USRE39024E1

USRE39024E1 - Exposure apparatus having catadioptric projection optical system

Info

Publication number: USRE39024E1
Application number: US09/665,184
Authority: US
Inventors: Tomowaki Takahashi
Original assignee: Nikon Corp
Current assignee: Nikon Corp
Priority date: 1994-04-28
Filing date: 2000-09-15
Publication date: 2006-03-21
Anticipated expiration: 2015-09-15
Also published as: JP3395801B2; USRE38421E1; JPH07294819A; US5999333A; US5808805A

Abstract

To use a beam splitting optical system smaller than the conventional beam splitters and to set a longer optical path between a concave, reflective mirror and an image plant. A light beam from an object surface travels through a first converging group to enter a beam splitter, and a light beam reflected by the beam splitter is reflected by a concave, reflective mirror to form an image of patterns on the object surface inside the concave, reflective mirror. A light beam from the image of the patterns passes through the beam splitter and thereafter forms an image of the patterns through a third converging group on an image plane.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a catadioptric projection optical system suitable for applications to projection optical systems for 1.1 or demagnifying projection in projection exposure apparatus such as steppers used in fabricating, for example, semiconductor devices or liquid crystal display devices, etc., by photolithography process. More particularly, the invention relates to a catadioptric projection optical system of a magnification of 1/4 to 1/5 with a resolution of submicron order in the ultraviolet wavelength region, using a reflecting system as an element in the optical system.

2. Related Background Art

In fabricating semiconductor devices or liquid crystal display devices, etc by photolithography process, the projection exposure apparatus is used for demagnifying through a projection optical system a pattern image on a reticle (or photomask, etc.) for example at a ratio of about 1/4 to 1/5 to effect exposure of the image on a wafer (or glass plate, etc.) coated with a photoresist or the like.

The projection exposure apparatus with a catadioptric projection optical system is disclosed, for example, in Japanese Laid-open Patent Application No. 2-66510, Japanese Laid-open Patent Application No. 3-282527, U.S. Pat. (USP) No. 5,089,913, Japanese Laid-open Patent Application No. 5-72478, or U.S. Pat. No. 5,052,763, No. 4,779,966, No. 4,65,77, No 4,701,035.

SUMMARY OF THE INVENTION

An object of the present invention is to provide an exposure apparatus having a catadioptric projection optical system which can use a beam splitting optical system smaller than the conventional polarizing beam splitter and which is excellent in image-forming performance, permitting a sufficiently long optical path of from the concave, reflective mirror to the image plane. Therefore, the catadioptric projection optical system has a space permitting an aperture stop to be set therein, based on a size reduction of the beam splitting optical system such as a polarizing beam splitter. The catadioptric projection optical system can be applied to the projection exposure apparatus of the scanning exposure method, based on use of a compact beam splitting optical system. Besides the projection exposure apparatus of the one-shot exposure method, the catadioptric projection optical system can be also applier to recent apparatus employing a scanning exposure method such as the slit scan method or the step-and-scan method, etc. for effecting exposure while relatively scanning the reticle and the wafer to the projection optical system.

To achieve the above object, as shown in FIG. 1, an exposure apparatus of the present invention comprises at least a wafer stage 3 allowing a photosensitive substrate W to be held on a main surface thereof, an illumination optical system 1 for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern of a mask (reticle R) onto the substrate W, a catadioptric projection optical system 5 provided between a first surface P1 on which the mask R is disposed and a second surface P2 to which a surface of the substrate W is corresponded, for projecting an image of the pattern of the mask R onto the substrate W. The illumination optical system 1 includes an alignment optical system 110 for adjusting a relative positions between the mask R and the wafer W, and the mask R is disposed on a reticle stage 2 which is movable in parallel with respect to the main surface of the wafer stage 3. The catadioptric projection optical system has a space permitting an aperture stop 6 to be set therein. The sensitive substrate W comprises a wafer 8 such as a silicon wafer or a glass plate, etc., and a photosensitive material 7 such as a photoresist or the like coating a surface of the wafer 8.

In particular, as shown in FIGS. 2, 17, and 31, the catadioptric projection optical system comprises a first image-forming optical system (G₁(f₁), G₂(f₂)) for forming an intermediate image 11 of the pattern of the mask R, and a second image-forming optical system (G₃(f₃)) for forming an image of the intermediate image 11 on the substrate reticle. The first image-forming optical system has a first group G₁(f₁) with a positive refractive power, comprising a refractive lens component, for converging a light beam from the pattern of the mask R, a second group G₂(f₂) with a positive refractive power, comprising a concave, reflective mirror M₂for reflecting a light beam from the first group G₁(f₁), for forming the intermediate image 11 of the pattern of the mask R, and a beam splitting optical system 10PBS (including 10A, 10B, and 10C) or 12 as a beam splitting optical system for changing a traveling direction of one of a light beam from the first group G₁(f₁) and a reflected light from the concave, reflective mirror M₂, and thereby a part of the light beam converged by the second group G₂(f₂) is guided to the second image-forming optical system G₃(f₃). The parameter f₁means as a focus length of the first group G₁in the first image-forming optical system, the parameter f₂means as a focus length of the second group G₂in the first image-forming optical system, and the parameter f₃means as a focus length of a lens group G₃in the second image-forming optical system.

The catadioptric projection optical system in FIG. 2 is an optical system for projecting an image of a pattern of a first surface P1 onto a second surface P2, which has a first image-forming optical system (G₁, G₂) for forming an intermediate image 11 of the pattern of the first surface P1 and a second image-forming optical system (G₃) for forming an image of the intermediate image 11 on the second surface P2.

The first image-forming optical system comprises a first group G₁(f₁) of a positive refractive power, comprising a refractive lens component, for converging a light beam from the pattern of the first surface P1, a prism type beam splitter 10PBS for separating a part of a light beam from the first group by a beam splitter surface 10PBSa arranged obliquely to the optical axis AX1 of the first group, and a second group G₂(f₂) with a positive refractive power, comprising a concave, reflective mirror M₂for reflecting the light beam separated by the prism type beam splitter 10PBS, for forming the intermediate image 11 of the pattern near the prism type beam splitter 10PBS, in which a part of the light beam converged by the second group G₂(f₂) is separated by the prism type beam splitter 10PBS to be guided to the second image-forming optical system G₃(f₃). The prism type beam splitter is disposed on the optical axis AX1 of the first group G₁(f₁) and provided between the concave, reflective mirror M₂and the second image-forming optical system.

In this case, it is desirable that the intermediate image 11 of the pattern be formed inside the prism type beam sputter 10PBS. Also, as shown in FIG. 2, it is desired that in order to prevent generation of flare due to repetitive reflections between the concave, reflective mirror M₂and the second surface P2, a polarizing beam sputter be used as the beam splitter 10PBS and a quarter wave plate 9 be placed between the polarizing beam splitter and the concave, reflective mirror M₂. Further, it is desired that the optical system be telecentric at least on the image plane P2 side.

Next, the catadioptric projection optical system in FIG. 17 is an optical system for projecting an image of a pattern P10 on a first surface P1 onto a second surface P2 which has a first image-forming optical system (G₁(f₁), G₂(f₂)) for forming an intermediate image 11 of the pattern P10 of the first surface P1, and a second image-forming optical system (G₃(f₃)) for forming an image of the intermediate image 11 on the second surface P2.

The first image-forming optical system comprises a first group G₁(f₁) of a positive refractive power, comprising a refractive lens component, for converging a light beam from the pattern P10 of the first surface P1, a partial mirror 12 for separating a part of the light beam from the first group by a first reflective surface 12a arranged obliquely to the optical axis AX1 of the first group, and a second group G₂(f₂) of a positive refractive power, comprising a concave, reflective mirror M₂for reflecting the light beam of which the part is separated by the partial mirror 12, for forming the intermediate image 11 of the pattern P10 near the partial mirror 12, in which a part of the light beam converged by the second group is guided to the second image-forming optical system G₃(f₃). The partial mirror 12 is positioned so as to avoid being disposed on the optical axis AX1 of the first group and provided between the first group and the second group. The partial mirror 12 further has a second reflective surface for guiding the reflected light beam from the concave, reflective mirror M₂to the second image-forming optical system, the second reflective surface 12b being opposite to the first reflective surface 12a.

