USB339699I5 - - Google Patents
Info
- Publication number
- USB339699I5 USB339699I5 US33969973A USB339699I5 US B339699 I5 USB339699 I5 US B339699I5 US 33969973 A US33969973 A US 33969973A US B339699 I5 USB339699 I5 US B339699I5
- Authority
- US
- United States
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/339,699 US3933527A (en) | 1973-03-09 | 1973-03-09 | Fine tuning power diodes with irradiation |
CA193,134A CA1000417A (en) | 1973-03-09 | 1974-02-21 | Fine tuning power diodes with irradiation |
GB881774A GB1467173A (en) | 1973-03-09 | 1974-02-27 | Semiconductor diodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/339,699 US3933527A (en) | 1973-03-09 | 1973-03-09 | Fine tuning power diodes with irradiation |
Publications (2)
Publication Number | Publication Date |
---|---|
USB339699I5 true USB339699I5 (en) | 1975-01-28 |
US3933527A US3933527A (en) | 1976-01-20 |
Family
ID=23330215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/339,699 Expired - Lifetime US3933527A (en) | 1973-03-09 | 1973-03-09 | Fine tuning power diodes with irradiation |
Country Status (3)
Country | Link |
---|---|
US (1) | US3933527A (en) |
CA (1) | CA1000417A (en) |
GB (1) | GB1467173A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2344962A1 (en) * | 1976-03-17 | 1977-10-14 | Westinghouse Electric Corp | PROCESS FOR REDUCING THE SWITCHING TIME OF SEMICONDUCTOR COMPONENTS AND COMPONENTS OBTAINED |
FR2361743A1 (en) * | 1976-05-17 | 1978-03-10 | Westinghouse Electric Corp | ADAPTATION OF THE RECOVERY CHARGE IN THYRISTORS AND POWER DIODES BY IRRADIATION |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4043837A (en) * | 1975-01-10 | 1977-08-23 | Westinghouse Electric Corporation | Low forward voltage drop thyristor |
JPS5819125B2 (en) * | 1976-08-11 | 1983-04-16 | 株式会社日立製作所 | Manufacturing method of semiconductor device |
JPS5395581A (en) * | 1977-02-02 | 1978-08-21 | Hitachi Ltd | Manufacture for semiconductor device |
US4137099A (en) * | 1977-07-11 | 1979-01-30 | General Electric Company | Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments |
US4134778A (en) * | 1977-09-02 | 1979-01-16 | General Electric Company | Selective irradiation of thyristors |
US4138280A (en) * | 1978-02-02 | 1979-02-06 | International Rectifier Corporation | Method of manufacture of zener diodes |
US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
US4291329A (en) * | 1979-08-31 | 1981-09-22 | Westinghouse Electric Corp. | Thyristor with continuous recombination center shunt across planar emitter-base junction |
IN153170B (en) * | 1980-07-24 | 1984-06-09 | Westinghouse Electric Corp | |
US4972094A (en) * | 1988-01-20 | 1990-11-20 | Marks Alvin M | Lighting devices with quantum electric/light power converters |
EP0398120B1 (en) * | 1989-05-18 | 1993-10-13 | Asea Brown Boveri Ag | Semiconductor device |
US6107106A (en) * | 1998-02-05 | 2000-08-22 | Sony Corporation | Localized control of integrated circuit parameters using focus ion beam irradiation |
WO2002017371A1 (en) * | 2000-08-24 | 2002-02-28 | Toyoda Gosei Co., Ltd. | Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2911533A (en) * | 1957-12-24 | 1959-11-03 | Arthur C Damask | Electron irradiation of solids |
US3272661A (en) * | 1962-07-23 | 1966-09-13 | Hitachi Ltd | Manufacturing method of a semi-conductor device by controlling the recombination velocity |
US3533857A (en) * | 1967-11-29 | 1970-10-13 | Hughes Aircraft Co | Method of restoring crystals damaged by irradiation |
US3736192A (en) * | 1968-12-04 | 1973-05-29 | Hitachi Ltd | Integrated circuit and method of making the same |
-
1973
- 1973-03-09 US US05/339,699 patent/US3933527A/en not_active Expired - Lifetime
-
1974
- 1974-02-21 CA CA193,134A patent/CA1000417A/en not_active Expired
- 1974-02-27 GB GB881774A patent/GB1467173A/en not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2911533A (en) * | 1957-12-24 | 1959-11-03 | Arthur C Damask | Electron irradiation of solids |
US3272661A (en) * | 1962-07-23 | 1966-09-13 | Hitachi Ltd | Manufacturing method of a semi-conductor device by controlling the recombination velocity |
US3533857A (en) * | 1967-11-29 | 1970-10-13 | Hughes Aircraft Co | Method of restoring crystals damaged by irradiation |
US3736192A (en) * | 1968-12-04 | 1973-05-29 | Hitachi Ltd | Integrated circuit and method of making the same |
Non-Patent Citations (1)
Title |
---|
Clark et al., "Isochronal Annealing of P and N-Type Silicon Irradiated at 80grad K", Phil. Mag., Nov. 1969, 20 (167), pp. 951, 958 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2344962A1 (en) * | 1976-03-17 | 1977-10-14 | Westinghouse Electric Corp | PROCESS FOR REDUCING THE SWITCHING TIME OF SEMICONDUCTOR COMPONENTS AND COMPONENTS OBTAINED |
FR2361743A1 (en) * | 1976-05-17 | 1978-03-10 | Westinghouse Electric Corp | ADAPTATION OF THE RECOVERY CHARGE IN THYRISTORS AND POWER DIODES BY IRRADIATION |
Also Published As
Publication number | Publication date |
---|---|
US3933527A (en) | 1976-01-20 |
CA1000417A (en) | 1976-11-23 |
GB1467173A (en) | 1977-03-16 |