US5201841A - Thermal delay non-destructive bond integrity inspection - Google Patents
Thermal delay non-destructive bond integrity inspection Download PDFInfo
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- US5201841A US5201841A US07/838,643 US83864392A US5201841A US 5201841 A US5201841 A US 5201841A US 83864392 A US83864392 A US 83864392A US 5201841 A US5201841 A US 5201841A
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- 230000001066 destructive effect Effects 0.000 title claims abstract description 11
- 238000007689 inspection Methods 0.000 title claims description 3
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000012546 transfer Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000011156 evaluation Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 2
- 230000001934 delay Effects 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 14
- 229910000679 solder Inorganic materials 0.000 description 10
- 238000005259 measurement Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2418—Probes using optoacoustic interaction with the material, e.g. laser radiation, photoacoustics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/12—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to investigating the properties, e.g. the weldability, of materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/72—Investigating presence of flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/022—Environment of the test
- G01N2203/0222—Temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/026—Specifications of the specimen
- G01N2203/0296—Welds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This invention relates, in general, to bond testing, and more particularly, to testing an electrical connection which is formed when a package lead is bonded to a pad area on a semiconductor device.
- a high pin count package currently offered is known as a TAB package.
- the TAB package offers very tightly spaced leads which couple to a semiconductor device. Solder bumps are placed on pad areas of the semiconductor device. The TAB package leads align with the pad areas of the semiconductor device. The TAB leads are aligned to the pads such that a portion of the lead is placed above the solder bumps. The TAB package is lowered until the leads make contact to the solder bumps. A thermal cycle melts the solder bumps, coupling the leads to the semiconductor pads. Two interfaces are created, a TAB lead to solder bump, and solder bump to pad area, either of which could compromise quality of the device. An electrical test only confirms that a connection exists. Other methods must be used to determine the bond quality. The current test most widely used to measure a TAB bond is a destructive test. A package lead is physically separated from the solder and pad. The force needed to separate the bond is used to measure the bond integrity. By inference, the destructive test determines the quality of the remaining bonds.
- the method should be non-destructive, allow for individual bond testing, and be fast enough for use in a production environment.
- this invention provides a non-destructive test for evaluating the quality of a bond.
- a thermal gradient is created across a bond area to be evaluated. Temperature changes are recorded as heat is transferred through the bond area.
- the bond under evaluation can be characterized good or bad depending on the measured results correlation to known data of good and bad bonds.
- An indirect method is used to determine temperature changes as heat is transferred through the bond area.
- the temperature changes can be calculated by utilizing an impact source which creates a mechanical wave through the package lead.
- the speed at which the wave travels can be related to temperature.
- the single figure is an illustration of a bond being tested in accordance with the present invention.
- the single figure illustrates the preferred embodiment of the method for sensing the quality of at least one bond.
- a semiconductor die 11 has a pad area 12, which is bonded to a package lead 14 by a solder bump 13.
- the single figure illustrates two bond interfaces. A first bond interface is formed where pad area 12 contacts solder bump 13. A second bond interface is formed where solder bump 13 contacts package lead 14. These two bond interfaces are in series between die 11 and package lead 14.
- a heat source 27 heats a first input area indicated by an arrow 18.
- Heat source 27 serves as a means for imparting heat.
- the first input area is located a predetermined distance from the bond interfaces to be evaluated as indicated by a double headed arrow 17.
- the predetermined distance indicated by double headed arrow 17 is critical to insure measurements can be repeated under similar conditions.
- a transient or periodic heating of the first input area can be used in the method.
- Heat source 27 can be a laser, infra-red beam, or an electron beam. It is possible to eliminate heat source 27 by using heat at the bond create during the bonding process, if the bond test is performed immediately following the bonding process.
- a thermal gradient is formed by heat source 27 across the bond interfaces. Heat transfer is monitored by a means for sensing temperature 29 at an output area indicated by an arrow 23.
- the output area is a predetermined distance from the bond interfaces as indicated by a double headed arrow 21.
- the predetermined distance indicated by double headed arrow 21 is critical to insure measurements can be repeated under similar conditions. It is critical to note that heat is transferred through the bond interfaces before reaching the output area where temperature changes are sensed. Also, heat is transferred serially through the first and second bond interfaces. Alternate paths which can circumvent the bond interfaces and increase thermal transfer to the output area should not be allowed.
- Means for sensing temperature 29 can be a laser or an infra-red beam.
