US7038174B2 - Heating device for heating semiconductor wafers in thermal processing chambers - Google Patents
Heating device for heating semiconductor wafers in thermal processing chambers Download PDFInfo
- Publication number
- US7038174B2 US7038174B2 US10/903,424 US90342404A US7038174B2 US 7038174 B2 US7038174 B2 US 7038174B2 US 90342404 A US90342404 A US 90342404A US 7038174 B2 US7038174 B2 US 7038174B2
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- Prior art keywords
- wafer
- light energy
- heating device
- semiconductor wafer
- heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/14—Arrangements of heating devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
Definitions
- a thermal processing chamber as used herein refers to a device that rapidly heats objects, such as semiconductor wafers.
- Such devices typically include a substrate holder for holding a semiconductor wafer and a light source that emits light energy for heating the wafer.
- the semiconductor wafers are heated under controlled conditions according to a preset temperature regime.
- thermal processing chambers also typically include temperature sensing devices, such as pyrometers, that sense the radiation being emitted by the semiconductor wafer at a selected band of wavelengths. By sensing the thermal radiation being emitted by the wafer, the temperature of the wafer can be calculated with reasonable accuracy.
- thermal processing chambers can also contain thermocouples for monitoring the temperature of the wafers.
- Thermocouples measure the temperature of objects by direct contact.
- semiconductor heating processes require a wafer to be heated to high temperatures so that various chemical and physical reactions can take place as the wafer is fabricated into a device.
- rapid thermal processing which is one type of processing
- semiconductor wafers are typically heated by an array of lights to temperatures, for instance, from about 400° C. to about 1,200° C., for times which are typically less than a few minutes.
- one main goal is to heat the wafers as uniformly as possible.
- Temperature gradients can be created within the wafer due to various factors. For instance, due to the increased surface area to volume ratio, the edges of semiconductor wafers tend to have a cooling rate and a heating rate that are different than the center of the wafer. The energy absorption characteristics of wafers can also vary from location to location. Additionally, when gases are circulated in the chamber, the gases can create cooler areas on the wafer due to convection.
- the present invention recognizes and addresses the foregoing disadvantages and others of prior art constructions and methods.
- Another object of the present invention is to provide a thermal processing chamber having an improved lamp configuration for heating the wafers uniformly.
- Still another object of the present invention to provide a heating device for use in thermal processing chambers that contains a plurality of lamps which form overlapping heating zones on a wafer being heated.
- Another object of the present invention is to provide a heating device for use in thermal processing chambers that contains tuning devices spaced between heating lamps for uniformly heating wafers with high levels of controllability.
- Another object of the present invention is to provide a heating device for use in thermal processing chambers containing a plurality of lamps for heating a semiconductor wafer and at least one passive optical element placed amongst the lamps which redirects light energy being emitted by the lamps for heating semiconductor wafers more uniformly.
- Still another object of the present invention is to provide a heating device for use in thermal processing chambers that contains passive optical elements having a ruled prismatic surface which is positioned within the heating device in order to redirect light energy being emitted by the heating device onto a semiconductor wafer in a manner that heats the wafer more uniformly.
- the apparatus includes a thermal processing chamber adapted to contain a semiconductor wafer.
- a substrate holder can be contained within the chamber upon which the wafer is held.
- a heating device is placed in communication with the thermal processing chamber which emits thermal light energy onto the wafer held on the substrate holder.
- the heating device can include an assembly of light energy sources which are positioned, for instance, to heat different zones of the wafer. The light energy sources form an irradiance distribution across a surface of the wafer.
- either the semiconductor wafer can be rotated or the light energy sources can be rotated.
- the light energy sources form radial heating zones on the wafer which aid in heating the wafer uniformly and provide good temporal control during the heating cycle.
- the heating device further includes at least one tuning device positioned amongst the light energy sources.
- the tuning device is configured to change the irradiance distribution of the light energy sources in a manner for more uniformly heating the semiconductor wafer.
- the tuning device can be an active device which emits light radiation onto a determined location of the wafer or can be a passive device, which redirects light radiation being emitted by the light energy sources contained in the heating device for adjusting the irradiance distribution of the light energy sources.
