US3901423A - Method for fracturing crystalline materials - Google Patents

Method for fracturing crystalline materials Download PDF

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US3901423A
US3901423A US41889573A US3901423A US 3901423 A US3901423 A US 3901423A US 41889573 A US41889573 A US 41889573A US 3901423 A US3901423 A US 3901423A
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rod
crystal
fracturing
force
predetermined
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Benny M Hillberry
Robert J Myers
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Purdue Research Foundation
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Purdue Research Foundation
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening

Definitions

  • This disclosure relates to a method for fracturing crystalline materials whereby thin wafers may be produced with minimum waste of the crystal.
  • This invention relates to a method for fracturing solid materials, and more particularly to a method for fracturing a single crystal whereby thin wafers or slices having a desired thickness and fracture surface configuration are produced.
  • crystals or rods of semiconductor material are generally cut into thin slices or wafers by a saw blade for further processing. These slices are typically in the order of 0.010 to 0.015 inch thick which is about the same thickness as the cutting blade. In many cases the thickness of the slice is nearly the same as the cutoff wheel kerf loss which results in an immediate loss of up to 50 percent of the semiconductor material. Also the slicing operation is in itself time consuming and results in considerable scrap due to breakage of the slices.
  • the present invention is a method of fracturing a crystal (such as silicon or germanium) in a transverse manner in order to produce thin wafers.
  • the basic method for creating the desired fracture is by imparting a desired stress distribution to the solid which predetermines the direction of crack growth and then by initiating the fracture at the desired location.
  • FIG. I is a schematic view of a silicon crystal prepared for fracture.
  • FIG. 2 is a perspective view of the silicon crystal.
  • One method that has been employed to create flat fracture surfaces of silicon rods is by application of a tensile load, shown as L in FIG. 1, to the material 1 and then the fracture is initiated at the predetermined fracture plane 2 by forcing a wedge 3 into a previously formed notch 4 on one or both sides of the material 1.
  • a tensile load shown as L in FIG. 1
  • the size and shape of the notch 4 and the wedge 3 the magnitude of the tensile load L and the force F on the wedge and, if only one wedge is used, the type of support 5 opposite the wedge.
  • the method illustrated in FIG. 1 has been employed to create thin slices 6 from a semiconductor grade single crystal 1 of silicon.
  • a flat 7 is cut on one side of the crystal and a notch 4 is cut across this flat perpendicular to the axis 8 of the rod as illustrated in FIG. 2.
  • the blocks 9 for imparting the tensile load are adhered to the crystal 1 with mounting wax I0.
  • the tensile load L is applied and then the wedge 3 is forced into the notch 4 to initiate the fracture.
  • Vari ous types of supports have been used including a wedge with an additional notch in the material (not shown)v
  • a spherical support 5 has given the best experimental results but other support configurations will also give satisfactory results.
  • One or more notches can be used with or without more than one wedge. Scribe lines on the surface of the crystal and in the notch can be used to aid in initiating and guiding the fracture.
  • the geometry of the notch as well as the wedge can be varied. A flat on none, one, or more sides can be used. Impact loading to the wedge may also be used.
  • the preloading force L described above may also be compressive, a bending moment, a torsional moment, shear or any combination of these loadings which may be applied to the crystal before and/or during fracture so long as the forces applied to the crystal surface produce an internal force in the crystal that acts substantially perpendicular to the desired fracture plane.
  • Any loading configuration may be used to create a controlled stress pattern of the desired form in the crystal.
  • the wedge used in initiating the fracture may be substituted for in several fashions.
  • expanding materials can be placed in the notch and made to expand sufficiently in the notch to initiate fracture.
  • Other mechanical and thermal methods may also be used.
  • exploding wires, exploding materials, stress waves or impact loads can be introduced into the notch or crystal to initiate the fracture.