- a key factor in bond integrity is contact area at the bond interface. Ideally, both surfaces forming the bond will completely contact one another. A poor bond occurs when voids which reduce contact area at the bond interface occur. Heat transfer can be used as the method for sensing the quality of a bond because there is a direct correlation between heat transfer through the bond interface and the contact area at the bond interface. Larger contact area at the bond interface allows heat to be transferred faster. A comparison must be made between measurements taken on the tested bonds and data of known good and bad bonds to determine the quality of the tested bonds. The data from known good and bad bonds should be derived from identical bond types and measurements taken under identical conditions to preserve direct correlation.
- thermal time delay non-destructive bond integrity inspection involves sensing temperature at the output area with respect to time, it is not necessary to sense temperature directly. Depending on the equipment available it may be more accurate to use a different means of measurement from which the temperature of package lead 14 can be calculated.
- One such indirect method uses a mechanical disturbance. A mechanical disturbance can be created easily and monitored over time. It is well known that the speed at which a mechanical wave travels through a known material is a function of the material temperature. Average temperature of package lead 14 and temperature changes over time can be calculated using this technique. Like the direct approach, the indirect approach compares the measured data with data from known good and bad bonds.
- an indirect method for sensing temperature at the output area is used.
- An impact source 26 is used to create a mechanical disturbance (or vibration) at a second input area indicated by an arrow 19.
- the second input area is a predetermined distance from the output area as indicated by double headed arrow 28.
- a vibration sensing means 31 is used to monitor waves set up by impact source 26 at the output area as indicated by an arrow 24.
- Impact source 26 can be a laser, ultrasound source, or an e-beam.
- vibration sensing means 31 is a reflective probing laser which detects the waves created by impact source 26 by monitoring a reflection of a laser beam focused at the output area.
- Two equations are used in the indirect temperature sensing method to calculate the temperature of package lead 14. The first equation calculates the wave speed of the vibration through package lead 14. The second equation allows us to calculate the temperature of package lead 14 since the material and wave speed is known.
- the reference calibration temperature T' is an ambient temperature.
- the reference calibration speed of wave at T' is the speed of a wave measured at the ambient temperature.
- Changes in package lead 14 temperature can be calculated from the two equations as heat is transferred through the bond region to package lead 14. Measured data is compared against data from known good and bad bonds (measured under identical conditions). How the measured time delay data compares with the known good and bad bond data determines the quality of the bond. Measuring temperature directly at the output area can lead to error due to thermal noise. Using the mechanical vibration technique to calculate temperature eliminates the thermal noise problem and provides a measurement of increased accuracy.
- the thermal technique is non-destructive, provides fast bond testing which can be used in a production environment, it can be completely automated, and is applicable to most bonds (TAB, wire, die, SMD, etc.) used in semiconductor packaging.
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US07/838,643 US5201841A (en) | 1992-02-20 | 1992-02-20 | Thermal delay non-destructive bond integrity inspection |
Applications Claiming Priority (1)
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US07/838,643 US5201841A (en) | 1992-02-20 | 1992-02-20 | Thermal delay non-destructive bond integrity inspection |
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US5201841A true US5201841A (en) | 1993-04-13 |
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US07/838,643 Expired - Fee Related US5201841A (en) | 1992-02-20 | 1992-02-20 | Thermal delay non-destructive bond integrity inspection |
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Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5407275A (en) * | 1992-03-31 | 1995-04-18 | Vlsi Technology, Inc. | Non-destructive test for inner lead bond of a tab device |
