WO1996012055A1 - Apparatus for growing metal oxides using organometallic vapor phase epitaxy - Google Patents
Apparatus for growing metal oxides using organometallic vapor phase epitaxy Download PDFInfo
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- WO1996012055A1 WO1996012055A1 PCT/US1994/011791 US9411791W WO9612055A1 WO 1996012055 A1 WO1996012055 A1 WO 1996012055A1 US 9411791 W US9411791 W US 9411791W WO 9612055 A1 WO9612055 A1 WO 9612055A1
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- WIPO (PCT)
- Prior art keywords
- composition
- gaseous phase
- gas flow
- flow
- metal oxide
- Prior art date
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 49
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 49
- 238000000927 vapour-phase epitaxy Methods 0.000 title description 7
- 125000002524 organometallic group Chemical group 0.000 title description 5
- 239000007792 gaseous phase Substances 0.000 claims abstract description 33
- 239000007789 gas Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 230000008021 deposition Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 34
- 150000001875 compounds Chemical class 0.000 claims description 25
- 239000007787 solid Substances 0.000 claims description 19
- 239000002243 precursor Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 239000012071 phase Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000009833 condensation Methods 0.000 claims 2
- 230000005494 condensation Effects 0.000 claims 2
- 238000009834 vaporization Methods 0.000 claims 2
- 230000008016 vaporization Effects 0.000 claims 2
- 239000010409 thin film Substances 0.000 abstract description 22
- 238000004458 analytical method Methods 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 35
- 238000000151 deposition Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 8
- 238000004549 pulsed laser deposition Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000002887 superconductor Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000004949 mass spectrometry Methods 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 MgO Chemical compound 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052755 nonmetal Chemical group 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- 206010035148 Plague Diseases 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229940086226 cold spot Drugs 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000005493 condensed matter Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Definitions
- the present invention relates to growing metal oxide films, including multicomponent metal oxide films such as high temperature superconductors (HTSs) .
- the present invention particularly relates to an improved method and apparatus for growing metal oxide and multicomponent metal oxide films using organometallic vapor phase epitaxy (OMVPE) .
- OMVPE organometallic vapor phase epitaxy
- Multicomponent metal oxides are those metal oxides which contain two or more different metals. Examples of multicomponent metal oxides include: HgBaCuO, YBaCuO, BiSrCaCuO, Tl-CaBaCuO, the perovskites ABO-,, where A and B include La, Sr, Al, Ta, Ti, etc. . . ., (i.e.
- Certain multicomponent metal oxides are superconducting and some are superconducting at high temperatures. Metal oxides and multicomponent metal oxides may be used as substrates on which superconducting films are grown.
- Superconductivity refers to that state of metals and alloys in which the electrical resistivity is zero when the specimen is cooled to a sufficiently low temperature.
- the temperature at which a specimen undergoes a transition from a state of normal electrical resistivity to a state of superconductivity is known as the critical temperature (T c ) .
- T c critical temperature
- attaining the T. of known superconducting materials required the use of liquid helium and expensive cooling equipment.
- a superconducting material having a T c of 30K was an- nounced. See, e.g., Bednorz and Muller, Possible High Tc Superconductivity in the Ba-La-Cu-0 System, 64 Z. Phys . B- Condensed Matter 189 (1986) . Since that announcement superconducting materials having higher critical tempera ⁇ tures have been discovered.
- superconducting materials having critical temperatures in excess of the boiling point of liquid nitrogen, 77K at atmospheric pressure have been disclosed.
- Superconducting compounds consisting of combinations of alkaline earth metals and rare earth metals such as barium and yttrium in conjunction with copper (known as "YBCO superconductors") were found to exhibit superconduc ⁇ tivity at temperatures above 77K. See, e.g., Wu, et al . , Superconductivity at 93K in a New Mixed-Phase Y-Ba-Cu-0 Compound System at Ambient Pressure, 58 Phys. Rev. Lett. 908 (1987) . In addition, high temperature superconducting compounds containing bismuth have been disclosed. See, e.g., Maeda, 'A New High-Tc Oxide Superconductor Without a Rare Earth Element, 37 J.