  • This novel method is divided into three essential parts, the step of introducing a preselected stress concentration into the material, the step of applying an internal tensile stress acting normally upon the desired fracture plane, and the step of fracturing the crystal by application of predetermined forces acting substantially perpendicular to the predetermined fracture plane. Examples of specific modes of accomplishing the various steps of the method are as follows:
  • the step of introducing a preselected stress concentration into the crystal may be accomplished by:
  • the step of applying an internal tensile stress acting normally upon the desired fracture plane may be accomplished by:
  • the step of fracturing the crystal may be accomplished by:
  • a method for producing thin wafers from crystalline material characterized by:
  • the step of initiating fracturing of the crystal while maintaining the application of tensile stress by aprial is accomplished by application of a loading mode to the crystal exterior surface.

Abstract

This disclosure relates to a method for fracturing crystalline materials whereby thin wafers may be produced with minimum waste of the crystal.

Description

United States Patent Hillberry et a1.
[4 1 Aug. 26, 1975 METHOD FOR FRACTURING CRYSTALLINE MATERIALS Inventors: Benny M. Hillberry, West Lafayette;
Robert J. Myers, Kokomo. both of Ind.
Assignee: Purdue Research Foundation, Lafayette, 1nd. 1
Filed: Nov. 26, 1973 App]. No: 418,895
US. Cl 225/2; 125/1; 125/23 R Int. C1. B26F 3/02 Field of Search 125/1, 23 R, 23 T; 225/2,
References Cited UNITED STATES PATENTS Alexander 1 a 125/1 Potcct r. 225/101 X Fresne 1 r r w 125/23 R Woclfle A 1 225/2 Jiniszewski.. 225/2 Grove .5 225/93.5
Primary Examinerl-larold D. Whitehead ABSTRACT This disclosure relates to a method for fracturing crystalline materials whereby thin wafers may be produced with minimum waste of the crystal.
8 Claims, 2 Drawing Figures METHOD FOR FRACTURING CRYSTALLINE MATERIALS FIELD OF THE INVENTION This invention relates to a method for fracturing solid materials, and more particularly to a method for fracturing a single crystal whereby thin wafers or slices having a desired thickness and fracture surface configuration are produced.
BACKGROUND OF THE INVENTION In the manufacture of transistors and other solid state devices crystals or rods of semiconductor material are generally cut into thin slices or wafers by a saw blade for further processing. These slices are typically in the order of 0.010 to 0.015 inch thick which is about the same thickness as the cutting blade. In many cases the thickness of the slice is nearly the same as the cutoff wheel kerf loss which results in an immediate loss of up to 50 percent of the semiconductor material. Also the slicing operation is in itself time consuming and results in considerable scrap due to breakage of the slices.
SUMMARY OF THE INVENTION The present invention is a method of fracturing a crystal (such as silicon or germanium) in a transverse manner in order to produce thin wafers.
The basic method for creating the desired fracture is by imparting a desired stress distribution to the solid which predetermines the direction of crack growth and then by initiating the fracture at the desired location.
The major advantages of this process are the realization of material savings in creating slices of semiconductor crystals and reducing manufacturing costs of making semiconductor devices.
DESCRIPTION OF THE DRAWINGS FIG. I is a schematic view of a silicon crystal prepared for fracture.
FIG. 2 is a perspective view of the silicon crystal.
DETAILED DESCRIPTION OF THE INVENTION One method that has been employed to create flat fracture surfaces of silicon rods is by application of a tensile load, shown as L in FIG. 1, to the material 1 and then the fracture is initiated at the predetermined fracture plane 2 by forcing a wedge 3 into a previously formed notch 4 on one or both sides of the material 1. Several items critical to the method include the method of applying the tensile load. shown as L in FIG. 1, the size and shape of the notch 4 and the wedge 3, the magnitude of the tensile load L and the force F on the wedge and, if only one wedge is used, the type of support 5 opposite the wedge. The method illustrated in FIG. 1 has been employed to create thin slices 6 from a semiconductor grade single crystal 1 of silicon. A flat 7 is cut on one side of the crystal and a notch 4 is cut across this flat perpendicular to the axis 8 of the rod as illustrated in FIG. 2. The blocks 9 for imparting the tensile load are adhered to the crystal 1 with mounting wax I0. The tensile load L is applied and then the wedge 3 is forced into the notch 4 to initiate the fracture. Vari ous types of supports have been used including a wedge with an additional notch in the material (not shown)v A spherical support 5 has given the best experimental results but other support configurations will also give satisfactory results.
