US9109287B2 - Solid source container with inlet plenum - Google Patents
Solid source container with inlet plenum Download PDFInfo
- Publication number
- US9109287B2 US9109287B2 US11/867,171 US86717107A US9109287B2 US 9109287 B2 US9109287 B2 US 9109287B2 US 86717107 A US86717107 A US 86717107A US 9109287 B2 US9109287 B2 US 9109287B2
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- US
- United States
- Prior art keywords
- vessel
- separator
- lid
- volume
- inlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007787 solid Substances 0.000 title description 20
- 239000002243 precursor Substances 0.000 claims abstract description 123
- 239000012530 fluid Substances 0.000 claims abstract description 64
- 239000012159 carrier gas Substances 0.000 claims abstract description 40
- 238000004891 communication Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000007792 gaseous phase Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000000859 sublimation Methods 0.000 description 5
- 230000008022 sublimation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000013618 particulate matter Substances 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- YQTCQNIPQMJNTI-UHFFFAOYSA-N 2,2-dimethylpropan-1-one Chemical group CC(C)(C)[C]=O YQTCQNIPQMJNTI-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- -1 sodium tetrafluoroborates Chemical class 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- BGGIUGXMWNKMCP-UHFFFAOYSA-N 2-methylpropan-2-olate;zirconium(4+) Chemical compound CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BGGIUGXMWNKMCP-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- VBCSQFQVDXIOJL-UHFFFAOYSA-N diethylazanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VBCSQFQVDXIOJL-UHFFFAOYSA-N 0.000 description 1
- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 description 1
- BRUWTWNPPWXZIL-UHFFFAOYSA-N ethyl(methyl)azanide;tantalum(5+) Chemical compound [Ta+5].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C BRUWTWNPPWXZIL-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
Definitions
- Deposition processes such as, for example, chemical vapor deposition and atomic layer deposition processes, are used in one or more steps during the manufacture of a semiconductor device to form one or more films or coatings on the surface of a substrate.
- a precursor source that may be in a solid and/or liquid phase is conveyed to a reaction chamber having one of more substrates contained therein where the precursor reacts under certain conditions such as temperature or pressure to form the coating or film on the substrate surface.
- the present invention is a vessel for conveying a precursor-containing fluid stream from a precursor material contained within the vessel, the vessel comprising: an interior volume wherein the interior volume is segmented into an upper volume and a lower volume, wherein the upper volume and the lower volume are in fluid communication and the lower volume contains the precursor material; a lid comprising a fluid inlet which directs at least one carrier gas into the interior volume of the vessel, a fluid outlet, and an internal recess wherein at least a portion of the upper volume resides within the internal recess; a sidewall having an upper lip wherein at least a portion of the upper lip contacts the lid; a separator interposed between the lid and the sidewall wherein the separator resides adjacent the upper lip and segments the interior volume into the upper volume and a lower volume; and an inlet plenum in fluid communication with the fluid inlet having a plenum chamber opening towards the separator to direct the at least one carrier gas through the separator and towards the precursor material.
- FIG. 1 is an exploded side view of one embodiment of the vessel disclosed herein.
- FIG. 2 provides an assembled side view of the vessel of FIG. 1 illustrating the interior volume.
- FIG. 3 is an isometric view of an integrated sidewall and base assembly of another embodiment of the vessel disclosed herein.
- FIG. 4 is a top view of the integrated sidewall and base assembly of FIG. 2 .
- FIG. 5 is an isometric view of a removable base of one embodiment of the present invention that contains a plurality of protrusions.
- FIG. 6 is an exploded isometric view of one embodiment of the vessel disclosed herein that contains heater cartridges that are inserted into the vessel.
- FIG. 7 a is an exploded, isometric view of the lid of the vessel in FIG. 7 .
- FIG. 7 b is an assembled, isometric view of the lid of the vessel in FIG. 7 .
- FIG. 7 d is a mixed elevation cross-sectional view of the lid of the vessel in FIG. 7 .
- FIG. 7 e is an exploded, isometric view of the body of the vessel in FIG. 7 .
