represents the result of superposing the above measurement points along a single axis.
- the horizontal axis of FIG. 6 represents a radial position of the wafer with respect to the wafer center, and the vertical axis of FIG. 6 represents the CD of the holes formed at various positions.
- the graph on the left side of FIG. 6 represents CD measurements of the holes formed on the amorphous silicon film 104 after the etching step for etching the amorphous silicon film 104 illustrated by S 3 of FIG. 5 has been performed.
- the graph on the right side of FIG. 6 represents CD measurements of the holes formed on the silicon oxide film 108 after all the process steps up to S 7 of FIG. 5 have been performed.
- the heater 75 is divided into a center zone and an edge zone at a position approximately 130 (mm) from the wafer center.
- the deviations in the CD of the holes become even wider after all the process steps of FIG. 5 are performed.
- the CD of the holes become larger near the wafer center (widening near wafer center) and the CD of the holes become smaller near the wafer edge (narrowing near wafer edge) owing to an inadequacy in the implementation of temperature control.
- the anomaly (irregularity) in the CD around the wafer center may be attributed to plasma, particularly radicals, existing at a higher density above the wafer center region.
- the anomaly (irregularity) in the CD around the wafer edge may be attributed to a tendency for heat to be trapped within the wafer edge region and prevented from escaping outside.
- the heater 75 is divided into a plurality of zones such that temperature control may be separately implemented on a center zone A and an edge zone D.
- the CD becomes gradually greater toward the outer periphery side even within a middle region between the center zone A and the edge zone D.
- the middle region is divided into two middle zones (i.e., inner middle zone B and outer middle zone C).
- the heater 75 is divided into four zones. Note, however, that the present invention is not limited to the above embodiment, and the middle region of the heater 75 may be divided into three or more zones such that the heater 75 may be divided into a total of five or more zones.
- the top graph of FIG. 7 represents measurement results of the wafer temperature in relation to the heater setting temperature to illustrate in-plane uniformity of the wafer temperature in exemplary cases where temperature control is implemented on the heater 75 that is divided into two zones. That is, the top graph of FIG. 7 represents average values of the wafer temperature in cases where the center zone of the two zones is controlled to a setting temperature of 60° C., and the edge zone of the two zones is controlled to a setting temperature of 40° C., 50° C., 60° C., and 70° C. while plasma processes are performed according to the process steps illustrated in FIG. 5 . An increase in the wafer temperature with respect to the setting temperature may be attributed to heat input from plasma.
- in-plane uniformity of the wafer temperature cannot be achieved in any of the above cases.
- the temperature of the middle zone cannot be controlled in the above cases, substantial deviations occur at the outer periphery side of the center zone and the edge zone.
- the wafer temperature at the wafer edge side increases as the heater setting temperature increases owing to a tendency for heat to be trapped within the wafer edge region and prevented from escaping outside.
- the lower graph of FIG. 7 indicates a curved line S1 representing an estimated relationship between the heater setting temperature and the in-plane uniformity of the wafer temperature in a case where temperature control is implemented on the heater 75 that is divided into four zones.
- the diamond-shaped dots plotted in the lower graph of FIG. 7 represent CDs of holes formed in a case where the heater 75 is divided into two zones and the center zone and the edge zone are controlled to setting temperatures of 60° C. and 40° C., respectively.
- the square-shaped dots plotted in the lower graph of FIG. 7 represent CDs of holes formed in a case where the heater 75 is divided into two zones and the center zone and the edge zone are controlled to setting temperatures of 60° C. and 50° C., respectively.
- the lower graph of FIG. 7 indicates a curved line S2 representing an estimated relationship between the heater setting temperature and the in-plane uniformity of the wafer temperature in a case where the center zone and the edge zone of the heater 75 that is divided into two zones are controlled to setting temperatures of 60° C. and 60° C., respectively.
- the heater 75 is divided into four zones, and the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D are controlled to setting temperatures of 70° C., 60° C., 70° C., and 50° C., respectively, for example, improved in-plane uniformity of the wafer temperature may be achieved as illustrated by the curved line S1. That is, in the above case, the setting temperatures for the center zone A and the outer middle zone C are set at a higher temperature of 70° C. compared to the setting temperature 60° C. for the inner middle zone B. In this way, a decrease in CD deviations and improved in-plane uniformity of the wafer temperature may be expected.
- the right side graph of FIG. 8 represents process results obtained from performing the process steps according to the recipe.
- the left side graph of FIG. 8 illustrates the process results in the case where the heater 75 is divided into two zones as a comparison example. As can be appreciated by comparing the left side and right side graphs of FIG.
- the “widening near wafer center” and the “narrowing near wafer edge” of the CD that occur when the heater 75 is divided into two zones cannot be observed thereby indicating that in-plane uniformity of the wafer temperature can be achieved.
- the setting temperatures of the center zone/edge zone during the etching process step for etching the BARC film 102 in the case of implementing the 2-zone temperature control were prescribed to be 60/50° C.
- the setting temperatures of the center zone/edge zone during the etching process step for etching the silicon nitride film 106 in the case of implementing the 2-zone temperature control were prescribed to be 35/35° C.
- the setting temperatures of the center zone/inner middle zone/outer middle zone/edge zone during the etching process step for etching the BARC film 102 in the case of implementing the 4-zone temperature control were prescribed to be 60/45/45/43° C.
- the setting temperatures of the center zone/inner middle zone/outer middle zone/edge zone during the etching process step for etching the silicon nitride film 106 in the case of implementing the 4-zone temperature control were prescribed to be 40/45/50/50° C.
- FIGS. 9 and 10 illustrate exemplary embodiments of the heater 75 that is divided into four zones.
- the center zone A has the largest area, and the four zones have areas that become gradually smaller from the center zone A toward the edge zone D. That is, the area of the heater zone at the outermost edge is the smallest.
- temperature control may be more intricately performed as the temperature control position comes closer toward the outermost periphery, and in this way, temperature uniformity may be improved.
- the center zone A has the largest area, and the areas of the zones become smaller from the center zone A toward the outer middle zone C.
- the area of the outer middle zone C is smaller than the edge zone D. That is, the outer middle zone C, which is second closest to the outermost periphery, has the smallest area.
- temperature control may be more intricately performed with respect to the outermost middle zone positioned toward the inner side with respect to the outermost edge zone, and in this way, temperature uniformity may be improved.
- the AC power supply 44 may be switched on/off at the middle zones (inner middle zone B and/or outer middle zone C).
- middle zones inner middle zone B and/or outer middle zone C
- FIG. 10 by switching on/off the power of the outer middle zone C having the smallest zone area, temperature interference from the outer middle zone C to its adjacent zones D and B may be prevented.
- temperature control may be implemented based on the correlation between the temperatures of the adjacent zones D and B, and temperature controllability of the wafer W may be improved in some cases.
- energy consumption may be reduced.
- the AC power supply 44 may not be switched on/off at the center zone A and the edge zone D. This is because plasma exists at a high density around the wafer center and heat tends to be trapped within the outermost region of the wafer to be prevented from escaping outside as described above. That is, the center zone A and the edge zone D have anomalies in their temperature distributions such that temperature control at these regions is believed to be indispensable.
- the heater 75 arranged within or near the electrostatic chuck 40 is divided into at least four zones.
- temperature control may be separately implemented with respect to the center zone A and the outermost edge zone D in which anomalies occur due to plasma conditions and/or the apparatus configuration, for example.
- temperature control of the heater may be more intricately conducted.
- in-plane uniformity of the wafer temperature may be achieved. Note that in the case where the size (diameter) of the wafer is greater than or equal to 450 mm, the area of the middle region becomes relatively large and accurate temperature control of the middle region becomes difficult.
- the middle region may be subdivided into smaller zones according to the size of the wafer upon implementing temperature control.
- the heater 75 is divided into four zones.
- the center zone A and the edge zone D each have one zone arranged adjacent thereto.
- the middle zones B and C in the middle region each have two zones arranged adjacent thereto.
- the zones receive temperature interference from their adjacent zones.
- the middle zones B and C in the middle region receive temperature interference from both sides.
- more accurate temperature control may be possible by correcting the temperature interference from the adjacent zones with respect to the setting temperatures of the zones.
- the surface temperature of the electrostatic chuck 40 may not always be equal to the setting temperatures of the zones. That is, a deviation may occur between the surface temperature of the electrostatic chuck 40 and the temperature of the heater 75 . Thus, more accurate temperature control may be possible by correcting such a deviation.
- a heater temperature control method that involves correcting the temperature interference from adjacent zones, correcting the deviation between the temperature of the heater 75 and the surface temperature of the electrostatic chuck 40 , and using a corrected temperature obtained by performing the above corrections to control the temperature of the heater 75 at each of the zones.
- first correction values for correcting deviations of the surface temperature of the electrostatic chuck 40 with respect to the setting temperatures of the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D are represented as ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 , respectively.
- second correction values for correcting the temperature interferences from zones adjacent to the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D are represented as ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 , respectively.
- the temperature sensor 77 is used in setting up the above correction values. As illustrated in FIG.
- the temperature sensor 77 is arranged on the backside surface of the heater 75 within the inner middle zone B.
- the position of the temperature sensor 77 is not limited to the above, and the temperature sensor 77 may be arranged in other zones as well.
- the number of temperature sensors 77 arranged on the heater 75 is not limited to one.
- a plurality of temperature sensors may be arranged.
- at least three temperature sensors are arranged on a circumference of a circle.
- four temperature sensors 77 a , 77 b , 77 c , and 77 d are arranged on a circumference of a circle. In this way, a temperature distribution in the circumferential direction may be accurately detected.
- the above heater temperature control method may be executed by the control device 80 .
- a functional configuration of the control device 80 is described with reference to FIG. 13 , and operations of the control device 80 are described thereafter with reference to FIG. 19 .
- FIG. 13 illustrates the functional configuration of the control device 80 .
- the control device 80 includes an acquisition unit 81 , a storage unit 83 , a temperature setting unit 84 , a temperature control unit 85 , a determination unit 86 , and a plasma process execution unit 87 .
- the acquisition unit 81 continually inputs the temperature of the backside surface of the heater 75 detected by the temperature sensor 77 .
- the acquisition unit 81 may input the temperatures detected by the plurality of temperature sensors 77 .
- the temperature setting unit 84 calculates the first values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 for correcting the deviations of the surface temperature of the electrostatic chuck 40 with respect to the setting temperatures of the zones, and the second values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 for correcting the temperature interferences from adjacent zones with respect to the setting temperatures of the zones, and stores the calculated correction values in the storage unit 83 . Note that methods for calculating the correction values are described in detail below.
- the storage unit 83 stores a correlation between the setting temperatures of the zones and current values to be applied to the heater 75 such that the zones may be controlled to control temperatures that are corrected based on the first values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 , and the second values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 .
- the storage unit 83 may store process recipes prescribing the steps and conditions of a process. For example, a process recipe stored in the storage unit 83 may prescribe the steps and the process conditions for executing each step of the process illustrated in FIG. 5 .
- the temperature control unit 85 adjusts the control temperature of the heater 75 with respect to each of the zones.
- the temperature control unit 85 may correct the deviation of the surface temperature of the electrostatic chuck 40 with respect to the setting temperature of each of the zones upon adjusting the control temperature of the heater 75 with respect to each of the zones.
- the temperature control unit 85 may correct the temperature interference from an adjacent zone with respect to the setting temperature of each of the zones upon adjusting the control temperature of the heater 75 with respect to each of the zones.
- the temperature control unit 85 may make one of the above adjustments or both of the above adjustments, for example.
- the temperature control unit 85 may adjust the control temperature of the heater 75 with respect to each of the zones based on at least one of the first values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 , and the second values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 stored in the storage unit 83 .
- the temperature control unit 85 may set up the temperature detected by the temperature sensor 77 arranged in a given zone as a setting temperature of the corresponding zone, and calculate the current value to be applied to each of the zones of the heater 75 based on the correlation between the setting temperatures of the zones and the current values to be applied to the zones stored in the storage unit 83 .
- the determination unit 86 determines that it is time to replace the electrostatic chuck 40 when at least one of the calculated current values for the heater of each of the zones is less than a threshold value. That is, as the heater 75 is repeatedly used, the heater 75 may be detached from the ceramic portion of the electrostatic chuck 40 due to thermal expansion, for example. In such case, the detached portion may be retained at a high temperature, and as a result, the current value may decrease.
- the threshold value may be stored in the storage unit 83 , for example.
- the plasma process execution unit 87 executes a plasma etching process according to a relevant process recipe stored in the storage unit 83 .
- correction functions for obtaining heater setting temperatures Y 1 , Y 2 , Y 3 , and Y 4 are described. Specifically, methods for calculating the first values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 , and the second values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 ; and obtaining corrected heater control temperatures using the first values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 , and the second values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 are described with reference to FIGS. 14-18 .
- FIG. 14-18 FIG.
- FIG. 14 illustrates a method of calculating the correction values ⁇ 1 and ⁇ 1 with respect to the heater setting temperature Y 1 according to the present embodiment.
- FIG. 15 illustrates a method of calculating the correction values ⁇ 2 and ⁇ 2 with respect to the heater setting temperature Y 2 according to the present embodiment
- FIG. 16 illustrates a method of calculating the correction values ⁇ 3 and ⁇ 3 with respect to the setting temperature Y 3 according to the present embodiment
- FIG. 17 illustrates a method of calculating the correction values ⁇ 4 and ⁇ 4 with respect to the heater setting temperature Y 4 according to the present embodiment.
- FIG. 18 illustrates corrections implemented with respect to the setting temperatures of the zones and input current values to be applied to the zones.
- the temperature of the heater 75 may be more accurately controlled.
- variables X 1 , X 2 , X 3 , and X 4 represent target temperatures of the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D; that is, temperatures to which the surface temperatures of the electrostatic chuck 40 at the above zones should actually be controlled.
- Variables Y 1 , Y 2 , Y 3 , and Y 4 represent setting temperatures of the heater 75 at the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D.
- Variables Z 1 , Z 2 , and Z 3 represent adjacent temperatures as temperature interferences from adjacent zones. Specifically, referring to FIG. 14 , the adjacent temperature interfering with the center zone A is represented by the variable Z 1 .
- the adjacent temperatures interfering with the inner middle zone B are represented by the variables Z 1 and Z 2 ; referring to FIG. 16 , the adjacent temperatures interfering with the outer middle zone C are represented by the variables Z 2 and Z 3 ; and referring to FIG. 17 , the adjacent temperature interfering with the edge zone D is represented by the variable Z 3 .
- the variables X 1 , X 2 , X 3 , and X 4 representing the target temperatures of the zones (surface temperature of the electrostatic chuck 40 ) and the variables Z 1 , Z 2 , and Z 3 representing the adjacent temperatures are measured using infrared (IR) spectroscopy.
- the variables Y 1 , Y 2 , Y 3 , and Y 4 representing setting temperatures of the heater 75 are measured using a fluorescence thermometer.