Several methods for adhering the blocks to the crystal can be used. Similarly, several methods for making the notch can be used. One or more notches can be used with or without more than one wedge. Scribe lines on the surface of the crystal and in the notch can be used to aid in initiating and guiding the fracture. The geometry of the notch as well as the wedge can be varied. A flat on none, one, or more sides can be used. Impact loading to the wedge may also be used. In addition, it is possible to initiate the fracture without a precut notch by using a sharp wedge.
There are a large number of variations that may be applied to this method, for example the preloading force L described above may also be compressive, a bending moment, a torsional moment, shear or any combination of these loadings which may be applied to the crystal before and/or during fracture so long as the forces applied to the crystal surface produce an internal force in the crystal that acts substantially perpendicular to the desired fracture plane. Any loading configuration may be used to create a controlled stress pattern of the desired form in the crystal.
The wedge used in initiating the fracture may be substituted for in several fashions. In the static or quasistatic case, expanding materials can be placed in the notch and made to expand sufficiently in the notch to initiate fracture. Other mechanical and thermal methods may also be used. In dynamic cases, exploding wires, exploding materials, stress waves or impact loads can be introduced into the notch or crystal to initiate the fracture. This novel method is divided into three essential parts, the step of introducing a preselected stress concentration into the material, the step of applying an internal tensile stress acting normally upon the desired fracture plane, and the step of fracturing the crystal by application of predetermined forces acting substantially perpendicular to the predetermined fracture plane. Examples of specific modes of accomplishing the various steps of the method are as follows:
A. The step of introducing a preselected stress concentration into the crystal may be accomplished by:
l. A notch.
2. A scribe line.
3. Any physical deformation of the crystal that produces the desired stress concentration therein.
B. The step of applying an internal tensile stress acting normally upon the desired fracture plane may be accomplished by:
. Tensile force.
. Compressive force.
. Shear force.
. Bending moment.
. Torsional moment.
. Any combination of the foregoing forces that produces internal tensile force normal to the fracture plane.
C. The step of fracturing the crystal may be accomplished by:
1. A wedge, or wedges.
2. Expanding material in a notch. 3. Thermal expansions and shock. 4. An exploding wire.
5. A stress wave.
6. An impact load.
7. Other similar mechanical means or combinations of the above.
Other combinations of mechanical expedients can be employed to obtain the desired slices or wafers as will be readily appreciated by those skilled in the art once the force and stress relationships necessary to accomplish the method are realized.
What is claimed is:
l. A method for producing thin wafers from crystalline material characterized by:
the step of introducing a preselected stress concentration into a crystal along a line to establish a predetermined fracture plane that will produce a thin wafer whereby the location of the fracture initiation is predetermined;
the step of applying a continuing tensile stress acting normally upon the predetermined fracture plane; and
the step of initiating fracturing of the crystal while maintaining the application of tensile stress by aprial is accomplished by application of a loading mode to the crystal exterior surface.
4. The method according to claim 3 in which said loading mode is applied by application of at least one external force acting upon said crystal.
5. The method according to claim 1 in which the step of fracturing the crystal is accomplished by a force applied to the material by a mechanical expedient.
6. The method according to claim 5 in which said force applied by said mechanical expedient is by means of a wedge applied in the direction of the predetermined fracture plane.
7. A method for producing thin wafers from a crystalline rod characterized by the steps of:
providing a flat side on the rod, which flat is disposed normally to a line extending from the mid-point of said flat to the center of said rod;
notching said flat surface along a line where it is desired to initiate fracture of the rod;
applying tensile stress to the rod stock in an axial direction; and
applying a fracturing force into said notch acting substantially perpendicular to the longitudinal rod axis whereby the rod is fractured substantially transversely with respect to the longitudinal axis of the rod.
