US9109287B2 - Solid source container with inlet plenum - Google Patents

Solid source container with inlet plenum Download PDF

Info

Publication number
US9109287B2
US9109287B2 US11/867,171 US86717107A US9109287B2 US 9109287 B2 US9109287 B2 US 9109287B2 US 86717107 A US86717107 A US 86717107A US 9109287 B2 US9109287 B2 US 9109287B2
Authority
US
United States
Prior art keywords
vessel
separator
lid
volume
inlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US11/867,171
Other versions
US20080092816A1 (en
Inventor
Charles Michael Birtcher
Thomas Andrew Steidl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Versum Materials US LLC
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Priority to US11/867,171 priority Critical patent/US9109287B2/en
Priority to JP2007271345A priority patent/JP4809313B2/en
Priority to SG200717003-8A priority patent/SG142265A1/en
Priority to KR20070104956A priority patent/KR100960188B1/en
Priority to TW96139078A priority patent/TWI344666B/en
Priority to CN2007101999855A priority patent/CN101245445B/en
Assigned to AIR PRODUCTS AND CHEMICALS, INC. reassignment AIR PRODUCTS AND CHEMICALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BIRTCHER, CHARLES MICHAEL, STEIDL, THOMAS ANDREW
Publication of US20080092816A1 publication Critical patent/US20080092816A1/en
Publication of US9109287B2 publication Critical patent/US9109287B2/en
Application granted granted Critical
Assigned to CITIBANK, N.A., AS COLLATERAL AGENT reassignment CITIBANK, N.A., AS COLLATERAL AGENT PATENT SECURITY AGREEMENT Assignors: VERSUM MATERIALS US, LLC
Assigned to VERSUM MATERIALS US, LLC reassignment VERSUM MATERIALS US, LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AIR PRODUCTS AND CHEMICALS, INC.
Assigned to VERSUM MATERIALS US, LLC reassignment VERSUM MATERIALS US, LLC RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: CITIBANK, N.A., AS AGENT
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate

Definitions

  • Deposition processes such as, for example, chemical vapor deposition and atomic layer deposition processes, are used in one or more steps during the manufacture of a semiconductor device to form one or more films or coatings on the surface of a substrate.
  • a precursor source that may be in a solid and/or liquid phase is conveyed to a reaction chamber having one of more substrates contained therein where the precursor reacts under certain conditions such as temperature or pressure to form the coating or film on the substrate surface.
  • the present invention is a vessel for conveying a precursor-containing fluid stream from a precursor material contained within the vessel, the vessel comprising: an interior volume wherein the interior volume is segmented into an upper volume and a lower volume, wherein the upper volume and the lower volume are in fluid communication and the lower volume contains the precursor material; a lid comprising a fluid inlet which directs at least one carrier gas into the interior volume of the vessel, a fluid outlet, and an internal recess wherein at least a portion of the upper volume resides within the internal recess; a sidewall having an upper lip wherein at least a portion of the upper lip contacts the lid; a separator interposed between the lid and the sidewall wherein the separator resides adjacent the upper lip and segments the interior volume into the upper volume and a lower volume; and an inlet plenum in fluid communication with the fluid inlet having a plenum chamber opening towards the separator to direct the at least one carrier gas through the separator and towards the precursor material.
  • FIG. 1 is an exploded side view of one embodiment of the vessel disclosed herein.
  • FIG. 2 provides an assembled side view of the vessel of FIG. 1 illustrating the interior volume.
  • FIG. 3 is an isometric view of an integrated sidewall and base assembly of another embodiment of the vessel disclosed herein.
  • FIG. 4 is a top view of the integrated sidewall and base assembly of FIG. 2 .
  • FIG. 5 is an isometric view of a removable base of one embodiment of the present invention that contains a plurality of protrusions.
  • FIG. 6 is an exploded isometric view of one embodiment of the vessel disclosed herein that contains heater cartridges that are inserted into the vessel.
  • FIG. 7 a is an exploded, isometric view of the lid of the vessel in FIG. 7 .
  • FIG. 7 b is an assembled, isometric view of the lid of the vessel in FIG. 7 .
  • FIG. 7 d is a mixed elevation cross-sectional view of the lid of the vessel in FIG. 7 .
  • FIG. 7 e is an exploded, isometric view of the body of the vessel in FIG. 7 .
  • FIG. 7 f is an exploded, isometric view that shows the relationship between the separator and the body of the vessel in FIG. 7 .
  • FIG. 7 g is a top view illustrating a separator that is interposed between the body of the vessel in FIG. 7 and the lid (not shown).
  • FIG. 8 is a graph illustrating the relative delivery rate vs. % charge remaining for a vessel described herein and a prior art vessel using a fill of 80 grams of precursor and a temperature of 160° C.
  • FIG. 9 is a graph illustrating the relative delivery rate vs. % charge remaining for a vessel described herein and a prior art vessel using a fill of 80 grams of precursor and a temperature of 180° C.
  • FIG. 10 is a graph illustrating the relative delivery rate vs. % vessel life for a vessel described herein using a fill of 500 grams of precursor.
  • FIG. 11 is a cross-section of a specific embodiment of the lid, inlet and outlet of the present invention showing the inlet in radially connected to the inlet plenum.
  • FIG. 12 is a plan view taken along line 12 - 12 of FIG. 11 of the specific embodiment of the lid, inlet and outlet of the present invention.
  • a vessel for the vaporization of a precursor material, particularly a solid precursor, and a method comprising same are disclosed herein.
  • the vessel is typically constructed of a vessel having a base, lid, and sidewall that define an interior volume to contain the precursor material.
  • the precursor material may transform from a solid and/or liquid phase to its gaseous phase.
  • the precursor material may be a solid and/or a liquid.
  • the base, the sidewall, and/or the interior surface of the lid of the vessel have at least one protrusion, which extends into the interior volume and contacts the precursor material.
  • the at least one protrusion may aid in transferring the heat directly into the precursor material.
  • an inert carrier gas such as, for example, nitrogen, hydrogen, helium, argon, or other gas, is flowed through the interior volume and combines with the gaseous phase of the precursor material to provide a precursor-containing gaseous stream.
  • a vacuum may be used, alone or in conjunction with the inert gas, to withdraw the precursor-containing gaseous stream from the vessel.
  • the precursor-containing gaseous stream may be then delivered to downstream production equipment, such as, for example, a reaction chamber for deposition.
  • the vessel may provide for a continuous flow of precursor-containing gaseous stream while avoiding “cold spots” or other problems attributable to the condensation of vapors contained therein.
  • the vessel may also provide a consistent and reproducible flow rate, which may be advantageous for a variety of manufacturing processes.
  • FIGS. 1 and 2 provide an exploded side view and cross-sectional view, respectively, of one embodiment of the vessel of the present invention wherein the at least one protrusion extends from the base of the vessel.
  • the vessel is a vessel 10 having a lid 12 , a base 14 , sidewalls 16 , and a pair of seals 13 and 15 located near lid 12 and base 14 , respectively. While vessel 10 is shown as being substantially cylindrical in shape, it is understood that vessel may be shaped, for example, as a hollow square or rectangular tube.
  • Seals 13 and 15 which may be a seal, o-ring, gasket, insert or the like may be used to allow vessel 10 to maintain a vacuum or sustained pressure and may be constructed of a metal or a polymeric material.
  • lid 12 and/or base 14 may be aligned onto sidewall 16 to form an airtight or pressure-tight seal without the need for one or both of seals 13 and 15 .
  • Lid 12 may be fastened onto the sidewall 16 through the one or more fasteners 19 such as a screw or pin as shown in FIG. 1 .
  • lid 12 may be fastened onto sidewall 16 through grooves that correspond to complementary recesses that align and allow lid 12 to be fastened onto sidewall 16 (not shown).
  • lid 12 may be fastened onto sidewall 16 through welding, bonding, adhesives, or other means.
  • Alignment pins (not shown) may be used to ensure proper alignment and fit between the lid and the sidewall and/or the sidewall and base for embodiments where the base is removable.
  • Lid 12 , base 14 , and sidewalls 16 define an interior volume 17 to contain the precursor material.
  • Lid 12 , base 14 , and side walls 16 may be constructed of a metal or other material that can withstand the operating temperatures of vessel 10 .
  • at least a portion of lid 12 , base 14 , and side walls 16 may be chemically non-reactive to the precursor material contained therein.
  • at least a portion of lid 12 , base 14 , and side walls 16 may be thermally conductive.
  • Exemplary metals for lid 12 , base 14 , and side walls 16 include stainless steel, titanium, chrome, zirconium, monel, impervious graphite, molybdenum, cobalt, anodized aluminum, aluminum alloys, silver, silver alloys, copper, copper alloys, lead, nickel clad steel, graphite, a ceramic material, doped or undoped, or combinations thereof.
  • at least a portion of the surface that contacts the precursor may be plated with various metals such as titanium, chrome, silver, tantalum, gold, platinum, titanium and other materials wherein the aforementioned plating materials can be doped or undoped to increase surface compatibility.
  • the plating material may be non-reactive to the precursor material contained therein.
  • Lid 12 may contain a fluid inlet 22 for the flow of an inert carrier gas or mixture thereof and a fluid outlet 24 for the flow of the precursor-containing fluid stream.
  • exemplary inert carrier gases that may be introduced into vessel 10 through inlet 22 include, but not limited to, hydrogen, helium, neon, nitrogen, argon, xenon, krypton, or mixtures thereof.
  • the precursor-containing fluid stream is withdrawn from vessel 10 without the aid of a carrier gas but rather a vacuum, pressure differential, or other means.
  • inlet 22 and any valves or structures associated therewith may be optional.
  • Lid 12 is also depicted having a fill port 26 for introducing the precursor material (not shown) into interior volume 17 .
  • precursor material can be introduced into interior volume 17 through inlet 22 , base 14 (particularly in those embodiments where base 14 is removable) or other means besides fill port 26 .
  • inlet 22 and outlet 24 may include valves 23 and 25 that act to control the flow of fluid into and out of vessel 10 .
  • Valves 23 and 25 may be manual, automatic such as pneumatic, or the like and preferably are capable of operating at the operating temperatures of the vessel.
  • valves 23 and 25 may be fitted with disconnect fittings to faciliate removal of vessel 10 from the process line. Brackets (not shown) to minimize the bending of the inlet 22 and outlet 24 tubing may support valves 23 and 25 .
  • the inlet and outlet tubing may be connected with a standard gas tight fitting, such as a VCRTM fitting manufactured by the Swagelok Company of Cleveland, Ohio, that is used to connect two separate pieces of piping.
  • the outlet 24 may have one or more filters 30 and 32 that are placed in-line on the outlet tubing to remove any impurities or particulate matter from the precursor-containing fluid stream.
  • Filters 30 and 32 may be comprised of a porous material (not shown) that is chemically unreactive to the precursor-containing fluid stream and or sufficient particle size to capture any impurities or particulate matter in the precursor-containing fluid stream as it passes therethrough.
  • inlet 22 may further have a vortex-generating inlet 28 that directs the flow of the inert gas downward into the interior volume 17 and along the internal surface of sidewall 16 .
  • vortex generating inlet is depicted in FIGS. 1 and 2 as a tube that extends tangentially into interior volume 17 and resembles a “L”, it is envisioned that other configurations such as, for example, a fin extending from side wall 16 , a “J” shaped tube, or a “T” shaped tube may also direct the laminar flow of the inert carrier gas.
  • the “T” shaped tube may be angled on one or both ends and/or may be oversized.
  • outlet 24 may also have a tube that extends into interior volume 17 that has a “T” shaped tube or other configuration.
  • the “T” shaped tube on outlet 24 may be used in addition to, or in lieu of, the “T” shaped tube on the fluid inlet.
  • vessel 10 further comprises a thermally conductive jacket 18 that surrounds at least a portion of vessel 10 and is retained by fastners fitted in recesses 20 , such as bolt and nut combinations to provide a snug fit.
  • Thermally conductive jacket may allow for the uniform distribution of heat and improve the conduction of heat into the precursor material contained within the interior volume 17 of vessel 10 .
  • Thermally conductive jacket may be secured around vessel 10 via fasteners and/or a different material that allows for the expansion of the jacket upon heating.
  • thermally conductive jacket 18 may be comprised of aluminum whereas the sidewall 16 of vessel 10 may be comprised of stainless steel 16 .
  • Thermally conductive jacket 18 may be secured around sidewall 16 using springs to account for thermal expansion upon heating the vessel and precursor material contained therein.
  • Vessel 10 and the precursor material contained therein may be heated to the temperature at which the material is in its gaseous phase, or sublimation temperature when the precursor is a solid material, through a variety of means that include, but are not limited to, strip heaters, radiant heaters, circulating fluid heaters, resistant heating systems, inductive heating systems, or other means that can be used alone or in combination.
  • These heating sources may be external and/or internal in relation to vessel 10 .
  • the entire vessel 10 may be introduced into an oven.
  • base 14 may have one or more heating elements of cartridges contained therein.
  • FIG. 6 illustrates an embodiment wherein the heating cartridges 36 are inserted into the interior volume 17 of vessel 10 in various places.
  • Still other embodiments may employ one or more inductive heating coils operated by an RF power supply.
  • Yet other embodiments may employ a heater that is in fluid communication with the carrier gas supply that heats the carrier gas to a certain temperature prior to introduction into vessel 10 .
  • Vessel 10 may further have one or more thermocouples, thermistors, or other temperature sensitive devices that can monitor that temperature of vessel 10 and the precursor material contained therein.
  • the one or more thermocouples may be located in the base, lid, interior volume and/or other areas of the vessel.
  • the one or more thermocouples or other temperature sensitive devices may be connected to a controller or computer that is in electrical communication with the heating source to maintain a uniform temperature within the interior volume of the vessel and the chemical contained therein.
