US5280446A - Flash eprom memory circuit having source side programming - Google Patents
Flash eprom memory circuit having source side programming Download PDFInfo
- Publication number
- US5280446A US5280446A US07/895,311 US89531192A US5280446A US 5280446 A US5280446 A US 5280446A US 89531192 A US89531192 A US 89531192A US 5280446 A US5280446 A US 5280446A
- Authority
- US
- United States
- Prior art keywords
- drain
- gate
- volts
- floating gate
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
Description
__________________________________________________________________________ CG1 CG2 CG3 CG4 D1 D2 D3 S1 S2 SG1 SG2 SG3 SG4__________________________________________________________________________ Program P1 12 0 0 0 5 0 0 0 5 2 0 0 0 Erase P1˜P8 -11 -11 0 0 5F F F F 0 0 0 0Read P1 5 0 0 0 0 0 0 2 0 5 0 0 0 __________________________________________________________________________
Claims (5)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/895,311 US5280446A (en) | 1990-09-20 | 1992-06-08 | Flash eprom memory circuit having source side programming |
PCT/US1994/000460 WO1995019624A1 (en) | 1990-09-20 | 1994-01-13 | Flash eprom memory circuit having source side programming |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58581190A | 1990-09-20 | 1990-09-20 | |
US07/895,311 US5280446A (en) | 1990-09-20 | 1992-06-08 | Flash eprom memory circuit having source side programming |
PCT/US1994/000460 WO1995019624A1 (en) | 1990-09-20 | 1994-01-13 | Flash eprom memory circuit having source side programming |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US58581190A Continuation-In-Part | 1990-09-20 | 1990-09-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
US5280446A true US5280446A (en) | 1994-01-18 |
Family
ID=27377607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/895,311 Expired - Lifetime US5280446A (en) | 1990-09-20 | 1992-06-08 | Flash eprom memory circuit having source side programming |
Country Status (2)
Country | Link |
---|---|
US (1) | US5280446A (en) |
WO (1) | WO1995019624A1 (en) |
Cited By (132)
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