8. The method of claim 7 in which the fracture is initiated by driving a wedge into the notch and a support force is applied to prevent movement of the rod in a transverse direction.

Claims (8)

1. A method for producing thin wafers from crystalline material characterized by: the step of introducing a preselected stress concentration into a crystal along a line to establish a predetermined fracture plane that will produce a thin wafer whereby the location of the fracture initiation is predetermined; the step of applying a continuing tensile stress acting normally upon the predetermined fracture plane; and the step of initiating fracturing of the crystal while maintaining the application of tensile stress by application of a sudden acting fracturing force acting substantially perpendicular to the predetermined fracture plane whereby said applied fracturing force and tensile stress enables saId thin wafers to be produced at said location predetermined by said introduced stress concentration.
2. The method according to claim 1 in which the stress concentration is accomplished by a mechanical expedient causing physical deformation of the crystal to produce a predetermined force concentration.
3. The method according to claim 1 in which the step of introducing the tensile stress internally in the material is accomplished by application of a loading mode to the crystal exterior surface.
4. The method according to claim 3 in which said loading mode is applied by application of at least one external force acting upon said crystal.
5. The method according to claim 1 in which the step of fracturing the crystal is accomplished by a force applied to the material by a mechanical expedient.
6. The method according to claim 5 in which said force applied by said mechanical expedient is by means of a wedge applied in the direction of the predetermined fracture plane.
7. A method for producing thin wafers from a crystalline rod characterized by the steps of: providing a flat side on the rod, which flat is disposed normally to a line extending from the mid-point of said flat to the center of said rod; notching said flat surface along a line where it is desired to initiate fracture of the rod; applying tensile stress to the rod stock in an axial direction; and applying a fracturing force into said notch acting substantially perpendicular to the longitudinal rod axis whereby the rod is fractured substantially transversely with respect to the longitudinal axis of the rod.
8. The method of claim 7 in which the fracture is initiated by driving a wedge into the notch and a support force is applied to prevent movement of the rod in a transverse direction.
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Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184472A (en) * 1978-05-15 1980-01-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method and apparatus for slicing crystals
US4244348A (en) * 1979-09-10 1981-01-13 Atlantic Richfield Company Process for cleaving crystalline materials
US4343287A (en) * 1980-08-29 1982-08-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Crystal cleaving machine
US4955357A (en) * 1988-01-22 1990-09-11 Hi-Silicon Co., Ltd. Method and apparatus for cutting polycrystalline silicon rods
US5740953A (en) * 1991-08-14 1998-04-21 Sela Semiconductor Engineering Laboratories Method and apparatus for cleaving semiconductor wafers
US5918587A (en) * 1995-02-28 1999-07-06 Shin-Etsu Handotai Co., Ltd. Method of producing slices
US5994207A (en) * 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6184111B1 (en) 1998-06-23 2001-02-06 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6205993B1 (en) * 1999-04-15 2001-03-27 Integrated Materials, Inc. Method and apparatus for fabricating elongate crystalline members
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6225594B1 (en) 1999-04-15 2001-05-01 Integrated Materials, Inc. Method and apparatus for securing components of wafer processing fixtures
