USB339699I5 - - Google Patents

Info

Publication number
USB339699I5
USB339699I5 US33969973A USB339699I5 US B339699 I5 USB339699 I5 US B339699I5 US 33969973 A US33969973 A US 33969973A US B339699 I5 USB339699 I5 US B339699I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US05/339,699 priority Critical patent/US3933527A/en
Priority to CA193,134A priority patent/CA1000417A/en
Priority to GB881774A priority patent/GB1467173A/en
Publication of USB339699I5 publication Critical patent/USB339699I5/en
Application granted granted Critical
Publication of US3933527A publication Critical patent/US3933527A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
US05/339,699 1973-03-09 1973-03-09 Fine tuning power diodes with irradiation Expired - Lifetime US3933527A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US05/339,699 US3933527A (en) 1973-03-09 1973-03-09 Fine tuning power diodes with irradiation
CA193,134A CA1000417A (en) 1973-03-09 1974-02-21 Fine tuning power diodes with irradiation
GB881774A GB1467173A (en) 1973-03-09 1974-02-27 Semiconductor diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/339,699 US3933527A (en) 1973-03-09 1973-03-09 Fine tuning power diodes with irradiation

Publications (2)

Publication Number Publication Date
USB339699I5 true USB339699I5 (en) 1975-01-28
US3933527A US3933527A (en) 1976-01-20

Family

ID=23330215

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/339,699 Expired - Lifetime US3933527A (en) 1973-03-09 1973-03-09 Fine tuning power diodes with irradiation

Country Status (3)

Country Link
US (1) US3933527A (en)
CA (1) CA1000417A (en)
GB (1) GB1467173A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2344962A1 (en) * 1976-03-17 1977-10-14 Westinghouse Electric Corp PROCESS FOR REDUCING THE SWITCHING TIME OF SEMICONDUCTOR COMPONENTS AND COMPONENTS OBTAINED
FR2361743A1 (en) * 1976-05-17 1978-03-10 Westinghouse Electric Corp ADAPTATION OF THE RECOVERY CHARGE IN THYRISTORS AND POWER DIODES BY IRRADIATION

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4043837A (en) * 1975-01-10 1977-08-23 Westinghouse Electric Corporation Low forward voltage drop thyristor
JPS5819125B2 (en) * 1976-08-11 1983-04-16 株式会社日立製作所 Manufacturing method of semiconductor device
JPS5395581A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Manufacture for semiconductor device
US4137099A (en) * 1977-07-11 1979-01-30 General Electric Company Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments
US4134778A (en) * 1977-09-02 1979-01-16 General Electric Company Selective irradiation of thyristors
US4138280A (en) * 1978-02-02 1979-02-06 International Rectifier Corporation Method of manufacture of zener diodes
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4291329A (en) * 1979-08-31 1981-09-22 Westinghouse Electric Corp. Thyristor with continuous recombination center shunt across planar emitter-base junction
IN153170B (en) * 1980-07-24 1984-06-09 Westinghouse Electric Corp
US4972094A (en) * 1988-01-20 1990-11-20 Marks Alvin M Lighting devices with quantum electric/light power converters
EP0398120B1 (en) * 1989-05-18 1993-10-13 Asea Brown Boveri Ag Semiconductor device
US6107106A (en) * 1998-02-05 2000-08-22 Sony Corporation Localized control of integrated circuit parameters using focus ion beam irradiation
WO2002017371A1 (en) * 2000-08-24 2002-02-28 Toyoda Gosei Co., Ltd. Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2911533A (en) * 1957-12-24 1959-11-03 Arthur C Damask Electron irradiation of solids
US3272661A (en) * 1962-07-23 1966-09-13 Hitachi Ltd Manufacturing method of a semi-conductor device by controlling the recombination velocity
US3533857A (en) * 1967-11-29 1970-10-13 Hughes Aircraft Co Method of restoring crystals damaged by irradiation
US3736192A (en) * 1968-12-04 1973-05-29 Hitachi Ltd Integrated circuit and method of making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2911533A (en) * 1957-12-24 1959-11-03 Arthur C Damask Electron irradiation of solids
US3272661A (en) * 1962-07-23 1966-09-13 Hitachi Ltd Manufacturing method of a semi-conductor device by controlling the recombination velocity
US3533857A (en) * 1967-11-29 1970-10-13 Hughes Aircraft Co Method of restoring crystals damaged by irradiation
US3736192A (en) * 1968-12-04 1973-05-29 Hitachi Ltd Integrated circuit and method of making the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Clark et al., "Isochronal Annealing of P and N-Type Silicon Irradiated at 80grad K", Phil. Mag., Nov. 1969, 20 (167), pp. 951, 958 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2344962A1 (en) * 1976-03-17 1977-10-14 Westinghouse Electric Corp PROCESS FOR REDUCING THE SWITCHING TIME OF SEMICONDUCTOR COMPONENTS AND COMPONENTS OBTAINED
FR2361743A1 (en) * 1976-05-17 1978-03-10 Westinghouse Electric Corp ADAPTATION OF THE RECOVERY CHARGE IN THYRISTORS AND POWER DIODES BY IRRADIATION

Also Published As

Publication number Publication date
GB1467173A (en) 1977-03-16
CA1000417A (en) 1976-11-23
US3933527A (en) 1976-01-20

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