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  1. Erweiterte Patentsuche
VeröffentlichungsnummerUSD794642 S1
AnmeldenummerUS 29/553,619
Veröffentlichungsdatum15. Aug. 2017
Eingetragen3. Febr. 2016
Prioritätsdatum7. Jan. 2009
Veröffentlichungsnummer29553619, 553619, US D794642 S1, US D794642S1, US-S1-D794642, USD794642 S1, USD794642S1
ErfinderHyo-Jae Bang, Do-Geun Kim, Hong-Kyun Kim, Young-bok JEON
Ursprünglich BevollmächtigterSamsung Electronics Co., Ltd.
Zitat exportierenBiBTeX, EndNote, RefMan
Externe Links: USPTO, USPTO-Zuordnung, Espacenet
Memory device
US D794642 S1
Zusammenfassung  auf verfügbar
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  1. The ornamental design for a memory device, as shown and described.

FIG. 1 is a perspective view of a memory device showing our new design; and,

FIG. 2 is a top plan view thereof.

The broken lines and unshaded portions contained within broken lines throughout the drawings, depict exemplary parts of the memory device that are shown for illustrative purposes only, and do not form part of the design claim.

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