- FIG. 7 f is an exploded, isometric view that shows the relationship between the separator and the body of the vessel in FIG. 7 .
- FIG. 7 g is a top view illustrating a separator that is interposed between the body of the vessel in FIG. 7 and the lid (not shown).
- FIG. 8 is a graph illustrating the relative delivery rate vs. % charge remaining for a vessel described herein and a prior art vessel using a fill of 80 grams of precursor and a temperature of 160° C.
- FIG. 9 is a graph illustrating the relative delivery rate vs. % charge remaining for a vessel described herein and a prior art vessel using a fill of 80 grams of precursor and a temperature of 180° C.
- FIG. 10 is a graph illustrating the relative delivery rate vs. % vessel life for a vessel described herein using a fill of 500 grams of precursor.
- FIG. 11 is a cross-section of a specific embodiment of the lid, inlet and outlet of the present invention showing the inlet in radially connected to the inlet plenum.
- FIG. 12 is a plan view taken along line 12 - 12 of FIG. 11 of the specific embodiment of the lid, inlet and outlet of the present invention.
- a vessel for the vaporization of a precursor material, particularly a solid precursor, and a method comprising same are disclosed herein.
- the vessel is typically constructed of a vessel having a base, lid, and sidewall that define an interior volume to contain the precursor material.
- the precursor material may transform from a solid and/or liquid phase to its gaseous phase.
- the precursor material may be a solid and/or a liquid.
- the base, the sidewall, and/or the interior surface of the lid of the vessel have at least one protrusion, which extends into the interior volume and contacts the precursor material.
- the at least one protrusion may aid in transferring the heat directly into the precursor material.
- an inert carrier gas such as, for example, nitrogen, hydrogen, helium, argon, or other gas, is flowed through the interior volume and combines with the gaseous phase of the precursor material to provide a precursor-containing gaseous stream.
- a vacuum may be used, alone or in conjunction with the inert gas, to withdraw the precursor-containing gaseous stream from the vessel.
- the precursor-containing gaseous stream may be then delivered to downstream production equipment, such as, for example, a reaction chamber for deposition.
- the vessel may provide for a continuous flow of precursor-containing gaseous stream while avoiding “cold spots” or other problems attributable to the condensation of vapors contained therein.
- the vessel may also provide a consistent and reproducible flow rate, which may be advantageous for a variety of manufacturing processes.
- FIGS. 1 and 2 provide an exploded side view and cross-sectional view, respectively, of one embodiment of the vessel of the present invention wherein the at least one protrusion extends from the base of the vessel.
- the vessel is a vessel 10 having a lid 12 , a base 14 , sidewalls 16 , and a pair of seals 13 and 15 located near lid 12 and base 14 , respectively. While vessel 10 is shown as being substantially cylindrical in shape, it is understood that vessel may be shaped, for example, as a hollow square or rectangular tube.
- Seals 13 and 15 which may be a seal, o-ring, gasket, insert or the like may be used to allow vessel 10 to maintain a vacuum or sustained pressure and may be constructed of a metal or a polymeric material.
- lid 12 and/or base 14 may be aligned onto sidewall 16 to form an airtight or pressure-tight seal without the need for one or both of seals 13 and 15 .
- Lid 12 may be fastened onto the sidewall 16 through the one or more fasteners 19 such as a screw or pin as shown in FIG. 1 .
- lid 12 may be fastened onto sidewall 16 through grooves that correspond to complementary recesses that align and allow lid 12 to be fastened onto sidewall 16 (not shown).
- lid 12 may be fastened onto sidewall 16 through welding, bonding, adhesives, or other means.
- Alignment pins (not shown) may be used to ensure proper alignment and fit between the lid and the sidewall and/or the sidewall and base for embodiments where the base is removable.
- Lid 12 , base 14 , and sidewalls 16 define an interior volume 17 to contain the precursor material.
- Lid 12 , base 14 , and side walls 16 may be constructed of a metal or other material that can withstand the operating temperatures of vessel 10 .