- the relationship between the heater setting temperature Y 1 and the target temperature X 1 taking into account the influence of the adjacent temperature Z 1 may be expressed by the following formula (1):
- first correction values ⁇ 3 and ⁇ 4 and the second correction values ⁇ 3 and ⁇ 4 for controlling the temperatures at the outer middle zone C and the edge zone D may be calculated based on the following formulas (3) and (4):
- the temperature setting unit 84 may calculate in advance all the correction values indicated in FIG. 18 for all conceivable combinations of temperature setting values of the adjacent zones.
- the calculated first correction values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 , and the second values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 are stored in the storage unit 83 .
- the storage unit 83 stores a correlation between the setting temperatures Y 1 , Y 2 , Y 3 , and Y 4 of the zones and current values I 1 , I 2 , I 3 , and I 4 to be applied to the zones of the heater 75 such that the heater temperatures at the zones may be equal to the control temperatures calculated for the zones based on the first correction values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 , and the second correction values ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 .
- correction accuracy may be further improved by additionally taking into account influences from other zones that are not directly adjacent to the zone of interest.
- the relationship may be approximated taking into account influences not only from the center zone A and the outer middle zone C but also the edge zone D using ⁇ 2 (Z 1 , Z 2 , Z 3 ) (see formula (6) indicated below). In this way, correction accuracy may be further improved.
- correction values may be calculated in advance taking into account influences not only from adjacent zones but other remote zones using formulas (5)-(8) indicated below.
- Z represents the adjacent temperature of an adjacent zone.
- the first correction values ⁇ 1 - ⁇ 4 and the second correction values ⁇ 1 - ⁇ 4 for the zones are calculated in advance and stored in the storage unit 83 .
- the correlation between the corrected heater setting temperatures Y 1 -Y 4 and the input current values I 1 -I 4 is stored in the storage unit 83 .
- the acquisition unit 81 acquires the sensor temperature T 2 detected by the temperature sensor 77 that is arranged at the inner middle zone B (step S 100 ). Then, the temperature setting unit 84 uses the sensor temperature T 2 as a base temperature, assigns the sensor temperature T 2 to the heater setting temperature Y 2 of formula (2), assigns a target value to the target temperature X 2 of formula (2), and calculates the adjacent temperatures Z of adjacent zones (step S 102 ).
- the temperature setting unit 84 assigns target values to the target temperatures X 1 , X 3 , and X 4 , and assigns the adjacent temperatures Z of the adjacent zones to calculate the heater setting temperatures Y 1 , Y 3 , and Y 4 (step S 104 ).
- the temperature control unit 85 calculates the heater input current values I 1 , I 2 . I 3 , and I 4 corresponding to the heater setting temperatures Y 1 , Y 2 , Y 3r and Y 4 , and applies the heater input current values I 1 , I 2 , I 3 , and I 4 to the corresponding zones of the heater 75 to thereby control the heater temperatures at the corresponding zones (step S 106 ).
- the determination unit 86 determines whether any of the heater input current values I 1 , I 2 , I 3 , and I 4 is less than a predetermined threshold value. Upon determining that at least one of the heater input current values I 1 , I 2 , I 3 , and I 4 is less than the predetermined threshold value, the determination unit 86 determines that it is time to replace the electrostatic chuck 40 (step S 108 ) after which the present process is ended. When the determination unit 86 determines that none of the heat input current values I 1 , I 2 , I 3 , and I 4 is less than the predetermined threshold value, the present process is immediately ended.
- the heater 75 arranged within or near the electrostatic chuck 40 is divided into at least four zones.
- temperature control may be separately implemented with respect to the center zone A and the outermost edge zone D where anomalies are likely to occur due to plasma conditions or the apparatus configuration.
- more intricate temperature control of the heater 75 may be enabled by dividing the middle region into at least two zones. As a result, in-plane uniformity of the wafer temperature may be achieved.
- the zones receive temperature interference from adjacent zones.
- the middle zones are particularly susceptible to large temperature interferences. Accordingly, in a temperature control method that may be implemented by the plasma processing apparatus 1 of the present embodiment, correction may be implemented on temperature interferences from adjacent zones with respect to the setting temperatures of the zones.
- the setting temperatures of the zones may incorporate corrections on deviations in the surface temperature of the electrostatic chuck 40 arranged above the heater 75 . In this way, highly accurate temperature control may be enabled.
- a plasma etching process is described above as an example of a plasma process that may be executed by a plasma processing apparatus, the present invention is not limited to plasma etching, but may also be applied to plasma processing apparatuses that perform plasma chemical vapor deposition (CVD) for forming a thin film on a wafer through CVD, plasma oxidation, plasma nitridization, sputtering, or ashing, for example.
- CVD plasma chemical vapor deposition
- a plasma processing apparatus is not limited to a capacitively coupled plasma processing apparatus that generates capacitively coupled plasma (CCP) by discharging a high frequency generated between parallel plate electrodes within a chamber.
- the present invention may also be applied to an inductively coupled plasma processing apparatus that has an antenna arranged on or near a chamber and is configured to generate inductively coupled plasma (ICP) under a high frequency induction field, or a microwave plasma processing apparatus that generates a plasma wave using microwave power.
- ICP inductively coupled plasma
- the workpiece subject to a plasma process in the present invention is not limited to a semiconductor wafer but may be a large substrate for a flat panel display (FPD), an electroluminescence (EL) element, or a substrate for a solar battery, for example.
- FPD flat panel display
- EL electroluminescence
- the heater may be arranged such that the center zone and the at least two middle zones have areas that become smaller toward the outer periphery side, and an outermost middle zone of the at least two middle zones has an area that is smaller than an area of the edge zone arranged at the outer periphery side of the outermost middle zone.
- the heater may be arranged such that the center zone, the at least two middle zones, and the edge zone have areas that become smaller toward the outer periphery side.
- the temperature control unit may turn off the heater of the outermost middle zone and adjust the control temperature of the heater of the zones other than the outermost middle zone.
- the temperature control unit may correct a deviation of a surface temperature of the electrostatic chuck with respect to a setting temperature of each of the zones upon adjusting the control temperature of the heater with respect to each of the zones.
- the temperature control unit may correct a temperature interference from an adjacent zone with respect to a setting temperature of each of the zones upon adjusting the control temperature of the heater with respect to each of the zones.
- a plasma processing apparatus may further include a temperature setting unit configured to set up a first correction value for correcting a deviation of a surface temperature of the electrostatic chuck with respect to the setting temperature of each of the zones and a second correction value for correcting the temperature interference from the adjacent zone with respect to the setting temperature of each of the zones.
- the temperature control unit may adjust the control temperature of the heater with respect to each of the zones based on the first correction value and the second correction value.
- the temperature setting unit may store in advance in a storage unit a correlation between the setting temperature of each of the zones and a current value to be applied to the heater of each of the zones to control the heater to the control temperature that is calculated with respect to each of the zones based on the first correction value and the second correction value.
- the temperature control unit may acquire a temperature detected by a temperature sensor arranged in at least one zone of the plurality of zones, set up the acquired temperature as a setting temperature of the at least one zone, and calculate the current value to be applied to the heater of each of the zones based on the setting temperature of the at least one zone and the correlation stored in the storage unit.
- a plasma processing apparatus may further include a determination unit configured to determine that a time for replacement of the electrostatic chuck has been reached when at least one current value of the calculated current value for the heater of each of the zones is less than a predetermined threshold value.
- At least three temperature sensors may be arranged along a circumference of a circle within the at least one zone.
- a plasma processing apparatus may further include a coolant path arranged opposite the heater, which is arranged within or near the mounting table; and a chiller device configured to circulate a coolant within the coolant path.
- the mounting table may hold a workpiece having a diameter greater than or equal to 450 mm, and the middle zones of the heater may be concentrically divided into at least three zones.
Abstract
A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit adjusts a control temperature of the heater with respect to each of the zones.
Description
- The present invention relates to a plasma processing apparatus and a heater temperature control method.
- Temperature control of a workpiece placed on a mounting table is indispensable for controlling an etching rate, for example. Temperature control affects the uniformity of a plasma process performed on the workpiece and is therefore an important aspect of the plasma process.
- An electrostatic chuck (ESC) that electrostatically attracts the workpiece by applying a voltage to a chuck electrode is arranged on the mounting table. In recent years, heater embedded electrostatic chuck mechanisms have been proposed that have heaters embedded within the electrostatic chuck such that the surface temperature of the electrostatic chuck may be rapidly changed through heat generation by the heaters. For example,
Patent Document 1 discloses a temperature control technique implemented by a heater embedded electrostatic chuck mechanism. According toPatent Document 1, heaters arranged in the heater embedded electrostatic chuck mechanism are divided into two zones including a circular center zone and an edge zone that is concentrically arranged around the outer periphery of the center zone, and temperature control is implemented with respect to each of these zones. - However, in the above temperature control method that divides heaters into two zones, the heater area of one zone is still relatively large such that unevenness may be created in the temperature distribution within the same zone even when temperature control is implemented with respect to each zone. As a result, uniformity in the etching rate and the etching shape may not be achieved. Etching characteristics are particularly degraded at a boundary portion between the center zone and the edge zone.
- In light of the above, one aspect of the present invention relates to providing a plasma processing apparatus and a heater temperature control method that are capable of dividing a heater arranged within or near an electrostatic chuck into at least four zones and implementing temperature control with respect to each of these zones.
- According to one embodiment of the present invention, a plasma processing apparatus is provided that is configured to convert a gas into plasma using a high frequency power and perform a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and is configured to hold the workpiece, an electrostatic chuck that is arranged on the mounting table and is configured to electrostatically attract the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a plurality of zones including a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit is configured to adjust a control temperature of the heater with respect to each of the plurality of zones.
- According to another embodiment of the present invention, a heater temperature control method is provided for controlling a temperature of a heater arranged in a plasma processing apparatus, which is configured to convert a gas into plasma using a high frequency power and perform a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and is configured to hold the workpiece, an electrostatic chuck that is arranged on the mounting table and is configured to electrostatically attract the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a storage unit. The heater is divided into a plurality of zones including a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The storage unit stores in advance a correlation between a setting temperature of each of the zones and a current value to be applied to the heater to control the heater to a control temperature of each of the zones, the control temperature being obtained by correcting a deviation of a surface temperature of the electrostatic chuck with respect to the setting temperature of each of the zones and correcting a temperature interference from an adjacent zone with respect to the setting temperature of each of the zones. The heater temperature control method includes the steps of acquiring a temperature detected by a temperature sensor arranged in at least one zone of the plurality of zones and setting up the acquired temperature as a setting temperature of the at least one zone, calculating a current value to be applied to the heater of each of the zones based on the acquired setting temperature of the at least one zone and the correlation stored in the storage unit, and controlling the temperature of the heater of each of the zones by applying the calculated current value to the heater of each of the zones.
- According to an aspect of the present invention, a heater arranged within or near an electrostatic chuck may be divided into at least four zones and temperature control may be implemented with respect to each of these zones.
-
FIG. 1 illustrates an overall configuration of a plasma processing apparatus according to an embodiment of the present invention; -
FIG. 2 is an enlarged view of a heater embedded electrostatic chuck mechanism ofFIG. 1 including a heater arranged near an electrostatic chuck; -
FIG. 3 is an enlarged view of a heater embedded electrostatic chuck mechanism including a heater arranged within an electrostatic chuck according to a first modified embodiment; -
FIG. 4 is an enlarged view of a heater embedded electrostatic chuck mechanism including a heater arranged near an electrostatic chuck according to a second modified embodiment; -
FIG. 5 illustrates exemplary process steps that may be performed by the plasma processing apparatus according to an embodiment of the present invention; -
FIG. 6 illustrates process results of implementing temperature control when a heater is divided into two zones; -
FIG. 7 illustrates process results of implementing temperature control when the heater is divided into two zones and when the heater is divided into four zones; -
FIG. 8 illustrates process results of implementing temperature control when the heater is divided into two zones and when the heater is divided into four zones; -
FIG. 9 illustrates an exemplary arrangement of the areas of the zones and power switching at the zones of the heater according to an embodiment of the present invention; -
FIG. 10 illustrates another exemplary arrangement of the areas of the zones and power switching at the zones of the heater according to an embodiment of the present invention; -
FIG. 11 illustrates an arrangement of the zones of the heater and a temperature sensor according to an embodiment of the present invention; -
FIG. 12 illustrates another arrangement of the zones of the heater and temperature sensors according to an embodiment of the present invention; -
FIG. 13 illustrates a functional configuration of a control device according to an embodiment of the present invention; -
FIG. 14 illustrates a method of calculating correction values α1 and β1 with respect to a heater setting temperature Y1 according to an embodiment of the present invention; -
FIG. 15 illustrates a method of calculating correction values α2 and β2 with respect to a heater setting temperature Y2 according to an embodiment of the present invention; -
FIG. 16 illustrates a method of calculating correction values α3 and β3 with respect to a heater setting temperature Y3 according to an embodiment of the present invention;FIG. 17 illustrates a method of calculating correction values α4 and β4 with respect to a heater setting temperature Y4 according to an embodiment of the present invention; -
FIG. 18 illustrates corrections implemented with respect to the setting temperatures of the zones and corresponding input current values to be applied to the zones; and -
FIG. 19 is a flowchart illustrating process steps of a temperature control process according to an embodiment of the present invention. - In the following, embodiments of the present invention are described with reference to the accompanying drawings. Note that elements having substantially the same functions or features may be given the same reference numerals and overlapping descriptions thereof may be omitted.
