US7605028B2 - Method of forming a memory device having a storage transistor - Google Patents
Method of forming a memory device having a storage transistor Download PDFInfo
- Publication number
- US7605028B2 US7605028B2 US11/042,207 US4220705A US7605028B2 US 7605028 B2 US7605028 B2 US 7605028B2 US 4220705 A US4220705 A US 4220705A US 7605028 B2 US7605028 B2 US 7605028B2
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- forming
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000003860 storage Methods 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims description 39
- 229910021332 silicide Inorganic materials 0.000 claims description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910020751 SixGe1-x Inorganic materials 0.000 claims description 9
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 9
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910021133 SiyGe1-y Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- YYDMGQIOLRVJCF-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].O.O.[La+3].[Ta+5] Chemical compound [O-2].[O-2].[O-2].[O-2].O.O.[La+3].[Ta+5] YYDMGQIOLRVJCF-UHFFFAOYSA-N 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 206010010144 Completed suicide Diseases 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000005641 tunneling Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 125000005843 halogen group Chemical group 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 239000000969 carrier Substances 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000007667 floating Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- -1 e.g. Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000003031 high energy carrier Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
Abstract
Description
Claims (39)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/042,207 US7605028B2 (en) | 2003-10-08 | 2005-01-26 | Method of forming a memory device having a storage transistor |
US12/566,482 US8247871B2 (en) | 2003-10-08 | 2009-09-24 | 1T/0C RAM cell with a wrapped-around gate device structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/680,158 US20050077574A1 (en) | 2003-10-08 | 2003-10-08 | 1T/0C RAM cell with a wrapped-around gate device structure |
US11/042,207 US7605028B2 (en) | 2003-10-08 | 2005-01-26 | Method of forming a memory device having a storage transistor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/680,158 Division US20050077574A1 (en) | 2003-10-08 | 2003-10-08 | 1T/0C RAM cell with a wrapped-around gate device structure |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/566,482 Continuation US8247871B2 (en) | 2003-10-08 | 2009-09-24 | 1T/0C RAM cell with a wrapped-around gate device structure |
Publications (2)
Publication Number | Publication Date |
---|---|
US20050128787A1 US20050128787A1 (en) | 2005-06-16 |
US7605028B2 true US7605028B2 (en) | 2009-10-20 |
Family
ID=34422168
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/680,158 Abandoned US20050077574A1 (en) | 2003-10-08 | 2003-10-08 | 1T/0C RAM cell with a wrapped-around gate device structure |
US11/042,207 Active 2025-02-26 US7605028B2 (en) | 2003-10-08 | 2005-01-26 | Method of forming a memory device having a storage transistor |
US12/566,482 Active 2024-05-04 US8247871B2 (en) | 2003-10-08 | 2009-09-24 | 1T/0C RAM cell with a wrapped-around gate device structure |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/680,158 Abandoned US20050077574A1 (en) | 2003-10-08 | 2003-10-08 | 1T/0C RAM cell with a wrapped-around gate device structure |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/566,482 Active 2024-05-04 US8247871B2 (en) | 2003-10-08 | 2009-09-24 | 1T/0C RAM cell with a wrapped-around gate device structure |
Country Status (1)
Country | Link |
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US (3) | US20050077574A1 (en) |
Cited By (5)
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US20090321836A1 (en) * | 2008-06-30 | 2009-12-31 | Andy Wei | Double gate and tri-gate transistor formed on a bulk substrate and method for forming the transistor |
US20100013013A1 (en) * | 2003-10-08 | 2010-01-21 | Chandra Mouli | 1t/0c ram cell with a wrapped-around gate device structure |
US20100025766A1 (en) * | 2006-12-15 | 2010-02-04 | Nxp, B.V. | Transistor device and method of manufacturing such a transistor device |
US8772149B2 (en) | 2011-10-19 | 2014-07-08 | International Business Machines Corporation | FinFET structure and method to adjust threshold voltage in a FinFET structure |
US9825094B2 (en) * | 2015-08-21 | 2017-11-21 | Globalfoundries Inc. | FinFET PCM access transistor having gate-wrapped source and drain regions |