- HTSs high temperature superconductors
- the earliest forms were preparation of bulk materials, which were sufficient to determine the existence of the superconducting state and phases. More recently, thin films on various sub- strates have been prepared which have proved to be useful for making practical superconducting devices.
- the sub ⁇ strate on which a thin film HTS is grown may be a metal oxide.
- both the thin film HTS and the sub- strate on which it is grown may be multicomponent metal oxides.
- PLD pulsed laser deposition
- MBE molecular beam epitaxy
- OMVPE organometallic vapor phase epitaxy
- Pulsed laser deposition was one of the first deposition techniques. See, e.g., Dijkkamp, et. al. , Preparation of Y-Ba-Cu Oxide Superconductor Thin Films Using Pulsed Laser Evaporation Form High T c Bulk Material, 51 Appl. Phys. Lett. 619 (1987) .
- PLD was one of the most successful deposition techniques, particularly for the YBa 2 Cu 3 0 7 . ⁇ high temperature superconducting com- pound. See, e.g., Hubler ed. , Pulsed Laser Deposition, 17 MRS Bulletin, No. 2, 26 (1992) .
- PLD has been used to produce very high quality films on up to two inch wafers, but users have not been able to eliminate film defects which result from laser beam interaction with target material.
- the only way to adjust the resulting film composition is to compound a new target.
- Sputtering is a relatively simple in situ growth technique which may be used to produce films with very few non-deposition related film defects.
- on axis sputtering as with PLD, the composition of the growing film can only be changed by compounding a new target.
- off axis sputtering where multiple targets may be available, no consistent active composition control has been demonstrat ⁇ ed.
- both on axis and off axis sputtering suffer from extremely low film deposition rates.
- MBE Molecular beam epitaxy
- Organometallic vapor phase epitaxy is a technique for growing metal oxide and multicomponent metal oxide films. Film growth by this basic technique is known by various names in addition to OMVPE, including chemical vapor deposition (CVD) , vapor phase epitaxy (VPE) , metalorganic CVD (MOCVD) , and plasma enhanced CVD (PECVD) , among others. For clarity, OMVPE will be used throughout the present specification.
- OMVPE similar to the case of MBE, has for several years been used to produce thin films of only moderate quality. Early work was on relatively small area wafers deposited at high temperatures. See, e.g., Yamane, et. al . , Y-Ba-Cu-0 Superconducting Films Prepared On SrTi0 3 Substrates By Chemical Vapor Deposition, 53 Appl. Phys. Lett. 1548 (1988) . OMVPE has progressed to larger area wafers (three inch) at reduced temperatures.
- the basic OMVPE technique includes flowing a gaseous phase of metal containing compounds in the vicinity of a heated substrate wafer whereby the various gas molecules may contact the surface of the wafer. Upon contact with the heated wafer surface, certain gas molecules react with the surface and decompose into constituent metal atoms and non-metal atoms. The metal atoms become incorporated as a solid phase on the surface (i.e. become the growing film) . The non-metal atoms remain in a gaseous phase and may be removed.
- Various modifications of this general process include operating at different gas pressures, using different types of metal containing compounds, and adding non-thermal energy sources to decompose the metal compounds (e.g.
- OMVPE for growing metal oxide and multicomponent metal oxide films provides a variety of benefits over other methods (e.g. laser ablation) .
- OMVPE allows for the growth of such films on large areas and is scalable (i.e. it can be used to coat multiple wafers at the same time) .
- major problems plague researchers in this field.
- One of the biggest problems is reproducibility, especially for multicomponent metal oxide films.
- HTS films are complex materials the growth of which must be highly controlled to achieve desirable results such as uniformity within the film and reproducibility of the overall film composition.