  • FIGS. 1 , 2 , and 5 provide an illustration of an embodiment wherein a plurality of “spike-shaped” protrusions 34 is employed.
  • Protrusions 34 may be comprised of a thermally conductive material or a composite thereof.
  • protrusions 34 may be comprised of a thermally conductive core such as copper 34 a and a non-reactive surface such as stainless steel 34 b that contacts the precursor material.
  • base 14 may be removable from sidewall 16 to allow for ease of cleaning and servicing.
  • protrusions 34 extend from base 14 in the Figures, it is envisioned that protrusions 34 may also extend into interior volume 17 from the sidewall 16 , lid 12 , base 14 , or combinations thereof. Protrusions 34 contact the precursor material contained therein to improve heat transfer. Protrusions 34 are arranged to allow for the unimpeded flow of gas between and amongst the protrusions and the precursor material contained therein. Further, protrusions 34 may also keep the precursor material from agglomerating.
  • FIGS. 3 and 4 depict a “clover-leaf” configured protrusion 34 ′ that extends from base 14 ′.
  • Base 14 ′ and sidewall 16 ′ are depicted as an integrated assembly; however, base 14 may be removable.
  • the cloverleaf configured protrusion 34 ′ may divide interior volume 17 ′ into separate, but interconnected, areas that allow the unimpeded flow of carrier gas within the volume.
  • FIG. 7 and FIGS. 7 a through 7 g provide an example of an embodiment of the vessel 100 disclosed herein where the at least one protrusion 101 are “fin-shaped” and extend from the sidewall 104 (which is an integrated sidewall and base assembly) of vessel 100 into interior volume 113 .
  • fin-shaped protrusions 101 are substantially perpendicular to fluid inlet assembly and fluid outlet assembly 110 and 112 .
  • vessel 100 consists of a lid 102 , sidewall 104 , an inner lip 106 , a fluid inlet assembly 110 that allows for the flow of an inert carrier gas or mixture thereof, a fluid outlet assembly 112 that allows for the flow of the precursor-containing fluid stream, and a fill port 108 for introducing the precursor material into interior volume 113 of vessel 100 .
  • fill port 108 may used as a level sensing port.
  • the port may contain, for example, a window, sensor, probe, and/or other means to detect the presence of precursor within the vessel.
  • FIGS. 7 a through 7 c provide various detailed views of lid 102 of vessel 100 .
  • vessel 100 has a “T” shaped tube 114 that aids in the flow of incoming carrier gas through 110 assembly into the interior volume 113 of vessel 100 .
  • “T” shaped tube 114 may reduce the laminar flow of the incoming carrier gas thereby minimizing the possibility of carrying unsublimated precursor in the outgoing precursor-containing fluid stream.
  • Lid 102 may further employ one or more alignment pins 111 to aid in the proper fitting and alignment of lid 102 to sidewall 116 .
  • FIG. 7 b provides a detailed side view of assembled lid 102 , which illustrates the inner recess 116 of lid 102 which may aid in directing the flow of the incoming carrier gas.
  • inner recess 116 contains at least a portion of upper volume 117 and may direct the flow of the incoming carrier gas away from the unsublimated precursor.
  • optional separator 118 may be added to the vessel to further prevent unsublimated precursor from mixing with the outgoing precursor-containing fluid stream.
  • FIGS. 7 e through 7 g provide an illustration of separator 118 that acts to partition the interior volume 113 of the vessel into upper volume 117 and a lower volume 119 between the lower body of the container and the lid. Separator 118 separates lid 102 (which are shown without inlet and outlet assemblies 110 and 112 and fill port 108 ) and base 104 .
  • vessel 10 and 100 may further include an optional stainless steel frit 120 , which may prevent unsublimated precursor from entering the outgoing precursor-containing fluid stream.
  • the optional stainless steel frit may have a pore size that ranges from 0.1 to 100 microns.
  • the optional frit can be installed anywhere within interior volume 113 and/or the fluid path of the outgoing precursor-containing fluid. In one particular embodiment such as that shown in FIG. 7 f , one or more frits may be installed in an inner recess 122 on separator 118 .
  • vessel 10 and 100 may further comprise a window (not shown in the figures) that is positioned to determine the contents within the interior volume 17 .
  • Suitable materials include transparent materials that have a sufficient thermal conductivity to minimize condensation and deposition of vapors on the window including, for example, diamond, sapphire, silicon carbide, transparent ceramic materials, and the like.
  • Operating temperatures of the vessel may vary depending upon the precursor material contained therein but may generally range from about 25° C. to about 500° C., or from about 100° C. to about 300° C. Operating pressure of the vessel may range from about 10 ⁇ 2 torr to about 1,000 torr, or from about 0.1 torr to about 200 torr.
  • the method of using the vessel disclosed herein includes introducing a precursor material through fill port 26 , such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a portion of the at least one protrusion and does not extend beyond the area of the interior volume 17 containing the at least one protrusion. Lid 12 , base 14 , and sidewall 16 are fastened to provide a pressure-tight or airtight seal. Valve 23 is opened to allow for the flow of an inert carrier gas through vortex-generating tube 28 and into interior volume 17 .
  • a precursor material through fill port 26 , such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a
  • a heating source such as heating cartridges is used to bring the precursor material to sublimation temperature and form a precursor gas.
  • the inert carrier gas combines with the precursor gas to form the precursor-containing fluid stream.
  • the precursor-containing fluid stream passes through outlet 24 and through in-line filters 30 and 32 to a down stream production device such as a reaction chamber used for thin film deposition.
  • the method of using the vessel disclosed herein includes introducing a precursor material through fill port 26 , such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a portion of the at least one protrusion and does not extend beyond the area of the interior volume 17 containing the at least one protrusion. Lid 12 , base 14 , and sidewall 16 are fastened to provide a pressure-tight or airtight seal. Valve 23 is opened to allow for the flow of an inert carrier gas through vortex-generating tube 28 and into interior volume 17 .
  • a precursor material through fill port 26 , such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a
  • a heating source such as heating cartridges is used to bring the precursor material to sublimation temperature and form a precursor gas.
  • the inert carrier gas combines with the precursor gas to form the precursor-containing fluid stream.
  • the precursor-containing fluid stream passes through outlet 24 and through in-line filters 30 and 32 to a down stream production device such as a reaction chamber used for thin film deposition.
  • the method includes introducing a precursor material through fill port 108 , such as a solid precursor material, into the interior volume 113 of vessel 100 wherein the solid precursor material contacts one or more protrusions 112 that extend into the lower volume 119 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a portion of the at least one protrusion 101 and does not extend beyond the area of the lower volume 119 containing the at least one protrusion 101 . Lid 102 and body 104 are fastened to provide a pressure-tight or airtight seal. Valve 110 is opened to allow for the flow of an inert carrier gas through ‘T’ shaped tube 114 and into interior volume 113 .
  • a precursor material through fill port 108 , such as a solid precursor material, into the interior volume 113 of vessel 100 wherein the solid precursor material contacts one or more protrusions 112 that extend into the lower volume 119 . It is preferable that the precursor material is filled to the point where it is in continuous contact with at
  • a heating source such as heating cartridges is used to bring the precursor material to sublimation temperature and form a precursor gas.
  • the inert carrier gas combines with the precursor gas to form the precursor-containing fluid stream.
  • the precursor-containing fluid stream passes through separator 118 , optional stainless steel frit 120 , and fluid outlet 112 to a down stream production device such as a reaction chamber used for thin film deposition.
  • the solid precursor hafnium chloride (HfCl 4 ) was introduced into a vessel described herein and heated until it reached sublimation.
  • a carrier gas, nitrogen, was introduced into the vessel at a flow rate of 1,000 sccm.
  • a similar quantity of the precursor was introduced into a prior art quartz container.
  • the prior art quartz container did not have protrusions that contacted the precursor material.
  • a 80 g amount of precursor material was heated to 160° C. and 180° C., respectively, using a 5 second pulse and flow of 0.5 liters per minute (LPM).
  • LPM 0.5 liters per minute
  • the diamond, square and triangular data points represent data obtained using a 500 gram fill heated to the following conditions: 180° C., 5 second pulse, and 0.5 LPM, 160° C., 2 second pulse, and 1 LPM, and 160° C., 5 second pulse, and 0.5 LPM, respectively.
  • FIG. 11 shows a specific embodiment of the lid, inlet and outlet of the present invention vessel 100 , showing the sidewall 104 having internal fins 101 and further having the upper lip 106 .
  • Precursor can be added through fill port 108 .
  • a separator 120 such as a filter, membrane, frit or similar planar segregating device, sits on the upper lip 106 of the sidewall 104 .
  • Lid 102 has an upper volume 117 in which the inlet 110 and the outlet 112 terminate.
  • the inlet 110 has a passage 210 that penetrates the lid 102 and has fluid connection radially to an inlet plenum 202 comprising a cylindrical body next to the lower surface of the lid.
  • the inlet plenum 202 could be constructed of the same materials of construction as the lid and in fact, can be an integral part of the lid or a separate component fastened to the lid in any of the normal techniques, such as welding, bolting or frictional engagement.
  • the inlet plenum 202 has an plenum chamber 217 that opens downwardly toward the separator 120 and preferably frictionally engages the separator 120 so that carrier gas entering the inlet 110 is forced to pass through the separator 120 downwardly into the precursor material. This causes intimate mixing of the carrier gas and the solid precursor material and the evolving precursor transitioning into the vapor phase.
  • Carrier gas with fluidized precursor ascends from the lower volume of the vessel 100 below the separator 120 and passes through the separator 120 .
  • the outlet 112 has a passage 212 which passes through the lid 102 and its inflow end in the upper volume 117 ends in a “T” shaped orifice 214 having two openings to receive the carrier gas and precursor product to be dispensed.
  • the openings have a slanted configuration that allows the outlet to be placed very closely to the inner circumferential surface of the upper volume of the lid and the arc of its curvature.
  • the slanted configuration of the outlet “T” shaped orifice 214 is best viewed in FIG. 12 .
  • FIG. 12 shows the embodiment of FIG. 11 , looking up at the lid 102 from below where the base and sidewall 104 are positioned.
  • the inlet 110 and the inlet passage 210 radially connects with the inlet plenum 202 and has flow communication with the plenum chamber 217 .
  • the “T” shaped orifice 214 of the outlet 112 is shown with the slanted openings of the outlet that conform closely to the inner circumferential surface of the lid 102 .
  • FIG. 13 shows a different configuration of the embodiment of FIG. 11 and 12 .
  • the lid has not been illustrated so that the connection of the inlet 110 to the inlet plenum 202 can be seen with the axial connection of the inlet passage 210 to the inlet plenum 202 .
  • the sidewall 104 of the vessel is shown with a depiction of the upper lip 106 where the separator would reside, although not illustrated in this view.
  • the “T” shaped orifice 214 is shown toward the side of the inlet plenum 202 . It ultimately communicates to the outlet 112 .
  • the port 108 is also illustrated.
  • the separator can be any planar separator as described above, but one embodiment could be a 3.9 inch diameter 316L stainless steel filter disk fabricated from porous sheet material having a thickness of 0.047 inches, and having 99.9% efficiency for particles of 0.7 ⁇ M size, 99.0% efficiency for particles of 0.35 ⁇ M and 90% efficiency for all particle sizes, and with a bubble point of 2.0-2.5 Hg.
  • FIGS. 11-13 reduce the variability rate of delivery of precursor entrained from the solid in the vessel by redirecting flow to more thoroughly sweep the volatilizing precursor from the precursor solid.
  • this embodiment prevents entrainment of particles or solids from any source, including the solid precursor itself.
  • This embodiment also allows the vessel to be placed in different orientations from upright during transport and handling without having a detrimental effect on particle generation or plugging of the inlet or outlet.

