USRE37427E1 - Dynamic type memory - Google Patents

Dynamic type memory Download PDF

Info

Publication number
USRE37427E1
USRE37427E1 US09/493,001 US49300100A USRE37427E US RE37427 E1 USRE37427 E1 US RE37427E1 US 49300100 A US49300100 A US 49300100A US RE37427 E USRE37427 E US RE37427E
Authority
US
United States
Prior art keywords
those
sub arrays
sub
data lines
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US09/493,001
Inventor
Masaki Ogihara
Satoru Takase
Kiyofumi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to US09/493,001 priority Critical patent/USRE37427E1/en
Application granted granted Critical
Publication of USRE37427E1 publication Critical patent/USRE37427E1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G11C7/1012Data reordering during input/output, e.g. crossbars, layers of multiplexers, shifting or rotating
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4093Input/output [I/O] data interface arrangements, e.g. data buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Definitions

  • the present invention relates to a semiconductor memory device and, more specifically, to a dynamic type memory or a dynamic RAM (DRAM) capable of transferring data at high speed through an input/output path.
  • DRAM dynamic RAM
  • a divided cell array operating system is employed wherein a memory cell array is divided into a plurality of cell arrays (sub arrays) and some of the cell arrays are operated at the same time.
  • This system makes it possible to reduce a charge/discharge current of bit lines which occupies a large part of the consumed current in an operation of rows.
  • the number of sub arrays has a close relation to the operation speed of the memory. If each sub array is large in size, the capacity of word lines is increased too much and thus the rise and fall speeds of the word lines are decreased.
  • bit lines Since the capacity of bit lines is also increased too much, a difference in potential between a pair of bit lines is lessened, and the speed at which the potential difference is amplified by a sense amplifier becomes slow, with the result that the operation speed of the entire memory is decreased. For this reason, as the memory is miniaturized and its capacity is increased, the number of sub arrays is likely to increase in order to reduce the charge/discharge current of the bit lines and then prevent the operation speed of the entire memory from lowering.
  • the semiconductor chip of a conventional versatile DRAM is applicable to a variety of bit configurations such as 1-bit, 4-bit, 8-bit, and 16-bit configurations and various types of packaging such as DIP, SOJ, TSOP and ZIP.
  • a DQ buffer 43 for amplifying data of a data line 42 is provided in the vicinity of each of sub arrays 41 on the semiconductor chip, data of all the DQ buffers 43 are concentrated in a single multiplexer 44 arranged on the chip (in the center of the chip in FIG. 4 ), and data having a bit configuration is supplied from the multiplexer to an I/O pad 45 of its corresponding packaging.
  • a vertical surface mounting package capable of being vertically mounted on a memory mounting printed circuit board
  • the lead frame in the package and the wires on the circuit board are shortened to increase in data transfer speed and, at the same time, to improve in data transfer rate by adopting a multi-bit configuration such as 8-bit and 16-bit configurations.
  • a dynamic RAM (DRAM) is achieved at low cost as a memory which is employed in bulk in a computer system.
  • the operation speed of a microprocessor (MPU) is remarkably improved and thus becomes higher and higher than that of the DRAM.
  • the improvement in speed of data transfer between the MPU and DRAM is an important factor in increasing the processing speed of the total computer system.
  • Various improvements have been made to increase the data transfer speed, and a typical one of them is to adopt a high-speed memory or a cache memory.
  • the memory which is interposed between the MPU and the main memory to shorten the difference between the cycle time of the MPU and the access time of the main memory, improves in efficiency in use of the MPU.
  • the cache memory there are a static RAM (SRAM) of a chip separated from both a MPU chip and a DRAM chip, an SRAM called an on-chip cache memory or an embedded memory mounted on an MPU chip (an MPU chip mounted with a cache memory may have an SRAM cache memory of another chip), and an SRAM cell mounted on a DRAM chip.
  • SRAM static RAM
  • Japanese Patent Application No. 4-131095 the applicant of which is the same as that of the present application, proposes a DRAM wherein a memory region is divided into a plurality of sub arrays, the sub arrays are operated independently of one another, and sense amplifiers of bit lines are employed as cache memories, thereby enhancing the hit rate of the cache memories.
  • a cache memory system using sense amplifiers will now be described in brief. Assume that a DRAM stands by for access from an MPU and, in this case, data read out from memory cells of a row address is latched in the sense amplifiers.
  • the data can be output only by the operation of columns without that of rows, and access time necessary for the operation of rows can be shortened accordingly.
  • the average access time of the system is lengthened. To increase the hit rate is therefore important for shortening the average access time of the system.
  • the sense amplifiers which stand by for access while latching data, are increased in number.
  • a large-capacity memory performs partial activation of activating some of sub arrays at the same time and, in this case, no data is usually held in the sense amplifiers related to the sub arrays in which an operation of rows is not performed. If, however, these sense amplifiers are caused to latch data, the sense amplifiers standing by for access while latching data, can be increased in number, as can be the capacity of the cache memories, thereby enhancing the hit rate.
  • sense amplifiers are divided into a plurality of banks.
  • the sense amplifiers related to a plurality of sub arrays operate simultaneously to perform sensing, latching, and equalizing operations at the same timing, while the sense amplifiers related to the sub arrays in which an operation of rows is not performed, as described above, are allowed to stand by while latching data.
  • the simultaneously-operating sense amplifiers are called banks. In order to divide the sense amplifiers into banks for the purpose of increasing the hit rate of the cache memories, the following conditions are required:
  • Each bank has independent sense amplifiers.
  • Each bank includes data paths corresponding to all I/O pads since a specific bank is accessed to access a certain cache memory, whereas in a multi-bit DRAM, data has to be supplied from the accessed bank to the I/O pads at the same timing.
  • the conventional DRAM described above has the problem in which, since data of all the sub arrays, which tend to increase in size, are concentrated on the chip, the data paths formed in the chip are lengthened to prevent data from being transferred at high speed.
  • the present invention has been developed in order to resolve the above problem and its object is to provide a dynamic type memory capable of increasing the speed of data transfer by shortening data paths formed in a chip and enhancing the hit rate of a cache memory when a cache memory system using sense amplifiers is adopted.
  • a dynamic type memory comprising:
  • a memory cell array formed on a semiconductor chip having a first edge and a second edge perpendicular to the first edge;
  • each of the plurality of sub arrays having a plurality of memory cells arranged in matrix;
  • each of the plurality of word lines being connected to those of the memory cells which are in a row;
  • each of the plurality of bit lines being connected to those of the memory cells which are in a column;
  • a plurality of sense amplifiers formed on the semiconductor memory chip for each of the plurality of sub arrays and connected to the plurality of bit lines, each for sensing and amplifying a potential read out from a memory cell when a corresponding bit line is selected;
  • each of the plurality of data lines being connected to the sense amplifiers of a corresponding sub array, for transferring data sensed and amplified by a sense amplifier the bit line connected to which is selected;
  • each of the plurality of data buffer and multiplexer circuits being connected to one of the sub arrays of each of the banks;
  • the input/output pads being in an arrangement in the second direction on the semiconductor memory chip, the arrangement being, closer to the second edge of the semiconductor memory chip than the data buffer and multiplexer circuits.
  • All the data lines are formed in parallel with the word lines, and the data buffer and multiplexer circuits and input/output pads are arranged locally on one side of the memory chip in parallel with the bit lines.
  • One data buffer and multiplexer circuit is connected to the data lines of a sub array of each of the banks, and each of the banks has data paths connected to the input/output pads. Therefore, when a sense amplifier cache memory system using the sense amplifiers as cache memories is adopted, data of the banks can be multiplexed and the hit rate of the cache memories can be increased.
  • Each of the banks may comprise those of the sub arrays which are grouped in the second direction.
  • Each of the banks may comprise those of the sub arrays which are grouped in the first direction.
  • those of the data lines which are provided for those of the sub arrays which are far from the input/output pads are over those of the sub arrays which are near to the input/output pads.
  • those of the data lines which are provided for those of the sub arrays which are far from the input/output pads are close to those of the sub arrays which are near to the input/output pads.
  • a size of those of the data lines which are provided for those of the sub arrays which are far from the input/output pads is larger than that of those of the data lines which are provided for those of the sub arrays which are near to the input/output pads.
  • FIG. 1 is a view of the arrangement of sub arrays, DQ buffer and multiplexer circuits and I/O pads in a chip of a DRAM according to a first embodiment of the present invention
  • FIG. 2 is a circuit diagram showing part of the arrangement of FIG. 1 including one sub array, one DQ buffer and multiplexer circuit and one I/O pad;
  • FIG. 3 is a view of the arrangement of sub arrays, DQ buffer and multiplexer circuits and I/O pads in a chip of a DRAM according to a second embodiment of the present invention
  • FIG. 4 is a view of the arrangement of sub arrays, DQ buffers, a multiplexer and I/O pads in a chip of a conventional versatile DRAM;
  • FIG. 5 is a partial pattern view of the arrangement shown in FIG. 1 .
  • FIG. 1 shows an example of the arrangement of sub arrays 11 , DQ buffer and multiplexer circuits 12 and I/O pads 13 in a DRAM chip according to a first embodiment of the present invention
  • FIG. 2 specifically shows part of the arrangement of FIG. 1 including one sub array 11 , one DQ buffer and multiplexer circuit 12 and one I/O pad 13 .
  • Each of the sub arrays 11 shown in FIG. 1 includes dynamic type memory cells MC (FIG. 2) arranged in matrix on a memory chip 10 in the first and second directions X and Y perpendicular to each other.
  • the sub arrays 11 are grouped into a plurality of banks and the operations of the sub arrays 11 are controlled for each of the banks.