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6284631B1 (en) 1997-05-12 2001-09-04 Silicon Genesis Corporation Method and device for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6357432B2 (en) 1999-04-15 2002-03-19 Integrated Materials, Inc. Silicon support members for wafer processing fixtures
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
WO2003048410A1 (en) * 2001-11-30 2003-06-12 Advanced Silicon Materials Llc Method for inducing controlled cleavage of polyrystalline silicon rod
US20030124815A1 (en) * 1999-08-10 2003-07-03 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US20040050483A1 (en) * 2002-07-17 2004-03-18 Bruno Ghyselen Method of fabricating substrates, in partictular for optics, electronics or optoelectronics
US20040067644A1 (en) * 2002-10-04 2004-04-08 Malik Igor J. Non-contact etch annealing of strained layers
US20040188487A1 (en) * 2001-08-07 2004-09-30 Thierry Barge Apparatus and method for splitting substrates
WO2005122243A2 (en) 2004-06-03 2005-12-22 Owens Technology, Inc. Method and apparatus for cleaving brittle materials
USRE39484E1 (en) 1991-09-18 2007-02-06 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
US20090130392A1 (en) * 1996-05-15 2009-05-21 Commissariat A L'energie Atomique (Cea) Method of producing a thin layer of semiconductor material
US20090277314A1 (en) * 2008-05-07 2009-11-12 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US20100176493A1 (en) * 2007-10-23 2010-07-15 Nadia Ben Mohamed Method of splitting a substrate
US7776717B2 (en) 1997-05-12 2010-08-17 Silicon Genesis Corporation Controlled process and resulting device
CN101267920B (en) * 2004-06-03 2010-08-18 欧文斯科技公司 Method for cleaving brittle materials
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US20100289189A1 (en) * 2007-11-02 2010-11-18 President And Fellows Of Harvard College Production of free-standing solid state layers by thermal processing of substrates with a polymer
US7883994B2 (en) 1997-12-30 2011-02-08 Commissariat A L'energie Atomique Process for the transfer of a thin film
US20110053376A1 (en) * 2009-08-25 2011-03-03 Samsung Electronics Co., Ltd. Wafer dividing apparatus and methods
US7902038B2 (en) 2001-04-13 2011-03-08 Commissariat A L'energie Atomique Detachable substrate with controlled mechanical strength and method of producing same
US7960248B2 (en) 2007-12-17 2011-06-14 Commissariat A L'energie Atomique Method for transfer of a thin layer
US8048766B2 (en) 2003-06-24 2011-11-01 Commissariat A L'energie Atomique Integrated circuit on high performance chip
US8142593B2 (en) 2005-08-16 2012-03-27 Commissariat A L'energie Atomique Method of transferring a thin film onto a support
US8193069B2 (en) 2003-07-21 2012-06-05 Commissariat A L'energie Atomique Stacked structure and production method thereof
US8252663B2 (en) 2009-06-18 2012-08-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8309431B2 (en) 2003-10-28 2012-11-13 Commissariat A L'energie Atomique Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US8389379B2 (en) 2002-12-09 2013-03-05 Commissariat A L'energie Atomique Method for making a stressed structure designed to be dissociated
US20130237126A1 (en) * 2012-03-12 2013-09-12 Memc Electronic Materials Spa System For Machining Seed Rods For Use In A Chemical Vapor Deposition Polysilicon Reactor
US8778775B2 (en) 2006-12-19 2014-07-15 Commissariat A L'energie Atomique Method for preparing thin GaN layers by implantation and recycling of a starting substrate
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9399310B2 (en) 2013-06-28 2016-07-26 D. L. Cetrangolo Method for producing thin rock-faced veneers from granitic stone slabs
US9718215B2 (en) 2015-04-15 2017-08-01 Halo Industries, Inc. Capacitive clamping process for cleaving work pieces using crack propagation
CN109866347A (en) * 2019-02-14 2019-06-11 厦门芯光润泽科技有限公司 Silicon carbide crystal bar multi-line cutting method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1797748A (en) * 1927-11-29 1931-03-24 Cold Spring Granite Co Inc Method of splitting stone
US2630174A (en) * 1948-12-07 1953-03-03 Stephen W Poteet Method of and means for cutting tubing