- the support structure to which the light energy source is mounted includes a tiltable lever arm.
- the lever arm is tiltable for directing light energy being emitted by the tuning device to a particular location.
- the system of the present invention can include as many tuning devices as are required for uniformly heating wafers.
- the number of tuning devices incorporated into a particularly system will generally depend upon numerous factors, including the configuration of the light energy sources.
- the light energy sources can be placed in concentric rings and tuning devices can be placed in between the rings of lamps.
- the apparatus of the present invention can include at least one temperature sensing device which senses the temperature of the wafer at a plurality of locations.
- the temperature sensing device can be a plurality of pyrometers, one pyrometer with multiple viewing ports, or one or more thermocouples.
- the temperature sensing devices can be in communication with a controller, such as a microprocessor, which determines the temperature of the wafer.
- the controller in turn, can be in communication with the power supply of the light energy sources for controlling the amount of heat being emitted by the light energy sources in response to the temperature of the wafer.
- the controller can be configured, for instance, to control the amount of light energy being emitted by each light energy source or can control different groups of the light energy sources.
- the controller can be configured to also control the amount of light energy that is being emitted by a tuning device installed in accordance with the present invention.
- the controller can be used to control the tuning device independent of the light energy sources.
- the controller can also be configured to be capable of automatically moving the support structure upon which the tuning device is mounted in order to change and adjust the location of where the light energy being emitted by the tuning device contacts the wafer.
- the light energy sources used in the heating device of the present invention can be, for instance, lamps, such as tungsten-halogen lamps.
- the lamps can be substantially vertically oriented with respect to the semiconductor wafer, or can be oriented horizontally.
- the lamps can be connected to a mounting base.
- the mounting base can include reflective devices for directing the light energy being emitted by the lamps onto the wafer.
- the reflective devices can be polished annular surfaces surrounding the lamps or, alternatively, can be in the shape of plates that extend adjacent to the lamps.
- the heating device includes reflective plates which extend beyond the length of the lamps in a direction perpendicular to the semiconductor wafer.
- the optical elements can include a ruled prismatic surface for reflecting light radiation in a specified manner.
- the ruled prismatic surface can have a fixed pitch and a fixed facet angle or a fixed pitch with a variable facet angle.
- the ruled prismatic surface can be made from a highly reflective material, such as a dielectric material or a metal, such as gold.
- the optical element can include a diffuse surface, which scatters light energy in all directions.
- the diffuse surface can be made from, for instance, a rough surface.
- the passive tuning device has an adjustable position with respect to the light energy sources contained in the heating device.
- the tuning device can be placed at different angles with respect to the light energy sources and at a different height.
- the light energy sources can be all attached to a mounting base and can all be substantially vertically oriented.
- the tuning device can be designed to be insertable in and out of the mounting base so as to be positioned at a different height with respect to the light energy sources.
- the position of the tuning device can be controlled using a controller if desired.
- FIG. 2 is a plan view of one embodiment of a heating device that may be used in thermal processing chambers made in accordance with the present invention
- FIG. 4 is a plan view of an alternative embodiment of a heating device that may be used in thermal processing chambers in accordance with the present invention.
- FIG. 5 is a partial perspective view of an alternative embodiment of a tuning device made in accordance with the present invention.
- FIG. 6 is an enlarged portion of the tuning device shown in FIG. 5 illustrating how light energy may be reflected off the surface of the device.
- FIG. 7 is a graphical representation of the results obtained in the Example which follows.
- a rapid thermal processing apparatus uses intense light to heat a semiconductor wafer as part of the manufacturing process of integrated circuits. Exposure to light energy, which is also referred to herein as light energy, causes a rapid increase in the temperature of a semiconductor wafer and allows processing times to be relatively short. In rapid thermal processing systems, it is important to radiate the wafer with very high intensity light in a very uniform and controlled fashion. As stated above, the difficulty with current devices is that the requirements for the intensity of the radiated light and the ability to heat wafers uniformly are very difficult to achieve.
- the heating device in communication with the thermal processing chamber further contains tuning devices which are designed to modify the irradiance distribution of the heating lamps for more uniformly heating the semiconductor wafer.