- at least a portion of lid 12 , base 14 , and side walls 16 may be chemically non-reactive to the precursor material contained therein.
- at least a portion of lid 12 , base 14 , and side walls 16 may be thermally conductive.
- Exemplary metals for lid 12 , base 14 , and side walls 16 include stainless steel, titanium, chrome, zirconium, monel, impervious graphite, molybdenum, cobalt, anodized aluminum, aluminum alloys, silver, silver alloys, copper, copper alloys, lead, nickel clad steel, graphite, a ceramic material, doped or undoped, or combinations thereof.
- at least a portion of the surface that contacts the precursor may be plated with various metals such as titanium, chrome, silver, tantalum, gold, platinum, titanium and other materials wherein the aforementioned plating materials can be doped or undoped to increase surface compatibility.
- the plating material may be non-reactive to the precursor material contained therein.
- Lid 12 may contain a fluid inlet 22 for the flow of an inert carrier gas or mixture thereof and a fluid outlet 24 for the flow of the precursor-containing fluid stream.
- exemplary inert carrier gases that may be introduced into vessel 10 through inlet 22 include, but not limited to, hydrogen, helium, neon, nitrogen, argon, xenon, krypton, or mixtures thereof.
- the precursor-containing fluid stream is withdrawn from vessel 10 without the aid of a carrier gas but rather a vacuum, pressure differential, or other means.
- inlet 22 and any valves or structures associated therewith may be optional.
- Lid 12 is also depicted having a fill port 26 for introducing the precursor material (not shown) into interior volume 17 .
- precursor material can be introduced into interior volume 17 through inlet 22 , base 14 (particularly in those embodiments where base 14 is removable) or other means besides fill port 26 .
- inlet 22 and outlet 24 may include valves 23 and 25 that act to control the flow of fluid into and out of vessel 10 .
- Valves 23 and 25 may be manual, automatic such as pneumatic, or the like and preferably are capable of operating at the operating temperatures of the vessel.
- valves 23 and 25 may be fitted with disconnect fittings to faciliate removal of vessel 10 from the process line. Brackets (not shown) to minimize the bending of the inlet 22 and outlet 24 tubing may support valves 23 and 25 .
- the inlet and outlet tubing may be connected with a standard gas tight fitting, such as a VCRTM fitting manufactured by the Swagelok Company of Cleveland, Ohio, that is used to connect two separate pieces of piping.
- the outlet 24 may have one or more filters 30 and 32 that are placed in-line on the outlet tubing to remove any impurities or particulate matter from the precursor-containing fluid stream.
- Filters 30 and 32 may be comprised of a porous material (not shown) that is chemically unreactive to the precursor-containing fluid stream and or sufficient particle size to capture any impurities or particulate matter in the precursor-containing fluid stream as it passes therethrough.
- inlet 22 may further have a vortex-generating inlet 28 that directs the flow of the inert gas downward into the interior volume 17 and along the internal surface of sidewall 16 .
- vortex generating inlet is depicted in FIGS. 1 and 2 as a tube that extends tangentially into interior volume 17 and resembles a “L”, it is envisioned that other configurations such as, for example, a fin extending from side wall 16 , a “J” shaped tube, or a “T” shaped tube may also direct the laminar flow of the inert carrier gas.
- the “T” shaped tube may be angled on one or both ends and/or may be oversized.
- outlet 24 may also have a tube that extends into interior volume 17 that has a “T” shaped tube or other configuration.
- the “T” shaped tube on outlet 24 may be used in addition to, or in lieu of, the “T” shaped tube on the fluid inlet.
- vessel 10 further comprises a thermally conductive jacket 18 that surrounds at least a portion of vessel 10 and is retained by fastners fitted in recesses 20 , such as bolt and nut combinations to provide a snug fit.
- Thermally conductive jacket may allow for the uniform distribution of heat and improve the conduction of heat into the precursor material contained within the interior volume 17 of vessel 10 .
- Thermally conductive jacket may be secured around vessel 10 via fasteners and/or a different material that allows for the expansion of the jacket upon heating.
