US6355509B1 - Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication - Google Patents

Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication Download PDF

Info

Publication number
US6355509B1
US6355509B1 US09/014,639 US1463998A US6355509B1 US 6355509 B1 US6355509 B1 US 6355509B1 US 1463998 A US1463998 A US 1463998A US 6355509 B1 US6355509 B1 US 6355509B1
Authority
US
United States
Prior art keywords
semiconductor film
mask
heating
catalyst metal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US09/014,639
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP02955197A external-priority patent/JP4190600B2/en
Priority claimed from JP02955297A external-priority patent/JP3696710B2/en
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD. reassignment SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YAMAZAKI, SHUNPEI
Application granted granted Critical
Publication of US6355509B1 publication Critical patent/US6355509B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Definitions

  • the present invention disclosed in the specification relates to a method of fabricating a semiconductor device by using a silicon film formed on a substrate of glass or the like.
  • the present invention relates to a method of fabricating a thin film transistor on a glass substrate.
  • a technology of fabricating a thin film transistor on a glass substrate or a quartz substrate is known.
  • a thin film transistor using a silicon film having crystalline performance has shown good results.
  • a laser annealing process can be used as a process having a process temperature that the glass substrate can withstand.
  • the laser annealing process is superior in that almost no thermal impact is caused in the substrate.
  • a crystalline silicon film is provided by performing a heating treatment at a temperature that a glass substrate can withstand and by introducing a metal element for promoting the crystallization of silicon, such as nickel or the like, into an amorphous silicon film.
  • the resulting crystalline silicon film has excellent quality not previously obtained (meaning that not only is crystalline performance excellent, but a TFT (Thin Film Transistor) having excellent properties results) over a large area.
  • TFT Thin Film Transistor
  • the present invention disclosed in the specification provides the means for resolving the problem.
  • the present invention provides a method of fabricating a semiconductor device comprising:
  • the present invention provides a method of fabricating a semiconductor device comprising:
  • the present invention provides a method of fabricating a semiconductor device comprising:
  • the present invention provides a method of fabricating a semiconductor device comprising:
  • the present invention provides a method of fabricating a semiconductor device comprising:
  • the present invention provides a method of fabricating a semiconductor device comprising:
  • the heating treatment in an atmosphere including oxygen.
  • Ni nickel
  • metal element for promoting the crystallization of silicon one or more elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au can be utilized.
  • P phosphor
  • a material selected from a group consisting of N, As, Sb and Bi, which belong to the same periodic group as P, can be used.
  • FIGS. 1 (A), 1 (B), 1 (C), 1 (D) and 1 (E) are views showing fabrication steps of a thin film transistor
  • FIGS. 2 (A), 2 (B), 2 (C), 2 (D) and 2 (E) are views showing fabrication steps of a thin film transistor
  • FIGS. 3 (A), 3 (B), 3 (C), 3 (D) and 3 (E) are views showing fabrication steps of a thin film transistor
  • FIGS. 4 (A), 4 (B), 4 (C), 4 (D) and 4 (E) are views showing fabrication steps of a thin film transistor
  • FIGS. 5 (A), 5 (B), 5 (C), 5 (D) and 5 (E) are views showing fabrication steps of a thin film transistor
  • FIGS. 6 (A), 6 (B), 6 (C), 6 (D) and 6 (E) are views showing fabrication steps of a thin film transistor
  • FIGS. 7 (A), 7 (B), 7 (C), 7 (D) and 7 (E) are views showing fabrication steps of a thin film transistor
  • FIGS. 8 (A), 8 (B), 8 (C), 8 (D) and 8 (E) are views showing fabrication steps of a thin film transistor
  • FIGS. 9 (A), 9 (B), 9 (C), 9 (D), 9 (E) and 9 (F) are views showing devices using the present invention.
  • FIGS. 10 (A), 10 (B), 10 (C), 10 (D) and 10 (E) are views showing fabrication steps of a thin film transistor
  • FIGS. 11 (A), 11 (B), 11 (C), 11 (D) and 11 (E) are views showing fabrication steps of a thin film transistor.
  • FIGS. 12 (A), 12 (B), 12 (C), 12 (D) and 12 (E) are views showing fabrication steps of a thin film transistor.
  • FIGS. 1 (A), 1 (B), 1 (C), 1 (D) and 1 (E) a portion of a crystalline silicon film, which has been crystallized by utilizing nickel as a metal element for promoting the crystallization of silicon, is masked by a resist mask 106 , and P (phosphor) ions are accelerated and implanted into a region which has not been masked.
  • P ions are doped into regions 107 and 109 . Furthermore, these regions are impaired by bombardment of ions and are made amorphous.
  • the structure is subjected to a heating treatment in an atmosphere including chlorine as shown in FIG. 2 (A), during which the nickel element is moved from a masked region 108 to the regions 107 and 109 where P has been accelerated and implanted.
  • the nickel element is removed from the masked region 108 .
  • An activation layer of a thin film transistor is formed by utilizing this region.
  • the thin film transistor can be fabricated after removing the adverse influence of the nickel element.
  • FIGS. 1 (A), 1 (B), 1 (C), 1 (D) and 1 (E) An outline of the fabrication steps of one embodiment will be shown in reference to FIGS. 1 (A), 1 (B), 1 (C), 1 (D) and 1 (E) and FIGS. 2 (A), 2 (B), 2 (C), 2 (D) and 2 (E).
  • a silicon oxide film 102 is formed to a thickness of 3000 ⁇ , using a plasma CVD (Chemical Vapor Deposition) process, as an underlayer film on a glass substrate 101 .
  • a plasma CVD Chemical Vapor Deposition
  • an amorphous silicon film 103 is formed to a thickness of 4000 ⁇ using a low pressure thermal CVD process (or plasma CVD process).
  • Ge may be included in the amorphous silicon film 103 .
  • an extremely thin oxide film (not illustrated) is formed on the surface.
  • the extremely thin oxide film is formed by irradiating a UV (Ultra Violet) ray in an atmosphere of oxygen.
  • the oxide film promotes wettability by a solution to be coated in later steps.
  • a nickel acetate solution including 10 ppm of nickel (in terms of weight) is coated. Extraneous solution is removed by a spin coater.
  • the heating treatment can be carried out at temperatures of 550° C. through 700° C., preferably 600° C. through 650° C. It is necessary to set the upper limit of the heating temperature below the strain point of the glass substrate.
  • a laser beam is irradiated on the crystalline silicon film 105 , as shown by FIG. 1 (C).
  • a KrF excimer laser (wavelength 248 nm) is used.
  • An excimer laser is a pulse oscillation type of laser, and by irradiating the laser beam, instantaneous melting and solidification of an irradiated region repeatedly occurs.
  • a kind of nonequilibrium state is formed by irradiating the excimer laser beam. Specifically, a projection referred to as ridge is formed on the surface and the nickel element is segregated partially.
  • a mask 106 comprising a silicon oxide film is formed, as shown by FIG. 1 (D).
  • P (phosphor) element is doped by a plasma doping process (or ion implantation process).
  • the condition of doping is set such that the final concentration of P element is greater than the concentration of nickel element remaining in the silicon film by at least one order of magnitude.
  • the maximum value of the concentration of nickel element remaining in the silicon film upon completion of the step of FIG. 1 (C) is about 1 ⁇ 10 19 atoms cm ⁇ 3 .
  • the doping condition is set such that the P element is doped to a minimum concentration of about 1 ⁇ 10 20 atoms cm ⁇ 3 or more.
  • the doping of P ions is carried out in regions 107 and 109 in FIG. 1 (E).
  • the regions 107 and 109 include high concentrations of P. Further, these regions are made amorphous by bombardment of implanted ions.
  • the P element is not doped due to the presence of the mask 106 comprising a silicon oxide film.
  • the region 108 maintains crystalline performance.
  • the sample After doping with the P element, the sample is subjected to a heating treatment.
  • the sample is arranged in a heating furnace with an atmosphere of a mixture gas of nitrogen (partial pressure ratio of 88%), oxygen (partial pressure ratio of 10%) and hydrogen chloride (partial pressure ratio of 2%), where a heating treatment is carried out at 400° C. for 30 minutes.
  • the nickel element in the region 108 is moved to the regions 107 and 108 by the operation of P (phosphor). (FIG. 2 (A))
  • the movement of the nickel element is expedited by the fact that the nickel element is easy to move because of the previous irradiating operation of the laser beam and the fact that the regions 107 and 109 are made amorphous.
  • the fact that the regions 107 and 109 are made amorphous and include much defect and strain plays a significant role in moving nickel element to these regions.
  • a thin oxide film (thermally oxidized film) is formed on the surfaces of the exposed silicon films (surfaces of regions 107 and 109 ) where the nickel element is absorbed by the operation of halogen a element.
  • the heating temperature when the laser beam is not irradiated, the heating temperature must be elevated further to a temperature of, for example, 600° C. or higher.
  • the very thin thermally oxidized film is formed and nickel element is gettered into the film.
  • the regions 107 and 109 are brought into a porous state since etching is excessively progressed locally. (The region can never be utilized to form an element).
  • the mask 106 comprising a silicon oxide film is removed.
  • a resist mask 110 is formed.
  • the resist mask covers an area that is narrower than the region covered by the mask 106 .
  • the silicon film is patterned by utilizing the resist mask 110 .
  • a pattern of a crystalline silicon film designated by the numeral 111 is obtained.
  • the pattern is to constitute an activation layer of a thin film transistor at later steps. (FIG. 2 (C))
  • the resist mask 110 is removed. Further, a gate insulating film is provided by covering the silicon film pattern 111 , where films designated by numerals 100 and 111 are laminated.
  • a silicon oxide film 11 of 1000 ⁇ is formed by a plasma CVD process and the oxide film 100 of about 50 ⁇ is formed by a thermal oxidation process, whereby the gate insulating film is formed.