  • the groups of sub arrays 11 are arranged in the first direction X, and the total of groups comes to two.
  • each of the groups includes such arrays 11 arranged in a line in the second direction Y and corresponds to one bank.
  • the word lines WLi are selected by a row decoder 21
  • the bit lines BLi and ⁇ overscore (BLi) ⁇ are selected by a column selection circuit 23 selected by a column decoder 21 .
  • Each of the sub arrays also includes a plurality of sense amplifiers 24 for amplifying the potentials read out from the memory cells MC on a row selected by the row decoder 21 .
  • Each of the DQ buffer and multiplexer circuits 12 is connected to the pairs of data lines DQi and ⁇ overscore (DQi) ⁇ of a corresponding sub array 11 of each of the banks to amplify data supplied through the pairs of data lines.
  • the DQ buffer and multiplexer circuits 12 are arranged in the second direction Y.
  • Each of the I/O pads 13 is connected to its corresponding one of the DQ buffer and multiplexer circuits 12 , and these pads are arranged in the second direction Y and nearer to the edge of the memory chip than the buffer and multiplexer circuits 12 are.
  • a multiplexer of each of the DQ buffer and multiplexer circuits 12 includes switching elements (e.g., MOS transistors 25 ) corresponding to the data lines DQi and ⁇ overscore (DQi) ⁇ of the different banks, and each of the switching elements is connected in series between its corresponding data line and I/O pad 13 , as is illustrated in FIG. 2 . Consequently, data can be input/output to/from the different banks by the DQ buffer and multiplexer circuits 12 .
  • switching elements e.g., MOS transistors 25
  • the data lines (DQ 1 , DQ 3 , . . . in FIG. 1) connected to the sub arrays of one bank located far from the I/O pads 13 are longer than those (DQ 2 , DQ 4 , . . . in FIG. 1) connected to the sub arrays of the other bank located near to the I/O pads 13 .
  • the wiring resistance of the longer data lines has to be prevented from increasing. It is thus desirable to make the longer data lines wider than the shorter data lines.
  • FIG. 5 is a partial pattern view in which the data line DQ 1 extending from the far located bank and the data line DQ 2 extending from the near located bank are formed on an insulation film.
  • the data line DQ 1 extending from the far located bank passes over the sense amplifier region of the sub array of the near located bank.
  • all the data lines DQi and ⁇ overscore (DQi) ⁇ are formed in parallel with the word lines WLi, and the DQ buffer and multiplexers 12 and I/O pads 13 are arranged on one side of the memory chip 10 .
  • the data lines DQi, ⁇ overscore (DQi) ⁇ , DQ buffer and multiplexer circuits 12 and I/O pads 13 are arranged with efficiency, the data paths formed in the chip 10 are shortened, as are the lead frame in the package and the wires on the circuit board, with the result that data can be transferred at high speed.
  • the plurality of sub arrays 11 are grouped into a plurality of banks arranged in the first direction X of the memory chip 10 , each of the DQ buffer and multiplexer circuits 12 is connected to the data lines DQi of a corresponding sub array of each of different banks, and each of the banks has data paths connected to the corresponding I/O pads 13 .
  • a cache memory system in which a sense amplifier of each sub array is employed as a cache memory is applied to the first embodiment, data can be read out of the different banks independently and thus the hit rate of the cache memory can be increased. If, in this case, the sense amplifiers of one bank are so constructed that they keep holding the current data even in the access standby mode of the bank, regardless of the access to another bank, the number of sense amplifiers latching data is increased and the hit rate of the cache memory can be enhanced further.
  • this configuration includes a register circuit 26 for holding a row address for each sub array and a comparator 27 for comparing the row address (corresponding to a selected row) held in the register circuit 26 with a new row address.
  • the comparator 27 compares the two row addresses described above. If they coincide with each other, the comparator outputs a hit signal, and data of a column corresponding to a column address is output without any operation of the rows. If they do not coincide, it outputs a mishit signal, and the register 26 , word line WLi and sense amplifier 24 are reset and then the new row address is set in the register circuit 26 . The rows are operated in accordance with the new row address held in the register circuit 26 .
  • the sub array is supplied again with an access request and a row address to determine whether a hit or a mishit occurs. In the case of hit, data of a column corresponding to a column address is read out without any operation of the rows.
  • the above operations are performed in the plurality of sub arrays 11 by sequentially supplying the sub arrays 11 with an access request. In each of the sub arrays 11 , only the row in which a mishit occurs can be selected and thus all the rows need not be selected every time a mishit occurs.
  • FIG. 3 shows an example of the arrangement of sub arrays 11 , DQ buffer and multiplexer circuits 12 and I/O pads 13 in a memory chip of a DRAM according to a second embodiment of the present invention.
  • the second embodiment differs from the first embodiment only in that the sub arrays 11 are grouped into two banks in the second direction Y of the memory chip.
  • the same structural elements as those in FIG. 1 are denoted by the same reference numerals.
  • the DRAM of the second embodiment is able to perform the same operation as that of the DRAM of the first embodiment and achieve substantially the same advantage as that of the latter DRAM.
  • each of the sub arrays 11 shown in FIG. 3 includes dynamic type memory cells MC (FIG. 2) arranged in matrix on a memory chip 10 in the first and second directions X and Y perpendicular to each other.
  • the sub arrays 11 are grouped into a plurality of banks and the operations of the sub arrays 11 are controlled for each of the banks.
  • the groups of sub arrays 11 are arranged in the second direction Y, and the total of groups comes to two.
  • each of the groups includes such arrays 11 arranged in two lines in the first direction X and corresponds to one bank.
  • each connected to the memory cells MC on the same row and formed in the first direction X and a plurality of pairs of bit lines BLi and ⁇ overscore (BLi) ⁇ (i 1, 2, . . . ) each connected to the memory cells MC on the same column and formed in the second direction Y.
  • the word lines WLi are selected by a row decoder 21
  • the bit lines BLi and ⁇ overscore (BLi) ⁇ are selected by a column selection circuit 23 selected by a column decoder 21 .
  • Each of the sub arrays also includes a plurality of sense amplifiers 24 for amplifying the potentials read out from the memory cells MC on a row selected by the row decoder 21 .
  • Each of the DQ buffer and multiplexer circuits 12 is connected to the pairs of data lines DQi and ⁇ overscore (DQi) ⁇ of a corresponding sub array 11 of each of the banks to amplify data supplied through the pairs of data lines.
  • the DQ buffer and multiplexer circuits 12 are arranged in the second direction Y.
  • Each of the I/O pads 13 is connected to its corresponding one of the DQ buffer and multiplexer circuits 12 , and these pads are arranged in the second direction Y and nearer to the edge of the memory chip than the buffer and multiplexer circuits 12 are.
  • a multiplexer of each of the DQ buffer and multiplexer circuits 12 includes switching elements (e.g., MOS transistors 25 ) corresponding to the data lines DQi and ⁇ overscore (DQi) ⁇ of the different banks, and each of the switching elements is connected in series between its corresponding data line and I/O pad 13 , as is illustrated in FIG. 2 . Consequently, data can be input/output to/from the different banks by the DQ buffer and multiplexer circuits 12 .
  • switching elements e.g., MOS transistors 25
  • the data lines (DQ 1 , DQ 3 , . . . in FIG. 3 ), which are connected to the sub arrays located far from the I/O pads 13 , pass by or over the sub arrays located near to the I/O pads.
  • the pattern view of the data lines may be the same as that shown in FIG. 5 .
  • the DQ buffer and multiplexers 12 and I/O pads 13 are arranged on one side of the memory chip 10 .
  • the data lines DQi and ⁇ overscore (DQi) ⁇ include not only portions in parallel with the word lines WLi but also portions perpendicular to the word lines WLi.
  • the total length of the data paths is shorter than that of the prior art arrangement shown in FIG. 4 in which all of the data paths is connected to a single multiplexer.
  • the data lines DQi, ⁇ overscore (DQi) ⁇ , DQ buffer and multiplexer circuits 12 and I/O pads 13 are arranged with efficiency, the data paths formed in the chip 10 are shortened, as are the lead frame in the package and the wires on the circuit board, with the result that data can be transferred at high speed.
  • the plurality of sub arrays 11 are grouped into a plurality of banks arranged in the second direction Y of the memory chip 10 , each of the DQ buffer and multiplexer circuits 12 is connected to the data lines DQi of a corresponding sub array of each of different banks, and each of the banks has data paths connected to the corresponding I/O pads 13 .
  • a cache memory system in which a sense amplifier of each sub array is employed as a cache memory is applied to the second embodiment, data can be read out of the different banks independently and thus the hit rate of the cache memory can be increased. If, in this case, the sense amplifiers of one bank are so constructed that they keep holding the current data even in the access standby mode of the bank, regardless of the access to another bank, the number of sense amplifiers latching data is increased and the hit rate of the cache memory can be enhanced further.
  • this configuration includes a register circuit 26 for holding a row 10 address for each sub array and a comparator 27 for comparing the row address (corresponding to a selected row) held in the register circuit 26 with a new row address.
  • the comparator 27 compares the two row addresses described above. If they coincide with each other, the comparator outputs a hit signal, and data of a column corresponding to a column address is output without any operation of the rows. If they do not coincide, it outputs a mishit signal, and the register 26 , word line WLi and sense amplifier 24 are reset and then the new row address is set in the register circuit 26 . The rows are operated in accordance with the new row address held in the register circuit 26 .
  • the sub array is supplied again with an access request and a row address to determine whether a hit or a mishit occurs. In the case of hit, data of a column corresponding to a column address is read out without any operation of the rows.
  • the above operations are performed in the plurality of sub arrays 11 by sequentially supplying the sub arrays 11 with an access request. In each of the sub arrays 11 , only the row in which a mishit occurs can be selected and thus all the rows need not be selected every time a mishit occurs.
  • the data paths formed in the semiconductor chip are shortened, data can be transferred at high speed, and the hit rate of the cache memory can be raised if a cache memory system using sense amplifiers is adopted.

