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Zitiert von PatentEingetragenAusgestelltUrsprünglich Bevollmächtigter Titel
US398895511. Sept. 19742. Nov. 1976Coated steel product and process of producing the same
US410544325. Jan. 19778. Aug. 1978United Kingdom Atomic Energy AuthorityMetal-forming dies
US448624721. Juni 19824. Dez. 1984Westinghouse Electric Corp.Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof
US45657106. Juni 198421. Jan. 1986The United States of America as represented by the Secretary of the NavyProcess for producing carbide coatings
US46296319. Sept. 198516. Dez. 1986United Kingdom Atomic Energy AuthoritySurface treatment of metals
US464016928. März 19853. Febr. 1987Westinghouse Electric Corp.Cemented carbide cutting tools and processes for making and using
US464571517. März 198224. Febr. 1987Energy Conversion Devices, Inc.Coating composition and method
US470416829. Jan. 19863. Nov. 1987The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationIon-beam nitriding of steels
US476439420. Jan. 198716. Aug. 1988Wisconsin Alumni Research FoundationMethod and apparatus for plasma source ion implantation
US491574615. Aug. 198810. Apr. 1990Method of forming high temperature barriers in structural metals to make such metals creep resistant at high homologous temperatures
US598574219. Febr. 199816. Nov. 1999Silicon Genesis CorporationControlled cleavage process and device for patterned films
US599420719. Febr. 199830. Nov. 1999Silicon Genesis CorporationControlled cleavage process using pressurized fluid
US601057919. Febr. 19984. Jan. 2000Silicon Genesis CorporationReusable substrate for thin film separation
US601356319. Febr. 199811. Jan. 2000Silicon Genesis CorporationControlled cleaning process
US602798820. Aug. 199722. Febr. 2000The Regents of the University of CaliforniaMethod of separating films from bulk substrates by plasma immersion ion implantation
US604841119. Febr. 199811. Apr. 2000Silicon Genesis CorporationSilicon-on-silicon hybrid wafer assembly
US60986553. Dez. 19968. Aug. 2000Carolina Power & Light CompanyAlleviating sticking of normally closed valves in nuclear reactor plants
US614697919. Febr. 199814. Nov. 2000Silicon Genesis CorporationPressurized microbubble thin film separation process using a reusable substrate
US615590919. Febr. 19985. Dez. 2000Silicon Genesis CorporationControlled cleavage system using pressurized fluid
US615982419. Febr. 199812. Dez. 2000Silicon Genesis CorporationSilicon-on-silicon wafer bonding process using a thin film blister-separation method
US615982519. Febr. 199812. Dez. 2000Silicon Genesis CorporationControlled cleavage thin film separation process using a reusable substrate
US616270519. Febr. 199819. Dez. 2000Silicon Genesis CorporationControlled cleavage process and resulting device using beta annealing
US618711021. Mai 199913. Febr. 2001Silicon Genesis CorporationDevice for patterned films
US622174010. Aug. 199924. Apr. 2001Silicon Genesis CorporationSubstrate cleaving tool and method
US624516119. Febr. 199812. Juni 2001Silicon Genesis CorporationEconomical silicon-on-silicon hybrid wafer assembly
US626394110. Aug. 199924. Juli 2001Silicon Genesis CorporationNozzle for cleaving substrates
US628463110. Jan. 20004. Sept. 2001Silicon Genesis CorporationMethod and device for controlled cleaving process
US629131318. Mai 199918. Sept. 2001Silicon Genesis CorporationMethod and device for controlled cleaving process
US629132617. Juni 199918. Sept. 2001Silicon Genesis CorporationPre-semiconductor process implant and post-process film separation
US629481424. Aug. 199925. Sept. 2001Silicon Genesis CorporationCleaved silicon thin film with rough surface
US639174028. Apr. 199921. Mai 2002Silicon Genesis CorporationGeneric layer transfer methodology by controlled cleavage process
US64586722. Nov. 20001. Okt. 2002Silicon Genesis CorporationControlled cleavage process and resulting device using beta annealing
US648604120. Febr. 200126. Nov. 2002Silicon Genesis CorporationMethod and device for controlled cleaving process
US650073227. Juli 200031. Dez. 2002Silicon Genesis CorporationCleaving process to fabricate multilayered substrates using low implantation doses
US65118996. Mai 199928. Jan. 2003Silicon Genesis CorporationControlled cleavage process using pressurized fluid
US651356414. März 20014. Febr. 2003Silicon Genesis CorporationNozzle for cleaving substrates
US652839121. Mai 19994. März 2003Silicon Genesis, CorporationControlled cleavage process and device for patterned films
US65483824. Aug. 200015. Apr. 2003Silicon Genesis CorporationGettering technique for wafers made using a controlled cleaving process
US655404627. Nov. 200029. Apr. 2003Silicon Genesis CorporationSubstrate cleaving tool and method
US655880229. Febr. 20006. Mai 2003Silicon Genesis CorporationSilicon-on-silicon hybrid wafer assembly
US663272413. Jan. 200014. Okt. 2003Silicon Genesis CorporationControlled cleaving process
US67907479. Okt. 200214. Sept. 2004Silicon Genesis CorporationMethod and device for controlled cleaving process
US689083826. März 200310. Mai 2005Silicon Genesis CorporationGettering technique for wafers made using a controlled cleaving process
US705680820. Nov. 20026. Juni 2006Silicon Genesis CorporationCleaving process to fabricate multilayered substrates using low implantation doses
US716079019. Aug. 20039. Jan. 2007Silicon Genesis CorporationControlled cleaving process
US73482586. Aug. 200425. März 2008Silicon Genesis CorporationMethod and device for controlled cleaving process
US737166016. Nov. 200513. Mai 2008Silicon Genesis CorporationControlled cleaving process
US741088726. Jan. 200712. Aug. 2008Silicon Genesis CorporationControlled process and resulting device
US775921726. Jan. 200720. Juli 2010Silicon Genesis CorporationControlled process and resulting device
US777671720. Aug. 200717. Aug. 2010Silicon Genesis CorporationControlled process and resulting device
US78119007. Sept. 200712. Okt. 2010Silicon Genesis CorporationMethod and structure for fabricating solar cells using a thick layer transfer process
US784681810. Juli 20087. Dez. 2010Silicon Genesis CorporationControlled process and resulting device
US81873774. Okt. 200229. Mai 2012Silicon Genesis CorporationNon-contact etch annealing of strained layers