Abstract

A vessel for conveying a precursor fluid from the vessel, comprising: an interior volume having an upper volume and a lower volume, wherein the two volumes are in communication and the lower volume contains precursor; a lid comprising a fluid inlet directing carrier gas into the vessel, a “T” fluid outlet, a sidewall having an upper lip wherein the upper lip contacts the lid; a separator interposed between the lid and the sidewall wherein the separator resides adjacent the upper lip and segments the interior volume into the upper volume and a lower volume; and an inlet plenum in communication with the fluid inlet having a plenum chamber opening towards the separator to direct the carrier gas through the separator and towards the precursor. A method for using the apparatus is also disclosed.

Description

This patent application claims the benefit of U.S. Provisional Patent Application Ser. No. 60/853014 filed 19 Oct. 2006.
BACKGROUND OF THE INVENTION
Deposition processes such as, for example, chemical vapor deposition and atomic layer deposition processes, are used in one or more steps during the manufacture of a semiconductor device to form one or more films or coatings on the surface of a substrate. In a typical CVD or ALD process, a precursor source that may be in a solid and/or liquid phase is conveyed to a reaction chamber having one of more substrates contained therein where the precursor reacts under certain conditions such as temperature or pressure to form the coating or film on the substrate surface.
When a solid precursor material is used in a CVD or ALD process, the precursor material is typically heated in a separate chamber such as an oven to a temperature sufficient to form a gas, which is then transported, typically in conjunction with a carrier gas, to the reaction chamber. In some instances, the solid precursor material is heated to its gaseous phase without forming an intermediate liquid phase. The vaporization of a solid precursor material presents difficulties in generating and conveying the precursor-containing vapor to the reaction chambers. Typical difficulties encountered include, but are not limited to, deposit buildup within the vessel, vaporizer and/or delivery lines; condensation of liquid- or solid-phase material within the vessel, vaporizer and/or delivery lines, formation of “cold spots” within the interior of the vessel; and inconsistent vapor flow to downstream reaction chambers. These difficulties may result in extended “down time” of the production equipment to remove liquid or particulate matter and may also produce relatively poor quality deposited films.
BRIEF SUMMARY OF THE INVENTION
The present invention is a vessel for conveying a precursor-containing fluid stream from a precursor material contained within the vessel, the vessel comprising: an interior volume wherein the interior volume is segmented into an upper volume and a lower volume, wherein the upper volume and the lower volume are in fluid communication and the lower volume contains the precursor material; a lid comprising a fluid inlet which directs at least one carrier gas into the interior volume of the vessel, a fluid outlet, and an internal recess wherein at least a portion of the upper volume resides within the internal recess; a sidewall having an upper lip wherein at least a portion of the upper lip contacts the lid; a separator interposed between the lid and the sidewall wherein the separator resides adjacent the upper lip and segments the interior volume into the upper volume and a lower volume; and an inlet plenum in fluid communication with the fluid inlet having a plenum chamber opening towards the separator to direct the at least one carrier gas through the separator and towards the precursor material.
The present invention is also a method for dispensing a precursor-containing fluid stream comprising a gaseous phase of a precursor from a vessel, the method comprising: providing a vessel having an interior volume comprising a lower and an upper volume separated by a separator wherein the vessel comprises: a lid having an inlet with an inlet plenum having a plenum chamber and an outlet having a “T” shaped orifice; a sidewall having an upper lip wherein at least a portion of the upper lip contacts the lip and a base connected to the sidewall; introducing at least one carrier gas into the vessel through the inlet wherein the at least one carrier gas is directed by the plenum chamber of the inlet plenum in a downward flow through the separator wherein the at least one carrier gas and the gaseous phase of the precursor combine to form the fluid stream; and removing the fluid stream from the vessel through the separator and the “T” shaped orifice outlet and dispensing it to a downstream deposition system.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is an exploded side view of one embodiment of the vessel disclosed herein.
FIG. 2 provides an assembled side view of the vessel of FIG. 1 illustrating the interior volume.
FIG. 3 is an isometric view of an integrated sidewall and base assembly of another embodiment of the vessel disclosed herein.
FIG. 4 is a top view of the integrated sidewall and base assembly of FIG. 2.
FIG. 5 is an isometric view of a removable base of one embodiment of the present invention that contains a plurality of protrusions.
FIG. 6 is an exploded isometric view of one embodiment of the vessel disclosed herein that contains heater cartridges that are inserted into the vessel.
FIG. 7 provides an exploded, isometric view of another vessel disclosed herein wherein the protrusions are “fin-like” and extend from the sidewalls.
FIG. 7 a is an exploded, isometric view of the lid of the vessel in FIG. 7.
FIG. 7 b is an assembled, isometric view of the lid of the vessel in FIG. 7.
FIG. 7 c is a top view of the lid of the vessel in FIG. 7.
FIG. 7 d is a mixed elevation cross-sectional view of the lid of the vessel in FIG. 7.
FIG. 7 e is an exploded, isometric view of the body of the vessel in FIG. 7.
FIG. 7 f is an exploded, isometric view that shows the relationship between the separator and the body of the vessel in FIG. 7.
FIG. 7 g is a top view illustrating a separator that is interposed between the body of the vessel in FIG. 7 and the lid (not shown).
FIG. 8 is a graph illustrating the relative delivery rate vs. % charge remaining for a vessel described herein and a prior art vessel using a fill of 80 grams of precursor and a temperature of 160° C.
FIG. 9 is a graph illustrating the relative delivery rate vs. % charge remaining for a vessel described herein and a prior art vessel using a fill of 80 grams of precursor and a temperature of 180° C.
FIG. 10 is a graph illustrating the relative delivery rate vs. % vessel life for a vessel described herein using a fill of 500 grams of precursor.
FIG. 11 is a cross-section of a specific embodiment of the lid, inlet and outlet of the present invention showing the inlet in radially connected to the inlet plenum.
FIG. 12 is a plan view taken along line 12-12 of FIG. 11 of the specific embodiment of the lid, inlet and outlet of the present invention.
FIG. 13 is perspective view of the inlet without the lid showing the details of the inlet plenum and the manifolding above both the inlet and outlet with the inlet axially connected to the inlet plenum. The sidewall is shown only in partial section.
DETAILED DESCRIPTION OF THE INVENTION
A vessel for the vaporization of a precursor material, particularly a solid precursor, and a method comprising same are disclosed herein. The vessel is typically constructed of a vessel having a base, lid, and sidewall that define an interior volume to contain the precursor material. Upon application of heat, the precursor material may transform from a solid and/or liquid phase to its gaseous phase. The precursor material may be a solid and/or a liquid. Examples of precursor materials that may be used in the vessel include, but are not limited to, dimethyl hydrazine, trimethyl aluminum (TMA), hafnium chloride (HfCl4), zirconium chloride (ZrCl4), indium trichloride, aluminum trichloride, titanium iodide, tungsten carbonyl, Ba(DPM)2, bis di pivaloyl methanato strontium (Sr(DPM)2), TiO (DPM)2, tetra di pivaloyl methanato zirconium (Zr(DPM)4), decaborane, boron, magnesium, gallium, indium, antimony, copper, phosphorous, arsenic, lithium, sodium tetrafluoroborates, inorganic precursors incorporating alkyl-amidinate ligands, organometallic precursors such as zirconium tertiary butoxide (Zr (t-OBu)4), tetrakisdiethylaminozirconium (Zr(NEt2)4), tetrakisdiethylaminohafnium (Hf(NEt2)4), tetrakis (dimethylamino) titanium (TDMAT), tertbutyliminotris(deithylamino)tantalum (TBTDET), pentakis(dimethylamino)tantalum (PDMAT), pentakis (ethylmethylamino)tantalum (PEMAT), tetrakisdimethylaminozirconium (Zr(NMe2)4), and hafniumtertiarybutoxide (Hf(t-OBu)4), and mixtures thereof.
In one embodiment, the base, the sidewall, and/or the interior surface of the lid of the vessel have at least one protrusion, which extends into the interior volume and contacts the precursor material. The at least one protrusion may aid in transferring the heat directly into the precursor material. In one embodiment, an inert carrier gas such as, for example, nitrogen, hydrogen, helium, argon, or other gas, is flowed through the interior volume and combines with the gaseous phase of the precursor material to provide a precursor-containing gaseous stream. In another embodiment, a vacuum may be used, alone or in conjunction with the inert gas, to withdraw the precursor-containing gaseous stream from the vessel. The precursor-containing gaseous stream may be then delivered to downstream production equipment, such as, for example, a reaction chamber for deposition. The vessel may provide for a continuous flow of precursor-containing gaseous stream while avoiding “cold spots” or other problems attributable to the condensation of vapors contained therein. The vessel may also provide a consistent and reproducible flow rate, which may be advantageous for a variety of manufacturing processes.
FIGS. 1 and 2 provide an exploded side view and cross-sectional view, respectively, of one embodiment of the vessel of the present invention wherein the at least one protrusion extends from the base of the vessel. In FIGS. 1 and 2, the vessel is a vessel 10 having a lid 12, a base 14, sidewalls 16, and a pair of seals 13 and 15 located near lid 12 and base 14, respectively. While vessel 10 is shown as being substantially cylindrical in shape, it is understood that vessel may be shaped, for example, as a hollow square or rectangular tube. Seals 13 and 15 which may be a seal, o-ring, gasket, insert or the like may be used to allow vessel 10 to maintain a vacuum or sustained pressure and may be constructed of a metal or a polymeric material. Alternatively, lid 12 and/or base 14 may be aligned onto sidewall 16 to form an airtight or pressure-tight seal without the need for one or both of seals 13 and 15. Lid 12 may be fastened onto the sidewall 16 through the one or more fasteners 19 such as a screw or pin as shown in FIG. 1. In an alternative embodiment, lid 12 may be fastened onto sidewall 16 through grooves that correspond to complementary recesses that align and allow lid 12 to be fastened onto sidewall 16 (not shown). In still further embodiments, lid 12 may be fastened onto sidewall 16 through welding, bonding, adhesives, or other means. Alignment pins (not shown) may be used to ensure proper alignment and fit between the lid and the sidewall and/or the sidewall and base for embodiments where the base is removable.
Lid 12, base 14, and sidewalls 16 define an interior volume 17 to contain the precursor material. Lid 12, base 14, and side walls 16 may be constructed of a metal or other material that can withstand the operating temperatures of vessel 10. In certain embodiments, at least a portion of lid 12, base 14, and side walls 16 may be chemically non-reactive to the precursor material contained therein. In these or in alternative embodiments, at least a portion of lid 12, base 14, and side walls 16 may be thermally conductive. Exemplary metals for lid 12, base 14, and side walls 16 include stainless steel, titanium, chrome, zirconium, monel, impervious graphite, molybdenum, cobalt, anodized aluminum, aluminum alloys, silver, silver alloys, copper, copper alloys, lead, nickel clad steel, graphite, a ceramic material, doped or undoped, or combinations thereof. In one embodiment, at least a portion of the surface that contacts the precursor may be plated with various metals such as titanium, chrome, silver, tantalum, gold, platinum, titanium and other materials wherein the aforementioned plating materials can be doped or undoped to increase surface compatibility. In these embodiments, the plating material may be non-reactive to the precursor material contained therein.
Lid 12 may contain a fluid inlet 22 for the flow of an inert carrier gas or mixture thereof and a fluid outlet 24 for the flow of the precursor-containing fluid stream. Exemplary inert carrier gases that may be introduced into vessel 10 through inlet 22 include, but not limited to, hydrogen, helium, neon, nitrogen, argon, xenon, krypton, or mixtures thereof. In certain embodiments, the precursor-containing fluid stream is withdrawn from vessel 10 without the aid of a carrier gas but rather a vacuum, pressure differential, or other means. In these embodiments, inlet 22 and any valves or structures associated therewith may be optional. Lid 12 is also depicted having a fill port 26 for introducing the precursor material (not shown) into interior volume 17. In alternative embodiments, precursor material can be introduced into interior volume 17 through inlet 22, base 14 (particularly in those embodiments where base 14 is removable) or other means besides fill port 26. In some embodiments, such as that depicted in FIGS. 1 and 2, inlet 22 and outlet 24 may include valves 23 and 25 that act to control the flow of fluid into and out of vessel 10. Valves 23 and 25 may be manual, automatic such as pneumatic, or the like and preferably are capable of operating at the operating temperatures of the vessel. In certain embodiments, valves 23 and 25 may be fitted with disconnect fittings to faciliate removal of vessel 10 from the process line. Brackets (not shown) to minimize the bending of the inlet 22 and outlet 24 tubing may support valves 23 and 25. Further, the inlet and outlet tubing may be connected with a standard gas tight fitting, such as a VCR™ fitting manufactured by the Swagelok Company of Cleveland, Ohio, that is used to connect two separate pieces of piping. In some embodiments, the outlet 24 may have one or more filters 30 and 32 that are placed in-line on the outlet tubing to remove any impurities or particulate matter from the precursor-containing fluid stream. Filters 30 and 32 may be comprised of a porous material (not shown) that is chemically unreactive to the precursor-containing fluid stream and or sufficient particle size to capture any impurities or particulate matter in the precursor-containing fluid stream as it passes therethrough.
In some embodiments such as that shown in FIGS. 1 and 2, inlet 22 may further have a vortex-generating inlet 28 that directs the flow of the inert gas downward into the interior volume 17 and along the internal surface of sidewall 16. While vortex generating inlet is depicted in FIGS. 1 and 2 as a tube that extends tangentially into interior volume 17 and resembles a “L”, it is envisioned that other configurations such as, for example, a fin extending from side wall 16, a “J” shaped tube, or a “T” shaped tube may also direct the laminar flow of the inert carrier gas. In the latter embodiment, the “T” shaped tube may be angled on one or both ends and/or may be oversized. In certain embodiments, outlet 24 may also have a tube that extends into interior volume 17 that has a “T” shaped tube or other configuration. In these embodiments, the “T” shaped tube on outlet 24 may be used in addition to, or in lieu of, the “T” shaped tube on the fluid inlet.
In the embodiment shown in FIGS. 1 and 2, vessel 10 further comprises a thermally conductive jacket 18 that surrounds at least a portion of vessel 10 and is retained by fastners fitted in recesses 20, such as bolt and nut combinations to provide a snug fit. Thermally conductive jacket may allow for the uniform distribution of heat and improve the conduction of heat into the precursor material contained within the interior volume 17 of vessel 10. Thermally conductive jacket may be secured around vessel 10 via fasteners and/or a different material that allows for the expansion of the jacket upon heating. For example, thermally conductive jacket 18 may be comprised of aluminum whereas the sidewall 16 of vessel 10 may be comprised of stainless steel 16. Thermally conductive jacket 18 may be secured around sidewall 16 using springs to account for thermal expansion upon heating the vessel and precursor material contained therein.