US3187739A (en) * 1963-12-27 1965-06-08 Gen Dynamics Corp Method and apparatus for shaping crystals
US3542266A (en) * 1967-05-29 1970-11-24 Siemens Ag Method of producing a plurality of separate semiconductor components from a semiconductor crystal body
US3659764A (en) * 1970-03-16 1972-05-02 Kasimir Janiszewski Method and apparatus for severing cylindrical stock
US3800991A (en) * 1972-04-10 1974-04-02 Ppg Industries Inc Method of and an apparatus for cutting glass

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1797748A (en) * 1927-11-29 1931-03-24 Cold Spring Granite Co Inc Method of splitting stone
US2630174A (en) * 1948-12-07 1953-03-03 Stephen W Poteet Method of and means for cutting tubing
US3187739A (en) * 1963-12-27 1965-06-08 Gen Dynamics Corp Method and apparatus for shaping crystals
US3542266A (en) * 1967-05-29 1970-11-24 Siemens Ag Method of producing a plurality of separate semiconductor components from a semiconductor crystal body
US3659764A (en) * 1970-03-16 1972-05-02 Kasimir Janiszewski Method and apparatus for severing cylindrical stock
US3800991A (en) * 1972-04-10 1974-04-02 Ppg Industries Inc Method of and an apparatus for cutting glass

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184472A (en) * 1978-05-15 1980-01-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method and apparatus for slicing crystals
US4244348A (en) * 1979-09-10 1981-01-13 Atlantic Richfield Company Process for cleaving crystalline materials
US4343287A (en) * 1980-08-29 1982-08-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Crystal cleaving machine
US4955357A (en) * 1988-01-22 1990-09-11 Hi-Silicon Co., Ltd. Method and apparatus for cutting polycrystalline silicon rods
US5740953A (en) * 1991-08-14 1998-04-21 Sela Semiconductor Engineering Laboratories Method and apparatus for cleaving semiconductor wafers
USRE39484E1 (en) 1991-09-18 2007-02-06 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
US5918587A (en) * 1995-02-28 1999-07-06 Shin-Etsu Handotai Co., Ltd. Method of producing slices
US8101503B2 (en) 1996-05-15 2012-01-24 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
US20090130392A1 (en) * 1996-05-15 2009-05-21 Commissariat A L'energie Atomique (Cea) Method of producing a thin layer of semiconductor material
US6790747B2 (en) 1997-05-12 2004-09-14 Silicon Genesis Corporation Method and device for controlled cleaving process
US20070123013A1 (en) * 1997-05-12 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6486041B2 (en) 1997-05-12 2002-11-26 Silicon Genesis Corporation Method and device for controlled cleaving process
US7160790B2 (en) 1997-05-12 2007-01-09 Silicon Genesis Corporation Controlled cleaving process
US20050186758A1 (en) * 1997-05-12 2005-08-25 Silicon Genesis Corporation Controlled cleaving process
US6245161B1 (en) 1997-05-12 2001-06-12 Silicon Genesis Corporation Economical silicon-on-silicon hybrid wafer assembly
US6458672B1 (en) 1997-05-12 2002-10-01 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6284631B1 (en) 1997-05-12 2001-09-04 Silicon Genesis Corporation Method and device for controlled cleaving process
US7348258B2 (en) 1997-05-12 2008-03-25 Silicon Genesis Corporation Method and device for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6290804B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Controlled cleavage process using patterning
US6294814B1 (en) 1997-05-12 2001-09-25 Silicon Genesis Corporation Cleaved silicon thin film with rough surface
US7371660B2 (en) 1997-05-12 2008-05-13 Silicon Genesis Corporation Controlled cleaving process
US6391740B1 (en) 1997-05-12 2002-05-21 Silicon Genesis Corporation Generic layer transfer methodology by controlled cleavage process
US7759217B2 (en) 1997-05-12 2010-07-20 Silicon Genesis Corporation Controlled process and resulting device
US6187110B1 (en) 1997-05-12 2001-02-13 Silicon Genesis Corporation Device for patterned films
