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Patente

Referenziert von

Zitiert von PatentEingetragenAusgestelltUrsprünglich Bevollmächtigter Titel
US54127163. Mai 19932. Mai 1995AT&T Bell LaboratoriesSystem for efficiently powering repeaters in small diameter cables
US637374030. Juli 199916. Apr. 2002Micron Technology, Inc.Transmission lines for CMOS integrated circuits
US64492589. Dez. 199810. Sept. 2002AlcatelIntermediate repeater for a communication network for the reception and forwarding of frequency multiplexed signals
US65290919. März 20014. März 2003TDK CorporationAbsorptive circuit element, absorptive low-pass filter and manufacturing method of the filter
US67378873. Juli 200118. Mai 2004Micron Technology, Inc.Current mode signal interconnects and CMOS amplifier
US678788820. Febr. 20037. Sept. 2004Micron Technology, Inc.High permeability composite films to reduce noise in high speed interconnects
US679473520. Febr. 200321. Sept. 2004Micron Technology, Inc.High permeability composite films to reduce noise in high speed interconnects
US681580420. Febr. 20039. Nov. 2004Micron Technology, Inc.High permeability composite films to reduce noise in high speed interconnects
US683331720. Febr. 200321. Dez. 2004Micron Technology, Inc.High permeability composite films to reduce noise in high speed interconnects
US684425620. Febr. 200318. Jan. 2005Micron Technology, Inc.High permeability composite films to reduce noise in high speed interconnects
US684673813. März 200225. Jan. 2005Micron Technology, Inc.High permeability composite films to reduce noise in high speed interconnects
US688470620. Febr. 200326. Apr. 2005Micron Technology Inc.High permeability thin films and patterned thin films to reduce noise in high speed interconnections
US690011613. März 200231. Mai 2005Micron Technology Inc.High permeability thin films and patterned thin films to reduce noise in high speed interconnections
US690300320. Febr. 20037. Juni 2005Micron Technology, Inc.High permeability composite films to reduce noise in high speed interconnects
US690344420. Febr. 20037. Juni 2005Micron Technology Inc.High permeability thin films and patterned thin films to reduce noise in high speed interconnections
US690640220. Febr. 200314. Juni 2005Micron Technology Inc.High permeability thin films and patterned thin films to reduce noise in high speed interconnections
US691427820. Febr. 20035. Juli 2005Micron Technology Inc.High permeability thin films and patterned thin films to reduce noise in high speed interconnections
US697005322. Mai 200329. Nov. 2005Micron Technology, Inc.Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection
US710177030. Jan. 20025. Sept. 2006Micron Technology, Inc.Capacitive techniques to reduce noise in high speed interconnections
US71017786. Juni 20025. Sept. 2006Micron Technology, Inc.Transmission lines for CMOS integrated circuits
US715435422. Febr. 200526. Dez. 2006Micron Technology, Inc.High permeability layered magnetic films to reduce noise in high speed interconnection
US723545713. März 200226. Juni 2007Micron Technology, Inc.High permeability layered films to reduce noise in high speed interconnects
US73270163. Aug. 20045. Febr. 2008Micron Technology, Inc.High permeability composite films to reduce noise in high speed interconnects
US73359689. Aug. 200426. Febr. 2008Micron Technology, Inc.High permeability composite films to reduce noise in high speed interconnects
US737196630. Juni 200513. Mai 2008Intel CorporationHigh speed active flex cable link
US737541431. Aug. 200420. Mai 2008Micron Technology, Inc.High permeability layered films to reduce noise in high speed interconnects
US73916373. Aug. 200424. Juni 2008Micron Technology, Inc.Semiconductor memory device with high permeability composite films to reduce noise in high speed interconnects
US740545426. Aug. 200529. Juli 2008Micron Technology, Inc.Electronic apparatus with deposited dielectric layers
US748328627. Juli 200627. Jan. 2009Micron Technology, Inc.Semiconductor memory device with high permeability lines interposed between adjacent transmission lines
US755482926. Jan. 200630. Juni 2009Micron Technology, Inc.Transmission lines for CMOS integrated circuits
US760204931. Aug. 200413. Okt. 2009Micron Technology, Inc.Capacitive techniques to reduce noise in high speed interconnections
US773753618. Juli 200615. Juni 2010Micron Technology, Inc.Capacitive techniques to reduce noise in high speed interconnections
US782997925. Juli 20069. Nov. 2010Micron Technology, Inc.High permeability layered films to reduce noise in high speed interconnects
US786924228. Apr. 200911. Jan. 2011Micron Technology, Inc.Transmission lines for CMOS integrated circuits