In this case, because the light beam reflected by a second surface 12b of the partial mirror 12 is used, it is desired that an image-forming range be slit or arcuate. Namely, the catadioptric projection optical system in FIG. 17 is suitable for applications to the projection exposure apparatus of the scanning exposure method. In this case, because the use of the partial mirror 12 includes little influence of repetitive reflections, the quarter wave plate can be obviated.

In these arrangements, the following conditions should be preferably satisfied when individual Petzval sums of the first group G₁(f₁), the second group G₂(f₂), and the second image-forming optical system G₃(f₃) are p₁, p₂, p₃respectively.
p₁+p₃>0 (1)
p₂<0 (2)
|p₁+p₂+p₃|<0.1 (3)

Further, the following conditions should be preferably satisfied when a magnification of primary image formation of from the pattern on the first surface P1 to the intermediate image is β₁₂, a magnification of secondary image formation of from the intermediate image to the image on the second surface P2 is β₃, and a magnification of from the first surface to the second surface is β.
0 1≦|β₁₂|≦0.5 (4)
0.25≦|β₃|≦2 (5)
0 1≦|β|≦0.5 (6)

The catadioptric projection optical system in FIG. 2 is suitably applicable to the projection exposure apparatus of the one-shot exposure method. In this case, because the prism type beam splitter 10PBS is used to separate the light beam coming from the concave, reflective mirror M₂from the light beam going to the concave, reflective mirror M₂and because the beam splitter 10PBS is located near the portion where the light beam from the concave, reflective mirror M₂is once converged to be focused, the prism type beam splitter 10PBS can be constructed in a reduced scale. In other words, in the catadioptric projection optical system, since an intermediate image 11 of the pattern of the first surface P1 is formed between the concave, reflective mirror M₂and the second image-forming optical system, the diameter of the light beam traveling from the concave, reflective mirror M₂to the beam splitter 10PBS will become small.

Also, because the image is once formed between the concave, reflective mirror M₂and the image plane P2, an aperture stop 6 can be placed in the second image-forming optical system G₃(f₃). Accordingly, a coherence factor (σ value) can be readily controlled. With regard to this, because after the primary image formation, the secondary image formation is made by the second image-forming optical system G₃(f₃), the working distance between a fore end lens in the second image-forming optical system G₃(f₃) and the image plane P2 can be secured sufficiently long. In particular, because the projection exposure apparatus of the one-shot exposure method employs the beam splitter 10PBS located near the plane of primary image formation, the beam splitter 10PBS can be made as small as possible.

Next, because the catadioptric projection optical system in FIG. 17 uses the partial mirror 12, a best image region on the image plane P2 is slit or arcuate, thus being suitable for applications to the projection exposure apparatus of the scanning exposure method. In this case, because the image is once formed near the partial mirror 12, the partial mirror 12 may be small in size and characteristics of a reflective film of the partial mirror 12 are stable.

Also, the optical path can be separated simply by providing the partial mirror 12 with a small angle of view. Namely, because a large angle of view is unnecessary for separation of the optical path, a sufficient margin is left in the image-forming performance. With regard to this, ordinary catadioptric projection optical systems need a maximum angle of view of about 20° or more for separation of the optical path, while an angle of view of the light beam entering the partial mirror 12 is about 10°, which is easy in aberration correction.

A so-called ring field optical system is known as a projection optical system for the scanning exposure method, and the ring field optical system is constructed to illuminate only an off-axis annular portion. It is, however, difficult for the ring field optical system to have a large numerical aperture, because it uses an off-axis beam. Further, because optical members in that system are not symmetric with respect to the optical axis, processing, inspection, and adjustment of the optical members are difficult, and accuracy control or accuracy maintenance is also difficult. In contrast with it, because the angle of view is not large in the present invention, the optical system is constructed in a structure with less eclipse of beam.

Since the first image-forming optical system (G₁(f₁), G₂(f₂)) and the second image-forming optical system G₃(f₃) are constructed independently of each other, the optical system is easy in processing, inspection, and adjustment of optical members, is easy in accuracy control and accuracy maintenance, and has excellent image-forming characteristics to realize a large numerical aperture.

Next, in the catadioptric projection optical system shown in FIG. 2 or 17, a Petzval sum of the entire optical system first needs to be set as close to 0, in order to further improve the performance of optical system. Therefore, conditions of equations (1) to (3) should be preferably satisfied.

Satisfying the conditions of equations (1) to (3) prevents curvature of the image plane in the optical performance, which thus makes flatness of the image plane excellent. Above the upper limit of the condition of equation (3) (or if p₁+p₂+p₃≧0.1), the image plane is curved as concave to the object plane; below the lower limit of the condition of equation (3) (or if p₁+p₂+p₃≧−0.1), the image plane is curved as convex to the object, thereby considerably degrading the image-forming performance.

When the conditions of equations (4) to (6) are satisfied as to the magnification β₁₂of primary image formation, the magnification β₃of secondary image formation, and the magnification β of overall image formation, the optical system can be constructed without difficulties. Below the lower limit of each condition of equation (4) to (6), the demagnifying ratio becomes excessive, which makes wide-range exposure difficult. Above the upper limit, the demagnifying ratio becomes closer to magnifying ratios, which is against the original purpose of use for reduction projection in applications to the projection exposure apparatus.

In this case, because the condition of equation (4) is satisfied, the most part of the demagnifying ratio of the overall optical system relies on the first image-forming optical system. Accordingly, the beam splitter 10PBS or the partial mirror 12 can be constructed in a small scale in particular. If the position of the beam splitter 10PBS in FIG. 2 or the partial mirror 12 in FIG. 6 as beam splitting means is made nearly coincident with the entrance pupil and the exit pupil of optical system, a shield portion of the pupil does not change against a change of object height, and therefore, no change of image-forming performance appears across the entire image plane.

Also, it is desired that such an optical system for exposure be telecentric at least on the image plane side in order to suppress a change of magnification against variations in the direction of the optical axis, of the image plane where the wafer or the like is located.

The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not to be considered as limiting the present invention.

Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art form this detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a structural drawing to show the basic structure of the exposure apparatus according to the present invention.

FIG. 2 is a structural drawing to show the basic structure of the catadioptric projection optical system 5 in FIG. 1.

FIG. 3 is an illustration of optical paths of a light beam traveling in the catadioptric projection optical system in FIG. 2.

FIG. 4 is an optical path development of a first embodiment of the catadioptric projection optical system in FIG. 2, the optical path comprising the optical paths OP1, OP2, OP3 shown in FIG. 3.

FIGS. 5 to 9 are aberration diagrams of the first embodiment.

FIG. 10 is an optical path development of the projection optical system in the second embodiment.

FIGS. 11 to 16 are aberration diagrams of the second embodiment.

FIG. 17 is a structural drawing to show the basic structure of the projection optical system in the third embodiment.

FIG. 18 is an optical path development of the projection optical system in the third embodiment.

FIGS. 19 to 24 are aberration diagrams of the third embodiment.

FIG. 25 is an optical path development of the projection optical system in the fourth embodiment.

FIGS. 26 to 30 are aberration diagrams of the fourth embodiment.

