US4725345A - Method for forming a hard carbon thin film on article and applications thereof - Google Patents

Method for forming a hard carbon thin film on article and applications thereof Download PDF

Info

Publication number
US4725345A
US4725345A US06/853,182 US85318286A US4725345A US 4725345 A US4725345 A US 4725345A US 85318286 A US85318286 A US 85318286A US 4725345 A US4725345 A US 4725345A
Authority
US
United States
Prior art keywords
carbon
article
bond
gas
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US06/853,182
Inventor
Masakatsu Sakamoto
Shuhei Ohta
Shiro Iwakura
Kaoru Yamazaki
Yoichi Yaguchi
Hiroaki Toshima
Tsugio Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trio KK
Kenwood KK
Original Assignee
Kenwood KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8453085A external-priority patent/JPS61244195A/en
Priority claimed from JP8453185A external-priority patent/JPS61244196A/en
Priority claimed from JP8452985A external-priority patent/JPS61244194A/en
Priority claimed from JP12769085A external-priority patent/JPS61285896A/en
Priority claimed from JP19776085A external-priority patent/JPS6259499A/en
Application filed by Kenwood KK filed Critical Kenwood KK
Assigned to TRIO KABUSHIKI KAISHA, 17-5, SHIBUYA 2-CHOME, SHIBUYA-KU, TOKYO, JAPANNAMIKI PRECISION JEWEL CO., LTD., 8-22, SHINDEN 3-CHOME, ADACHI-KU, TOKYO, JAPAN A CORP OF JAPAN reassignment TRIO KABUSHIKI KAISHA, 17-5, SHIBUYA 2-CHOME, SHIBUYA-KU, TOKYO, JAPANNAMIKI PRECISION JEWEL CO., LTD., 8-22, SHINDEN 3-CHOME, ADACHI-KU, TOKYO, JAPAN A CORP OF JAPAN ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: IWAKURA, SHIRO, OHTA, SHUHEI, SAKAMOTO, MASAKATSU, SATO, TSUGIO, TOSHIMA, HIROAKI, YAGUCHI, YOICHI, YAMAZAKI, KAORU
Application granted granted Critical
Publication of US4725345A publication Critical patent/US4725345A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605Carbon
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/003Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/30Self-sustaining carbon mass or layer with impregnant or other layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31678Of metal

Definitions

  • the present invention relates to a method for forming a hard carbon thin film or layer at a low pressure and at relatively low temperatures and applications thereof.
  • a chemical vapor deposition process (plasma CVD) and an ionization deposition process are known as methods of manufacturing a thin diamond film or layer, which has attracted an attention as a new material in recent years, at a low pressure and at relatively low temperatures. It has been confirmed that diamond was formed by these processes. Further, the process using microwave discharge as a plasma generating method has also recently been proposed (Japanese patent unexamined publication No. 110494/1983).
  • hydrocarbon and hydrogen gas are used as a mixture gas, this mixture gas is discharged onto the surface of the heated substrate, and thereby educing diamond from the vapor through decomposition of hydrocarbon.
  • the acoustic diaphragm consisting of a diamond like carbon layer has been proposed as the applied technology.
  • the acoustic diaphragm in which the solid carbon source was formed due to an ion beam deposition process Japanese patent examined publication No. 33237/1980
  • Japanese patent unexamined publication No. 162194/1983 Japanese patent unexamined publication No.
  • diamond produced by those methods has the drawback such that the deposition rate is low. It is considered that this is because since it is a fundamental idea to decompose the hydrocarbon gas such as methane or the like, a vacuum degree decreases and the mean free path is reduced.
  • the sonic velocity, Young's modulus, and rigidity of the acoustic diaphragm proposed hitherto can be certainly improved, there is the drawback such that the peak of high frequency resonance occurs in the case of assembling such acoustic diaphragms to a speaker unit. It is considered that this is because since only diamond is formed, in spite of the improvement of the physical characteristic, a moderate internal loss of the diaphragm itself is not obtained.
  • Another object of the invention is to provide a method for forming a hard carbon layer which is suitable to cover the surface of an acoustic diaphragm.
  • Still another object of the invention is to provide an acoustic diaphragm having a good high frequency characteristic.
  • a method according to the present invention belongs to what is called an ion plating process and relates to a method whereby carbon is heated and evaporated in the vacuum by an electron beam or the like and thereby depositing a hard carbon thin layer on the substrate.
  • this method by use of graphite as a solid carbon source, the carbon vapor is ionized in the relatively high vacuum in the order of 10 -4 Torr by an ionizing electrode (probe) and a filament or by an ionizing electrode (probe). Further, catalystic gas such as the mixture gas of hydrogen and argon is added.
  • the deposited carbon layer is predominantly amorphous carbon of inclusion of hybridized orbital SP 2 bond and hybridized orbital SP 3 bond and crystalline carbon particles of hybridized orbital SP 3 bond dispersed in said amorphous carbon, or an amorphous carbon of inclusion of hybridized orbital SP 2 bond and hybridized orbital SP 3 bond.
  • the deposition rate is smaller than 0.02 ⁇ m/min, the effect of improvement of the high frequency characteristic cannot be obtained.
  • the deposition rate exceeds 0.1 ⁇ m/min, adhesive property with the diaphragm substrate deteriorates. Therefore, it is desirable to set the deposition rate to a value within a range of 0.02 to 0.1 ⁇ m/min.
  • the produced layer was analyzed and their crystalline properties were compared through the electron diffraction.
  • the crystal in the layer formed due to the ion plating process according to the invention coincides with the spacing of diamond.
  • the layer in which amorphous carbon mixedly exists was obtained.
  • the existence of diamond was confirmed by the respective measuring methods such as infrared spectrum, photo-electron spectrum, hardness measurement, and the like.
  • the hard carbon layer can be formed on the substrate at a low pressure and at ordinary temperatures and the thin metal layer made of aluminum or titanium of tens of microns is used as the substrate of the diaphragm, no thermal deformation occurs (at temperatures below 500° C.) and no stress is applied to the whole diaphragm.
  • the adhesive property of the hard carbon layer with the substrate is good and stable, the produced layer of the diaphragm is hardly peeled off and variations in Young's modulus, density, internal loss, and the like are small.
  • the diaphragm forming region in this case is 6.5 times as wide as that by the ion beam process.
  • the material and shape of the substrate, and the like are not limited, so that the following wide applications can be considered.
  • Electronic field--Improvement of the abrasion resistance of the magnetic heads (to record and reproduce the audio signal, video signal, or data signal on and from the recording medium such as magnetic disk, optical disk, magnetic tape, or floppy disk).
  • this hard carbon layer is suitable as a coating layer onto the surface of the diaphragm of the speaker.
  • the quality of the sound which is reproduced by the speaker largely depends on the performance (physical properties) of this diaphragm. It is necessary to satisfy the following conditions as the diaphragm of the speaker. Namely, the light, strong and weak resonance diaphragm is desirable. In terms of the physical properties, it is preferable to use the material having the characteristics of low density, high elasticity, and large internal loss.
  • Diamond has the highest hardness and ridigity on earth and has the excellent physical properties with regard to the Young's modulus, sonic velocity, and the like as compared with the other materials. Therefore, diamond is a favorable diaphragm material.
  • the diaphragm of the speaker even if layer-like diamond could be formed due to the process at ordinary temperatures and at a low pressure, the single diamond body itself would have been broken due to the impact from the outside or the internal stress. Thus, it is difficult to manufacture the speaker diaphragms made of diamond. In terms of the sound quality and performance, there are also problems such that the resonance of the diaphragm occurs because of its high rigidity, and the like.
  • the hard carbon layer formed due to the ion plating process according to the present invention has the feature such that the diamond particles having the SP 3 bond were dispersed in the carbon layer mainly having the hybridized orbital SP 2 bond. Therefore, the specific note at the resonance frequency is suppressed and the generation of unnecessary noise is little and also the rigidity is high. Further, this hard carbon layer can eliminate what is called a "brittleness" such that the layer is broken due to the impact from the outside or the internal stress. Consequently, the diaphragm having the acoustically ideal performance could be formed.
  • the following table shows the comparison of the mechanical characteristics between titanium and the hard carbon layer formed by the invention.
  • FIG. 1 is a diagram showing an apparatus to embody a method for forming a hard carbon layer according to the present invention
  • FIGS. 2 to 6 are diagrams showing dome-shaped diaphragms each of which was coated with a hard carbon layer on the surface;
  • FIGS. 7 to 9 are diagrams showing cone-shaped diaphragms each of which was coated with a hard carbon layer on the surface;
  • FIG. 10 is a diagram showing a structure of a speaker including a composite diaphragm shown in each of FIGS. 7 to 9;
  • FIG. 11 is a diagram showing dome-shaped diaphragms each of which was formed with an intermediate layer between a base material of a diaphragm and a hard carbon layer.
  • a method for forming a hard carbon layer according to the present invention is accomplished by an apparatus shown in FIG. 1.
  • An article 2 as substrate which is formed with a hard carbon layer on the surface is disposed in a vacuum chamber 1 and the air is exhausted from this chamber to the vacuum pressure of the order of 10 -6 Torr. Thereafter, the argon gas or the mixture gas of hydrogen and argon is introduced into the vacuum chamber 1 so that the gas pressure in the vacuum chamber becomes the order of 10 -4 Torr Graphite 5 in a crucible 4 is evaporated by applying an electron beam 3 onto the graphite 5. At the same time, a DC voltage of 50 V is applied to an ionizing electrode 6 arranged over the crucible 4. In addition, a current of a predetermined amount is also supplied to an electron emitting filament 7 disposed between the crucible 4 and the ionizing electrode 6. The evaporated carbon is ionized in the electric field produced by electrode 6 and becomes a plasma state with the mixture gas.
  • a DC voltage in a range of -100 to -1 kV is applied to the article 2 and a shutter 8 is opened to form a layer onto the article 2 serving as a base material. It is desirable to set the deposition rate to a value within a range of 0.02 to 0.1 ⁇ m/min.
  • the layer on the article 2 formed in this manner was evaluated. The hardness of Hv 3000 to 4000 was obtained and it has been confirmed through electron diffraction and ESCA spectrum that the SP 3 diamond bond was formed. On the other hand, no hydrogen was detected in the layer.
  • the preparation like cleaning on the surface of the article 2 is conducted before the evaporating step of the graphite.
  • Argon gas or mixture gas of Argon and hydrogen of the order of 10 -2 Torr is introduced into the chamber 1.
  • DC voltage of several hundred voltages is applied onto the article 2 to bombard the surface of the article 2 with ionized argon.
  • This preparation is useful for better deposition characteristics of carbon on the surface of the article 2.
  • the argon gas is drained from the chamber 1.
  • the hard carbon layer consisting of amorphous carbon of inclusion of hybridized orbital SP 2 bond and hybridized orbital SP 3 bond and crystal grains or particles of the hybridized orbital SP 3 bond dispersed in the amorphous carbon, or the hard carbon layer of amorphous carbon of the SP 2 bond and SP 3 bond.
  • a base material 21 of a dome-shaped acoustic diaphragm made of titanium having the thickness of 20 ⁇ m as shown in FIG. 2 is disposed in the vaccum chamber and the inside pressure is reduced to 10 -6 Torr. Thereafter, as preparation step, ions are irradiated by applying a DC voltage of hundreds of volts in the mixture gas atmosphere of Ar+H 2 at the pressure of 10 -2 Torr. And the aforementioned ion plating process is conducted.
  • a hard carbon layer 22 obtained by this ion plating method was analyzed by the electron diffraction or ESCA method.
  • the fine crystalline grains (crystalline particles of the diamond structure) of the SP 3 bond were dispersed in the amorphous layer of the hybridized orbital SP 2 bond and hybridized orbital SP 3 bond, or that an amorphous carbon of the SP 2 bond and SP 3 bond was formed.
  • the sonic velocity of the whole diaphragm formed with the hard carbon layer of 0.3 ⁇ m was within a range of 9,000 to 12,000 m/sec.
  • hard carbon layers 32 each having the thickness of 0.3 ⁇ m are formed onto both surfaces of an acoustic diaphragm base material 31 made of titanium of the thickness of 20 ⁇ m which is constituted by integrally forming a voice coil bobbin portion and a dome portion.
  • a voice coil is wound around the voice coil bobbin portion of the integrated type diaphragm.
  • a hard carbon layer 42 is formed by way of the ion plating process onto a base material 41 of a dome-shaped ⁇ type SiC ceramic diaphragm obtained due to the CVD process.
  • the ⁇ type SiC diaphragm base material 41 is disposed in the vacuum chamber and the inside pressure is reduced to 10 -6 Torr.
  • ions are irradiated in the mixture gas atmosphere of Ar+H 2 at the vacuum pressure of 10 -2 Torr by applying the DC voltage of hundreds of volts.
  • the hard carbon layer obtained by the ion plating process was analyzed by the electron diffraction or ESCA method.
  • the fine crystalline grains of the SP 3 bond (crystalline particles of the diamond structure) were included in the amorphous carbon layer of the hybridized orbital SP 2 bond and hybridized orbital SP 3 bond.
  • This layer is extremely hard and can be used as a surface layer of the diaphragm.
  • the ion deposition rate was 200 ⁇ /min and extremely high, so that an excellent mass productivity is obtained.
  • the ceramic diaphragm base material TiC, B 4 C, and the like are useful.
  • hard carbon layers 52 are formed onto both surfaces of a diaphragm base material 51.
  • the characteristics of this layer were measured. Thus, it has been found that the young's modulus and sonic velocity were further improved.
  • the diaphragm obtained in the application 4 or 5 was assembled to a tweeter unit and its frequency characteristics were measured. Thus, it has been found that the reproducible high frequency range was extended, the flat frequency response was obtained, and the harmonic distortion was reduced.
  • hard carbon layers 62 are formed onto both surfaces of a ⁇ type SiC ceramic diaphragm base material 61 in which a voice coil bobbin portion and a dome portion are integrally formed.
  • a voice coil is wound around the voice coil bobbin portion of this integrated type diaphragm and a tweeter unit is constituted. The characteristics of this tweeter unit were measured. Thus, it has been found that the reproducible limit frequency in the high frequency range was further extended and the reproduced sound with less distortion until a super high frequency was derived.
  • an FRP (fiber reinforced plastic) diaphragm is used as a base material which is formed with a hard carbon layer.
  • the FRP diaphragm base material is obtained by using PEEK (polyether ether ketone) as a matrix resin and an SiC inorganic fiber as a heat-resisting reinforced fiber.
  • PEEK polyether ether ketone
  • SiC inorganic fiber as a heat-resisting reinforced fiber.
  • Such an FRP diaphragm base material 71 can be easily produced due to a molding process such as heating press, injection, compression, or the like.
  • the heat-resisting temperature of the diaphragm base material 71 was about 350° C.
  • a hard carbon layer 72 of 0.3 ⁇ m is formed onto the FRP diaphragm base material 71 due to the ion plating process.
  • the FRP diaphragm base material 71 is disposed in the vacuum chamber and the inside pressure is reduced to 10 -6 Torr Thereafter, ions are irradiated in the mixture gas atmosphere of Ar+H 2 at the pressure of 10 -2 Torr by applying the DC voltage of hundreds of volts.
  • the evaporation rate of graphite was 0.25 g/min and the deposition rate of the hard carbon layer was 0.02 ⁇ m/min.
  • the temperature in the vacuum chamber was within a range of room temperature to about 250° C.; therefore, the FRP diaphragm base material serving as the material to be coated could sufficiently endure this temperature.
  • the hard carbon layer obtained by this ion plating process was analyzed due to the electron diffraction or ESCA method.
  • the fine crystal grains of the SP 3 bond (crystal particles of the diamond structure) were included in the amorphous carbon layer in which the hybridized orbital SP 2 bond and hybridized orbital SP 3 bond mixedly existed.
  • the sonic velocity of the whole diaphragm was within a range of 5,000 to 6,000 m/sec and was further improved as compared with the sonic velocity of 3,500 m/sec of the diaphragm formed of only FRP.
  • a polyimide resin or the like may be used as the heat-resisting resin.
  • An Al 2 O 3 (alumina) fiber or the like may be used as the heat-resisting fiber.
  • a hard carbon layer is formed onto an FRM (fiber reinforced metal) diaphragm base material due to a hot press process using aluminium or aluminium alloy as the matrix and SiC as the heat-resisting reinforced fiber.
  • the propagation velocity of this FRM diaphragm base material itself was within a range of 6,000 to 6,500 m/sec.
  • a hard carbon layer 82 is formed onto the surface of such an FRM diaphragm base material 83 in a manner similar to the application 6.
  • the propagation velocity of the whole diaphragm was within a range of 8,000 to 9,000 m/sec and the propagation velocity was remarkably improved.
  • an FRM multi-layer diaphragm base material using a metal aluminium or aluminium alloy honeycomb 94 as a core material and having Al/SiC layers 95 on both front and back surfaces is obtained.
  • a hard carbon layer 92 is formed on the surface of this base material in a manner similar to the application 6. In this case as well, the Young's modulus and sonic velocity of the whole diaphragm were also remarkably improved.
  • FIG. 10 is a cross sectional view showing the state in which a diaphragm 106 obtained by application 6 was assembled in a speaker unit.
  • reference numerals 107 denotes a cap; 108 is a frame; 109 a damping spider; 110 a magnetic circuit; and 111 a voice coil.
  • the characteristics of the speaker unit constituted as described above were measured. Thus, it has been found that the reproducible high frequency range was extended, the flat frequency response was obtained, and the harmonic distortion was reduced.
  • the diaphragm base material consisting of the heat-resisting resin and heat-resisting reinforced fiber or consisting of the metal and heat-resisting reinforced fiber is obtained, or the composite diaphragm base material of such a diaphragm base material is obtained; then the hard carbon layer consisting of the amorphous layer in which the hybridized orbital SP 2 bond and hybridized orbital SP 3 bond mixedly exist and the crystal particles of the hybridized orbital SP 3 bond, or the amorphous hard carbon layer in which the above SP 2 bond and SP 3 bond mixedly exist is formed onto at least one of both front and back surfaces of the foregoing diaphragm base material or composite diaphragm base material due to the ion plating process.
  • the acoustic characteristics of the whole diaphragm particularly, the sonic velocity, Young's modulus, rigidity, etc. are improved.
  • the reproducible high frequency range is extended and flattened.
  • the harmonic distortion can be reduced.
  • the hard carbon layer is formed due to the ion plating process, so that the ion deposition rate is high and the method of this invention is very economical and has an extremely high industrial advantage as compared with the other process.
  • An acoustic diaphragm of FIG. 11 is obtained in the following manner. Namely, a middle or intermediate thin layer consisting of a single body of titanium compound such as titanium carbide, titanium nitride, or the like, or a mixture body thereof, or silicon carbide, or silicon nitride is formed onto at least one of front and back surfaces of the titanium diaphragm base material by the ion plating process. Further, the hard carbon thin layer is formed on the middle thin layer due to the ion plating process.
  • a middle thin layer 113 made of titanium carbide is formed on the surface of a titanium diaphragm base material 112 by the ion plating process.
  • the base material 112 of the thickness of 20 ⁇ m is cleaned and the pressure in the vacuum chamber is reduced to 10 -6 Torr.
  • argon ions are irradiated in the argon gas atmosphere (at the pressure of 10 -2 Torr) by applying the DC voltage in a range of hundreds volts to one kilovolt.
  • intermediate layer material gas of the CH 4 gas is introduced into the vacuum chamber at the vacuum degree of 10 -4 Torr and titanium Ti serving as an intermediate layer material solid source is ionized by an electron beam as plasma.
  • vaporized Ti in the plasma reacts to C produced by decomposing CH 4 to produce TiC and this TiC is deposited onto the titanium diaphragm base material 112, so that the intermediate thin layer 113 is formed.
  • the hard carbon thin layer was formed onto the middle thin layer in the following manner.
  • the carbon source (graphite) in the crucible is evaporated using an electron beam.
  • the electron emitting filament is arranged over the crucible and the ionizing electrode is disposed over this filament.
  • the DC voltage of 50 V is applied to the ionizing electrode and a predetermined voltage is also applied to the electron emitting filament, thereby ionizing evaporated carbon.
  • the carbon layer is formed onto the composite layer consisting of a titanium diaphragm base material 122 and a middle thin layer 113, thereby obtaining a hard carbon thin layer 114 as shown in FIG. 11.
  • the hard carbon thin layer 114 obtained in this manner was evaluated. Thus, it has been found due to the electron diffraction and ESCA spectrum that the hardness was within a range of HV 3,000 to 4,000 and the diamond particles having the hybridized orbital SP 3 bond were dispersed in the carbon layer mainly having the hybridized orbital SP 2 bond.
  • the sonic velocity of a diaphragm 111 obtained as described above was within a range of 12,000 to 13,000 m/sec and the producible high frequency range was extended and the hardness of the surface was increased.
  • the internal loss tan ⁇ was 0.01 or more.
  • the middle thin layer is formed on the surface of the titanium diaphragm base material and the hard carbon thin layer in which the diamond particles having the hybridized orbital SP 3 bond were dispersed in the carbon layer mainly having the hybridized orbital SP 2 bond is formed on the surface of the middle thin layer.
  • the internal loss can be increased as compared with the acoustic diaphragm previously proposed by the same applicant (Japanese patent unexamined publication No. 84529/1985). Either one of the above-mentioned diaphragms can be selectively used in accordance with the application.
  • TiC titanium carbide
  • TiN titanium nitride
  • the middle thin layer 113 consisting of the mixture material of titanium carbide and titanium nitride can be simultaneously formed. In this case, the physical properties of the resultant mixture material are good.
  • silicon carbide has the diamond type covalent bond structure, it has a high hardness and is suitable as the middle thin layer.
  • Boron nitride (BN) and cubic boron nitride (CBN) also have the good physical properties.
  • cubic boron nitride has the Knoop hardness of 4700 kg/mm 2 and is proper as a material having the excellent hardness.
  • the process of forming the hard thin multi-layers namely, the middle thin layer and the hard carbon thin layer formed thereof due to the ion plating process
  • a desired diaphragm can be obtained in one batch, so that the excellent mass productivity can be obtained.
  • this ion plating process has the features such that the ionizing efficiency is high and the deposition rate is also high, so that it is extremely economical and the reliability is also high since the hard thin layer having the good adhesive property can be obtained.