- thermally conductive jacket 18 may be comprised of aluminum whereas the sidewall 16 of vessel 10 may be comprised of stainless steel 16 .
- Thermally conductive jacket 18 may be secured around sidewall 16 using springs to account for thermal expansion upon heating the vessel and precursor material contained therein.
- Vessel 10 and the precursor material contained therein may be heated to the temperature at which the material is in its gaseous phase, or sublimation temperature when the precursor is a solid material, through a variety of means that include, but are not limited to, strip heaters, radiant heaters, circulating fluid heaters, resistant heating systems, inductive heating systems, or other means that can be used alone or in combination.
- These heating sources may be external and/or internal in relation to vessel 10 .
- the entire vessel 10 may be introduced into an oven.
- base 14 may have one or more heating elements of cartridges contained therein.
- FIG. 6 illustrates an embodiment wherein the heating cartridges 36 are inserted into the interior volume 17 of vessel 10 in various places.
- Still other embodiments may employ one or more inductive heating coils operated by an RF power supply.
- Yet other embodiments may employ a heater that is in fluid communication with the carrier gas supply that heats the carrier gas to a certain temperature prior to introduction into vessel 10 .
- Vessel 10 may further have one or more thermocouples, thermistors, or other temperature sensitive devices that can monitor that temperature of vessel 10 and the precursor material contained therein.
- the one or more thermocouples may be located in the base, lid, interior volume and/or other areas of the vessel.
- the one or more thermocouples or other temperature sensitive devices may be connected to a controller or computer that is in electrical communication with the heating source to maintain a uniform temperature within the interior volume of the vessel and the chemical contained therein.
- FIGS. 1 , 2 , and 5 provide an illustration of an embodiment wherein a plurality of “spike-shaped” protrusions 34 is employed.
- Protrusions 34 may be comprised of a thermally conductive material or a composite thereof.
- protrusions 34 may be comprised of a thermally conductive core such as copper 34 a and a non-reactive surface such as stainless steel 34 b that contacts the precursor material.
- base 14 may be removable from sidewall 16 to allow for ease of cleaning and servicing.
- protrusions 34 extend from base 14 in the Figures, it is envisioned that protrusions 34 may also extend into interior volume 17 from the sidewall 16 , lid 12 , base 14 , or combinations thereof. Protrusions 34 contact the precursor material contained therein to improve heat transfer. Protrusions 34 are arranged to allow for the unimpeded flow of gas between and amongst the protrusions and the precursor material contained therein. Further, protrusions 34 may also keep the precursor material from agglomerating.
- FIGS. 3 and 4 depict a “clover-leaf” configured protrusion 34 ′ that extends from base 14 ′.
- Base 14 ′ and sidewall 16 ′ are depicted as an integrated assembly; however, base 14 may be removable.
- the cloverleaf configured protrusion 34 ′ may divide interior volume 17 ′ into separate, but interconnected, areas that allow the unimpeded flow of carrier gas within the volume.
- FIG. 7 and FIGS. 7 a through 7 g provide an example of an embodiment of the vessel 100 disclosed herein where the at least one protrusion 101 are “fin-shaped” and extend from the sidewall 104 (which is an integrated sidewall and base assembly) of vessel 100 into interior volume 113 .
- fin-shaped protrusions 101 are substantially perpendicular to fluid inlet assembly and fluid outlet assembly 110 and 112 .
- vessel 100 consists of a lid 102 , sidewall 104 , an inner lip 106 , a fluid inlet assembly 110 that allows for the flow of an inert carrier gas or mixture thereof, a fluid outlet assembly 112 that allows for the flow of the precursor-containing fluid stream, and a fill port 108 for introducing the precursor material into interior volume 113 of vessel 100 .
- fill port 108 may used as a level sensing port.
- the port may contain, for example, a window, sensor, probe, and/or other means to detect the presence of precursor within the vessel.
- FIGS. 7 a through 7 c provide various detailed views of lid 102 of vessel 100 .