Abstract

In a dynamic type memory, a memory cell array is divided into a plurality of sub arrays on a memory chip. Each of the sub arrays is provided with a data line formed in parallel with word lines. Data buffer and multiplexer circuits and I/O pads are arranged on one side of the memory chip in parallel with bit lines. This arrangement allows a data path to be shortened and enables data to be transferred at high speed.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor memory device and, more specifically, to a dynamic type memory or a dynamic RAM (DRAM) capable of transferring data at high speed through an input/output path.
2. Description of the Related Art
In a dynamic type memory, a divided cell array operating system is employed wherein a memory cell array is divided into a plurality of cell arrays (sub arrays) and some of the cell arrays are operated at the same time. This system makes it possible to reduce a charge/discharge current of bit lines which occupies a large part of the consumed current in an operation of rows. The number of sub arrays has a close relation to the operation speed of the memory. If each sub array is large in size, the capacity of word lines is increased too much and thus the rise and fall speeds of the word lines are decreased. Since the capacity of bit lines is also increased too much, a difference in potential between a pair of bit lines is lessened, and the speed at which the potential difference is amplified by a sense amplifier becomes slow, with the result that the operation speed of the entire memory is decreased. For this reason, as the memory is miniaturized and its capacity is increased, the number of sub arrays is likely to increase in order to reduce the charge/discharge current of the bit lines and then prevent the operation speed of the entire memory from lowering.
The semiconductor chip of a conventional versatile DRAM is applicable to a variety of bit configurations such as 1-bit, 4-bit, 8-bit, and 16-bit configurations and various types of packaging such as DIP, SOJ, TSOP and ZIP. For this reason, as shown in FIG. 4, a DQ buffer 43 for amplifying data of a data line 42 is provided in the vicinity of each of sub arrays 41 on the semiconductor chip, data of all the DQ buffers 43 are concentrated in a single multiplexer 44 arranged on the chip (in the center of the chip in FIG. 4), and data having a bit configuration is supplied from the multiplexer to an I/O pad 45 of its corresponding packaging.
According to the above conventional technique wherein all data read out from the sub arrays, which tend to increase in size, are concentrated on the chip, the data paths formed in the chip are lengthened to prevent data from being transferred at high speed.
In a specified DRAM chip, by concentrating the I/O pads on one side of the chip or using a vertical surface mounting package (VSMP) capable of being vertically mounted on a memory mounting printed circuit board, the lead frame in the package and the wires on the circuit board are shortened to increase in data transfer speed and, at the same time, to improve in data transfer rate by adopting a multi-bit configuration such as 8-bit and 16-bit configurations.
A dynamic RAM (DRAM) is achieved at low cost as a memory which is employed in bulk in a computer system. In the field of computers, the operation speed of a microprocessor (MPU) is remarkably improved and thus becomes higher and higher than that of the DRAM. The improvement in speed of data transfer between the MPU and DRAM is an important factor in increasing the processing speed of the total computer system. Various improvements have been made to increase the data transfer speed, and a typical one of them is to adopt a high-speed memory or a cache memory. The memory, which is interposed between the MPU and the main memory to shorten the difference between the cycle time of the MPU and the access time of the main memory, improves in efficiency in use of the MPU.
As examples of the cache memory, there are a static RAM (SRAM) of a chip separated from both a MPU chip and a DRAM chip, an SRAM called an on-chip cache memory or an embedded memory mounted on an MPU chip (an MPU chip mounted with a cache memory may have an SRAM cache memory of another chip), and an SRAM cell mounted on a DRAM chip.
The technique of mounting a cache memory including SRAM cells on a DRAM chip, is disclosed in “A Circuit Design of Intelligent CDDRAM with Automatic Write Back Capability,” 1990 Symposium on VLSI Circuits, Digest of Technical Papers, pp 79-80. According to this technique, an SRAM cell is added to each column of a DRAM using cells each having one transistor and one capacitor, and this SRAM cell is employed as a cache memory. Moreover, when data of an address to be read out is not stored in the cache memory (mishit), the data of the cache memory is written back to a DRAM cell corresponding to the address, and then data stored in a DRAM cell of an address to be accessed are read out into the cache memory. This cache memory mounted DRAM can be employed together with a cache memory mounted MPU. The technique of using sense amplifiers of bit lines of a DRAM as cache memories is disclosed in Japanese Patent Application No. 3-41316 (Jpn. Pat. Appln. KOKAI Publication No. 4-212780) whose applicant is the same as that of the present application. A specific constitution of the cache memories and a specific control operation thereof are disclosed in Japanese Patent Application No. 3-41315 whose applicant is also the same as that of the present application.
Furthermore, Japanese Patent Application No. 4-131095, the applicant of which is the same as that of the present application, proposes a DRAM wherein a memory region is divided into a plurality of sub arrays, the sub arrays are operated independently of one another, and sense amplifiers of bit lines are employed as cache memories, thereby enhancing the hit rate of the cache memories.
Since, in this DRAM, a sense amplifier holds data read out from a row corresponding to each of different addresses for each of the sub arrays, a hit possibility of requesting access to a selected row can be increased, and the average of data access time, which depends on both the hit possibility and mishit possibility of not requesting the access, can be reduced.
A cache memory system using sense amplifiers will now be described in brief. Assume that a DRAM stands by for access from an MPU and, in this case, data read out from memory cells of a row address is latched in the sense amplifiers.
If there is access to the row address, data of whose memory cells is latched in the sense amplifiers (hit), the data can be output only by the operation of columns without that of rows, and access time necessary for the operation of rows can be shortened accordingly.
In contrast, if there is access to a row address, data of whose memory cells is not latched in the sense amplifiers (mishit), it is necessary that the data of the sense amplifiers is written back to the memory cells (or the sense amplifiers are equalized), and then data of a new row address be latched in the sense amplifiers. In this mishit case, the access time is much longer than when no cache memory system is employed.
If the hit rate of the cache memories is low, the average access time of the system is lengthened. To increase the hit rate is therefore important for shortening the average access time of the system.
In order to enhance the foregoing hit rate, there is a first method of increasing the capacity of each of the cache memories or a second method of dividing the cache memories into some banks.
If the first method is applied to the cache memory system using sense amplifiers, the sense amplifiers, which stand by for access while latching data, are increased in number. Generally, as described above, a large-capacity memory performs partial activation of activating some of sub arrays at the same time and, in this case, no data is usually held in the sense amplifiers related to the sub arrays in which an operation of rows is not performed. If, however, these sense amplifiers are caused to latch data, the sense amplifiers standing by for access while latching data, can be increased in number, as can be the capacity of the cache memories, thereby enhancing the hit rate.
If the above second method is applied to the cache memory system using sense amplifiers, these sense amplifiers are divided into a plurality of banks. In a versatile DRAM, generally, the sense amplifiers related to a plurality of sub arrays operate simultaneously to perform sensing, latching, and equalizing operations at the same timing, while the sense amplifiers related to the sub arrays in which an operation of rows is not performed, as described above, are allowed to stand by while latching data. The simultaneously-operating sense amplifiers are called banks. In order to divide the sense amplifiers into banks for the purpose of increasing the hit rate of the cache memories, the following conditions are required:
(1) Each bank has independent sense amplifiers.
(2) The sense amplifiers of a bank, in which an operation of rows is not performed, are able to continue latching data of the bank, irrespective of row addresses of the other banks.
(3) Each bank includes data paths corresponding to all I/O pads since a specific bank is accessed to access a certain cache memory, whereas in a multi-bit DRAM, data has to be supplied from the accessed bank to the I/O pads at the same timing.
The conventional DRAM described above has the problem in which, since data of all the sub arrays, which tend to increase in size, are concentrated on the chip, the data paths formed in the chip are lengthened to prevent data from being transferred at high speed.
SUMMARY OF THE INVENTION
The present invention has been developed in order to resolve the above problem and its object is to provide a dynamic type memory capable of increasing the speed of data transfer by shortening data paths formed in a chip and enhancing the hit rate of a cache memory when a cache memory system using sense amplifiers is adopted.
According to the present invention, there is provided a dynamic type memory comprising:
a memory cell array formed on a semiconductor chip having a first edge and a second edge perpendicular to the first edge;
a plurality of sub arrays into which the memory cell array is divided, the plurality of sub arrays being arranged in a first direction parallel to the first edge and a second direction perpendicular to the first direction, and grouped into a plurality of banks, each of the plurality of sub arrays having a plurality of memory cells arranged in matrix;
a plurality of word lines formed on the semiconductor memory chip for each of the plurality of sub arrays and extending in the first direction, each of the plurality of word lines being connected to those of the memory cells which are in a row;
a plurality of bit lines formed on the semi-conductor memory chip for each of the plurality of sub arrays and extending in the second direction, each of the plurality of bit lines being connected to those of the memory cells which are in a column;
a plurality of sense amplifiers formed on the semiconductor memory chip for each of the plurality of sub arrays and connected to the plurality of bit lines, each for sensing and amplifying a potential read out from a memory cell when a corresponding bit line is selected;
a plurality of data lines formed on the semiconductor memory chip for the plurality of sub arrays and extending in the first direction in which the word lines extend, each of the plurality of data lines being connected to the sense amplifiers of a corresponding sub array, for transferring data sensed and amplified by a sense amplifier the bit line connected to which is selected;
a plurality of data buffer and multiplexer circuits formed on the semiconductor memory chip in the second direction, each of the plurality of data buffer and multiplexer circuits being connected to one of the sub arrays of each of the banks; and
a plurality of input/output pads connected to the data buffer and multiplexer circuits, the input/output pads being in an arrangement in the second direction on the semiconductor memory chip, the arrangement being, closer to the second edge of the semiconductor memory chip than the data buffer and multiplexer circuits.
All the data lines are formed in parallel with the word lines, and the data buffer and multiplexer circuits and input/output pads are arranged locally on one side of the memory chip in parallel with the bit lines.
Since these data lines, data buffer and multiplexer circuits, and input/output pads are arranged with efficiency, the data paths formed in the memory chip are shortened and thus data can be transferred at high speed.
One data buffer and multiplexer circuit is connected to the data lines of a sub array of each of the banks, and each of the banks has data paths connected to the input/output pads. Therefore, when a sense amplifier cache memory system using the sense amplifiers as cache memories is adopted, data of the banks can be multiplexed and the hit rate of the cache memories can be increased.
Each of the banks may comprise those of the sub arrays which are grouped in the second direction.
Each of the banks may comprise those of the sub arrays which are grouped in the first direction.
It is preferable that those of the data lines which are provided for those of the sub arrays which are far from the input/output pads are over those of the sub arrays which are near to the input/output pads.
It is also preferable that those of the data lines which are provided for those of the sub arrays which are far from the input/output pads are close to those of the sub arrays which are near to the input/output pads.
It is preferable that a size of those of the data lines which are provided for those of the sub arrays which are far from the input/output pads is larger than that of those of the data lines which are provided for those of the sub arrays which are near to the input/output pads.
Additional objects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out in the appended claims.
BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate presently preferred embodiments of the invention and, together with the general description given above and the detailed description of the preferred embodiments given below, serve to explain the principles of the invention.
FIG. 1 is a view of the arrangement of sub arrays, DQ buffer and multiplexer circuits and I/O pads in a chip of a DRAM according to a first embodiment of the present invention;
FIG. 2 is a circuit diagram showing part of the arrangement of FIG. 1 including one sub array, one DQ buffer and multiplexer circuit and one I/O pad;
FIG. 3 is a view of the arrangement of sub arrays, DQ buffer and multiplexer circuits and I/O pads in a chip of a DRAM according to a second embodiment of the present invention;