Vessel 10 and the precursor material contained therein may be heated to the temperature at which the material is in its gaseous phase, or sublimation temperature when the precursor is a solid material, through a variety of means that include, but are not limited to, strip heaters, radiant heaters, circulating fluid heaters, resistant heating systems, inductive heating systems, or other means that can be used alone or in combination. These heating sources may be external and/or internal in relation to vessel 10. In some embodiments, the entire vessel 10 may be introduced into an oven. In other embodiments, base 14 may have one or more heating elements of cartridges contained therein. FIG. 6 illustrates an embodiment wherein the heating cartridges 36 are inserted into the interior volume 17 of vessel 10 in various places. Still other embodiments may employ one or more inductive heating coils operated by an RF power supply. Yet other embodiments may employ a heater that is in fluid communication with the carrier gas supply that heats the carrier gas to a certain temperature prior to introduction into vessel 10.
Vessel 10 may further have one or more thermocouples, thermistors, or other temperature sensitive devices that can monitor that temperature of vessel 10 and the precursor material contained therein. The one or more thermocouples may be located in the base, lid, interior volume and/or other areas of the vessel. The one or more thermocouples or other temperature sensitive devices may be connected to a controller or computer that is in electrical communication with the heating source to maintain a uniform temperature within the interior volume of the vessel and the chemical contained therein.
Vessel 10 may further have one or more protrusions 34 that extend into the interior volume 17. FIGS. 1, 2, and 5 provide an illustration of an embodiment wherein a plurality of “spike-shaped” protrusions 34 is employed. Protrusions 34 may be comprised of a thermally conductive material or a composite thereof. In some embodiments such as that illustrated in FIG. 2, protrusions 34 may be comprised of a thermally conductive core such as copper 34 a and a non-reactive surface such as stainless steel 34 b that contacts the precursor material. In the embodiment shown in FIG. 5, base 14 may be removable from sidewall 16 to allow for ease of cleaning and servicing. While protrusions 34 extend from base 14 in the Figures, it is envisioned that protrusions 34 may also extend into interior volume 17 from the sidewall 16, lid 12, base 14, or combinations thereof. Protrusions 34 contact the precursor material contained therein to improve heat transfer. Protrusions 34 are arranged to allow for the unimpeded flow of gas between and amongst the protrusions and the precursor material contained therein. Further, protrusions 34 may also keep the precursor material from agglomerating.
FIGS. 3 and 4 depict a “clover-leaf” configured protrusion 34′ that extends from base 14′. Base 14′ and sidewall 16′ are depicted as an integrated assembly; however, base 14 may be removable. The cloverleaf configured protrusion 34′ may divide interior volume 17′ into separate, but interconnected, areas that allow the unimpeded flow of carrier gas within the volume.
FIG. 7 and FIGS. 7 a through 7 g provide an example of an embodiment of the vessel 100 disclosed herein where the at least one protrusion 101 are “fin-shaped” and extend from the sidewall 104 (which is an integrated sidewall and base assembly) of vessel 100 into interior volume 113. In the embodiment depicted, fin-shaped protrusions 101 are substantially perpendicular to fluid inlet assembly and fluid outlet assembly 110 and 112. Referring again to FIG. 7, vessel 100 consists of a lid 102, sidewall 104, an inner lip 106, a fluid inlet assembly 110 that allows for the flow of an inert carrier gas or mixture thereof, a fluid outlet assembly 112 that allows for the flow of the precursor-containing fluid stream, and a fill port 108 for introducing the precursor material into interior volume 113 of vessel 100. In certain embodiments, fill port 108 may used as a level sensing port. In these embodiments, the port may contain, for example, a window, sensor, probe, and/or other means to detect the presence of precursor within the vessel.
FIGS. 7 a through 7 c provide various detailed views of lid 102 of vessel 100. As shown in FIGS. 7 a and 7 b, vessel 100 has a “T” shaped tube 114 that aids in the flow of incoming carrier gas through 110 assembly into the interior volume 113 of vessel 100. In these embodiments, “T” shaped tube 114 may reduce the laminar flow of the incoming carrier gas thereby minimizing the possibility of carrying unsublimated precursor in the outgoing precursor-containing fluid stream. Lid 102 may further employ one or more alignment pins 111 to aid in the proper fitting and alignment of lid 102 to sidewall 116.
FIG. 7 b provides a detailed side view of assembled lid 102, which illustrates the inner recess 116 of lid 102 which may aid in directing the flow of the incoming carrier gas. As FIG. 7 b illustrates, inner recess 116 contains at least a portion of upper volume 117 and may direct the flow of the incoming carrier gas away from the unsublimated precursor.
In certain embodiments, optional separator 118 may be added to the vessel to further prevent unsublimated precursor from mixing with the outgoing precursor-containing fluid stream. FIGS. 7 e through 7 g provide an illustration of separator 118 that acts to partition the interior volume 113 of the vessel into upper volume 117 and a lower volume 119 between the lower body of the container and the lid. Separator 118 separates lid 102 (which are shown without inlet and outlet assemblies 110 and 112 and fill port 108) and base 104.
Depending upon the precursor, there may be a need to stop the entrainment of solid in the outgoing precursor-containing fluid stream. In these embodiments, vessel 10 and 100 may further include an optional stainless steel frit 120, which may prevent unsublimated precursor from entering the outgoing precursor-containing fluid stream. The optional stainless steel frit may have a pore size that ranges from 0.1 to 100 microns. The optional frit can be installed anywhere within interior volume 113 and/or the fluid path of the outgoing precursor-containing fluid. In one particular embodiment such as that shown in FIG. 7 f, one or more frits may be installed in an inner recess 122 on separator 118.
In one embodiment, vessel 10 and 100 may further comprise a window (not shown in the figures) that is positioned to determine the contents within the interior volume 17. Suitable materials include transparent materials that have a sufficient thermal conductivity to minimize condensation and deposition of vapors on the window including, for example, diamond, sapphire, silicon carbide, transparent ceramic materials, and the like.
Operating temperatures of the vessel may vary depending upon the precursor material contained therein but may generally range from about 25° C. to about 500° C., or from about 100° C. to about 300° C. Operating pressure of the vessel may range from about 10−2 torr to about 1,000 torr, or from about 0.1 torr to about 200 torr.
In one embodiment, the method of using the vessel disclosed herein includes introducing a precursor material through fill port 26, such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17. It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a portion of the at least one protrusion and does not extend beyond the area of the interior volume 17 containing the at least one protrusion. Lid 12, base 14, and sidewall 16 are fastened to provide a pressure-tight or airtight seal. Valve 23 is opened to allow for the flow of an inert carrier gas through vortex-generating tube 28 and into interior volume 17. A heating source such as heating cartridges is used to bring the precursor material to sublimation temperature and form a precursor gas. The inert carrier gas combines with the precursor gas to form the precursor-containing fluid stream. The precursor-containing fluid stream passes through outlet 24 and through in-line filters 30 and 32 to a down stream production device such as a reaction chamber used for thin film deposition.
In one embodiment, the method of using the vessel disclosed herein includes introducing a precursor material through fill port 26, such as a solid precursor material, into the interior volume 17 of vessel 10 wherein the solid precursor material contacts one or more protrusions 34 that extend into the interior volume 17. It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a portion of the at least one protrusion and does not extend beyond the area of the interior volume 17 containing the at least one protrusion. Lid 12, base 14, and sidewall 16 are fastened to provide a pressure-tight or airtight seal. Valve 23 is opened to allow for the flow of an inert carrier gas through vortex-generating tube 28 and into interior volume 17. A heating source such as heating cartridges is used to bring the precursor material to sublimation temperature and form a precursor gas. The inert carrier gas combines with the precursor gas to form the precursor-containing fluid stream. The precursor-containing fluid stream passes through outlet 24 and through in-line filters 30 and 32 to a down stream production device such as a reaction chamber used for thin film deposition.
In yet another embodiment, the method includes introducing a precursor material through fill port 108, such as a solid precursor material, into the interior volume 113 of vessel 100 wherein the solid precursor material contacts one or more protrusions 112 that extend into the lower volume 119. It is preferable that the precursor material is filled to the point where it is in continuous contact with at least a portion of the at least one protrusion 101 and does not extend beyond the area of the lower volume 119 containing the at least one protrusion 101. Lid 102 and body 104 are fastened to provide a pressure-tight or airtight seal. Valve 110 is opened to allow for the flow of an inert carrier gas through ‘T’ shaped tube 114 and into interior volume 113. A heating source such as heating cartridges is used to bring the precursor material to sublimation temperature and form a precursor gas. The inert carrier gas combines with the precursor gas to form the precursor-containing fluid stream. The precursor-containing fluid stream passes through separator 118, optional stainless steel frit 120, and fluid outlet 112 to a down stream production device such as a reaction chamber used for thin film deposition.
The vessel and method will be illustrated in more detail with reference to the following Examples, but it should be understood that the present invention is not deemed to be limited thereto.
EXAMPLES
The solid precursor hafnium chloride (HfCl4) was introduced into a vessel described herein and heated until it reached sublimation. A carrier gas, nitrogen, was introduced into the vessel at a flow rate of 1,000 sccm. A similar quantity of the precursor was introduced into a prior art quartz container. The prior art quartz container did not have protrusions that contacted the precursor material. In FIGS. 8 and 9, a 80 g amount of precursor material was heated to 160° C. and 180° C., respectively, using a 5 second pulse and flow of 0.5 liters per minute (LPM). In FIG. 10, the diamond, square and triangular data points represent data obtained using a 500 gram fill heated to the following conditions: 180° C., 5 second pulse, and 0.5 LPM, 160° C., 2 second pulse, and 1 LPM, and 160° C., 5 second pulse, and 0.5 LPM, respectively.
FIG. 11 shows a specific embodiment of the lid, inlet and outlet of the present invention vessel 100, showing the sidewall 104 having internal fins 101 and further having the upper lip 106. Precursor can be added through fill port 108. A separator 120, such as a filter, membrane, frit or similar planar segregating device, sits on the upper lip 106 of the sidewall 104. Lid 102 has an upper volume 117 in which the inlet 110 and the outlet 112 terminate. The inlet 110 has a passage 210 that penetrates the lid 102 and has fluid connection radially to an inlet plenum 202 comprising a cylindrical body next to the lower surface of the lid. The inlet plenum 202 could be constructed of the same materials of construction as the lid and in fact, can be an integral part of the lid or a separate component fastened to the lid in any of the normal techniques, such as welding, bolting or frictional engagement. The inlet plenum 202 has an plenum chamber 217 that opens downwardly toward the separator 120 and preferably frictionally engages the separator 120 so that carrier gas entering the inlet 110 is forced to pass through the separator 120 downwardly into the precursor material. This causes intimate mixing of the carrier gas and the solid precursor material and the evolving precursor transitioning into the vapor phase.
Carrier gas with fluidized precursor, preferably vaporized, ascends from the lower volume of the vessel 100 below the separator 120 and passes through the separator 120. By passing the carrier gas down through the separator 120, entraining the precursor and passing back up through the separator 120 before dispensing assures that solid precursor does not leave the outlet with the dispensed precursor product, nor does the inlet face potential contamination in a backflow situation. The outlet 112 has a passage 212 which passes through the lid 102 and its inflow end in the upper volume 117 ends in a “T” shaped orifice 214 having two openings to receive the carrier gas and precursor product to be dispensed. The openings have a slanted configuration that allows the outlet to be placed very closely to the inner circumferential surface of the upper volume of the lid and the arc of its curvature. The slanted configuration of the outlet “T” shaped orifice 214 is best viewed in FIG. 12.
FIG. 12 shows the embodiment of FIG. 11, looking up at the lid 102 from below where the base and sidewall 104 are positioned. The inlet 110 and the inlet passage 210 radially connects with the inlet plenum 202 and has flow communication with the plenum chamber 217. The “T” shaped orifice 214 of the outlet 112 is shown with the slanted openings of the outlet that conform closely to the inner circumferential surface of the lid 102.
FIG. 13 shows a different configuration of the embodiment of FIG. 11 and 12. The lid has not been illustrated so that the connection of the inlet 110 to the inlet plenum 202 can be seen with the axial connection of the inlet passage 210 to the inlet plenum 202. The sidewall 104 of the vessel is shown with a depiction of the upper lip 106 where the separator would reside, although not illustrated in this view. The “T” shaped orifice 214 is shown toward the side of the inlet plenum 202. It ultimately communicates to the outlet 112. The port 108 is also illustrated.
The separator can be any planar separator as described above, but one embodiment could be a 3.9 inch diameter 316L stainless steel filter disk fabricated from porous sheet material having a thickness of 0.047 inches, and having 99.9% efficiency for particles of 0.7 μM size, 99.0% efficiency for particles of 0.35 μM and 90% efficiency for all particle sizes, and with a bubble point of 2.0-2.5 Hg.
The embodiments shown in FIGS. 11-13 reduce the variability rate of delivery of precursor entrained from the solid in the vessel by redirecting flow to more thoroughly sweep the volatilizing precursor from the precursor solid. By passing the carrier gas down through the separator and back up through the separator when the carrier gas is saturated with precursor, this embodiment prevents entrainment of particles or solids from any source, including the solid precursor itself. This embodiment also allows the vessel to be placed in different orientations from upright during transport and handling without having a detrimental effect on particle generation or plugging of the inlet or outlet.
While the invention has been described in detail and with reference to specific examples thereof, it will be apparent to one skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope thereof.