- vessel 100 has a “T” shaped tube 114 that aids in the flow of incoming carrier gas through 110 assembly into the interior volume 113 of vessel 100 .
- “T” shaped tube 114 may reduce the laminar flow of the incoming carrier gas thereby minimizing the possibility of carrying unsublimated precursor in the outgoing precursor-containing fluid stream.
- Lid 102 may further employ one or more alignment pins 111 to aid in the proper fitting and alignment of lid 102 to sidewall 116 .
- FIG. 7 b provides a detailed side view of assembled lid 102 , which illustrates the inner recess 116 of lid 102 which may aid in directing the flow of the incoming carrier gas.
- inner recess 116 contains at least a portion of upper volume 117 and may direct the flow of the incoming carrier gas away from the unsublimated precursor.
- optional separator 118 may be added to the vessel to further prevent unsublimated precursor from mixing with the outgoing precursor-containing fluid stream.
- FIGS. 7 e through 7 g provide an illustration of separator 118 that acts to partition the interior volume 113 of the vessel into upper volume 117 and a lower volume 119 between the lower body of the container and the lid. Separator 118 separates lid 102 (which are shown without inlet and outlet assemblies 110 and 112 and fill port 108 ) and base 104 .
- vessel 10 and 100 may further include an optional stainless steel frit 120 , which may prevent unsublimated precursor from entering the outgoing precursor-containing fluid stream.
- the optional stainless steel frit may have a pore size that ranges from 0.1 to 100 microns.
- the optional frit can be installed anywhere within interior volume 113 and/or the fluid path of the outgoing precursor-containing fluid. In one particular embodiment such as that shown in FIG. 7 f , one or more frits may be installed in an inner recess 122 on separator 118 .
- vessel 10 and 100 may further comprise a window (not shown in the figures) that is positioned to determine the contents within the interior volume 17 .
- Suitable materials include transparent materials that have a sufficient thermal conductivity to minimize condensation and deposition of vapors on the window including, for example, diamond, sapphire, silicon carbide, transparent ceramic materials, and the like.
- Operating temperatures of the vessel may vary depending upon the precursor material contained therein but may generally range from about 25° C. to about 500° C., or from about 100° C. to about 300° C. Operating pressure of the vessel may range from about 10 ⁇ 2 torr to about 1,000 torr, or from about 0.1 torr to about 200 torr.
- the method of using the vessel disclosed herein includes introducing a precursor material through fill port 26 , such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a portion of the at least one protrusion and does not extend beyond the area of the interior volume 17 containing the at least one protrusion. Lid 12 , base 14 , and sidewall 16 are fastened to provide a pressure-tight or airtight seal. Valve 23 is opened to allow for the flow of an inert carrier gas through vortex-generating tube 28 and into interior volume 17 .
- a precursor material through fill port 26 , such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a
- a heating source such as heating cartridges is used to bring the precursor material to sublimation temperature and form a precursor gas.
- the inert carrier gas combines with the precursor gas to form the precursor-containing fluid stream.
- the precursor-containing fluid stream passes through outlet 24 and through in-line filters 30 and 32 to a down stream production device such as a reaction chamber used for thin film deposition.
- the method of using the vessel disclosed herein includes introducing a precursor material through fill port 26 , such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a portion of the at least one protrusion and does not extend beyond the area of the interior volume 17 containing the at least one protrusion. Lid 12 , base 14 , and sidewall 16 are fastened to provide a pressure-tight or airtight seal. Valve 23 is opened to allow for the flow of an inert carrier gas through vortex-generating tube 28 and into interior volume 17 .
- a precursor material through fill port 26 , such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a
- a heating source such as heating cartridges is used to bring the precursor material to sublimation temperature and form a precursor gas.
- the inert carrier gas combines with the precursor gas to form the precursor-containing fluid stream.
- the precursor-containing fluid stream passes through outlet 24 and through in-line filters 30 and 32 to a down stream production device such as a reaction chamber used for thin film deposition.