  • the preferred condition of this thermal oxidation is that the substrate temperature is 950° C., the atmosphere is oxygen mixed with 3% HCl, and the duration is one hour.
  • the oxide film 100 that is formed later is formed at the inner side of the silicon oxide film 11 that is formed by a CVD process. (FIG. 2 (D))
  • a gate electrode 12 having a major component of aluminum is formed.
  • An anodized film 10 is formed on the gate electrode 12 by an anodic oxidation process after forming the pattern.
  • the anodized film 10 electrically and mechanically protects the surface of the aluminum film, which has low heat resistance.
  • an impurity is doped in order to form a source and a drain region.
  • P (phosphor) ions are doped by a plasma doping process to fabricate a thin film transistor of an N-channel type.
  • P element is doped into the regions 112 and 114 .
  • the numeral 112 designates the source region, and the numeral 114 designates the drain region. Also, a region 113 designates a channel region.
  • a laser beam is irradiated so that portions destroyed by the doping operation are annealed and the dopant is activated.
  • a silicon nitride film 115 is formed to a thickness of 2000 ⁇ , using a plasma CVD process, as an interlayer insulating film.
  • a polyimide resin film 116 is formed by a spin coating process.
  • the surface can be flattened.
  • a material of polyamide, polyimide amide, epoxy resin, acrylic resin or the like can be used for the material of the resin film.
  • FIG. 3 and FIG. 4 show an outline of the fabrication steps of this embodiment.
  • This embodiment shows a crystallizing method that is different from that in Embodiment 1.
  • a silicon oxide film 202 is formed as an underlayer film on a glass substrate 201 to a thickness of 3000 ⁇ using a plasma CVD process.
  • an amorphous silicon film 203 is formed to a thickness of 4000 ⁇ using a low pressure thermal CVD process (or plasma CVD process).
  • an extremely thin oxide film is formed on the surface.
  • the extremely thin oxide film is formed by irradiating a UV light in an atmosphere of oxygen.
  • the oxide film has a function of promoting the wettability of a solution coated in later steps.
  • a mask 15 comprising a silicon oxide film is formed.
  • the mask is provided by forming a silicon oxide film having a thickness of 1000 ⁇ by using a plasma CVD process and patterning the film.
  • An opening having a slit-like shape designated by numeral 16 is formed at the mask 15 .
  • the amorphous silicon film 203 is exposed at the region of the slit 16 .
  • a nickel acetate solution including 10 ppm of nickel (in terms of weight) is coated. Extraneous solution is removed by a spin coater.
  • FIG. 3 (B) When the state shown by FIG. 3 (A) has been provided, a heating treatment is carried out at 600° C. for 6 hours. In this step, as designated by numeral 17 , crystal growth progresses in a direction in parallel with the substrate 201 from the region where nickel element has been selectively introduced (region of opening 16 ). Thus, a crystalline silicon film 205 is provided. (FIG. 3 (B))
  • the heating treatment can be carried out at temperatures of 550° C. through 700° C., preferably 600° C. through 650° C. Incidentally, it is necessary to set the upper limit of the heating temperature below the strain point of the glass substrate.
  • a laser beam is irradiated on the crystalline silicon film 205 that has been provided through the above-described steps.
  • a KrF excimer laser (wavelength 248 nm) is used.
  • the excimer laser is a pulse oscillation type of laser, and by irradiating the laser beam, instantaneous melting and solidification of the irradiated region repeatedly occurs.
  • a mask 206 comprising a silicon oxide film is formed.
  • the region covered by the mask 206 avoids the region where nickel element was previously introduced.
  • the region that has not been covered by the mask 206 is to be removed in later steps, and in this case, it is preferable to simultaneously remove a region where nickel element has been introduced and an initiation point of crystal growth (nickel element is included at comparatively high concentration).
  • P (phosphor) element is doped by a plasma doping process (or ion implantation process).
  • the condition of doping is set such that the final concentration of P element is greater than the concentration of nickel element remaining in the film by at least one order of magnitude.
  • the maximum value of the concentration of nickel element remaining in the silicon film when the step of FIG. 3 (C) has been finished is about 1 ⁇ 10 19 atoms cm ⁇ 3 .
  • the doping condition is set such that the concentration of doped P element in the film is at least about 1 ⁇ 10 20 atoms cm ⁇ 3 or more.
  • the doping of P ions is carried out in regions 207 and 209 of FIG. 3 (E).
  • the regions 207 and 209 include P at high concentrations. Further, these regions are made amorphous by bombardment of implanted ions.
  • a region designated by numeral 208 has not been doped with P element due to the presence of the mask 206 .
  • the region 208 maintains crystalline performance.
  • the sample After doping with the P element, the sample is subjected to a heating treatment.
  • the sample is arranged in a heating furnace with an atmosphere of a mixture gas of nitrogen (partial pressure ratio of 88%), oxygen (partial pressure ratio of 10%) and hydrogen chloride (partial pressure ratio of 2%), and the heating treatment is carried out at 400° C. for 30 minutes.
  • nickel element in the region 208 is moved to the regions 207 and 208 by the operation of P (phosphor). (FIG. 4 (A))
  • the movement of nickel element is promoted by the fact that nickel element is easy to move because of the previous irradiation by the laser beam and the fact that the regions 207 and 209 have been made amorphous.
  • the fact that the regions 207 and 209 have been made amorphous and include much defect or strain plays a significant role in moving nickel element to these regions.
  • the regions 207 and 209 are brought into a porous state since the etching operation is excessively progressed locally. (The region cannot be utilized in forming an element at all.)
  • the mask 206 comprising a silicon oxide film is removed. Further, as shown by FIG. 4 (B), a resist mask 210 is formed. The resist mask covers an area that is narrower than the area covered with the mask 206 .
  • the silicon film is patterned by utilizing the resist mask 210 . As a result, the region where nickel element is segregated is removed. (The above-described steps are referred to as lateral gettering.)
  • a pattern of a crystalline silicon film designated by the numeral 211 is obtained.
  • the pattern is to constitute an activation layer of a thin film transistor in later steps. (FIG. 4 (C))
  • the resist mask 210 is removed. Further, a gate insulating film is provided to cover the silicon film pattern 211 , where films designated by numerals 200 and 211 are laminated.
  • a silicon oxide film 21 having a thickness of 1000 ⁇ is formed by a plasma CVD process, and an oxide film 200 having a thickness of about 50 ⁇ is formed by a thermal oxidation process, whereby the gate insulating film is formed.
  • the preferred condition of this thermal oxidation is that the substrate temperature is 950° C., the atmosphere is oxygen mixed with 3% HCl, and the duration is one hour.
  • the thermally oxidized film 200 that is formed later is formed at the inner side of the silicon oxide film 21 that is formed by a CVD process. (FIG. 4 (D))
  • a gate electrode 22 having a major component of aluminum is formed.
  • An anodized film 20 is formed on the gate electrode 22 by an anodized oxidation process after forming the pattern.
  • the anodized film has a function of electrically and mechanically protecting the surface of the aluminum film, which has low heat resistance.
  • an impurity is doped in order to form a source and a drain region.
  • P (phosphor) ions are doped by a plasma doping process to fabricate a thin film transistor of an N-channel type.
  • P element is doped into regions 212 and 214 .
  • the numeral 212 designates the source region, and the numeral 214 designates the drain region. Further, a region 213 constitutes a channel region.
  • a laser beam is irradiated after finishing the doping process, so that portions destroyed by the doping process are annealed and the dopant is activated.
  • a silicon nitride film 215 is formed to a thickness of 2000 ⁇ , using a plasma CVD process, as an interlayer insulating film.
  • a polyimide resin film 216 is formed by a spin coating process.
  • the surface can be flattened.
  • a material of the resin film As a material of the resin film, a material of polyamide, polyimide amide, epoxy resin, acrylic resin or the like can be utilized.
  • a treatment is carried out by using a solution mixed with hydrogen fluoride and hydrogen peroxide instead of performing a heating treatment in an atmosphere including halogen element.
  • nickel and nickel silicide are selectively etched.
  • This embodiment relates to a method of controlling a threshold value of a TFT in the constructions shown by Embodiment 1 and Embodiment 2.
  • a small amount of B (boron) is doped in forming the amorphous silicon film 103 shown by FIG. 1 (A).
  • the doping is carried out by mixing a small amount of B 2 H 6 in a film-forming gas in the film-forming operation.
  • B is doped in forming the amorphous silicon film 203 shown by FIG. 3 (A).
  • These operations are carried out to control a threshold value of the TFT by forming a channel region of weak P type.
  • B boron
  • B may be doped by a plasma doping process or an ion implantation process after forming the amorphous silicon film.
  • P (phosphor) is doped.
  • a silicon material is used as a gate electrode in the construction shown by Embodiment 1 and Embodiment 2.
  • an ion implantation process is used as a method of introducing a metal element for promoting the crystallization of silicon in the steps shown by Embodiment 1 and Embodiment 2. That is, the nickel element is introduced into the amorphous silicon film by accelerating nickel ions with an electric field and implanting the ions into the amorphous silicon film.
  • This embodiment shows steps of fabricating a thin film transistor circuit that is formed in a complementary type by removing a metal element, as disclosed above.
  • an underlayer film 302 comprising a silicon oxide film is formed on a glass substrate 301 .
  • an amorphous silicon film 303 is formed. Further, a state in which nickel element is brought into contact with and held by the entire surface of the amorphous silicon film 303 , as designated by the numeral 304 , is provided by using a nickel acetate solution. (FIG. 5 (A))