- [Overall Configuration of Plasma Processing Apparatus]
- First, an overall configuration of a plasma processing apparatus according to an embodiment of the present invention is described with reference to
FIG. 1 . Theplasma processing apparatus 1 illustrated inFIG. 1 is configured as a dual frequency capacitively coupled plasma etching apparatus. Theplasma processing apparatus 1 includes a cylindrical vacuum chamber (processing chamber) 10 (simply referred to as “chamber” hereinafter) made of aluminum having an alumite-treated (anodized) surface, for example. Thechamber 10 may be grounded, for example. - A mounting table 12 configured to hold a semiconductor wafer W (hereinafter, simply referred to as a “wafer W”) thereon as a workpiece is arranged within the
chamber 10. The mounting table 12 may be made of aluminum, for example, and is supported on acylindrical support 16 via an insulatingcylindrical holder 14. Thecylindrical support 16 extends vertically upward from a bottom of thechamber 10. To improve in-plane etching uniformity, afocus ring 18 that may be made of silicon, for example, is arranged on a top surface of the mounting table 12 to surround the outer edge of anelectrostatic chuck 40. - An
exhaust path 20 is formed between a sidewall of thechamber 10 and thecylindrical support 16. A ring-shaped baffle plate 22 is arranged in theexhaust path 20. Anexhaust port 24 is formed at a bottom portion of theexhaust path 20 and is connected to anexhaust device 28 via anexhaust pipe 26. Theexhaust device 28 includes a vacuum pump (not shown) and is configured to depressurize a processing space within thechamber 10 to a predetermined vacuum level. Agate valve 30 configured to open/close an entry/exit port for the wafer W is provided at the sidewall of thechamber 10. - A first high
frequency power supply 31 for drawing ions and a second highfrequency power supply 32 for plasma generation are electrically connected to the mounting table 12 via a matchingunit 33 and amatching unit 34, respectively. The first highfrequency power supply 31 may be configured to apply to the mounting table 12 a first high frequency power of a relatively low frequency (e.g. 0.8 MHz) that is suitable for drawing ions from within the plasma onto the wafer W placed on the mounting table 12. The second highfrequency power supply 32 may be configured to apply to the mounting table 12 a second high frequency power of a higher frequency (e.g. 60 MHz) that is suitable for generating a plasma within thechamber 10. In this way, the mounting table 12 also acts as a lower electrode. Further, ashower head 38, which is described below, is provided at a ceiling portion of thechamber 10. Theshower head 38 acts as an upper electrode at a ground potential. In this way, the second high frequency power from the second highfrequency power supply 32 is capacitively applied between the mounting table 12 and theshower head 38. - The
electrostatic chuck 40 configured to hold the wafer W by an electrostatic attractive force is provided on the top surface of the mounting table 12. Theelectrostatic chuck 40 includes anelectrode 40 a that is made of a conductive film and is arranged between a pair of insulatinglayers 40 b (seeFIGS. 2-4 ) or insulating sheets. ADC voltage supply 42 is electrically connected to theelectrode 40 a via aswitch 43. Theelectrostatic chuck 40 electrostatically attracts and holds the wafer W by a Coulomb force that is generated when a voltage is applied thereto from theDC voltage supply 42. - A heat transfer
gas supply source 52 is configured to supply a heat transfer gas such as He gas between the backside surface of the wafer W and the top surface of theelectrostatic chuck 40 through agas supply line 54. - The
shower head 38 disposed at the ceiling portion of thechamber 10 includes anelectrode plate 56 havingmultiple gas holes 56 a and anelectrode supporting body 58 configured to detachably hold theelectrode plate 56. Agas supply source 62 supplies gas to theshower head 38 via agas supply pipe 64, which is connected to agas inlet 60 a. In this way, the gas may be introduced into thechamber 10 from themultiple gas holes 56 a. - A
magnet 66 is arranged to extend annularly or concentrically around thechamber 10 so that the plasma generated within a plasma generation space of thechamber 10 may be controlled by the magnetic force of themagnet 66. - A
coolant path 70 is formed within the mounting table 12. A coolant cooled to a predetermined temperature is supplied to thecoolant path 70 from achiller unit 71 viapipes heater 75 that is divided into four zones is attached to the backside surface of theelectrostatic chuck 40. Note that the configuration of theheater 75 is described in detail below. A desired AC voltage is applied to theheater 75 from anAC power supply 44. In this way, the temperature of the wafer W may be adjusted to a desired temperature through cooling by thechiller unit 71 and heating by theheater 75. Note that such temperature control may be performed based on a command from acontrol device 80. - The
control device 80 is configured to control the individual components of theplasma processing apparatus 1 such as theexhaust device 28, theAC power supply 44, theDC voltage supply 42, theswitch 43 for the electrostatic chuck, the first highfrequency power supply 31, the second highfrequency power supply 32, the matchingunits gas supply source 52, thegas supply source 62, and thechiller unit 71. Thecontrol device 80 also acquires a sensor temperature detected by atemperature sensor 77 attached to the backside surface of theheater 75. Note that thecontrol device 80 may be connected to a host computer (not shown). - The
control device 80 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), which are not shown. The CPU executes a plasma process according to various recipes stored in astorage unit 83 illustrated inFIG. 13 , for example. Thestorage unit 83 storing the recipes may be configured as a RAM or a ROM using a semiconductor memory, a magnetic disk, or an optical disk, for example. The recipes may be stored in a storage medium and loaded in thestorage unit 83 via a driver, for example. Alternatively, the recipes may be downloaded from a network (not shown) and stored in thestorage unit 83, for example. Also, note that a DSP (digital signal processor) may be used instead of the CPU to perform the above functions. The functions of thecontrol device 80 may be implemented by software, hardware, or a combination thereof. - When performing an etching process using the
plasma processing apparatus 1 having the above-described configuration, first, thegate valve 30 is opened, and a wafer W that is held by a transfer arm is loaded into thechamber 10. Then, the wafer W is lifted from the transfer arm by pusher pins (not shown), and the wafer W is placed on theelectrostatic chuck 40 when the pusher pins are lowered. After the wafer W is loaded, thegate valve 30 is closed. Then, an etching gas is introduced into thechamber 10 from thegas supply source 62 at a predetermined flow rate and flow rate ratio, and the internal pressure of thechamber 10 is reduced to a predetermined pressure by theexhaust device 28. Further, high frequency powers at predetermined power levels are supplied to the mounting table 12 from the first highfrequency power supply 31 and the second highfrequency power supply 32. Also, a voltage from theDC voltage supply 42 is applied to theelectrode 40 a of theelectrostatic chuck 40 so that the wafer W may be fixed to theelectrostatic chuck 40. A heat transfer gas from the heat transfergas supply source 52 is supplied between the top surface of theelectrostatic chuck 40 and the backside surface of the wafer W. Etching gas sprayed into thechamber 10 from theshower head 38 is excited into a plasma by the first high frequency power from the first highfrequency power supply 32. In this way, the plasma is generated within the plasma generation space between the upper electrode (shower head 38) and the lower electrode (mounting table 12), and a main surface of the wafer W is etched by ions and radicals included in the generated plasma. Also, the ions in the plasma may be drawn toward the wafer W by the first high frequency power from the first highfrequency power supply 31. - After plasma etching is completed, the wafer W is lifted and held by the pusher pins, the
gate valve 30 is opened, and the transfer arm is introduced into thechamber 10. Then, the pusher pins are lowered so that the wafer W may be held by the transfer arm. Then, the transfer arm exits thechamber 10, and a next wafer W is loaded into thechamber 10 by the transfer arm. By repeating the above-described procedures, wafers W may be successively processed. - (Heater Configuration)
- In the following, the configuration of the
heater 75 is described in detail with reference toFIG. 2 .FIG. 2 is an enlarged view of the mounting table 12 and theelectrostatic chuck 40 illustrated inFIG. 1 . InFIG. 2 , theheater 75 is attached to the backside surface of theelectrostatic chuck 40. However, in other embodiments, theheater 75 may be arranged within or near theelectrostatic chuck 40. For example, inFIG. 3 , theheater 75 is embedded within the insulatinglayer 40 b of theelectrostatic chuck 40. - The
heater 75 is divided into a circular center zone A, two middle zones (inner middle zone B and outer middle zone C) arranged concentrically around the outer periphery side of the center zone A, and an edge zone D arranged concentrically around the outermost periphery (seeFIGS. 11 and 12 ). Note that although the middle zones are divided into two zones in the present embodiment, the middle zones may also be divided into three or more zones, for example. Particularly, in a case where the diameter of the wafer W is greater than or equal to 450 mm, the middle zones of theheater 75 are preferably divided into at least three zones in order to achieve higher temperature controllability at the middle zones. - The
electrostatic chuck 40 and the mounting table 12 may be attached to one another by an adhesive, for example. In this way, theheater 75 attached to theelectrostatic chuck 40 may be embedded within anadhesive layer 74 and fixed between theelectrostatic chuck 40 and the mounting table 12. In the case where theheater 75 is attached to the backside surface of theelectrostatic chuck 40 as illustrated inFIG. 2 , the arrangement of the heater 75 (heater pattern) may be freely altered until right before theelectrostatic chuck 40 and the mounting table 12 are bound together by theadhesive layer 74. Also, even after theelectrostatic chuck 40 and the mounting table 12 are bound together by theadhesive layer 74, the heater pattern may still be altered by detaching theelectrostatic chuck 40 and the mounting table 12, altering the heater pattern as desired, reapplying an adhesive on theheater 75, and reattaching theelectrostatic chuck 40 and the mounting table 12 together. - On the other hand, in the case where the
heater 75 is embedded within theelectrostatic chuck 40, theheater 75 is fixed within the insulatinglayer 40 b when the insulatinglayer 40 b is sintered. In this case, the heater pattern may not be altered after theheater 75 is embedded within the insulatinglayer 40 b. Thus, in a case where theheater 75 is divided into four or more zones such that the heater pattern becomes rather complicated as in the present embodiment, a heater configuration enabling easy rearrangement of the heater pattern such as that illustrated inFIG. 2 is preferably used rather than the heater configuration having theheater 75 embedded within theelectrostatic chuck 40 as illustrated inFIG. 3 . - Also, in the case where the
heater 75 is attached to the backside surface of theelectrostatic chuck 40 as illustrated inFIG. 2 , theheater 75 is embedded in theadhesive layer 74. Note that when theheater 75 is embedded in the insulatinglayer 40 b as illustrated inFIG. 3 , theheater 75 may not be arranged near the edge portions of theelectrostatic chuck 40 because thin ceramic portions of the insulatinglayer 40 b may break when the insulatinglayer 40 b is sintered. However, such constraints are not imposed on theheater 75 that is embedded in theadhesive layer 74 as illustrated inFIG. 2 . Thus, theheater 75 may be arranged to extend near the edge portions of theelectrostatic chuck 40 inFIG. 2 . As a result, the temperature of theelectrostatic chuck 40 may be uniformly controlled up to its outermost edge portions in the heater configuration ofFIG. 2 where theheater 75 is attached to the backside surface of theelectrostatic chuck 40. - Note that in some embodiments, the
coolant path 70 arranged opposite theheater 75 may be arranged into a pattern corresponding to the zones of theheater 75 as illustrated inFIG. 4 , for example. In this way, temperature controllability and responsiveness may be improved by the cooling by the coolant flowing in thecoolant path 70 arranged according to the zones of theheater 75 and heating by theheater 75. - (Plasma Process)
- The configurations of the
plasma apparatus 1 and theheater 75 according to the present embodiment have been described above. In the following, an exemplary plasma process that may be implemented by theplasma processing apparatus 1 according to the present embodiment are described with reference toFIG. 5 . -
FIG. 5 illustrates exemplary process steps of the plasma process that may be implemented by theplasma processing apparatus 1 of the present embodiment. Note that in the following description of the process steps, setting temperatures of a heater divided into two zones (center/edge) corresponding to a comparison example are indicated as exemplary heater temperature control conditions corresponding to one of the process conditions of the plasma process. - In S1 of
FIG. 5 , a silicon oxide (SiO2)film 108 having a silicon nitride (SiN)film 106, an amorphous silicon (α-Si)film 104, an anti-reflection (BARC: bottom anti-reflective coating)film 102, and aphotoresist film 100 stacked thereon in this order is illustrated. Thesilicon oxide film 108 corresponds to an interlayer insulating film formed by CVD (chemical vapor deposition) using TEOS (tetraethoxysilane). - The BARC (anti-reflection)
film 102 may be formed on the amorphous silicon (α-Si)film 104 by a coating process, for example. TheBARC film 102 is made of a polymer resin containing a pigment that absorbs light having a specific wavelength such as ArF excimer laser light that is irradiated toward thephotoresist film 100, for example. TheBARC film 102 prevents the ArF excimer laser light that has passed through thephotoresist film 100 from being reflected back to thephotoresist film 100 by theamorphous silicon film 104. Thephotoresist film 100 may be formed on theBARC film 102 using a spin coater (not shown), for example. Thephotoresist film 100 has a pattern (resist pattern) formed thereon including openings arranged at positions where predetermined holes are to be formed. - Referring to S2 of
FIG. 5 , first, theBARC film 102 is etched using thephotoresist film 100 as a mask. In this way, the openings of the resist pattern are transferred to theBARC film 102. As process conditions for this process step, a pressure of 5 (mTorr) is prescribed, the second high frequency power/first high frequency power are prescribed to be 200/50 (W), a gas containing CF4/O2 is prescribed, and setting temperatures of the heater are prescribed to be center/edge=60/50° C. - Next, referring to S3 of
FIG. 5 , theamorphous silicon film 104 is etched using thephotoresist film 100 and theBARC film 102 as masks. In this way, the pattern of theBARC film 102 may be transferred to theamorphous silicon film 104. As process conditions for this process step, a pressure of 25 (mTorr) is prescribed, the second high frequency power/first high frequency power are prescribed to be 200/100 (W), a gas containing HBr is prescribed, and setting temperatures of the heater are prescribed to be center/edge=50/40° C. - Next, referring to S4 of
FIG. 5 , O2 ashing is performed and thephotoresist film 100 and theBARC film 102 are removed. As process conditions for this process step, a pressure of 50 (mTorr) is prescribed, the second high frequency power/first high frequency power are prescribed to be 750/0 (W), a gas containing O2 is prescribed, and setting temperatures of the heater are prescribed to be center/edge=50/40° C. - Next, referring to S5 of
FIG. 5 , thesilicon nitride film 106 is etched using theamorphous silicon film 104 as a mask (main etching). In this way, the pattern of theamorphous silicon film 104 may be transferred to thesilicon nitride film 106. As process conditions for this process step, a pressure of 20 (mTorr) is prescribed, the second high frequency power/first high frequency power are prescribed to be 400/300 (W), a gas containing CH2F2/CH3F/O2 is prescribed, and setting temperatures of the heater are prescribed to be center/edge=35/35° C. - Next, referring to S6 of
FIG. 5 , thesilicon oxide film 108 is etched using theamorphous silicon film 104 and thesilicon nitride film 106 as masks (over etching). Note that a portion of thesilicon nitride film 106 remains on thesilicon oxide film 108 when this process step is performed. As process conditions for this process step, a pressure of 20 (mTorr) is prescribed, the second high frequency power/first high frequency power are prescribed to be 400/300 (W), a gas containing CH2F2/CH3F/O2 is prescribed, and setting temperatures of the heater are prescribed to be center/edge=35/35° C. - Lastly, referring to S7 of
FIG. 5 , thesilicon nitride film 106 is completely removed (breakthrough etching). As process conditions for this process step, a pressure of 10 (mTorr) is prescribed, the second high frequency power/first high frequency power are prescribed to be 200/150 (W), a gas containing Cl2 is prescribed, and setting temperatures of the heater are prescribed to be center/edge=35/35° C. Also, O2 ashing is performed after the breakthrough etching step. In this way, deposited matter may be removed. As process conditions for this process step, a pressure of 50 (mTorr) is prescribed, the second high frequency power/first high frequency power are prescribed to be 750/0 (W), a gas containing O2 is prescribed, and setting temperatures of the heater are prescribed to be center/edge=35/35° C. - By performing the above process steps, the resist pattern may be successively transferred to a lower layer film, and holes having a predetermined opening width may ultimately be formed in the
silicon oxide film 108. - (CD Measurement Results: Two Zones)
-
FIG. 6 illustrates deviations in the diameters (hereinafter referred to as “CD”, which stands for critical dimension) of holes formed on the wafer W by the above process steps.FIG. 6 illustrates the deviations in the CD measurements of the holes in a radial direction from the wafer center side to the wafer periphery side. The CD measurements were made at four different measurement points arranged 90 degrees apart from each other along a circumferential direction, and such CD measurements were made with respect to multiple wafer positions along the radial direction from the wafer center side to the wafer periphery side.FIG. 6 represents the result of superposing the above measurement points along a single axis. - The horizontal axis of