Abstract

A method of forming diamond-like carbon layer which is advantageously adaptable as a coating layer on acoustic diaphragms. In the method, carbon vaporized out of solid carbon source is deposited onto the surface of the diaphragm as the coating layer in the atmosphere of catalystic gas, for instance, H2 +Ar or H2 of about 10-4 Torr. The deposited carbon layer on the surface of the diaphragm is an amorphous carbon of inclusion of hybridized orbital SP2 bond and hybridized orbital SP3 bond and crystalline carbon particles of hybridized orbital SP3 bond dispersed in the amorphous carbon, or an amorphous carbon of inclusion of hybridized orbital SP2 bond and hybridized orbital SP3 bond.

Description

FIELD OF THE INVENTION AND RELATED ART
The present invention relates to a method for forming a hard carbon thin film or layer at a low pressure and at relatively low temperatures and applications thereof.
A chemical vapor deposition process (plasma CVD) and an ionization deposition process are known as methods of manufacturing a thin diamond film or layer, which has attracted an attention as a new material in recent years, at a low pressure and at relatively low temperatures. It has been confirmed that diamond was formed by these processes. Further, the process using microwave discharge as a plasma generating method has also recently been proposed (Japanese patent unexamined publication No. 110494/1983).
According to those forming processes, hydrocarbon and hydrogen gas are used as a mixture gas, this mixture gas is discharged onto the surface of the heated substrate, and thereby educing diamond from the vapor through decomposition of hydrocarbon. The acoustic diaphragm consisting of a diamond like carbon layer has been proposed as the applied technology. There have been proposed the acoustic diaphragm in which the solid carbon source was formed due to an ion beam deposition process (Japanese patent examined publication No. 33237/1980) and the acoustic diaphragm which was formed by an amorphous carbon eduction layer containing hydrogen due to thermal decomposition of hydrocarbon (Japanese patent unexamined publication No. 162194/1983).
However, diamond produced by those methods has the drawback such that the deposition rate is low. It is considered that this is because since it is a fundamental idea to decompose the hydrocarbon gas such as methane or the like, a vacuum degree decreases and the mean free path is reduced. In addition, although the sonic velocity, Young's modulus, and rigidity of the acoustic diaphragm proposed hitherto can be certainly improved, there is the drawback such that the peak of high frequency resonance occurs in the case of assembling such acoustic diaphragms to a speaker unit. It is considered that this is because since only diamond is formed, in spite of the improvement of the physical characteristic, a moderate internal loss of the diaphragm itself is not obtained.
OBJECT AND SUMMARY OF THE INVENTION
It is an object of the present invention to provide a method for forming a hard carbon layer in which the forming speed is improved.
Another object of the invention is to provide a method for forming a hard carbon layer which is suitable to cover the surface of an acoustic diaphragm.
Still another object of the invention is to provide an acoustic diaphragm having a good high frequency characteristic.
A method according to the present invention belongs to what is called an ion plating process and relates to a method whereby carbon is heated and evaporated in the vacuum by an electron beam or the like and thereby depositing a hard carbon thin layer on the substrate. In this method, by use of graphite as a solid carbon source, the carbon vapor is ionized in the relatively high vacuum in the order of 10-4 Torr by an ionizing electrode (probe) and a filament or by an ionizing electrode (probe). Further, catalystic gas such as the mixture gas of hydrogen and argon is added. In this way, the deposited carbon layer is predominantly amorphous carbon of inclusion of hybridized orbital SP2 bond and hybridized orbital SP3 bond and crystalline carbon particles of hybridized orbital SP3 bond dispersed in said amorphous carbon, or an amorphous carbon of inclusion of hybridized orbital SP2 bond and hybridized orbital SP3 bond. When the deposition rate is smaller than 0.02 μm/min, the effect of improvement of the high frequency characteristic cannot be obtained. On one hand, when the deposition rate exceeds 0.1 μm/min, adhesive property with the diaphragm substrate deteriorates. Therefore, it is desirable to set the deposition rate to a value within a range of 0.02 to 0.1 μm/min.
Since diamond and graphite are the allotrope of carbon, the produced layer was analyzed and their crystalline properties were compared through the electron diffraction. Thus, it has been found that the crystal in the layer formed due to the ion plating process according to the invention coincides with the spacing of diamond. Also, the layer in which amorphous carbon mixedly exists was obtained. The existence of diamond was confirmed by the respective measuring methods such as infrared spectrum, photo-electron spectrum, hardness measurement, and the like.
______________________________________                                    
PLANE-SPACING                                                             
               A hard carbon layer formed                                 
Diamond (ASTM-675)                                                        
               by the invention                                           
       Plane-spacing                                                      
                   Plane-spacing                                          
                               Difference of                              
hkl    (Å)     (Å)     plane-spacing (%)                          
______________________________________                                    
111    2.06        2.06        0                                          
220    1.261       1.21        4.04                                       
311    1.0754      --          --                                         
400    0.8916      --          --                                         
331    0.8182       0.807      1.37                                       
______________________________________                                    
Advantages of the method for forming a hard carbon layer according to the present invention will be summarized as follows.
1. Since the hard carbon layer can be formed on the substrate at a low pressure and at ordinary temperatures and the thin metal layer made of aluminum or titanium of tens of microns is used as the substrate of the diaphragm, no thermal deformation occurs (at temperatures below 500° C.) and no stress is applied to the whole diaphragm.
2. Since the adhesive property of the hard carbon layer with the substrate is good and stable, the produced layer of the diaphragm is hardly peeled off and variations in Young's modulus, density, internal loss, and the like are small.
3. Since the deposition rate of the hard carbon layer is triple as high as that by the ion beam process, an excellent mass productivity is obtained.
4. Since the hard carbon layer is formed in a wide region, a number of diaphragms can be produced by a single deposition. Thus, an excellent mass productivity is obtained. The diaphragm forming region in this case is 6.5 times as wide as that by the ion beam process.
5. Since the evaporated particles are widely dispersed and the layer is uniformly deposited onto the diaphragm and the thickness of layer can precisely controlled, an excellent mass productivity is derived.
According to the method for forming the hard carbon layer of the invention, the material and shape of the substrate, and the like are not limited, so that the following wide applications can be considered.
1. The rigidity, hardness and abrasion resistance are high. Therefore, the following applications can be mentioned.
Acoustic field--Improvement of the rigidity of the diaphragm, tone arm, or cantilever.
Electronic field--Improvement of the abrasion resistance of the magnetic heads (to record and reproduce the audio signal, video signal, or data signal on and from the recording medium such as magnetic disk, optical disk, magnetic tape, or floppy disk).
Mechanical field--Improvement of the hardness of various kinds of bearings, cutting tools (bites), cutters, etc.
2. The weatherability is excellent. Therefore, the following applications can be mentioned.
Optical field--Protection of the lens.
Overall field--Improvement of the corrosion resistance of the precision parts and external appearance decoration parts.
3. The transmission factor of the infrared rays is excellent. Therefore, the following applications can be mentioned.
Optical field--Applications to the infrared transmissive window and nonreflective parts.
4. The electrical insulation property and thermal conductivity are excellent and the thermal expansion coefficient is low. Therefore, the following applications can be mentioned.
Electric and electronic fields--Improvement of the heat radiation property and insulation of various kinds of heat sinks. Applications to the electronic parts such as semiconductors and the like.
Particularly, as a typical application of the hard carbon layer which is formed by the method according to the invention, this hard carbon layer is suitable as a coating layer onto the surface of the diaphragm of the speaker. The quality of the sound which is reproduced by the speaker largely depends on the performance (physical properties) of this diaphragm. It is necessary to satisfy the following conditions as the diaphragm of the speaker. Namely, the light, strong and weak resonance diaphragm is desirable. In terms of the physical properties, it is preferable to use the material having the characteristics of low density, high elasticity, and large internal loss.
Diamond has the highest hardness and ridigity on earth and has the excellent physical properties with regard to the Young's modulus, sonic velocity, and the like as compared with the other materials. Therefore, diamond is a favorable diaphragm material. When considering the diaphragm of the speaker, even if layer-like diamond could be formed due to the process at ordinary temperatures and at a low pressure, the single diamond body itself would have been broken due to the impact from the outside or the internal stress. Thus, it is difficult to manufacture the speaker diaphragms made of diamond. In terms of the sound quality and performance, there are also problems such that the resonance of the diaphragm occurs because of its high rigidity, and the like.
However, the hard carbon layer formed due to the ion plating process according to the present invention has the feature such that the diamond particles having the SP3 bond were dispersed in the carbon layer mainly having the hybridized orbital SP2 bond. Therefore, the specific note at the resonance frequency is suppressed and the generation of unnecessary noise is little and also the rigidity is high. Further, this hard carbon layer can eliminate what is called a "brittleness" such that the layer is broken due to the impact from the outside or the internal stress. Consequently, the diaphragm having the acoustically ideal performance could be formed. The following table shows the comparison of the mechanical characteristics between titanium and the hard carbon layer formed by the invention.
______________________________________                                    
              Propaga-   Specific                                         
Young's       tion       modules of                                       
                                   Internal                               
modulus       velocity   elasticity                                       
                                   loss                                   
dyne/cm.sup.2 m/sec      cm.sup.2 /sec.sup.2                              
                                   tan δ                            
______________________________________                                    
Titanium                                                                  
        1.1 × 10.sup.12                                             
                  4,948      25 × 10.sup.10                         
                                     0.014                                
Hard    3.1 × 10.sup.12                                             
                  8,350      70 × 10.sup.10                         
                                     0.026                                
carbon                                                                    
layer                                                                     
formed by                                                                 
the                                                                       
invention                                                                 
______________________________________                                    
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a diagram showing an apparatus to embody a method for forming a hard carbon layer according to the present invention;
FIGS. 2 to 6 are diagrams showing dome-shaped diaphragms each of which was coated with a hard carbon layer on the surface;
FIGS. 7 to 9 are diagrams showing cone-shaped diaphragms each of which was coated with a hard carbon layer on the surface;
FIG. 10 is a diagram showing a structure of a speaker including a composite diaphragm shown in each of FIGS. 7 to 9; and
FIG. 11 is a diagram showing dome-shaped diaphragms each of which was formed with an intermediate layer between a base material of a diaphragm and a hard carbon layer.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
A method for forming a hard carbon layer according to the present invention is accomplished by an apparatus shown in FIG. 1.
An article 2 as substrate which is formed with a hard carbon layer on the surface is disposed in a vacuum chamber 1 and the air is exhausted from this chamber to the vacuum pressure of the order of 10-6 Torr. Thereafter, the argon gas or the mixture gas of hydrogen and argon is introduced into the vacuum chamber 1 so that the gas pressure in the vacuum chamber becomes the order of 10-4 Torr Graphite 5 in a crucible 4 is evaporated by applying an electron beam 3 onto the graphite 5. At the same time, a DC voltage of 50 V is applied to an ionizing electrode 6 arranged over the crucible 4. In addition, a current of a predetermined amount is also supplied to an electron emitting filament 7 disposed between the crucible 4 and the ionizing electrode 6. The evaporated carbon is ionized in the electric field produced by electrode 6 and becomes a plasma state with the mixture gas.
A DC voltage in a range of -100 to -1 kV is applied to the article 2 and a shutter 8 is opened to form a layer onto the article 2 serving as a base material. It is desirable to set the deposition rate to a value within a range of 0.02 to 0.1 μm/min. The layer on the article 2 formed in this manner was evaluated. The hardness of Hv 3000 to 4000 was obtained and it has been confirmed through electron diffraction and ESCA spectrum that the SP3 diamond bond was formed. On the other hand, no hydrogen was detected in the layer.