  • the amorphous silicon film 303 is crystallized by performing a heating treatment. (FIG. 5 (B))
  • a laser beam is irradiated as shown by FIG. 5 (C).
  • P ions are accelerated and implanted into regions 308 , 310 and 312 . Further, P ions are not accelerated and implanted to regions 309 and 311 .
  • the nickel element is gettered by performing a heating treatment in an atmosphere that includes a mixture of oxygen and nitrogen.
  • the silicon film is patterned by utilizing the resist masks 313 and 314 .
  • patterns each comprising a crystalline silicon film as designated by numerals 315 and 316 , are provided.
  • One of the patterns is to constitute an activation layer of a TFT of the P-channel type, and the other is to constitute an activation layer of a TFT of the N-channel type.
  • a gate insulating film comprising a thermally oxidized film 318 and a silicon oxide film 319 , formed by a plasma CVD process, are formed.
  • gate electrodes 321 and 323 are formed, and anodized films 320 and 322 are formed on the surfaces.
  • a source region 324 and a drain region 326 of a thin film transistor of the P-channel type are formed by selectively doping P and B by using a resist mask (not illustrated). Further, a source region 329 and a drain region 327 of a thin film transistor of the N-channel type are formed. (FIG. 6 (D))
  • a laser beam is irradiated and the source and drain regions are activated.
  • a silicon nitride film 330 is formed and a polyimide resin film 331 is formed to create an interlayer insulating film. Then, contact holes are formed, and a source electrode 332 of a P-channel type TFT, a source electrode 334 of an N-channel type TFT, and a drain electrode 333 common to both TFTs are formed.
  • the amorphous silicon film 303 is crystallized by using the crystallizing method explained in Embodiment 1, the crystallizing method explained in Embodiment 2 can also be used.
  • This embodiment shows fabrication steps of a thin film transistor of a reverse stagger type.
  • a silicon oxide film 402 is formed as an underlayer film on a glass substrate 401 .
  • a gate electrode 403 comprising a metal silicide is formed. Further, a gate insulating film 404 is formed.
  • an amorphous silicon film 405 is formed.
  • a mask 400 comprising a silicon oxide film is formed.
  • An opening 40 is provided in the mask.
  • the amorphous silicon film 405 is crystallized by a heating treatment. In this case, crystal growth is progressed in a direction indicated by an arrow mark 41 .
  • a mask 408 comprising a silicon oxide film, is formed. (FIG. 7 (D))
  • FIG. 8 (A) a heating treatment is carried out in an atmosphere that includes a mixture of HCl, oxygen and nitrogen, and nickel element is gettered as shown by FIG. 8 (A).
  • a gate electrode 414 is provided, and doping of an impurity of one conductive type is carried out, using the gate electrode as a mask. In this way, a source region 415 and a drain region 417 are formed. (FIG. 8 (D))
  • a laser beam is irradiated and the source and the drain regions are activated.
  • a silicon nitride film 418 and a polyimide resin film 419 are formed to constitute an interlayer insulating film.
  • FIG. 8 (E) a thin film transistor of a reverse stagger type is finished as shown by FIG. 8 (E).
  • the amorphous silicon film 405 is crystallized by using the crystallizing method explained in Embodiment 2, the crystallizing method explained in Embodiment 1 also can be used.
  • FIGS. 9 (A), 9 (B), 9 (C), 9 (D), 9 (E) and 9 (F) show outlines of respective devices.
  • FIG. 9 (A) shows a portable-type information-processing terminal that includes a communication function over a telephone network.
  • This electronic device is provided with an integrated circuit 2006 that includes thin film transistors inside its main body 2001 . Further, a liquid crystal display 2005 of an active matrix type, a camera unit 2002 for taking pictures, and an operation switch 2004 are provided.
  • FIG. 9 (B) shows an electronic device referred to as a head mount display.
  • the device displays pictures pseudonymously in front of the eyes by mounting a main body 2101 onto the head by a band 2103 .
  • the pictures are formed by a liquid crystal display device 2102 in correspondence with left and right eyes.
  • a circuit that includes thin film transistors is used to make the device small-sized and light-weight.
  • FIG. 9 (C) shows a device that displays map information or various information based on a signal from an artificial satellite.
  • Information caught from a satellite by an antenna 2204 is processed by an electronic circuit installed inside a main body 2201 , and necessary information is displayed at a liquid crystal display device 2202 .
  • the operation of the device is carried out by operation switches 2203 . Also, in such a device, a circuit that includes thin film transistors is used to reduce the size of the device.
  • FIG. 9 (D) shows a portable telephone.
  • the electronic device is provided with an antenna 2306 , a voice output unit 2302 , a liquid crystal display device 2304 , operation switches 2305 , and a voice input unit 2303 at a main body 2301 .
  • An electronic device shown by FIG. 9 (E) is a portable-type picture-taking device, usually referred to as a video camera.
  • the electronic device includes a liquid crystal display 2402 attached to an opening-and-closing member and operation switches 2404 attached to an opening-and-closing member at a main body 2401 .
  • the main body 2401 includes a picture receiving unit 2406 , an integrated circuit 2407 , a voice input unit 2403 , the operation switches 2404 , and a battery 2405 .
  • An electronic device shown by FIG. 9 (F) is a projection type liquid crystal display device.
  • the device is provided with a light source 2502 , a liquid crystal display device 2503 , and an optical system 2504 at a main body 2501 and has a function of projecting pictures onto a screen 2505 .
  • a transmitting type or a reflecting type can be used for the liquid crystal display devices in the electronic devices shown above.
  • the transmitting type has better display characteristics, and the reflecting type is advantageous when low power consumption or small-size and light-weight are important.
  • a flat panel display of an EL (Electro-luminescence) display of an active matrix type, a plasma display, or the like can be utilized for the display device.
  • EL Electro-luminescence
  • FIGS. 10 (A), 10 (B), 10 (C), 10 (D) and 10 (E) show fabrication steps of the embodiment.
  • an underlayer film 502 and a crystalline silicon film 503 are formed on a glass substrate 501 in accordance with the crystallizing steps shown by Embodiment 1 or Embodiment 2. Further, a mask 505 comprising a silicon oxide film (or silicon nitride film) is formed by using a resist mask 504 . (FIG. 10 (A))
  • the mask 505 comprising a silicon oxide film is patterned again by utilizing the resist mask 509 , and a pattern comprising a silicon oxide film designated by numeral 510 is formed. Further, the resist mask 509 is removed. (FIG. 10 (D))
  • a heating treatment is carried out in a state of FIG. 10 (D), and nickel element is moved from a region 508 to the regions 506 and 507 .
  • the region of the silicon film designated by numeral 508 is patterned by utilizing the mask 510 , in which a region 511 that is to constitute an activation layer of a thin film transistor in later steps is formed. Thereafter, a thin film transistor is fabricated in accordance with steps described in Embodiment 1 or other embodiments.
  • the pattern of the silicon film designated by numeral 511 can be formed in a self-adjusting manner by utilizing the mask for implanting P ions.
  • FIG. 11 (A), 11 (B), 11 (C), 11 (D), 11 (E) and 11 (F) show fabrication steps of this embodiment.
  • an underlayer film 602 is formed on a glass substrate 601 .
  • a crystalline silicon film 603 is formed in accordance with the crystallizing steps shown by Embodiment 1 or Embodiment 2.
  • a mask 604 comprising a silicon oxide film (or silicon nitride film) is formed by utilizing a resist mask 605 . (FIG. 11 (A))
  • the resist mask 605 is removed. Further, nickel element is moved from a region 608 to the regions 606 and 607 by performing a heating treatment as shown by FIG. 11 (C).
  • the region 608 of the silicon film is patterned, utilizing the mask 604 comprising the silicon oxide film, to provide a region designated by numeral 609 .
  • isotropic etching is carried out, utilizing the mask 604 comprising the silicon oxide film, during which side faces of the pattern 609 of the silicon film are etched and a pattern designated by numeral 610 is provided. (FIG. 11 (D))
  • the mask 604 is removed, and an activation layer of a thin film transistor is formed by using the pattern of the silicon film designated by numeral 610 .
  • the mask 604 can be utilized twice, and the activation layer pattern 610 can be self-adjusting.
  • regions 606 or 607 in which nickel element is not present at high concentrations, can be produced in the patterning operation of the silicon film shown by FIG. 11 (E).
  • the nickel element may be scattered and incorporated into a region that is ultimately to form an activation layer.
  • the nickel element may be incorporated into the region 511 when objects that are to be removed by etching scatter from the regions 506 and 507 .
  • This embodiment shows an example in which the fabrication steps shown in Embodiment 1 or Embodiment 2 are improved.
  • an underlayer film 702 is formed on a glass substrate 701 , as shown by FIG. 12 (A), and a crystalline silicon film 703 is formed by utilizing the crystallizing method shown by Embodiment 1 or Embodiment 2.
  • a mask comprising a film laminated with a silicon oxide film 705 and a silicon nitride film 706 , is formed by utilizing a resist mask 704 . (FIG. 12 (A))
  • nickel element is moved from a region 709 to regions 707 and 708 by performing a heating treatment. (FIG. 12 (C))
  • the mask 705 of the silicon oxide film is etched through isotropic etching by utilizing the mask 706 of the silicon nitride film.
  • a mask 710 comprising a silicon oxide film, side faces of which have been etched, is provided. (FIG. 12 (D))
  • the mask 706 of the silicon nitride film is removed, and a pattern 711 of a silicon film is provided by using the mask 710 produced in the step of FIG. 7 (D).
  • the pattern of the silicon film designated by numeral 711 can be self-adjusting.
  • the regions of exposed silicon films that is, the regions 707 and 708 , are removed. Further, the steps shown by FIGS. 7 (D) and 7 (E) are carried out.
  • the concentration of the metal element remaining in an activation layer can be reduced. Further, problems of dispersion or unstableness can be improved.