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US6503783B1 (en) * | 2000-08-31 | 2003-01-07 | Micron Technology, Inc. | SOI CMOS device with reduced DIBL |
JP2003282879A (en) * | 2002-03-22 | 2003-10-03 | Sony Corp | Method for fabricating semiconductor device |
DE10220923B4 (en) * | 2002-05-10 | 2006-10-26 | Infineon Technologies Ag | Method for producing a non-volatile flash semiconductor memory |
KR100843244B1 (en) * | 2007-04-19 | 2008-07-02 | 삼성전자주식회사 | Semiconductor device and method of fabricating the same |
US20050062088A1 (en) * | 2003-09-22 | 2005-03-24 | Texas Instruments Incorporated | Multi-gate one-transistor dynamic random access memory |
US6924561B1 (en) | 2003-12-08 | 2005-08-02 | Advanced Micro Devices, Inc. | SRAM formation using shadow implantation |
US6872640B1 (en) * | 2004-03-16 | 2005-03-29 | Micron Technology, Inc. | SOI CMOS device with reduced DIBL |
US7598134B2 (en) * | 2004-07-28 | 2009-10-06 | Micron Technology, Inc. | Memory device forming methods |
US7009250B1 (en) * | 2004-08-20 | 2006-03-07 | Micron Technology, Inc. | FinFET device with reduced DIBL |
US7508648B2 (en) * | 2005-02-08 | 2009-03-24 | Micron Technology, Inc. | Atomic layer deposition of Dy doped HfO2 films as gate dielectrics |
JP2007018588A (en) * | 2005-07-06 | 2007-01-25 | Toshiba Corp | Semiconductor storage device and method of driving the semiconductor storage device |
KR100680972B1 (en) | 2005-10-06 | 2007-02-09 | 주식회사 하이닉스반도체 | Transistor and method for forming thereof |
US7250666B2 (en) | 2005-11-15 | 2007-07-31 | International Business Machines Corporation | Schottky barrier diode and method of forming a Schottky barrier diode |
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US7608898B2 (en) * | 2006-10-31 | 2009-10-27 | Freescale Semiconductor, Inc. | One transistor DRAM cell structure |
US7851859B2 (en) * | 2006-11-01 | 2010-12-14 | Samsung Electronics Co., Ltd. | Single transistor memory device having source and drain insulating regions and method of fabricating the same |
US8377812B2 (en) * | 2006-11-06 | 2013-02-19 | General Electric Company | SiC MOSFETs and self-aligned fabrication methods thereof |
US20080108190A1 (en) * | 2006-11-06 | 2008-05-08 | General Electric Company | SiC MOSFETs and self-aligned fabrication methods thereof |
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US8067803B2 (en) | 2008-10-16 | 2011-11-29 | Micron Technology, Inc. | Memory devices, transistor devices and related methods |
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US9922878B2 (en) | 2010-01-08 | 2018-03-20 | Semiconductor Manufacturing International (Shanghai) Corporation | Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturing |
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US20100013013A1 (en) * | 2003-10-08 | 2010-01-21 | Chandra Mouli | 1t/0c ram cell with a wrapped-around gate device structure |
US8247871B2 (en) * | 2003-10-08 | 2012-08-21 | Micron Technology, Inc. | 1T/0C RAM cell with a wrapped-around gate device structure |
US20100025766A1 (en) * | 2006-12-15 | 2010-02-04 | Nxp, B.V. | Transistor device and method of manufacturing such a transistor device |
US8362561B2 (en) * | 2006-12-15 | 2013-01-29 | Nxp B.V. | Transistor device and method of manufacturing such a transistor device |
US20090321836A1 (en) * | 2008-06-30 | 2009-12-31 | Andy Wei | Double gate and tri-gate transistor formed on a bulk substrate and method for forming the transistor |
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US8772149B2 (en) | 2011-10-19 | 2014-07-08 | International Business Machines Corporation | FinFET structure and method to adjust threshold voltage in a FinFET structure |
US8932949B2 (en) | 2011-10-19 | 2015-01-13 | International Business Machines Corporation | FinFET structure and method to adjust threshold voltage in a FinFET structure |
US9171954B2 (en) | 2011-10-19 | 2015-10-27 | Globalfoundries U.S. 2 Llc | FinFET structure and method to adjust threshold voltage in a FinFET structure |
US9825094B2 (en) * | 2015-08-21 | 2017-11-21 | Globalfoundries Inc. | FinFET PCM access transistor having gate-wrapped source and drain regions |
US9825093B2 (en) | 2015-08-21 | 2017-11-21 | Globalfoundries Inc. | FinFET PCM access transistor having gate-wrapped source and drain regions |
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US8247871B2 (en) | 2012-08-21 |
US20100013013A1 (en) | 2010-01-21 |
US20050077574A1 (en) | 2005-04-14 |
US20050128787A1 (en) | 2005-06-16 |
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