Claims (18)

The invention claimed is:
1. A vessel for conveying a precursor-containing fluid stream from a precursor material contained within the vessel, the vessel comprising:
an interior volume wherein the interior volume is segmented into an upper volume and a lower volume, wherein the upper volume and the lower volume are in fluid communication and the lower volume contains the precursor material;
a lid comprising a fluid inlet which directs at least one carrier gas into the interior volume of the vessel, a fluid outlet, and an internal recess wherein at least a portion of the upper volume resides within the internal recess;
a sidewall having an upper lip wherein at least a portion of the upper lip contacts the lid;
a separator interposed between the lid and the sidewall wherein the separator resides adjacent the upper lip and segments the interior volume into the upper volume and a lower volume; and
an inlet plenum, comprising a cylindrical body next to the lower surface of the lid, in fluid communication with the fluid inlet having a plenum chamber opening downwardly towards the separator wherein an inner wall of the plenum chamber and separator define a plenum interior volume and wherein an outer wall of the plenum, the separator, and the lid define a plenum exterior volume, the inlet plenum dimensioned to contact and frictionally engage an upper surface of the separator to force the at least one carrier gas to pass through the plenum interior volume and then through the separator and towards the precursor material and to preclude the at least one carrier gas from bypassing the separator and wherein the precursor-containing fluid stream passes through the separator and into the plenum exterior volume prior to passing through the fluid outlet.
2. The vessel of claim 1 wherein the inlet plenum is a part of the lid.
3. The vessel of claim 1 wherein the plenum chamber has a cylindrical shape of smaller dimension than said inlet plenum, comprising a discharge opening for the at least one carrier gas.
4. The vessel of claim 3 wherein the separator covers the entire discharge opening of the plenum chamber.
5. The vessel of claim 4 wherein the separator separates the precursor material in the lower volume from the fluid outlet.
6. The vessel of claim 1 wherein the separator comprises a filter.
7. The vessel of claim 1 wherein the fluid outlet comprises a passage that is “T” shaped at its inlet end.
8. The vessel of claim 7 wherein the inlet ends of the fluid outlet have openings at an angle in relation to the cross-section of the passage.
9. The vessel of claim 8 wherein the fluid outlet openings having an angle are positioned so that a plane formed by the angled openings is substantially tangential to an inner surface of the upper volume of the lid.
10. The vessel of claim 1 wherein the fluid inlet connects to the plenum chamber radially to the side of the inlet plenum.
11. The vessel of claim 1 wherein the fluid inlet connects to the plenum chamber axially at the center of inlet plenum.
12. A vessel for conveying a precursor-containing fluid stream from a precursor material contained within the vessel using a carrier gas, the vessel comprising:
an interior volume segmented into an upper volume and a lower volume, the upper volume being in fluid communication with the lower volume, the lower volume containing substantially all of the precursor material;
a lid having an inner wall that defines at least a portion of the upper volume;
a sidewall having an upper end comprising an upper lip and an upper opening, wherein at least a portion of the upper lip contacts the lid;
a separator located at the upper end of the sidewall, the separator being interposed between the lid and the sidewall, spanning the upper opening, and defining a border between the upper volume from the lower volume; and
a fill port that passes through the lid and is in fluid communication with the interior volume;
an inlet that passes through the lid and is in fluid communication with the interior volume, the inlet having a body that extends from the lid to the separator, the body having a lower edge defining a body opening that faces the separator, the lower edge of the body contacting and being frictionally engaged with an upper surface of the separator when the lid is fastened to the sidewall, the body and separator defining an inlet chamber located within the body and above the separator, the body, the separator and the lid defining an outlet chamber that is external to the body, within the lid and above the separator; and
an outlet that passes through the lid and is in fluid communication with the interior volume, the outlet having at least one outlet opening, each of the at least one outlet opening being located within the upper volume and within the outlet chamber.
13. The vessel of claim 12, wherein the inlet is in fluid communication with the inlet chamber.
14. The vessel of claim 12, wherein the body opening is located at a center of the lid and each of the at least one outlet opening being closer to the inner wall of the lid than the body.
15. The vessel of claim 12, wherein the lower edge of the body has a circular shape.
16. The vessel of claim 12, wherein the separator comprises a filter.
17. The vessel of claim 12, wherein the separator covers the entire body opening.
18. The vessel of claim 12, wherein the fluid inlet connects to the body radially to the side of the body.
US11/867,171 2006-10-19 2007-10-04 Solid source container with inlet plenum Active 2032-12-05 US9109287B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US11/867,171 US9109287B2 (en) 2006-10-19 2007-10-04 Solid source container with inlet plenum
JP2007271345A JP4809313B2 (en) 2006-10-19 2007-10-18 Container containing inlet plenum and method of dispensing from container
SG200717003-8A SG142265A1 (en) 2006-10-19 2007-10-18 Solid source container with inlet plenum
KR20070104956A KR100960188B1 (en) 2006-10-19 2007-10-18 Solid source container with inlet plenum
TW96139078A TWI344666B (en) 2006-10-19 2007-10-18 Solid source container with inlet plenum
CN2007101999855A CN101245445B (en) 2006-10-19 2007-10-19 Solid source container with inlet plenum

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85301406P 2006-10-19 2006-10-19
US11/867,171 US9109287B2 (en) 2006-10-19 2007-10-04 Solid source container with inlet plenum

Publications (2)

Publication Number Publication Date
US20080092816A1 US20080092816A1 (en) 2008-04-24
US9109287B2 true US9109287B2 (en) 2015-08-18

