WO1997011482A3 - Removal of halogens and photoresist from wafers - Google Patents

Removal of halogens and photoresist from wafers Download PDF

Info

Publication number
WO1997011482A3
WO1997011482A3 PCT/US1996/014054 US9614054W WO9711482A3 WO 1997011482 A3 WO1997011482 A3 WO 1997011482A3 US 9614054 W US9614054 W US 9614054W WO 9711482 A3 WO9711482 A3 WO 9711482A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
plasma
halogen
removal
photoresist material
Prior art date
Application number
PCT/US1996/014054
Other languages
French (fr)
Other versions
WO1997011482A2 (en
Inventor
David Heine
Wilbur G Catabay
Original Assignee
Lsi Logic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lsi Logic Corp filed Critical Lsi Logic Corp
Publication of WO1997011482A2 publication Critical patent/WO1997011482A2/en
Publication of WO1997011482A3 publication Critical patent/WO1997011482A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

Abstract

Method and apparatus for removal of remaining photoresist material and halogen residues (9) after etching from a polysilicon or metallized wafer (15, 35, 55). Exposed portions of the wafer substrate (8), not covered by photoresist material, are etched by exposing the wafer to a first, halogen-containing plasma (PS1), such as HBr or CmHnBr2m+2-n' for a first selected time interval. The wafer is exposed to a second plasma (PS2), containing H2O as the primary constituent, for a selected second time interval. Optionally, this second plasma may also contain O2, H2, OH and/or H2O2 as another constituent. Hydrogen radicals and other radicals interact with the remaining photoresist material and with any free halogen and halogen-containing molecules on the wafer to produce reaction products that are removed from the wafer. Each plasma (22, 44, 62, 64) is maintained as an approximately planar body by imposing a time-varying magnetic field and, optionally, a time-varying electrical field on the plasma in directions approximately perpendicular to an exposed surface of the wafer. The processes of etching and of removal of photoresist and halogen residues may be carried out in two separate chambers (11, 31) or in a single chamber (51), with the wafer being maintained in different temperature ranges for the two processes.
PCT/US1996/014054 1995-09-05 1996-09-03 Removal of halogens and photoresist from wafers WO1997011482A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52429695A 1995-09-05 1995-09-05
US524,296 1995-09-05

Publications (2)

Publication Number Publication Date
WO1997011482A2 WO1997011482A2 (en) 1997-03-27
WO1997011482A3 true WO1997011482A3 (en) 1997-05-15

Family

ID=24088608

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/014054 WO1997011482A2 (en) 1995-09-05 1996-09-03 Removal of halogens and photoresist from wafers

Country Status (1)

Country Link
WO (1) WO1997011482A2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US9545360B2 (en) 2009-05-13 2017-01-17 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9554968B2 (en) 2013-03-11 2017-01-31 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging
US9572526B2 (en) 2009-05-13 2017-02-21 Sio2 Medical Products, Inc. Apparatus and method for transporting a vessel to and from a PECVD processing station

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548230B1 (en) * 1998-09-18 2003-04-15 Taiwan Semiconductor Manufacturing Co., Ltd Method for in-situ removal of photoresist and sidewall polymer
US6368517B1 (en) * 1999-02-17 2002-04-09 Applied Materials, Inc. Method for preventing corrosion of a dielectric material
US6734120B1 (en) * 1999-02-19 2004-05-11 Axcelis Technologies, Inc. Method of photoresist ash residue removal
US6852636B1 (en) * 1999-12-27 2005-02-08 Lam Research Corporation Insitu post etch process to remove remaining photoresist and residual sidewall passivation
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
EP2776603B1 (en) 2011-11-11 2019-03-06 SiO2 Medical Products, Inc. PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
EP2920567B1 (en) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
CN105705676B (en) 2012-11-30 2018-09-07 Sio2医药产品公司 Control the uniformity of the PECVD depositions on injector for medical purpose, cylindrantherae etc.
US20160015898A1 (en) 2013-03-01 2016-01-21 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US9863042B2 (en) 2013-03-15 2018-01-09 Sio2 Medical Products, Inc. PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases
EP3122917B1 (en) 2014-03-28 2020-05-06 SiO2 Medical Products, Inc. Antistatic coatings for plastic vessels
WO2017031354A2 (en) 2015-08-18 2017-02-23 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
US10504746B2 (en) 2016-04-12 2019-12-10 Applied Materials, Inc. HKMG integration
US10903065B2 (en) * 2017-05-12 2021-01-26 Lam Research Corporation Halogen removal module and associated systems and methods
CN114823297B (en) * 2022-04-19 2023-01-31 度亘激光技术（苏州）有限公司 Photoresist removing process and semiconductor manufacturing process

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4222839A (en) * 1978-09-21 1980-09-16 Motorola, Inc. Workpiece holder and method for plasma reactor apparatus
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US5016332A (en) * 1990-04-13 1991-05-21 Branson International Plasma Corporation Plasma reactor and process with wafer temperature control
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US4222839A (en) * 1978-09-21 1980-09-16 Motorola, Inc. Workpiece holder and method for plasma reactor apparatus
US5016332A (en) * 1990-04-13 1991-05-21 Branson International Plasma Corporation Plasma reactor and process with wafer temperature control
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9545360B2 (en) 2009-05-13 2017-01-17 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9572526B2 (en) 2009-05-13 2017-02-21 Sio2 Medical Products, Inc. Apparatus and method for transporting a vessel to and from a PECVD processing station
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US9554968B2 (en) 2013-03-11 2017-01-31 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging

Also Published As

Publication number Publication date
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