- mass spectroscopy has been used for closed loop composition measurement and feedback in the MBE growth of HTS compounds.
- Mass spectroscopy is uniquely suited to the high vacuum environment used in the MBE process.
- mass spectroscopy has a very large dynamic range for measuring trace quantities of materials, of particular interest when a source vapor is heavily diluted in a carrier gas.
- OMVPE which typically operates at considerably higher pressures than MBE is complicated by the need to suitably reduce the pressure in the vicinity of the mass spectrometer head for successful operation.
- a very simple approach to measuring composition in situ and controlling source fluxes in the OMVPE process for deposition of HTS materials has been developed which incorporates quartz crystal deposition rate monitors.
- TBP Tertiarybutylphosphine
- the present invention provides an apparatus and methods for the controlled growth of metal oxides and multicomponent metal oxides, including HTS compounds, using OMVPE.
- the apparatus includes a gas delivery system for control of the gaseous phase by enabling control of the introduction of molecules into the gaseous phase.
- the apparatus allows for the measurement and feedback of the temperature, flow, and pressure of the gaseous phase.
- the apparatus is designed specifically to facilitate the use of low volatility precursor compounds.
- the apparatus includes a mass spectrograph for compositional analysis of gaseous material.
- the apparatus comprises a feed-back loop system whereby compositional information regarding the gaseous phase is fed into a controller, such as a computer, which in turn may regulate the pressure, flow, and temperature of the system to achieve a desired compo ⁇ sition of the gaseous phase.
- a controller such as a computer
- Fig. 1 is a block diagram showing an exemplary appara ⁇ tus of the present invention.
- Fig. 2 is a block diagram showing, in general, the overall system of the present invention.
- HTS high temperature superconducting
- the present invention comprises a method and apparatus which enable a controlled flow and pressure of a gaseous phase of metal-containing-molecules to be introduced into a reaction chamber (enabling deposition on a substrate and, therefore, growth of a metal oxide or multicomponent metal oxide thin film) , or into an analysis chamber (enabling compositional analysis) , or into both.
- the apparatus also allows adjustment of the gaseous phase flow, pressure, and temperature into the reaction chamber based upon the results of the compositional analysis in real time. To achieve reproducible deposition of multicomponent metal oxide thin films, there must be control over both the composition of the gaseous phase and the decomposition of any material which is the source for the molecules in the gaseous phase.
- composition of the gaseous phase is not controllable, it is not consistently repro ⁇ ducible and any metal oxide or multicomponent metal oxide film grown from that gaseous phase is also not consistent ⁇ ly reproducible. Similarly, if there is no control over the decomposition of the materials which are the source for the gaseous phase, then the composition of the gaseous phase is not controlled.
- the desirability of controlling the composition of the gaseous phase during OMVPE is of primary importance in maintaining solid phase composition when using low vola- tility metalorganic sources.
- the composition of the gaseous phase must be controllable as a function of time, so growth and composition of the metal oxide film are uniform and reproducible.
- the methods and apparatus of the present invention enable controlled growth of metal oxide and multicomponent metal oxide thin films which are uniform and reproducible.
- the apparatus of the present invention basically comprises an inert gas source 2, an oxidizer source 4, and at least one solid source 6.
- the solid source 6 has provision for flow control via a solid source mass flow controller 8, for pressure control via a pressure control needle valve 10 and a Baratron pressure controller 11, and for temperature control via a solid source oven 12, all of which may be adjusted during thin film growth. Such adjustment will, generally, be based on the compositional measurements performed in an analysis chamber (described below) . It is preferable that the apparatus of the present invention include more than one solid source 6, each with appropriate flow, pressure, and temperature control .
- the oxidizer source 4 preferably provides flow of 0 2 or N 2 0 gas into the solid source mass flow controller 8. Thus, the flow out of the oxidizer source 4 enables control of the solid source mass flow.
- the inert gas source 2 preferably provides flow of N, or Ar gas.