FIG. 31 is a structural drawing to show a structure of the catadioptric projection optical system applied to a common exposure apparatus.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Various embodiments of the catadioptric projection optical system according to the present invention will be described with reference to the drawings. In the examples, the present invention is applied to the projection optical system in the projection exposure apparatus for projecting an image of patterns of reticle onto a wafer coated with a photoresist. FIG. 1 shows a basic structure of the exposure apparatus according to the present invention. As shown in FIG. 1, an exposure apparatus of the present invention comprises at least a wafer stage 3 allowing a photosensitive substrate W to be held on a main surface 3a thereof, an illumination optical system 1 for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern of a mask (reticle R) onto the substrate W, a light source 100 for supplying an exposure light to the illumination optical system 1, a catadioptric projection optical system 5 provided between a first surface P1 (object plane) on which the mask R is disposed and a second surface P2 (image plane) to which a surface of the substrate W is corresponded, for projecting an image of the pattern of the mask R onto the substrate W. The illumination optical system 1 includes an alignment optical system 110 for adjusting a relative positions between the mask R and the wafer W, and the mask R is disposed on a reticle stage 2 which is movable in parallel with respect to the main surface of the wafer stage 3. A reticle exchange system 200 conveys and changes a reticle (mask R) to be set on the reticle stage 2. The reticle exchange system 200 includes a stage driver for moving the reticle stage 2 in parallel with respect to the main surface 3a of the wafer stage 3. The catadioptric projection optical system 5 has a space permitting an aperture stop 6 to be set therein. The sensitive substrate W comprises a wafer 8 such as a silicon wafer or a glass plate, etc, and a photosensitive material 7 such as a photoresist or the like coating a surface of the wafer 8. The wafer stage 3 is moved in parallel with respect to a object plane P1 by a stage control system 300. Further, since a main control section 400 such as a computer system controls the light source 100, the reticle exchange system 200, the stage control system 300 or the like, the exposure apparatus can perform a harmonious action as a whole.

The techniques relating to an exposure apparatus of the present invention are described, for example, in U.S. patent applications Ser. No 255,927, No. 260,398, No. 299,305, U.S. Pat. No. 4,497,015, No. 4,666,273, No. 5,194,893, No 5,253,110, No. 5,333,035, No. 5,365,051, No. 5,379,091, or the like. The reference of U.S patent application Ser. No. 255,927 teaches an illumination optical system (using a laser source) applied to a scan type exposure apparatus. The reference of U.S. patent application Ser. No. 260,398 teaches an illumination optical system (using a lamp source) applied to a scan type exposure apparatus. The reference of U.S. patent application Ser. No. 299,305 teaches an alignment optical system applied to a scan type exposure apparatus. The reference of U.S. Pat. No. 4,497,015 teaches an illumination optical system (using a lamp source) applied to a scan type exposure apparatus. The reference of U.S. Pat. No. 4,666,273 teaches a step-and repeat type exposure apparatus capable of using the catadioptric projection optical system of the present invention. The reference of U.S. Pat. No. 5,194,893 teaches an illumination optical system, an illumination region, mask-side and reticle-side interferometers, a focusing optical system, alignment optical system, or the like. The reference of U.S. Pat. No. 5,253,110 teaches an illumination optical system (using a laser source) applied to a step-and-repeat type exposure apparatus. The '110 reference can be applied to a scan type exposure apparatus. The reference of U.S. Pat. No. 5,333,035 teaches an application of an illumination optical system applied to an exposure apparatus. The reference of U.S. Pat. No. 5,365,051 teaches a auto-focusing system applied to an exposure apparatus. The reference of U.S. Pat. No. 5,379,091 teaches an illummation optical system (using a laser source) applied to a scan type exposure apparatus.

In each embodiment as described below, a lens arrangement is illustrated as an optical path development, for example as shown in FIG. 4. In each optical path development, a reflective surface is shown as a transmissive surface, and optical elements are arranged in the order in which light from a reticle R passes. Also, a virtual plane of flat surface (for example r₁₅) is used at a reflective surface of a concave, reflective mirror (for example r₁₄). In order to indicate a shape and separation of lens, for example as shown in FIG. 4, the pattern surface of reticle R is defined as the zeroth surface, surfaces that the light emergent from the reticle R passes in order before reaching the wafer W are defined as i-th surfaces (i=1, 2, . . . ), and the sign for radii r₁of curvature of the i-th surfaces is determined as positive if a surface is convex to the reticle 10 in the optical path development. A surface separation between the i-th surface and the (i+1)-th surface is defined as d₁. SiO₂as a glass material means silica glass. A refractive index of silica glass for reference wavelength (193 nm) used is as follows.

silica glass: 1.56100

First Embodiment

The first embodiment is a projection optical system with a magnification of 1/4x, suitably applicable to the projection exposure apparatus of the one-shot exposure method (steppers etc.). This first embodiment is an embodiment corresponding to the optical system of FIG. 2 as well. FIG. 4 is an optical path development of the projection optical system of the first embodiment. As shown in FIG. 4, light from the patterns on the reticle R travels through a first converging group G₁consisting of four refractive lenses and then is reflected by a beam splitter surface (r₁₀) in a cubic polarizing beam splitter 10A. An optical path of the light is corresponded to the optical path OP1 in FIG. 3. The reflected light passes through a quarter wave plate 9 (not shown in FIG. 4) to reach a second converging group G₂consisting of a negative meniscus lens L₂₀and a concave, reflective mirror M₂. The light reflected by the second converging group G₂passes through the quarter wave plate (not shown in FIG. 4) to form an intermediate image of the patterns in the polarizing beam splitter 10A (see optical paths OP2 and OP3 in FIG. 4).

Then, light from the intermediate image, that is, a light beam having passed through the polarizing beam splitter 10A, then passes through a third converging group G₃consisting of fourteen refractive lenses to form a second intermediate image of the patterns on the surface of wafer W. In this case, an aperture stop 6 is placed on a Fourier transform plane in the third converging group G₃, i.e, between a positive meniscus lens L₃₆and a concave lens L₃₇.

Also, as shown in FIG. 4, the first converging group G₁is composed of, in the order from the reticle R side, a positive meniscus lens L₁₁with a convex surface to the reticle R, a negative meniscus lens L₁₂with a convex surface to the reticle R, a double convex lens (hereinafter referred to simply as “convex lens”) L₁₃, and a double concave lens (hereinafter referred to simply as “concave lens”) L₁₄, and the second converging group G₂is composed of a negative meniscus lens L₂₀with a concave surface to the reticle R and a concave, reflective mirror M₂. Further, the third converging group G₃is composed of a positive meniscus lens L₃₁with a concave surface to the reticle R, a convex lends L₃₂, a positive meniscus lens L₃₃with a concave surface to the reticle R, a convex lens L₃₄, a convex lens L₃₅, a positive meniscus lens L₃₆with a convex surface to the reticle R, a concave lens L₃₇, a convex lens L₃₈, a convex lens L₃₉, a negative meniscus lens L_3A, with a concave surface to the reticle R, a convex lens L_3B, a negative meniscus lens L_3cwith a convex surface to the reticle R, a positive meniscus lens L_3Dwith a convex surface to the reticle R, and a negative meniscus lens L_3Ewith a convex surface to the reticle R.

A magnification of the total system is 1/4x (demagnification), a numerical aperture NA on the wafer W side (image side) is 0.4, and the object height is 30 mm.

The refractive lenses all are made of a kind of optical glass of fused quartz, which are corrected for axial and lateral chromatic aberrations for a wavelength band of 1 nm at the wavelength of 193 nm of the ultraviolet excimer laser light. Also, the optical system has excellent image-forming performance, as well corrected for spherical aberration, coma, astigmatism, and distortion up to a nearly zero aberration state, and the good image-forming performance can be retained even if the optical system of FIG. 4 is proportionally enlarged two to three times.

Next Table 1 shows radii of curvature r₁, surface separations d₁, and glass materials in the first embodiment of FIG. 4. In the following table, the fifteenth surface is a virtual plane for indicating the concave, reflective mirror in the optical path development.