In the above process, the preparation like cleaning on the surface of the article 2 is conducted before the evaporating step of the graphite. After arranging the article 2 and evacuating the chamber 1, Argon gas or mixture gas of Argon and hydrogen of the order of 10-2 Torr is introduced into the chamber 1. DC voltage of several hundred voltages is applied onto the article 2 to bombard the surface of the article 2 with ionized argon. This preparation is useful for better deposition characteristics of carbon on the surface of the article 2. After the ion bombard as preparation, the argon gas is drained from the chamber 1.
According to the method of the invention, it has been found that the hard carbon layer consisting of amorphous carbon of inclusion of hybridized orbital SP2 bond and hybridized orbital SP3 bond and crystal grains or particles of the hybridized orbital SP3 bond dispersed in the amorphous carbon, or the hard carbon layer of amorphous carbon of the SP2 bond and SP3 bond.
According to this method, since graphite as a solid carbon source is used, it can be ionized in a relatively high vacuum condition in the order of 10-4 Torr and the layer can be manufactured in the atmosphere added with hydrogen. Therefore, the deposition rate can be improved and the particles having the SP3 bond can be dispersed in the carbon layer mainly having the SP2 bond. Thus, a moderate internal loss can be presented to the layer. In the case of applying the hard carbon layer formed by the invention to the diaphragm of the speaker, the occurrence of the high frequency resonance could be prevented.
Application 1
A base material 21 of a dome-shaped acoustic diaphragm made of titanium having the thickness of 20 μm as shown in FIG. 2 is disposed in the vaccum chamber and the inside pressure is reduced to 10-6 Torr. Thereafter, as preparation step, ions are irradiated by applying a DC voltage of hundreds of volts in the mixture gas atmosphere of Ar+H2 at the pressure of 10-2 Torr. And the aforementioned ion plating process is conducted.
In the case of this ion plating process, at the vacuum degree of 10-4 Torr (mixture gas of Ar+H2), the evaporation rate of graphite was 0.25 g/min and the deposition rate of the hard carbon layer was 0.02 μm/min.
A hard carbon layer 22 obtained by this ion plating method was analyzed by the electron diffraction or ESCA method. Thus, it has been confirmed that the fine crystalline grains (crystalline particles of the diamond structure) of the SP3 bond were dispersed in the amorphous layer of the hybridized orbital SP2 bond and hybridized orbital SP3 bond, or that an amorphous carbon of the SP2 bond and SP3 bond was formed.
The sonic velocity of the whole diaphragm formed with the hard carbon layer of 0.3 μm was within a range of 9,000 to 12,000 m/sec.
Application 2
As shown in FIG. 3, hard carbon layers 32 each having the thickness of 0.3 μm are formed onto both surfaces of an acoustic diaphragm base material 31 made of titanium of the thickness of 20 μm which is constituted by integrally forming a voice coil bobbin portion and a dome portion. A voice coil is wound around the voice coil bobbin portion of the integrated type diaphragm. The characteristics of the tweeter unit having a free edge were measured. Thus, it has been found that the high frequency characteristic was improved, namely, the reproducible limit frequency in the high frequency range was extended. The reproduced sound with less distortion until a super high frequency could be obtained.
Application 3
A hard carbon layer 42 is formed by way of the ion plating process onto a base material 41 of a dome-shaped β type SiC ceramic diaphragm obtained due to the CVD process. In this process, the β type SiC diaphragm base material 41 is disposed in the vacuum chamber and the inside pressure is reduced to 10-6 Torr. Thereafter, as preparation step, ions are irradiated in the mixture gas atmosphere of Ar+H2 at the vacuum pressure of 10-2 Torr by applying the DC voltage of hundreds of volts.
In the case of this ion plating process, at the vacuum degree of 10-4 Torr (with the mixture gas of Ar+H2), the evaporation rate of graphite was 0.25 g/min and the deposition rate of the hard carbon layer was 0.02 μm/min.
The hard carbon layer obtained by the ion plating process was analyzed by the electron diffraction or ESCA method. Thus, it has been found that the fine crystalline grains of the SP3 bond (crystalline particles of the diamond structure) were included in the amorphous carbon layer of the hybridized orbital SP2 bond and hybridized orbital SP3 bond. This layer is extremely hard and can be used as a surface layer of the diaphragm.
According to this ion plating process, on one hand, the ion deposition rate was 200 Å/min and extremely high, so that an excellent mass productivity is obtained. As the ceramic diaphragm base material, TiC, B4 C, and the like are useful.
Application 4
As shown in FIG. 5, hard carbon layers 52 are formed onto both surfaces of a diaphragm base material 51. The characteristics of this layer were measured. Thus, it has been found that the young's modulus and sonic velocity were further improved.
The diaphragm obtained in the application 4 or 5 was assembled to a tweeter unit and its frequency characteristics were measured. Thus, it has been found that the reproducible high frequency range was extended, the flat frequency response was obtained, and the harmonic distortion was reduced.
Application 5
As shown in FIG. 6, hard carbon layers 62 are formed onto both surfaces of a β type SiC ceramic diaphragm base material 61 in which a voice coil bobbin portion and a dome portion are integrally formed. A voice coil is wound around the voice coil bobbin portion of this integrated type diaphragm and a tweeter unit is constituted. The characteristics of this tweeter unit were measured. Thus, it has been found that the reproducible limit frequency in the high frequency range was further extended and the reproduced sound with less distortion until a super high frequency was derived.
Application 6
As shown in FIG. 7, an FRP (fiber reinforced plastic) diaphragm is used as a base material which is formed with a hard carbon layer. The FRP diaphragm base material is obtained by using PEEK (polyether ether ketone) as a matrix resin and an SiC inorganic fiber as a heat-resisting reinforced fiber. Such an FRP diaphragm base material 71 can be easily produced due to a molding process such as heating press, injection, compression, or the like. The heat-resisting temperature of the diaphragm base material 71 was about 350° C.
A hard carbon layer 72 of 0.3 μm is formed onto the FRP diaphragm base material 71 due to the ion plating process.
In this ion plating process, the FRP diaphragm base material 71 is disposed in the vacuum chamber and the inside pressure is reduced to 10-6 Torr Thereafter, ions are irradiated in the mixture gas atmosphere of Ar+H2 at the pressure of 10-2 Torr by applying the DC voltage of hundreds of volts. In the case of this ion plating process, at the vacuum degree of 10-4 Torr (with the mixture gas of Ar+H2), the evaporation rate of graphite was 0.25 g/min and the deposition rate of the hard carbon layer was 0.02 μm/min. The temperature in the vacuum chamber was within a range of room temperature to about 250° C.; therefore, the FRP diaphragm base material serving as the material to be coated could sufficiently endure this temperature.
The hard carbon layer obtained by this ion plating process was analyzed due to the electron diffraction or ESCA method. Thus, it has been found that the fine crystal grains of the SP3 bond (crystal particles of the diamond structure) were included in the amorphous carbon layer in which the hybridized orbital SP2 bond and hybridized orbital SP3 bond mixedly existed.
As the result of the measurement, it has been found that the sonic velocity of the whole diaphragm was within a range of 5,000 to 6,000 m/sec and was further improved as compared with the sonic velocity of 3,500 m/sec of the diaphragm formed of only FRP.
A polyimide resin or the like may be used as the heat-resisting resin. An Al2 O3 (alumina) fiber or the like may be used as the heat-resisting fiber.
Application 7
A hard carbon layer is formed onto an FRM (fiber reinforced metal) diaphragm base material due to a hot press process using aluminium or aluminium alloy as the matrix and SiC as the heat-resisting reinforced fiber. The propagation velocity of this FRM diaphragm base material itself was within a range of 6,000 to 6,500 m/sec.
As shown in FIG. 8, a hard carbon layer 82 is formed onto the surface of such an FRM diaphragm base material 83 in a manner similar to the application 6. In this case, the propagation velocity of the whole diaphragm was within a range of 8,000 to 9,000 m/sec and the propagation velocity was remarkably improved.
Application 8
As shown in FIG. 9, an FRM multi-layer diaphragm base material using a metal aluminium or aluminium alloy honeycomb 94 as a core material and having Al/SiC layers 95 on both front and back surfaces is obtained. A hard carbon layer 92 is formed on the surface of this base material in a manner similar to the application 6. In this case as well, the Young's modulus and sonic velocity of the whole diaphragm were also remarkably improved.
FIG. 10 is a cross sectional view showing the state in which a diaphragm 106 obtained by application 6 was assembled in a speaker unit. In the diagram, reference numerals 107 denotes a cap; 108 is a frame; 109 a damping spider; 110 a magnetic circuit; and 111 a voice coil. The characteristics of the speaker unit constituted as described above were measured. Thus, it has been found that the reproducible high frequency range was extended, the flat frequency response was obtained, and the harmonic distortion was reduced.
According to the acoustic composite diaphragms of the applications 6 to 7, the diaphragm base material consisting of the heat-resisting resin and heat-resisting reinforced fiber or consisting of the metal and heat-resisting reinforced fiber is obtained, or the composite diaphragm base material of such a diaphragm base material is obtained; then the hard carbon layer consisting of the amorphous layer in which the hybridized orbital SP2 bond and hybridized orbital SP3 bond mixedly exist and the crystal particles of the hybridized orbital SP3 bond, or the amorphous hard carbon layer in which the above SP2 bond and SP3 bond mixedly exist is formed onto at least one of both front and back surfaces of the foregoing diaphragm base material or composite diaphragm base material due to the ion plating process. Therefore, the acoustic characteristics of the whole diaphragm, particularly, the sonic velocity, Young's modulus, rigidity, etc. are improved. The reproducible high frequency range is extended and flattened. The harmonic distortion can be reduced. On one hand, the hard carbon layer is formed due to the ion plating process, so that the ion deposition rate is high and the method of this invention is very economical and has an extremely high industrial advantage as compared with the other process.
Application 9
An acoustic diaphragm of FIG. 11 is obtained in the following manner. Namely, a middle or intermediate thin layer consisting of a single body of titanium compound such as titanium carbide, titanium nitride, or the like, or a mixture body thereof, or silicon carbide, or silicon nitride is formed onto at least one of front and back surfaces of the titanium diaphragm base material by the ion plating process. Further, the hard carbon thin layer is formed on the middle thin layer due to the ion plating process.
A middle thin layer 113 made of titanium carbide is formed on the surface of a titanium diaphragm base material 112 by the ion plating process. In this case, the base material 112 of the thickness of 20 μm is cleaned and the pressure in the vacuum chamber is reduced to 10-6 Torr. Thereafter, argon ions are irradiated in the argon gas atmosphere (at the pressure of 10-2 Torr) by applying the DC voltage in a range of hundreds volts to one kilovolt. At this time, intermediate layer material gas of the CH4 gas is introduced into the vacuum chamber at the vacuum degree of 10-4 Torr and titanium Ti serving as an intermediate layer material solid source is ionized by an electron beam as plasma. Thus, vaporized Ti in the plasma reacts to C produced by decomposing CH4 to produce TiC and this TiC is deposited onto the titanium diaphragm base material 112, so that the intermediate thin layer 113 is formed. The hard carbon thin layer was formed onto the middle thin layer in the following manner.
The carbon source (graphite) in the crucible is evaporated using an electron beam.
The electron emitting filament is arranged over the crucible and the ionizing electrode is disposed over this filament. The DC voltage of 50 V is applied to the ionizing electrode and a predetermined voltage is also applied to the electron emitting filament, thereby ionizing evaporated carbon.
Thereafter, the mixture gas of H2 +Ar is introduced into the vacuum chamber. The carbon layer is formed onto the composite layer consisting of a titanium diaphragm base material 122 and a middle thin layer 113, thereby obtaining a hard carbon thin layer 114 as shown in FIG. 11.
The hard carbon thin layer 114 obtained in this manner was evaluated. Thus, it has been found due to the electron diffraction and ESCA spectrum that the hardness was within a range of HV 3,000 to 4,000 and the diamond particles having the hybridized orbital SP3 bond were dispersed in the carbon layer mainly having the hybridized orbital SP2 bond.
The sonic velocity of a diaphragm 111 obtained as described above was within a range of 12,000 to 13,000 m/sec and the producible high frequency range was extended and the hardness of the surface was increased. On one hand, the internal loss tan δ was 0.01 or more.
As described above, the middle thin layer is formed on the surface of the titanium diaphragm base material and the hard carbon thin layer in which the diamond particles having the hybridized orbital SP3 bond were dispersed in the carbon layer mainly having the hybridized orbital SP2 bond is formed on the surface of the middle thin layer. Thus, the internal loss can be increased as compared with the acoustic diaphragm previously proposed by the same applicant (Japanese patent unexamined publication No. 84529/1985). Either one of the above-mentioned diaphragms can be selectively used in accordance with the application.
In the applications 10, in addition to titanium carbide (TiC), another titanium compound such as titanium nitride (TiN) or the like may be used as the middle layer. On the other hand, by use of the mixture gas of CH4 +N2 as the discharge gas, the middle thin layer 113 consisting of the mixture material of titanium carbide and titanium nitride can be simultaneously formed. In this case, the physical properties of the resultant mixture material are good.
Further, since silicon carbide (SiC) has the diamond type covalent bond structure, it has a high hardness and is suitable as the middle thin layer.
Boron nitride (BN) and cubic boron nitride (CBN) also have the good physical properties. Particularly, cubic boron nitride has the Knoop hardness of 4700 kg/mm2 and is proper as a material having the excellent hardness.
In the process of forming the hard thin multi-layers, namely, the middle thin layer and the hard carbon thin layer formed thereof due to the ion plating process, by properly selecting the crucible and discharge gas, a desired diaphragm can be obtained in one batch, so that the excellent mass productivity can be obtained. Also, this ion plating process has the features such that the ionizing efficiency is high and the deposition rate is also high, so that it is extremely economical and the reliability is also high since the hard thin layer having the good adhesive property can be obtained.

Claims (15)

What is claimed is:
1. A method of forming a carbon layer on the surface of an article comprising the steps of:
respective disposing the article and a solid carbon source at opposite portions in a vacuum chamber which contains catalystic gas of a predetermined pressure wherein said catalystic gas is a hydrogen gas or mixture gas of hydrogen and argon;
vaporizing the solid carbon and applying an electric field to the vaporized carbon to ionize the vaporized carbon; and
applying an electrical potential to the article so that the ionized vapor carbon is deposited onto the surface of the article as the carbon layer.
2. A method according to claim 1, wherein said deposited carbon layer is amorphous carbon of inclusion of hybridized orbital SP2 bond and hybridized orbital SP3 bond and crystalline carbon particles of hybridized orbital SP3 bond dispersed in said amorphous carbon.
3. A method according to claim 1, wherein said deposited carbon layer is amorphous carbon of inclusion of hybridized orbital SP2 bond and hybridized orbital SP3 bond.
4. A method according to claim 1, wherein said solid carbon source is graphite.
5. A method according to claim 1, wherein said predetermined pressure is in the order of 10-4 Torr.
6. A method according to claim 1, wherein the deposition rate of the carbon layer is in the range of 0.02 μm/min to 0.1 μm/min.
7. A method of forming a carbon layer and an intermediate layer on the surface of an article comprising the steps of:
respectively disposing the article, a solid carbon source and an intermediate layer material solid source in a vacuum chamber which contains intermediate layer material gas of a predetermined pressure;
vaporizing the intermediate layer material solid source and applying an electrical field to the vaporized intermediate layer material solid source to ionize it as plasma which decomposes the intermediate layer material gas, whereby an intermediate layer material compound is produced in the plasma;
applying an electrical potential to the article so that the intermediate layer material compound is deposited onto the surface of the article as the intermediate layer;
exhausting the hydrocarbon gas and introducing catalystic gas in the chamber wherein said catalystic gas is hydrogen gas or mixture gas of hydrogen and argon, and vaporizing the solid carbon and applying an electric field to the vaporized carbon to ionize the vaporized carbon; and
applying an electrical potential to the article so that the ionized vapor carbon is deposited onto the intermediate thin layer on the article as the hard carbon layer.
8. A method according to claim 7, wherein said intermediate layer material gas is hydrocarbon.
9. A method according to claim 8, wherein said hydrocarbon is CH4.
10. A method according to claim 8, wherein said intermediate layer material compound is carbide.
11. A method according to claim 7, wherein the surface of said article is titanium.
12. A method according to claim 7, wherein said intermediate layer material solid source is titanium.
13. A method according to claim 7, wherein said solid carbon source is graphite.
14. A method according to claim 7, wherein said predetermined pressure is in the order of 10-4 Torr.
15. A method according to claim 7, wherein the deposition rate of the carbon layer is in the range of 0.02 μm/min to 0.1 μm/min.
US06/853,182 1985-04-22 1986-04-17 Method for forming a hard carbon thin film on article and applications thereof Expired - Fee Related US4725345A (en)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP60-84531 1985-04-22
JP8453085A JPS61244195A (en) 1985-04-22 1985-04-22 Acoustic diaphragm
JP60-84530 1985-04-22
JP8453185A JPS61244196A (en) 1985-04-22 1985-04-22 Composite acoustic diaphragm
JP60-84529 1985-04-22
JP8452985A JPS61244194A (en) 1985-04-22 1985-04-22 Acoustic diaphragm
JP60-127690 1985-06-12
JP12769085A JPS61285896A (en) 1985-06-12 1985-06-12 Production of acoustic diaphragm
JP60-197760 1985-09-09
JP19776085A JPS6259499A (en) 1985-09-09 1985-09-09 Acoustic diaphragm

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US07/116,539 Division US4772513A (en) 1985-04-22 1987-11-04 Method for forming a hard carbon thin film on article and applications thereof

Publications (1)

Publication Number Publication Date
US4725345A true US4725345A (en) 1988-02-16

Family

ID=27525098

Family Applications (2)

Application Number Title Priority Date Filing Date
US06/853,182 Expired - Fee Related US4725345A (en) 1985-04-22 1986-04-17 Method for forming a hard carbon thin film on article and applications thereof
US07/116,539 Expired - Fee Related US4772513A (en) 1985-04-22 1987-11-04 Method for forming a hard carbon thin film on article and applications thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
US07/116,539 Expired - Fee Related US4772513A (en) 1985-04-22 1987-11-04 Method for forming a hard carbon thin film on article and applications thereof

Country Status (1)

Country Link
US (2) US4725345A (en)

Cited By (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0280315A2 (en) * 1987-02-26 1988-08-31 Nissin Electric Company, Limited Method of forming a diamond film
US4802967A (en) * 1987-04-08 1989-02-07 Andus Corporation Surface treatment of polymers
US4842945A (en) * 1986-05-29 1989-06-27 Nippon Steel Corporation Stainless steel coated with thin film of carbon containing specified amount in a state of diamond and having an adjustable black transparent color tone
US4865711A (en) * 1987-04-08 1989-09-12 Andus Corporation Surface treatment of polymers
US4876984A (en) * 1987-06-12 1989-10-31 Ricoh Company, Ltd. Apparatus for forming a thin film
US4899347A (en) * 1989-05-11 1990-02-06 General Electric Company Solid state laser gain medium with diamond coating
FR2636197A1 (en) * 1988-08-24 1990-03-09 Mitsubishi Pencil Co PROCESS FOR PRODUCING CARBON ACOUSTIC MEMBRANE
US4913762A (en) * 1987-04-08 1990-04-03 Andus Corporation Surface treatment of polymers for bonding by applying a carbon layer with sputtering
US4925701A (en) * 1988-05-27 1990-05-15 Xerox Corporation Processes for the preparation of polycrystalline diamond films
US4961958A (en) * 1989-06-30 1990-10-09 The Regents Of The Univ. Of Calif. Process for making diamond, and doped diamond films at low temperature
EP0398257A2 (en) * 1989-05-18 1990-11-22 Yamaha Corporation A speaker diaphragm
US4981568A (en) * 1988-09-20 1991-01-01 International Business Machines Corp. Apparatus and method for producing high purity diamond films at low temperatures
US4987002A (en) * 1988-05-09 1991-01-22 Kabushiki Kaisha Kenwood Process for forming a crystalline diamond film
US4992298A (en) * 1988-10-11 1991-02-12 Beamalloy Corporation Dual ion beam ballistic alloying process
US5013580A (en) * 1987-10-27 1991-05-07 Thomson-Csf Video recording/play-back head, method for making it and apparatus applying said method
US5015494A (en) * 1987-02-24 1991-05-14 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method for depositing diamond
EP0440326A1 (en) * 1990-01-29 1991-08-07 BAUSCH & LOMB INCORPORATED Method of depositing diamond-like film onto a substrate having a low melting temperature
US5055318A (en) * 1988-10-11 1991-10-08 Beamalloy Corporation Dual ion beam ballistic alloying process
US5075094A (en) * 1990-04-30 1991-12-24 The United States Of America As Represented By The Secretary Of The Navy Method of growing diamond film on substrates
US5076147A (en) * 1989-04-13 1991-12-31 Endress U. Hauser Gmbh U. Co. Pressure sensor including a diaphragm having a protective layer thereon
US5087478A (en) * 1989-08-01 1992-02-11 Hughes Aircraft Company Deposition method and apparatus using plasma discharge
US5126206A (en) * 1990-03-20 1992-06-30 Diamonex, Incorporated Diamond-on-a-substrate for electronic applications
US5147687A (en) * 1991-05-22 1992-09-15 Diamonex, Inc. Hot filament CVD of thick, adherent and coherent polycrystalline diamond films
US5182093A (en) * 1990-01-08 1993-01-26 Celestech, Inc. Diamond deposition cell
US5190824A (en) * 1988-03-07 1993-03-02 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating
US5242663A (en) * 1989-09-20 1993-09-07 Sumitomo Electric Industries, Ltd. Method of and apparatus for synthesizing hard material
US5246741A (en) * 1989-12-22 1993-09-21 Hitachi, Ltd. Method for surface modification and apparatus therefor
US5255260A (en) * 1989-07-28 1993-10-19 Matsushita Electric Industrial Co., Ltd. Optical recording apparatus employing stacked recording media with spiral grooves and floating optical heads
US5272009A (en) * 1988-10-21 1993-12-21 Battelle Memorial Institute Laminate material and its use as heat-sink
US5310596A (en) * 1990-08-10 1994-05-10 Norton Company Multi-layer superhard film structure
US5320877A (en) * 1990-11-01 1994-06-14 Matsushita Electric Industrial Co., Ltd. Method for forming thin film and apparatus therefor
US5340401A (en) * 1989-01-06 1994-08-23 Celestech Inc. Diamond deposition cell
US5368939A (en) * 1991-04-08 1994-11-29 Yoshida Kogyo K.K. Hard multilayer coated product and process for producing same
US5432004A (en) * 1992-07-15 1995-07-11 Sumitomo Electric Industries, Ltd. Vibration plate of a speaker and method for producing same
WO1995027806A1 (en) * 1994-04-06 1995-10-19 The Regents Of The University Of California Process to produce diamond films
US5462772A (en) * 1957-06-27 1995-10-31 Lemelson; Jerome H. Methods for forming artificial diamond
US5464667A (en) * 1994-08-16 1995-11-07 Minnesota Mining And Manufacturing Company Jet plasma process and apparatus
US5593719A (en) * 1994-03-29 1997-01-14 Southwest Research Institute Treatments to reduce frictional wear between components made of ultra-high molecular weight polyethylene and metal alloys
US5601883A (en) * 1987-02-10 1997-02-11 Semicondoctor Energy Laboratory Co., Inc. Microwave enhanced CVD method for coating plastic with carbon films
US5605714A (en) * 1994-03-29 1997-02-25 Southwest Research Institute Treatments to reduce thrombogeneticity in heart valves made from titanium and its alloys
US5616372A (en) * 1995-06-07 1997-04-01 Syndia Corporation Method of applying a wear-resistant diamond coating to a substrate
US5662877A (en) * 1989-08-23 1997-09-02 Tdk Corporation Process for forming diamond-like thin film
US5688557A (en) * 1995-06-07 1997-11-18 Lemelson; Jerome H. Method of depositing synthetic diamond coatings with intermediates bonding layers
US5705262A (en) * 1993-11-12 1998-01-06 Le Carbone Lorraine Surface treatment of carbonaceous material for making a subsequent deposit of diamond adherent and diamond-covered pieces obtained
US5714202A (en) * 1995-06-07 1998-02-03 Lemelson; Jerome H. Synthetic diamond overlays for gas turbine engine parts having thermal barrier coatings
US5725573A (en) * 1994-03-29 1998-03-10 Southwest Research Institute Medical implants made of metal alloys bearing cohesive diamond like carbon coatings
US5731045A (en) * 1996-01-26 1998-03-24 Southwest Research Institute Application of diamond-like carbon coatings to cobalt-cemented tungsten carbide components
US5740941A (en) * 1993-08-16 1998-04-21 Lemelson; Jerome Sheet material with coating
US5780119A (en) * 1996-03-20 1998-07-14 Southwest Research Institute Treatments to reduce friction and wear on metal alloy components
US5866195A (en) * 1988-03-31 1999-02-02 Lemelson; Jerome H. Methods for forming diamond-coated superconductor wire
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
GB2331998A (en) * 1997-12-02 1999-06-09 Teer Coatings Ltd Articles bearing carbon coatings
US5945153A (en) * 1994-07-11 1999-08-31 Southwest Research Institute Non-irritating antimicrobial coating for medical implants and a process for preparing same
US6083570A (en) * 1987-03-31 2000-07-04 Lemelson; Jerome H. Synthetic diamond coatings with intermediate amorphous metal bonding layers and methods of applying such coatings
US6083361A (en) * 1997-05-28 2000-07-04 Anelva Corporation Sputter device
US6087025A (en) * 1994-03-29 2000-07-11 Southwest Research Institute Application of diamond-like carbon coatings to cutting surfaces of metal cutting tools
US6162412A (en) * 1990-08-03 2000-12-19 Sumitomo Electric Industries, Ltd. Chemical vapor deposition method of high quality diamond
US6203898B1 (en) 1997-08-29 2001-03-20 3M Innovatave Properties Company Article comprising a substrate having a silicone coating
US6224952B1 (en) 1988-03-07 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6287711B1 (en) 1998-07-01 2001-09-11 Front Edge Technology, Inc. Wear-resistant coating and component
US20020073544A1 (en) * 2000-12-18 2002-06-20 Konica Corporation Manufacturing method of ink-jet haead
US6416865B1 (en) * 1998-10-30 2002-07-09 Sumitomo Electric Industries, Ltd. Hard carbon film and surface acoustic-wave substrate
US6503379B1 (en) 2000-05-22 2003-01-07 Basic Research, Inc. Mobile plating system and method
US6521104B1 (en) 2000-05-22 2003-02-18 Basic Resources, Inc. Configurable vacuum system and method
US20030150858A1 (en) * 2000-08-01 2003-08-14 Jean-Tristan Outreman Plasma coating method
US20030180450A1 (en) * 2002-03-22 2003-09-25 Kidd Jerry D. System and method for preventing breaker failure
US6660365B1 (en) 1998-12-21 2003-12-09 Cardinal Cg Company Soil-resistant coating for glass surfaces
US20040118455A1 (en) * 2002-12-18 2004-06-24 Masco Corporation Of Indiana Valve component with multiple surface layers
US20050016835A1 (en) * 1998-12-21 2005-01-27 Cardinal Cg Company Soil-resistant coating for glass surfaces
US20050126497A1 (en) * 2003-09-30 2005-06-16 Kidd Jerry D. Platform assembly and method
US20050137084A1 (en) * 2003-12-22 2005-06-23 Krisko Annette J. Graded photocatalytic coatings
GB2413234A (en) * 2004-04-15 2005-10-19 B & W Loudspeakers Diamond diaphragms for loudspeaker drive units or microphones
US6974629B1 (en) 1999-08-06 2005-12-13 Cardinal Cg Company Low-emissivity, soil-resistant coating for glass surfaces
WO2006021275A1 (en) * 2004-08-26 2006-03-02 Schaeffler Kg Wear-resistant coating and method for producing the same
US20060057401A1 (en) * 2004-07-12 2006-03-16 Krisko Annette J Low-maintenance coatings
US20060102373A1 (en) * 2002-07-17 2006-05-18 Sumitomo Electric Industries, Ltd. Member for semiconductor device
US20060118408A1 (en) * 2004-12-03 2006-06-08 Kari Myli Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US20060121315A1 (en) * 2004-12-03 2006-06-08 Kari Myli Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US20060216589A1 (en) * 2005-03-25 2006-09-28 Front Edge Technology, Inc. Thin film battery with protective packaging
US20070026205A1 (en) * 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
US20070127309A1 (en) * 1998-11-10 2007-06-07 Sipec Corporation Chemical supply system
US7250196B1 (en) * 1999-10-26 2007-07-31 Basic Resources, Inc. System and method for plasma plating
US20070248756A1 (en) * 2006-04-19 2007-10-25 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
US20070278444A1 (en) * 2002-12-18 2007-12-06 Vapor Technologies, Inc. Valve component for faucet
US20080124566A1 (en) * 2004-11-26 2008-05-29 Clint Guy Smallman Composite Material Comprising Ultra-Hard Particles Embedded in a Metal or Metal Alloy Matrix and Diaphragm Made Thereof
US20080213664A1 (en) * 2007-03-02 2008-09-04 Front Edge Technology, Inc. Thin film battery and manufacturing method
US20080315146A1 (en) * 2002-12-18 2008-12-25 Masco Corporation Of Indiana Faucet
US20090057136A1 (en) * 2007-09-04 2009-03-05 Front Edge Technology, Inc. Manufacturing method for thin film battery
US20090136839A1 (en) * 2007-11-28 2009-05-28 Front Edge Technology, Inc. Thin film battery comprising stacked battery cells and method
US20090208671A1 (en) * 2008-02-18 2009-08-20 Front Edge Technology, Inc. Thin film battery fabrication using laser shaping
US20100089773A1 (en) * 2002-06-10 2010-04-15 Trustees Of Tufts College Total organic compound (toc) analyzer
US20100186834A1 (en) * 2002-12-18 2010-07-29 Masco Corporation Of Indiana Faucet component with improved coating
US20100326817A1 (en) * 2007-09-14 2010-12-30 Cardinal Cg Company Low-maintenance coatings, and methods for producing low-maintenance coatings
US7862627B2 (en) 2007-04-27 2011-01-04 Front Edge Technology, Inc. Thin film battery substrate cutting and fabrication process
US20110050159A1 (en) * 2009-08-28 2011-03-03 Front Edge Technology, Inc. Battery charging apparatus and method
US20110076550A1 (en) * 2005-03-25 2011-03-31 Front Edge Technology, Inc. Battery with protective packaging
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
WO2013048733A1 (en) * 2011-09-27 2013-04-04 Regents Of The University Of California Anti-charging surface passivation for charged particle optics
US20130224393A1 (en) * 2012-02-23 2013-08-29 Sulzer Metco Ag Plasma Spray Method
CN103731793A (en) * 2013-12-27 2014-04-16 瑞声声学科技(深圳)有限公司 Method for manufacturing compound vibrating diaphragm
US8753724B2 (en) 2012-09-26 2014-06-17 Front Edge Technology Inc. Plasma deposition on a partially formed battery through a mesh screen
US8864954B2 (en) 2011-12-23 2014-10-21 Front Edge Technology Inc. Sputtering lithium-containing material with multiple targets
US8865340B2 (en) 2011-10-20 2014-10-21 Front Edge Technology Inc. Thin film battery packaging formed by localized heating
US9077000B2 (en) 2012-03-29 2015-07-07 Front Edge Technology, Inc. Thin film battery and localized heat treatment
US9257695B2 (en) 2012-03-29 2016-02-09 Front Edge Technology, Inc. Localized heat treatment of battery component films
US9279291B2 (en) 2011-12-30 2016-03-08 Smith International, Inc. Diamond enhanced drilling insert with high impact resistance
US9356320B2 (en) 2012-10-15 2016-05-31 Front Edge Technology Inc. Lithium battery having low leakage anode
US9738967B2 (en) 2006-07-12 2017-08-22 Cardinal Cg Company Sputtering apparatus including target mounting and control
US9887429B2 (en) 2011-12-21 2018-02-06 Front Edge Technology Inc. Laminated lithium battery
US9905895B2 (en) 2012-09-25 2018-02-27 Front Edge Technology, Inc. Pulsed mode apparatus with mismatched battery
US10008739B2 (en) 2015-02-23 2018-06-26 Front Edge Technology, Inc. Solid-state lithium battery with electrolyte
CN108632721A (en) * 2017-03-15 2018-10-09 奥音科技(北京)有限公司 Top dome made of ceramic material
US10604442B2 (en) 2016-11-17 2020-03-31 Cardinal Cg Company Static-dissipative coating technology
CN112626450A (en) * 2020-12-15 2021-04-09 国光电器股份有限公司 Ceramic vibrating diaphragm and preparation method thereof
US10984830B2 (en) * 2017-02-24 2021-04-20 The National University Of Singapore Two dimensional amorphous carbon as overcoat for heat assisted magnetic recording media
US11114674B2 (en) 2017-02-24 2021-09-07 National University Of Singapore Proton conductive two-dimensional amorphous carbon film for gas membrane and fuel cell applications

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283299A (en) * 1987-05-15 1988-11-21 Mitsubishi Pencil Co Ltd Diaphragm for acoustic apparatus
US4960640A (en) * 1988-02-19 1990-10-02 Refractory Composites, Inc. Composite refractory material
US4863798A (en) * 1988-07-21 1989-09-05 Refractory Composites, Inc. Refractory composite material and method of making such material
JPH03145900A (en) * 1989-11-01 1991-06-21 Yamaha Corp Diaphragm for speaker
US5045165A (en) * 1990-02-01 1991-09-03 Komag, Inc. Method for sputtering a hydrogen-doped carbon protective film on a magnetic disk
JPH046265A (en) * 1990-04-24 1992-01-10 Toyota Central Res & Dev Lab Inc Formation of solid lubricating film to ferrous alloy base body and sliding member having solid lubricating film
EP0632675B1 (en) * 1993-06-28 2001-08-16 Matsushita Electric Industrial Co., Ltd. Diaphragm-edge integral moldings for speakers, acoustic transducers comprising same and method for fabricating same
US5701359A (en) * 1995-04-06 1997-12-23 Precision Power Flat-panel speaker
US6097829A (en) * 1995-04-06 2000-08-01 Precision Power, Inc. Fiber-honeycomb-fiber sandwich speaker diaphragm and method
JPH11355895A (en) * 1998-06-12 1999-12-24 Matsushita Electric Ind Co Ltd Manufacture of diaphragm for loudspeaker
US6404897B1 (en) * 1999-01-05 2002-06-11 Harman International Industries, Inc. Ceramic metal matrix diaphragm for loudspeakers
JP4418571B2 (en) * 2000-04-11 2010-02-17 シーケーディ株式会社 High temperature gas control valve
US20060133639A1 (en) * 2004-12-17 2006-06-22 Meiloon Industrial Co., Ltd. Diaphragm for loudspeaker - magnesium alloy base and multi-layers ceramic structure
GB0500788D0 (en) * 2005-01-14 2005-02-23 Element Six Ltd Rigid three-dimensional components
CN1863413A (en) * 2005-05-12 2006-11-15 光宝科技股份有限公司 Loudspeaker structure
TWI452912B (en) * 2010-02-26 2014-09-11 Usher Audio Thecnology Co Ltd Acoustic horn diaphragm device
CN202269005U (en) * 2011-11-03 2012-06-06 易力声科技(深圳)有限公司 Loudspeaker diaphragm and loudspeaker using same
TWI539836B (en) * 2012-08-23 2016-06-21 逢甲大學 Diaphragm structure for speaker and method of manufacturing method of the diaphragm structure

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173522A (en) * 1976-09-09 1979-11-06 Balzers Patent- Und Beteiligungs-Aktiengesellschaft Method and apparatus for producing carbon coatings by sputtering
US4460060A (en) * 1980-03-07 1984-07-17 Toray Industries, Inc. Vibratory diaphragm for loudspeaker
US4470479A (en) * 1977-03-24 1984-09-11 Matsushita Electric Industrial Co., Ltd. Method of making metal coated foil speaker diaphragm
US4486286A (en) * 1982-09-28 1984-12-04 Nerken Research Corp. Method of depositing a carbon film on a substrate and products obtained thereby
US4490229A (en) * 1984-07-09 1984-12-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamondlike carbon films
US4525417A (en) * 1982-02-27 1985-06-25 U.S. Philips Corporation Carbon-containing sliding layer
US4551216A (en) * 1983-09-30 1985-11-05 Siemens Aktiengesellschaft Layer containing carbon and a method and apparatus for producing such a layer
US4552243A (en) * 1984-05-03 1985-11-12 Pioneer Industrial Components, Inc. Diaphragm material for acoustical transducer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969131A (en) * 1972-07-24 1976-07-13 Westinghouse Electric Corporation Coated graphite members and process for producing the same
US3980105A (en) * 1974-07-10 1976-09-14 Hitco Laminated article comprising pyrolytic graphite and a composite substrate therefor
US4442165A (en) * 1981-03-26 1984-04-10 General Electric Co. Low-density thermally insulating carbon-carbon syntactic foam composite
US4698256A (en) * 1984-04-02 1987-10-06 American Cyanamid Company Articles coated with adherent diamondlike carbon films

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173522A (en) * 1976-09-09 1979-11-06 Balzers Patent- Und Beteiligungs-Aktiengesellschaft Method and apparatus for producing carbon coatings by sputtering
US4470479A (en) * 1977-03-24 1984-09-11 Matsushita Electric Industrial Co., Ltd. Method of making metal coated foil speaker diaphragm
US4460060A (en) * 1980-03-07 1984-07-17 Toray Industries, Inc. Vibratory diaphragm for loudspeaker
US4525417A (en) * 1982-02-27 1985-06-25 U.S. Philips Corporation Carbon-containing sliding layer
US4486286A (en) * 1982-09-28 1984-12-04 Nerken Research Corp. Method of depositing a carbon film on a substrate and products obtained thereby
US4551216A (en) * 1983-09-30 1985-11-05 Siemens Aktiengesellschaft Layer containing carbon and a method and apparatus for producing such a layer
US4552243A (en) * 1984-05-03 1985-11-12 Pioneer Industrial Components, Inc. Diaphragm material for acoustical transducer
US4490229A (en) * 1984-07-09 1984-12-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamondlike carbon films

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Banks et al., Jvac Sci. Technol. 21(3), 1982, pp. 807 814. *
Banks et al., Jvac Sci. Technol. 21(3), 1982, pp. 807-814.

Cited By (196)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5462772A (en) * 1957-06-27 1995-10-31 Lemelson; Jerome H. Methods for forming artificial diamond
US4842945A (en) * 1986-05-29 1989-06-27 Nippon Steel Corporation Stainless steel coated with thin film of carbon containing specified amount in a state of diamond and having an adjustable black transparent color tone
US5601883A (en) * 1987-02-10 1997-02-11 Semicondoctor Energy Laboratory Co., Inc. Microwave enhanced CVD method for coating plastic with carbon films
US5015494A (en) * 1987-02-24 1991-05-14 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method for depositing diamond
EP0280315A3 (en) * 1987-02-26 1989-07-19 Nissin Electric Company, Limited Method of forming a diamond film
EP0280315A2 (en) * 1987-02-26 1988-08-31 Nissin Electric Company, Limited Method of forming a diamond film
US4915977A (en) * 1987-02-26 1990-04-10 Nissin Electric Co., Ltd. Method of forming a diamond film
US6083570A (en) * 1987-03-31 2000-07-04 Lemelson; Jerome H. Synthetic diamond coatings with intermediate amorphous metal bonding layers and methods of applying such coatings
US4802967A (en) * 1987-04-08 1989-02-07 Andus Corporation Surface treatment of polymers
US4865711A (en) * 1987-04-08 1989-09-12 Andus Corporation Surface treatment of polymers
US4913762A (en) * 1987-04-08 1990-04-03 Andus Corporation Surface treatment of polymers for bonding by applying a carbon layer with sputtering
US4876984A (en) * 1987-06-12 1989-10-31 Ricoh Company, Ltd. Apparatus for forming a thin film
US5013580A (en) * 1987-10-27 1991-05-07 Thomson-Csf Video recording/play-back head, method for making it and apparatus applying said method
US6207281B1 (en) * 1988-03-07 2001-03-27 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US7144629B2 (en) 1988-03-07 2006-12-05 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6224952B1 (en) 1988-03-07 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US5190824A (en) * 1988-03-07 1993-03-02 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating
US6583481B2 (en) 1988-03-07 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US5871847A (en) * 1988-03-07 1999-02-16 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US20010018097A1 (en) * 1988-03-07 2001-08-30 Kenji Itoh Electrostatic-erasing abrasion-proof coating and method for forming the same
US6265070B1 (en) 1988-03-07 2001-07-24 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US5866195A (en) * 1988-03-31 1999-02-02 Lemelson; Jerome H. Methods for forming diamond-coated superconductor wire
US4987002A (en) * 1988-05-09 1991-01-22 Kabushiki Kaisha Kenwood Process for forming a crystalline diamond film
US4925701A (en) * 1988-05-27 1990-05-15 Xerox Corporation Processes for the preparation of polycrystalline diamond films
FR2636197A1 (en) * 1988-08-24 1990-03-09 Mitsubishi Pencil Co PROCESS FOR PRODUCING CARBON ACOUSTIC MEMBRANE
US4981568A (en) * 1988-09-20 1991-01-01 International Business Machines Corp. Apparatus and method for producing high purity diamond films at low temperatures
US5055318A (en) * 1988-10-11 1991-10-08 Beamalloy Corporation Dual ion beam ballistic alloying process
US4992298A (en) * 1988-10-11 1991-02-12 Beamalloy Corporation Dual ion beam ballistic alloying process
US5272009A (en) * 1988-10-21 1993-12-21 Battelle Memorial Institute Laminate material and its use as heat-sink
US5340401A (en) * 1989-01-06 1994-08-23 Celestech Inc. Diamond deposition cell
US5076147A (en) * 1989-04-13 1991-12-31 Endress U. Hauser Gmbh U. Co. Pressure sensor including a diaphragm having a protective layer thereon
EP0397298A2 (en) * 1989-05-11 1990-11-14 General Electric Company Solid state laser gain medium
EP0397298A3 (en) * 1989-05-11 1991-07-10 General Electric Company Solid state laser gain medium
US4899347A (en) * 1989-05-11 1990-02-06 General Electric Company Solid state laser gain medium with diamond coating
EP0398257A2 (en) * 1989-05-18 1990-11-22 Yamaha Corporation A speaker diaphragm
EP0398257A3 (en) * 1989-05-18 1993-02-24 Yamaha Corporation A speaker diaphragm
WO1991000377A1 (en) * 1989-06-30 1991-01-10 The Regents Of The University Of California Process for making diamond, doped diamond, diamond-cubic boron nitride composite films at low temperature
US4961958A (en) * 1989-06-30 1990-10-09 The Regents Of The Univ. Of Calif. Process for making diamond, and doped diamond films at low temperature
US5255260A (en) * 1989-07-28 1993-10-19 Matsushita Electric Industrial Co., Ltd. Optical recording apparatus employing stacked recording media with spiral grooves and floating optical heads
US5087478A (en) * 1989-08-01 1992-02-11 Hughes Aircraft Company Deposition method and apparatus using plasma discharge
US5662877A (en) * 1989-08-23 1997-09-02 Tdk Corporation Process for forming diamond-like thin film
US5242663A (en) * 1989-09-20 1993-09-07 Sumitomo Electric Industries, Ltd. Method of and apparatus for synthesizing hard material
US5246741A (en) * 1989-12-22 1993-09-21 Hitachi, Ltd. Method for surface modification and apparatus therefor
US5182093A (en) * 1990-01-08 1993-01-26 Celestech, Inc. Diamond deposition cell
EP0440326A1 (en) * 1990-01-29 1991-08-07 BAUSCH & LOMB INCORPORATED Method of depositing diamond-like film onto a substrate having a low melting temperature
US5126206A (en) * 1990-03-20 1992-06-30 Diamonex, Incorporated Diamond-on-a-substrate for electronic applications
US5075094A (en) * 1990-04-30 1991-12-24 The United States Of America As Represented By The Secretary Of The Navy Method of growing diamond film on substrates
US6162412A (en) * 1990-08-03 2000-12-19 Sumitomo Electric Industries, Ltd. Chemical vapor deposition method of high quality diamond
US5310596A (en) * 1990-08-10 1994-05-10 Norton Company Multi-layer superhard film structure
US5320877A (en) * 1990-11-01 1994-06-14 Matsushita Electric Industrial Co., Ltd. Method for forming thin film and apparatus therefor
US5368939A (en) * 1991-04-08 1994-11-29 Yoshida Kogyo K.K. Hard multilayer coated product and process for producing same
US5147687A (en) * 1991-05-22 1992-09-15 Diamonex, Inc. Hot filament CVD of thick, adherent and coherent polycrystalline diamond films
US5432004A (en) * 1992-07-15 1995-07-11 Sumitomo Electric Industries, Ltd. Vibration plate of a speaker and method for producing same
US5556464A (en) * 1992-07-15 1996-09-17 Sumitomo Electric Industries, Ltd. Vibration plate of a speaker and method for producing same
US5740941A (en) * 1993-08-16 1998-04-21 Lemelson; Jerome Sheet material with coating
US5794801A (en) * 1993-08-16 1998-08-18 Lemelson; Jerome Material compositions
US5705262A (en) * 1993-11-12 1998-01-06 Le Carbone Lorraine Surface treatment of carbonaceous material for making a subsequent deposit of diamond adherent and diamond-covered pieces obtained
US5605714A (en) * 1994-03-29 1997-02-25 Southwest Research Institute Treatments to reduce thrombogeneticity in heart valves made from titanium and its alloys
US5725573A (en) * 1994-03-29 1998-03-10 Southwest Research Institute Medical implants made of metal alloys bearing cohesive diamond like carbon coatings
US6087025A (en) * 1994-03-29 2000-07-11 Southwest Research Institute Application of diamond-like carbon coatings to cutting surfaces of metal cutting tools
US5593719A (en) * 1994-03-29 1997-01-14 Southwest Research Institute Treatments to reduce frictional wear between components made of ultra-high molecular weight polyethylene and metal alloys
WO1995027806A1 (en) * 1994-04-06 1995-10-19 The Regents Of The University Of California Process to produce diamond films
US6361567B1 (en) 1994-07-11 2002-03-26 Southwest Research Institute Non-irritating antimicrobial coating for medical implants and a process for preparing same
US5945153A (en) * 1994-07-11 1999-08-31 Southwest Research Institute Non-irritating antimicrobial coating for medical implants and a process for preparing same
US5984905A (en) * 1994-07-11 1999-11-16 Southwest Research Institute Non-irritating antimicrobial coating for medical implants and a process for preparing same
US5464667A (en) * 1994-08-16 1995-11-07 Minnesota Mining And Manufacturing Company Jet plasma process and apparatus
US5714202A (en) * 1995-06-07 1998-02-03 Lemelson; Jerome H. Synthetic diamond overlays for gas turbine engine parts having thermal barrier coatings
US5688557A (en) * 1995-06-07 1997-11-18 Lemelson; Jerome H. Method of depositing synthetic diamond coatings with intermediates bonding layers
US5616372A (en) * 1995-06-07 1997-04-01 Syndia Corporation Method of applying a wear-resistant diamond coating to a substrate
US5731045A (en) * 1996-01-26 1998-03-24 Southwest Research Institute Application of diamond-like carbon coatings to cobalt-cemented tungsten carbide components
US5780119A (en) * 1996-03-20 1998-07-14 Southwest Research Institute Treatments to reduce friction and wear on metal alloy components
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US6083361A (en) * 1997-05-28 2000-07-04 Anelva Corporation Sputter device
US6203898B1 (en) 1997-08-29 2001-03-20 3M Innovatave Properties Company Article comprising a substrate having a silicone coating
US6348237B2 (en) 1997-08-29 2002-02-19 3M Innovative Properties Company Jet plasma process for deposition of coatings
US20050003098A1 (en) * 1997-08-29 2005-01-06 3M Innovative Properties Company Flash evaporation-plasma coating deposition method
US20020102361A1 (en) * 1997-08-29 2002-08-01 3M Innovative Properties Company Jet plasma process and apparatus for deposition of coatings and the coatings thereof
US7189436B2 (en) 1997-08-29 2007-03-13 3M Innovative Properties Company Flash evaporation-plasma coating deposition method
GB2331998A (en) * 1997-12-02 1999-06-09 Teer Coatings Ltd Articles bearing carbon coatings
US6726993B2 (en) 1997-12-02 2004-04-27 Teer Coatings Limited Carbon coatings, method and apparatus for applying them, and articles bearing such coatings
GB2331998B (en) * 1997-12-02 2003-01-15 Teer Coatings Ltd Carbon coatings, method and apparatus for applying them, and articles bearing such coatings
US6287711B1 (en) 1998-07-01 2001-09-11 Front Edge Technology, Inc. Wear-resistant coating and component
US6416865B1 (en) * 1998-10-30 2002-07-09 Sumitomo Electric Industries, Ltd. Hard carbon film and surface acoustic-wave substrate
US20070127309A1 (en) * 1998-11-10 2007-06-07 Sipec Corporation Chemical supply system
US6939446B2 (en) 1998-12-21 2005-09-06 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6660365B1 (en) 1998-12-21 2003-12-09 Cardinal Cg Company Soil-resistant coating for glass surfaces
US20030228431A1 (en) * 1998-12-21 2003-12-11 Annette Krisko Soil-resistant coating for glass surfaces
US20060000706A1 (en) * 1998-12-21 2006-01-05 Cardinal Cg Company Soil-resistant coating for glass surfaces
US7294403B2 (en) 1998-12-21 2007-11-13 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6964731B1 (en) 1998-12-21 2005-11-15 Cardinal Cg Company Soil-resistant coating for glass surfaces
US7491301B2 (en) 1998-12-21 2009-02-17 Cardinal Cg Company Methods and apparatuses for depositing film on both sides of a pane
US20050016835A1 (en) * 1998-12-21 2005-01-27 Cardinal Cg Company Soil-resistant coating for glass surfaces
US20050025982A1 (en) * 1998-12-21 2005-02-03 Cardinal Cg Company Soil-resistant coating for glass surfaces
US20060115655A1 (en) * 1998-12-21 2006-06-01 Krisko Annette J Low-emissivity, soil-resistant coating for glass surfaces
US6974629B1 (en) 1999-08-06 2005-12-13 Cardinal Cg Company Low-emissivity, soil-resistant coating for glass surfaces
US7250196B1 (en) * 1999-10-26 2007-07-31 Basic Resources, Inc. System and method for plasma plating
US6503379B1 (en) 2000-05-22 2003-01-07 Basic Research, Inc. Mobile plating system and method
US6905582B2 (en) 2000-05-22 2005-06-14 Basic Resources, Inc. Configurable vacuum system and method
US6858119B2 (en) 2000-05-22 2005-02-22 Basic Resources, Inc. Mobile plating system and method
US7189437B2 (en) 2000-05-22 2007-03-13 Basic Resources, Inc. Mobile plating system and method
US20030159926A1 (en) * 2000-05-22 2003-08-28 Kidd Jerry D. Configurable vacuum system and method
US20030136670A1 (en) * 2000-05-22 2003-07-24 Kidd Jerry D. Mobile plating system and method
US6521104B1 (en) 2000-05-22 2003-02-18 Basic Resources, Inc. Configurable vacuum system and method
US20030150858A1 (en) * 2000-08-01 2003-08-14 Jean-Tristan Outreman Plasma coating method
US20050212864A1 (en) * 2000-12-18 2005-09-29 Konica Minolta Holdings, Inc. Manufacturing method of ink-jet head
US7370415B2 (en) 2000-12-18 2008-05-13 Konica Minolta Holdings, Inc. Manufacturing method of ink-jet head
US20020073544A1 (en) * 2000-12-18 2002-06-20 Konica Corporation Manufacturing method of ink-jet haead
US20030180450A1 (en) * 2002-03-22 2003-09-25 Kidd Jerry D. System and method for preventing breaker failure
US20100089773A1 (en) * 2002-06-10 2010-04-15 Trustees Of Tufts College Total organic compound (toc) analyzer
US8216447B2 (en) 2002-06-10 2012-07-10 O.I. Corporation Total organic compound (TOC) analyzer
US20060102373A1 (en) * 2002-07-17 2006-05-18 Sumitomo Electric Industries, Ltd. Member for semiconductor device
US6935618B2 (en) 2002-12-18 2005-08-30 Masco Corporation Of Indiana Valve component with multiple surface layers
US20070278444A1 (en) * 2002-12-18 2007-12-06 Vapor Technologies, Inc. Valve component for faucet
US8118055B2 (en) 2002-12-18 2012-02-21 Vapor Technologies Inc. Valve component for faucet
US20040118455A1 (en) * 2002-12-18 2004-06-24 Masco Corporation Of Indiana Valve component with multiple surface layers
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US7216661B2 (en) 2002-12-18 2007-05-15 Masco Corporation Of Indiana Method of forming a wear resistant component
US20100252130A1 (en) * 2002-12-18 2010-10-07 Vapor Technologies, Inc. Valve component for faucet
US20060038156A1 (en) * 2002-12-18 2006-02-23 Masco Corporation Of Indiana Method of forming a wear resistant component
US20080315146A1 (en) * 2002-12-18 2008-12-25 Masco Corporation Of Indiana Faucet
US7445026B2 (en) 2002-12-18 2008-11-04 Masco Corporation Of Indiana Valve component with improved wear resistance
US20100186834A1 (en) * 2002-12-18 2010-07-29 Masco Corporation Of Indiana Faucet component with improved coating
US9909677B2 (en) 2002-12-18 2018-03-06 Delta Faucet Company Faucet component with coating
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US9388910B2 (en) 2002-12-18 2016-07-12 Delta Faucet Company Faucet component with coating
US20040129314A1 (en) * 2002-12-18 2004-07-08 Masco Corporation Of Indiana Valve component with multiple surface layers
US20050126497A1 (en) * 2003-09-30 2005-06-16 Kidd Jerry D. Platform assembly and method
US20050137084A1 (en) * 2003-12-22 2005-06-23 Krisko Annette J. Graded photocatalytic coatings
US7294404B2 (en) 2003-12-22 2007-11-13 Cardinal Cg Company Graded photocatalytic coatings
GB2413234A (en) * 2004-04-15 2005-10-19 B & W Loudspeakers Diamond diaphragms for loudspeaker drive units or microphones
GB2413234B (en) * 2004-04-15 2007-09-12 B & W Loudspeakers Diaphragms for loudspeaker drive units or microphones
US20070195986A1 (en) * 2004-04-15 2007-08-23 B & W Loudspeakers Limited Diaphragms for Loudspeaker Drive Units For Microphones
USRE44155E1 (en) 2004-07-12 2013-04-16 Cardinal Cg Company Low-maintenance coatings
US20060057298A1 (en) * 2004-07-12 2006-03-16 Krisko Annette J Low-maintenance coatings
US20060057401A1 (en) * 2004-07-12 2006-03-16 Krisko Annette J Low-maintenance coatings
US7604865B2 (en) 2004-07-12 2009-10-20 Cardinal Cg Company Low-maintenance coatings
US7713632B2 (en) 2004-07-12 2010-05-11 Cardinal Cg Company Low-maintenance coatings
USRE43817E1 (en) 2004-07-12 2012-11-20 Cardinal Cg Company Low-maintenance coatings
WO2006021275A1 (en) * 2004-08-26 2006-03-02 Schaeffler Kg Wear-resistant coating and method for producing the same
US20070224349A1 (en) * 2004-08-26 2007-09-27 Schaeffler Kg Wear-Resistant Coating and Method for Producing Same
US20080124566A1 (en) * 2004-11-26 2008-05-29 Clint Guy Smallman Composite Material Comprising Ultra-Hard Particles Embedded in a Metal or Metal Alloy Matrix and Diaphragm Made Thereof
US20060118408A1 (en) * 2004-12-03 2006-06-08 Kari Myli Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US20060121315A1 (en) * 2004-12-03 2006-06-08 Kari Myli Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US8679674B2 (en) 2005-03-25 2014-03-25 Front Edge Technology, Inc. Battery with protective packaging
US7846579B2 (en) 2005-03-25 2010-12-07 Victor Krasnov Thin film battery with protective packaging
US20110076550A1 (en) * 2005-03-25 2011-03-31 Front Edge Technology, Inc. Battery with protective packaging
US8475955B2 (en) 2005-03-25 2013-07-02 Front Edge Technology, Inc. Thin film battery with electrical connector connecting battery cells
US8168322B2 (en) 2005-03-25 2012-05-01 Front Edge Technology, Inc. Thin film battery with protective packaging
US20100227214A1 (en) * 2005-03-25 2010-09-09 Front Edge Technology, Inc. Thin film battery with protective packaging
US20060216589A1 (en) * 2005-03-25 2006-09-28 Front Edge Technology, Inc. Thin film battery with protective packaging
US20080264903A1 (en) * 2005-08-01 2008-10-30 Vapor Technologies Inc. Method of producing an article having patterned decorative coating
US20070026205A1 (en) * 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
US8123967B2 (en) 2005-08-01 2012-02-28 Vapor Technologies Inc. Method of producing an article having patterned decorative coating
US7989094B2 (en) 2006-04-19 2011-08-02 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
US20070248756A1 (en) * 2006-04-19 2007-10-25 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
US9738967B2 (en) 2006-07-12 2017-08-22 Cardinal Cg Company Sputtering apparatus including target mounting and control
US20080213664A1 (en) * 2007-03-02 2008-09-04 Front Edge Technology, Inc. Thin film battery and manufacturing method
US7862927B2 (en) 2007-03-02 2011-01-04 Front Edge Technology Thin film battery and manufacturing method
US20110094094A1 (en) * 2007-04-27 2011-04-28 Front Edge Technology, Inc. Pulsed laser cutting of thin film battery
US7862627B2 (en) 2007-04-27 2011-01-04 Front Edge Technology, Inc. Thin film battery substrate cutting and fabrication process
US8728176B2 (en) 2007-04-27 2014-05-20 Front Edge Technology, Inc. Pulsed laser cutting of thin film battery
US20090057136A1 (en) * 2007-09-04 2009-03-05 Front Edge Technology, Inc. Manufacturing method for thin film battery
US8628645B2 (en) 2007-09-04 2014-01-14 Front Edge Technology, Inc. Manufacturing method for thin film battery
US20100326817A1 (en) * 2007-09-14 2010-12-30 Cardinal Cg Company Low-maintenance coatings, and methods for producing low-maintenance coatings
US8506768B2 (en) 2007-09-14 2013-08-13 Cardinal Cg Company Low-maintenance coatings, and methods for producing low-maintenance coatings
US8696879B2 (en) 2007-09-14 2014-04-15 Cardinal Cg Company Low-maintenance coating technology
US20090136839A1 (en) * 2007-11-28 2009-05-28 Front Edge Technology, Inc. Thin film battery comprising stacked battery cells and method
US20090208671A1 (en) * 2008-02-18 2009-08-20 Front Edge Technology, Inc. Thin film battery fabrication using laser shaping
US8870974B2 (en) 2008-02-18 2014-10-28 Front Edge Technology, Inc. Thin film battery fabrication using laser shaping
US8502494B2 (en) 2009-08-28 2013-08-06 Front Edge Technology, Inc. Battery charging apparatus and method
US20110050159A1 (en) * 2009-08-28 2011-03-03 Front Edge Technology, Inc. Battery charging apparatus and method
WO2013048733A1 (en) * 2011-09-27 2013-04-04 Regents Of The University Of California Anti-charging surface passivation for charged particle optics
US8865340B2 (en) 2011-10-20 2014-10-21 Front Edge Technology Inc. Thin film battery packaging formed by localized heating
US9887429B2 (en) 2011-12-21 2018-02-06 Front Edge Technology Inc. Laminated lithium battery
US8864954B2 (en) 2011-12-23 2014-10-21 Front Edge Technology Inc. Sputtering lithium-containing material with multiple targets
US9279291B2 (en) 2011-12-30 2016-03-08 Smith International, Inc. Diamond enhanced drilling insert with high impact resistance
US20130224393A1 (en) * 2012-02-23 2013-08-29 Sulzer Metco Ag Plasma Spray Method
US9257695B2 (en) 2012-03-29 2016-02-09 Front Edge Technology, Inc. Localized heat treatment of battery component films
US9077000B2 (en) 2012-03-29 2015-07-07 Front Edge Technology, Inc. Thin film battery and localized heat treatment
US9905895B2 (en) 2012-09-25 2018-02-27 Front Edge Technology, Inc. Pulsed mode apparatus with mismatched battery
US8753724B2 (en) 2012-09-26 2014-06-17 Front Edge Technology Inc. Plasma deposition on a partially formed battery through a mesh screen
US9356320B2 (en) 2012-10-15 2016-05-31 Front Edge Technology Inc. Lithium battery having low leakage anode
CN103731793A (en) * 2013-12-27 2014-04-16 瑞声声学科技(深圳)有限公司 Method for manufacturing compound vibrating diaphragm
US10008739B2 (en) 2015-02-23 2018-06-26 Front Edge Technology, Inc. Solid-state lithium battery with electrolyte
US10604442B2 (en) 2016-11-17 2020-03-31 Cardinal Cg Company Static-dissipative coating technology
US11325859B2 (en) 2016-11-17 2022-05-10 Cardinal Cg Company Static-dissipative coating technology
US10984830B2 (en) * 2017-02-24 2021-04-20 The National University Of Singapore Two dimensional amorphous carbon as overcoat for heat assisted magnetic recording media
US11114674B2 (en) 2017-02-24 2021-09-07 National University Of Singapore Proton conductive two-dimensional amorphous carbon film for gas membrane and fuel cell applications
US11192788B2 (en) 2017-02-24 2021-12-07 National University Of Singapore Two-dimensional amorphous carbon coating and methods of growing and differentiating stem cells
CN108632721A (en) * 2017-03-15 2018-10-09 奥音科技(北京)有限公司 Top dome made of ceramic material
CN112626450A (en) * 2020-12-15 2021-04-09 国光电器股份有限公司 Ceramic vibrating diaphragm and preparation method thereof
CN112626450B (en) * 2020-12-15 2023-08-29 国光电器股份有限公司 Ceramic vibrating diaphragm and preparation method thereof

Also Published As

Publication number Publication date
US4772513A (en) 1988-09-20

Similar Documents

Publication Publication Date Title
US4725345A (en) Method for forming a hard carbon thin film on article and applications thereof
EP0341589B1 (en) Method of and apparatus for manufacturing a crystalline diamond film for use as an acoustic diaphragm
JP3660866B2 (en) Method and apparatus for forming hard carbon film
US5541003A (en) Articles having diamond-like protective thin film
JPS62196371A (en) Diamond coated member having high adhesiveness
US5707717A (en) Articles having diamond-like protective film
CA2184737A1 (en) Diamond-like carbon coated transducers for magnetic recording media
JPH10505879A (en) Diamond film deposition method on electroless plated nickel layer
KR100592100B1 (en) Diaphragm of micro speaker
JPH04341565A (en) Manufacture of silicon carbide film
JPH11158631A (en) Protective film, its production and article
Sattel et al. Nucleation during deposition of hydrocarbon ions as a function of substrate temperature
CN211047202U (en) Vibrating diaphragm
JP3205363B2 (en) Mold with diamond-like protective film
JPH0434873B2 (en)
JP3130094B2 (en) Mold with diamond-like protective film
JP2697751B2 (en) Method of coating diamond film
JP3110491B2 (en) Surface acoustic wave device using diamond-like film
JPS63226197A (en) Acoustic diaphragm
JPS6259499A (en) Acoustic diaphragm
JPS63226198A (en) Acoustic diaphragm
JPH07101957B2 (en) Diaphragm for speaker
JPH04341558A (en) Article with diamondlike protective film and its production
JPH0778871B2 (en) Magnetic disk
JPS60186195A (en) Manufacture of diaphragm for electroacoustic transducer

Legal Events

Date Code Title Description
AS Assignment

Owner name: TRIO KABUSHIKI KAISHA, 17-5, SHIBUYA 2-CHOME, SHIB

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:SAKAMOTO, MASAKATSU;OHTA, SHUHEI;IWAKURA, SHIRO;AND OTHERS;REEL/FRAME:004646/0149

Effective date: 19860414

CC Certificate of correction
FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
FP Lapsed due to failure to pay maintenance fee

Effective date: 20000216

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362