- the tuning devices allow fine adjustments to be made to the wafer irradiance distribution pattern in order to heat the wafer under a more controlled temperature regime and more uniformly.
- the tuning device can be, in one embodiment, a localized and focused source of light energy that can be directed onto a particular location on the wafer. In an alternative embodiment, however, the tuning device can be a passive device which redirects light energy being emitted by the heating lamps in a manner that heats the wafer more uniformly.
- an inert gas can be fed to chamber 12 through gas inlet 18 for preventing any unwanted or undesirable side reactions from occurring within the chamber.
- gas inlet 18 and gas outlet 20 can be used to pressurize chamber 12 .
- a vacuum can also be created in chamber 12 when desired, using gas outlet 20 or an additional larger outlet positioned beneath the level of the wafer.
- substrate holder 15 can be adapted to rotate wafer 14 using a wafer rotation mechanism 21 .
- Rotating the wafer promotes greater temperature uniformity over the surface of the wafer and promotes enhanced contact between wafer 14 and any gases introduced into the chamber.
- chamber 12 is also adapted to process optical parts, films, fibers, ribbons, and other substrates having any particular shape.
- a heat source or heating device generally 22 is included in communication with chamber 12 for heating wafer 14 during processing.
- Heating device 22 includes a plurality of lamps 24 , such as tungsten-halogen lamps. As shown in FIG. 1 , lamps 24 are placed above wafer 14 . It should be understood, however, that lamps 24 may be placed at any particular location. Further, additional lamps could be included within system 10 if desired.
- lamps 24 as a heat source is generally preferred. For instance, lamps have much higher heating and cooling rates than other heating devices, such as electrical elements or conventional furnaces. Lamps 24 create a rapid isothermal processing system that provide instantaneous energy, typically requiring a very short and well controlled start up period. The flow of energy from lamps 24 can also be abruptly stopped at any time. As shown in the figure, lamps 24 are equipped with a gradual power controller 25 that can be used to increase or decrease the light energy being emitted by any of the lamps.
- the lamps can be associated with a reflector or a set of reflectors.
- mounting base 34 can include a reflective surface that surrounds the lamps.
- reflective angular recesses can be formed into a mounting base 34 for directing the light energy onto the wafer.
- heating device 22 can include arc-shaped reflector plates 36 which are located in between the concentric rings of lamps 24 .
- Reflector plates 36 are substantially vertically oriented with respect to a wafer placed in communication with heating device 22 and extend at least a portion of the length of lamps 24 . More particularly, arc-shaped reflector plates 36 can extend less than the length of lamps 24 about the same length as lamps 24 or beyond the length of lamps 24 . Reflector plates 36 serve to direct the light energy being emitted by the concentric rings of lamps. Besides arc-shaped reflector plates 36 , however, it should be understood that various other reflective devices may be used in heating device 22 .
- thermal processing chamber 12 includes plurality of radiation sensing devices generally 27 .
- Radiation sensing devices 27 include a plurality of optical fibers or light pipes 28 which are, in turn, in communication with a plurality of corresponding light detectors 30 .
- Optical fibers 28 are configured to receive thermal energy being emitted by wafer 14 at a particular wavelength. The amount of sensed radiation is then communicated to light detectors 30 which generate a usable voltage signal for determining the temperature of the wafer which can be calculated based, in part, on Planck's Law.
- each optical fiber 28 in combination with a light detector 30 comprises a pyrometer.
- the optical fibers 28 are routed to a single but multiplexing radiation sensing device.
- thermocouples may be incorporated into the system for monitoring the temperature of the wafer at a single location or at a plurality of locations.
- the thermocouples can be placed in direct contact with the wafer or can be placed adjacent the wafer from which the temperature can be extrapolated.
- System 10 further includes a system controller 50 which can be, for instance, a microprocessor.
- Controller 50 receives voltage signals from light detectors 30 that represent the radiation amounts being sampled at the various locations. Based on the signals received, controller 50 is configured to calculate the temperature of wafer 14 at different locations.
- System controller 50 as shown in FIG. 1 can also be in communication with lamp power controller 25 .