FIG. 6 represents a radial position of the wafer with respect to the wafer center, and the vertical axis ofFIG. 6 represents the CD of the holes formed at various positions. The graph on the left side ofFIG. 6 represents CD measurements of the holes formed on theamorphous silicon film 104 after the etching step for etching theamorphous silicon film 104 illustrated by S3 ofFIG. 5 has been performed. The graph on the right side ofFIG. 6 represents CD measurements of the holes formed on thesilicon oxide film 108 after all the process steps up to S7 ofFIG. 5 have been performed. Note that inFIG. 6 , theheater 75 is divided into a center zone and an edge zone at a position approximately 130 (mm) from the wafer center. - As can be appreciated from the left side graph of
FIG. 6 , even at the stage of etching theamorphous silicon film 104, variations in the CD of the holes in the radial direction already occur at a maximum variation range of approximately 5 (nm). Such CD variations may be attributed to deviations in the etching rate resulting from a failure to achieve temperature control uniformity across the radial direction from the wafer center to the wafer periphery. - As can be appreciated from the right side graph of
FIG. 6 , the deviations in the CD of the holes become even wider after all the process steps ofFIG. 5 are performed. Particularly, it can be appreciated that the CD of the holes become larger near the wafer center (widening near wafer center) and the CD of the holes become smaller near the wafer edge (narrowing near wafer edge) owing to an inadequacy in the implementation of temperature control. The anomaly (irregularity) in the CD around the wafer center may be attributed to plasma, particularly radicals, existing at a higher density above the wafer center region. The anomaly (irregularity) in the CD around the wafer edge may be attributed to a tendency for heat to be trapped within the wafer edge region and prevented from escaping outside. - Based on the above results, in the present embodiment, a region around the wafer center and a region around the wafer edge where uniform temperature control is particularly difficult are handled as anomalies, and the
heater 75 is divided into a plurality of zones such that temperature control may be separately implemented on a center zone A and an edge zone D. Further, it can be appreciated from the process results illustrated inFIG. 6 that the CD becomes gradually greater toward the outer periphery side even within a middle region between the center zone A and the edge zone D. Thus, in-plane uniformity of the wafer temperature may not be achieved if this middle region is handled as one single zone. Accordingly, in the present embodiment, the middle region is divided into two middle zones (i.e., inner middle zone B and outer middle zone C). That is, in the present embodiment, theheater 75 is divided into four zones. Note, however, that the present invention is not limited to the above embodiment, and the middle region of theheater 75 may be divided into three or more zones such that theheater 75 may be divided into a total of five or more zones. - (Setting Temperatures of Zones)
- In the following, setting temperatures of the zones are described with reference to
FIG. 7 . The top graph ofFIG. 7 represents measurement results of the wafer temperature in relation to the heater setting temperature to illustrate in-plane uniformity of the wafer temperature in exemplary cases where temperature control is implemented on theheater 75 that is divided into two zones. That is, the top graph ofFIG. 7 represents average values of the wafer temperature in cases where the center zone of the two zones is controlled to a setting temperature of 60° C., and the edge zone of the two zones is controlled to a setting temperature of 40° C., 50° C., 60° C., and 70° C. while plasma processes are performed according to the process steps illustrated inFIG. 5 . An increase in the wafer temperature with respect to the setting temperature may be attributed to heat input from plasma. As can be appreciated, in-plane uniformity of the wafer temperature cannot be achieved in any of the above cases. Notably, because the temperature of the middle zone cannot be controlled in the above cases, substantial deviations occur at the outer periphery side of the center zone and the edge zone. Also, in the above cases, the wafer temperature at the wafer edge side increases as the heater setting temperature increases owing to a tendency for heat to be trapped within the wafer edge region and prevented from escaping outside. - In view of the above results, the lower graph of
FIG. 7 indicates a curved line S1 representing an estimated relationship between the heater setting temperature and the in-plane uniformity of the wafer temperature in a case where temperature control is implemented on theheater 75 that is divided into four zones. Note that the diamond-shaped dots plotted in the lower graph ofFIG. 7 represent CDs of holes formed in a case where theheater 75 is divided into two zones and the center zone and the edge zone are controlled to setting temperatures of 60° C. and 40° C., respectively. The square-shaped dots plotted in the lower graph ofFIG. 7 represent CDs of holes formed in a case where theheater 75 is divided into two zones and the center zone and the edge zone are controlled to setting temperatures of 60° C. and 50° C., respectively. In these cases, the CDs at the wafer edge tend to become smaller as the heater setting temperature for the edge zone increases. Further, the CDs at the wafer center side tend to become smaller as the heater setting temperature for the center zone increases. In view of the above, the lower graph ofFIG. 7 indicates a curved line S2 representing an estimated relationship between the heater setting temperature and the in-plane uniformity of the wafer temperature in a case where the center zone and the edge zone of theheater 75 that is divided into two zones are controlled to setting temperatures of 60° C. and 60° C., respectively. - In a case where the
heater 75 is divided into four zones, and the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D are controlled to setting temperatures of 70° C., 60° C., 70° C., and 50° C., respectively, for example, improved in-plane uniformity of the wafer temperature may be achieved as illustrated by the curved line S1. That is, in the above case, the setting temperatures for the center zone A and the outer middle zone C are set at a higher temperature of 70° C. compared to the settingtemperature 60° C. for the inner middle zone B. In this way, a decrease in CD deviations and improved in-plane uniformity of the wafer temperature may be expected. - (CD Measurement Results: 4 Zones)
- Based on the correlation between the setting temperatures and the CDs as described above, calculations were made to obtain optimal setting temperatures for the four zones of the
heater 75 upon performing the process steps illustrated inFIG. 5 , the optimal setting temperatures were prescribed in a recipe, and the process steps ofFIG. 5 were performed according to the recipe. The right side graph ofFIG. 8 represents process results obtained from performing the process steps according to the recipe. The left side graph ofFIG. 8 illustrates the process results in the case where theheater 75 is divided into two zones as a comparison example. As can be appreciated by comparing the left side and right side graphs ofFIG. 8 , in the case where temperature control is implemented with respect to theheater 75 that is divided into four zones, the “widening near wafer center” and the “narrowing near wafer edge” of the CD that occur when theheater 75 is divided into two zones cannot be observed thereby indicating that in-plane uniformity of the wafer temperature can be achieved. Note that the setting temperatures of the center zone/edge zone during the etching process step for etching theBARC film 102 in the case of implementing the 2-zone temperature control were prescribed to be 60/50° C., and the setting temperatures of the center zone/edge zone during the etching process step for etching thesilicon nitride film 106 in the case of implementing the 2-zone temperature control were prescribed to be 35/35° C. Also, the setting temperatures of the center zone/inner middle zone/outer middle zone/edge zone during the etching process step for etching theBARC film 102 in the case of implementing the 4-zone temperature control were prescribed to be 60/45/45/43° C., and the setting temperatures of the center zone/inner middle zone/outer middle zone/edge zone during the etching process step for etching thesilicon nitride film 106 in the case of implementing the 4-zone temperature control were prescribed to be 40/45/50/50° C. - (Zone Area)
- In the following, the areas of the zones are described with reference to
FIGS. 9 and 10 .FIGS. 9 and 10 illustrate exemplary embodiments of theheater 75 that is divided into four zones. InFIG. 9 , the center zone A has the largest area, and the four zones have areas that become gradually smaller from the center zone A toward the edge zone D. That is, the area of the heater zone at the outermost edge is the smallest. In this embodiment, temperature control may be more intricately performed as the temperature control position comes closer toward the outermost periphery, and in this way, temperature uniformity may be improved. - In
FIG. 10 , the center zone A has the largest area, and the areas of the zones become smaller from the center zone A toward the outer middle zone C. However, the area of the outer middle zone C is smaller than the edge zone D. That is, the outer middle zone C, which is second closest to the outermost periphery, has the smallest area. In this embodiment, temperature control may be more intricately performed with respect to the outermost middle zone positioned toward the inner side with respect to the outermost edge zone, and in this way, temperature uniformity may be improved. - (Power Switching)
- In the
heater 75 having the configurations as illustrated inFIGS. 9 and 10 , theAC power supply 44 may be switched on/off at the middle zones (inner middle zone B and/or outer middle zone C). For example, inFIG. 10 , by switching on/off the power of the outer middle zone C having the smallest zone area, temperature interference from the outer middle zone C to its adjacent zones D and B may be prevented. In this way, temperature control may be implemented based on the correlation between the temperatures of the adjacent zones D and B, and temperature controllability of the wafer W may be improved in some cases. Also, by turning off the power of the heater of one or more zones, energy consumption may be reduced. - On the other hand, the
AC power supply 44 may not be switched on/off at the center zone A and the edge zone D. This is because plasma exists at a high density around the wafer center and heat tends to be trapped within the outermost region of the wafer to be prevented from escaping outside as described above. That is, the center zone A and the edge zone D have anomalies in their temperature distributions such that temperature control at these regions is believed to be indispensable. - As described above, in the
plasma processing apparatus 1 including theheater 75 according to an embodiment of the present invention, theheater 75 arranged within or near theelectrostatic chuck 40 is divided into at least four zones. In this way, temperature control may be separately implemented with respect to the center zone A and the outermost edge zone D in which anomalies occur due to plasma conditions and/or the apparatus configuration, for example. Also, by dividing the middle region into at least two zones, temperature control of the heater may be more intricately conducted. As a result, in-plane uniformity of the wafer temperature may be achieved. Note that in the case where the size (diameter) of the wafer is greater than or equal to 450 mm, the area of the middle region becomes relatively large and accurate temperature control of the middle region becomes difficult. Thus, in a preferred embodiment, the middle region may be subdivided into smaller zones according to the size of the wafer upon implementing temperature control. - [Heater Temperature Control Method]
- In the present embodiment, the
heater 75 is divided into four zones. The center zone A and the edge zone D each have one zone arranged adjacent thereto. The middle zones B and C in the middle region each have two zones arranged adjacent thereto. The zones receive temperature interference from their adjacent zones. Notably, the middle zones B and C in the middle region receive temperature interference from both sides. In view of the above, more accurate temperature control may be possible by correcting the temperature interference from the adjacent zones with respect to the setting temperatures of the zones. - Also, note that because the surface of the
electrostatic chuck 40 is positioned above theheater 75, the surface temperature of theelectrostatic chuck 40 may not always be equal to the setting temperatures of the zones. That is, a deviation may occur between the surface temperature of theelectrostatic chuck 40 and the temperature of theheater 75. Thus, more accurate temperature control may be possible by correcting such a deviation. - In the following, a heater temperature control method is described that involves correcting the temperature interference from adjacent zones, correcting the deviation between the temperature of the
heater 75 and the surface temperature of theelectrostatic chuck 40, and using a corrected temperature obtained by performing the above corrections to control the temperature of theheater 75 at each of the zones. - Note that in the following descriptions, as illustrated in
FIG. 18 , first correction values for correcting deviations of the surface temperature of theelectrostatic chuck 40 with respect to the setting temperatures of the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D are represented as α1, α2, α3, and α4, respectively. Also, second correction values for correcting the temperature interferences from zones adjacent to the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D are represented as β1, β2, β3, and β4, respectively. Further, thetemperature sensor 77 is used in setting up the above correction values. As illustrated inFIG. 11 , in the present embodiment, thetemperature sensor 77 is arranged on the backside surface of theheater 75 within the inner middle zone B. However, the position of thetemperature sensor 77 is not limited to the above, and thetemperature sensor 77 may be arranged in other zones as well. Also, the number oftemperature sensors 77 arranged on theheater 75 is not limited to one. In some embodiments, a plurality of temperature sensors may be arranged. In a preferred embodiment, at least three temperature sensors are arranged on a circumference of a circle. For example, inFIG. 12 , fourtemperature sensors - [Functional Configuration of Control Device 80]
- The above heater temperature control method may be executed by the
control device 80. In the following, a functional configuration of thecontrol device 80 is described with reference toFIG. 13 , and operations of thecontrol device 80 are described thereafter with reference toFIG. 19 . -
FIG. 13 illustrates the functional configuration of thecontrol device 80. Thecontrol device 80 includes anacquisition unit 81, astorage unit 83, atemperature setting unit 84, atemperature control unit 85, adetermination unit 86, and a plasmaprocess execution unit 87. - The
acquisition unit 81 continually inputs the temperature of the backside surface of theheater 75 detected by thetemperature sensor 77. In the case where a plurality oftemperature sensors 77 are arranged, theacquisition unit 81 may input the temperatures detected by the plurality oftemperature sensors 77. - The
temperature setting unit 84 calculates the first values α1, α2, α3, and α4 for correcting the deviations of the surface temperature of theelectrostatic chuck 40 with respect to the setting temperatures of the zones, and the second values β1, β2, β3, and β4 for correcting the temperature interferences from adjacent zones with respect to the setting temperatures of the zones, and stores the calculated correction values in thestorage unit 83. Note that methods for calculating the correction values are described in detail below. - The
storage unit 83 stores a correlation between the setting temperatures of the zones and current values to be applied to theheater 75 such that the zones may be controlled to control temperatures that are corrected based on the first values α1, α2, α3, and α4, and the second values β1, β2, β3, and β4. Also, thestorage unit 83 may store process recipes prescribing the steps and conditions of a process. For example, a process recipe stored in thestorage unit 83 may prescribe the steps and the process conditions for executing each step of the process illustrated inFIG. 5 . - The
temperature control unit 85 adjusts the control temperature of theheater 75 with respect to each of the zones. Thetemperature control unit 85 may correct the deviation of the surface temperature of theelectrostatic chuck 40 with respect to the setting temperature of each of the zones upon adjusting the control temperature of theheater 75 with respect to each of the zones. Also, thetemperature control unit 85 may correct the temperature interference from an adjacent zone with respect to the setting temperature of each of the zones upon adjusting the control temperature of theheater 75 with respect to each of the zones. Thetemperature control unit 85 may make one of the above adjustments or both of the above adjustments, for example. In making the above adjustments, thetemperature control unit 85 may adjust the control temperature of theheater 75 with respect to each of the zones based on at least one of the first values α1, α2, α3, and α4, and the second values β1, β2, β3, and β4 stored in thestorage unit 83. In this case, thetemperature control unit 85 may set up the temperature detected by thetemperature sensor 77 arranged in a given zone as a setting temperature of the corresponding zone, and calculate the current value to be applied to each of the zones of theheater 75 based on the correlation between the setting temperatures of the zones and the current values to be applied to the zones stored in thestorage unit 83. - The