FIG. 4 is a view of the arrangement of sub arrays, DQ buffers, a multiplexer and I/O pads in a chip of a conventional versatile DRAM; and
FIG. 5 is a partial pattern view of the arrangement shown in FIG. 1.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
FIG. 1 shows an example of the arrangement of sub arrays 11, DQ buffer and multiplexer circuits 12 and I/O pads 13 in a DRAM chip according to a first embodiment of the present invention, and FIG. 2 specifically shows part of the arrangement of FIG. 1 including one sub array 11, one DQ buffer and multiplexer circuit 12 and one I/O pad 13.
Each of the sub arrays 11 shown in FIG. 1 includes dynamic type memory cells MC (FIG. 2) arranged in matrix on a memory chip 10 in the first and second directions X and Y perpendicular to each other. The sub arrays 11 are grouped into a plurality of banks and the operations of the sub arrays 11 are controlled for each of the banks. In the first embodiment, the groups of sub arrays 11 are arranged in the first direction X, and the total of groups comes to two. In this first embodiment, each of the groups includes such arrays 11 arranged in a line in the second direction Y and corresponds to one bank.
As shown in FIG. 2, each of the sub arrays 11 includes a plurality of word lines WLi (i=1, 2, . . . ) each connected to the memory cells MC on the same row and formed in the first direction X and a plurality of pairs of bit lines BLi and {overscore (BLi)} (i=1, 2, . . . ) each connected to the memory cells MC on the same column and formed in the second direction Y. The word lines WLi are selected by a row decoder 21, while the bit lines BLi and {overscore (BLi)} are selected by a column selection circuit 23 selected by a column decoder 21. Each of the sub arrays also includes a plurality of sense amplifiers 24 for amplifying the potentials read out from the memory cells MC on a row selected by the row decoder 21.
A plurality of pairs of data lines DQi and {overscore (DQi)}, each of which is connected to its corresponding sub array 11, extend in parallel with the word lines WLi to transfer data supplied from one of the sense amplifiers 24 on a selected column of the sub array 11.
Each of the DQ buffer and multiplexer circuits 12 is connected to the pairs of data lines DQi and {overscore (DQi)} of a corresponding sub array 11 of each of the banks to amplify data supplied through the pairs of data lines. The DQ buffer and multiplexer circuits 12 are arranged in the second direction Y.
Each of the I/O pads 13 is connected to its corresponding one of the DQ buffer and multiplexer circuits 12, and these pads are arranged in the second direction Y and nearer to the edge of the memory chip than the buffer and multiplexer circuits 12 are.
To connect the data lines of different banks is unfavorable since the load capacity of the data lines is increased and thus the delay in data transfer is lengthened. In the first embodiment, therefore, a multiplexer of each of the DQ buffer and multiplexer circuits 12 includes switching elements (e.g., MOS transistors 25) corresponding to the data lines DQi and {overscore (DQi)} of the different banks, and each of the switching elements is connected in series between its corresponding data line and I/O pad 13, as is illustrated in FIG. 2. Consequently, data can be input/output to/from the different banks by the DQ buffer and multiplexer circuits 12.
The data lines (DQ1, DQ3, . . . in FIG. 1) connected to the sub arrays of one bank located far from the I/O pads 13 are longer than those (DQ2, DQ4, . . . in FIG. 1) connected to the sub arrays of the other bank located near to the I/O pads 13. In order to make the wiring resistance of the data lines substantially equal, the wiring resistance of the longer data lines has to be prevented from increasing. It is thus desirable to make the longer data lines wider than the shorter data lines.
Furthermore, the longer data lines, which are connected to the sub arrays of the bank located far from the I/O pads, pass by or over the sub arrays including sense amplifiers of the bank located near to the I/O pads. FIG. 5 is a partial pattern view in which the data line DQ1 extending from the far located bank and the data line DQ2 extending from the near located bank are formed on an insulation film. The data line DQ1 extending from the far located bank passes over the sense amplifier region of the sub array of the near located bank.
In the DRAM of the first embodiment, all the data lines DQi and {overscore (DQi)} are formed in parallel with the word lines WLi, and the DQ buffer and multiplexers 12 and I/O pads 13 are arranged on one side of the memory chip 10.
As described above, since the data lines DQi, {overscore (DQi)}, DQ buffer and multiplexer circuits 12 and I/O pads 13 are arranged with efficiency, the data paths formed in the chip 10 are shortened, as are the lead frame in the package and the wires on the circuit board, with the result that data can be transferred at high speed.
As described above, in the first embodiment, the plurality of sub arrays 11 are grouped into a plurality of banks arranged in the first direction X of the memory chip 10, each of the DQ buffer and multiplexer circuits 12 is connected to the data lines DQi of a corresponding sub array of each of different banks, and each of the banks has data paths connected to the corresponding I/O pads 13.
If a cache memory system in which a sense amplifier of each sub array is employed as a cache memory is applied to the first embodiment, data can be read out of the different banks independently and thus the hit rate of the cache memory can be increased. If, in this case, the sense amplifiers of one bank are so constructed that they keep holding the current data even in the access standby mode of the bank, regardless of the access to another bank, the number of sense amplifiers latching data is increased and the hit rate of the cache memory can be enhanced further.
The configuration to which the cache memory system is applied is similar to that of Japanese Patent Application No. 4-131095 the applicant of which is the same as that of the present application. As indicated by the dotted line in FIG. 2, this configuration includes a register circuit 26 for holding a row address for each sub array and a comparator 27 for comparing the row address (corresponding to a selected row) held in the register circuit 26 with a new row address.
When a sub array is supplied with an access request and a row address, the comparator 27 compares the two row addresses described above. If they coincide with each other, the comparator outputs a hit signal, and data of a column corresponding to a column address is output without any operation of the rows. If they do not coincide, it outputs a mishit signal, and the register 26, word line WLi and sense amplifier 24 are reset and then the new row address is set in the register circuit 26. The rows are operated in accordance with the new row address held in the register circuit 26. The sub array is supplied again with an access request and a row address to determine whether a hit or a mishit occurs. In the case of hit, data of a column corresponding to a column address is read out without any operation of the rows. The above operations are performed in the plurality of sub arrays 11 by sequentially supplying the sub arrays 11 with an access request. In each of the sub arrays 11, only the row in which a mishit occurs can be selected and thus all the rows need not be selected every time a mishit occurs.
FIG. 3 shows an example of the arrangement of sub arrays 11, DQ buffer and multiplexer circuits 12 and I/O pads 13 in a memory chip of a DRAM according to a second embodiment of the present invention.
The second embodiment differs from the first embodiment only in that the sub arrays 11 are grouped into two banks in the second direction Y of the memory chip. In FIG. 3, the same structural elements as those in FIG. 1 are denoted by the same reference numerals.
The DRAM of the second embodiment is able to perform the same operation as that of the DRAM of the first embodiment and achieve substantially the same advantage as that of the latter DRAM.
Specifically, each of the sub arrays 11 shown in FIG. 3 includes dynamic type memory cells MC (FIG. 2) arranged in matrix on a memory chip 10 in the first and second directions X and Y perpendicular to each other. The sub arrays 11 are grouped into a plurality of banks and the operations of the sub arrays 11 are controlled for each of the banks. In the second embodiment, the groups of sub arrays 11 are arranged in the second direction Y, and the total of groups comes to two. In this second embodiment, each of the groups includes such arrays 11 arranged in two lines in the first direction X and corresponds to one bank. As shown in FIG. 2, each of the sub arrays 11 includes a plurality of word lines WLi (i=1, 2, . . . ) each connected to the memory cells MC on the same row and formed in the first direction X and a plurality of pairs of bit lines BLi and {overscore (BLi)} (i=1, 2, . . . ) each connected to the memory cells MC on the same column and formed in the second direction Y. The word lines WLi are selected by a row decoder 21, while the bit lines BLi and {overscore (BLi)} are selected by a column selection circuit 23 selected by a column decoder 21. Each of the sub arrays also includes a plurality of sense amplifiers 24 for amplifying the potentials read out from the memory cells MC on a row selected by the row decoder 21.
A plurality of pairs of data lines DQi and {overscore (DQi)}, each of which is connected to its corresponding sub array 11, extend in parallel with the word lines WLi to transfer data supplied from one of the sense amplifiers 24 on a selected column of the sub array 11.
Each of the DQ buffer and multiplexer circuits 12 is connected to the pairs of data lines DQi and {overscore (DQi)} of a corresponding sub array 11 of each of the banks to amplify data supplied through the pairs of data lines. The DQ buffer and multiplexer circuits 12 are arranged in the second direction Y.
Each of the I/O pads 13 is connected to its corresponding one of the DQ buffer and multiplexer circuits 12, and these pads are arranged in the second direction Y and nearer to the edge of the memory chip than the buffer and multiplexer circuits 12 are.
To connect the data lines of different banks is unfavorable since the load capacity of the data lines is increased and thus the delay in data transfer is lengthened. Therefore, a multiplexer of each of the DQ buffer and multiplexer circuits 12 includes switching elements (e.g., MOS transistors 25) corresponding to the data lines DQi and {overscore (DQi)} of the different banks, and each of the switching elements is connected in series between its corresponding data line and I/O pad 13, as is illustrated in FIG. 2. Consequently, data can be input/output to/from the different banks by the DQ buffer and multiplexer circuits 12.
The data lines (DQ1, DQ3, . . . in FIG. 3), which are connected to the sub arrays located far from the I/O pads 13, pass by or over the sub arrays located near to the I/O pads. The pattern view of the data lines may be the same as that shown in FIG. 5.
Also, in the DRAM of the second embodiment, the DQ buffer and multiplexers 12 and I/O pads 13 are arranged on one side of the memory chip 10. On the other hand, the data lines DQi and {overscore (DQi)} include not only portions in parallel with the word lines WLi but also portions perpendicular to the word lines WLi. However, the total length of the data paths is shorter than that of the prior art arrangement shown in FIG. 4 in which all of the data paths is connected to a single multiplexer.
As described above, since the data lines DQi, {overscore (DQi)}, DQ buffer and multiplexer circuits 12 and I/O pads 13 are arranged with efficiency, the data paths formed in the chip 10 are shortened, as are the lead frame in the package and the wires on the circuit board, with the result that data can be transferred at high speed.
As described above, in the second embodiment, the plurality of sub arrays 11 are grouped into a plurality of banks arranged in the second direction Y of the memory chip 10, each of the DQ buffer and multiplexer circuits 12 is connected to the data lines DQi of a corresponding sub array of each of different banks, and each of the banks has data paths connected to the corresponding I/O pads 13.
If a cache memory system in which a sense amplifier of each sub array is employed as a cache memory is applied to the second embodiment, data can be read out of the different banks independently and thus the hit rate of the cache memory can be increased. If, in this case, the sense amplifiers of one bank are so constructed that they keep holding the current data even in the access standby mode of the bank, regardless of the access to another bank, the number of sense amplifiers latching data is increased and the hit rate of the cache memory can be enhanced further.
The configuration to which the cache memory system is applied is similar to that of Japanese Patent Application No. 4-131095 the applicant of which is the same as that of the present application. As indicated by the dotted line in FIG. 2, this configuration includes a register circuit 26 for holding a row 10 address for each sub array and a comparator 27 for comparing the row address (corresponding to a selected row) held in the register circuit 26 with a new row address.
When a sub array is supplied with an access request and a row address, the comparator 27 compares the two row addresses described above. If they coincide with each other, the comparator outputs a hit signal, and data of a column corresponding to a column address is output without any operation of the rows. If they do not coincide, it outputs a mishit signal, and the register 26, word line WLi and sense amplifier 24 are reset and then the new row address is set in the register circuit 26. The rows are operated in accordance with the new row address held in the register circuit 26. The sub array is supplied again with an access request and a row address to determine whether a hit or a mishit occurs. In the case of hit, data of a column corresponding to a column address is read out without any operation of the rows. The above operations are performed in the plurality of sub arrays 11 by sequentially supplying the sub arrays 11 with an access request. In each of the sub arrays 11, only the row in which a mishit occurs can be selected and thus all the rows need not be selected every time a mishit occurs.
As described above, according to the present invention, the data paths formed in the semiconductor chip are shortened, data can be transferred at high speed, and the hit rate of the cache memory can be raised if a cache memory system using sense amplifiers is adopted.
Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details, and representative devices shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