Abstract

To remove nickel element after crystallization in fabricating a crystalline silicon film using nickel, a mask 106 is provided on a crystalline silicon film provided by using nickel and P (phosphor) is doped in respect of regions 107 and 109, thereafter, a heating treatment is carried out in an atmosphere including halogen element, in this case, nickel element is moved from a region 108 to the regions 107 and 109 and a thin film transistor is fabricated by utilizing the region 108 where nickel element has been removed.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention disclosed in the specification relates to a method of fabricating a semiconductor device by using a silicon film formed on a substrate of glass or the like. For example, the present invention relates to a method of fabricating a thin film transistor on a glass substrate.
2. Description of the Related Art
A technology of fabricating a thin film transistor on a glass substrate or a quartz substrate is known.
Although the mainstream technology is a thin film transistor using an amorphous silicon film, recently, a silicon film having crystalline performance has also been fabricated.
A thin film transistor using a silicon film having crystalline performance has shown good results.
However, it is difficult to form a silicon film having high crystalline performance uniformly in a large area.
Further, it is desirable to use an inexpensive glass substrate as a substrate. However, a technology of providing a crystalline silicon film at a processing temperature that the glass substrate can withstand is needed. This is an important technological problem.
A laser annealing process can be used as a process having a process temperature that the glass substrate can withstand. The laser annealing process is superior in that almost no thermal impact is caused in the substrate.
However, the following problems exist.
(1) It is difficult to carry out laser annealing uniformly over a large area.
(2) Oscillation intensity of the laser beam used in the process is unstable.
One known technology is disclosed in Unexamined Published Japanese Patent Application No. 7-321339 as a means for resolving these problems.
In this technology, a crystalline silicon film is provided by performing a heating treatment at a temperature that a glass substrate can withstand and by introducing a metal element for promoting the crystallization of silicon, such as nickel or the like, into an amorphous silicon film.
When the technology disclosed in Unexamined Published Japanese Patent Application No. 7-321339 is used, the resulting crystalline silicon film has excellent quality not previously obtained (meaning that not only is crystalline performance excellent, but a TFT (Thin Film Transistor) having excellent properties results) over a large area.
However, a problem of dispersion or unstableness still exists, which seems to be caused by the metal element remaining in the silicon.
SUMMARY OF THE INVENTION
The present invention disclosed in the specification provides the means for resolving the problem.
In one aspect, the present invention provides a method of fabricating a semiconductor device comprising:
a step of introducing a metal element for promoting the crystallization of silicon into an amorphous silicon film;
a step of providing a crystalline silicon film by crystallizing the amorphous silicon film by performing a heating treatment;
a step of masking a portion of the crystalline silicon film and accelerating and implanting ions of an impurity element to another portion;
a step of moving the metal element for promoting the crystallization of silicon present in the crystalline silicon film by performing a heating treatment; and
a step of forming an activation layer of a semiconductor device by utilizing the masked region.
In another aspect, the present invention provides a method of fabricating a semiconductor device comprising:
a step of introducing a metal element for promoting the crystallization of silicon into an amorphous silicon film;
a step of providing a crystalline silicon film by crystallizing the amorphous silicon film by performing a heating treatment;
a step of irradiating a laser beam on the crystalline silicon film;
a step of masking a portion of the crystalline silicon film and accelerating and implanting ions of an impurity element to another portion;
a step of moving the metal element for promoting the crystallization of silicon present in the crystalline silicon film by performing a heating treatment; and
a step of forming an activation layer of a semiconductor device by utilizing the masked region.
In another aspect, the present invention provides a method of fabricating a semiconductor device comprising:
a step of introducing a metal element for promoting the crystallization of silicon into an amorphous silicon film;
a step of providing a crystalline silicon film by crystallizing the amorphous silicon film by performing a heating treatment;
a step of masking a portion of the crystalline silicon film and accelerating and implanting ions of an impurity element to another portion;
a step of moving the metal element from the masked region to the region where the impurity element has been doped by performing a heating treatment; and
a step of forming an activation layer of a semiconductor device by utilizing the masked region.
In another aspect, the present invention provides a method of fabricating a semiconductor device comprising:
a step of selectively introducing a metal element for promoting the crystallization of silicon into an amorphous silicon film formed on a substrate having an insulating surface;
a step of providing a crystalline silicon film by making crystals grow from a region where the metal element has been selectively introduced in a direction in parallel with the substrate by performing a heating treatment;
a step of masking a portion of the crystalline silicon film and accelerating and implanting ions of an impurity element to another portion;
a step of moving the metal element for promoting the crystallization of silicon present in the masked crystalline silicon film to the other portion by performing a heating treatment; and
a step of forming an activation layer of a semiconductor device by utilizing the masked region.
In another aspect, the present invention provides a method of fabricating a semiconductor device comprising:
a step of selectively introducing a metal element for promoting the crystallization of silicon into an amorphous silicon film formed on a substrate having an insulating surface;
a step of providing a crystalline silicon film by making crystals grow from a region where the metal element has been selectively introduced in a direction in parallel with the substrate by performing a heating treatment;
a step of irradiating a laser beam on the crystalline silicon film;
a step of masking a portion of the crystalline silicon film and accelerating and implanting ions of an impurity element to another portion;
a step of moving the metal element for promoting the crystallization of silicon present in the crystalline silicon film to the region where the impurity element has been accelerated and implanted by performing a heating treatment; and
a step of forming an activation layer of a semiconductor device by utilizing the masked region.
In another aspect, the present invention provides a method of fabricating a semiconductor device comprising:
a step of selectively introducing a metal element for promoting the crystallization of silicon into an amorphous silicon film formed on a substrate having an insulating surface;
a step of providing a crystalline silicon film by making crystals grow from a region where the metal element has been selectively introduced in a direction in parallel with the substrate by performing a heating treatment;
a step of masking a portion of the crystalline silicon film and accelerating and implanting ions of an impurity element to another portion;
a step of moving the metal element from the masked region to a region where the impurity element has been doped by performing a heating treatment; and
a step of forming an activation layer of a semiconductor device by utilizing the masked region.
During the step of moving the metal element, it is preferable to perform the heating treatment in an atmosphere including oxygen.
Further, it is preferable to utilize Ni (nickel) as the metal element for promoting the crystallization of silicon.
Further, as a metal element for promoting the crystallization of silicon, one or more elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au can be utilized.
Furthermore, it is preferable to utilize P (phosphor) as the impurity element that is accelerated and implanted into the crystalline silicon film. Other than P, a material selected from a group consisting of N, As, Sb and Bi, which belong to the same periodic group as P, can be used.
Further, it is important to select the masked region to avoid the region where the metal element has selectively been introduced.
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1(A), 1(B), 1(C), 1(D) and 1(E) are views showing fabrication steps of a thin film transistor;
FIGS. 2(A), 2(B), 2(C), 2(D) and 2(E) are views showing fabrication steps of a thin film transistor;
FIGS. 3(A), 3(B), 3(C), 3(D) and 3(E) are views showing fabrication steps of a thin film transistor;
FIGS. 4(A), 4(B), 4(C), 4(D) and 4(E) are views showing fabrication steps of a thin film transistor;
FIGS. 5(A), 5(B), 5(C), 5(D) and 5(E) are views showing fabrication steps of a thin film transistor;
FIGS. 6(A), 6(B), 6(C), 6(D) and 6(E) are views showing fabrication steps of a thin film transistor;
FIGS. 7(A), 7(B), 7(C), 7(D) and 7(E) are views showing fabrication steps of a thin film transistor;
FIGS. 8(A), 8(B), 8(C), 8(D) and 8(E) are views showing fabrication steps of a thin film transistor;
FIGS. 9(A), 9(B), 9(C), 9(D), 9(E) and 9(F) are views showing devices using the present invention;
FIGS. 10(A), 10(B), 10(C), 10(D) and 10(E) are views showing fabrication steps of a thin film transistor;
FIGS. 11(A), 11(B), 11(C), 11(D) and 11(E) are views showing fabrication steps of a thin film transistor; and
FIGS. 12(A), 12(B), 12(C), 12(D) and 12(E) are views showing fabrication steps of a thin film transistor.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
As shown by FIGS. 1(A), 1(B), 1(C), 1(D) and 1(E), a portion of a crystalline silicon film, which has been crystallized by utilizing nickel as a metal element for promoting the crystallization of silicon, is masked by a resist mask 106, and P (phosphor) ions are accelerated and implanted into a region which has not been masked.
As a result, P ions are doped into regions 107 and 109. Furthermore, these regions are impaired by bombardment of ions and are made amorphous.
The structure is subjected to a heating treatment in an atmosphere including chlorine as shown in FIG. 2(A), during which the nickel element is moved from a masked region 108 to the regions 107 and 109 where P has been accelerated and implanted.
In this way, the nickel element is removed from the masked region 108. An activation layer of a thin film transistor is formed by utilizing this region.
In this way, the thin film transistor can be fabricated after removing the adverse influence of the nickel element.
(Embodiment 1)
An outline of the fabrication steps of one embodiment will be shown in reference to FIGS. 1(A), 1(B), 1(C), 1(D) and 1(E) and FIGS. 2(A), 2(B), 2(C), 2(D) and 2(E).
First, as shown by FIG. 1(A), a silicon oxide film 102 is formed to a thickness of 3000 Å, using a plasma CVD (Chemical Vapor Deposition) process, as an underlayer film on a glass substrate 101.
Next, an amorphous silicon film 103 is formed to a thickness of 4000 Å using a low pressure thermal CVD process (or plasma CVD process). Incidentally, Ge may be included in the amorphous silicon film 103.
When the amorphous silicon film 103 has been formed, an extremely thin oxide film (not illustrated) is formed on the surface. In this case, the extremely thin oxide film is formed by irradiating a UV (Ultra Violet) ray in an atmosphere of oxygen. The oxide film promotes wettability by a solution to be coated in later steps.
Next, a nickel acetate solution including 10 ppm of nickel (in terms of weight) is coated. Extraneous solution is removed by a spin coater.
As a result, a state in which nickel element is brought into contact with and held by the surface of the amorphous silicon film 103, as indicated by numeral 104, is obtained. (FIG. 1(A))
When the state shown by FIG. 1(A) is obtained, a heating treatment is performed at 600° C. for 6 hours, during which the amorphous silicon film 103 is crystallized. Thereby, a crystalline silicon film 105 is obtained.
The heating treatment can be carried out at temperatures of 550° C. through 700° C., preferably 600° C. through 650° C. It is necessary to set the upper limit of the heating temperature below the strain point of the glass substrate.
Next, a laser beam is irradiated on the crystalline silicon film 105, as shown by FIG. 1(C). In this case, a KrF excimer laser (wavelength 248 nm) is used.
An excimer laser is a pulse oscillation type of laser, and by irradiating the laser beam, instantaneous melting and solidification of an irradiated region repeatedly occurs.
A kind of nonequilibrium state is formed by irradiating the excimer laser beam. Specifically, a projection referred to as ridge is formed on the surface and the nickel element is segregated partially.
Under such a nonequilibrium state, the nickel element moves easily when energy is applied from outside.
When irradiation of the laser beam stops, a mask 106 comprising a silicon oxide film is formed, as shown by FIG. 1(D).
Next, P (phosphor) element is doped by a plasma doping process (or ion implantation process).
The condition of doping is set such that the final concentration of P element is greater than the concentration of nickel element remaining in the silicon film by at least one order of magnitude.
According to a measurement by the inventors, the maximum value of the concentration of nickel element remaining in the silicon film upon completion of the step of FIG. 1(C) is about 1×1019 atoms cm−3.
Accordingly, in this case, the doping condition is set such that the P element is doped to a minimum concentration of about 1×1020 atoms cm−3 or more.
The doping of P ions is carried out in regions 107 and 109 in FIG. 1(E). As a result of the doping, the regions 107 and 109 include high concentrations of P. Further, these regions are made amorphous by bombardment of implanted ions.
Further, in a region shown by the numeral 108, the P element is not doped due to the presence of the mask 106 comprising a silicon oxide film. The region 108 maintains crystalline performance.