determination unit 86 determines that it is time to replace theelectrostatic chuck 40 when at least one of the calculated current values for the heater of each of the zones is less than a threshold value. That is, as theheater 75 is repeatedly used, theheater 75 may be detached from the ceramic portion of theelectrostatic chuck 40 due to thermal expansion, for example. In such case, the detached portion may be retained at a high temperature, and as a result, the current value may decrease. Note that the threshold value may be stored in thestorage unit 83, for example. - The plasma
process execution unit 87 executes a plasma etching process according to a relevant process recipe stored in thestorage unit 83. - [Correction Value Calculation]
- In the following, correction functions for obtaining heater setting temperatures Y1, Y2, Y3, and Y4 are described. Specifically, methods for calculating the first values α1, α2, α3, and α4, and the second values β1, β2, β3, and β4; and obtaining corrected heater control temperatures using the first values α1, α2, α3, and α4, and the second values β1, β2, β3, and β4 are described with reference to
FIGS. 14-18 .FIG. 14 illustrates a method of calculating the correction values α1 and β1 with respect to the heater setting temperature Y1 according to the present embodiment.FIG. 15 illustrates a method of calculating the correction values α2 and β2 with respect to the heater setting temperature Y2 according to the present embodiment,FIG. 16 illustrates a method of calculating the correction values α3 and β3 with respect to the setting temperature Y3 according to the present embodiment, andFIG. 17 illustrates a method of calculating the correction values α4 and β4 with respect to the heater setting temperature Y4 according to the present embodiment.FIG. 18 illustrates corrections implemented with respect to the setting temperatures of the zones and input current values to be applied to the zones. - As described below, by correcting the temperature interferences from adjacent zones and correcting the deviations of the surface temperature of the
electrostatic chuck 40 with respect to the setting temperatures of theheater 75 to obtain corrected heater control temperatures and applying to theheater 75 input current values corresponding to the corrected heater control temperatures of theheater 75, the temperature of theheater 75 may be more accurately controlled. - In the following descriptions, variables X1, X2, X3, and X4 represent target temperatures of the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D; that is, temperatures to which the surface temperatures of the
electrostatic chuck 40 at the above zones should actually be controlled. Variables Y1, Y2, Y3, and Y4 represent setting temperatures of theheater 75 at the center zone A, the inner middle zone B, the outer middle zone C, and the edge zone D. Variables Z1, Z2, and Z3 represent adjacent temperatures as temperature interferences from adjacent zones. Specifically, referring toFIG. 14 , the adjacent temperature interfering with the center zone A is represented by the variable Z1. Referring toFIG. 15 , the adjacent temperatures interfering with the inner middle zone B are represented by the variables Z1 and Z2; referring toFIG. 16 , the adjacent temperatures interfering with the outer middle zone C are represented by the variables Z2 and Z3; and referring toFIG. 17 , the adjacent temperature interfering with the edge zone D is represented by the variable Z3. Note that the variables X1, X2, X3, and X4 representing the target temperatures of the zones (surface temperature of the electrostatic chuck 40) and the variables Z1, Z2, and Z3 representing the adjacent temperatures are measured using infrared (IR) spectroscopy. The variables Y1, Y2, Y3, and Y4 representing setting temperatures of theheater 75 are measured using a fluorescence thermometer. - For example, with respect to the
heater 75 at the center zone A, the relationship between the heater setting temperature Y1 and the target temperature X1 taking into account the influence of the adjacent temperature Z1 may be expressed by the following formula (1): -
Y 1=α1 X 1+β1(Z 1) (1) - The graph in
FIG. 14 represents the linear function expressed by the above formula (1). If the surface temperature of theelectrostatic chuck 40 were actually measured, the slope α1 will remain the same as long as there is no influence from the adjacent temperature Z1. In the present example, it is assumed that β1(Z1) is constant. In a case where thetemperature sensor 77 detects a sensor temperature T1 at the backside surface of the center zone A, the heater setting temperature Y1 may be set equal to the sensor temperature T1 corresponding to an actual measurement value. Thus, the first correction value α1 and the second correction value β1 may be calculated by obtaining actual measurements of the heater setting temperature Y1 (=sensor temperature T1) and the surface temperature X1 of theelectrostatic chuck 40 at two or more different points. - Similarly, with respect to the heater at the inner middle zone B, the relationship between the heater setting temperature Y2 and the target temperature X2 taking into account the influence of the adjacent temperatures Z1 and Z2 may be expressed by the following formula (2):
-
Y 2=α2 X 2+β2(Z 1 ,Z 2) (2) - The graph in
FIG. 15 represents the linear function expressed by the above formula (2). It is assumed in the present example that the adjacent temperatures Z1 and Z2 are fixed values of a certain conceivable combination for implementing temperature control and β1(Z1, Z2) is constant. In a case where thetemperature sensor 77 detects a sensor temperature T2 at the backside surface of the inner middle zone B, the heater setting temperature Y2 may be set equal to the sensor temperature T2 corresponding to an actual measurement value. Thus, the first correction value α2 and the second correction value β2 may be calculated by obtaining actual measurements of the heater setting temperature Y2 (=sensor temperature T2) and the surface temperature X2 of theelectrostatic chuck 40 at two or more different points. - Similarly, the first correction values α3 and α4, and the second correction values β3 and β4 for controlling the temperatures at the outer middle zone C and the edge zone D may be calculated based on the following formulas (3) and (4):
-
Y 3=α3 X 3+β3(Z 2 ,Z 3) (3) -
Y 4=α4 X 4+β4(Z 3) (4) - Note that the linear function expressed by formula (3) is represented by the graph of
FIG. 16 , and the linear function expressed by formula (4) is represented by the graph ofFIG. 17 . Also, it is assumed in the above examples that the heater setting temperature Y3=sensor temperature T3, and the heater setting temperature Y4=sensor temperature T4. - In this way, the
temperature setting unit 84 may calculate in advance all the correction values indicated inFIG. 18 for all conceivable combinations of temperature setting values of the adjacent zones. The calculated first correction values α1, α2, α3, and α4, and the second values β1, β2, β3, and β4 are stored in thestorage unit 83. Also, thestorage unit 83 stores a correlation between the setting temperatures Y1, Y2, Y3, and Y4 of the zones and current values I1, I2, I3, and I4 to be applied to the zones of theheater 75 such that the heater temperatures at the zones may be equal to the control temperatures calculated for the zones based on the first correction values α1, α2, α3, and α4, and the second correction values β1, β2, β3, and β4. - According to the above correction value calculation methods, relative relationships with respect to temperature variations between adjacent zones are determined beforehand, and the temperature of one zone is actually measured and the measured temperature is used as a base temperature to obtain input current values to be applied to the zones of the
heater 75. In this way, correction-implemented temperature control may be performed on the zones of theheater 75. - Note that in the above descriptions, for example, with respect to the
heater 75 at the inner middle zone B, the relationship is approximated using β2(Z1, Z2) as the influence from adjacent zones. However, correction accuracy may be further improved by additionally taking into account influences from other zones that are not directly adjacent to the zone of interest. For example, with respect to theheater 75 at the inner middle zone B, the relationship may be approximated taking into account influences not only from the center zone A and the outer middle zone C but also the edge zone D using β2(Z1, Z2, Z3) (see formula (6) indicated below). In this way, correction accuracy may be further improved. Similarly, correction values may be calculated in advance taking into account influences not only from adjacent zones but other remote zones using formulas (5)-(8) indicated below. -
Y 1=α1 X 1+β1(Z 1 ,Z 2 ,Z 3) (5) -
Y 2=α2 X 2+β2(Z 1 ,Z 2 ,Z 3) (6) -
Y 3=α3 X 3+β3(Z 1 ,Z 2 ,Z 3) (7) -
Y 4=α4 X 4+β4(Z 1 ,Z 2 ,Z 3) (8) - Further, in a case where the power of the outer middle zone C is turned off, temperature interference from the outer middle zone C may be disregarded. Accordingly, the relationship between the setting temperatures of the zones of the
heater 75 and the target temperatures may be expressed by the following formulas (9)-(11): -
Y 1=α1 X 1+β1(Z 1 ,Z 3) (9) -
Y 2=α2 X 2+β2(Z 1 ,Z 3) (10) -
Y 4=α4 X 4+β4(Z 1 ,Z 3) (11) - [Control Device Operations]
- Lastly, operations of the
control device 80; namely, temperature control operations executed by thecontrol device 80 are described below with reference to the flowchart ofFIG. 19 . Note that in the present example, Z represents the adjacent temperature of an adjacent zone. As described above, the first correction values α1-α4 and the second correction values β1-β4 for the zones are calculated in advance and stored in thestorage unit 83. Also, the correlation between the corrected heater setting temperatures Y1-Y4 and the input current values I1-I4 is stored in thestorage unit 83. - When the present process is started, first, the
acquisition unit 81 acquires the sensor temperature T2 detected by thetemperature sensor 77 that is arranged at the inner middle zone B (step S100). Then, thetemperature setting unit 84 uses the sensor temperature T2 as a base temperature, assigns the sensor temperature T2 to the heater setting temperature Y2 of formula (2), assigns a target value to the target temperature X2 of formula (2), and calculates the adjacent temperatures Z of adjacent zones (step S102). -
Y 2=α2 X 2+β2(Z 1 ,Z 2) (2) - Then, using formulas (1), (3), and (4), the
temperature setting unit 84 assigns target values to the target temperatures X1, X3, and X4, and assigns the adjacent temperatures Z of the adjacent zones to calculate the heater setting temperatures Y1, Y3, and Y4 (step S104). -
Y 1=α1 X 1+β1(Z 1) (1) -
Y 3=α3 X 3+β3(Z 2 ,Z 3) (3) -
Y 4=α4 X 4+β4(Z 3) (4) - Then, based on the correlation between the setting temperatures of the zones and the current values I stored in the
storage unit 83, thetemperature control unit 85 calculates the heater input current values I1, I2. I3, and I4 corresponding to the heater setting temperatures Y1, Y2, Y3r and Y4, and applies the heater input current values I1, I2, I3, and I4 to the corresponding zones of theheater 75 to thereby control the heater temperatures at the corresponding zones (step S106). - Then, the
determination unit 86 determines whether any of the heater input current values I1, I2, I3, and I4 is less than a predetermined threshold value. Upon determining that at least one of the heater input current values I1, I2, I3, and I4 is less than the predetermined threshold value, thedetermination unit 86 determines that it is time to replace the electrostatic chuck 40 (step S108) after which the present process is ended. When thedetermination unit 86 determines that none of the heat input current values I1, I2, I3, and I4 is less than the predetermined threshold value, the present process is immediately ended. - [Effects]
- As described above, in the
plasma processing apparatus 1 including theheater 75 according to an embodiment of the present invention, theheater 75 arranged within or near theelectrostatic chuck 40 is divided into at least four zones. In this way, temperature control may be separately implemented with respect to the center zone A and the outermost edge zone D where anomalies are likely to occur due to plasma conditions or the apparatus configuration. Also, more intricate temperature control of theheater 75 may be enabled by dividing the middle region into at least two zones. As a result, in-plane uniformity of the wafer temperature may be achieved. - Also, the zones receive temperature interference from adjacent zones. The middle zones are particularly susceptible to large temperature interferences. Accordingly, in a temperature control method that may be implemented by the
plasma processing apparatus 1 of the present embodiment, correction may be implemented on temperature interferences from adjacent zones with respect to the setting temperatures of the zones. Also, the setting temperatures of the zones may incorporate corrections on deviations in the surface temperature of theelectrostatic chuck 40 arranged above theheater 75. In this way, highly accurate temperature control may be enabled. - Although illustrative embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to these embodiments. That is, numerous variations and modifications will readily occur to those skilled in the art, and the present invention includes all such variations and modifications that may be made without departing from the scope of the present invention.
- For example, although a plasma etching process is described above as an example of a plasma process that may be executed by a plasma processing apparatus, the present invention is not limited to plasma etching, but may also be applied to plasma processing apparatuses that perform plasma chemical vapor deposition (CVD) for forming a thin film on a wafer through CVD, plasma oxidation, plasma nitridization, sputtering, or ashing, for example.
- Also, a plasma processing apparatus according to the present invention is not limited to a capacitively coupled plasma processing apparatus that generates capacitively coupled plasma (CCP) by discharging a high frequency generated between parallel plate electrodes within a chamber. For example, the present invention may also be applied to an inductively coupled plasma processing apparatus that has an antenna arranged on or near a chamber and is configured to generate inductively coupled plasma (ICP) under a high frequency induction field, or a microwave plasma processing apparatus that generates a plasma wave using microwave power.
- Also, the workpiece subject to a plasma process in the present invention is not limited to a semiconductor wafer but may be a large substrate for a flat panel display (FPD), an electroluminescence (EL) element, or a substrate for a solar battery, for example.
- Also, according to an embodiment of the present invention, the heater may be arranged such that the center zone and the at least two middle zones have areas that become smaller toward the outer periphery side, and an outermost middle zone of the at least two middle zones has an area that is smaller than an area of the edge zone arranged at the outer periphery side of the outermost middle zone.
- Also, in another embodiment of the present invention, the heater may be arranged such that the center zone, the at least two middle zones, and the edge zone have areas that become smaller toward the outer periphery side.
- Also, the temperature control unit may turn off the heater of the outermost middle zone and adjust the control temperature of the heater of the zones other than the outermost middle zone.
- Also, the temperature control unit may correct a deviation of a surface temperature of the electrostatic chuck with respect to a setting temperature of each of the zones upon adjusting the control temperature of the heater with respect to each of the zones.
- Also, the temperature control unit may correct a temperature interference from an adjacent zone with respect to a setting temperature of each of the zones upon adjusting the control temperature of the heater with respect to each of the zones.
- Also, a plasma processing apparatus according to an embodiment of the present invention may further include a temperature setting unit configured to set up a first correction value for correcting a deviation of a surface temperature of the electrostatic chuck with respect to the setting temperature of each of the zones and a second correction value for correcting the temperature interference from the adjacent zone with respect to the setting temperature of each of the zones. The temperature control unit may adjust the control temperature of the heater with respect to each of the zones based on the first correction value and the second correction value.
- Also, the temperature setting unit may store in advance in a storage unit a correlation between the setting temperature of each of the zones and a current value to be applied to the heater of each of the zones to control the heater to the control temperature that is calculated with respect to each of the zones based on the first correction value and the second correction value. The temperature control unit may acquire a temperature detected by a temperature sensor arranged in at least one zone of the plurality of zones, set up the acquired temperature as a setting temperature of the at least one zone, and calculate the current value to be applied to the heater of each of the zones based on the setting temperature of the at least one zone and the correlation stored in the storage unit.
- Also, a plasma processing apparatus according to an embodiment of the present invention may further include a determination unit configured to determine that a time for replacement of the electrostatic chuck has been reached when at least one current value of the calculated current value for the heater of each of the zones is less than a predetermined threshold value.
- Also, at least three temperature sensors may be arranged along a circumference of a circle within the at least one zone.
- Also, a plasma processing apparatus according to an embodiment of the present invention may further include a coolant path arranged opposite the heater, which is arranged within or near the mounting table; and a chiller device configured to circulate a coolant within the coolant path.
- Also, the mounting table may hold a workpiece having a diameter greater than or equal to 450 mm, and the middle zones of the heater may be concentrically divided into at least three zones.
- The present application is based on and claims the benefit of priority of Japanese Patent Application No. 2012-005590 filed on Jan. 13, 2012, and U.S. Provisional Application No. 61/587,706 filed on Jan. 18, 2012, the entire contents of which are herein incorporated by reference.