- controller 50 can determine the temperature of wafer 14 , and, based on this information, control the amount of thermal energy being emitted by lamps 24 . In this manner, instantaneous adjustments can be made regarding the conditions within reactor 12 for processing wafer 14 within carefully controlled limits.
- controller 50 can also be used to automatically control other elements within the system. For instance, controller 50 can be used to control the flow rate of gases entering chamber 12 through gas inlet 18 . As shown, controller 50 can further be used to control the rate at which wafer 14 is rotated within the chamber.
- heating device 22 includes a plurality of light energy sources, such as lamps 24 that are secured to a mounting base 34 .
- lamps 24 are arranged in five concentric rings which each serve to heat a separate radial zone on a wafer. It should be understood, however, that many other lamp configurations may be used without limitation.
- heating device 22 further includes tuning devices 40 which, in this embodiment, are generally positioned in between the concentric rings of lamps 24 .
- Tuning devices 40 are designed to emit controlled and focused amounts of light energy onto particular locations of a semiconductor wafer being heated.
- the tuning devices are provided in order to make fine adjustments to the irradiance distribution produced by lamps 24 in order to more precisely heat the wafers.
- tuning devices 40 can be used to emit controlled amounts of light energy between the radial heating zones located on the wafer.
- Tuning devices 40 as shown in FIG. 2 are active localized sources of focused light energy.
- the tuning devices can be, for instance, laser diodes having a relatively high power.
- tuning devices 40 can be a lamp, such as a tungsten halogen lamp, in operative association with one or more focusing lenses.
- light energy source 42 and focusing lenses 44 and 46 can be mounted to a support structure 60 .
- Support structure 60 can include a tiltable lever arm which allows for an adjustment to be made in the position of the tuning device.
- support structure 60 can be tilted for focusing light energy being emitted by the light energy source onto desired locations of wafer 14 .
- the tuning devices of the present invention can also comprise passive sources which are used to adjust and vary the irradiance distribution of the heating lamps in a manner that enhances wafer temperature uniformity.
- FIG. 4 One embodiment of a system using passive tuning devices is illustrated in FIG. 4 .
- Heating device 122 includes an assembly of lamps 124 secured to a mounting base 134 , which includes a base plate 148 .
- lamps 124 are spaced at various locations on mounting base 134 and are designed to form many different radial heating zones on a wafer.
- heating device 122 further includes tuning devices 140 which are positioned adjacent to selected lamps.
- tuning devices 140 are optical elements designed to redirect a portion of the radiant energy being emitted by the lamp assembly, thereby allowing fine adjustments to the irradiance distribution of the heater device onto a wafer located below the assembly.
- the optical elements are rectangular shaped and are inserted into heating device 122 generally near one or more of the lamps 124 .
- Heater device 122 can be designed such that the depth of insertion of tuning devices 140 and the azimuthal angle of the tuning devices can be adjusted.
- tuning devices 140 can be inserted through an opening formed into base plate 148 and can be extended into the heater device any desired length in relation to the length of lamps 124 .
- the angle at which the tuning devices are inserted can be adjusted.
- tuning devices 140 In order to redirect the light energy that is being emitted by lamps 124 , tuning devices 140 include at least one surface having desired optical characteristics. In modifying the irradiance distribution of the lamps, tuning devices 140 can either reflect light energy, refract light energy, or can even absorb light energy.
- tuning device 140 includes a ruled prismatic surface 162 .
- surface 162 is serrated and mirrored.
- the prismatic surface illustrated in FIG. 5 employs a fixed pitch with a fixed facet angle. It should be understood, however, that the surface could also employ a fixed pitch with a variable facet angle.
- tuning device 140 can also be made with a variable angle design. When using a variable angle design, tuning device 140 can be used to more accurately focus light radiation contacting surface 162 and more accurately redirect the light energy onto a particular location on the wafer being heated if desired.
- surface 162 of tuning device 140 can be planar and diffusing, causing light energy contacting the surface to scatter in all directions.
- a highly diffuse surface may be a rough but highly reflective surface on tuning device 140 .
- Using a diffuse surface may be less costly to produce but may not provide a similar amount of control as using a prismatic surface.
- tuning device 140 can be designed to either reflect light radiation, refract light radiation or absorb light radiation.