US5733041A (en) * | 1995-10-31 | 1998-03-31 | General Electric Company | Methods and apparatus for electrical connection inspection |
WO2000060337A1 (en) * | 1999-04-06 | 2000-10-12 | Thermal Wave Imaging, Inc. | Method and apparatus for detecting kissing unbond defects |
US6181431B1 (en) | 1997-12-19 | 2001-01-30 | Bernard Siu | System and method for laser ultrasonic bond integrity evaluation |
US6236049B1 (en) | 1999-09-16 | 2001-05-22 | Wayne State University | Infrared imaging of ultrasonically excited subsurface defects in materials |
EP1182449A1 (en) * | 2000-08-21 | 2002-02-27 | Motorola, Inc. | Apparatus and method for managing an integrated circuit |
US6399948B1 (en) | 1999-09-16 | 2002-06-04 | Wayne State University | Miniaturized contactless sonic IR device for remote non-destructive inspection |
US6428202B1 (en) * | 1999-03-12 | 2002-08-06 | Nec Corporation | Method for inspecting connection state of electronic part and a substrate, and apparatus for the same |
US6437334B1 (en) | 1999-09-16 | 2002-08-20 | Wayne State University | System and method for detecting cracks in a tooth by ultrasonically exciting and thermally imaging the tooth |
US20020167987A1 (en) * | 2000-08-25 | 2002-11-14 | Art Advanced Research Technologies Inc. | Detection of defects by thermographic analysis |
US6491426B1 (en) * | 2001-06-25 | 2002-12-10 | Sbs Technologies Inc. | Thermal bond verification |
US6575620B1 (en) * | 2000-02-15 | 2003-06-10 | The United States Of America As Represented By The Secretary Of The Air Force | Method and device for visually measuring structural fatigue using a temperature sensitive coating |
US6593574B2 (en) | 1999-09-16 | 2003-07-15 | Wayne State University | Hand-held sound source gun for infrared imaging of sub-surface defects in materials |
US6786098B2 (en) * | 2000-01-20 | 2004-09-07 | Airbus Uk Limited | Material analysis |
US20070140310A1 (en) * | 2003-01-20 | 2007-06-21 | Rolton Peter E | Identification of materials by non destructive testing |
US20110016975A1 (en) * | 2009-07-24 | 2011-01-27 | Gregory Scott Glaesemann | Method and Apparatus For Measuring In-Situ Characteristics Of Material Exfoliation |
Citations (14)
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---|---|---|---|---|
US3592050A (en) * | 1969-06-30 | 1971-07-13 | Atomic Energy Commission | Method of detecting inhomogeneities in ceramics |
US4007631A (en) * | 1975-08-18 | 1977-02-15 | Western Electric Company, Inc. | Method and apparatus for evaluating welds using stress-wave emission techniques |
GB2013344A (en) * | 1977-10-28 | 1979-08-08 | Balteau Sonatest Ltd | Ultrasonic flaw detection |
US4287766A (en) * | 1979-09-26 | 1981-09-08 | Battelle Development Corporation | Inspection of solder joints by acoustic impedance |
US4289030A (en) * | 1979-08-01 | 1981-09-15 | Rockwell International Corporation | Nondestructive testing utilizing horizontally polarized shear waves |
US4513384A (en) * | 1982-06-18 | 1985-04-23 | Therma-Wave, Inc. | Thin film thickness measurements and depth profiling utilizing a thermal wave detection system |
US4521118A (en) * | 1982-07-26 | 1985-06-04 | Therma-Wave, Inc. | Method for detection of thermal waves with a laser probe |
US4522510A (en) * | 1982-07-26 | 1985-06-11 | Therma-Wave, Inc. | Thin film thickness measurement with thermal waves |
US4641527A (en) * | 1984-06-04 | 1987-02-10 | Hitachi, Ltd. | Inspection method and apparatus for joint junction states |
US4710030A (en) * | 1985-05-17 | 1987-12-01 | Bw Brown University Research Foundation | Optical generator and detector of stress pulses |
JPS6391554A (en) * | 1986-10-06 | 1988-04-22 | Nippon Steel Corp | Method and apparatus for ultrasonic flaw detection of welded part in steel pipe |
US4750368A (en) * | 1987-05-26 | 1988-06-14 | Weyerhaeuser Company | Bond strength measurement of composite panel products |
JPS63304159A (en) * | 1987-06-05 | 1988-12-12 | Koden Electronics Co Ltd | Method for measuring depth of crack |
US4972720A (en) * | 1989-09-20 | 1990-11-27 | The United States Of America As Represented By The Secretary Of Commerce | Thermal technique for determining interface and/or interply strength in composites |
-
1992
- 1992-02-20 US US07/838,643 patent/US5201841A/en not_active Expired - Fee Related
Patent Citations (14)
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US3592050A (en) * | 1969-06-30 | 1971-07-13 | Atomic Energy Commission | Method of detecting inhomogeneities in ceramics |
US4007631A (en) * | 1975-08-18 | 1977-02-15 | Western Electric Company, Inc. | Method and apparatus for evaluating welds using stress-wave emission techniques |
GB2013344A (en) * | 1977-10-28 | 1979-08-08 | Balteau Sonatest Ltd | Ultrasonic flaw detection |