-
- 1 plasma processing apparatus
- 10 chamber
- 12 mounting table (lower electrode)
- 31 first high frequency power supply
- 32 second high frequency power supply
- 38 shower head (upper electrode)
- 40 electrostatic chuck
- 44 AC power supply
- 62 gas supply source
- 70 coolant path
- 71 chiller unit
- 75 heater
- 77 temperature sensor
- 80 control device
- 81 acquisition unit
- 83 storage unit
- 84 temperature setting unit
- 85 temperature control unit
- 86 determination unit
- 87 plasma process execution unit
- 100 photoresist film
- 102 BARC film
- 104 α-Si film
- 106 SiN film
- 108 SiO2 film
- A center zone
- B inner middle zone
- C outer middle zone
- D edge zone
Claims (13)
1. A plasma processing apparatus configured to convert a gas into plasma using a high frequency power and perform a plasma process on a workpiece using an action of the plasma, the plasma processing apparatus comprising:
a processing chamber that can be depressurized;
a mounting table that is arranged within the processing chamber and is configured to hold the workpiece;
an electrostatic chuck that is arranged on the mounting table and is configured to electrostatically attract the workpiece by applying a voltage to a chuck electrode;
a heater arranged within or near the electrostatic chuck, the heater being divided into a plurality of zones including a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery; and
a temperature control unit configured to adjust a control temperature of the heater with respect to each of the plurality of zones.
2. The plasma processing apparatus as claimed in claim 1 , wherein the heater is arranged such that the center zone and the at least two middle zones have areas that become smaller toward the outer periphery side, and an outermost middle zone of the at least two middle zones has an area that is smaller than an area of the edge zone arranged at the outer periphery side of the outermost middle zone.
3. The plasma processing apparatus as claimed in claim 1 , wherein the heater is arranged such that the center zone, the at least two middle zones, and the edge zone have areas that become smaller toward the outer periphery side.
4. The plasma processing apparatus as claimed in claim 2 , wherein the temperature control unit turns off the heater of the outermost middle zone and adjusts the control temperature of the heater of the zones other than the outermost middle zone.
5. The plasma processing apparatus as claimed in claim 1 , wherein the temperature control unit corrects a deviation of a surface temperature of the electrostatic chuck with respect to a setting temperature of each of the zones upon adjusting the control temperature of the heater with respect to each of the zones.
6. The plasma processing apparatus as claimed in claim 1 , wherein the temperature control unit corrects a temperature interference from an adjacent zone with respect to a setting temperature of each of the zones upon adjusting the control temperature of the heater with respect to each of the zones.
7. The plasma processing apparatus as claimed in claim 6 , further comprising:
a temperature setting unit configured to set up a first correction value for correcting a deviation of a surface temperature of the electrostatic chuck with respect to the setting temperature of each of the zones and a second correction value for correcting the temperature interference from the adjacent zone with respect to the setting temperature of each of the zones;
wherein the temperature control unit adjusts the control temperature of the heater with respect to each of the zones based on the first correction value and the second correction value.
8. The plasma processing apparatus as claimed in claim 7 , wherein
the temperature setting unit stores in advance in a storage unit a correlation between the setting temperature of each of the zones and a current value to be applied to the heater of each of the zones to control the heater to the control temperature that is calculated with respect to each of the zones based on the first correction value and the second correction value; and
the temperature control unit acquires a temperature detected by a temperature sensor arranged in at least one zone of the plurality of zones, sets up the acquired temperature as a setting temperature of the at least one zone, and calculates the current value to be applied to the heater of each of the zones based on the setting temperature of the at least one zone and the correlation stored in the storage unit.
9. The plasma processing apparatus as claimed in claim 8 , further comprising:
a determination unit configured to determine that a time for replacement of the electrostatic chuck has been reached when at least one current value of the calculated current value for the heater of each of the zones is less than a predetermined threshold value.
10. The plasma processing apparatus as claimed in claim 8 , wherein at least three temperature sensors are arranged along a circumference of a circle within the at least one zone.
11. The plasma processing apparatus as claimed in claim 1 , further comprising:
a coolant path arranged opposite the heater, which is arranged within or near the mounting table; and
a chiller device configured to circulate a coolant within the coolant path.
12. The plasma processing apparatus as claimed in claim 1 , wherein
the mounting table holds the workpiece that has a diameter greater than or equal to 450 mm; and
the middle zones of the heater are concentrically divided into at least three zones.
13. A heater temperature control method for controlling a temperature of a heater arranged in a plasma processing apparatus, which is configured to convert a gas into plasma using a high frequency power and perform a plasma process on a workpiece using an action of the plasma, wherein
the plasma processing apparatus includes
a processing chamber that can be depressurized;
a mounting table that is arranged within the processing chamber and is configured to hold the workpiece;
an electrostatic chuck that is arranged on the mounting table and is configured to electrostatically attract the workpiece by applying a voltage to a chuck electrode;
a heater arranged within or near the electrostatic chuck, the heater being divided into a plurality of zones including a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery; and
a storage unit that stores in advance a correlation between a setting temperature of each of the zones and a current value to be applied to the heater to control the heater to a control temperature of each of the zones, the control temperature being obtained by correcting a deviation of a surface temperature of the electrostatic chuck with respect to the setting temperature of each of the zones and correcting a temperature interference from an adjacent zone with respect to the setting temperature of each of the zones;
the heater temperature control method comprising the steps of:
acquiring a temperature detected by a temperature sensor arranged in at least one zone of the plurality of zones and setting up the acquired temperature as a setting temperature of the at least one zone;
calculating a current value to be applied to the heater of each of the zones based on the acquired setting temperature of the at least one zone and the correlation stored in the storage unit; and
controlling the temperature of the heater of each of the zones by applying the calculated current value to the heater of each of the zones.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/368,548 US20150132863A1 (en) | 2012-01-13 | 2013-01-09 | Plasma processing apparatus and heater temperature control method |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012005590A JP5973731B2 (en) | 2012-01-13 | 2012-01-13 | Plasma processing apparatus and heater temperature control method |
JP2012-005590 | 2012-01-13 | ||
US201261587706P | 2012-01-18 | 2012-01-18 | |
US14/368,548 US20150132863A1 (en) | 2012-01-13 | 2013-01-09 | Plasma processing apparatus and heater temperature control method |
PCT/JP2013/050195 WO2013105575A1 (en) | 2012-01-13 | 2013-01-09 | Plasma processing apparatus and heater temperature control method |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/050195 A-371-Of-International WO2013105575A1 (en) | 2012-01-13 | 2013-01-09 | Plasma processing apparatus and heater temperature control method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/428,313 Division US10026631B2 (en) | 2012-01-13 | 2017-02-09 | Plasma processing apparatus and heater temperature control method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20150132863A1 true US20150132863A1 (en) | 2015-05-14 |
Family
ID=48781522
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/368,548 Abandoned US20150132863A1 (en) | 2012-01-13 | 2013-01-09 | Plasma processing apparatus and heater temperature control method |
US15/428,313 Active US10026631B2 (en) | 2012-01-13 | 2017-02-09 | Plasma processing apparatus and heater temperature control method |
US16/013,189 Active US10629464B2 (en) | 2012-01-13 | 2018-06-20 | Plasma processing apparatus and heater temperature control method |
US16/818,132 Abandoned US20200219740A1 (en) | 2012-01-13 | 2020-03-13 | Plasma processing apparatus and heater temperature control method |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/428,313 Active US10026631B2 (en) | 2012-01-13 | 2017-02-09 | Plasma processing apparatus and heater temperature control method |
US16/013,189 Active US10629464B2 (en) | 2012-01-13 | 2018-06-20 | Plasma processing apparatus and heater temperature control method |
US16/818,132 Abandoned US20200219740A1 (en) | 2012-01-13 | 2020-03-13 | Plasma processing apparatus and heater temperature control method |
Country Status (5)
Country | Link |
---|---|
US (4) | US20150132863A1 (en) |
JP (1) | JP5973731B2 (en) |
KR (1) | KR102021570B1 (en) |
TW (1) | TWI582819B (en) |
WO (1) | WO2013105575A1 (en) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140335693A1 (en) * | 2013-05-09 | 2014-11-13 | Tokyo Electron Limited | Substrate processing method, program, control apparatus, film forming apparatus, and substrate processing system |
US20160172161A1 (en) * | 2014-12-16 | 2016-06-16 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20160204008A1 (en) * | 2013-08-23 | 2016-07-14 | Aixtron Se | Substrate treatment device |
US20160370795A1 (en) * | 2015-06-22 | 2016-12-22 | Lam Research Corporation | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
US20170363407A1 (en) * | 2016-06-20 | 2017-12-21 | Tokyo Electron Limited | Measuring instrument for measuring electrostatic capacity and method of calibrating transfer position data in processing system by using measuring instrument |
WO2018136608A1 (en) * | 2017-01-20 | 2018-07-26 | Lam Research Corporation | A virtual metrology method for esc temperature estimation using thermal control elements |
CN108335999A (en) * | 2017-01-19 | 2018-07-27 | 东京毅力科创株式会社 | Substrate board treatment, temprature control method and storage medium |
CN108624871A (en) * | 2018-05-11 | 2018-10-09 | 中晟光电设备(上海)股份有限公司 | A kind of temperature control system, film deposition equipment and temprature control method |
US10096506B2 (en) | 2015-06-22 | 2018-10-09 | Lam Research Corporation | Reducing temperature transition in a substrate support |
KR20180131421A (en) * | 2017-05-30 | 2018-12-10 | 도쿄엘렉트론가부시키가이샤 | Plasma processing method |
US10163607B2 (en) * | 2015-06-11 | 2018-12-25 | Tokyo Electron Limited | Temperature control method and plasma processing apparatus |
US10249519B2 (en) | 2016-02-24 | 2019-04-02 | SCREEN Holdings Co., Ltd. | Light-irradiation heat treatment apparatus |
US10381248B2 (en) | 2015-06-22 | 2019-08-13 | Lam Research Corporation | Auto-correction of electrostatic chuck temperature non-uniformity |
EP3561861A1 (en) * | 2018-04-27 | 2019-10-30 | Horiba Stec, Co., Ltd. | Substrate processing apparatus and program for substrate processing apparatus |
US20190346838A1 (en) * | 2016-02-17 | 2019-11-14 | Lam Research Corporation | Common Terminal Heater for Ceramic Pedestals Used in Semiconductor for Fabrication |
US10763142B2 (en) | 2015-06-22 | 2020-09-01 | Lam Research Corporation | System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter |
CN112117178A (en) * | 2019-06-21 | 2020-12-22 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
CN112602177A (en) * | 2018-09-07 | 2021-04-02 | 东京毅力科创株式会社 | Temperature regulating method |
CN113690161A (en) * | 2016-06-24 | 2021-11-23 | 东京毅力科创株式会社 | Substrate processing system |
US11265971B2 (en) * | 2016-01-22 | 2022-03-01 | Applied Materials, Inc. | Sensor system for multi-zone electrostatic chuck |
TWI772356B (en) * | 2017-01-19 | 2022-08-01 | 日商東京威力科創股份有限公司 | Plasma processing device, temperature control method, and temperature control program |
WO2022261289A1 (en) * | 2021-06-09 | 2022-12-15 | Watlow Electric Manufacturing Company | Cold conduit insulation device |
US11646183B2 (en) * | 2020-03-20 | 2023-05-09 | Applied Materials, Inc. | Substrate support assembly with arc resistant coolant conduit |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5973731B2 (en) * | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | Plasma processing apparatus and heater temperature control method |
US9435692B2 (en) * | 2014-02-05 | 2016-09-06 | Lam Research Corporation | Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output |
JP6240532B2 (en) * | 2014-02-27 | 2017-11-29 | 東京エレクトロン株式会社 | Electrostatic chuck temperature control method |
KR101575505B1 (en) | 2014-07-21 | 2015-12-07 | 주식회사 스피드터치 | Apparatus for controlling process temperature |
KR102343226B1 (en) | 2014-09-04 | 2021-12-23 | 삼성전자주식회사 | Spot heater and Device for cleaning wafer using the same |
JP6530220B2 (en) * | 2015-03-30 | 2019-06-12 | 日本特殊陶業株式会社 | Ceramic heater and control method thereof, and electrostatic chuck and control method thereof |
JP6537329B2 (en) * | 2015-04-07 | 2019-07-03 | 東京エレクトロン株式会社 | Temperature control device, temperature control method and program |
US10237916B2 (en) | 2015-09-30 | 2019-03-19 | Tokyo Electron Limited | Systems and methods for ESC temperature control |
JP6618336B2 (en) * | 2015-11-19 | 2019-12-11 | 株式会社Screenホールディングス | Substrate temperature distribution adjustment method |
JP6961025B2 (en) * | 2016-06-24 | 2021-11-05 | 東京エレクトロン株式会社 | Board processing system |
JP7158131B2 (en) * | 2017-05-30 | 2022-10-21 | 東京エレクトロン株式会社 | Stage and plasma processing equipment |
JP7077006B2 (en) * | 2017-12-20 | 2022-05-30 | 日本特殊陶業株式会社 | Holding device |
KR20210022068A (en) * | 2018-07-17 | 2021-03-02 | 에이에스엠엘 네델란즈 비.브이. | Particle beam inspection device |
CN111009454A (en) * | 2018-10-05 | 2020-04-14 | 东京毅力科创株式会社 | Plasma processing apparatus, monitoring method, and recording medium |
JP7249791B2 (en) * | 2019-01-25 | 2023-03-31 | 東京エレクトロン株式会社 | Heater temperature control method, heater and mounting table |
JP7339905B2 (en) * | 2020-03-13 | 2023-09-06 | キオクシア株式会社 | Bonding device and bonding method |