Claims (120)

What is claimed is:
1. A dynamic type memory comprising:
a memory cell array formed on a semiconductor chip having a first edge and a second edge perpendicular to the first edge;
a plurality of sub arrays into which said memory cell array is divided, said plurality of sub arrays being arranged in a first direction parallel to the first edge and a second direction perpendicular to said first direction, and grouped into a plurality of banks, each of said plurality of sub arrays having a plurality of memory cells arranged in matrix;
a plurality of word lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the first direction, each of said plurality of word lines being connected to those of the memory cells which are in a row;
a plurality of bit lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the second direction, each of said plurality of bit lines being connected to those of the memory cells which are in a column;
a plurality of sense amplifiers formed on the semiconductor memory chip for each of said plurality of sub arrays and connected to said plurality of bit lines, each for sensing and amplifying a potential read out from a memory cell when a corresponding bit line is selected;
a plurality of data lines formed on the semiconductor memory chip for said plurality of sub arrays and extending in the first direction in which said word lines extend, each of said plurality of data lines being connected to the sense amplifiers of a corresponding sub array, for transferring data sensed and amplified by a sense amplifier the bit line connected to which is selected;
a plurality of data buffer and multiplexer circuits formed on the semiconductor memory chip in the second direction and in parallel to said second edge of said semiconductor memory chin chip, each of said plurality of data buffer and multiplexer circuits being connected to one of said sub arrays of each of said banks; and
a plurality of input/output pads connected to said data buffer and multiplexer circuits, the input/output pads being in an arrangement in the second direction on the semiconductor memory chip and being in parallel to said second edge of said semiconductor memory, chip, the arrangement being closer to the second edge of the semiconductor memory chip than said data buffer and multiplexer circuits.
2. A dynamic type memory according to claim 1, wherein said banks are spaced apart from each other in said second direction.
3. A dynamic type memory according to claim 1, wherein said banks are spaced apart from each other in said first direction.
4. A dynamic type memory according to claim 1, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output pads are over those of said sub arrays which are near to said input/output pads.
5. A dynamic type memory according to claim 2, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output pads are over those of said sub arrays which are near to said input/output pads.
6. A dynamic type memory according to claim 3, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output pads are over those of said sub arrays which are near to said input/output pads.
7. A dynamic type memory according to claim 1, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output pads are arranged above portions of those of said sub arrays which are near to said input/output pads.
8. A dynamic type memory according to claim 2, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output pads are arranged above portions of those of said sub arrays which are near to said input/output pads.
9. A dynamic type memory according to claim 3, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output pads are arranged above portions of those of said sub arrays which are near to said input/output pads.
10. A dynamic type memory according to claim 1, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said input/output pads is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said input/output pads.
11. A dynamic type memory according to claim 2, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said input/output pads is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said input/output pads.
12. A dynamic type memory according to claim 3, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said input/output pads is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said input/output pads.
13. A semiconductor memory device, comprising:
a semiconductor chip formed on a semiconductor substrate;
a memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction;
data buffer and multiplexer circuits formed on said semiconductor chip and spaced apart from each other in the second direction, each data buffer and multiplexer circuit being connected to a sub array from each memory cell bank; and
input/output pads formed on said semiconductor chip and spaced apart from each other in the second direction, each input/output pad being connected to a corresponding data buffer and multiplexer circuit,
wherein said data buffer and multiplexer circuits are arranged between said input/output pads and said sub arrays.
14. A semiconductor memory device according to claim 13, wherein said sub arrays comprise dynamic memory cells arranged in rows and columns.
15. A semiconductor memory device according to claim 14, further comprising:
word lines each connecting the dynamic memory cells in a row of one of said sub arrays, said word lines extending in the first direction.
16. A semiconductor memory device according to claim 15, further comprising:
bit lines each connecting the dynamic memory cells in a column of one of said sub arrays, said bit lines extending in the second direction.
17. A semiconductor memory device according to claim 16, further comprising:
sense amplifiers for sensing and amplifying potentials of said bit lines.
18. A semiconductor memory device according to claim 13, further comprising:
data lines for connecting said sub arrays to said data buffer and multiplexer circuits.
19. A semiconductor memory device according to claim 18, wherein said data buffer and multiplexer circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
20. A semiconductor memory device according to claim 18, wherein said data buffer and multiplexer circuits comprise switching elements connected between said data lines and said input/output pads.
21. A semiconductor memory device according to claim 13, wherein said memory cell banks are spaced apart from each other in the first direction.
22. A semiconductor memory device according to claim 13, wherein said memory cell banks are spaced apart from each other in the second direction.
23. A semiconductor memory device, comprising:
a semiconductor chip formed on a semiconductor substrate;
a memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction, each sub array comprising memory cells arranged in rows and columns;
word lines extending in the first direction and provided for each sub array, each word line connecting memory cells in a row of the corresponding sub array;
bit lines extending in the second direction and provided for each sub array, each bit line connecting memory cells in a column of the corresponding sub array;
data buffer and multiplexer circuits formed on said semiconductor chip and spaced apart from each other in the second direction;
data lines including at least data line potions extending in the first direction and connecting said sub arrays and said data buffer and multiplexer circuits such that each data buffer and multiplexer circuit is connected to a sub array from each memory cell bank; and
input/output pads formed on said semiconductor chip and spaced apart from each other in the second direction, each input/output pad being connected to a corresponding data buffer and multiplexer circuit,
wherein said data buffer and multiplexer circuits are arranged between said input/output pads and said sub arrays.
24. A semiconductor memory device according to claim 23, wherein said data buffer and multiplexer circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
25. A dynamic type memory comprising:
a memory cell array formed on a semiconductor chip having a first edge and a second edge perpendicular to the first edge;
a plurality of sub arrays into which said memory cell array is divided, said plurality of sub arrays being arranged in a first direction parallel to the first edge and a second direction perpendicular to said first direction, and grouped into a plurality of banks, each of said plurality of sub arrays having a plurality of memory cells arranged in matrix;
a plurality of word lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the first direction, each of said plurality of word lines being connected to those of the memory cells which are in a row;
a plurality of bit lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the second direction, each of said plurality of bit lines being connected to those of the memory cells which are in a column;
a plurality of sense amplifiers formed on the semiconductor memory chip for each of said plurality of sub arrays and connected to said plurality of bit lines, each for sensing and amplifying a potential read out from a memory cell when a corresponding bit line is selected;
a plurality of data lines formed on the semiconductor memory chip for said plurality of sub arrays and extending in the first direction in which said word lines extend, each of said plurality of data lines being connected to the sense amplifiers of a corresponding sub array, for transferring data sensed and amplified by a sense amplifier the bit line connected to which is selected;
a plurality of multiplexer circuits formed on the semiconductor memory chip in the second direction and in parallel to the second edge of the semiconductor memory chip, each of said plurality of multiplexer circuits being connected to one of said sub arrays of each of said banks;
a plurality of data buffer circuits formed on the semiconductor memory chip in the second direction and in parallel to the second edge of the semiconductor memory chip, each of said plurality of data buffer circuits being connected to a corresponding multiplexer circuit; and
a plurality of input/output nodes connected to said data buffer circuits, said input/output nodes being in an arrangement in the second direction on the semiconductor memory chip and being in parallel to the second edge of the semiconductor memory chip, the arrangement being closer to the second edge of the semiconductor memory chip than said data buffer circuits and said multiplexer circuits.
26. A dynamic type memory according to claim 25, wherein said banks are spaced apart from each other in the second direction.
27. A dynamic type memory according to claim 25, wherein said banks are spaced apart from each other in the first direction.
28. A dynamic type memory according to claim 25, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are over those of said sub arrays which are near to said input/output nodes.
29. A dynamic type memory according to claim 26, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are over those of said sub arrays which are near to said input/output nodes.
30. A dynamic type memory according to claim 27, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are over those of said sub arrays which are near to said input/output nodes.
31. A dynamic type memory according to claim 25, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are arranged above portions of those of said sub arrays which are near to said input/output nodes.
32. A dynamic type memory according to claim 26, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are arranged above portions of those of said sub arrays which are near to said input/output nodes.
33. A dynamic type memory according to claim 27, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are arranged above portions of those of said sub arrays which are near to said input/output nodes.
34. A dynamic type memory according to claim 25, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said input/output nodes.
35. A dynamic type memory according to claim 26, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said input/output nodes.
36. A dynamic type memory according to claim 27, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said input/output nodes.
37. A semiconductor memory device comprising:
a semiconductor chip formed on a semiconductor substrate;
a memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction;
multiplexer circuits formed on said semiconductor chip and spaced apart from each other in the second direction, each multiplexer circuit being connected to a sub array from each memory cell bank;
data buffer circuits formed on said semiconductor chip and spaced apart from each other in the second direction, each data buffer circuit being connected to a corresponding multiplexer circuit;
input/output nodes formed on said semiconductor chip and spaced apart from each other in the second direction, each input/output node being connected to a corresponding data buffer circuit; and
wherein said data buffer circuits and said multiplexer circuits are arranged between said input/output nodes and said sub arrays.
38. A semiconductor memory device according to claim 37, wherein said sub arrays comprise dynamic memory cells arranged in rows and columns.