US4289030A (en) * | 1979-08-01 | 1981-09-15 | Rockwell International Corporation | Nondestructive testing utilizing horizontally polarized shear waves |
US4287766A (en) * | 1979-09-26 | 1981-09-08 | Battelle Development Corporation | Inspection of solder joints by acoustic impedance |
US4513384A (en) * | 1982-06-18 | 1985-04-23 | Therma-Wave, Inc. | Thin film thickness measurements and depth profiling utilizing a thermal wave detection system |
US4521118A (en) * | 1982-07-26 | 1985-06-04 | Therma-Wave, Inc. | Method for detection of thermal waves with a laser probe |
US4522510A (en) * | 1982-07-26 | 1985-06-11 | Therma-Wave, Inc. | Thin film thickness measurement with thermal waves |
US4641527A (en) * | 1984-06-04 | 1987-02-10 | Hitachi, Ltd. | Inspection method and apparatus for joint junction states |
US4710030A (en) * | 1985-05-17 | 1987-12-01 | Bw Brown University Research Foundation | Optical generator and detector of stress pulses |
JPS6391554A (en) * | 1986-10-06 | 1988-04-22 | Nippon Steel Corp | Method and apparatus for ultrasonic flaw detection of welded part in steel pipe |
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JPS63304159A (en) * | 1987-06-05 | 1988-12-12 | Koden Electronics Co Ltd | Method for measuring depth of crack |
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Title |
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Gilmore, et al., "High-Frequency Ultrasonic Testing of Bonds: Application to Silicon Power Devices, " Materials Evaluation, pp. 65-72 (Jan. 1979). |
Gilmore, et al., High Frequency Ultrasonic Testing of Bonds: Application to Silicon Power Devices, Materials Evaluation, pp. 65 72 (Jan. 1979). * |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5407275A (en) * | 1992-03-31 | 1995-04-18 | Vlsi Technology, Inc. | Non-destructive test for inner lead bond of a tab device |
US5733041A (en) * | 1995-10-31 | 1998-03-31 | General Electric Company | Methods and apparatus for electrical connection inspection |
US6490047B2 (en) | 1997-12-19 | 2002-12-03 | Bernard K. Siu | System and method for laser ultrasonic bond integrity evaluation |
US6181431B1 (en) | 1997-12-19 | 2001-01-30 | Bernard Siu | System and method for laser ultrasonic bond integrity evaluation |
US6428202B1 (en) * | 1999-03-12 | 2002-08-06 | Nec Corporation | Method for inspecting connection state of electronic part and a substrate, and apparatus for the same |
US7083327B1 (en) * | 1999-04-06 | 2006-08-01 | Thermal Wave Imaging, Inc. | Method and apparatus for detecting kissing unbond defects |
WO2000060337A1 (en) * | 1999-04-06 | 2000-10-12 | Thermal Wave Imaging, Inc. | Method and apparatus for detecting kissing unbond defects |
US6399948B1 (en) | 1999-09-16 | 2002-06-04 | Wayne State University | Miniaturized contactless sonic IR device for remote non-destructive inspection |
US6236049B1 (en) | 1999-09-16 | 2001-05-22 | Wayne State University | Infrared imaging of ultrasonically excited subsurface defects in materials |
US6437334B1 (en) | 1999-09-16 | 2002-08-20 | Wayne State University | System and method for detecting cracks in a tooth by ultrasonically exciting and thermally imaging the tooth |
US6759659B2 (en) | 1999-09-16 | 2004-07-06 | Wayne State University | Thermal imaging system for detecting defects |
US6593574B2 (en) | 1999-09-16 | 2003-07-15 | Wayne State University | Hand-held sound source gun for infrared imaging of sub-surface defects in materials |
US20030205671A1 (en) * | 1999-09-16 | 2003-11-06 | Wayne State University | Thermal imaging system for detecting defects |
US6786098B2 (en) * | 2000-01-20 | 2004-09-07 | Airbus Uk Limited | Material analysis |
US6575620B1 (en) * | 2000-02-15 | 2003-06-10 | The United States Of America As Represented By The Secretary Of The Air Force | Method and device for visually measuring structural fatigue using a temperature sensitive coating |
EP1182449A1 (en) * | 2000-08-21 | 2002-02-27 | Motorola, Inc. | Apparatus and method for managing an integrated circuit |
US6750664B2 (en) | 2000-08-21 | 2004-06-15 | Freescale Semiconductor, Inc. | Apparatus for managing an intergrated circuit |
US20020167987A1 (en) * | 2000-08-25 | 2002-11-14 | Art Advanced Research Technologies Inc. | Detection of defects by thermographic analysis |
US6491426B1 (en) * | 2001-06-25 | 2002-12-10 | Sbs Technologies Inc. | Thermal bond verification |
US20070140310A1 (en) * | 2003-01-20 | 2007-06-21 | Rolton Peter E | Identification of materials by non destructive testing |
US20110016975A1 (en) * | 2009-07-24 | 2011-01-27 | Gregory Scott Glaesemann | Method and Apparatus For Measuring In-Situ Characteristics Of Material Exfoliation |
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