KR102510306B1 (en) * | 2020-04-21 | 2023-03-17 | 주식회사 히타치하이테크 | Plasma processing device and plasma processing method |
US11688615B2 (en) * | 2020-08-19 | 2023-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for heating semiconductor wafers |
JP2022046103A (en) * | 2020-09-10 | 2022-03-23 | 東京エレクトロン株式会社 | Apparatus and method heating substrate |
JP2022111771A (en) * | 2021-01-20 | 2022-08-01 | 東京エレクトロン株式会社 | Plasma processing system and plasma processing method |
CN113110644B (en) * | 2021-04-26 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Temperature control method and temperature control system for electrostatic chuck |
US11485124B1 (en) * | 2021-07-29 | 2022-11-01 | Nikko-Materials Co., Ltd. | Laminating apparatus and laminating method using same |
Citations (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5766363A (en) * | 1995-04-28 | 1998-06-16 | Anelva Corporation | Heater for CVD apparatus |
US5880923A (en) * | 1997-06-09 | 1999-03-09 | Applied Materials Inc. | Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system |
US20020050246A1 (en) * | 2000-06-09 | 2002-05-02 | Applied Materials, Inc. | Full area temperature controlled electrostatic chuck and method of fabricating same |
US6392205B1 (en) * | 1998-11-30 | 2002-05-21 | Komatsu Limited | Disc heater and temperature control apparatus |
US20020196596A1 (en) * | 2001-06-20 | 2002-12-26 | Parkhe Vijay D. | Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same |
US6740853B1 (en) * | 1999-09-29 | 2004-05-25 | Tokyo Electron Limited | Multi-zone resistance heater |
US20040177927A1 (en) * | 2001-07-10 | 2004-09-16 | Akihiro Kikuchi | Plasma procesor and plasma processing method |
US20050022932A1 (en) * | 2001-06-29 | 2005-02-03 | Akira Kagoshima | Disturbance-free, recipe-controlled plasma processing system and method |
US20050090914A1 (en) * | 2001-03-05 | 2005-04-28 | Junichi Tanaka | Process monitoring device for sample processing apparatus and control method of sample processing apparatus |
US6921724B2 (en) * | 2002-04-02 | 2005-07-26 | Lam Research Corporation | Variable temperature processes for tunable electrostatic chuck |
US20060076109A1 (en) * | 2004-10-07 | 2006-04-13 | John Holland | Method and apparatus for controlling temperature of a substrate |
US7071551B2 (en) * | 2000-05-26 | 2006-07-04 | Ibiden Co., Ltd. | Device used to produce or examine semiconductors |
US7110917B2 (en) * | 2003-11-14 | 2006-09-19 | Ricoh Company, Ltd. | Abnormality determining method, and abnormality determining apparatus and image forming apparatus using same |
US20060207725A1 (en) * | 2005-03-18 | 2006-09-21 | Tokyo Electronic Limited | Substrate mounting table, substrate processing apparatus and substrate processing method |
US20060289447A1 (en) * | 2005-06-20 | 2006-12-28 | Mohamed Zakaria A | Heating chuck assembly |
US20080017104A1 (en) * | 2006-07-20 | 2008-01-24 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
US20080066676A1 (en) * | 2006-09-19 | 2008-03-20 | General Electric Company | Heating apparatus with enhanced thermal uniformity and method for making thereof |
US20080170969A1 (en) * | 2007-01-17 | 2008-07-17 | Ken Yoshioka | Plasma processing apparatus |
US7417206B2 (en) * | 2004-10-28 | 2008-08-26 | Kyocera Corporation | Heater, wafer heating apparatus and method for manufacturing heater |
US20080280451A1 (en) * | 2007-05-12 | 2008-11-13 | Yutaka Ohmoto | Plasma processing method and plasma processing apparatus |
US20090095733A1 (en) * | 2006-06-16 | 2009-04-16 | Tokyo Electron Limited | Mounting table structure and heat treatment apparatus |
US20090118872A1 (en) * | 2007-11-02 | 2009-05-07 | Tokyo Electron Limited | Temperature control device for target substrate, temperature control method and plasma processing apparatus including same |
US20090277895A1 (en) * | 2007-01-17 | 2009-11-12 | Tokyo Electron Limited | Mounting table structure, and processing apparatus |
US20090277883A1 (en) * | 2008-05-09 | 2009-11-12 | Hitachi High- Technologies Corporation | Plasma processing apparatus and plasma processing method |
US20090310645A1 (en) * | 2008-06-16 | 2009-12-17 | Hitachi-High Technologies Corporation | Sample temperature control method |
US20100163188A1 (en) * | 2007-08-28 | 2010-07-01 | Tokyo Electron Limited | Mounting table structure and processing apparatus |
US20100218895A1 (en) * | 2006-03-22 | 2010-09-02 | Tokyo Electron Limited | Plasma processing apparatus |
US20100279512A1 (en) * | 2007-11-14 | 2010-11-04 | Tokyo Electron Limited | Plasma processing apparatus and method for plasma-processing semiconductor substrate |
US20100323313A1 (en) * | 2008-03-21 | 2010-12-23 | Tokyo Elecron Limited | Stage structure and heat treatment apparatus |
US20110066294A1 (en) * | 2008-11-10 | 2011-03-17 | Kelk Ltd. | Apparatus and method for controlling temperature of semiconductor wafers |
US20110092072A1 (en) * | 2009-10-21 | 2011-04-21 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
US20110174778A1 (en) * | 2008-07-11 | 2011-07-21 | Tokyo Electron Limited | Plasma processing apparatus and method |
US8071916B2 (en) * | 2004-06-28 | 2011-12-06 | Kyocera Corporation | Wafer heating apparatus and semiconductor manufacturing apparatus |
US8075733B2 (en) * | 2008-08-25 | 2011-12-13 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20110303641A1 (en) * | 2010-06-11 | 2011-12-15 | Applied Materials, Inc. | Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies |
US8092602B2 (en) * | 2002-11-29 | 2012-01-10 | Tokyo Electron Limited | Thermally zoned substrate holder assembly |
US20120012556A1 (en) * | 2008-02-27 | 2012-01-19 | Tokyo Electron Limited | Plasma etching apparatus and plasma etching method |
US20120031889A1 (en) * | 2009-03-24 | 2012-02-09 | Tokyo Electron Limited | Mounting table structure and processing apparatus |
US20120091108A1 (en) * | 2010-10-14 | 2012-04-19 | Applied Materials, Inc. | Methods and apparatus for controlling substrate temperature in a process chamber |
US20120132397A1 (en) * | 2010-06-08 | 2012-05-31 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
US20120227955A1 (en) * | 2011-03-08 | 2012-09-13 | Tokyo Electron Limited | Substrate temperature control method and plasma processing apparatus |
US20120248067A1 (en) * | 2011-03-31 | 2012-10-04 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, and storage medium |
US20130016346A1 (en) * | 2011-07-12 | 2013-01-17 | Kla-Tencor Corporation | Wafer Inspection |
US20130062839A1 (en) * | 2011-09-09 | 2013-03-14 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US8404572B2 (en) * | 2009-02-13 | 2013-03-26 | Taiwan Semiconductor Manufacturing Co., Ltd | Multi-zone temperature control for semiconductor wafer |
US8405005B2 (en) * | 2009-02-04 | 2013-03-26 | Mattson Technology, Inc. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
US20130105084A1 (en) * | 2011-10-27 | 2013-05-02 | Chetan MAHADESWARASWAMY | Component temperature control using a combination of proportional control valves and pulsed valves |
US20130117986A1 (en) * | 2011-11-10 | 2013-05-16 | Lam Research Corporation | Installation fixture for elastomer bands and methods of using the same |
US20130161305A1 (en) * | 2011-08-30 | 2013-06-27 | Watlow Electric Manufacturing Company | High definition heater and method of operation |
US20140097176A1 (en) * | 2012-10-08 | 2014-04-10 | Minco Products, Inc. | Heater assembly |
US20140129045A1 (en) * | 2011-06-28 | 2014-05-08 | Omron Corporation | Control device, heating device control system, control method, program, and recording medium |
US8971009B2 (en) * | 2011-09-30 | 2015-03-03 | Applied Materials, Inc. | Electrostatic chuck with temperature control |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5668524A (en) * | 1994-02-09 | 1997-09-16 | Kyocera Corporation | Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase |
US5796074A (en) * | 1995-11-28 | 1998-08-18 | Applied Materials, Inc. | Wafer heater assembly |
US6423949B1 (en) * | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
WO2001031978A1 (en) * | 1999-10-22 | 2001-05-03 | Ibiden Co., Ltd. | Ceramic heater |
US6884972B2 (en) * | 1999-12-09 | 2005-04-26 | Ibiden Co., Ltd. | Ceramic plate for a semiconductor producing/inspecting apparatus |
US20040149718A1 (en) * | 2000-04-07 | 2004-08-05 | Yasutaka Ito | Ceramic heater |
JP2002076102A (en) * | 2000-08-31 | 2002-03-15 | Ibiden Co Ltd | Ceramic substrate |
EP1341216A1 (en) * | 2000-12-05 | 2003-09-03 | Ibiden Co., Ltd. | Ceramic substrate for semiconductor manufacturing and inspecting devices, and method of manufacturing the ceramic substrate |
US6741446B2 (en) * | 2001-03-30 | 2004-05-25 | Lam Research Corporation | Vacuum plasma processor and method of operating same |
JP3825277B2 (en) * | 2001-05-25 | 2006-09-27 | 東京エレクトロン株式会社 | Heat treatment device |
JP4502168B2 (en) * | 2001-07-06 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | Chemical mechanical polishing apparatus and chemical mechanical polishing method |
TW567177B (en) * | 2001-07-19 | 2003-12-21 | Ibiden Co Ltd | Ceramic connection body, method of connecting the ceramic bodies, and ceramic structural body |
JP3639546B2 (en) * | 2001-07-25 | 2005-04-20 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
US6736720B2 (en) * | 2001-12-26 | 2004-05-18 | Lam Research Corporation | Apparatus and methods for controlling wafer temperature in chemical mechanical polishing |
US7734439B2 (en) * | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
US7778533B2 (en) * | 2002-09-12 | 2010-08-17 | Applied Materials, Inc. | Semiconductor thermal process control |
CN100377773C (en) * | 2003-07-14 | 2008-04-02 | 三菱丽阳株式会社 | Fixed bed multitube reactor |
JP4758716B2 (en) * | 2005-09-16 | 2011-08-31 | 株式会社タムラ製作所 | Control method of heating device |
US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
US7838800B2 (en) | 2006-09-25 | 2010-11-23 | Tokyo Electron Limited | Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system |
US7445446B2 (en) * | 2006-09-29 | 2008-11-04 | Tokyo Electron Limited | Method for in-line monitoring and controlling in heat-treating of resist coated wafers |
JPWO2008053929A1 (en) * | 2006-11-02 | 2010-02-25 | 東京エレクトロン株式会社 | Micro structure inspection apparatus, micro structure inspection method, and substrate holding apparatus |
US20080228308A1 (en) * | 2007-03-13 | 2008-09-18 | Tokyo Electron Limited | Critical dimension uniformity optimization |
JP2008288340A (en) * | 2007-05-16 | 2008-11-27 | Panasonic Corp | Plasma treatment apparatus, plasma treatment method, and cleaning time prediction program |
TWI508129B (en) * | 2007-10-31 | 2015-11-11 | Lam Res Corp | Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body |
US7848840B2 (en) * | 2008-01-04 | 2010-12-07 | Applied Materials, Inc. | Method of controlling process parameters for semiconductor manufacturing apparatus |
CN102160167B (en) * | 2008-08-12 | 2013-12-04 | 应用材料公司 | Electrostatic chuck assembly |
JP5651317B2 (en) * | 2009-03-31 | 2015-01-07 | 東京エレクトロン株式会社 | Semiconductor manufacturing apparatus and temperature control method |
US20100279435A1 (en) * | 2009-04-30 | 2010-11-04 | Applied Materials, Inc. | Temperature control of chemical mechanical polishing |
JP2010278166A (en) * | 2009-05-27 | 2010-12-09 | Tokyo Electron Ltd | Annular component for plasma treatment, and plasma treatment device |
US20110061810A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
JP2011187758A (en) * | 2010-03-10 | 2011-09-22 | Tokyo Electron Ltd | Temperature control system, temperature control method, plasma treatment device, and computer storage medium |
US8435901B2 (en) * | 2010-06-11 | 2013-05-07 | Tokyo Electron Limited | Method of selectively etching an insulation stack for a metal interconnect |
KR101141261B1 (en) * | 2010-08-12 | 2012-05-04 | 한국에너지기술연구원 | Apparatus and method for measuring dynamic thermal conductivity of micro-structured fluid |
JP5552401B2 (en) * | 2010-09-08 | 2014-07-16 | 株式会社荏原製作所 | Polishing apparatus and method |
US8552346B2 (en) * | 2011-05-20 | 2013-10-08 | Applied Materials, Inc. | Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber |
WO2013047531A1 (en) * | 2011-09-27 | 2013-04-04 | 東京エレクトロン株式会社 | Plasma etching method and method for manufacturing semiconductor device |
EP2764408B1 (en) * | 2011-10-06 | 2019-08-21 | ASML Netherlands B.V. | Chuck, lithography apparatus and method of using a chuck |
JP5912439B2 (en) * | 2011-11-15 | 2016-04-27 | 東京エレクトロン株式会社 | Temperature control system, semiconductor manufacturing apparatus, and temperature control method |
JP5973731B2 (en) * | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | Plasma processing apparatus and heater temperature control method |
KR20130098707A (en) * | 2012-02-28 | 2013-09-05 | 삼성전자주식회사 | Electrostatic chuck device and control method thereof |
US9706605B2 (en) * | 2012-03-30 | 2017-07-11 | Applied Materials, Inc. | Substrate support with feedthrough structure |
US9984866B2 (en) * | 2012-06-12 | 2018-05-29 | Component Re-Engineering Company, Inc. | Multiple zone heater |
US10049948B2 (en) * | 2012-11-30 | 2018-08-14 | Lam Research Corporation | Power switching system for ESC with array of thermal control elements |
JP6312451B2 (en) * | 2014-01-29 | 2018-04-18 | 東京エレクトロン株式会社 | Power supply cover structure and semiconductor manufacturing apparatus |
US11158526B2 (en) * | 2014-02-07 | 2021-10-26 | Applied Materials, Inc. | Temperature controlled substrate support assembly |
US9831111B2 (en) * | 2014-02-12 | 2017-11-28 | Applied Materials, Inc. | Apparatus and method for measurement of the thermal performance of an electrostatic wafer chuck |
JP6219227B2 (en) * | 2014-05-12 | 2017-10-25 | 東京エレクトロン株式会社 | Heater feeding mechanism and stage temperature control method |
JP6219229B2 (en) * | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | Heater feeding mechanism |
US10079165B2 (en) * | 2014-05-20 | 2018-09-18 | Applied Materials, Inc. | Electrostatic chuck with independent zone cooling and reduced crosstalk |
JP6530220B2 (en) * | 2015-03-30 | 2019-06-12 | 日本特殊陶業株式会社 | Ceramic heater and control method thereof, and electrostatic chuck and control method thereof |
KR102321919B1 (en) * | 2015-05-22 | 2021-11-03 | 어플라이드 머티어리얼스, 인코포레이티드 | Azimuthally tunable multi-zone electrostatic chuck |
US9812342B2 (en) * | 2015-12-08 | 2017-11-07 | Watlow Electric Manufacturing Company | Reduced wire count heater array block |
US10690414B2 (en) * | 2015-12-11 | 2020-06-23 | Lam Research Corporation | Multi-plane heater for semiconductor substrate support |
JP6688172B2 (en) * | 2016-06-24 | 2020-04-28 | 東京エレクトロン株式会社 | Substrate processing system and method |
JP2019067846A (en) * | 2017-09-29 | 2019-04-25 | 東京エレクトロン株式会社 | Temperature control method |
-
2012
- 2012-01-13 JP JP2012005590A patent/JP5973731B2/en active Active
-
2013
- 2013-01-09 WO PCT/JP2013/050195 patent/WO2013105575A1/en active Application Filing
- 2013-01-09 US US14/368,548 patent/US20150132863A1/en not_active Abandoned
- 2013-01-09 KR KR1020147017920A patent/KR102021570B1/en active IP Right Grant