- the inert gas flow is preferably split to provide flow through a balance mass flow controller 14 and a vent mass flow controller 16.
- the balance inert gas flow provides inert gas to the system to enable the system to be pressure balanced between a reactor chamber 22 and vent 24, preferably through the use of a differential Baratron chamber-vent pressure controller 17.
- the vent inert gas flow provides inert gas to a valve 18 to enable the valve 18 to provide flow balanced switching of inert gas to the vent 24 or to purge the reactor 22.
- the solid source 6 preferably provides metal-contain- ing-compounds to be vaporized and carried to a heated substrate wafer for deposition.
- metal-contain ⁇ ing-compounds include the 2, 2, 6, 6-tetramethyl, 3 , 5- heptanedianato (THD) complexes of yttrium, barium and copper. These metal-containing-compounds are all solids at room temperature and relatively nonvolatile. See Kumarschmidt, et al., 5 J. Sup., No. 2 (1992) .
- the metal-containing-compounds are preferably vaporized at low pressure (about 1-100 torr) , elevated temperature (about 100-250°C) , and high flow rates (about 100-2000 seem) . Once the metal-containing-compounds are vaporized, gas flow from the oxidizer source 4 carries the vaporized compounds to the valve 18, to an analyzer 20 (preferably dual stage mass spectrograph) , or both.
- the gaseous metal-containing-compounds in the valve 18 may be directed in a flow balanced manner between the vent 24 and the reactor 22.
- the reactor 22 preferably contains a heated substrate wafer which the gaseous metal compounds may contact and thereby decompose to enable any metal atoms in the compounds to become incorporated as a solid phase on the substrate.
- the carrier flow may then carry any non-incorporated materials through the scrubber vent 24 and out of the apparatus.
- the apparatus includes a by-pass line 25 enables flow from the valve 18 to by-pass the reactor 22 and flow directly into the scrubber 24 and out of the apparatus.
- the apparatus is provided with a heating mantle 26 which preferably enables substantially uniform heating (i.e. +/- 2° C) of all lines and components of the apparatus through which gaseous metal-containing-compounds may be carried.
- the heating mantle 26 prevents any "cold-spot" condensa ⁇ tion of the metal-containing-compounds.
- the apparatus be capable of accommodating high flow rates (e.g. about 100- 2000 seem) especially through any piping through which gaseous metal-containing-compounds may flow. Therefore, it is preferable that piping 28 (from the solid source 10 to the valve 18) and piping 30 (from the valve 18 to the reactor 22) have a diameter of about 0.25 to 1.00 inches, with diameters of 0.375 to 1.00 inches being typical.
- the apparatus preferably includes a dual stage mass spectrometer 20 comprising a first stage chamber 32 (which is preferably within the heating mantle 26) and a second stage chamber 34 (which is preferably not within the heating mantle 26) .
- Preceding each of the chambers 32 and 34 is, preferably, a 1000:1 aperture 36, which will suitably reduce the pressure from 1-100 torr in the gas line 28 to approximately 10 "6 torr in the second stage chamber 34.
- the mass spectrometer head resides in chamber 34.
- the mass spectrometer 20 preferably provides compositional analysis of the gaseous phase to a control source 44.
- the control source is also provided with information regarding the flow, pressure, and temperature of the overall system and may be used to adjust the flow, pressure, temperature, or any combination, as indicated by the compositional analysis provided by the mass spectrome- ter 20.
- the apparatus preferably in ⁇ cludes a turbo molecular pump 38 and two rotary vane pumps 40a and 40b.
- the pumps 38 and 40b enable the mass spec ⁇ trometer 20 to operate at low pressures (e.g. preferably between 10 "5 -10 "6 torr) .
- pump 40a draws gas flow from the main system through scrubbers 24 and 42 a and b which clean the gas before it exits the system.
- the apparatus includes several solid sources 6.