TABLE 1

			Glass				Glass
i	r₁	d₁	Material	i	r₁	d₁	Material

0	—	2.2		24	−140.60	6.0	S₁O₂
1	45.87	15.0	S₁O₂	25	−82.20	1.0
2	323.75	7.5		26	146.49	9.4	S₁O₂
3	4161.48	6.0	S₁O₂	27	−114.12	32.9
4	56.56	11.7		28	84.53	6.0	S₁O₂
5	243.98	10.0	S₁O₂	29	−182.36	1.0
6	−89.98	7.3		30	48.17	6.0	S₁O₂
7	−50.58	6.0	S₁O₂	31	194.47	4.0
8	46.80	5.0		32	−48.51	5.6	S₁O₂
9	∞	30.0	S₁O₂	33	58.04	4.3
10	∞	52.6		34	207.40	8.2	S₁O₂
11	∞	27.0		35	−118.99	0.3
12	−76.04	6.9	S₁O₂	36	103.13	8.2	S₁O₂
13	−140.44	4.1		37	−61.92	3.7
14	−89.27	0.0		38	−38.44	6.7	S₁O₂
15	∞	4.1		39	−42.44	1.0
16	140.44	6.9	S₁O₂	40	308.23	8.0	S₁O₂
17	76.04	79.6		41	−71.28	1.0
18	∞	30.0	S₁O₂	42	19.58	5.7	S₁O₂
19	∞	5.0		43	16.97	2.5
20	−41.51	6.0	S₁O₂	44	19.43	8.0	S₁O₂
21	−39.05	1.0		45	51.61	0.5
22	244.39	10.0	S₁O₂	46	108.17	3.7	S₁O₂
23	−64.38	1.0		47	39.10	7.0

Also, FIG. 5 to 7 show longitudinal aberration diagrams of the first embodiment, FIG. 8 shows a lateral chromatic aberration diagram of the first embodiment, and FIG. 9 shows transverse aberration diagrams of the first embodiment. In particular, FIG. 5 shows spherical aberration of the first embodiment, FIG. 6 shows astigmatism of the first embodiment, and FIG. 7 shows distortion of the first embodiment. In these aberration diagrams, symbols J, P, and Q represent respective characteristics when the used wavelength is changed in a selected range with respect to the reference wavelength. It is seen from these aberration, diagrams that though the numerical aperture is large, 0.4, in this example, the aberrations are well corrected in a wide image circle region. Further, chromatic aberration is well corrected as well.

Second Embodiment

The second embodiment is a projection optical system with a magnification of 1/4x, suitably applicable to the projection exposure apparatus of the scanning exposure method. This second embodiment is an embodiment as a modification of the optical system of FIG. 2 as well. FIG. 10 is an optical path development of the projection optical system of the present embodiment, and FIG. 11 shows an illumination area on the reticle R. As shown in this FIG. 11, an arcuate illumination area P10 on the reticle R is illuminated by an illumination optical system not shown. Then, in FIG. 10, light from patterns in the illumination area P10 on the reticle R travels through a first converging group G₁consisting of four refractive lenses, and then passes a transmissive part of a junction surface in a cubic, partiallyrefiective, beam splitter 10B. A reflective film 10Ba with a reflectivity of approximately 100% is formed in a peripheral part of the junction surface of the partially-reflective beam splitter 10B, and a portion other than this reflective film 10Ba is a transmissive surface with a transmittance of approximately 100%.

The reflected light reaches a second converging group G₂consisting of a negative meniscus lens L₂₀and a concave, reflective mirror M₂, and light reflected by the second converging group G₂forms an intermediate image of the patterns in the illumination area P10, near the reflective film 10Ba in the partially-reflective beam splitter 10B. Then light from the intermediate image is reflected by the reflective film lOBa, then passes through a third converging group G₃consisting of fourteen refractive lenses, and forms a second intermediate image of the patterns on the surface of wafer W. Letting β be a projection magnification of from reticle R to wafer W, the reticle area R is scanned upward at a predetermined velocity V_Rand in synchronization therewith the wafer W is scanned upward at a velocity β•V_R, thus carrying out exposure in the scanning exposure method.

Also, as shown in FIG. 10, the first converging group G₁is composed of, in the order from the reticle R side, a convex lens L₁₁, a concave lens L₁₂, a positive meniscus lens L₁₃with a concave surface to the reticle R, and a concave lens L₁₄, and the second converging group G₂is composed of a negative meniscus lens L₂₀with a concave surface to the reticle R and a concave, reflective mirror M₂. Further, the third converging group G₃is composed of a positive meniscus lens L₃₁, with a concave surface to the reticle R, a convex lens L₃₂, a positive meniscus lens L₃₃with a concave surface to the reticle R, a convex lens L₃₄, a convex lens L₃₅, a positive meniscus lens L₃₆with a convex surface to the reticle R, a concave lens L₃₇, a positive meniscus lens L₃₈with a concave surface to the reticle 10, a convex lens L₃₉, a negative meniscus lens L_3Awith a concave surface to the reticle R, a convex lends L_3B, a negative meniscus lens L_3Cwith a convex surface to the reticle R, a positive meniscus lens L_3Dwith a convex surface to the reticle R, and a negative meniscus lens L_3Ewith a convex surface to the reticle R.

A magnification of the total system is 1/4x (demagnification), a numerical aperture NA on the wafer W side (image side) is 0.5, and the object height is 22 mm. The optical system may be used in the one-shot exposure method.

The refractive lenses all are made of a kind of optical glass of fused quartz, which are corrected for axial and lateral chromatic aberrations for a wavelength band of 1 nm at the wavelength of 193 nm of the ultraviolet excimer laser light. Also, the optical system has excellent image-forming performance, as well corrected for spherical aberration, coma, astigmatism, and distortion up to a nearly zero aberration state.

Next Table 2 shows radii of curvature ri, surface separations d; and glass materials in the second embodiment of FIG. 10. In the following table, the fourteenth surface is a virtual plane for indicating the concave, reflective mirror in the optical path development.

TABLE 2

			Glass
i	r₁	d₁	Material	i	r₁	d₁	Material

0	—	2.2		24	−75.11	1.0
1	45.63	10.0	S₁O₂	25	319.62	9.4	S₁O₂
2	−183.72	12.0		26	−119.09	32.9
3	−91.37	6.0	S₁O₂	27	56.25	6.0	S₁O₂
4	47.38	11.7		28	−120.67	1.0
5	−221.10	10.0	S₁O₂	29	49.04	6.0	S₁O₂
6	−98.95	7.3		30	99.71	4.0
7	−110.83	6.0	S₁O₂	31	−48.50	5.6	S₁O₂
8	66.11	3.0		32	54.15	4.3
9	∞	40.0	S₁O₂	33	−361.48	8.2	S₁O₂
10	∞	77.7		34	−76.92	0.3
11	−78.96	7.2	S₁O₂	35	145.52	8.2	S₁O₂
12	−145.84	4.3		36	−71.54	3.7
13	−92.70	0.0		37	−37.19	6.7	S₁O₂
14	∞	4.3		38	−41.33	1.0
15	145.54	7.2	S₁O₂	39	194.05	8.0	S₁O₂
16	78.96	77.7		40	−62.51	1.0
17	∞	40.0	S₁O₂	41	17.77	5.7	S₁O₂
18	∞	4.0		42	13.88	2.5
19	−40.58	6.0	S₁O₂	43	17.52	8.0	S₁O₂
20	−36.69	1.0		44	93.95	0.5
21	212.61	10.0	S₁O₂	45	98.19	3.7	S₁O₂
22	−65.47	1.0		46	31.30	7.0
23	−134.41	6.0	S₁O₂

Also, FIG. 12 to 14 show longitudinal aberration diagrams of the second embodiment, FIG. 15 shows a lateral chromatic aberration diagram of the second embodiment, and FIG. 16 shows transverse aberration diagrams of the second embodiment. In particular, FIG. 12 shows spherical aberration of the second embodiment, FIG. 13 shows astigmatism of the second embodiment, and FIG. 14 shows distortion of the second embodiment. It is seen from these aberration diagrams that although the numerical aperture is large as 0.5 in this example, the aberrations are well corrected in a wide image circle region. Further, chromatic aberration is well corrected as well.

Third Embodiment

The third embodiment is a projection optical system with a magnification of 1/4x, suitably applicable to the projection exposure apparatus of the scanning exposure method. This third embodiment is an embodiment of the optical system using a partial mirror as well. As shown in FIG. 17, the partial mirror 12 is provided between the first converging group G₁and the second converging group G₂, and positioned so as to avoid being disposed on the optical axes AX1, AX2 of the first converging group G₁and the third converging group G₃. The partial mirror 12 has a first reflective surface 12a arranged obliquely to the optical axis AX1 of the first converging group G₁and a second reflective surface 12b opposite to the first reflective surface 12a.