- the method includes introducing a precursor material through fill port 108 , such as a solid precursor material, into the interior volume 113 of vessel 100 wherein the solid precursor material contacts one or more protrusions 112 that extend into the lower volume 119 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a portion of the at least one protrusion 101 and does not extend beyond the area of the lower volume 119 containing the at least one protrusion 101 . Lid 102 and body 104 are fastened to provide a pressure-tight or airtight seal. Valve 110 is opened to allow for the flow of an inert carrier gas through ‘T’ shaped tube 114 and into interior volume 113 .
- a precursor material through fill port 108 , such as a solid precursor material, into the interior volume 113 of vessel 100 wherein the solid precursor material contacts one or more protrusions 112 that extend into the lower volume 119 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at
- a heating source such as heating cartridges is used to bring the precursor material to sublimation temperature and form a precursor gas.
- the inert carrier gas combines with the precursor gas to form the precursor-containing fluid stream.
- the precursor-containing fluid stream passes through separator 118 , optional stainless steel frit 120 , and fluid outlet 112 to a down stream production device such as a reaction chamber used for thin film deposition.
- the solid precursor hafnium chloride (HfCl 4 ) was introduced into a vessel described herein and heated until it reached sublimation.
- a carrier gas, nitrogen, was introduced into the vessel at a flow rate of 1,000 sccm.
- a similar quantity of the precursor was introduced into a prior art quartz container.
- the prior art quartz container did not have protrusions that contacted the precursor material.
- a 80 g amount of precursor material was heated to 160° C. and 180° C., respectively, using a 5 second pulse and flow of 0.5 liters per minute (LPM).
- LPM 0.5 liters per minute
- the diamond, square and triangular data points represent data obtained using a 500 gram fill heated to the following conditions: 180° C., 5 second pulse, and 0.5 LPM, 160° C., 2 second pulse, and 1 LPM, and 160° C., 5 second pulse, and 0.5 LPM, respectively.
- FIG. 11 shows a specific embodiment of the lid, inlet and outlet of the present invention vessel 100 , showing the sidewall 104 having internal fins 101 and further having the upper lip 106 .
- Precursor can be added through fill port 108 .
- a separator 120 such as a filter, membrane, frit or similar planar segregating device, sits on the upper lip 106 of the sidewall 104 .
- Lid 102 has an upper volume 117 in which the inlet 110 and the outlet 112 terminate.
- the inlet 110 has a passage 210 that penetrates the lid 102 and has fluid connection radially to an inlet plenum 202 comprising a cylindrical body next to the lower surface of the lid.
- the inlet plenum 202 could be constructed of the same materials of construction as the lid and in fact, can be an integral part of the lid or a separate component fastened to the lid in any of the normal techniques, such as welding, bolting or frictional engagement.
- the inlet plenum 202 has an plenum chamber 217 that opens downwardly toward the separator 120 and preferably frictionally engages the separator 120 so that carrier gas entering the inlet 110 is forced to pass through the separator 120 downwardly into the precursor material. This causes intimate mixing of the carrier gas and the solid precursor material and the evolving precursor transitioning into the vapor phase.
- Carrier gas with fluidized precursor ascends from the lower volume of the vessel 100 below the separator 120 and passes through the separator 120 .
- the outlet 112 has a passage 212 which passes through the lid 102 and its inflow end in the upper volume 117 ends in a “T” shaped orifice 214 having two openings to receive the carrier gas and precursor product to be dispensed.
- the openings have a slanted configuration that allows the outlet to be placed very closely to the inner circumferential surface of the upper volume of the lid and the arc of its curvature.
- the slanted configuration of the outlet “T” shaped orifice 214 is best viewed in FIG. 12 .
- FIG. 12 shows the embodiment of FIG. 11 , looking up at the lid 102 from below where the base and sidewall 104 are positioned.
- the inlet 110 and the inlet passage 210 radially connects with the inlet plenum 202 and has flow communication with the plenum chamber 217 .
- the “T” shaped orifice 214 of the outlet 112 is shown with the slanted openings of the outlet that conform closely to the inner circumferential surface of the lid 102 .
