US8492290B2 - Fabrication of silicon oxide and oxynitride having sub-nanometer thickness - Google Patents
Fabrication of silicon oxide and oxynitride having sub-nanometer thickness Download PDFInfo
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- US8492290B2 US8492290B2 US13/164,891 US201113164891A US8492290B2 US 8492290 B2 US8492290 B2 US 8492290B2 US 201113164891 A US201113164891 A US 201113164891A US 8492290 B2 US8492290 B2 US 8492290B2
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- oxygen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28238—Making the insulator with sacrificial oxide
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/164,891 US8492290B2 (en) | 2011-06-21 | 2011-06-21 | Fabrication of silicon oxide and oxynitride having sub-nanometer thickness |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/164,891 US8492290B2 (en) | 2011-06-21 | 2011-06-21 | Fabrication of silicon oxide and oxynitride having sub-nanometer thickness |
Publications (2)
Publication Number | Publication Date |
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US20120329230A1 US20120329230A1 (en) | 2012-12-27 |
US8492290B2 true US8492290B2 (en) | 2013-07-23 |
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US13/164,891 Active 2032-01-23 US8492290B2 (en) | 2011-06-21 | 2011-06-21 | Fabrication of silicon oxide and oxynitride having sub-nanometer thickness |
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US (1) | US8492290B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779155A (en) * | 2014-01-14 | 2015-07-15 | 北大方正集团有限公司 | Treatment method of silicon-aluminum growth interface, and silicon wafer used for aluminum growth |
TWI673767B (en) * | 2015-02-09 | 2019-10-01 | 美商應用材料股份有限公司 | Selectively lateral growth of silicon oxide thin film |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9224826B2 (en) | 2014-02-12 | 2015-12-29 | International Business Machines Corporation | Multiple thickness gate dielectrics for replacement gate field effect transistors |
US9384964B1 (en) * | 2014-08-01 | 2016-07-05 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device |
Citations (17)
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---|---|---|---|---|
US3508209A (en) * | 1966-03-31 | 1970-04-21 | Ibm | Monolithic integrated memory array structure including fabrication and package therefor |
US4784975A (en) * | 1986-10-23 | 1988-11-15 | International Business Machines Corporation | Post-oxidation anneal of silicon dioxide |
US5068124A (en) | 1989-11-17 | 1991-11-26 | International Business Machines Corporation | Method for depositing high quality silicon dioxide by pecvd |
US5264394A (en) * | 1991-05-22 | 1993-11-23 | Associated Universities, Inc. | Method for producing high quality oxide films on substrates |
US5940736A (en) | 1997-03-11 | 1999-08-17 | Lucent Technologies Inc. | Method for forming a high quality ultrathin gate oxide layer |
US6029680A (en) * | 1995-11-08 | 2000-02-29 | Micron Technology, Inc | Method for in situ removal of particulate residues resulting from cleaning treatments |
US6100149A (en) * | 1997-07-01 | 2000-08-08 | Steag Rtp Systems | Method for rapid thermal processing (RTP) of silicon substrates |
US6436846B1 (en) * | 1998-09-03 | 2002-08-20 | Siemens Aktiengesellscharft | Combined preanneal/oxidation step using rapid thermal processing |
US6551946B1 (en) * | 1999-06-24 | 2003-04-22 | Agere Systems Inc. | Two-step oxidation process for oxidizing a silicon substrate wherein the first step is carried out at a temperature below the viscoelastic temperature of silicon dioxide and the second step is carried out at a temperature above the viscoelastic temperature |
US6638819B1 (en) * | 2000-11-17 | 2003-10-28 | Newport Fab, Llc | Method for fabricating interfacial oxide in a transistor and related structure |
US6764967B2 (en) * | 2002-10-05 | 2004-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming low thermal budget sacrificial oxides |
US20050070101A1 (en) * | 2003-09-30 | 2005-03-31 | International Business Machines Corporation | Silicon dioxide removing method |