FIG. 18 is an optical path development of the projection optical system of the third embodiment, and FIG. 19 shows an illumination region P10 on the reticle R. As shown in this FIG. 19, an arcuate illumination area P10 on the reticle R is illuminated by an illumination optical system 1. Then, in FIG. 18, light from patterns in the illumination area P10 on the reticle R travels through a first converging group G₁consisting of four refractive lenses and then passes beside the partial mirror 12. In other words, the first reflective surface 12a of the partial mirror 12 separates a part of the light from the first converging group G₁.

This passing light reaches a second converging group G₂consisting of a negative meniscus lens L₂₀and a concave, reflective mirror M₂, and light reflected by the second converging group G₂forms an intermediate image 11 of the patterns in the illumination area P10, near the partial mirror 12 (see FIG. 17). Then light from the intermediate image 11 is reflected by a second reflective surface 12b of the partial mirror 12 and thereafter passes through a third converging group G₃consisting of fourteen refractive lenses to form a second intermediate image of the patterns on the surface of wafer W. Also, an aperture stop 6 is placed on a Fourier transform plane in the third converging group G₃, i.e., between a convex lens L₃₄and a convex lens L.S. In this case, letting β be a projection magnification of from reticle R to wafer W, the reticle area R is scanned upward at a predetermined velocity V_Rand in synchronization therewith the wafer 11 is scanned upward at a velocity (β•V_R, thus performing exposure in the scanning exposure method.

Also, as shown in FIG. 18, the first converging group G₁is composed of, in the order from the reticle R side, a positive meniscus lens L₁₁with a convex surface to the reticle R, a negative meniscus lens L₁₂with a convex surface to the reticle R, a convex lens L₁₃, and a concave lens L₁₄, and the second converging group G₂is composed of a negative meniscus lens L₂₀with a concave surface to the reticle R, and a concave, reflective mirror M₂. Further, the third converging group G₃is composed of a negative meniscus lens L₃₁with a concave surface to the reticle R, a positive meniscus lens L₃₂with a concave surface to the reticle R, a positive meniscus lens L₃₃with a concave surface to the reticle R, a convex lens L₃₄, a convex lens L₃₅, a positive meniscus lens L₃₆with a convex surface to the reticle R, a concave lens L₃₇, a positive meniscus lens L₃₈with a concave surface to the reticle R, a convex lens L₃₉, a negative meniscus lens L_3Awith a concave surface to the reticle R, a convex lens L_3B, a negative meniscus lens L_3Cwith a convex surface to the reticle R, a positive meniscus lens L_3Dwith a convex surface to the reticle R, and a negative meniscus lens L_3Ewith a convex surface to the reticle R.

A magnification of the total system is 1/4x (demagnification), a numerical aperture NA on the wafer 11 side (image side) is 0.4, and the object height is 26 mm. The optical system may be used in the one-shot exposure method.

The refractive lenses all are made of a kind of optical glass of fused quartz, which are corrected for axial and lateral chromatic aberrations for a wavelength band of 1 nm at the wavelength of 193 nn of the ultraviolet excimer laser light. Also, the optical system has excellent image-forming performance, as well corrected for spherical aberration, coma, astigmatism, and distortion up to a nearly zero aberration state, and the good image-forming performance can be retained even if the optical system is proportionally enlarged two to three times.

Next Table 3 shows radii of curvature r₁, surface separations d₁and glass materials in the third embodiment of FIGS. 17 and 18. In the following table, the fourteenth surface is a virtual plane for indicating the concave, reflective mirror in the optical path development.

TABLE 3

			Glass
i	r₁	d₁	Material	i	r₁	d₁	Material

0	0	2.2		24	140.91	9.4	S₁O₂
1	38.17	10.0	S₁O₂	25	−191.84	32.9
2	76.72	12.0		26	92.51	8.0	S₁O₂
3	142.94	6.0	S₁O₂	27	−164.05	1.0
4	32.99	11.7		28	58.31	7.0	S₁O₂
5	36.73	10.0	S₁O₂	29	427.83	4.0
6	−337.52	6.5		30	−43.79	4.0	S₁O₂
7	−51.05	6.0	S₁O₂	31	1615.36	3.0
8	46.99	34.6		32	−48.72	8.2	S₁O₂
9	∞	30.3		33	−43.49	0.3
10	∞	69.6		34	165.95	8.2	S₁O₂
11	−87.27	8.0	S₁O₂	35	−82.87	3.7
12	−177.44	4.8		36	−43.10	6.7	S₁O₂
13	−101.17	0.0		37	−50.06	1.0
14	∞	4.8		38	75.16	7.0	S₁O₂
15	177.44	8.0	S₁O₂	39	−168.78	1.0
16	87.27	100.0		40	21.81	7.0	S₁O₂
17	∞	14.6		41	17.17	3.0
18	−36.36	8.0	S₁O₂	42	21.02	8.0	S₁O₂
19	−40.19	1.0		43	97.85	1.0
20	−579.38	6.0	S₁O₂	44	17.80	3.7	S₁O₂
21	−39.93	1.0		45	13.10	6.9
22	−280.59	8.0	S₁O₂
23	−108.42	1.0

Also, FIG. 20 to 22 show longitudinal aberration diagrams of the third embodiment, FIG. 23 shows a lateral chromatic aberration diagram of the third embodiment, and FIG. 24 shows transverse aberration diagrams of the third embodiment. In particular, FIG. 20 shows spherical aberration of the third embodiment, FIG. 21 shows astigmatism of the third embodiment, and FIG. 22 shows distortion of the third embodiment. It is seen from these aberration diagrams that although the numerical aperture is large as 0.4 in this example, the aberrations are well corrected in a wide image circle region. Further, chromatic aberration is well corrected as well.

Fourth Embodiment

The fourth embodiment is a projection optical system with a magnification of 1/4x, suitably applicable to the projection exposure apparatus of the one-shot exposure method (steppers etc.). This fourth embodiment is an embodiment as a modification of the optical system of FIG. 2 as well. FIG. 25 is an optical path development of the projection optical system of the fourth embodiment. As shown in FIG. 25, light from patterns on the reticle R travels through a first converging group G₁consisting of four refractive lenses and then enters a beam splitter surface 10Ca in a polarizing beam splitter 10C of a rectangular parallelepiped. The polarizing beam splitter 10C in the present embodiment is of a rectangular parallelepiped, and an incident surface (r₉) of the illumination light is wider by a region 13 than a projection image of the beam splitter surface 10Ca. This permits the polarizing beam splitter 10C in FIG. 25 to be constructed thinner than the polarizing beam splitter 10A in FIG. 4.

A light beam having passed through the beam sputter surface 10Ca passes through a quarter wave plate 9 (not shown in FIG. 25) to reach a second converging group G₂consisting of a negative meniscus lens L₂₀and a concave, reflective mirror M₂, and light reflected by the second converging group G₂travels through the quarter wave plate 9 (not shown FIG. 25), then is reflected by the beam splitter surface 10Ca in the polarizing beam splitter 10C, and forms an intermediate image 11 of the patterns at a position in the vicinity of the polarizing beam sputter 10C.

Then a light beam from the intermediate image 11 passes through a third converging group G₃consisting of fourteen refractive lenses to form a second intermediate image of the patterns on the surface of wafer W. In this case, an aperture stop 6 is placed on a Fourier transform plane in the third converging group G₃, that is, between a positive meniscus lens Lag and a convex lens L₃₉.

Also, as shown in FIG. 25, the first converging group G₁is composed of, in the order from the reticle R side, a positive meniscus lens L₁₁with a convex surface to the reticle R, a concave lens L₁₂, a convex lens L₁₃, and a concave lens L₁₄, and the second converging group G₂is composed of a negative meniscus lens Leo with a concave surface to the reticle R, and a concave, reflective mirror M₂. Further, the third converging group G₃is composed of a positive meniscus lens L₃₁with a concave surface to the reticle R, a convex lens L₃₂, a negative meniscus lens L₃₃with a concave surface to the reticle R, a convex lens L₃₄, a convex lends L₃₅, a positive meniscus lens L₃₆with a convex surface to the reticle R, a concave lens L₃₇a positive meniscus lens L₃₈with a concave surface to the reticle R, a convex lens L₃₉, a negative meniscus lens L_3Awith a concave surface to the reticle R, a convex lens L_3B, a negative meniscus lens L_3Cwith a convex surface to the reticle R, a positive meniscus lens L_3Dwith a convex surface to the reticle R, and a negative meniscus lens L_3Ewith a convex surface to the reticle R.

