Suche Bilder Maps Play YouTube News Gmail Drive Mehr »
Erweiterte Patentsuche | Webprotokoll | Anmelden

Patente

Referenziert von

Zitiert von PatentEingetragenAusgestelltUrsprünglich Bevollmächtigter Titel
US40371001. März 197619. Juli 1977General Ionex CorporationUltra-sensitive spectrometer for making mass and elemental analyses
US408533019. Mai 197718. Apr. 1978Burroughs CorporationFocused ion beam mask maker
US412480224. Juni 19767. Nov. 1978Tokyo Shibaura Electric Co., Ltd.Method and apparatus for implanting radioactive gas in a base material
US45635877. Apr. 19837. Jan. 1986Hughes Aircraft CompanyFocused ion beam microfabrication column
US516651911. März 199124. Nov. 1992Electron imaging band pass analyser for a photoelectron spectromicroscope
US52931349. März 19928. März 1994United Kingdom Atomic Energy AuthorityTandem accelerator
US531306727. Mai 199217. Mai 1994Iowa State University Research Foundation, Inc.Ion processing apparatus including plasma ion source and mass spectrometer for ion deposition, ion implantation, or isotope separation
US532126230. Sept. 199214. Juni 1994Kratos Analytical LimitedElectron imaging band pass analyser for a photoelectron spectromicroscope
US572902827. Jan. 199717. März 1998Ion accelerator for use in ion implanter
US598574219. Febr. 199816. Nov. 1999Silicon Genesis CorporationControlled cleavage process and device for patterned films
US599420719. Febr. 199830. Nov. 1999Silicon Genesis CorporationControlled cleavage process using pressurized fluid
US601057919. Febr. 19984. Jan. 2000Silicon Genesis CorporationReusable substrate for thin film separation
US601356319. Febr. 199811. Jan. 2000Silicon Genesis CorporationControlled cleaning process
US602798820. Aug. 199722. Febr. 2000The Regents of the University of CaliforniaMethod of separating films from bulk substrates by plasma immersion ion implantation
US604841119. Febr. 199811. Apr. 2000Silicon Genesis CorporationSilicon-on-silicon hybrid wafer assembly
US614697919. Febr. 199814. Nov. 2000Silicon Genesis CorporationPressurized microbubble thin film separation process using a reusable substrate
US615590919. Febr. 19985. Dez. 2000Silicon Genesis CorporationControlled cleavage system using pressurized fluid
US615982419. Febr. 199812. Dez. 2000Silicon Genesis CorporationSilicon-on-silicon wafer bonding process using a thin film blister-separation method
US615982519. Febr. 199812. Dez. 2000Silicon Genesis CorporationControlled cleavage thin film separation process using a reusable substrate
US616270519. Febr. 199819. Dez. 2000Silicon Genesis CorporationControlled cleavage process and resulting device using beta annealing
US618711021. Mai 199913. Febr. 2001Silicon Genesis CorporationDevice for patterned films
US622174010. Aug. 199924. Apr. 2001Silicon Genesis CorporationSubstrate cleaving tool and method
US624516119. Febr. 199812. Juni 2001Silicon Genesis CorporationEconomical silicon-on-silicon hybrid wafer assembly
US626394110. Aug. 199924. Juli 2001Silicon Genesis CorporationNozzle for cleaving substrates
US628463110. Jan. 20004. Sept. 2001Silicon Genesis CorporationMethod and device for controlled cleaving process
US629080420. Febr. 199818. Sept. 2001Silicon Genesis CorporationControlled cleavage process using patterning
US629131318. Mai 199918. Sept. 2001Silicon Genesis CorporationMethod and device for controlled cleaving process
US629132617. Juni 199918. Sept. 2001Silicon Genesis CorporationPre-semiconductor process implant and post-process film separation
US629481424. Aug. 199925. Sept. 2001Silicon Genesis CorporationCleaved silicon thin film with rough surface
US639174028. Apr. 199921. Mai 2002Silicon Genesis CorporationGeneric layer transfer methodology by controlled cleavage process
US64586722. Nov. 20001. Okt. 2002Silicon Genesis CorporationControlled cleavage process and resulting device using beta annealing
US648604120. Febr. 200126. Nov. 2002Silicon Genesis CorporationMethod and device for controlled cleaving process
US650073227. Juli 200031. Dez. 2002Silicon Genesis CorporationCleaving process to fabricate multilayered substrates using low implantation doses
US65118996. Mai 199928. Jan. 2003Silicon Genesis CorporationControlled cleavage process using pressurized fluid
US651356414. März 20014. Febr. 2003Silicon Genesis CorporationNozzle for cleaving substrates
US652839121. Mai 19994. März 2003Silicon Genesis, CorporationControlled cleavage process and device for patterned films
US65483824. Aug. 200015. Apr. 2003Silicon Genesis CorporationGettering technique for wafers made using a controlled cleaving process
US655880229. Febr. 20006. Mai 2003Silicon Genesis CorporationSilicon-on-silicon hybrid wafer assembly
US657351731. Juli 20003. Juni 2003Sumitomo Eaton Nova CorporationIon implantation apparatus
US663272413. Jan. 200014. Okt. 2003Silicon Genesis CorporationControlled cleaving process
US67907479. Okt. 200214. Sept. 2004Silicon Genesis CorporationMethod and device for controlled cleaving process
US689083826. März 200310. Mai 2005Silicon Genesis CorporationGettering technique for wafers made using a controlled cleaving process
US705680820. Nov. 20026. Juni 2006Silicon Genesis CorporationCleaving process to fabricate multilayered substrates using low implantation doses
US716079019. Aug. 20039. Jan. 2007Silicon Genesis CorporationControlled cleaving process
US72683581. Juni 200611. Sept. 2007Fox Chase Cancer CenterMethod of modulating laser-accelerated protons for radiation therapy
US73171922. Juni 20048. Jan. 2008Fox Chase Cancer CenterHigh energy polyenergetic ion selection systems, ion beam therapy systems, and ion beam treatment centers
US73482586. Aug. 200425. März 2008Silicon Genesis CorporationMethod and device for controlled cleaving process
US737166016. Nov. 200513. Mai 2008Silicon Genesis CorporationControlled cleaving process
US741088726. Jan. 200712. Aug. 2008Silicon Genesis CorporationControlled process and resulting device
US775921726. Jan. 200720. Juli 2010Silicon Genesis CorporationControlled process and resulting device
US777671720. Aug. 200717. Aug. 2010Silicon Genesis CorporationControlled process and resulting device
US78119007. Sept. 200712. Okt. 2010Silicon Genesis CorporationMethod and structure for fabricating solar cells using a thick layer transfer process
US784681810. Juli 20087. Dez. 2010Silicon Genesis CorporationControlled process and resulting device
US81873774. Okt. 200229. Mai 2012Silicon Genesis CorporationNon-contact etch annealing of strained layers
USRE3334424. Dez. 198518. Sept. 1990Finnigan CorporationApparatus and method for detecting negative ions

Zeichnungen