US5994207A (en) * 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6511899B1 (en) 1997-05-12 2003-01-28 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6528391B1 (en) 1997-05-12 2003-03-04 Silicon Genesis, Corporation Controlled cleavage process and device for patterned films
US6162705A (en) * 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6632724B2 (en) 1997-05-12 2003-10-14 Silicon Genesis Corporation Controlled cleaving process
US7410887B2 (en) 1997-05-12 2008-08-12 Silicon Genesis Corporation Controlled process and resulting device
US6558802B1 (en) 1997-05-12 2003-05-06 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US7846818B2 (en) 1997-05-12 2010-12-07 Silicon Genesis Corporation Controlled process and resulting device
US20030113983A1 (en) * 1997-05-12 2003-06-19 Silicon Genesis Corporation Method and device for controlled cleaving process
US7776717B2 (en) 1997-05-12 2010-08-17 Silicon Genesis Corporation Controlled process and resulting device
US20040097055A1 (en) * 1997-07-18 2004-05-20 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6890838B2 (en) 1997-07-18 2005-05-10 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US8609514B2 (en) 1997-12-10 2013-12-17 Commissariat A L'energie Atomique Process for the transfer of a thin film comprising an inclusion creation step
US7883994B2 (en) 1997-12-30 2011-02-08 Commissariat A L'energie Atomique Process for the transfer of a thin film
US20110092051A1 (en) * 1997-12-30 2011-04-21 Commissariat A L'energie Atomique Process for the transfer of a thin film comprising an inclusion creation step
US8470712B2 (en) 1997-12-30 2013-06-25 Commissariat A L'energie Atomique Process for the transfer of a thin film comprising an inclusion creation step
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6184111B1 (en) 1998-06-23 2001-02-06 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6617540B2 (en) 1999-04-15 2003-09-09 Integrated Materials, Inc. Wafer support fixture composed of silicon
US6357432B2 (en) 1999-04-15 2002-03-19 Integrated Materials, Inc. Silicon support members for wafer processing fixtures
US6225594B1 (en) 1999-04-15 2001-05-01 Integrated Materials, Inc. Method and apparatus for securing components of wafer processing fixtures
US6205993B1 (en) * 1999-04-15 2001-03-27 Integrated Materials, Inc. Method and apparatus for fabricating elongate crystalline members
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US7056808B2 (en) 1999-08-10 2006-06-06 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6513564B2 (en) 1999-08-10 2003-02-04 Silicon Genesis Corporation Nozzle for cleaving substrates
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6554046B1 (en) 1999-08-10 2003-04-29 Silicon Genesis Corporation Substrate cleaving tool and method
US20030124815A1 (en) * 1999-08-10 2003-07-03 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
US7902038B2 (en) 2001-04-13 2011-03-08 Commissariat A L'energie Atomique Detachable substrate with controlled mechanical strength and method of producing same
US20040188487A1 (en) * 2001-08-07 2004-09-30 Thierry Barge Apparatus and method for splitting substrates
US7017570B2 (en) * 2001-08-07 2006-03-28 S.O.I.Tec Silicon On Insulator Technologies S.A. Apparatus and method for splitting substrates
US7648888B2 (en) 2001-08-07 2010-01-19 S.O.I.Tec Silicon On Insulator Technologies Apparatus and method for splitting substrates
US6676916B2 (en) 2001-11-30 2004-01-13 Advanced Silicon Materials Llc Method for inducing controlled cleavage of polycrystalline silicon rod
WO2003048410A1 (en) * 2001-11-30 2003-06-12 Advanced Silicon Materials Llc Method for inducing controlled cleavage of polyrystalline silicon rod
US20040050483A1 (en) * 2002-07-17 2004-03-18 Bruno Ghyselen Method of fabricating substrates, in partictular for optics, electronics or optoelectronics
US6858107B2 (en) * 2002-07-17 2005-02-22 S.O.I. Tec Silicon On Insulator Technologies S.A. Method of fabricating substrates, in particular for optics, electronics or optoelectronics
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US20040067644A1 (en) * 2002-10-04 2004-04-08 Malik Igor J. Non-contact etch annealing of strained layers
