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Patente

VeröffentlichungsnummerUSD449308 S1
PublikationstypErteilung
Anmeldenummer29/114,441
Veröffentlichungsdatum16. Okt. 2001
Eingetragen26. Nov. 1999
Prioritätsdatum
26. Nov. 1999
Auch veröffentlicht unter
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Partially transparent IC card
US D449308 S1
Zeichnungen(4)
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Ansprüche
  1. The ornamental design for partially transparent IC card, as shown and described.

Beschreibung

FIG. 1 is a enlarged top, front and right side perspective view of partially transparent IC card showing our new design;

FIG. 2 is a top plan view thereof;

FIG. 3 is a front elevational view thereof;

FIG. 4 is a rear elevational view thereof;

FIG. 5 is a right side elevational view thereof;

FIG. 6 is a left side elevational view thereof;

FIG. 7 is a bottom plan view thereof; and,

FIG. 8 is a greatly enlarged cross-sectional view thereof taken along line 8—8 in FIG. 2.

The phantom line showing in the drawings is for illustrative purposes only and forms no part of the claimed design.

Nichtpatentzitate
Referenz
1Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS 128 Mbit (16M×8bit) CMOS NAND E2PROM (16M Byte SmartMedia™), Toshiba, Nov. 6, 1998.
2Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS 64 Mbit (8M×8bit) CMOS NAND E2PROM (8M byte SmartMedia™), Toshiba, Nov. 6, 1998.