Family

ID=39316711

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/867,171 Active 2032-12-05 US9109287B2 (en) 2006-10-19 2007-10-04 Solid source container with inlet plenum

Country Status (6)

Country Link
US (1) US9109287B2 (en)
JP (1) JP4809313B2 (en)
KR (1) KR100960188B1 (en)
CN (1) CN101245445B (en)
SG (1) SG142265A1 (en)
TW (1) TWI344666B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3081668A1 (en) 2015-04-18 2016-10-19 Air Products And Chemicals, Inc. Vessel and method for delivery of precursor materials
US20170342557A1 (en) * 2014-04-21 2017-11-30 Entegris, Inc. Solid vaporizer

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
GB2432371B (en) * 2005-11-17 2011-06-15 Epichem Ltd Improved bubbler for the transportation of substances by a carrier gas
US20080241805A1 (en) * 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US9109287B2 (en) * 2006-10-19 2015-08-18 Air Products And Chemicals, Inc. Solid source container with inlet plenum
EP3922751A1 (en) 2009-11-02 2021-12-15 Sigma-Aldrich Co. LLC Solid precursor delivery assemblies and related methods
WO2011112413A1 (en) * 2010-03-10 2011-09-15 Sigma-Aldrich Co. Delivery assemblies and related methods
US20130220221A1 (en) * 2012-02-23 2013-08-29 Applied Materials, Inc. Method and apparatus for precursor delivery
US9598766B2 (en) 2012-05-27 2017-03-21 Air Products And Chemicals, Inc. Vessel with filter
KR20210135341A (en) 2012-05-31 2021-11-12 엔테그리스, 아이엔씨. Source reagent-based delivery of fluid with high material flux for batch deposition
CN107026066B (en) * 2015-06-23 2018-10-23 上海凯世通半导体股份有限公司 Feeding device, ion source device and method of feeding
MY190445A (en) 2015-08-21 2022-04-21 Flisom Ag Homogeneous linear evaporation source
TWI624554B (en) * 2015-08-21 2018-05-21 弗里松股份有限公司 Evaporation source
JP6425850B1 (en) * 2017-11-22 2018-11-21 日本エア・リキード株式会社 Solid material container and solid material product in which solid material container is filled with solid material
CN110453197B (en) * 2018-05-07 2022-04-22 北京北方华创微电子装备有限公司 Source bottle for thin film deposition apparatus and semiconductor apparatus
KR20210134226A (en) * 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
TWI759045B (en) * 2020-12-30 2022-03-21 環球晶圓股份有限公司 Antimony material heating device
EP4298262A1 (en) * 2021-02-26 2024-01-03 Entegris, Inc. Solids vaporizer

Citations (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723967A (en) * 1987-04-27 1988-02-09 Advanced Technology Materials, Inc. Valve block and container for semiconductor source reagent dispensing and/or purification
US4916828A (en) 1988-08-31 1990-04-17 Tosoh Akzo Corporation Method of producing saturated vapor of solid metal organic compounds in the metal organic chemical vapor deposition method
JPH02142524A (en) 1988-11-24 1990-05-31 Matsushita Electric Ind Co Ltd Dish washer
US4947790A (en) 1988-01-16 1990-08-14 U.S. Philips Corporation Arrangement for producing a gas flow which is enriched with the vapor of a low-volatile substance
JPH03104730A (en) 1989-09-18 1991-05-01 Mitsubishi Electric Corp Rapid heating device for vehicle
US5019423A (en) 1987-12-24 1991-05-28 Mitsui Toatsu Chemicals, Inc. Equipment and method for supply of organic metal compound
US5188808A (en) 1990-04-04 1993-02-23 Outokumpu Oy Method for mixing liquid, solids and gas and for simultaneously separating gas or gas and solids from the liquid
US5227340A (en) 1990-02-05 1993-07-13 Motorola, Inc. Process for fabricating semiconductor devices using a solid reactant source
US5232869A (en) 1991-07-30 1993-08-03 Shell Research Limited Metal deposition
US5276585A (en) 1992-11-16 1994-01-04 Thermalloy, Inc. Heat sink mounting apparatus
US5377429A (en) 1993-04-19 1995-01-03 Micron Semiconductor, Inc. Method and appartus for subliming precursors
US5381605A (en) 1993-01-08 1995-01-17 Photonics Research Incorporated Method and apparatus for delivering gas
US5562132A (en) 1993-04-28 1996-10-08 Advanced Delivery & Chemical Systems, Inc. Bulk containers for high purity chemical delivery systems
US5596817A (en) * 1992-05-21 1997-01-28 Niro Holding A/S Method and an apparatus for minimizing deposits in a drying chamber
US5674574A (en) 1996-05-20 1997-10-07 Micron Technology, Inc. Vapor delivery system for solid precursors and method regarding same
US5707424A (en) 1994-10-13 1998-01-13 Advanced Technology Materials, Inc. Process system with integrated gas storage and delivery unit
US5989305A (en) 1995-03-09 1999-11-23 Shin-Etsu Chemical Co., Ltd. Feeder of a solid organometallic compound
US6058012A (en) 1996-08-26 2000-05-02 Compaq Computer Corporation Apparatus, method and system for thermal management of an electronic system having semiconductor devices
US6077356A (en) 1996-12-17 2000-06-20 Advanced Technology Materials, Inc. Reagent supply vessel for chemical vapor deposition
US6089184A (en) 1997-06-11 2000-07-18 Tokyo Electron Limited CVD apparatus and CVD method
EP1079001A1 (en) 1999-08-20 2001-02-28 Morton International, Inc. Dual fritted bubbler
US6202591B1 (en) 1998-11-12 2001-03-20 Flex Products, Inc. Linear aperture deposition apparatus and coating process
US6244331B1 (en) 1999-10-22 2001-06-12 Intel Corporation Heatsink with integrated blower for improved heat transfer
US6270839B1 (en) 1999-08-20 2001-08-07 Pioneer Corporation Device for feeding raw material for chemical vapor phase deposition and method therefor
US20010014371A1 (en) * 1999-12-28 2001-08-16 Vaino Kilpi Apparatus for growing thin films
EP1160335A1 (en) 2000-05-31 2001-12-05 Rohm And Haas Company Leather coating composition
US20020009544A1 (en) 1999-08-20 2002-01-24 Mcfeely F. Read Delivery systems for gases for gases via the sublimation of solid precursors
US20020078894A1 (en) * 2000-05-31 2002-06-27 Shipley Company, L.L.C. Bubbler
US6424800B1 (en) 1999-09-21 2002-07-23 Samsung Electronics Co., Ltd. Bubbler
US6444038B1 (en) 1999-12-27 2002-09-03 Morton International, Inc. Dual fritted bubbler
US6470144B1 (en) 1999-06-04 2002-10-22 Mitsubishi Denki Kabushiki Kaisha Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby
US20020192370A1 (en) 1998-10-27 2002-12-19 Metzner Craig R. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6520218B1 (en) 1998-09-03 2003-02-18 Advanced Technology Materials, Inc. Container chemical guard
US20030111014A1 (en) 2001-12-18 2003-06-19 Donatucci Matthew B. Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds
US6581649B2 (en) 2001-07-13 2003-06-24 L'air Liquide - Societe Anonyme A'directiore Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Methods and apparatus for delivering high purity liquids with low vapor pressure
US20030121608A1 (en) 2001-10-26 2003-07-03 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
JP2003318170A (en) 2002-04-26 2003-11-07 Japan Pionics Co Ltd Vaporizer
US20030209201A1 (en) 2002-05-13 2003-11-13 Japan Pionics Co., Ltd. Vaporizer and apparatus for vaporizing and supplying
US20040013577A1 (en) * 2002-07-17 2004-01-22 Seshadri Ganguli Method and apparatus for providing gas to a processing chamber
US20040016404A1 (en) 2002-07-23 2004-01-29 John Gregg Vaporizer delivery ampoule
US20040025370A1 (en) 2002-07-29 2004-02-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US6718126B2 (en) 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US20040083963A1 (en) 2002-08-19 2004-05-06 Dando Ross S. Method and apparatus for delivering precursors
US20040083965A1 (en) 2002-11-06 2004-05-06 Luping Wang Vapor delivery system for solid precursors and method of using same
US20050006799A1 (en) 2002-07-23 2005-01-13 Gregg John N. Method and apparatus to help promote contact of gas with vaporized material
EP1508631A1 (en) 2003-08-19 2005-02-23 Air Products And Chemicals, Inc. Method and apparatus for the delivery of precursor materials
US20050066893A1 (en) * 2003-09-29 2005-03-31 Soininen Pekka T. Safe liquid source containers
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
GB2420123A (en) 2004-08-20 2006-05-17 Rohm & Haas Elect Mat Vapour phase delivery apparatus utilising frit of solid organo-metallic precusor
US20080085226A1 (en) * 2006-10-10 2008-04-10 Asm America, Inc. Precursor delivery system
US20080092816A1 (en) * 2006-10-19 2008-04-24 Air Products And Chemicals, Inc. Solid Source Container With Inlet Plenum
US20090087545A1 (en) * 2005-09-20 2009-04-02 Tadahiro Ohmi Film Forming Apparatus, Evaporating Jig, and Measurement Method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02142524U (en) * 1989-04-28 1990-12-04
JPH03104730U (en) * 1990-02-13 1991-10-30
US7077388B2 (en) * 2002-07-19 2006-07-18 Asm America, Inc. Bubbler for substrate processing
JP4021721B2 (en) 2002-07-30 2007-12-12 アプライド マテリアルズ インコーポレイテッド Liquid supply structure
JP5342110B2 (en) * 2003-05-27 2013-11-13 アプライド マテリアルズ インコーポレイテッド Source canister containing precursor and method for filling features using the same