39. A semiconductor memory device according to claim 38, further comprising:
word lines each connecting the dynamic memory cells in a row of one of said sub arrays, said word lines extending in the first direction.
40. A semiconductor memory device according to claim 39, further comprising:
bit lines each connecting the dynamic memory cells in a column of one of said sub arrays, said bit lines extending in the second direction.
41. A semiconductor memory device according to claim 40, further comprising:
sense amplifiers for sensing and amplifying potentials of said bit lines.
42. A semiconductor memory device according to claim 37, further comprising:
data lines for connecting said sub arrays to said multiplexer circuits.
43. A semiconductor memory device according to claim 42, wherein said multiplexer circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
44. A semiconductor memory device according to claim 42, wherein said multiplexer circuits comprise switching elements connected between said data lines and said data buffer circuits.
45. A semiconductor memory device according to claim 37, wherein said memory cell banks are spaced apart from each other in the first direction.
46. A semiconductor memory device according to claim 37, wherein said memory cell banks are spaced apart from each other in the second direction.
47. A semiconductor memory device comprising:
a semiconductor chip formed on a semiconductor substrate;
a memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction, each sub array comprising memory cells arranged in rows and columns;
word lines extending in the first direction and provided for each sub array, each word line connecting memory cells in a row of the corresponding sub array;
bit lines extending in the second direction and provided for each sub array, each bit line connecting memory cells in a column of the corresponding sub array;
multiplexer circuits formed on said semiconductor chip and spaced apart from each other in the second direction;
data buffer circuits formed on said semiconductor chip and spaced apart from each other in the second direction;
data lines including at least data line portions extending in the first direction and connecting said sub arrays and said multiplexer circuits such that each multiplexer circuit is connected to a sub array from each memory cell bank;
input/output nodes formed on said semiconductor chip and spaced apart from each other in the second direction, each input/output node being connected to a corresponding data buffer circuit; and
wherein said data buffer circuits and said multiplexer circuits are arranged between said input/output nodes and said sub arrays.
48. A semiconductor memory device according to claim 47, wherein said multiplexer circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
49. A dynamic type memory comprising:
a memory cell array formed on a semiconductor chip having a first edge and a second edge perpendicular to the first edge;
a plurality of sub arrays into which said memory cell array is divided, said plurality of sub arrays being arranged in a first direction parallel to the first edge and a second direction perpendicular to said first direction, and grouped into a plurality of banks, each of said plurality of sub arrays having a plurality of memory cells arranged in matrix;
a plurality of word lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the first direction, each of said plurality of word lines being connected to those of the memory cells which are in a row;
a plurality of bit lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the second direction, each of said plurality of bit lines being connected to those of the memory cells which are in a column;
a plurality of sense amplifiers formed on the semiconductor memory chip for each of said plurality of sub arrays and connected to said plurality of bit lines, each for sensing and amplifying a potential read out from a memory cell when a corresponding bit line is selected;
a plurality of data lines formed on the semiconductor memory chip for said plurality of sub arrays and extending in the first direction in which said word lines extend, each of said plurality of data lines being connected to the sense amplifiers of a corresponding sub array, for transferring data sensed and amplified by a sense amplifier the bit line connected to which is selected;
a plurality of switch circuits formed on the semiconductor memory chip in the second direction and in parallel to said second edge of said semiconductor memory chip, each of said plurality of switch circuits being connected to one of said sub arrays of each of said banks;
a plurality of data buffer circuits formed on the semiconductor memory chip in the second direction and in parallel to said second edge of said semiconductor memory chip, each of said plurality of data buffer circuits being connected to a corresponding switch circuit; and
a plurality of input/output nodes connected to said data buffer circuits, the input/output nodes being in an arrangement in the second direction on the semiconductor memory chip and being in parallel to said second edge of said semiconductor memory chip, the arrangement being closer to the second edge of the semiconductor memory chip than said data buffer circuits and said switch circuits.
50. A dynamic type memory according to claim 49, wherein said banks are spaced apart from each other in the second direction.
51. A dynamic type memory according to claim 49, wherein said banks are spaced apart from each other in the first direction.
52. A dynamic type memory according to claim 49, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are over those of said sub arrays which are near to said input/output nodes.
53. A dynamic type memory according to claim 50, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are over those of said sub arrays which are near to said input/output nodes.
54. A dynamic type memory according to claim 51, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are over those of said sub arrays which are near to said input/output nodes.
55. A dynamic type memory according to claim 49, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are arranged above portions of those of said sub arrays which are near to said input/output nodes.
56. A dynamic type memory according to claim 50, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are arranged above portions of those of said sub arrays which are near to said input/output nodes.
57. A dynamic type memory according to claim 51, wherein those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes are arranged above portions of those of said sub arrays which are near to said input/output nodes.
58. A dynamic type memory according to claim 49, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said input/output nodes.
59. A dynamic type memory according to claim 50, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said input/output nodes.
60. A dynamic type memory according to claim 51, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said input/output nodes is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said input/output nodes.
61. A semiconductor memory device comprising:
a semiconductor chip formed on a semiconductor substrate;
a memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction;
switch circuits formed on said semiconductor chip and spaced apart from each other in the second direction, each switch circuit being connected to a sub array from each memory cell bank;
data buffer circuits formed on said semiconductor chip and spaced apart from each other in the second direction, each data buffer circuit being connected to a corresponding switch circuit;
input/output nodes formed on said semiconductor chip and spaced apart from each other in the second direction, each input/output node being connected to a corresponding data buffer circuit; and
wherein said data buffer circuits and said switch circuits are arranged between said input/output nodes and said sub arrays.
62. A semiconductor memory device according to claim 61, wherein said sub arrays comprise dynamic memory cells arranged in rows and columns.
63. A semiconductor memory device according to claim 62, further comprising:
word lines each connecting the dynamic memory cells in a row of one of said sub arrays, said word lines extending in the first direction.
64. A semiconductor memory device according to claim 63, further comprising:
bit lines each connecting the dynamic memory cells in a column of one of said sub arrays, said bit lines extending in the second direction.
65. A semiconductor memory device according to claim 64, further comprising:
sense amplifiers for sensing and amplifying potentials of said bit lines.
66. A semiconductor memory device according to claim 61, further comprising:
data lines for connecting said sub arrays to said switch circuits.
67. A semiconductor memory device according to claim 66, wherein said switch circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
68. A semiconductor memory device according to claim 66, wherein said switch circuits comprise switching elements connected between said data lines and said data buffer circuits.
69. A semiconductor memory device according to claim 61, wherein said memory cell banks are spaced apart from each other in the first direction.
70. A semiconductor memory device according to claim 61, wherein said memory cell banks are spaced apart from each other in the second direction.
71. A semiconductor memory device comprising:
a semiconductor chip formed on a semiconductor substrate;
a memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction, each sub array comprising memory cells arranged in rows and columns;
word lines extending in the first direction and provided for each sub array, each word line connecting memory cells in a row of the corresponding sub array;
bit lines extending in the second direction and provided for each sub array, each bit line connecting memory cells in a column of the corresponding sub array;
switch circuits formed on said semiconductor chip and spaced apart from each other in the second direction;
data buffer circuits formed on said semiconductor chip and spaced apart from each other in the second direction;
data lines including at least data line portions extending in the first direction and connecting said sub arrays and said switch circuits such that each switch circuit is connected to a sub array from each memory cell bank;
input/output nodes formed on said semiconductor chip and spaced apart from each other in the second direction, each input/output node being connected to a corresponding data buffer circuit; and
wherein said data buffer circuits and said switch circuits are arranged between said input/output nodes and said sub arrays.
72. A semiconductor memory device according to claim 71, wherein said switch circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
73. A dynamic type memory comprising:
a memory cell array formed on a semiconductor chip having a first edge and a second edge perpendicular to the first edge;
a plurality of sub arrays into which said memory cell array is divided, said plurality of sub arrays being arranged in a first direction parallel to the first edge and a second direction perpendicular to said first direction, and grouped into a plurality of banks, each of said plurality of sub arrays having a plurality of memory cells arranged in matrix;
a plurality of word lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the first direction, each of said plurality of word lines being connected to those of the memory cells which are in a row;
a plurality of bit lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the second direction, each of said plurality of bit lines being connected to those of the memory cells which are in a column;
a plurality of sense amplifiers formed on the semiconductor memory chip for each of said plurality of sub arrays and connected to said plurality of bit lines, each for sensing and amplifying a potential read out from a memory cell when a corresponding bit line is selected;
a plurality of data lines formed on the semiconductor memory chip for said plurality of sub arrays and extending in the first direction in which said word lines extend, each of said plurality of data lines being connected to the sense amplifiers of a corresponding sub array, for transferring data sensed and amplified by a sense amplifier the bit line connected to which is selected;
a plurality of multiplexer circuits formed on the semiconductor memory chip in the second direction and in parallel to said second edge of said semiconductor memory chip, each of said plurality of multiplexer circuits being connected to one of said sub arrays of each of said banks; and
a plurality of data buffer circuits formed on the semiconductor memory chip in the second direction and in parallel to said second edge of said semiconductor memory chip, each of said plurality of data buffer circuits being connected to a corresponding multiplexer circuit.
74. A dynamic type memory according to claim 73, wherein said banks are spaced apart from each other in the second direction.
75. A dynamic type memory according to claim 73, wherein said banks are spaced apart from each other in the first direction.