- tuning device 140 is coated with a highly reflective material, such as a dielectric material or a polished metal, such as gold, copper, or aluminum.
- tuning device 140 can be made, for instance, from quartz.
- a prismatic tuning device similar to the one illustrated in FIG. 5 was inserted into an array of light energy sources in a thermal processing chamber.
- the array of light energy sources included five concentric rings of vertically orientated lamps mounted to a base, similar to the heating device illustrated in FIG. 4 .
- the prismatic tuning device was positioned adjacent one of the lamps located on the second concentric ring from the center of the array of lamps.
- the tuning device of the present invention changed the irradiance distribution of the light energy sources.
- the tuning device only slightly modified the irradiance distribution.
- the tuning device of the present invention is well suited to making fine adjustments in the manner in which a wafer is illuminated in order to promote temperature uniformity.
Abstract
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Claims (24)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US10/903,424 US7038174B2 (en) | 1999-01-06 | 2004-07-30 | Heating device for heating semiconductor wafers in thermal processing chambers |
US11/399,085 US7608802B2 (en) | 1999-01-06 | 2006-04-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
US12/574,441 US8138451B2 (en) | 1999-01-06 | 2009-10-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/226,396 US6771895B2 (en) | 1999-01-06 | 1999-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
US10/903,424 US7038174B2 (en) | 1999-01-06 | 2004-07-30 | Heating device for heating semiconductor wafers in thermal processing chambers |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/226,396 Continuation US6771895B2 (en) | 1999-01-06 | 1999-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/399,085 Continuation US7608802B2 (en) | 1999-01-06 | 2006-04-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
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US20050008351A1 US20050008351A1 (en) | 2005-01-13 |
US7038174B2 true US7038174B2 (en) | 2006-05-02 |
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Application Number | Title | Priority Date | Filing Date |
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US09/226,396 Expired - Lifetime US6771895B2 (en) | 1999-01-06 | 1999-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
US09/478,247 Expired - Lifetime US6717158B1 (en) | 1999-01-06 | 2000-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
US10/903,424 Expired - Lifetime US7038174B2 (en) | 1999-01-06 | 2004-07-30 | Heating device for heating semiconductor wafers in thermal processing chambers |
US11/399,085 Expired - Fee Related US7608802B2 (en) | 1999-01-06 | 2006-04-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
US12/574,441 Expired - Fee Related US8138451B2 (en) | 1999-01-06 | 2009-10-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
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US09/226,396 Expired - Lifetime US6771895B2 (en) | 1999-01-06 | 1999-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
US09/478,247 Expired - Lifetime US6717158B1 (en) | 1999-01-06 | 2000-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
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US11/399,085 Expired - Fee Related US7608802B2 (en) | 1999-01-06 | 2006-04-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
US12/574,441 Expired - Fee Related US8138451B2 (en) | 1999-01-06 | 2009-10-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
Country Status (7)
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EP (1) | EP1141999A1 (en) |
JP (1) | JP2002534803A (en) |
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AU (1) | AU2224600A (en) |
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US7109443B2 (en) * | 2004-03-26 | 2006-09-19 | Intel Corporation | Multi-zone reflecting device for use in flash lamp processes |
US7283734B2 (en) * | 2004-08-24 | 2007-10-16 | Fujitsu Limited | Rapid thermal processing apparatus and method of manufacture of semiconductor device |
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Also Published As
Publication number | Publication date |
---|---|
US20100018960A1 (en) | 2010-01-28 |
US6717158B1 (en) | 2004-04-06 |
KR100729006B1 (en) | 2007-06-14 |
US20020017618A1 (en) | 2002-02-14 |
US20060201927A1 (en) | 2006-09-14 |
WO2000041223A1 (en) | 2000-07-13 |
US7608802B2 (en) | 2009-10-27 |
US6771895B2 (en) | 2004-08-03 |
US8138451B2 (en) | 2012-03-20 |
EP1141999A1 (en) | 2001-10-10 |
US20050008351A1 (en) | 2005-01-13 |
TW504728B (en) | 2002-10-01 |
JP2002534803A (en) | 2002-10-15 |
AU2224600A (en) | 2000-07-24 |
KR20010089787A (en) | 2001-10-08 |
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