Patent Citations (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723967A (en) * 1987-04-27 1988-02-09 Advanced Technology Materials, Inc. Valve block and container for semiconductor source reagent dispensing and/or purification
US5019423A (en) 1987-12-24 1991-05-28 Mitsui Toatsu Chemicals, Inc. Equipment and method for supply of organic metal compound
US4947790A (en) 1988-01-16 1990-08-14 U.S. Philips Corporation Arrangement for producing a gas flow which is enriched with the vapor of a low-volatile substance
US4916828A (en) 1988-08-31 1990-04-17 Tosoh Akzo Corporation Method of producing saturated vapor of solid metal organic compounds in the metal organic chemical vapor deposition method
JPH02142524A (en) 1988-11-24 1990-05-31 Matsushita Electric Ind Co Ltd Dish washer
JPH03104730A (en) 1989-09-18 1991-05-01 Mitsubishi Electric Corp Rapid heating device for vehicle
US5227340A (en) 1990-02-05 1993-07-13 Motorola, Inc. Process for fabricating semiconductor devices using a solid reactant source
US5188808A (en) 1990-04-04 1993-02-23 Outokumpu Oy Method for mixing liquid, solids and gas and for simultaneously separating gas or gas and solids from the liquid
US5232869A (en) 1991-07-30 1993-08-03 Shell Research Limited Metal deposition
US5596817A (en) * 1992-05-21 1997-01-28 Niro Holding A/S Method and an apparatus for minimizing deposits in a drying chamber
US5276585A (en) 1992-11-16 1994-01-04 Thermalloy, Inc. Heat sink mounting apparatus
US5381605A (en) 1993-01-08 1995-01-17 Photonics Research Incorporated Method and apparatus for delivering gas
US5377429A (en) 1993-04-19 1995-01-03 Micron Semiconductor, Inc. Method and appartus for subliming precursors
US5562132A (en) 1993-04-28 1996-10-08 Advanced Delivery & Chemical Systems, Inc. Bulk containers for high purity chemical delivery systems
US5707424A (en) 1994-10-13 1998-01-13 Advanced Technology Materials, Inc. Process system with integrated gas storage and delivery unit
US5989305A (en) 1995-03-09 1999-11-23 Shin-Etsu Chemical Co., Ltd. Feeder of a solid organometallic compound
US5674574A (en) 1996-05-20 1997-10-07 Micron Technology, Inc. Vapor delivery system for solid precursors and method regarding same
US6058012A (en) 1996-08-26 2000-05-02 Compaq Computer Corporation Apparatus, method and system for thermal management of an electronic system having semiconductor devices
US6077356A (en) 1996-12-17 2000-06-20 Advanced Technology Materials, Inc. Reagent supply vessel for chemical vapor deposition
US6089184A (en) 1997-06-11 2000-07-18 Tokyo Electron Limited CVD apparatus and CVD method
US6520218B1 (en) 1998-09-03 2003-02-18 Advanced Technology Materials, Inc. Container chemical guard
US20020192370A1 (en) 1998-10-27 2002-12-19 Metzner Craig R. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6202591B1 (en) 1998-11-12 2001-03-20 Flex Products, Inc. Linear aperture deposition apparatus and coating process
US6470144B1 (en) 1999-06-04 2002-10-22 Mitsubishi Denki Kabushiki Kaisha Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby
US6270839B1 (en) 1999-08-20 2001-08-07 Pioneer Corporation Device for feeding raw material for chemical vapor phase deposition and method therefor
US20020009544A1 (en) 1999-08-20 2002-01-24 Mcfeely F. Read Delivery systems for gases for gases via the sublimation of solid precursors
EP1079001A1 (en) 1999-08-20 2001-02-28 Morton International, Inc. Dual fritted bubbler
US6424800B1 (en) 1999-09-21 2002-07-23 Samsung Electronics Co., Ltd. Bubbler
US6244331B1 (en) 1999-10-22 2001-06-12 Intel Corporation Heatsink with integrated blower for improved heat transfer
US6444038B1 (en) 1999-12-27 2002-09-03 Morton International, Inc. Dual fritted bubbler
US20010014371A1 (en) * 1999-12-28 2001-08-16 Vaino Kilpi Apparatus for growing thin films
EP1160335A1 (en) 2000-05-31 2001-12-05 Rohm And Haas Company Leather coating composition
US20020078894A1 (en) * 2000-05-31 2002-06-27 Shipley Company, L.L.C. Bubbler
US6581649B2 (en) 2001-07-13 2003-06-24 L'air Liquide - Societe Anonyme A'directiore Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Methods and apparatus for delivering high purity liquids with low vapor pressure
US6718126B2 (en) 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US20030121608A1 (en) 2001-10-26 2003-07-03 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20030111014A1 (en) 2001-12-18 2003-06-19 Donatucci Matthew B. Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds
WO2003052160A1 (en) 2001-12-18 2003-06-26 Advanced Technology Materials, Inc. Vaporiser/delivery vessel for volatile/thermally sensitive solid and liquid compounds
JP2003318170A (en) 2002-04-26 2003-11-07 Japan Pionics Co Ltd Vaporizer
JP2003332243A (en) 2002-05-13 2003-11-21 Japan Pionics Co Ltd Vaporizer and vapor feeding apparatus
US20030209201A1 (en) 2002-05-13 2003-11-13 Japan Pionics Co., Ltd. Vaporizer and apparatus for vaporizing and supplying
US7036801B2 (en) 2002-05-13 2006-05-02 Japan Pionics Co., Ltd. Vaporizer and apparatus for vaporizing and supplying
US20040013577A1 (en) * 2002-07-17 2004-01-22 Seshadri Ganguli Method and apparatus for providing gas to a processing chamber
US6905541B2 (en) 2002-07-17 2005-06-14 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US20050189072A1 (en) 2002-07-17 2005-09-01 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US20040016404A1 (en) 2002-07-23 2004-01-29 John Gregg Vaporizer delivery ampoule
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US20050006799A1 (en) 2002-07-23 2005-01-13 Gregg John N. Method and apparatus to help promote contact of gas with vaporized material
US20040025370A1 (en) 2002-07-29 2004-02-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US20040083963A1 (en) 2002-08-19 2004-05-06 Dando Ross S. Method and apparatus for delivering precursors
US6797337B2 (en) 2002-08-19 2004-09-28 Micron Technology, Inc. Method for delivering precursors
US6740586B1 (en) 2002-11-06 2004-05-25 Advanced Technology Materials, Inc. Vapor delivery system for solid precursors and method of using same
US20040083965A1 (en) 2002-11-06 2004-05-06 Luping Wang Vapor delivery system for solid precursors and method of using same
JP2005101564A (en) 2003-08-19 2005-04-14 Air Products & Chemicals Inc Method for supplying precursor substance and container
CN1611636A (en) 2003-08-19 2005-05-04 气体产品与化学公司 Method and apparatus for the delivery of precursor materials
EP1508631A1 (en) 2003-08-19 2005-02-23 Air Products And Chemicals, Inc. Method and apparatus for the delivery of precursor materials
US20050039794A1 (en) * 2003-08-19 2005-02-24 Birtcher Charles Michael Method and vessel for the delivery of precursor materials
US20050066893A1 (en) * 2003-09-29 2005-03-31 Soininen Pekka T. Safe liquid source containers
GB2420123A (en) 2004-08-20 2006-05-17 Rohm & Haas Elect Mat Vapour phase delivery apparatus utilising frit of solid organo-metallic precusor
US20090087545A1 (en) * 2005-09-20 2009-04-02 Tadahiro Ohmi Film Forming Apparatus, Evaporating Jig, and Measurement Method
US20080085226A1 (en) * 2006-10-10 2008-04-10 Asm America, Inc. Precursor delivery system
US20080092816A1 (en) * 2006-10-19 2008-04-24 Air Products And Chemicals, Inc. Solid Source Container With Inlet Plenum

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170342557A1 (en) * 2014-04-21 2017-11-30 Entegris, Inc. Solid vaporizer
US10392700B2 (en) * 2014-04-21 2019-08-27 Entegris, Inc. Solid vaporizer
EP3081668A1 (en) 2015-04-18 2016-10-19 Air Products And Chemicals, Inc. Vessel and method for delivery of precursor materials

Also Published As

Publication number Publication date
CN101245445A (en) 2008-08-20
JP2008112994A (en) 2008-05-15
SG142265A1 (en) 2008-05-28
CN101245445B (en) 2012-07-04
KR100960188B1 (en) 2010-05-27
TW200820317A (en) 2008-05-01
TWI344666B (en) 2011-07-01
KR20080035482A (en) 2008-04-23
JP4809313B2 (en) 2011-11-09
US20080092816A1 (en) 2008-04-24

Similar Documents

Publication Publication Date Title
US9109287B2 (en) Solid source container with inlet plenum
US7261118B2 (en) Method and vessel for the delivery of precursor materials
US20170137936A1 (en) Vessel With Filter
EP3081668B1 (en) Vessel and method for delivery of precursor materials
WO2007109410A2 (en) Method and apparatus for reducing particle contamination in a deposition system
EP2108617A1 (en) Reagent dispensing apparatus
EP2108616B1 (en) Delivery method for a reagent using a reagent dispensing apparatus

Legal Events

Date Code Title Description
AS Assignment

Owner name: AIR PRODUCTS AND CHEMICALS, INC., PENNSYLVANIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BIRTCHER, CHARLES MICHAEL;STEIDL, THOMAS ANDREW;REEL/FRAME:020021/0183

Effective date: 20071015

STCF Information on status: patent grant

Free format text: PATENTED CASE

AS Assignment

Owner name: CITIBANK, N.A., AS COLLATERAL AGENT, DELAWARE

Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:VERSUM MATERIALS US, LLC;REEL/FRAME:040503/0442

Effective date: 20160930

AS Assignment

Owner name: VERSUM MATERIALS US, LLC, ARIZONA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AIR PRODUCTS AND CHEMICALS, INC.;REEL/FRAME:041772/0733

Effective date: 20170214

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4

AS Assignment

Owner name: VERSUM MATERIALS US, LLC, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:CITIBANK, N.A., AS AGENT;REEL/FRAME:050647/0001

Effective date: 20191007

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8