US20060134927A1 (en) * | 2004-12-21 | 2006-06-22 | Industrial Technology Research Institute | Method for forming ultra thin oxide layer by ozonated water |
US20060138398A1 (en) * | 2004-12-28 | 2006-06-29 | Fujitsu Limited | Semiconductor device and fabrication method thereof |
US7101812B2 (en) * | 2002-09-20 | 2006-09-05 | Mattson Technology, Inc. | Method of forming and/or modifying a dielectric film on a semiconductor surface |
US20090117750A1 (en) * | 2007-10-30 | 2009-05-07 | Interuniversitair Microelektronica Centrum (Imec) | Methods of Forming a Semiconductor Device |
US7560363B2 (en) * | 2004-07-20 | 2009-07-14 | Sumco Corporation | Manufacturing method for SIMOX substrate |
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2011
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US4784975A (en) * | 1986-10-23 | 1988-11-15 | International Business Machines Corporation | Post-oxidation anneal of silicon dioxide |
US5068124A (en) | 1989-11-17 | 1991-11-26 | International Business Machines Corporation | Method for depositing high quality silicon dioxide by pecvd |
US5264394A (en) * | 1991-05-22 | 1993-11-23 | Associated Universities, Inc. | Method for producing high quality oxide films on substrates |
US6029680A (en) * | 1995-11-08 | 2000-02-29 | Micron Technology, Inc | Method for in situ removal of particulate residues resulting from cleaning treatments |
US5940736A (en) | 1997-03-11 | 1999-08-17 | Lucent Technologies Inc. | Method for forming a high quality ultrathin gate oxide layer |
US6100149A (en) * | 1997-07-01 | 2000-08-08 | Steag Rtp Systems | Method for rapid thermal processing (RTP) of silicon substrates |
US6436846B1 (en) * | 1998-09-03 | 2002-08-20 | Siemens Aktiengesellscharft | Combined preanneal/oxidation step using rapid thermal processing |
US6551946B1 (en) * | 1999-06-24 | 2003-04-22 | Agere Systems Inc. | Two-step oxidation process for oxidizing a silicon substrate wherein the first step is carried out at a temperature below the viscoelastic temperature of silicon dioxide and the second step is carried out at a temperature above the viscoelastic temperature |
US6638819B1 (en) * | 2000-11-17 | 2003-10-28 | Newport Fab, Llc | Method for fabricating interfacial oxide in a transistor and related structure |
US7101812B2 (en) * | 2002-09-20 | 2006-09-05 | Mattson Technology, Inc. | Method of forming and/or modifying a dielectric film on a semiconductor surface |
US6764967B2 (en) * | 2002-10-05 | 2004-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming low thermal budget sacrificial oxides |
US20050070101A1 (en) * | 2003-09-30 | 2005-03-31 | International Business Machines Corporation | Silicon dioxide removing method |
US7560363B2 (en) * | 2004-07-20 | 2009-07-14 | Sumco Corporation | Manufacturing method for SIMOX substrate |
US20060134927A1 (en) * | 2004-12-21 | 2006-06-22 | Industrial Technology Research Institute | Method for forming ultra thin oxide layer by ozonated water |
US20060138398A1 (en) * | 2004-12-28 | 2006-06-29 | Fujitsu Limited | Semiconductor device and fabrication method thereof |
US20090117750A1 (en) * | 2007-10-30 | 2009-05-07 | Interuniversitair Microelektronica Centrum (Imec) | Methods of Forming a Semiconductor Device |
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Virginia Semiconductor, Inc., "Wet-Chemical Etching and Cleaning of Silicon" Jan. 2003. |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779155A (en) * | 2014-01-14 | 2015-07-15 | 北大方正集团有限公司 | Treatment method of silicon-aluminum growth interface, and silicon wafer used for aluminum growth |
CN104779155B (en) * | 2014-01-14 | 2018-01-02 | 北大方正集团有限公司 | A kind of processing method of sial growth interface and a kind of silicon chip for being used to grow aluminium |
TWI673767B (en) * | 2015-02-09 | 2019-10-01 | 美商應用材料股份有限公司 | Selectively lateral growth of silicon oxide thin film |
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US20120329230A1 (en) | 2012-12-27 |
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