After doping with the P element, the sample is subjected to a heating treatment. In this case, the sample is arranged in a heating furnace with an atmosphere of a mixture gas of nitrogen (partial pressure ratio of 88%), oxygen (partial pressure ratio of 10%) and hydrogen chloride (partial pressure ratio of 2%), where a heating treatment is carried out at 400° C. for 30 minutes.
In this step, the nickel element in the region 108 is moved to the regions 107 and 108 by the operation of P (phosphor). (FIG. 2(A))
The movement of the nickel element is expedited by the fact that the nickel element is easy to move because of the previous irradiating operation of the laser beam and the fact that the regions 107 and 109 are made amorphous.
In particular, the fact that the regions 107 and 109 are made amorphous and include much defect and strain plays a significant role in moving nickel element to these regions.
Further, in this case, a thin oxide film (thermally oxidized film) is formed on the surfaces of the exposed silicon films (surfaces of regions 107 and 109) where the nickel element is absorbed by the operation of halogen a element.
Further, when the laser beam is not irradiated, the heating temperature must be elevated further to a temperature of, for example, 600° C. or higher.
Then, by exposing the regions 107 and 108 to the above-described atmosphere, the very thin thermally oxidized film is formed and nickel element is gettered into the film.
In this step, the regions 107 and 109 are brought into a porous state since etching is excessively progressed locally. (The region can never be utilized to form an element).
When the heating treatment has been finished, the mask 106 comprising a silicon oxide film is removed. Next, as shown by FIG. 2(B), a resist mask 110 is formed. The resist mask covers an area that is narrower than the region covered by the mask 106.
The silicon film is patterned by utilizing the resist mask 110. As a result, a pattern of a crystalline silicon film designated by the numeral 111 is obtained. The pattern is to constitute an activation layer of a thin film transistor at later steps. (FIG. 2(C))
With respect to the crystalline silicon film, nickel element in the film has been removed from the film.
When the pattern designated by the numeral 111 is provided, the resist mask 110 is removed. Further, a gate insulating film is provided by covering the silicon film pattern 111, where films designated by numerals 100 and 111 are laminated.
In this case, a silicon oxide film 11 of 1000 Å is formed by a plasma CVD process and the oxide film 100 of about 50 Å is formed by a thermal oxidation process, whereby the gate insulating film is formed. The preferred condition of this thermal oxidation is that the substrate temperature is 950° C., the atmosphere is oxygen mixed with 3% HCl, and the duration is one hour.
In this case, the oxide film 100 that is formed later is formed at the inner side of the silicon oxide film 11 that is formed by a CVD process. (FIG. 2(D))
When the gate insulating film has been formed, a gate electrode 12 having a major component of aluminum is formed. An anodized film 10 is formed on the gate electrode 12 by an anodic oxidation process after forming the pattern. The anodized film 10 electrically and mechanically protects the surface of the aluminum film, which has low heat resistance.
Next, an impurity is doped in order to form a source and a drain region. In this case, P (phosphor) ions are doped by a plasma doping process to fabricate a thin film transistor of an N-channel type.
In this step, P element is doped into the regions 112 and 114. The numeral 112 designates the source region, and the numeral 114 designates the drain region. Also, a region 113 designates a channel region.
After finishing the doping operation, a laser beam is irradiated so that portions destroyed by the doping operation are annealed and the dopant is activated.
Next, as shown by FIG. 2(E), a silicon nitride film 115 is formed to a thickness of 2000 Å, using a plasma CVD process, as an interlayer insulating film.
Further, a polyimide resin film 116 is formed by a spin coating process. When a resin film is used for the interlayer insulating film 116, the surface can be flattened.
A material of polyamide, polyimide amide, epoxy resin, acrylic resin or the like can be used for the material of the resin film.
Next, contact holes are formed and a source electrode 117 and a drain electrode 118 are formed. In this way, a thin film transistor is finished. (FIG. 2(E))
(Embodiment 2)
FIG. 3 and FIG. 4 show an outline of the fabrication steps of this embodiment. This embodiment shows a crystallizing method that is different from that in Embodiment 1.
First, as shown by FIG. 3(A), a silicon oxide film 202 is formed as an underlayer film on a glass substrate 201 to a thickness of 3000 Å using a plasma CVD process.
Next, an amorphous silicon film 203 is formed to a thickness of 4000 Å using a low pressure thermal CVD process (or plasma CVD process).
When the amorphous silicon film 203 has been formed, an extremely thin oxide film, not illustrated, is formed on the surface. In this case, the extremely thin oxide film is formed by irradiating a UV light in an atmosphere of oxygen. The oxide film has a function of promoting the wettability of a solution coated in later steps.
Next, a mask 15 comprising a silicon oxide film is formed. The mask is provided by forming a silicon oxide film having a thickness of 1000 Å by using a plasma CVD process and patterning the film.
An opening having a slit-like shape designated by numeral 16 is formed at the mask 15. The amorphous silicon film 203 is exposed at the region of the slit 16.
Next, a nickel acetate solution including 10 ppm of nickel (in terms of weight) is coated. Extraneous solution is removed by a spin coater.
As a result, a state where nickel element is brought into contact and held by the film, as designated by numeral 204, is provided. In this case, nickel element is brought into a state where it is brought into contact with and held by the surface of the amorphous silicon film 203 only at the region of the opening 16. (FIG. 3(A))
When the state shown by FIG. 3(A) has been provided, a heating treatment is carried out at 600° C. for 6 hours. In this step, as designated by numeral 17, crystal growth progresses in a direction in parallel with the substrate 201 from the region where nickel element has been selectively introduced (region of opening 16). Thus, a crystalline silicon film 205 is provided. (FIG. 3(B))
The heating treatment can be carried out at temperatures of 550° C. through 700° C., preferably 600° C. through 650° C. Incidentally, it is necessary to set the upper limit of the heating temperature below the strain point of the glass substrate.
Next, as shown by FIG. 3(C), a laser beam is irradiated on the crystalline silicon film 205 that has been provided through the above-described steps. In this case, a KrF excimer laser (wavelength 248 nm) is used.
The excimer laser is a pulse oscillation type of laser, and by irradiating the laser beam, instantaneous melting and solidification of the irradiated region repeatedly occurs.
By irradiating the excimer laser beam, a kind of nonequilibrium state is produced. Specifically, projections referred to as ridges are formed on the surface and the nickel element is partially segregated.
Under such a nonequilibrium state, when some energy is supplied from outside, the nickel element is easy to move.
When irradiation of the laser beam stops, as shown by FIG. 3(D), a mask 206 comprising a silicon oxide film is formed.
It is important that the region covered by the mask 206 avoids the region where nickel element was previously introduced.
The reason is that the region that has not been covered by the mask 206 is to be removed in later steps, and in this case, it is preferable to simultaneously remove a region where nickel element has been introduced and an initiation point of crystal growth (nickel element is included at comparatively high concentration).
Next, P (phosphor) element is doped by a plasma doping process (or ion implantation process).
The condition of doping is set such that the final concentration of P element is greater than the concentration of nickel element remaining in the film by at least one order of magnitude.
According to a measurement by the inventors, the maximum value of the concentration of nickel element remaining in the silicon film when the step of FIG. 3(C) has been finished is about 1×1019 atoms cm−3.
Accordingly, in this case, the doping condition is set such that the concentration of doped P element in the film is at least about 1×1020 atoms cm−3 or more.
The doping of P ions is carried out in regions 207 and 209 of FIG. 3(E). As a result of the doping, the regions 207 and 209 include P at high concentrations. Further, these regions are made amorphous by bombardment of implanted ions.
Further, a region designated by numeral 208 has not been doped with P element due to the presence of the mask 206. The region 208 maintains crystalline performance.
After doping with the P element, the sample is subjected to a heating treatment. In this case, the sample is arranged in a heating furnace with an atmosphere of a mixture gas of nitrogen (partial pressure ratio of 88%), oxygen (partial pressure ratio of 10%) and hydrogen chloride (partial pressure ratio of 2%), and the heating treatment is carried out at 400° C. for 30 minutes.
In this step, nickel element in the region 208 is moved to the regions 207 and 208 by the operation of P (phosphor). (FIG. 4(A))
The movement of nickel element is promoted by the fact that nickel element is easy to move because of the previous irradiation by the laser beam and the fact that the regions 207 and 209 have been made amorphous.
In particular, the fact that the regions 207 and 209 have been made amorphous and include much defect or strain plays a significant role in moving nickel element to these regions.
In this step, the regions 207 and 209 are brought into a porous state since the etching operation is excessively progressed locally. (The region cannot be utilized in forming an element at all.)
Incidentally, when the irradiation of the laser beam is not carried out, it is necessary to elevate the heating temperature to 600° C. or higher. The reason is that the nickel element is not so easy to move.
When the heating treatment has been finished, the mask 206 comprising a silicon oxide film is removed. Further, as shown by FIG. 4(B), a resist mask 210 is formed. The resist mask covers an area that is narrower than the area covered with the mask 206.
The silicon film is patterned by utilizing the resist mask 210. As a result, the region where nickel element is segregated is removed. (The above-described steps are referred to as lateral gettering.)
In this way, a pattern of a crystalline silicon film designated by the numeral 211 is obtained. The pattern is to constitute an activation layer of a thin film transistor in later steps. (FIG. 4(C))
With respect to the crystalline silicon film, nickel element in the film has been removed from the film.
When the pattern designated by the numeral 211 is obtained, the resist mask 210 is removed. Further, a gate insulating film is provided to cover the silicon film pattern 211, where films designated by numerals 200 and 211 are laminated.
In this case, a silicon oxide film 21 having a thickness of 1000 Å is formed by a plasma CVD process, and an oxide film 200 having a thickness of about 50 Å is formed by a thermal oxidation process, whereby the gate insulating film is formed. The preferred condition of this thermal oxidation is that the substrate temperature is 950° C., the atmosphere is oxygen mixed with 3% HCl, and the duration is one hour.
In this case, the thermally oxidized film 200 that is formed later is formed at the inner side of the silicon oxide film 21 that is formed by a CVD process. (FIG. 4(D))
When the gate insulating film has been formed, a gate electrode 22 having a major component of aluminum is formed. An anodized film 20 is formed on the gate electrode 22 by an anodized oxidation process after forming the pattern. The anodized film has a function of electrically and mechanically protecting the surface of the aluminum film, which has low heat resistance.
Next, an impurity is doped in order to form a source and a drain region. In this case, P (phosphor) ions are doped by a plasma doping process to fabricate a thin film transistor of an N-channel type.
In this step, P element is doped into regions 212 and 214. The numeral 212 designates the source region, and the numeral 214 designates the drain region. Further, a region 213 constitutes a channel region.
A laser beam is irradiated after finishing the doping process, so that portions destroyed by the doping process are annealed and the dopant is activated.
Next, as shown by FIG. 4(E), a silicon nitride film 215 is formed to a thickness of 2000 Å, using a plasma CVD process, as an interlayer insulating film.
Further, a polyimide resin film 216 is formed by a spin coating process. When a resin film is used for the interlayer insulating film, the surface can be flattened.
As a material of the resin film, a material of polyamide, polyimide amide, epoxy resin, acrylic resin or the like can be utilized.
Further, contact holes are formed and a source electrode 217 and a drain electrode 218 are formed. In this way, a thin film transistor is finished. (FIG. 4(E))
(Embodiment 3)
In this embodiment, in the step of gettering nickel of Embodiment 1 shown by FIG. 2(A) and the step of gettering nickel of Embodiment 2 shown by FIG. 4(A), a treatment is carried out by using a solution mixed with hydrogen fluoride and hydrogen peroxide instead of performing a heating treatment in an atmosphere including halogen element. In this case, nickel and nickel silicide are selectively etched.
(Embodiment 4)
This embodiment relates to a method of controlling a threshold value of a TFT in the constructions shown by Embodiment 1 and Embodiment 2.
In this case, a small amount of B (boron) is doped in forming the amorphous silicon film 103 shown by FIG. 1(A). The doping is carried out by mixing a small amount of B2H6 in a film-forming gas in the film-forming operation. Further, according to Embodiment 2, B is doped in forming the amorphous silicon film 203 shown by FIG. 3(A).
These operations are carried out to control a threshold value of the TFT by forming a channel region of weak P type.
As a method of doping, B (boron) may be doped by a plasma doping process or an ion implantation process after forming the amorphous silicon film.
Further, in fabricating the TFT of P-channel type, P (phosphor) is doped.
(Embodiment 5)
According to this embodiment, a silicon material is used as a gate electrode in the construction shown by Embodiment 1 and Embodiment 2.
(Embodiment 6)
According to this embodiment, an ion implantation process is used as a method of introducing a metal element for promoting the crystallization of silicon in the steps shown by Embodiment 1 and Embodiment 2. That is, the nickel element is introduced into the amorphous silicon film by accelerating nickel ions with an electric field and implanting the ions into the amorphous silicon film.