A magnification of the total system is 1/4x (demagnification), a numerical aperture NA on the wafer 11 side (image side) is 0.6, and the object height is 20 mm.

The refractive lenses all are made of a kind of optical glass of fused quartz, which are corrected for axial and lateral chromatic aberrations for a wavelength band of 1 nm at the wavelength of 193 nm of the ultraviolet excimer laser light. Also, the optical system has excellent image-forming performance, as well corrected for spherical aberration, coma, astigmatism, and distortion up to a nearly zero aberration state, and the good image-forming performance can be retained even if the optical system of FIG. 25 is proportionally enlarged two to three times.

Next Table 4 shows radii of curvature r₁, surface separations d₁and glass materials in the fourth embodiment of FIG. 25. In the following table, the fourteenth surface is a virtual plane for indicating the concave, reflective mirror in the optical path development.

TABLE 4

			Glass
i	r₁	d₁	Material	i	r₁	d₁	Material

0	0	2.2		24	−95.92	1.0
1	43.62	8.0	S₁O₂	25	426.51	8.4	S₁O₂
2	319.17	12.6		26	−155.92	32.9
3	−250.41	6.0	S₁O₂	27	65.87	7.0	S₁O₂
4	42.75	11.7		28	−861.00	1.0
5	1371.37	10.0	S₁O₂	29	45.43	6.0	S₁O₂
6	−83.00	7.3		30	144.51	6.0
7	−46.47	6.0	S₁O₂	31	−47.72	3.6	S₁O₂
8	73.09	5.0		32	69.88	4.3
9	∞	40.0	S₁O₂	33	−139.82	6.2	S₁O₂
10	∞	60.7		34	−63.75	3.3
11	−78.96	7.2	S₁O₂	35	164.20	7.2	S₁O₂
12	−145.84	4.3		36	−61.66	3.7
13	−92.70	0.0		37	−35.40	6.7	S₁O₂
14	∞	4.3		38	−42.77	1.0
15	145.84	7.2	S₁O₂	39	194.25	8.0	S₁O₂
16	78.96	60.7		40	−64.00	1.0
17	∞	40.0	S₁O₂	41	21.24	5.7	S₁O₂
18	∞	40.0		42	16.45	1.5
19	−48.19	6.0	S₁O₂	43	17.66	9.0	S₁O₂
20	−39.43	1.0		44	103.14	0.5
21	99.65	10.0	S₁O₂	45	60.80	3.7	S₁O₂
22	−69.37	1.0		46	40.36
23	−82.13	6.0	S₁O₂

Also, FIG. 26 to 28 show longitudinal aberration diagrams of the fourth embodiment, FIG. 29 shows a lateral chromatic aberration diagram of the fourth embodiment, and FIG. 30 shows transverse aberration diagrams of the fourth embodiment. In particular, FIG. 26 shows spherical aberration of the fourth embodiment, FIG. 27 shows astigmatism of the fourth embodiment, and FIG. 28 shows distortion of the fourth embodiment. It is seen from these aberration diagrams that although the numerical aperture is large as 0.6 in this example, the aberrations are well corrected in a wide image circle region. Further, chromatic aberration is well corrected as well.

It is preferred that the conditions of equations (1) to (6) be satisfied in the present invention, and thus, correspondence is next described between each embodiment as described above and the conditions of equations. First, Table 5 to Table 8 each show the radius of curvature r of the concave, reflective mirror M₂, focal lengths f₁of the i-th converging groups G₁(i=1 to 3), Petzval sums p₁, apparent refractive indices n₁, image magnifications β₁a magnification β₁₂of a combinational system of the first converging group G₁with the second converging group G₂, an image magnification β₃of the third converging group G₃, a Petzval sum p of the total system, and a magnification β of the total system in each embodiment as described above. Here, the total system is represented by G_T, and blocks for Petzval sum p, and image magnification β₁corresponding to the total system G_Tindicate the Petzval sum and image magnification of the total system, respectively.

TABLE 5

Specifications of first embodiment

	r	f₁	p₂	n₁	β₃	β₁₂

G₁	—	−197.278	−0.00887	0.60199	0.47913	−0.32802
G₂	−89.277	56.4187	−0.02674	−0.66285	−0.68461
G₃	—	−303.1767	0.03546	−0.09302	−0.76215	−0.76215
G_T	—	—	−0.00015	—	0.25004	0.25004

TABLE 6

Specifications of second embodiment

	r	f₁	p₄	n₁	β₃	β₁₂

G₁	—	−236.848	−0.00836	0.505038	0.4993	−0.33286
G₂	−92.707	58.5864	−0.02575	−0.662866	−0.66665
G₃	—	−206.083	0.03442	−0.140978	−0.750195	−0.750195
G_T	—	—	0.00032	—	0.20	0.24971

TABLE 7

Specifications of third embodiment

	r	f₁	p₄	n₁	β₁	β₃

G₁	—	−313.155	−0.00749	0.426342	0.53714	−0.33331
G₂	−101.	66.2825	−0.02395	−0.629935	−0.620527
	175
G₃	—	−696.956	0.03173	−0.045219	−0.75104	−0.75104
G_T	—	—	0.00029	—	0.25033	0.25033

TABLE 8

Specifications of fourth embodiment

	r	f₁	p₃	n₁	β₂	β₄

G₁	—	−105.504	−0.01079	0.87843	0.46888	−0.39211
G₂	−92.	58.586	−0.02575	−0.66287	−0.83627
	7068
G₃	—	−107.983	0.03733	−0.24808	−0.63959	−0.63959
G_T	—	—	0.00079	—	0.25079	0.25079

Further, based on Table 5 to Table 8, values are calculated for (P₁+P₃), P₂, |P₁+P₂+P₃|, |β₁₂|, |β₃|, and |β| in each embodiment, and the following Table 9 shows the calculated values.

TABLE 9

Table of correspondence conditions

Conditions
embodiment

	1	2	3	4

(1) p₁+ p₃> 0	0.02659	0.026606	0.02424	0.02654
(2) p₂< 0	−0.02674	−0.02575	−0.02395	−0.02575
(3) \|p₁+ p₂+ p₃\| < 0.1	0.00015	0.00031	0.00029	0.00079
(4) 0.1 ≦ \|β₁₂\| ≦ 0.5	0.32802	0.33286	0.33331	0.39231
(5) 0.25 ≦ \|β₃\| ≦ 2	0.76215	0.7502195	0.75104	0.63959
(6) 0.1 ≦ \|β\| ≦ 0.5	0.25004	0.24971	0.25033	0.25079

From this table, it is seen that either one of the above-described embodiments satisfies the conditions of equations (1) to (6)

The embodiments as described above employed quartz as a glass material for forming the refractive optical system, but another optical glass such as fluorite may be used.

Next, an embodiment of a common exposure apparatus using the catadioptric projection optical system 5 of the present invention. In this embodiment, as shown in FIG. 31, the first converging group G₁includes a reflector 14 changing a traveling direction of light that travels in the first converging group G₁. Therefore, the optical axis AX1 of the first converting group G₁is constituted by optical axes AX1a and AX1b as shown in FIG. 31. The techniques relating to an exposure apparatus using a catadioptric projection optical system is described, for example, in Japanese Laid-Open Patent Application No. 5-72478, or the like.

Thus, the present invention is by no means limited to the above-described embodiments, but may employ a variety of constitutions within a range not departing from the essence of the present invention.

Since the catadioptric projection optical system of FIG. 2 is so arranged that the image is once formed between the concave, reflective mirror and the second plane (image plane), there are advantages that a compact prism type beam splitter can be used and that an optical path between the concave, reflective mirror and the image plane can be set long. Accordingly, deterioration may be reduced for image-forming characteristics due to nonuniformity of characteristics in the semitransparent surface of beam splitter, and the working distance can be extended. In other words, the catadioptric projection optical system can secure a sufficiently long optical path to the wafer (image plane P2), of the illumination light reflected by the concave, reflective mirror M₂, because an intermediate image is formed between the mirror M₂and the second image-forming optical system G₃. Therefore, a number of refractive lenses can be arranged in the optical path to achieve satisfactory image-forming performance. This also caused an effect that a distance between a wafer-side end face of refractive lens and the wafer, which is the working distance, was long enough.

Also, different from the ring field optical system for projecting only an annular part using an off-axis light beam, the optical system of the invention includes an advantage that it can employ the one-shot exposure method under a high numerical aperture.

Since an aperture stop can be placed in the second image-forming optical system, the optical system of the invention can enjoy an advantage that the a value being a coherence factor can be freely controlled.

In the case of the conventional catadioptric systems, adjustment was difficult because of eccentricity of optical axis, and thus, image-forming performance as designed was rarely able to be achieved. In contrast, the catadioptric projection optical system according to the present invention permits independent adjustment of the first image-forming optical system and the second image-forming optical system, and after the adjustment the two image-forming optical systems may be set with the optical axis approximately vertical, which facilitates adjustment of eccentricity etc.

Since the image magnification by the first image-forming optical system can be freely selected, an excellent optical performance state can be realized.

In this case, an advantage of a further size reduction of the beam splitter can be attained by forming the intermediate image inside the prism type beam splitter.

Next, because the second catadioptric projection optical system of FIG. 17 is so arranged that the image is once formed between the concave, reflective mirror and the second plane (image plane), there are advantages that a compact partial mirror can be used and that the optical path between the concave, reflective mirror and the image plane can be set long. Further, when the partial mirror is used, the best image region is, for example, arcuate or slit as eccentric from the optical axis. Such an image region is suitable for the projection exposure apparatus of the scanning exposure method.

Next, when the conditions of equations (1) to (3) are satisfied, the Petzval sum of the total optical system readily becomes nearly 0, so that the projection image surface becomes approximately fiat. Further, when the conditions of equations (4) and (5) are satisfied, a magnification balance becomes reasonable, and the optical system can be easily constructed.

From the invention thus described, it will be obvious that the invention may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims. The basic Japanese Application No. 6-90837 filed on Apr. 28, 1994 is hereby incorporated by reference.

Claims

1. A catadioptric projection optical system for projecting an image of a pattern of a first surface onto a second surface, said catadioptric projection optical system comprising:

a first image-forming optical system for forming an intermediate image of the pattern of said first surface, said first image-forming optical system including:

a first group with a positive refractive power, comprising a refractive lens component, for converging a light beam from the pattern of said first surface;

a second group with a positive refractive power, comprising a concave, reflective mirror for reflecting a light beam from said first group, for forming said intermediate image of the pattern of said first surface; and

a beam splitting optical system for changing a traveling direction of one of a light beam from said first group and a reflected light beam from said concave, reflective mirror; and

a second image-forming optical system for forming an image of said intermediate image on said second surface.

2. A catadioptric projection optical system according to claim 1, wherein said beam splitting optical system is defined as a beam splitter of which a beam splitter surface is arranged obliquely to an optical axis of said first group, said beam splitter disposed on the optical axis of said first group and provided on the optical path between said concave, reflective mirror and said second image-forming optical system.

3. A eatadioptric projection optical system according to claim 1, wherein

said beam splitting optical system is defined as a partial mirror of which a first reflective surface is arranged obliquely to an optical axis of said first group, said partial mirror provided between said first group and said second group so as to avoid being disposed on the optical axis of said first group, and wherein

the light beam converged by said second group is guided to said second image-forming optical system by a second reflective surface of said partial mirror, said second reflective surface being opposite to said first reflective surface of said partial mirror.

4. A catadioptric projection optical system according to claim 2, wherein

said beam splitter is a prism-type shaped.

5. A catadioptric projection optical system according to claim 4, wherein

said beam splitter is one of a polarizing beam splitter and a partially-reflective beam splitter.

6. A catadioptric projection optical system for projecting an image of a pattern of a first surface onto a second surface, comprising:

a first image-forming optical system for forming an intermediate image of the pattern of said first surface, and a second image-forming optical system for forming an image of said intermediate image on said second surface, wherein said first image-forming optical system includes:

a beam sputter for separating a part of a light beam from said first group by a beam-splitter surface arranged obliquely to an optical axis of said first group, said beam splitter disposed on the optical axis of said first group; and

a second group with a positive refractive power, comprising a concave, reflective mirror for reflecting the light beam separated by said beam splitter, for forming said intermediate image of the pattern between the concave, reflective mirror and the second image-forming optical system, said beam splitter provided between said concave, reflective mirror and said second image-forming optical system.

7. A catadioptric projection optical system according to claim 6, wherein

said beam splitter is a prism-type shaped, and said intermediate image of the pattern of said first surface is formed inside said beam splitter.

8. A catadioptric projection optical system according to claim 6, wherein

the following conditions are satisfied:

p₁+p₃>0, p₂<0, and |p₁+p₂+p₃|<0.1,

where p₁, p₂, and p₃are individual Petzval's sums of said first group, second group, and second image-forming optical system; and

wherein the following conditions are satisfied:

0.1<|β₁₂|<0.5 and 0.25<|β₃|<2,

where β₁₂is a magnification of from the pattern on said first surface to said intermediate image and β₃is a magnification of from said intermediate image to said image on the second surface.

9. A catadioptric projection optical system according to claim 7, wherein

10. A catadioptric projection optical system for projecting an image of a pattern of a first surface onto a second surface, comprising a first image-forming optical system for forming an intermediate image of the pattern of said first surface, and a second image-forming optical system for forming an image of said intermediate image on said second surface, wherein said first image-forming optical system includes:

a partial mirror for separating a part of a light beam from said first group by a first reflective surface arranged obliquely to an optical axis of said first group, said partial mirror-positioned so as to avoid being disposed on the optical axis of said first group; and

a second group of a positive refractive power, comprising a concave, reflective mirror for reflecting the light beam of which the part is separated by said first reflective surface of said partial mirror, for forming said intermediate image of the pattern between said concave, reflective mirror and said second image-forming optical system, said partial mirror provided between said first group and said second group,

wherein the light beam converged by said second group is guided to said second image-forming optical system by a second reflective surface of said partial mirror, said second reflective surface being opposite to said first reflective surface of said partial mirror.

11. A catadioptric projection optical system according to claim 10, wherein

the following conditions are satisfied:

p₁+p₃>0, p₂<0, and |p₁+p₂+p₃|<0.1,

wherein the following conditions are satisfied:

0.1<|β₁₂|<0.5 and 0.25<|β₃<2,

12. An exposure apparatus comprising:

a stage allowing a photosensitive substrate to be held on a main surface thereof,

an illumination optical system for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern of a mask onto said substrate; and

a catadioptric projection optical system provided between a surface on which the mask is disposed and said substrate, for projecting an image of the pattern of said mask onto said substrate, said catadioptric projection optical system including:

a first image-forming optical system for forming an intermediate image of the pattern of said mask, said first image-forming optical system having:

a first group with a positive refractive power, comprising a refractive lens component, for converging a light beam from the pattern of said mask;

a second group with a positive refractive power, comprising a concave, reflective mirror for reflecting a light beam from said first group, for forming said intermediate image of the pattern of said mask; and

a beam splitting optical system for changing a traveling direction of one of a light beam from said first group and a reflected light from said concave, reflective mirror; and

a second image-forming optical system for forming an image of said intermediate image on said substrate.

13. An exposure apparatus according to claim 12, wherein

said beam splitting optical system is defined as a beam splitter of which a beam splitter surface is arranged obliquely to an optical axis of said first group, said beam splitter disposed on the optical axis of said first group and provided on the optical path between said concave, reflective mirror and said second image-forming optical system.