- FIG. 13 shows a different configuration of the embodiment of FIG. 11 and 12 .
- the lid has not been illustrated so that the connection of the inlet 110 to the inlet plenum 202 can be seen with the axial connection of the inlet passage 210 to the inlet plenum 202 .
- the sidewall 104 of the vessel is shown with a depiction of the upper lip 106 where the separator would reside, although not illustrated in this view.
- the “T” shaped orifice 214 is shown toward the side of the inlet plenum 202 . It ultimately communicates to the outlet 112 .
- the port 108 is also illustrated.
- the separator can be any planar separator as described above, but one embodiment could be a 3.9 inch diameter 316L stainless steel filter disk fabricated from porous sheet material having a thickness of 0.047 inches, and having 99.9% efficiency for particles of 0.7 ⁇ M size, 99.0% efficiency for particles of 0.35 ⁇ M and 90% efficiency for all particle sizes, and with a bubble point of 2.0-2.5 Hg.
- FIGS. 11-13 reduce the variability rate of delivery of precursor entrained from the solid in the vessel by redirecting flow to more thoroughly sweep the volatilizing precursor from the precursor solid.
- this embodiment prevents entrainment of particles or solids from any source, including the solid precursor itself.
- This embodiment also allows the vessel to be placed in different orientations from upright during transport and handling without having a detrimental effect on particle generation or plugging of the inlet or outlet.
Abstract
Description
Claims (18)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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US11/867,171 US9109287B2 (en) | 2006-10-19 | 2007-10-04 | Solid source container with inlet plenum |
JP2007271345A JP4809313B2 (en) | 2006-10-19 | 2007-10-18 | Container containing inlet plenum and method of dispensing from container |
SG200717003-8A SG142265A1 (en) | 2006-10-19 | 2007-10-18 | Solid source container with inlet plenum |
KR20070104956A KR100960188B1 (en) | 2006-10-19 | 2007-10-18 | Solid source container with inlet plenum |
TW96139078A TWI344666B (en) | 2006-10-19 | 2007-10-18 | Solid source container with inlet plenum |
CN2007101999855A CN101245445B (en) | 2006-10-19 | 2007-10-19 | Solid source container with inlet plenum |
Applications Claiming Priority (2)
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US85301406P | 2006-10-19 | 2006-10-19 | |
US11/867,171 US9109287B2 (en) | 2006-10-19 | 2007-10-04 | Solid source container with inlet plenum |
Publications (2)
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US20080092816A1 US20080092816A1 (en) | 2008-04-24 |
US9109287B2 true US9109287B2 (en) | 2015-08-18 |
Family
ID=39316711
Family Applications (1)
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US11/867,171 Active 2032-12-05 US9109287B2 (en) | 2006-10-19 | 2007-10-04 | Solid source container with inlet plenum |
Country Status (6)
Country | Link |
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US (1) | US9109287B2 (en) |
JP (1) | JP4809313B2 (en) |
KR (1) | KR100960188B1 (en) |
CN (1) | CN101245445B (en) |
SG (1) | SG142265A1 (en) |
TW (1) | TWI344666B (en) |
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2007
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US10392700B2 (en) * | 2014-04-21 | 2019-08-27 | Entegris, Inc. | Solid vaporizer |
EP3081668A1 (en) | 2015-04-18 | 2016-10-19 | Air Products And Chemicals, Inc. | Vessel and method for delivery of precursor materials |
Also Published As
Publication number | Publication date |
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CN101245445A (en) | 2008-08-20 |
JP2008112994A (en) | 2008-05-15 |
SG142265A1 (en) | 2008-05-28 |
CN101245445B (en) | 2012-07-04 |
KR100960188B1 (en) | 2010-05-27 |
TW200820317A (en) | 2008-05-01 |
TWI344666B (en) | 2011-07-01 |
KR20080035482A (en) | 2008-04-23 |
JP4809313B2 (en) | 2011-11-09 |
US20080092816A1 (en) | 2008-04-24 |
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