- Each solid source 6 flows into a manifold (not shown) which enables flow control to the mass spectrometer 20 such that sepa ⁇ rate analysis of individual precursor molecules may be accomplished.
- the manifold would enable the selection of gas to be analyzed.
- the gas from each solid source may be analyzed separately or in any combination.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/136,215 US5458086A (en) | 1993-10-13 | 1993-10-13 | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
JP8513177A JPH10509939A (en) | 1993-10-13 | 1994-10-17 | Metal oxide growth equipment using metalorganic vapor phase epitaxy |
EP94931878A EP0783599A4 (en) | 1993-10-13 | 1994-10-17 | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
CA002201905A CA2201905A1 (en) | 1993-10-13 | 1994-10-17 | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/136,215 US5458086A (en) | 1993-10-13 | 1993-10-13 | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996012055A1 true WO1996012055A1 (en) | 1996-04-25 |
Family
ID=22471866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1994/011791 WO1996012055A1 (en) | 1993-10-13 | 1994-10-17 | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
Country Status (5)
Country | Link |
---|---|
US (2) | US5458086A (en) |
EP (1) | EP0783599A4 (en) |
JP (1) | JPH10509939A (en) |
CA (1) | CA2201905A1 (en) |
WO (1) | WO1996012055A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US5458086A (en) * | 1993-10-13 | 1995-10-17 | Superconductor Technologies, Inc. | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
US6716795B2 (en) * | 1999-09-27 | 2004-04-06 | Ut-Battelle, Llc | Buffer architecture for biaxially textured structures and method of fabricating same |
JP3339554B2 (en) | 1995-12-15 | 2002-10-28 | 松下電器産業株式会社 | Plasma display panel and method of manufacturing the same |
US6162488A (en) * | 1996-05-14 | 2000-12-19 | Boston University | Method for closed loop control of chemical vapor deposition process |
US6610169B2 (en) * | 2001-04-21 | 2003-08-26 | Simplus Systems Corporation | Semiconductor processing system and method |
US7867905B2 (en) * | 2001-04-21 | 2011-01-11 | Tegal Corporation | System and method for semiconductor processing |
US6655408B2 (en) | 2001-06-13 | 2003-12-02 | Applied Materials, Inc. | Tunable ramp rate circuit for a mass flow controller |
US20030054105A1 (en) * | 2001-08-14 | 2003-03-20 | Hammond Robert H. | Film growth at low pressure mediated by liquid flux and induced by activated oxygen |
US6733621B2 (en) * | 2002-05-08 | 2004-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Venting apparatus and method for vacuum system |
AU2003280994A1 (en) * | 2002-07-10 | 2004-02-02 | Tokyo Electron Limited | Film forming apparatus |
US20050223984A1 (en) * | 2004-04-08 | 2005-10-13 | Hee-Gyoun Lee | Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors |
US8435351B2 (en) * | 2004-11-29 | 2013-05-07 | Tokyo Electron Limited | Method and system for measuring a flow rate in a solid precursor delivery system |
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1993
- 1993-10-13 US US08/136,215 patent/US5458086A/en not_active Expired - Lifetime
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1994
- 1994-10-17 JP JP8513177A patent/JPH10509939A/en not_active Ceased
- 1994-10-17 WO PCT/US1994/011791 patent/WO1996012055A1/en not_active Application Discontinuation
- 1994-10-17 CA CA002201905A patent/CA2201905A1/en not_active Abandoned
- 1994-10-17 EP EP94931878A patent/EP0783599A4/en not_active Withdrawn
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1997
- 1997-10-16 US US08/951,397 patent/USRE36295E/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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JPH10509939A (en) | 1998-09-29 |
EP0783599A1 (en) | 1997-07-16 |
EP0783599A4 (en) | 1998-08-19 |
CA2201905A1 (en) | 1996-04-25 |
US5458086A (en) | 1995-10-17 |
USRE36295E (en) | 1999-09-14 |
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