14. An exposure apparatus according to claim 12, wherein

15. An exposure apparatus according to claim 13, wherein said beam splitter is a prism-type shaped.

16. An exposure apparatus according to claim 15, wherein

17. An exposure apparatus comprising:

a stage allowing a photosensitive substrate to be held on a main surface thereof;

an illumination optical system for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern of a mask onto the substrate; and

a catadioptric projection optical system provided between a surface on which said mask is disposed and said substrate, for projecting an image of the pattern of said mask onto said substrate, comprising a first image-forming optical system for forming an intermediate image of the pattern of said mask, and a second image-forming optical system for forming an image of said intermediate image on said substrate, wherein said first image-forming optical system includes,

a beam splitter for separating a part alight beam from said first group by a beam-splitter surface arranged obliquely to an optical axis of said first group, said beam splitter disposed on the optical axis of said first group; and

a second group with a positive refractive power, comprising a concave, reflective mirror for reflecting the light beam separated by said beam splitter, for forming said intermediate image of the pattern between the concave, reflective mirror and the second image-forming optical system, said beam sputter provided between said concave, reflective mirror and said second image-forming optical system.

18. An exposure apparatus according to claim 17, wherein

19. An exposure apparatus according to claim 17, wherein the following conditions are satisfied:

p₁+p₂>0, p₂<0, and |p₁+p₂+p₃|<0.1,

wherein the following conditions are satisfied:

0.1<|β₁₂|<0.5 and 0.25<|β₃|<2,

20. An exposure apparatus according to claim 18, wherein

said beam sputter is one of a polarizing beam splitter and a partially-reflective beam splitter.

21. An exposure apparatus comprising:

a catadioptric projection optical system provided between a surface on which said mask is disposed and said substrate, for projecting an image of the pattern of said mask onto said substrate, comprising a first image-forming optical system for forming an intermediate image of the pattern of said mask, and a second image-forming optical system for forming an image of said intermediate image on said substrate, wherein said first image-forming optical system includes:

a partial mirror for separating a part of a light beam from said first group by a first reflective surface arranged obliquely to an optical axis of said first group, said partial mirror positioned so as to avoid being disposed on the optical axis of said first group; and

22. An exposure apparatus according to claim 21, wherein the following conditions are satisfied:

p₁+p₃>0, p₂<0, and |p₁+p₂+p₃|<0.1,

wherein the following conditions are satisfied:

0.1<|β₁₂|<0.5 and 0.25<|β₂|<2,

23. A catadioptric projection optical system for projecting an image of a pattern of a first surface onto a second surface, said catadioptric projection optical system comprising:

a first image-forming optical system, ;

a second image-forming optical system, ;and a partial mirror,

wherein

said first image-forming optical system includes:

a first group with a positive refractive power, said first group comprising a refractive lens component; and

a second group with a negative positive refractive power, said second group comprising a concave, reflective mirror,

said second image-forming optical system comprises a dioptric imaging system which includes a refractive lens component and an aperture stop,

light from said first surface passes through in order said first group, said second group, said partial mirror, and said second image-forming optical system and thereafter said light reaches said second surface,

said partial mirror is positioned so as to avoid disposing on an optical path of light that travels from said first group to said second group and is disposed on an optical path of light that travels from said second group to said second image-forming optical system, and

an intermediate image of said pattern of said first surface is formed at a predetermined position of said optical path of light that travels from said second group to said second image-forming optical system, and

the dioptric imaging system of said second image-forming optical system extends from the intermediate image of said pattern to a second image formed by said second image-forming optical system at said second surface.

24. A catadioptric projection optical system according to claim 23, wherein

the following conditions are satisfied:

p₁+p₃>0, p₂<0, and |p₁+p₂+p₃|<0.1,

wherein the following conditions are satisfied:

0.1<|β₁₂|<0.5 and 0.25<|β₃|<2,

25. A fabricating device method comprising:

preparing a mask with a predetermined pattern;

illuminating said mask with exposure light having a predetermined wavelength; and

projecting a secondary image of said pattern onto a photosensitive substrate through a catadioptric optical system according to claim 1.

26. A catadioptric imaging optical system used in a projection exposure apparatus that transfers a pattern on a mask onto a substrate, comprising:

a first imaging optical sub-system arranged in an optical path between the mask and the substrate, said first imaging optical sub-system comprising

a first group with a lens, and

a second group with a concave mirror,

wherein said first imaging optical sub-system forms an intermediate image of the pattern;

a second imaging optical sub-system arranged in an optical path between said first imaging optical sub-system and the substrate, wherein said second imaging optical sub-system forms an image of the intermediate image on the substrate and comprises a dioptric imaging system which extends from the intermediate image to the image of the intermediate image; and

an optical path deflecting member arranged between said first group and said second group of said first imaging optical sub-system, wherein said optical path deflecting member changes a direction of either a light beam from said first group or a light beam reflected by the concave mirror.

27. A catadioptric imaging optical system according to claim 26, wherein said second imaging sub-system comprises an optical axis along a straight line.

28. A catadioptric imaging optical system according to claim 27, wherein said first group has an optical axis, and wherein said optical path deflecting member comprises a beam splitter surface that is inclined with respect to the optical axis of said first group.

29. A catadioptric imaging optical system according to claim 28, wherein said optical path deflecting member comprises a prism-type beam splitter.

30. A catadioptric imaging optical system according to claim 27, wherein said first group has an optical axis, wherein said optical path deflecting member comprises a reflection member that is arranged at a region not including the optical axis of said first group, and wherein the reflection member comprises a reflection surface inclined with respect to the optical axis of said first group.

31. A catadioptric imaging optical system according to claim 27, wherein said first group has a positive refractive power and said second group has a positive power.

32. A catadioptric imaging optical system according to claim 26, wherein the following conditions are satisfied:

p_1+p _3>0,

|p_1+p _2+p _3|<0.2,

0.1<|β_{12|0.5, and}

0.25<|β_3|<2,

where

p_{1, p} _{2 and p} _{3 are individual Petzval's sums of said first group, said second group, and said second imaging optical system,}

β_{12 is a magnification of an optical system positioned in an optical path from the mask to the intermediate image, and}

β_{3 is a magnification of an optical system positioned in an optical path from the intermediate image to the substrate.}

33. A projection exposure apparatus that transfers a pattern on a mask onto a substrate, comprising:

a catadioptric imaging optical system according to claim 26, wherein said catadioptric imaging optical system forms an exposure region at a position out of an optical axis of said second imaging sub-system.

34. A projection exposure apparatus according to claim 31, wherein the reticle and the substrate are scanned at different speeds corresponding to the magnification of said catadioptric imaging optical system.

35. A method of imaging a pattern on a mask onto a substrate, comprising:

guiding a light from the mask to a first group, wherein the first group comprises a lens;

guiding the light from the first group to a second group, wherein the second group comprises a concave mirror;

forming an intermediate image of the pattern based on the light from the second group;

guiding the light from the intermediate image to a dioptric imaging sub-system;

forming an image of the intermediate image on the substrate based on the light from the dioptric imaging sub-system, the dioptric imaging sub-system extending from the intermediate image to the formed image of the intermediate image; and

changing a direction of either the light beam from the first group or the light beam reflected by the concave mirror, in a space between the first group and the second group.

36. A catadioptric imaging optical system used in a projection exposure apparatus that transfers a pattern on a mask onto a substrate, comprising:

a first group with a lens, and

a second group with a concave mirror,

a second imaging optical sub-system arranged in an optical path between said first imaging optical sub-system and the substrate, wherein said second imaging optical sub-system forms an image of the intermediate image on the substrate; and

an optical path deflecting member arranged between said first group and said second group of said first imaging optical sub-system, wherein said optical path deflecting member changes a direction of either a light beam from said first group or a light beam reflected by the concave mirror,

wherein the following conditions are satisfied:

p_1+p _3>0,

|p_1+p _2+p _3<0.2,

0.1<|β_{12|<0.5, and}

0.25<|β_3|<2,

where

37. A catadioptric imaging optical system used in a projection exposure apparatus that transfers a pattern on a mask onto a substrate, comprising:

a first group with a lens, and

a second group with a concave mirror,

wherein said first imaging optical sub-system forms an intermediate image of the pattern:

wherein

said second imaging sub-system comprises an optical axis along a straight line

said first group has a positive refractive power and said second group has a positive power, and

the reticle and the substrate are scanned at different speeds corresponding to the magnification of said catadioptric imaging optical system.L