76. A dynamic type memory according to claim 73, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are over those of said sub arrays which are near to said data buffer circuits.
77. A dynamic type memory according to claim 74, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are over those of said sub arrays which are near to said data buffer circuits.
78. A dynamic type memory according to claim 75, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are over those of said sub arrays which are near to said data buffer circuits.
79. A dynamic type memory according to claim 73, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are arranged above portions of those of said sub arrays which are near to said data buffer circuits.
80. A dynamic type memory according to claim 74, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are arranged above portions of those of said sub arrays which are near to said data buffer circuits.
81. A dynamic type memory according to claim 75, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are arranged above portions of those of said sub arrays which are near to said data buffer circuits.
82. A dynamic type memory according to claim 73, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said data buffer circuits.
83. A dynamic type memory according to claim 74, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said data buffer circuits.
84. A dynamic type memory according to claim 75, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said data buffer circuits.
85. A semiconductor memory device comprising:
a semiconductor chip formed on a semiconductor substrate;
a memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction;
multiplexer circuits formed on said semiconductor chip and spaced apart from each other in the second direction, each multiplexer circuit being connected to a sub array from each memory cell bank;
data buffer circuits formed on said semiconductor chip and spaced apart from each other in the second direction, each data buffer circuit being connected to a corresponding multiplexer circuit; and
wherein said multiplexer circuits are arranged between said data buffer circuits and said sub arrays.
86. A semiconductor memory device according to claim 85, wherein said sub arrays comprise dynamic memory cells arranged in rows and columns.
87. A semiconductor memory device according to claim 86, further comprising:
word lines each connecting the dynamic memory cells in a row of one of said sub arrays, said word lines extending in the first direction.
88. A semiconductor memory device according to claim 87, further comprising:
bit lines each connecting the dynamic memory cells in a column of one of said sub arrays, said bit lines extending in the second direction.
89. A semiconductor memory device according to claim 88, further comprising:
sense amplifiers for sensing and amplifying potentials of said bit lines.
90. A semiconductor memory device according to claim 85, further comprising:
data lines for connecting said sub arrays to said multiplexer circuits.
91. A semiconductor memory device according to claim 90, wherein said multiplexer circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
92. A semiconductor memory device according to claim 90, wherein said multiplexer circuits comprise switching elements connected between said data lines and said data buffer circuits.
93. A semiconductor memory device according to claim 85, wherein said memory cell banks are spaced apart from each other in the first direction.
94. A semiconductor memory device according to claim 85, wherein said memory cell banks are spaced apart from each other in the second direction.
95. A semiconductor memory device comprising:
a semiconductor chip formed on a semiconductor substrate;
a memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction, each sub array comprising memory cells arranged in rows and columns;
word lines extending in the first direction and provided for each sub array, each word line connecting memory cells in a row of the corresponding sub array;
bit lines extending in the second direction and provided for each sub array, each bit line connecting memory cells in a column of the corresponding sub array;
multiplexer circuits formed on said semiconductor chip and spaced apart from each other in the second direction;
data buffer circuits formed on said semiconductor chip and spaced apart from each other in the second direction;
data lines including at least data line portions extending in the first direction and connecting said sub arrays and said multiplexer circuits such that each multiplexer circuit is connected to a sub array from each memory cell bank; and
wherein said multiplexer circuits are arranged between said data buffer circuits and said sub arrays.
96. A semiconductor memory device according to claim 95, wherein said multiplexer circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
97. A dynamic type memory comprising:
a memory cell array formed on a semiconductor chip having a first edge and a second edge perpendicular to the first edge;
a plurality of sub arrays into which said memory cell array is divided, said plurality of sub arrays being arranged in a first direction parallel to the first edge and a second direction perpendicular to said first direction, and grouped into a plurality of banks, each of said plurality of sub arrays having a plurality of memory cells arranged in matrix;
a plurality of word lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the first direction, each of said plurality of word lines being connected to those of the memory cells which are in a row;
a plurality of bit lines formed on the semiconductor memory chip for each of said plurality of sub arrays and extending in the second direction, each of said plurality of bit lines being connected to those of the memory cells which are in a column;
a plurality of sense amplifiers formed on the semiconductor memory chip for each of said plurality of sub arrays and connected to said plurality of bit lines, each for sensing and amplifying a potential read out from a memory cell when a corresponding bit line is selected;
a plurality of data lines formed on the semiconductor memory chip for said plurality of sub arrays and extending in the first direction in which said word lines extend, each of said plurality of data lines being connected to the sense amplifiers of a corresponding sub array, for transferring data sensed and amplified by a sense amplifier the bit line connected to which is selected;
a plurality of switch circuits formed on the semiconductor memory chip in the second direction and in parallel to said second edge of said semiconductor memory chip, each of said plurality of switch circuits being connected to one of said sub arrays of each of said banks; and
a plurality of data buffer circuits formed on the semiconductor memory chip in the second direction and in parallel to said second edge of said semiconductor memory chip, each of said plurality of data buffer circuits being connected to a corresponding switch circuit.
98. A dynamic type memory according to claim 97, wherein said banks are spaced apart from each other in said second direction.
99. A dynamic type memory according to claim 97, wherein said bands are spaced apart from each other in said first direction.
100. A dynamic type memory according to claim 97, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are over those of said sub arrays which are near to said data buffer circuits.
101. A dynamic type memory according to claim 98, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are over those of said arrays which are near to said data buffer circuits.
102. A dynamic type memory according to claim 99, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are over those of said sub arrays which are near to said data buffer circuits.
103. A dynamic type memory according to claim 97, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are arranged above portions of those of said sub arrays which are near to said data buffer circuits.
104. A dynamic type memory according to claim 98, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are arranged above portions of those of said sub arrays which are near to said data buffer circuits.
105. A dynamic type memory according to claim 99, wherein those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits are arranged above portions of those of said sub arrays which are near to said data buffer circuits.
106. A dynamic type memory according to claim 97, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said data buffer circuits.
107. A dynamic type memory according to claim 98, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said data buffer circuits.
108. A dynamic type memory according to claim 99, wherein a size of those of said data lines which are provided for those of said sub arrays which are far from said data buffer circuits is larger than that of those of the data lines which are provided for those of said sub arrays which are near to said data buffer circuits.
109. A semiconductor memory device comprising:
a semiconductor chip formed on a semiconductor substrate;
memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction;
switch circuits formed on said semiconductor chip and spaced apart from each other in the second direction, each switch circuit being connected to a sub array from each memory cell bank;
data buffer circuits formed on said semiconductor chip and spaced apart from each other in the second direction, each data buffer circuit being connected to a corresponding switch circuit; and
wherein said switch circuits are arranged between said data buffer circuits and said sub arrays.
110. A semiconductor memory device according to claim 109, wherein said sub arrays comprise dynamic memory cells arranged in rows and columns.
111. A semiconductor memory device according to claim 110, further comprising:
word lines each connecting the dynamic memory cells in a row of one of said sub arrays, said word lines extending in the first direction.
112. A semiconductor memory device according to claim 111, further comprising:
bit lines each connecting the dynamic memory cells in a column of one of said sub arrays, said bit lines extending in the second direction.
113. A semiconductor memory device according to claim 112, further comprising:
sense amplifiers for sensing and amplifying potentials of said bit lines.
114. A semiconductor memory device according to claim 109, further comprising:
data lines for connecting said sub arrays to said switch circuits.
115. A semiconductor memory device according to claim 114, wherein said switch circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
116. A semiconductor memory device according to claim 114, wherein said switch circuits comprise switching elements connected between said data lines and said data buffer circuits.
117. A semiconductor memory device according to claim 109, wherein said memory cell banks are spaced apart from each other in the first direction.
118. A semiconductor memory device according to claim 109, wherein said memory cell banks are spaced apart from each other in the second direction.
119. A semiconductor memory device comprising:
a semiconductor chip formed on a semiconductor substrate;
a memory cell array formed on said semiconductor chip, said memory cell array comprising sub arrays organized into memory banks which are spaced apart from each other in one of a first and a second direction, each sub array comprising memory cells arranged in rows and columns;
word lines extending in the first direction and provided for each sub array, each word line connecting memory cells in a row of the corresponding sub array;
bit lines extending in the second direction and provided for each sub array, each bit line connecting memory cells in a column of the corresponding sub array;
switch circuits formed on said semiconductor chip and spaced apart from each other in the second direction;
data buffer circuits formed on said semiconductor chip and spaced apart from each other in the second direction;
data lines including at least data line portions extending in the first direction and connecting said sub arrays and said switch circuits such that each switch circuit is connected to a sub array from each memory cell bank; and
wherein said switch circuits are arranged between said data buffer circuits and said sub arrays.
120. A semiconductor memory device according to claim 119, wherein said switch circuits are connected to the sub arrays of a first memory cell bank by first ones of said data lines having a first size and to the sub arrays of a second memory cell bank by second ones of said data lines having a second size different than the first size.
US09/493,001 1994-09-22 2000-01-27 Dynamic type memory Expired - Lifetime USRE37427E1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/493,001 USRE37427E1 (en) 1994-09-22 2000-01-27 Dynamic type memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP22761494A JP3421441B2 (en) 1994-09-22 1994-09-22 Dynamic memory
JP6-227614 1994-09-22
US08/530,725 US5712827A (en) 1994-09-22 1995-09-19 Dynamic type memory
US09/493,001 USRE37427E1 (en) 1994-09-22 2000-01-27 Dynamic type memory