- 2013-01-11 TW TW102101145A patent/TWI582819B/en active
-
2017
- 2017-02-09 US US15/428,313 patent/US10026631B2/en active Active
-
2018
- 2018-06-20 US US16/013,189 patent/US10629464B2/en active Active
-
2020
- 2020-03-13 US US16/818,132 patent/US20200219740A1/en not_active Abandoned
Patent Citations (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5766363A (en) * | 1995-04-28 | 1998-06-16 | Anelva Corporation | Heater for CVD apparatus |
US5880923A (en) * | 1997-06-09 | 1999-03-09 | Applied Materials Inc. | Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system |
US6392205B1 (en) * | 1998-11-30 | 2002-05-21 | Komatsu Limited | Disc heater and temperature control apparatus |
US6740853B1 (en) * | 1999-09-29 | 2004-05-25 | Tokyo Electron Limited | Multi-zone resistance heater |
US7071551B2 (en) * | 2000-05-26 | 2006-07-04 | Ibiden Co., Ltd. | Device used to produce or examine semiconductors |
US20020050246A1 (en) * | 2000-06-09 | 2002-05-02 | Applied Materials, Inc. | Full area temperature controlled electrostatic chuck and method of fabricating same |
US20050090914A1 (en) * | 2001-03-05 | 2005-04-28 | Junichi Tanaka | Process monitoring device for sample processing apparatus and control method of sample processing apparatus |
US20020196596A1 (en) * | 2001-06-20 | 2002-12-26 | Parkhe Vijay D. | Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same |
US20050022932A1 (en) * | 2001-06-29 | 2005-02-03 | Akira Kagoshima | Disturbance-free, recipe-controlled plasma processing system and method |
US20040177927A1 (en) * | 2001-07-10 | 2004-09-16 | Akihiro Kikuchi | Plasma procesor and plasma processing method |
US8904957B2 (en) * | 2001-07-10 | 2014-12-09 | Tokyo Electron Limited | Plasma processor and plasma processing method |
US6921724B2 (en) * | 2002-04-02 | 2005-07-26 | Lam Research Corporation | Variable temperature processes for tunable electrostatic chuck |
US8092602B2 (en) * | 2002-11-29 | 2012-01-10 | Tokyo Electron Limited | Thermally zoned substrate holder assembly |
US7110917B2 (en) * | 2003-11-14 | 2006-09-19 | Ricoh Company, Ltd. | Abnormality determining method, and abnormality determining apparatus and image forming apparatus using same |
US8071916B2 (en) * | 2004-06-28 | 2011-12-06 | Kyocera Corporation | Wafer heating apparatus and semiconductor manufacturing apparatus |
US20060076109A1 (en) * | 2004-10-07 | 2006-04-13 | John Holland | Method and apparatus for controlling temperature of a substrate |
US7417206B2 (en) * | 2004-10-28 | 2008-08-26 | Kyocera Corporation | Heater, wafer heating apparatus and method for manufacturing heater |
US20060207725A1 (en) * | 2005-03-18 | 2006-09-21 | Tokyo Electronic Limited | Substrate mounting table, substrate processing apparatus and substrate processing method |
US20060289447A1 (en) * | 2005-06-20 | 2006-12-28 | Mohamed Zakaria A | Heating chuck assembly |
US20100218895A1 (en) * | 2006-03-22 | 2010-09-02 | Tokyo Electron Limited | Plasma processing apparatus |
US20090095733A1 (en) * | 2006-06-16 | 2009-04-16 | Tokyo Electron Limited | Mounting table structure and heat treatment apparatus |
US20080017104A1 (en) * | 2006-07-20 | 2008-01-24 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
US20080066676A1 (en) * | 2006-09-19 | 2008-03-20 | General Electric Company | Heating apparatus with enhanced thermal uniformity and method for making thereof |
US20080170969A1 (en) * | 2007-01-17 | 2008-07-17 | Ken Yoshioka | Plasma processing apparatus |
US20090277895A1 (en) * | 2007-01-17 | 2009-11-12 | Tokyo Electron Limited | Mounting table structure, and processing apparatus |
US20080280451A1 (en) * | 2007-05-12 | 2008-11-13 | Yutaka Ohmoto | Plasma processing method and plasma processing apparatus |
US20100163188A1 (en) * | 2007-08-28 | 2010-07-01 | Tokyo Electron Limited | Mounting table structure and processing apparatus |
US20090118872A1 (en) * | 2007-11-02 | 2009-05-07 | Tokyo Electron Limited | Temperature control device for target substrate, temperature control method and plasma processing apparatus including same |
US20100279512A1 (en) * | 2007-11-14 | 2010-11-04 | Tokyo Electron Limited | Plasma processing apparatus and method for plasma-processing semiconductor substrate |
US20120012556A1 (en) * | 2008-02-27 | 2012-01-19 | Tokyo Electron Limited | Plasma etching apparatus and plasma etching method |
US20100323313A1 (en) * | 2008-03-21 | 2010-12-23 | Tokyo Elecron Limited | Stage structure and heat treatment apparatus |
US20090277883A1 (en) * | 2008-05-09 | 2009-11-12 | Hitachi High- Technologies Corporation | Plasma processing apparatus and plasma processing method |
US20090310645A1 (en) * | 2008-06-16 | 2009-12-17 | Hitachi-High Technologies Corporation | Sample temperature control method |
US20110174778A1 (en) * | 2008-07-11 | 2011-07-21 | Tokyo Electron Limited | Plasma processing apparatus and method |
US8075733B2 (en) * | 2008-08-25 | 2011-12-13 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20110066294A1 (en) * | 2008-11-10 | 2011-03-17 | Kelk Ltd. | Apparatus and method for controlling temperature of semiconductor wafers |
US8405005B2 (en) * | 2009-02-04 | 2013-03-26 | Mattson Technology, Inc. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
US8404572B2 (en) * | 2009-02-13 | 2013-03-26 | Taiwan Semiconductor Manufacturing Co., Ltd | Multi-zone temperature control for semiconductor wafer |
US20120031889A1 (en) * | 2009-03-24 | 2012-02-09 | Tokyo Electron Limited | Mounting table structure and processing apparatus |
US20110092072A1 (en) * | 2009-10-21 | 2011-04-21 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
US20120132397A1 (en) * | 2010-06-08 | 2012-05-31 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
US20110303641A1 (en) * | 2010-06-11 | 2011-12-15 | Applied Materials, Inc. | Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies |
US20120091108A1 (en) * | 2010-10-14 | 2012-04-19 | Applied Materials, Inc. | Methods and apparatus for controlling substrate temperature in a process chamber |
US20120227955A1 (en) * | 2011-03-08 | 2012-09-13 | Tokyo Electron Limited | Substrate temperature control method and plasma processing apparatus |
US20120248067A1 (en) * | 2011-03-31 | 2012-10-04 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, and storage medium |
US20140129045A1 (en) * | 2011-06-28 | 2014-05-08 | Omron Corporation | Control device, heating device control system, control method, program, and recording medium |
US20130016346A1 (en) * | 2011-07-12 | 2013-01-17 | Kla-Tencor Corporation | Wafer Inspection |
US20130161305A1 (en) * | 2011-08-30 | 2013-06-27 | Watlow Electric Manufacturing Company | High definition heater and method of operation |
US20130062839A1 (en) * | 2011-09-09 | 2013-03-14 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US8971009B2 (en) * | 2011-09-30 | 2015-03-03 | Applied Materials, Inc. | Electrostatic chuck with temperature control |
US20130105084A1 (en) * | 2011-10-27 | 2013-05-02 | Chetan MAHADESWARASWAMY | Component temperature control using a combination of proportional control valves and pulsed valves |
US20130117986A1 (en) * | 2011-11-10 | 2013-05-16 | Lam Research Corporation | Installation fixture for elastomer bands and methods of using the same |
US20140097176A1 (en) * | 2012-10-08 | 2014-04-10 | Minco Products, Inc. | Heater assembly |
Cited By (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10096499B2 (en) * | 2013-05-09 | 2018-10-09 | Tokyo Electron Limited | Substrate processing method, program, control apparatus, film forming apparatus, and substrate processing system |
US20140335693A1 (en) * | 2013-05-09 | 2014-11-13 | Tokyo Electron Limited | Substrate processing method, program, control apparatus, film forming apparatus, and substrate processing system |
US20160204008A1 (en) * | 2013-08-23 | 2016-07-14 | Aixtron Se | Substrate treatment device |
US10438823B2 (en) * | 2013-08-23 | 2019-10-08 | Aixtron Se | Substrate treatment device |
US20160172161A1 (en) * | 2014-12-16 | 2016-06-16 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US11424108B2 (en) * | 2014-12-16 | 2022-08-23 | Hitachi High-Tech Corporation | Plasma processing apparatus |
TWI707379B (en) * | 2015-06-11 | 2020-10-11 | 日商東京威力科創股份有限公司 | Temperature control method and plasma processing device |
US10163607B2 (en) * | 2015-06-11 | 2018-12-25 | Tokyo Electron Limited | Temperature control method and plasma processing apparatus |
KR20160150588A (en) * | 2015-06-22 | 2016-12-30 | 램 리써치 코포레이션 | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
US11029668B2 (en) | 2015-06-22 | 2021-06-08 | Lam Research Corporation | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
US10096506B2 (en) | 2015-06-22 | 2018-10-09 | Lam Research Corporation | Reducing temperature transition in a substrate support |
TWI709192B (en) * | 2015-06-22 | 2020-11-01 | 美商蘭姆研究公司 | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
KR102573509B1 (en) * | 2015-06-22 | 2023-08-31 | 램 리써치 코포레이션 | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
US10763142B2 (en) | 2015-06-22 | 2020-09-01 | Lam Research Corporation | System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter |
US10381248B2 (en) | 2015-06-22 | 2019-08-13 | Lam Research Corporation | Auto-correction of electrostatic chuck temperature non-uniformity |
US10386821B2 (en) * | 2015-06-22 | 2019-08-20 | Lam Research Corporation | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
US20160370795A1 (en) * | 2015-06-22 | 2016-12-22 | Lam Research Corporation | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
US11265971B2 (en) * | 2016-01-22 | 2022-03-01 | Applied Materials, Inc. | Sensor system for multi-zone electrostatic chuck |
US20190346838A1 (en) * | 2016-02-17 | 2019-11-14 | Lam Research Corporation | Common Terminal Heater for Ceramic Pedestals Used in Semiconductor for Fabrication |
US10249519B2 (en) | 2016-02-24 | 2019-04-02 | SCREEN Holdings Co., Ltd. | Light-irradiation heat treatment apparatus |
US10634479B2 (en) * | 2016-06-20 | 2020-04-28 | Tokyo Electron Limited | Measuring instrument for measuring electrostatic capacity and method of calibrating transfer position data in processing system by using measuring instrument |
US20170363407A1 (en) * | 2016-06-20 | 2017-12-21 | Tokyo Electron Limited | Measuring instrument for measuring electrostatic capacity and method of calibrating transfer position data in processing system by using measuring instrument |
CN113690161A (en) * | 2016-06-24 | 2021-11-23 | 东京毅力科创株式会社 | Substrate processing system |
US11069545B2 (en) * | 2017-01-19 | 2021-07-20 | Tokyo Electron Limited | Substrate processing apparatus, temperature control method, and temperature control program |
TWI772356B (en) * | 2017-01-19 | 2022-08-01 | 日商東京威力科創股份有限公司 | Plasma processing device, temperature control method, and temperature control program |
CN108335999A (en) * | 2017-01-19 | 2018-07-27 | 东京毅力科创株式会社 | Substrate board treatment, temprature control method and storage medium |
CN110199383A (en) * | 2017-01-20 | 2019-09-03 | 朗姆研究公司 | A kind of virtual metrology method carrying out ESC temperature estimation using thermal control element |
US10509425B2 (en) | 2017-01-20 | 2019-12-17 | Lam Research Corporation | Virtual metrology method for ESC temperature estimation using thermal control elements |
TWI782943B (en) * | 2017-01-20 | 2022-11-11 | 美商蘭姆研究公司 | A virtual metrology method for esc temperature estimation using thermal control elements |
WO2018136608A1 (en) * | 2017-01-20 | 2018-07-26 | Lam Research Corporation | A virtual metrology method for esc temperature estimation using thermal control elements |
CN111653466A (en) * | 2017-05-30 | 2020-09-11 | 东京毅力科创株式会社 | Plasma processing method |
KR20180131421A (en) * | 2017-05-30 | 2018-12-10 | 도쿄엘렉트론가부시키가이샤 | Plasma processing method |
KR102505679B1 (en) | 2017-05-30 | 2023-03-02 | 도쿄엘렉트론가부시키가이샤 | Plasma processing method |
US10361089B2 (en) * | 2017-05-30 | 2019-07-23 | Tokyo Electron Limited | Plasma processing method |
EP3561861A1 (en) * | 2018-04-27 | 2019-10-30 | Horiba Stec, Co., Ltd. | Substrate processing apparatus and program for substrate processing apparatus |
CN108624871A (en) * | 2018-05-11 | 2018-10-09 | 中晟光电设备(上海)股份有限公司 | A kind of temperature control system, film deposition equipment and temprature control method |
CN112602177A (en) * | 2018-09-07 | 2021-04-02 | 东京毅力科创株式会社 | Temperature regulating method |
CN112117178A (en) * | 2019-06-21 | 2020-12-22 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
US11646183B2 (en) * | 2020-03-20 | 2023-05-09 | Applied Materials, Inc. | Substrate support assembly with arc resistant coolant conduit |
WO2022261289A1 (en) * | 2021-06-09 | 2022-12-15 | Watlow Electric Manufacturing Company | Cold conduit insulation device |
Also Published As
Publication number | Publication date |
---|---|
TW201344740A (en) | 2013-11-01 |
KR20140114817A (en) | 2014-09-29 |
US20170213751A1 (en) | 2017-07-27 |
WO2013105575A1 (en) | 2013-07-18 |
US20180301362A1 (en) | 2018-10-18 |
US10026631B2 (en) | 2018-07-17 |
US10629464B2 (en) | 2020-04-21 |
US20200219740A1 (en) | 2020-07-09 |
KR102021570B1 (en) | 2019-09-16 |
TWI582819B (en) | 2017-05-11 |
JP5973731B2 (en) | 2016-08-23 |
JP2013145806A (en) | 2013-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20200219740A1 (en) | Plasma processing apparatus and heater temperature control method | |
US20210272780A1 (en) | Plasma processing apparatus | |
US10199246B2 (en) | Temperature control mechanism, temperature control method and substrate processing apparatus | |
US20130319615A1 (en) | Apparatus and method for treating substrates | |
JP2019114612A (en) | Plasma etching machine and plasma etching method | |
JP6027492B2 (en) | Etching method and etching apparatus | |
US10163607B2 (en) | Temperature control method and plasma processing apparatus | |
JP2019071369A (en) | Plasma processing apparatus, elevation control method for focus ring, and elevation control program for focus ring | |
US20170092509A1 (en) | Plasma processing method | |
JP2023520217A (en) | Rapid and accurate temperature control for thermal etching | |
KR20170000360A (en) | Etching processing method and plasma processing apparatus | |
TWI808206B (en) | Plasma etching method and plasma etching device | |
TW201535569A (en) | Gas supplying method and semiconductor manufacturing apparatus | |
US20190371634A1 (en) | Substrate processing method and substrate processing apparatus | |
US10748779B2 (en) | Substrate processing method | |
US11094551B2 (en) | Plasma processing method and plasma processing apparatus | |
KR20200087693A (en) | Processing method and plasma processing apparatus | |
CN111435635B (en) | Processing method and plasma processing apparatus | |
TW202101578A (en) | Processing method and plasma processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TOKYO ELECTRON LIMITED, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:OOHASHI, KAORU;REEL/FRAME:033175/0487 Effective date: 20140623 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |