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Patente

VeröffentlichungsnummerUS5081398 A
PublikationstypErteilung
Anmeldenummer07/424,720
Veröffentlichungsdatum14. Jan. 1992
Eingetragen20. Okt. 1989
Prioritätsdatum
20. Okt. 1989
Auch veröffentlicht unter
Erfinder
Ursprünglich Bevollmächtigter
US-Klassifikation
Internationale Klassifikation
Unternehmensklassifikation
Europäische Klassifikation
H01J37/32M10D8
H01J37/32O10D
H01J37/32M10
H05H1/18
H05H1/30
Referenzen
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Resonant radio frequency wave coupler apparatus using higher modes
US 5081398 A
Zusammenfassung

An improved apparatus for generating a uniform electron cyclotron resonance (ECR) region in a plasma region (16) of a chamber (15) is described. The apparatus uses higher modes of electrical field cusps (16b) which are essentially perpendicular to the magnetic field cusps (16a) in a controlled manner to produce the ECR. The modes are optimal in the ECR region.

Ansprüche
We claim:

1. A plasma generating apparatus including a plasma source employing a radio frequency, including UHF or microwave, wave coupler of a non-magnetic metal in the shape of a hollow cavity which can be excited in one or more TE or TM modes of resonance, including an electrically insulated chamber having a central longitudinal axis and mounted in the coupler, including a gas supply means for providing a gas which is ionized to form the plasma in the chamber, including a probe connected to and extending inside the coupler for coupling the radio frequency waves to the coupler, wherein the radio frequency wave applied to the coupler creates and maintains the plasma at reduced pressures perpendicular to and surrounding the central longitudinal axis in the chamber, the improvement which comprises:

(a) spaced apart magnet means mounted on the apparatus around the longitudinal axis of the chamber with N and S poles so as to create static magnetic field cusps in the chamber between the poles which aid in confining the plasma in the chamber;

(b) gas supply means for providing a gas in the chamber which is ionized to form the plasma in the chamber; and

(c) a radio frequency wave generator which generates multiple higher mode microwave electric field cusps in the chamber so as to provide the electric field cusps with the magnetic field cusps from the magnet means which overlap in the chamber to provide the electric field essentially perpendicular to the static magnetic field completely over an electron cyclotron resonance region in the plasma adjacent to the magnet means around the longitudinal axis of the chamber in operation of the apparatus wherein there are an even number of magnetic cusps and an even number of at least six said magnet means around the chamber, the number of electric field cusps equals the number of the magnetic field cusps and the mode is selected from TE.sub.nlp, wherein n is one-half of the number of the electric field cusps and p is the number of standing one-half wave lengths along the axis of the cavity and wherein n is at least b 3.

2. The apparatus of claim 1 wherein the generator has a variable power supply which is used to vary the radio frequency waves in the coupler.

3. The apparatus of claim 1 wherein the magnet means are permanent rare earth magnets.

4. The apparatus of claim 1 wherein a nozzle means is provided in the chamber for the plasma along the longitudinal axis leading to a vacuum chamber mounted adjacent to the electrically insulated chamber for providing the reduced pressures in the electrically insulated chamber and wherein a support for a substrate to be exposed to the plasma is provided in the vacuum chamber along the longitudinal axis beneath the nozzle means.

5. The apparatus of claim 1 wherein the magnet means are spaced apart magnetic rings along the axis of the chamber which provide the magnetic field cusps.

6. A plasma generating apparatus which comprises:

(a) a plasma source employing a radio frequency, including UHF or microwave, wave coupler which is metallic and non-magnetic and in the shape of a hollow cavity which can be excited in one or more TE or TM modes of resonance;

(b) an electrically insulated chamber having a central longitudinal axis and mounted in the coupler;

(c) spaced apart permanent magnets mounted around the longitudinal axis of the chamber on a ring of high permeability magnetic material with N and S poles so as to create static magnetic field cusps in the chamber between the poles which aid in confining the plasma in the chamber;

(d) gas supply means for providing a gas which is ionized to form the plasma in the insulated chamber;

(e) a movable antenna means connected to and extending inside the coupler for coupling the radio frequency waves to the coupler;

(f) movable plate means as a sliding short in the cavity which is non-magnetic and metallic mounted perpendicular to the axis and movable towards and away from the chamber;

(g) vacuum means for providing a reduced pressure in the chamber;

(h) a radio frequency wave generator which generates multiple higher mode microwave electric field cusps in the chamber;

wherein movement of the plate means and the antenna means in the coupler achieves the selected TE or TM mode of resonance of the radio frequency wave in the coupler and varies the resonance of the mode, wherein the radio frequency wave applied to the coupler creates and maintains the plasma at the reduced pressure perpendicular to and surrounding the central longitudinal axis in the chamber and wherein the cavity has a length along the longitudinal axis determined by the moveable plate means such that the mode creates the electric field cusps which are essentially perpendicular to the magnetic field cusps and a uniform electron cyclotron resonance region is created and maintained in the chamber adjacent to the magnets around the longitudinal axis of the chamber in the operation of the apparatus wherein there are an even number of magnetic cusps and an even number of at least six said magnets around the chamber, the number of electric field cusps equals the number of the magnetic field cusps and the mode is selected from TE.sub.nlp wherein n is one-half of the number of the electric field cusps and p is the number of standing one-half wave lengths along the axis of the cavity and wherein n is at least b 3.

7. The apparatus of claim 6 wherein the generator has a variable power supply which is used to couple the radio frequency waves in the coupler to maintain the mode with the electromagnetic fields adjacent to each magnet when a plasma is in the chamber.

8. The apparatus of claim 6 wherein a nozzle means is provided in the electrically insulated chamber confining the plasma along the axis leading to a vacuum chamber for providing the reduced pressure in the electrically insulated chamber and wherein a support for a substrate to be exposed to the plasma is provided in the vacuum chamber along the axis of the vacuum chamber beneath the nozzle means.

9. A method for creating a plasma which comprises:

(a) providing a plasma generating apparatus including a plasma source employing a radio frequency, including UHF or microwave, wave coupler of a non-magnetic metal in the shape of a hollow cavity which can be excited in one or more TE or TM modes of resonance, including an electrically insulated chamber having a central longitudinal axis and mounted in the coupler, including a gas supply means for providing a gas which is ionized to form the plasma in the chamber, including a probe connected to and extending inside the coupler for coupling the radio frequency waves to the coupler, wherein the radio frequency wave applied to the coupler creates and maintains the plasma at reduced pressures perpendicular to and surrounding the central longitudinal axis in the chamber, the improvement which comprises: spaced apart magnet means mounted on the apparatus around the longitudinal axis of the chamber with N and S poles so as to create static magnetic field cusps in the chamber between the poles which aid in confining the plasma in the chamber; gas supply means for providing a gas in the chamber; which is ionized to form the plasma in the chamber; and a radio frequency wave generator which generates multiple higher mode microwave electric field cusps in the chamber so as to provide the electric field cusps with the magnetic field cusps from the magnet means which overlap in the chamber to provide the electric field essentially perpendicular to the static magnetic field completely over an electron cyclotron resonance region in the plasma in the chamber in operation of the apparatus; and

(b) creating a plasma in the chamber by introducing the gas into the chamber from the gas supply means at reduced pressure and providing the electron cyclotron resonance region adjacent to the magnet means around the longitudinal axis of the chamber wherein there are an even number of magnetic cusps and an even number of at least six said magnet means around the chamber, the number of electric field cusps equals the number of the magnetic field cusps and the mode is selected from TE.sub.nlp, wherein n is one-half of the number of the electric field cusps and p is the number of standing one-half wave lengths along the axis of the cavity and wherein n is at least 3.

10. The method of claim 9 wherein the pressure is between about 10.sup.-1 and 10.sup.-6 Torr.

11. The method of claim 9 wherein the chamber has a nozzle means and wherein the plasma is moved through the nozzle means from the chamber.

12. The method of claim 9 wherein a substrate to be treated upon is exposed to the plasma inside or outside of the chamber.

13. The method of claim 9 wherein the magnet means are rare earth magnets having a magnetic field strength between about 0.01 and 0.5 Tesla and wherein the radiowave frequency is between about 400 Megahertz and 10 Gigahertz.

14. The method of claim 13 wherein the magnets have a magnetic field with a strength of about 875 gauss in an ECR region of the plasma and the frequency is about 2.45 Gigahertz.

15. The method of claim 9 wherein the magnet means are spaced apart magnetic rings along the axis of the chamber which provide the magnetic field cusps.

16. A method for creating a plasma which comprises:

(a) providing an apparatus which comprises a plasma source employing a radio frequency, including UHF or microwave, wave coupler which is metallic and non-magnetic and in the shape of a hollow cavity which can be excited in one or more TE or TM modes of resonance; and electrically insulated chamber having a central longitudinal axis and mounted in the coupler; spaced apart permanent magnets mounted around the longitudinal axis of the chamber on a ring of high permeability magnetic material with alternate N and S poles so as to create magnetic field cusps in the chamber between the poles which aid in confining the plasma in the chamber; gas supply means for providing a gas which is ionized to form the plasma in the insulated chamber; a movable antenna means connected to and extending inside the coupler for coupling the radio frequency waves to the coupler; movable plate means as a sliding short in the cavity which is non-magnetic and metallic mounted perpendicular to the axis and movable towards and away from the chamber; vacuum means for providing a reduced pressure in the chamber; and a radio frequency wave generator which generates higher mode microwave electric field cusps in the chamber so as to provide the electrical field cusps with the magnetic field cusps from the magnets which overlap to provide the electric field essentially perpendicular to the magnetic field completely over an electron cyclotron resonance region in the plasma in the chamber in operation of the apparatus;

(b) providing a plasma in the chamber by introducing a gas in the chamber at reduced pressures; and

(c) adjusting the movable plate means to maintain the electric field cusps in the chamber with microwave electric field and magnetic cusps being perpendicular to each other, thereby creating and maintaining the electron cyclotron resonance region adjacent to the longitudinal axis of the electrically insulated chamber wherein there are an even number of at least six said magnets around the cavity, the number of electric field cusps equals the number of the magnetic field cusps and wherein the mode is selected from TE.sub.nlp wherein n is one-half of the number of the electric field cusps and p is the number of standing one-half wave lengths along the axis of the cavity and wherein n is at least 3.

17. The method of claim 16 wherein the reduced pressures are between about 10.sup.-1 and 10.sup.-6 Torr.

18. The method of claim 16 wherein the chamber has a nozzle means and wherein the plasma is moved through the nozzle means from the chamber.

19. The method of claim 16 wherein a substrate to be treated upon is exposed to the plasma inside or outside of the chamber.

20. The method of claim 16 wherein the magnets are rare earth magnets having a field strength between about 0.01 and 0.5 Tesla and wherein the frequency is between about 400 Megahertz and 10 Gigahertz.

21. The method of claim 16 wherein the magnets have a field strength of about 875 gauss in the ECR region of the plasma and the frequency is about 2.45 Gigahertz.

Beschreibung
GENERAL DESCRIPTION

The present invention relates to a plasma generating apparatus including a plasma source employing a radio frequency, including UHF or microwave, wave coupler of a non-magnetic metal in the shape of a hollow cavity which can be excited in one or more TE or TM modes of resonance, including an electrically insulated chamber having a central longitudinal axis and mounted in the coupler, including a gas supply means for providing a gas which is ionized to form the plasma in the chamber, including a probe connected to and extending inside the coupler for coupling the radio frequency waves to the coupler, wherein the radio frequency wave applied to the coupler creates and maintains the plasma at reduced pressures perpendicular to and surrounding the central longitudinal axis in the chamber, the improvement which comprises: a spaced apart magnet means mounted on the apparatus around the longitudinal axis of the chamber with N and S poles so as to create static magnetic field cusps in the chamber between the poles which aid in confining the plasma in the chamber; gas supply means adjacent to the magnet means for providing a gas in the chamber which is ionized to form the plasma in the chamber; and a radio frequency wave generator which generates higher mode microwave electric field cusps in the chamber so as to provide the electric field cusps and magnetic field cusps which overlap in the chamber to provide the electric field essentially perpendicular to the static magnetic field completely over an electron cyclotron resonance region in the plasma in the chamber in operation of the apparatus.

Further, the present invention relates to a method for creating a plasma generating apparatus including a plasma source employing a radio frequency, including UHF or microwave, wave coupler of a non-magnetic metal in the shape of a hollow cavity which can be excited in one or more TE or TM modes of resonance, including an electrically insulated chamber having a central longitudinal axis and mounted in the coupler, including a gas supply means for providing a gas which is ionized to form the plasma in the chamber, including a probe connected to and extending inside the coupler for coupling the radio frequency waves to the coupler wherein reduced pressures are maintained, wherein the radio frequency wave applied to the coupler creates and maintains the plasma at reduced pressures perpendicular to and surrounding the central longitudinal axis in the chamber, the improvement which comprises: a spaced apart magnet means mounted on the apparatus around the longitudinal axis of the chamber with N and S poles so as to create static magnetic field cusps in the chamber between the poles which aid in confining the plasma in the chamber; gas supply means for providing a gas in the chamber which is ionized to form the plasma in the chamber; and a radio frequency wave generator which generates higher mode microwave electric field cusps in the chamber so as to provide the electric field cusps and magnetic field cusps which overlap in the chamber to provide the electric field essentially perpendicular to the static magnetic field completely over an electron cyclotron resonance region in the plasma in the chamber in operation of the apparatus; and creating a plasma in the chamber by introducing the gas into the chamber from the gas supply means at reduced pressure and providing the electron cyclotron resonance region in the chamber.

ECR coupling takes place when the exciting sinusoidal electric field

E=E.sub.o ε.sup.j ω.sup.t

is:

(1) perpendicular to the static magnetic field

(2) ω=ω.sub.ce =electron cyclotron frequency =eB/Me (where e=charge of an electron, B=strength of a static magnetic field, m.sub.e =mass of an individual electron, and ω=excitation frequency)

(3) υ.sub.e <<ω=ω.sub.ce

(where υ.sub.e =the effective collision frequency for electrons)

In practice, ECR discharges make use of non-uniform static magnetic fields. Thus, the condition ω=ω.sub.ce is achieved in a thin surface within the discharge volume. This surface is referred to as a ECR layer region, or surface and is shown in FIGS. 1 to 9 as 60. Thus, condition (2) is achieved in a surface within the discharge. However, for ECR acceleration all three of the above conditions must be met. υ.sub.e <<ω is achieved at low pressures. The remaining condition, i.e. condition (1), requires that the microwave electric field have a component perpendicular to the magnetic field. This invention is concerned with the optimal adjustment of the microwave electric field with respect to the static magnetic field on and around an ECR surface. This invention uses cavity modes where field patterns are spatially adjusted so that the electric field is everywhere perpendicular to B on an ECR surface and also chooses modes where the electric field intensity is concentrated on a ECR surface.

Thus, the TE.sub.nlp modes are chosen because their field strengths are the most intense on the outer circumference of the cavity where n is 1/2 of the number of electric field cusps and p is the number of standing 1/2 wave lengths along the axis of the cavity. These modes have their highest field strengths exactly where the ECR surfaces are located. In addition, this mode pattern can be adjusted with respect to the static magnetic fields so that the electric field is everywhere perpendicular to the magnetic field on the ECR layer. This produces efficient microwave coupling over and around the entire ECR layer. For optimal matching between the electric field cusps and magnetic field cusps, 2n magnets are needed for TE.sub.nlp excitation.

The three above mentioned conditions are necessary for ECR acceleration of electrons, and are usually achieved at low pressures in a physical volume of the discharge around the ECR surface. This volume is referred to as the ECR acceleration volume, i.e. V.sub.ECR.

The electrons which are accelerated in the ECR volume move throughout the discharge volume and excite and ionize the neutral gas ions. Thus, if the mean free path of the electrons is much larger than the discharge dimensions, then ions and excited species are created throughout the discharge volume and some electrons move into and out of the ECR volume receiving multiple accelerations between collisions. The microwave power absorption by the electron gas takes place primarily within a specific localized ECR volume (or surface) inside of the discharge. Therefore in order to produce efficient microwave energy transfer to the plasma, the electric field should be focused on and must be controlled in the ECR volume. In addition, if discharge uniformity is important, the ECR electron accelerating volumes should be adjusted in size and position to produce a uniform discharge.

SPECIFIC DESCRIPTION

FIGS. 1 to 4 show the preferred improved plasma generating apparatus of the present invention. The basic construction of the apparatus without the magnet mountings is described in U.S. Pat. Nos. 4,507,588 and 4,727,293. It will be appreciated that various non-magnetic materials can be used in the construction of the apparatus, such as copper, brass, aluminum, silver, gold, platinum, non-magnetic stainless steel and the like.

The apparatus preferably includes copper or brass cylinder 10 forming the microwave cavity 11 with a copper or brass sliding short 12 for adjusting the length of the cavity 11. Silver plated copper brushes 13 electrically contact the cylinder 10. The brushes 13 are provided entirely around the circumference of the sliding short 12; however, in FIG. 1 only two are shown. Moveable excitation probe or antenna 14 provides impedance tuning of the microwave energy in the cavity 11. The probe 14 is mounted in cavity 11 by brass or copper conduit 21. Radial penetration of the probe 14 into the cavity 11 varies the coupling to the plasma in the cavity 11. Sliding short 12 is moved back and forth in cavity 11 to aid in tuning the microwave by rods 22 using conventional adjustment means (not shown) such as described in U.S. Pat. No. 4,507,588.

A quartz dish or chamber 15 preferably shaped like a round bottomed flask defines the plasma region 16 along with a stainless steel base 30. Gas is fed by tube 19 to annular ring 18 to inlets 20 and then flows into the plasma region 16. Optionally a cooling line 42 is provided which cools the base 30. The cylinder 10 slides onto the base 30 and is held in place on a ring 30a on base 30 by copper or brass ring 10a secured to the cylinder 10. The ring 10a is held in place on base 30 by copper or brass bolts 33. This construction allows the base 30 and chamber 15 to be removed from the cylinder 10. A vacuum chamber 35 is connected to the base 30 and provides the vacuum in region 16 by vacuum means (not shown).

In the improved plasma apparatus, the chamber 15 and plasma region 16 are surrounded by magnets 34. In the preferred embodiment, six (6) or more equally spaced magnets 34 surround the chamber 15 around axis a--a. The magnets 34 provide interconnected magnetic field cusps 16a in the plasma region 16 of the chamber 15 as shown in FIG. 2A. The magnets 34 reduce particle diffusion losses from region 16 inside the chamber 15. The magnetic field strength decreases as the longitudinal axis a--a and center of the plasma region 16 is approached because of the positioning of the magnets 34.

The magnets 34 are mounted on a high magnetic permeability (iron) ring 37 around the ring 31 and held in place by magnetic attraction. Gases pass out the opening or nozzle 41 from the plasma region 16. The nozzle 41 is optional and need not be used.

FIG. 2 shows the higher electric field cusps 16b used for electron cyclotron resonance. FIG. 2A shows the magnetic field cusps 16a. FIG. 5 shows the cusps 16a and 16b overlapping. FIG. 4 shows the various higher electromagnetic fields which can be selected.

FIGS. 3 and 3A show a rectangular cross-sectioned applicator 50 defining a microwave cavity 51 and with magnets 52 around the inside of the applicator 50 shielded by plates 53. The electromagnetic field cusps 51a for a high mode (TE.sub.42) are shown in FIG. 3. FIG. 3A shows the magnetic field cusps 51b. As can be seen the field cusps 51a 51b overlap so as to provide improved ECR.

FIG. 6 shows the support 45 for sample or substrate 46. The support is connected to rf or dc bias 47 to accelerate ions to the substrate. FIG. 7 shows a shorter support 45a for sample 46 which is connected to bias 47. FIG. 8 shows a grid 48 which is used to aid in extracting ions from the cavity 16 to impinge on substrate 46. FIG. 9 shows the angle φ for movement of the magnets 34 relative to the position of the probe 14 which is shown by an arrow to provide the intersecting fields 16a and 16b. FIGS. 10 and 11 show spaced apart ring magnets 50 and 51 as an alternative embodiment. The magnetic field is between the ring magnets 50 and 51. In this configuration the ECR region is uniform around axis a--a and the field patterns are of the type shown, such as the TE.sub.onp modes. FIG. 12 shows the usual alignment of the electromagnetic fields 16b relative to the probe 14. The magnets 50 and 51 or 34 are moved so that the electric field is perpendicular to the magnetic field on an ECR surface.

In the preferred applicator as shown in FIGS. 1, 2 and 5 to 9, an 8" (20.32 cm) cylindrical discharge volume 11 is surrounded by fourteen magnets 34 with alternating poles. The magnetic fields are produced by pairs of 2 inch (5.08 cm) square rare earthmmagnets each with a pole face free magnetic field strength in excess of 3 kG. Thus, these magnets produce a strong multicusp magnetic field adjacent to the inner surface of the eight inch diameter discharge. An ECR surface, which requires a 875 G field strength for 2.45 GHz excitation, is produced in the discharge volume. This surface, which is shown as a solid surface (or volume) in FIGS. 5 to 9, is an undulating curved thin volume located approximately 2-31/2 cm from the cylindrical wall of the chamber 15.

The discharge volume of FIG. 1 can be excited with many TE or TM circular waveguide modes. The electromagnetic field patterns of a number of TE and TM circular waveguide modes are shown in FIG. 4. A careful examination of both the TE and TM modes reveals that almost any mode will produce an electric field that is perpendicular to the static magnetic field in some part of the ECR volume shown in FIG. 1. However, some modes can produce a more complete and uniform excitation of the ECR volume, i.e. excitation completely around the discharge circumference. A specific mode which can produce an excellent overlap between the static magnetic field pattern and the excited electromagnetic field pattern is the TE.sub.71 mode. This mode has two features that are similar to the multicusp static magnetic field pattern: (1) the strongest fields (electric in this case) are located adjacent to the outer boundary of the wall of the chamber 15, and (2) the mode pattern has fourteen electric field cusps. Thus strong electric fields can be positioned so that the electric and magnetic fields are everywhere perpendicular inside the ECR volume producing a uniform layer of ECR acceleration. The input gas feed ring 18 has fourteen small gas inlet holes forcing the input gas to flow through the ECR excitation volume mixing the unionized feed gas with the accelerated electrons. This method of gas feed causes the input gas to be uniformly and efficiently ionized around the discharge.

This method of ECR discharge excitation is particularly useful when attempting to create large diameter discharges (>5 inches (12.7 cm)) with 2.45 GHz. For example, waveguides with 12-18 inch (30.48 to 45.72 cm) diameters can be used to excite a TE.sub.71 mode which is incident on a 6-12 inch (15.24-30.48 cm) discharge. Waveguide applicators will produce the correct coupling of the TE.sub.71 mode to the cylindrical discharge. However, if the TE.sub.71 mode is excited, many more lower order TE and TM modes will also exist. Their presence will produce nonuniform, undesirable ECR volume excitations. Thus a tunable cylindrical cavity applicator has a number of advantages. First, the internally tunable cavity can help match any waveguide mode to the cylindrical discharge. Secondly, by adjusting the cavity length the unwanted mode excitations can be prevented. Thus, it is possible to single mode excite and control the desired electric field patterns for optimal ECR operation.

The ECR discharge loaded cavity is tuned and matched to a TE.sub.nlp resonance with a specific input power. Then as the input power is slowly increased and/or decreased the discharge loaded cavity is retuned to a match in the TE.sub.nlp mode. Thus the power absorbed in the ECR volume can be carefully varied and controlled.

An essential part of the present invention is to rotate the TE.sub.nlp mode pattern with respect to the angle φ of the cylindrical cavity such that the static magnetic fields are everywhere perpendicular to the electrical fields. This is done by physically rotating the magnets 34 with respect to the probe 14.

The magnets preferably have a field strength between about 0.01 and 5 Tesla. The radio frequency is between about 400 Megahertz and 10 Gigahertz, preferably 915, 2.45 and approved heating frequencies. The pressure in the chamber is preferably between about 10.sup.-1 and 10.sup.-6 Torr.

It is intended that the foregoing description be only illustrative of the present invention and that the present invention be limited only by the hereinafter appended claims.

IN THE DRAWINGS

FIG. 1 is a front cross-sectional view of the improved radio frequency wave coupling apparatus wherein gas feed tubes 19 feed gas into the plasma region 16 of the chamber 15 through inlets 20 which are adjacent to each magnet 34.

FIG. 1A is a plan cross-sectional view along line 1A--1A of FIG. 1 showing the plasma region 16.

FIG. 2 is a plan cross-sectional view of higher mode microwave electric field lines or cusps 16b for the TE.sub.71 mode exciting the plasma region 16 of the apparatus of FIG. 1.

FIG. 2A is a plan cross-sectional view of the static magnetic field lines 16a in the plasma region 16 of the apparatus of FIG. 1. The magnetic field lines 16a are to be positioned to be essentially perpendicular to the electrical field lines 16b in the chamber 15 to produce ECR in a plasma.

FIG. 3 is a plan cross-sectional view of a rectangular cavity 51 in an apparatus showing the microwave electric field cusps 51a for the TE.sub.42 mode in the apparatus which are essentially perpendicular to the magnetic field cusps 51b.

FIG. 3A is a plan cross-sectional view through the rectangular apparatus 51 of FIG. 3 showing the magnetic field cusps 51b.

FIG. 4 shows various higher modes in a cross-section of empty circular cavity of an apparatus as shown in FIG. 1. As can be seen, FIG. 2 shows the TE.sub.71 mode.

FIG. 5 is a schematic perspective view of a section of the magnets 34 showing the overlapping of the electric field cusps 16b and the static magnetic field cusps 16a. The result is that the microwave electric fields and the static magnetic fields are everywhere essentially perpendicular in the ECR region. This produces an accelerating force on the electrons over the entire ECR surface 60 in the plasma.

FIG. 6 is a front cross-sectional view of a resonant radio frequency wave generating apparatus for processing a substrate 46 in plasma region 16 of the chamber 15.

FIG. 7 shows the same apparatus as FIG. 6 wherein the substrate 46 to be treated is outside of the plasma region 16.

FIG. 8 is a front cross-sectional view of the apparatus shown in FIG. 6 with double accelerating grids or screens for accelerating ions from the plasma onto the substrate 46.

FIG. 9 is a plan cross-sectional view along line 9--9 of FIG. 8. The angle φ of the magnets 34 is changed relative to the antenna 14 shown by the position of the arrow.

FIG. 10 is a front cross-sectional view of an apparatus wherein spaced apart rings of magnets 50 and 51 are used to generate ECR 61 in the plasma region 16 of the chamber 15.

FIG. 11 is a plan cross-sectional view along line 10--10 of FIG. 10.

FIG. 12 is a plan view of the apparatus of FIG. 1 showing the position of the electric field cusps 16b relative to an antenna 14 which couples the field into the plasma region 16.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The present invention relates to an improved resonant radio frequency wave coupler apparatus for creating and maintaining uniform electron cyclotron resonance (ECR) in a low pressure plasma. In particular, the present invention relates to an apparatus where magnetic fields are essentially perpendicular to electric fields of higher modes so as to create and maintain uniform ECR at low pressures and more particularly to an apparatus which creates a plasma with a large processing surface area.

(2) Prior Art

U.S. Pat. No. 4,727,293 to Asmussen, Reinhard and Dahimene describes a resonant radio frequency wave coupler apparatus which creates and maintains ECR. In this apparatus no attempt was made to optimally match the static magnetic and microwave electric fields in any particular manner. The problem was to provide an improved apparatus with more uniform ECR.

OBJECTS

It is therefore an object of the present invention to provide an apparatus which creates uniform ECR. Further, it is an object of the present invention to provide an apparatus which is relatively simple to construct and operate. These and other objects will become apparent from the following and the drawings.

Patentzitate
Zitiertes PatentEingetragen Veröffentlichungsdatum Antragsteller Titel
US450758828. Febr. 198326. März 1985Board Of Trustees Operating Michigan State UniversityIon generating apparatus and method for the use thereof
US458566816. Aug. 198429. Apr. 1986Michigan State UniversityMethod for treating a surface with a microwave or UHF plasma and improved apparatus
US463056615. Nov. 198523. Dez. 1986Board Of Trustees Operating Michigan State UniversityMicrowave or UHF plasma improved apparatus
US471358526. Sept. 198615. Dez. 1987Hitachi, Ltd.Ion source
US47272937. Apr. 198623. Febr. 1988Board Of Trustees Operating Michigan State UniversityPlasma generating apparatus using magnets and method
US47453375. Juni 198617. Mai 1988Centre National De La Recherche ScientifiqueMethod and device for exciting a plasma using microwaves at the electronic cyclotronic resonance
US494001513. Juli 198910. Juli 1990Kabushiki Kaisha Kobe Seiko ShoPlasma reactor for diamond synthesis
US494708525. März 19887. Aug. 1990Mitsubishi Denki Kabushiki KaishaPlasma processor
Referenziert von
Zitiert von PatentEingetragen Veröffentlichungsdatum Antragsteller Titel
US518944617. Mai 199123. Febr. 1993International Business Machines CorporationPlasma wafer processing tool having closed electron cyclotron resonance
US521632922. Jan. 19921. Juni 1993Societe A Responsabilite Limitee: Metal ProcessDevice for distributing a microwave energy for exciting a plasma
US522574026. März 19926. Juli 1993General AtomicsMethod and apparatus for producing high density plasma using whistler mode excitation
US52412443. März 199231. Aug. 1993Proel Tecnologie S.P.A.Cyclotron resonance ion engine
US528021916. Apr. 199318. Jan. 1994Materials Research CorporationCluster tool soft etch module and ECR plasma generator therefor
US529237014. Aug. 19928. März 1994Martin Marietta Energy Systems, Inc.Coupled microwave ECR and radio-frequency plasma source for plasma processing
US536101628. Jan. 19931. Nov. 1994General AtomicsHigh density plasma formation using whistler mode excitation in a reduced cross-sectional area formation tube
US540135127. Jan. 199428. März 1995Nec CorporationRadio frequency electron cyclotron resonance plasma etching apparatus
US543378928. Jan. 199318. Juli 1995Hitachi, Ltd.Methods and apparatus for generating plasma, and semiconductor processing methods using mode restricted microwaves
US544420726. März 199322. Aug. 1995Kabushiki Kaisha ToshibaPlasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
US544943428. März 199412. Sept. 1995University Of North Carolina At Chapel HillMethod for plasma processing at high pressure
US544997720. Okt. 199412. Sept. 1995Matsushita Electric Industrial Co., Ltd.Apparatus and method for generating plasma of uniform flux density
US545729827. Juli 199310. Okt. 1995Tulip Memory Systems, Inc.Coldwall hollow-cathode plasma device for support of gas discharges
US547042325. Jan. 199428. Nov. 1995Board Of Trustees Operating Michigan State UniversityMicrowave pultrusion apparatus and method of use
US55897376. Dez. 199431. Dez. 1996Lam Research CorporationPlasma processor for large workpieces
US559205517. Okt. 19957. Jan. 1997Proel Tecnologie S.P.A.Radio-frequency plasma source
US56464892. Mai 19958. Juli 1997Hitachi, Ltd.Plasma generator with mode restricting means
US56518251. März 199529. Juli 1997Nissin Electric Co., Ltd.Plasma generating apparatus and plasma processing apparatus
US566074419. Juni 199526. Aug. 1997Kabushiki Kaisha ToshibaPlasma generating apparatus and surface processing apparatus
US568679620. Dez. 199511. Nov. 1997International Business Machines CorporationIon implantation helicon plasma source with magnetic dipoles
US571879521. Aug. 199517. Febr. 1998Applied Materials, Inc.Radial magnetic field enhancement for plasma processing
US573414323. Okt. 199531. März 1998Matsushita Electric Industrial Co., Ltd.Microwave plasma torch having discretely positioned gas injection holes and method for generating plasma
US576762820. Dez. 199516. Juni 1998International Business Machines CorporationHelicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
US580403310. März 19938. Sept. 1998Hitachi, Ltd.Microwave plasma processing method and apparatus
US60107554. Juni 19974. Jan. 2000Shimadzu CorporationMethod and apparatus for forming thin films using dual ECR plasma generators
US607778725. Sept. 199520. Juni 2000Board Of Trustees Operating Michigan State UniversityMethod for radiofrequency wave etching
US654178125. Juli 20001. Apr. 2003Axcelis Technologies, Inc.Waveguide for microwave excitation of plasma in an ion beam guide
US675061512. März 200315. Juni 2004Jusung Engineering Co., LtdPlasma apparatus including plasma-measuring device
US675980825. Okt. 20026. Juli 2004Board Of Trustees Of Michigan State UniversityMicrowave stripline applicators
US705926820. Dez. 200213. Juni 2006Tokyo Electron LimitedMethod, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
US721042412. Mai 20041. Mai 2007Samsung Electronics Co., Ltd.High-density plasma processing apparatus
US731619914. Mai 20028. Jan. 2008Applied Materials, Inc.Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
US737463626. Juli 200220. Mai 2008Applied Materials, Inc.Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
US741956730. März 20052. Sept. 2008Shin-Etsu Chemical Co., Ltd.Plasma processing apparatus and method
US742265413. Febr. 20049. Sept. 2008Applied Materials, Inc.Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
US745833510. Okt. 20022. Dez. 2008Applied Materials, Inc.Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
US749859228. Juni 20063. März 2009Wisconsin Alumni Research FoundationNon-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams
US775763322. Dez. 200520. Juli 2010Tokyo Electron LimitedMethod, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
US78758673. Dez. 200825. Jan. 2011Wisconsin Alumni Research FoundationNon-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams
US78791864. Sept. 20081. Febr. 2011Applied Materials, Inc.Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
US795598623. Febr. 20067. Juni 2011Applied Materials, Inc.Capacitively coupled plasma reactor with magnetic plasma control
US804880610. März 20061. Nov. 2011Applied Materials, Inc.Methods to avoid unstable plasma states during a process transition
CN100394535C8. Mai 200411. Juni 2008Samsung Electronics CorpHigh-density plasma processing apparatus
WO2009065016A114. Nov. 200822. Mai 2009Applied Materials, Inc.Rpsc and rf feedthrough