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US08/530,725 Reissue US5712827A (en) 1994-09-22 1995-09-19 Dynamic type memory

Publications (1)

Publication Number Publication Date
USRE37427E1 true USRE37427E1 (en) 2001-10-30

Family

ID=16863701

Family Applications (2)

Application Number Title Priority Date Filing Date
US08/530,725 Ceased US5712827A (en) 1994-09-22 1995-09-19 Dynamic type memory
US09/493,001 Expired - Lifetime USRE37427E1 (en) 1994-09-22 2000-01-27 Dynamic type memory

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US08/530,725 Ceased US5712827A (en) 1994-09-22 1995-09-19 Dynamic type memory

Country Status (5)

Country Link
US (2) US5712827A (en)
JP (1) JP3421441B2 (en)
KR (1) KR100226596B1 (en)
CN (1) CN1096679C (en)
TW (1) TW275712B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040256641A1 (en) * 2001-01-18 2004-12-23 Mee-Hyun Ahn Pad arrangement in semiconductor memory device and method of driving semiconductor device

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3421441B2 (en) * 1994-09-22 2003-06-30 東芝マイクロエレクトロニクス株式会社 Dynamic memory
KR100203145B1 (en) * 1996-06-29 1999-06-15 김영환 Semiconductor memory devicebank-interleaved method
JPH10134564A (en) * 1996-07-11 1998-05-22 Texas Instr Inc <Ti> Memory device
US6044433A (en) * 1996-08-09 2000-03-28 Micron Technology, Inc. DRAM cache
JP3310174B2 (en) * 1996-08-19 2002-07-29 東芝マイクロエレクトロニクス株式会社 Semiconductor integrated circuit
JP3280867B2 (en) * 1996-10-03 2002-05-13 シャープ株式会社 Semiconductor storage device
JP3557114B2 (en) * 1998-12-22 2004-08-25 株式会社東芝 Semiconductor storage device
KR100328726B1 (en) * 1999-04-29 2002-03-20 한탁돈 Memory access system and method thereof
US6404694B2 (en) 1999-08-16 2002-06-11 Hitachi, Ltd. Semiconductor memory device with address comparing functions
KR100314129B1 (en) * 1999-09-13 2001-11-15 윤종용 Semiconductor implementing bank and data input/output line architecture to reduce data input/output line loading
KR100335493B1 (en) * 1999-10-27 2002-05-04 윤종용 Semiconductor memory device uniformiting sensing efficiency of data line sense amplifier
JP2003338175A (en) * 2002-05-20 2003-11-28 Mitsubishi Electric Corp Semiconductor circuit device
KR100546321B1 (en) * 2003-03-15 2006-01-26 삼성전자주식회사 Multibank memory device having voltage sense amplifier and current sense amplifier of data lines
DE102004013055B4 (en) * 2003-03-15 2008-12-04 Samsung Electronics Co., Ltd., Suwon Semiconductor memory module with Datenleitungsabtastverstärker
JP4534132B2 (en) * 2004-06-29 2010-09-01 エルピーダメモリ株式会社 Stacked semiconductor memory device
US7405957B2 (en) * 2005-12-28 2008-07-29 Infineon Technologies Ag Edge pad architecture for semiconductor memory
KR100745374B1 (en) * 2006-02-21 2007-08-02 삼성전자주식회사 Multi-port semiconductor memory device and method for signals input/output therefore
JP4693656B2 (en) * 2006-03-06 2011-06-01 株式会社東芝 Nonvolatile semiconductor memory device
JP4843336B2 (en) * 2006-03-06 2011-12-21 株式会社東芝 Nonvolatile semiconductor memory device
JP2009009633A (en) * 2007-06-27 2009-01-15 Elpida Memory Inc Semiconductor storage device
CN102332287B (en) * 2011-07-15 2013-09-18 北京兆易创新科技股份有限公司 Storage circuit and method for reading data by applying same
CN102332296B (en) * 2011-07-15 2013-06-26 北京兆易创新科技股份有限公司 Data reading method and data writing method of memory circuit
KR101995950B1 (en) * 2012-05-03 2019-07-03 에스케이하이닉스 주식회사 Semiconductor device and method of driving the same
WO2019132994A1 (en) * 2017-12-29 2019-07-04 Intel Corporation Memory arrays
US20230352111A1 (en) * 2022-04-29 2023-11-02 Changxin Memory Technologies, Inc. Memory array detection circuit and detection method, and memory

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027326A (en) * 1988-11-10 1991-06-25 Dallas Semiconductor Corporation Self-timed sequential access multiport memory
US5126973A (en) * 1990-02-14 1992-06-30 Texas Instruments Incorporated Redundancy scheme for eliminating defects in a memory device
US5204841A (en) * 1990-07-27 1993-04-20 International Business Machines Corporation Virtual multi-port RAM
US5251178A (en) * 1991-03-06 1993-10-05 Childers Jimmie D Low-power integrated circuit memory
US5377144A (en) * 1993-07-27 1994-12-27 Texas Instruments Inc. Memory array reconfiguration for testing
US5459693A (en) * 1990-06-14 1995-10-17 Creative Integrated Systems, Inc. Very large scale integrated planar read only memory
US5519655A (en) * 1994-09-29 1996-05-21 Texas Instruments Incorporated Memory architecture using new power saving row decode implementation
US5712827A (en) * 1994-09-22 1998-01-27 Kabushiki Kaisha Toshiba Dynamic type memory
US5812490A (en) * 1997-02-27 1998-09-22 Mitsubishi Denki Kabushiki Kaisha Synchronous dynamic semiconductor memory device capable of restricting delay of data output timing

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027326A (en) * 1988-11-10 1991-06-25 Dallas Semiconductor Corporation Self-timed sequential access multiport memory
US5126973A (en) * 1990-02-14 1992-06-30 Texas Instruments Incorporated Redundancy scheme for eliminating defects in a memory device
US5459693A (en) * 1990-06-14 1995-10-17 Creative Integrated Systems, Inc. Very large scale integrated planar read only memory
US5204841A (en) * 1990-07-27 1993-04-20 International Business Machines Corporation Virtual multi-port RAM
US5251178A (en) * 1991-03-06 1993-10-05 Childers Jimmie D Low-power integrated circuit memory
US5377144A (en) * 1993-07-27 1994-12-27 Texas Instruments Inc. Memory array reconfiguration for testing
US5712827A (en) * 1994-09-22 1998-01-27 Kabushiki Kaisha Toshiba Dynamic type memory
US5519655A (en) * 1994-09-29 1996-05-21 Texas Instruments Incorporated Memory architecture using new power saving row decode implementation
US5812490A (en) * 1997-02-27 1998-09-22 Mitsubishi Denki Kabushiki Kaisha Synchronous dynamic semiconductor memory device capable of restricting delay of data output timing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040256641A1 (en) * 2001-01-18 2004-12-23 Mee-Hyun Ahn Pad arrangement in semiconductor memory device and method of driving semiconductor device
US7200067B2 (en) * 2001-01-18 2007-04-03 Samsung Electronics Co., Ltd. Pad arrangement in semiconductor memory device and method of driving semiconductor device

Also Published As

Publication number Publication date
KR960012007A (en) 1996-04-20
KR100226596B1 (en) 1999-10-15
CN1144385A (en) 1997-03-05
JP3421441B2 (en) 2003-06-30
US5712827A (en) 1998-01-27
CN1096679C (en) 2002-12-18
TW275712B (en) 1996-05-11
JPH0896570A (en) 1996-04-12

Similar Documents

Publication Publication Date Title
USRE37427E1 (en) Dynamic type memory
US5586078A (en) Dynamic type memory
US6373777B1 (en) Semiconductor memory
US5509132A (en) Semiconductor memory device having an SRAM as a cache memory integrated on the same chip and operating method thereof
US6862229B2 (en) Physically alternating sense amplifier activation
US6442098B1 (en) High performance multi-bank compact synchronous DRAM architecture
US7082491B2 (en) Memory device having different burst order addressing for read and write operations
US6353549B1 (en) Architecture and package orientation for high speed memory devices
US7359252B2 (en) Memory data bus structure and method of transferring information with plural memory banks
US6459647B1 (en) Split-bank architecture for high performance SDRAMs
JP3190624B2 (en) Semiconductor memory
JPH04302894A (en) Dram structure having dispersed adress reading and timing control
US5657265A (en) Semiconductor memory device having circuit array structure for fast operation
US5923594A (en) Method and apparatus for coupling data from a memory device using a single ended read data path
US5517442A (en) Random access memory and an improved bus arrangement therefor
KR20000009120A (en) Semiconductor memory device having data bus line of uniform length
KR960003591B1 (en) Semiconductor memory device
JP3278646B2 (en) Semiconductor device
US7405957B2 (en) Edge pad architecture for semiconductor memory
EP0913831B1 (en) Space-efficient master data line (MDQ) switch placement
JP2000058772A (en) Semiconductor memory device
KR100221073B1 (en) Synchronous semiconductor memory device
US6215718B1 (en) Architecture for large capacity high-speed random access memory
KR102299020B1 (en) Memory device for artificial intelligence operation
KR100380023B1 (en) Semiconductor memory device for reducing size of chip of short side

Legal Events

Date Code Title Description
FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12