US7906393B2 - Methods for forming small-scale capacitor structures - Google Patents
Methods for forming small-scale capacitor structures Download PDFInfo
- Publication number
- US7906393B2 US7906393B2 US10/767,298 US76729804A US7906393B2 US 7906393 B2 US7906393 B2 US 7906393B2 US 76729804 A US76729804 A US 76729804A US 7906393 B2 US7906393 B2 US 7906393B2
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- electrically conductive
- conductive layer
- gaseous precursor
- layer
- precursor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Abstract
Description
Claims (44)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/767,298 US7906393B2 (en) | 2004-01-28 | 2004-01-28 | Methods for forming small-scale capacitor structures |
US13/047,430 US8384192B2 (en) | 2004-01-28 | 2011-03-14 | Methods for forming small-scale capacitor structures |
US13/775,878 US20130166057A1 (en) | 2004-01-28 | 2013-02-25 | Methods for forming small-scale capacitor structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/767,298 US7906393B2 (en) | 2004-01-28 | 2004-01-28 | Methods for forming small-scale capacitor structures |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/047,430 Division US8384192B2 (en) | 2004-01-28 | 2011-03-14 | Methods for forming small-scale capacitor structures |
Publications (2)
Publication Number | Publication Date |
---|---|
US20050164466A1 US20050164466A1 (en) | 2005-07-28 |
US7906393B2 true US7906393B2 (en) | 2011-03-15 |
Family
ID=34795774
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/767,298 Active - Reinstated 2028-08-08 US7906393B2 (en) | 2004-01-28 | 2004-01-28 | Methods for forming small-scale capacitor structures |
US13/047,430 Expired - Lifetime US8384192B2 (en) | 2004-01-28 | 2011-03-14 | Methods for forming small-scale capacitor structures |
US13/775,878 Abandoned US20130166057A1 (en) | 2004-01-28 | 2013-02-25 | Methods for forming small-scale capacitor structures |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/047,430 Expired - Lifetime US8384192B2 (en) | 2004-01-28 | 2011-03-14 | Methods for forming small-scale capacitor structures |
US13/775,878 Abandoned US20130166057A1 (en) | 2004-01-28 | 2013-02-25 | Methods for forming small-scale capacitor structures |
Country Status (1)
Country | Link |
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US (3) | US7906393B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090127669A1 (en) * | 2007-09-18 | 2009-05-21 | Nec Corporation | Method for forming interlayer dielectric film, interlayer dielectric film, semiconductor device and semiconductor manufacturing apparatus |
US20090236447A1 (en) * | 2008-03-21 | 2009-09-24 | Applied Materials, Inc. | Method and apparatus for controlling gas injection in process chamber |
US20120193632A1 (en) * | 2011-01-28 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Silicon structure and manufacturing methods thereof and of capacitor including silicon structure |
US9023436B2 (en) | 2004-05-06 | 2015-05-05 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US10526700B2 (en) * | 2014-12-19 | 2020-01-07 | Lam Research Corporation | Hardware and process for film uniformity improvement |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7422635B2 (en) * | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US7064066B1 (en) * | 2004-12-07 | 2006-06-20 | Intel Corporation | Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode |
US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
US8795771B2 (en) | 2006-10-27 | 2014-08-05 | Sean T. Barry | ALD of metal-containing films using cyclopentadienyl compounds |
TW200951241A (en) * | 2008-05-30 | 2009-12-16 | Sigma Aldrich Co | Methods of forming ruthenium-containing films by atomic layer deposition |
JP5774822B2 (en) * | 2009-05-25 | 2015-09-09 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
JP5610438B2 (en) * | 2010-01-29 | 2014-10-22 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
RU2432634C1 (en) * | 2010-07-14 | 2011-10-27 | Общество с ограниченной ответственностью "БАРГАН ТЕХНОЛОДЖИ" (ООО "БТЕХ") | Multilayer nanocomposite for capacitors and method of its manufacturing |
US20120105385A1 (en) * | 2010-11-02 | 2012-05-03 | Qualcomm Mems Technologies, Inc. | Electromechanical systems apparatuses and methods for providing rough surfaces |
US9512519B2 (en) * | 2012-12-03 | 2016-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Atomic layer deposition apparatus and method |
US11688601B2 (en) * | 2020-11-30 | 2023-06-27 | International Business Machines Corporation | Obtaining a clean nitride surface by annealing |
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