When the ion implantation process is used, a resulting advantage is that the amount of nickel element introduced into the film can be controlled finely.
(Embodiment 7)
This embodiment shows steps of fabricating a thin film transistor circuit that is formed in a complementary type by removing a metal element, as disclosed above.
First, as shown by FIG. 5(A), an underlayer film 302 comprising a silicon oxide film is formed on a glass substrate 301. Next, an amorphous silicon film 303 is formed. Further, a state in which nickel element is brought into contact with and held by the entire surface of the amorphous silicon film 303, as designated by the numeral 304, is provided by using a nickel acetate solution. (FIG. 5(A))
Next, the amorphous silicon film 303 is crystallized by performing a heating treatment. (FIG. 5(B))
Further, a laser beam is irradiated as shown by FIG. 5(C).
Next, masks 306 and 307, each comprising a silicon oxide film, are formed. (FIG. 5(D))
Next, heavy doping of P (phosphor) ions is carried out as shown by FIG. 5(E).
In this step, P ions are accelerated and implanted into regions 308, 310 and 312. Further, P ions are not accelerated and implanted to regions 309 and 311.
Next, as shown by FIG. 6(A), the nickel element is gettered by performing a heating treatment in an atmosphere that includes a mixture of oxygen and nitrogen.
Thereafter, the masks 306 and 307, each comprising a silicon oxide film, are removed. Then, resist masks 313 and 314 are formed as shown by FIG. 6(B).
Next, the silicon film is patterned by utilizing the resist masks 313 and 314. In this way, patterns each comprising a crystalline silicon film, as designated by numerals 315 and 316, are provided. One of the patterns is to constitute an activation layer of a TFT of the P-channel type, and the other is to constitute an activation layer of a TFT of the N-channel type. (FIG. 6(C))
Next, a gate insulating film comprising a thermally oxidized film 318 and a silicon oxide film 319, formed by a plasma CVD process, are formed.
Further, gate electrodes 321 and 323, each comprising aluminum, are formed, and anodized films 320 and 322 are formed on the surfaces.
Next, a source region 324 and a drain region 326 of a thin film transistor of the P-channel type are formed by selectively doping P and B by using a resist mask (not illustrated). Further, a source region 329 and a drain region 327 of a thin film transistor of the N-channel type are formed. (FIG. 6(D))
Further, a laser beam is irradiated and the source and drain regions are activated.
Next, a silicon nitride film 330 is formed and a polyimide resin film 331 is formed to create an interlayer insulating film. Then, contact holes are formed, and a source electrode 332 of a P-channel type TFT, a source electrode 334 of an N-channel type TFT, and a drain electrode 333 common to both TFTs are formed.
In this way, a circuit in which the P-channel type TFT and the N-channel type TFT are formed in a complementary type is obtained, as shown by FIG. 6(E).
While in this embodiment the amorphous silicon film 303 is crystallized by using the crystallizing method explained in Embodiment 1, the crystallizing method explained in Embodiment 2 can also be used.
(Embodiment 8)
This embodiment shows fabrication steps of a thin film transistor of a reverse stagger type. First, as shown by FIG. 7(A), a silicon oxide film 402 is formed as an underlayer film on a glass substrate 401.
Further, a gate electrode 403 comprising a metal silicide is formed. Further, a gate insulating film 404 is formed.
Next, an amorphous silicon film 405 is formed. Next, a mask 400 comprising a silicon oxide film is formed. An opening 40 is provided in the mask.
Next, a state where nickel element is brought into contact with and held by the surface, as designated by numeral 406, is provided by using a nickel acetate solution. (FIG. 7(A))
Next, the amorphous silicon film 405 is crystallized by a heating treatment. In this case, crystal growth is progressed in a direction indicated by an arrow mark 41.
In this way, a crystalline silicon film 407 is obtained. (FIG. 7(B))
Next, a laser beam is irradiated. (FIG. 7(C))
Next, a mask 408, comprising a silicon oxide film, is formed. (FIG. 7(D))
Next, heavy doping of P (phosphor) element is carried out. In this step, heavy doping of P element is carried out at regions 409 and 411. Further, doping is not performed at a region 410. (FIG. 7(E))
Next, a heating treatment is carried out in an atmosphere that includes a mixture of HCl, oxygen and nitrogen, and nickel element is gettered as shown by FIG. 8(A).
Thereafter, the mask 408 comprising a silicon oxide film is removed, and a resist mask 408 is newly formed. (FIG. 8(B))
Further, the silicon film is patterned by using the resist mask 412. In this way, a pattern of a silicon film, designated by numeral 413, remains. (FIG. 8(C))
Next, a gate electrode 414 is provided, and doping of an impurity of one conductive type is carried out, using the gate electrode as a mask. In this way, a source region 415 and a drain region 417 are formed. (FIG. 8(D))
Further, a laser beam is irradiated and the source and the drain regions are activated.
Next, a silicon nitride film 418 and a polyimide resin film 419 are formed to constitute an interlayer insulating film.
Further, contact holes are formed and a source electrode 420 and a drain electrode 421 are formed. In this way, a thin film transistor of a reverse stagger type is finished as shown by FIG. 8(E).
While in this embodiment the amorphous silicon film 405 is crystallized by using the crystallizing method explained in Embodiment 2, the crystallizing method explained in Embodiment 1 also can be used.
(Embodiment 9)
According to this embodiment, outlines of devices utilizing the present invention disclosed above are shown. FIGS. 9(A), 9(B), 9(C), 9(D), 9(E) and 9(F) show outlines of respective devices.
FIG. 9(A) shows a portable-type information-processing terminal that includes a communication function over a telephone network.
This electronic device is provided with an integrated circuit 2006 that includes thin film transistors inside its main body 2001. Further, a liquid crystal display 2005 of an active matrix type, a camera unit 2002 for taking pictures, and an operation switch 2004 are provided.
FIG. 9(B) shows an electronic device referred to as a head mount display. The device displays pictures pseudonymously in front of the eyes by mounting a main body 2101 onto the head by a band 2103. The pictures are formed by a liquid crystal display device 2102 in correspondence with left and right eyes.
In such an electronic device, a circuit that includes thin film transistors is used to make the device small-sized and light-weight.
FIG. 9(C) shows a device that displays map information or various information based on a signal from an artificial satellite. Information caught from a satellite by an antenna 2204 is processed by an electronic circuit installed inside a main body 2201, and necessary information is displayed at a liquid crystal display device 2202.
The operation of the device is carried out by operation switches 2203. Also, in such a device, a circuit that includes thin film transistors is used to reduce the size of the device.
FIG. 9(D) shows a portable telephone. The electronic device is provided with an antenna 2306, a voice output unit 2302, a liquid crystal display device 2304, operation switches 2305, and a voice input unit 2303 at a main body 2301.
An electronic device shown by FIG. 9(E) is a portable-type picture-taking device, usually referred to as a video camera. The electronic device includes a liquid crystal display 2402 attached to an opening-and-closing member and operation switches 2404 attached to an opening-and-closing member at a main body 2401.
Further, the main body 2401 includes a picture receiving unit 2406, an integrated circuit 2407, a voice input unit 2403, the operation switches 2404, and a battery 2405.
An electronic device shown by FIG. 9(F) is a projection type liquid crystal display device. The device is provided with a light source 2502, a liquid crystal display device 2503, and an optical system 2504 at a main body 2501 and has a function of projecting pictures onto a screen 2505.
Further, either a transmitting type or a reflecting type can be used for the liquid crystal display devices in the electronic devices shown above. The transmitting type has better display characteristics, and the reflecting type is advantageous when low power consumption or small-size and light-weight are important.
Further, a flat panel display of an EL (Electro-luminescence) display of an active matrix type, a plasma display, or the like can be utilized for the display device.
(Embodiment 10)
This embodiment shows a situation in which the fabrication steps of Embodiment 1 and Embodiment 2 are modified. FIGS. 10(A), 10(B), 10(C), 10(D) and 10(E) show fabrication steps of the embodiment.
First, an underlayer film 502 and a crystalline silicon film 503 are formed on a glass substrate 501 in accordance with the crystallizing steps shown by Embodiment 1 or Embodiment 2. Further, a mask 505 comprising a silicon oxide film (or silicon nitride film) is formed by using a resist mask 504. (FIG. 10(A))
Next, heavy doping of P (phosphor) is carried out in regions 506 and 507. (FIG. 10(B))
Next, isotropic ashing is carried out, and the resist mask 504 is isotropically retracted to a state designated by numeral 509. (FIG. 10(C))
Further, the mask 505 comprising a silicon oxide film is patterned again by utilizing the resist mask 509, and a pattern comprising a silicon oxide film designated by numeral 510 is formed. Further, the resist mask 509 is removed. (FIG. 10(D))
Further, a heating treatment is carried out in a state of FIG. 10(D), and nickel element is moved from a region 508 to the regions 506 and 507.
Then, the region of the silicon film designated by numeral 508 is patterned by utilizing the mask 510, in which a region 511 that is to constitute an activation layer of a thin film transistor in later steps is formed. Thereafter, a thin film transistor is fabricated in accordance with steps described in Embodiment 1 or other embodiments.
When the construction shown by this embodiment is adopted, the pattern of the silicon film designated by numeral 511 can be formed in a self-adjusting manner by utilizing the mask for implanting P ions.
(Embodiment 11)
This embodiment relates to a construction in which the fabrication steps described in Embodiment 1 and Embodiment 2 are improved. FIG. 11(A), 11(B), 11(C), 11(D), 11(E) and 11(F) show fabrication steps of this embodiment.
First, an underlayer film 602 is formed on a glass substrate 601. A crystalline silicon film 603 is formed in accordance with the crystallizing steps shown by Embodiment 1 or Embodiment 2.
Next, a mask 604 comprising a silicon oxide film (or silicon nitride film) is formed by utilizing a resist mask 605. (FIG. 11(A))
Next, heavy doping of P (phosphor) ions is carried out. In this step, heavy doping of P is carried out at regions 606 and 607. (FIG. 11(B))
Thereafter, the resist mask 605 is removed. Further, nickel element is moved from a region 608 to the regions 606 and 607 by performing a heating treatment as shown by FIG. 11(C).
Next, the region 608 of the silicon film is patterned, utilizing the mask 604 comprising the silicon oxide film, to provide a region designated by numeral 609.
Next, isotropic etching is carried out, utilizing the mask 604 comprising the silicon oxide film, during which side faces of the pattern 609 of the silicon film are etched and a pattern designated by numeral 610 is provided. (FIG. 11(D))
Next, the mask 604 is removed, and an activation layer of a thin film transistor is formed by using the pattern of the silicon film designated by numeral 610.
When the construction shown by embodiment is adopted, the mask 604 can be utilized twice, and the activation layer pattern 610 can be self-adjusting.
Further, it is important that regions 606 or 607, in which nickel element is not present at high concentrations, can be produced in the patterning operation of the silicon film shown by FIG. 11(E).
In performing the etching operation, there is a concern that the nickel element may be scattered and incorporated into a region that is ultimately to form an activation layer. For example, in the etching step during which the pattern 511 is formed, as shown by FIG. 10(E), there is a concern that the nickel element may be incorporated into the region 511 when objects that are to be removed by etching scatter from the regions 506 and 507.
However, in the step indicated by FIG. 11(E), this concern is alleviated since there are no regions 606 and 607 that include the nickel element at high concentrations.
(Embodiment 12)
This embodiment shows an example in which the fabrication steps shown in Embodiment 1 or Embodiment 2 are improved. First, an underlayer film 702 is formed on a glass substrate 701, as shown by FIG. 12(A), and a crystalline silicon film 703 is formed by utilizing the crystallizing method shown by Embodiment 1 or Embodiment 2.
Next, a mask, comprising a film laminated with a silicon oxide film 705 and a silicon nitride film 706, is formed by utilizing a resist mask 704. (FIG. 12(A))
Next, heavy doping of P element is carried out. (FIG. 12(B))
Next, nickel element is moved from a region 709 to regions 707 and 708 by performing a heating treatment. (FIG. 12(C))
Next, the mask 705 of the silicon oxide film is etched through isotropic etching by utilizing the mask 706 of the silicon nitride film. As a result, a mask 710 comprising a silicon oxide film, side faces of which have been etched, is provided. (FIG. 12(D))
Next, the mask 706 of the silicon nitride film is removed, and a pattern 711 of a silicon film is provided by using the mask 710 produced in the step of FIG. 7(D).
Also, in this step, the pattern of the silicon film designated by numeral 711 can be self-adjusting.
Further, the following steps may be carried out among the steps shown by FIGS. 12(A), 12(B), 12(C), 12(D) and 12(E).
When the step of FIG. 12(C) is finished, the regions of exposed silicon films, that is, the regions 707 and 708, are removed. Further, the steps shown by FIGS. 7(D) and 7(E) are carried out.
Then, in forming the pattern of the silicon film designated by the numeral 711, the influence of nickel element contained in the regions 707 and 708 at high concentrations can be excluded.
By utilizing the invention disclosed in the specification, when a thin film transistor is fabricated by utilizing a metal element for promoting the crystallization of silicon, the concentration of the metal element remaining in an activation layer can be reduced. Further, problems of dispersion or unstableness can be improved.

