|
| US4888518 | 16. Nov. 1987 | 19. Dez. 1989 | ITT Corporation | Gas circulation apparatus for ceramic electron tubes |
| US6586886 | 19. Dez. 2001 | 1. Juli 2003 | Applied Materials, Inc. | Gas distribution plate electrode for a plasma reactor |
| US7141757 | 13. Febr. 2004 | 28. Nov. 2006 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent |
| US7186943 | 12. Apr. 2005 | 6. März 2007 | Applied Materials, Inc. | MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| US7196283 | 28. Jan. 2005 | 27. März 2007 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
| US7220937 | 8. Jan. 2004 | 22. Mai 2007 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
| US7247218 | 16. Mai 2003 | 24. Juli 2007 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
| US7359177 | 10. Mai 2005 | 15. Apr. 2008 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
| US7375947 | 7. Febr. 2007 | 20. Mai 2008 | Applied Materials, Inc. | Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output |
| US7452824 | 11. Dez. 2006 | 18. Nov. 2008 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters |
| US7470626 | 11. Dez. 2006 | 30. Dez. 2008 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7521370 | 23. Aug. 2006 | 21. Apr. 2009 | Applied Materials, Inc. | Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power |
| US7553679 | 23. Aug. 2006 | 30. Juni 2009 | Applied Materials, Inc. | Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current |
| US7585685 | 23. Aug. 2006 | 8. Sept. 2009 | Applied Materials, Inc. | Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants |
| US7795153 | 11. Dez. 2006 | 14. Sept. 2010 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters |
| US7901952 | 11. Dez. 2006 | 8. März 2011 | Applied Materials, Inc. | Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters |
| US7910013 | 11. Dez. 2006 | 22. März 2011 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7955986 | 23. Febr. 2006 | 7. Juni 2011 | Applied Materials, Inc. | Capacitively coupled plasma reactor with magnetic plasma control |
| US8048806 | 10. März 2006 | 1. Nov. 2011 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