US8389379B2 (en) 2002-12-09 2013-03-05 Commissariat A L'energie Atomique Method for making a stressed structure designed to be dissociated
US8048766B2 (en) 2003-06-24 2011-11-01 Commissariat A L'energie Atomique Integrated circuit on high performance chip
US8193069B2 (en) 2003-07-21 2012-06-05 Commissariat A L'energie Atomique Stacked structure and production method thereof
US8309431B2 (en) 2003-10-28 2012-11-13 Commissariat A L'energie Atomique Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
WO2005122243A2 (en) 2004-06-03 2005-12-22 Owens Technology, Inc. Method and apparatus for cleaving brittle materials
JP2008502153A (en) * 2004-06-03 2008-01-24 オウェンス テクノロジー インコーポレイテッド Method and apparatus for cleaving brittle materials
US7422963B2 (en) 2004-06-03 2008-09-09 Owens Technology, Inc. Method for cleaving brittle materials
TWI402150B (en) * 2004-06-03 2013-07-21 Owens Technology Inc Method and apparatus for cleaving brittle materials
EP1782465A4 (en) * 2004-06-03 2007-11-28 Owens Technology Inc Method and apparatus for cleaving brittle materials
EP1782465A2 (en) * 2004-06-03 2007-05-09 Owens Technology, Inc. Method and apparatus for cleaving brittle materials
CN101267920B (en) * 2004-06-03 2010-08-18 欧文斯科技公司 Method for cleaving brittle materials
US20050287768A1 (en) * 2004-06-03 2005-12-29 Owens Technology, Inc. Method and apparatus for cleaving brittle materials
US8142593B2 (en) 2005-08-16 2012-03-27 Commissariat A L'energie Atomique Method of transferring a thin film onto a support
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9640711B2 (en) 2006-09-08 2017-05-02 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9356181B2 (en) 2006-09-08 2016-05-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8778775B2 (en) 2006-12-19 2014-07-15 Commissariat A L'energie Atomique Method for preparing thin GaN layers by implantation and recycling of a starting substrate
US20100176493A1 (en) * 2007-10-23 2010-07-15 Nadia Ben Mohamed Method of splitting a substrate
US8003493B2 (en) 2007-10-23 2011-08-23 S.O.I.Tec Silicon On Insulator Technologies Method of splitting a substrate
US20100289189A1 (en) * 2007-11-02 2010-11-18 President And Fellows Of Harvard College Production of free-standing solid state layers by thermal processing of substrates with a polymer
US8440129B2 (en) 2007-11-02 2013-05-14 President And Fellows Of Harvard College Production of free-standing solid state layers by thermal processing of substrates with a polymer
US7960248B2 (en) 2007-12-17 2011-06-14 Commissariat A L'energie Atomique Method for transfer of a thin layer
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US20090277314A1 (en) * 2008-05-07 2009-11-12 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US11444221B2 (en) 2008-05-07 2022-09-13 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US8252663B2 (en) 2009-06-18 2012-08-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer
US20110053376A1 (en) * 2009-08-25 2011-03-03 Samsung Electronics Co., Ltd. Wafer dividing apparatus and methods
US8506832B2 (en) * 2009-08-25 2013-08-13 Samsung Electronics Co., Ltd. Wafer dividing apparatus and methods
US9102035B2 (en) * 2012-03-12 2015-08-11 MEMC Electronics Materials S.p.A. Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor
US20130237126A1 (en) * 2012-03-12 2013-09-12 Memc Electronic Materials Spa System For Machining Seed Rods For Use In A Chemical Vapor Deposition Polysilicon Reactor
US9399310B2 (en) 2013-06-28 2016-07-26 D. L. Cetrangolo Method for producing thin rock-faced veneers from granitic stone slabs
US9718215B2 (en) 2015-04-15 2017-08-01 Halo Industries, Inc. Capacitive clamping process for cleaving work pieces using crack propagation
CN109866347A (en) * 2019-02-14 2019-06-11 厦门芯光润泽科技有限公司 Silicon carbide crystal bar multi-line cutting method
CN109866347B (en) * 2019-02-14 2021-08-31 厦门芯光润泽科技有限公司 Multi-wire cutting method for silicon carbide crystal bar

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