Claims (38)

What is claimed is:
1. A method of manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing at least a part of said semiconductor film with a catalyst metal for promoting crystallization of said amorphous silicon;
first heating said semiconductor film and said catalyst metal to crystallize said semiconductor film;
forming a mask over a portion of the crystallized semiconductor film;
introducing an impurity ion selectively into another portion of said crystallized semiconductor film by using said mask;
second heating said crystallized semiconductor film after the introduction of said impurity ion whereby the catalyst metal present in the portion below said mask shifts into said another portion; and
removing said another portion to form an active region of the semiconductor device by utilizing the portion below said mask after the second heating.
2. A method according to claim 1 wherein said second heating is performed in an atmosphere containing oxygen.
3. A method according to claim 1 wherein said catalyst metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au and a combination thereof.
4. A method according to claim 1 wherein said impurity ion is phosphorus ion.
5. A method of manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing at least a part of said semiconductor film with a catalyst metal for promoting crystallization of said amorphous silicon;
first heating said semiconductor film and said catalyst metal to crystallize said semiconductor film;
irradiating the crystallized semiconductor film with a laser light after the first heating;
forming a mask over a portion of said crystallized semiconductor film;
introducing an impurity ion selectively into another portion of said crystallized semiconductor film by using said mask;
second heating said crystallized semiconductor film after the introduction of said impurity ion whereby the catalyst metal present in the portion below said mask shifts into said another portion; and
removing said another portion to form an active region of the semiconductor device by utilizing the portion below said mask after the second heating.
6. A method according to claim 5 wherein said second heating is performed in an atmosphere containing oxygen.
7. A method according to claim 5 wherein said catalyst metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au and a combination thereof.
8. A method according to claim 5 wherein said impurity ion is phosphorus ion.
9. A method of manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing a selected region of said semiconductor film with a catalyst metal for promoting crystallization of said amorphous silicon;
first heating said semiconductor film and said catalyst metal to crystallize said semiconductor film wherein crystals grow from said selected region horizontally through the semiconductor film;
forming a mask over a portion of the crystallized semiconductor film;
providing an impurity ion selectively with another portion of said crystallized semiconductor film by using said mask;
second heating said crystallized semiconductor film after the provision of said impurity ion whereby the catalyst metal present in the portion below said mask shifts into said another portion; and
removing said another portion to form an active region of the semiconductor device by utilizing the portion below said mask after the second heating.
10. A method according to claim 9 wherein said second heating is performed in an atmosphere containing oxygen.
11. A method according to claim 9 wherein said catalyst metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au and a combination thereof.
12. A method according to claim 9 wherein said impurity ion is phosphorus ion.
13. A method according to claim 9 wherein said mask is located so as not to cover said selected region.
14. A method of manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing a selected region of said semiconductor film with a catalyst metal for promoting crystallization of said amorphous silicon;
first heating said semiconductor film and said catalyst metal to crystallize said semiconductor film wherein crystals grow from said selected region horizontally through the semiconductor film;
irradiating the crystallized semiconductor film with a laser light after said first heating;
forming a mask over a portion of said crystallized semiconductor film;
introducing an impurity ion selectively into another portion of said crystallized semiconductor film by using said mask;
second heating said crystallized semiconductor film after the introduction of said impurity ion whereby the catalyst metal present in the portion below said mask shifts into said another portion; and
removing said another portion to form an active region of the semiconductor device by utilizing the portion below said mask after the second heating.
15. A method according to claim 14 wherein said second heating is performed in an atmosphere containing oxygen.
16. A method according to claim 14 wherein said catalyst metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au and a combination thereof.
17. A method according to claim 14 wherein said impurity ion is phosphorus ion.
18. A method according to claim 14 wherein said mask is located so as not to cover said selected region.
19. A method of manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing at least a part of said semiconductor film with a catalyst metal for promoting crystallization of said amorphous silicon;
first heating said semiconductor film and said catalyst metal to crystallize said semiconductor film;
forming a mask over a portion of the crystallized semiconductor film;
providing an impurity ion selectively with another portion of said crystallized semiconductor film by using said mask;
second heating said crystallized semiconductor film after the provision of said impurity ion whereby the catalyst metal present in the portion is absorbed by said another portion;
forming a semiconductor island from said portion of said crystallized semiconductor film below said mask by pattering after the second heating;
depositing a gate insulating film comprising silicon oxide on said semiconductor island by vapor deposition; and
thermally oxidizing a surface of the semiconductor island after the deposition of the gate insulating film.
20. A method according to claim 19 wherein said thermally oxidizing is conducted in an oxidizing atmosphere containing chlorine.
21. A method of manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing a selected region of said semiconductor film with a catalyst metal for promoting crystallization of said amorphous silicon;
first heating said semiconductor film and said catalyst metal to crystallize said semiconductor film wherein crystals grow from said selected region horizontally through said semiconductor film;
forming a mask over a portion of the crystallized semiconductor film;
introducing an impurity ion selectively into another portion of said crystallized semiconductor film by using said mask;
second heating said crystallized semiconductor film after the introduction of said impurity ion whereby the catalyst metal present in the portion is absorbed by said another portion;
forming a semiconductor island from said portion of said crystallized semiconductor film below said mask by pattering after the second heating;
depositing a gate insulating film comprising silicon oxide on said semiconductor island by vapor deposition; and
thermally oxidizing a surface of the semiconductor island after the deposition of the gate insulating film.
22. A method according to claim 21 wherein said thermally oxidizing is conducted in an oxidizing atmosphere containing chlorine.
23. A method according to claim 19 wherein said catalyst metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au and a combination thereof.
24. A method according to claim 21 wherein said catalyst metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au and a combination thereof.
25. A method of manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing at least a part of said semiconductor film with a catalyst metal for promoting crystallization of said amorphous silicon;
first heating said semiconductor film and said catalyst metal to crystallize said semiconductor film;
forming a mask over a portion of the crystallized semiconductor film;
providing an impurity ion selectively with another portion of said crystallized semiconductor film by using said mask;
second heating said crystallized semiconductor film after the provision of said impurity ion whereby the catalyst metal present in the portion below said mask shifts into said another portion; and
removing said another portion to form an active region of the semiconductor device outside of said another portion where the catalyst metal is segregated after the second heating step.
26. A method according to claim 25 wherein said second heating is performed in an atmosphere containing oxygen.
27. A method according to claim 25 wherein said catalyst metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Au and a combination thereof.
28. A method of manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing at least a part of said semiconductor film with a catalyst metal for promoting crystallization of said amorphous silicon;
first heating said semiconductor film and said catalyst metal to crystallize said semiconductor film;
forming a mask over a portion of the crystallized semiconductor film;
introducing an impurity ion selectively into another portion of said crystallized semiconductor film by using said mask;
second heating said crystallized semiconductor film after the introduction of said impurity ion whereby the catalyst metal present in the portion below said mask shifts into said another portion; and
removing said another portion to form an active region of the semiconductor device below said mask after the second heating step,
wherein the catalyst metal has been removed to outside of said active region of the semiconductor device.
29. A method according to claim 28 wherein said second heating is performed in an atmosphere containing oxygen.
30. A method according to claim 28 wherein said catalyst metal is selected from the group consisting of Fe, Co, Ni, Ru, Pd, Os, Ir, Pt, Cu, Au and a combination thereof.
31. A method according to claim 1 wherein said semiconductor device constitutes an electronic device selected from the group consisting of a portable type information processing terminal device, a head mount display, a displaying map information device based on a signal from an artificial satellite, a video camera, a portable telephone, a reflection type projection display, a transmission type projection display, an electroluminescence display and a plasma display.
32. A method according to claim 5 wherein said semiconductor device constitutes an electronic device selected from the group consisting of a portable type information processing terminal device, a head mount display, a displaying map information device based on a signal from an artificial satellite, a video camera, a portable telephone, a reflection type projection display, a transmission type projection display, an electroluminescence display and a plasma display.
33. A method according to claim 9 wherein said semiconductor device constitutes an electronic device selected from the group consisting of a portable type information processing terminal device, a head mount display, a displaying map information device based on a signal from an artificial satellite, a video camera, a portable telephone, a reflection type projection display, a transmission type projection display, an electroluminescence display and a plasma display.
34. A method according to claim 14 wherein said semiconductor device constitutes an electronic device selected from the group consisting of a portable type information processing terminal device, a head mount display, a displaying map information device based on a signal from an artificial satellite, a video camera, a portable telephone, a reflection type projection display, a transmission type projection display, an electroluminescence display and a plasma display.
35. A method according to claim 19 wherein said semiconductor device constitutes an electronic device selected from the group consisting of a portable type information processing terminal device, a head mount display, a displaying map information device based on a signal from an artificial satellite, a video camera, a portable telephone, a reflection type projection display, a transmission type projection display, an electroluminescence display and a plasma display.
36. A method according to claim 21 wherein said semiconductor device constitutes an electronic device selected from the group consisting of a portable type information processing terminal device, a head mount display, a displaying map information device based on a signal from an artificial satellite, a video camera, a portable telephone, a reflection type projection display, a transmission type projection display, an electroluminescence display and a plasma display.
37. A method according to claim 25 wherein said semiconductor device constitutes an electronic device selected from the group consisting of a portable type information processing terminal device, a head mount display, a displaying map information device based on a signal from an artificial satellite, a video camera, a portable telephone, a reflection type projection display, a transmission type projection display, an electroluminescence display and a plasma display.
38. A method according to claim 28 wherein said semiconductor device constitutes an electronic device selected from the group consisting of a portable type information processing terminal device, a head mount display device, a displaying map information device based on a signal from an artificial satellite, a video camera, a portable telephone, a reflection type projection display, a transmission type projection display, an electroluminescence display and a plasma display.
US09/014,639 1997-01-28 1998-01-28 Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication Expired - Lifetime US6355509B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP9-029551 1997-01-28
JP9-029552 1997-01-28
JP02955197A JP4190600B2 (en) 1997-01-28 1997-01-28 Method for manufacturing semiconductor device
JP02955297A JP3696710B2 (en) 1997-01-28 1997-01-28 Method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
US6355509B1 true US6355509B1 (en) 2002-03-12

Family

ID=26367763

Family Applications (1)

Application Number Title Priority Date Filing Date
US09/014,639 Expired - Lifetime US6355509B1 (en) 1997-01-28 1998-01-28 Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication

Country Status (2)

Country Link
US (1) US6355509B1 (en)
KR (1) KR19980071187A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020094612A1 (en) * 2001-01-18 2002-07-18 Osamu Nakamura Method of manufacturing semiconductor device
US20030089911A1 (en) * 2001-08-27 2003-05-15 Kenji Kasahara Semiconductor device and method of manufacturing the same
US20030122129A1 (en) * 2000-12-19 2003-07-03 Shunpei Yamazaki Method of manufacturing semiconductor device and semiconductor device
US6620711B2 (en) * 1998-08-18 2003-09-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20040038441A1 (en) * 2002-08-22 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
US20040058486A1 (en) * 1997-07-24 2004-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabricating method thereof
US20040137671A1 (en) * 2002-12-31 2004-07-15 Lg. Philips Lcd Co., Ltd. Method of crystallizing amorphous silicon for use in thin film transistor
US20040135583A1 (en) * 2001-05-01 2004-07-15 Gunton Bruce Stanley Monitoring apparatus
US20050003594A1 (en) * 2002-11-05 2005-01-06 Semiconductor Energy Laboratory Co., Ltd. Laser doping processing method and method for manufacturing semiconductor device
US20050095760A1 (en) * 1997-10-21 2005-05-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6893503B1 (en) 1997-03-27 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20050142702A1 (en) * 2003-12-25 2005-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20050208710A1 (en) * 2001-11-28 2005-09-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20060134891A1 (en) * 2003-12-25 2006-06-22 Semiconductor Energy Laboratory Co., Ld. Method for manufacturing semiconductor device
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US7837792B2 (en) 1995-08-02 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5106768A (en) * 1990-08-31 1992-04-21 United Microelectronics Corporation Method for the manufacture of CMOS FET by P+ maskless technique
US5569936A (en) * 1993-03-12 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing crystallization catalyst
US5643826A (en) * 1993-10-29 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5654203A (en) * 1993-12-02 1997-08-05 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing a thin film transistor using catalyst elements to promote crystallization
US5700333A (en) * 1995-03-27 1997-12-23 Semiconductor Energy Laboratory Co., Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US5811328A (en) * 1991-06-19 1998-09-22 Semiconductor Energy Laboratory Co, Ltd. Electro-optical device and thin film transistor and method forming the same
US5843225A (en) 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
US5893730A (en) * 1996-02-23 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
US5897347A (en) 1993-02-15 1999-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
US5915174A (en) 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US5977559A (en) 1995-09-29 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor having a catalyst element in its active regions
US6027987A (en) * 1996-10-31 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a crystalline semiconductor
US6162704A (en) * 1997-02-12 2000-12-19 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5106768A (en) * 1990-08-31 1992-04-21 United Microelectronics Corporation Method for the manufacture of CMOS FET by P+ maskless technique
US5811328A (en) * 1991-06-19 1998-09-22 Semiconductor Energy Laboratory Co, Ltd. Electro-optical device and thin film transistor and method forming the same
US5843225A (en) 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
US5897347A (en) 1993-02-15 1999-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
US5569936A (en) * 1993-03-12 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing crystallization catalyst
US5643826A (en) * 1993-10-29 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5654203A (en) * 1993-12-02 1997-08-05 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing a thin film transistor using catalyst elements to promote crystallization
US5915174A (en) 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US5700333A (en) * 1995-03-27 1997-12-23 Semiconductor Energy Laboratory Co., Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US5961743A (en) 1995-03-27 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US5977559A (en) 1995-09-29 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor having a catalyst element in its active regions
US5893730A (en) * 1996-02-23 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
US6027987A (en) * 1996-10-31 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a crystalline semiconductor
US6162704A (en) * 1997-02-12 2000-12-19 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060213550A1 (en) * 1995-03-27 2006-09-28 Semiconductor Energy Laboratory Co., Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US7837792B2 (en) 1995-08-02 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6893503B1 (en) 1997-03-27 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6974732B2 (en) 1997-07-24 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device method of manufacturing
US20040058486A1 (en) * 1997-07-24 2004-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabricating method thereof
US20050095760A1 (en) * 1997-10-21 2005-05-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7166500B2 (en) 1997-10-21 2007-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6620711B2 (en) * 1998-08-18 2003-09-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20060255370A1 (en) * 2000-12-19 2006-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and semiconductor device
US7821005B2 (en) 2000-12-19 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and semiconductor device
US20030122129A1 (en) * 2000-12-19 2003-07-03 Shunpei Yamazaki Method of manufacturing semiconductor device and semiconductor device
US20020094612A1 (en) * 2001-01-18 2002-07-18 Osamu Nakamura Method of manufacturing semiconductor device
US20060270128A1 (en) * 2001-01-18 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US20050142818A1 (en) * 2001-01-18 2005-06-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US20040135583A1 (en) * 2001-05-01 2004-07-15 Gunton Bruce Stanley Monitoring apparatus
US20030089911A1 (en) * 2001-08-27 2003-05-15 Kenji Kasahara Semiconductor device and method of manufacturing the same
US6756608B2 (en) 2001-08-27 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7449376B2 (en) 2001-11-28 2008-11-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20050208710A1 (en) * 2001-11-28 2005-09-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20040038441A1 (en) * 2002-08-22 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
US6861338B2 (en) 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
US20050029523A1 (en) * 2002-08-22 2005-02-10 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
US6917079B2 (en) 2002-08-22 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
US7504325B2 (en) 2002-11-05 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Laser doping processing method and method for manufacturing semiconductor device
US20050003594A1 (en) * 2002-11-05 2005-01-06 Semiconductor Energy Laboratory Co., Ltd. Laser doping processing method and method for manufacturing semiconductor device
US20040137671A1 (en) * 2002-12-31 2004-07-15 Lg. Philips Lcd Co., Ltd. Method of crystallizing amorphous silicon for use in thin film transistor
US6949422B2 (en) * 2002-12-31 2005-09-27 Lg Philips Lcd Co., Ltd. Method of crystalizing amorphous silicon for use in thin film transistor
US20080003729A1 (en) * 2003-12-25 2008-01-03 Hideto Ohnuma Semiconductor device and manufacturing method thereof
US7276402B2 (en) 2003-12-25 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20060134891A1 (en) * 2003-12-25 2006-06-22 Semiconductor Energy Laboratory Co., Ld. Method for manufacturing semiconductor device
US7507617B2 (en) 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7625785B2 (en) 2003-12-25 2009-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20050142702A1 (en) * 2003-12-25 2005-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
KR19980071187A (en) 1998-10-26

Similar Documents

Publication Publication Date Title
US6448118B2 (en) Semiconductor film manufacturing with selective introduction of crystallization promoting material
KR100574581B1 (en) Method of manufacturing a semiconductor device
KR100634724B1 (en) Method for manufacturing semiconductor device
US6355509B1 (en) Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication
US5605846A (en) Method for manufacturing semiconductor device
US7749819B2 (en) Method for manufacturing semiconductor device
KR100572819B1 (en) Method of making semiconductor device
US6083801A (en) Manufacturing method of semiconductor and manufacturing method of semiconductor device
US7122450B2 (en) Process for manufacturing a semiconductor device
US5869362A (en) Method of manufacturing semiconductor device
JPH10242475A (en) Semiconductor device and its manufacture
JP4190600B2 (en) Method for manufacturing semiconductor device
JP3696710B2 (en) Method for manufacturing semiconductor device
JP4317105B2 (en) Method for manufacturing semiconductor device
US7300826B2 (en) Manufacturing method of semiconductor and manufacturing method of semiconductor device

Legal Events

Date Code Title Description
AS Assignment

Owner name: SEMICONDUCTOR ENERGY LABORATORY CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:YAMAZAKI, SHUNPEI;REEL/FRAME:009260/0852

Effective date: 19980515

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12