WO1997029510A1 - Abrasif d'oxyde de cerium, microplaquette semi-conductrice, dispositif semi-conducteur, procede pour les produire et procede pour polir les substrats - Google Patents
Abrasif d'oxyde de cerium, microplaquette semi-conductrice, dispositif semi-conducteur, procede pour les produire et procede pour polir les substrats Download PDFInfo
- Publication number
- WO1997029510A1 WO1997029510A1 PCT/JP1997/000326 JP9700326W WO9729510A1 WO 1997029510 A1 WO1997029510 A1 WO 1997029510A1 JP 9700326 W JP9700326 W JP 9700326W WO 9729510 A1 WO9729510 A1 WO 9729510A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cerium oxide
- polishing
- substrates
- production
- oxide particles
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97902626A EP0820092A4 (en) | 1996-02-07 | 1997-02-07 | CERIUM OXIDE ABRASIVE, SEMICONDUCTOR MICROPLATE, SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING THE SAME, AND METHOD FOR POLISHING THE SUBSTRATES |
JP52839297A JP3172194B2 (ja) | 1996-02-07 | 1997-02-07 | 基板の研磨法及び半導体チップの製造法 |
US08/930,916 US6420269B2 (en) | 1996-02-07 | 1997-02-07 | Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same |
AU16705/97A AU1670597A (en) | 1996-02-07 | 1997-02-07 | Cerium oxide abrasive, semiconductor chip, semiconductor device, process for the production of them, and method for the polishing of substrates |
Applications Claiming Priority (22)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8/21563 | 1996-02-07 | ||
JP2156396 | 1996-02-07 | ||
JP8/77805 | 1996-03-29 | ||
JP8/77812 | 1996-03-29 | ||
JP8077806A JPH11330016A (ja) | 1996-03-29 | 1996-03-29 | 酸化セリウム研磨剤及び基板の製造法 |
JP8077813A JPH11330022A (ja) | 1996-03-29 | 1996-03-29 | 酸化セリウム研磨剤及び基板の製造法 |
JP8077810A JPH11330019A (ja) | 1996-03-29 | 1996-03-29 | 酸化セリウム研磨剤及び基板の製造法 |
JP8/77813 | 1996-03-29 | ||
JP8077812A JPH11330021A (ja) | 1996-03-29 | 1996-03-29 | 酸化セリウム研磨剤及び基板の製造法 |
JP8/77806 | 1996-03-29 | ||
JP8077805A JPH11330015A (ja) | 1996-03-29 | 1996-03-29 | 酸化セリウム研磨剤及び基板の製造法 |
JP8/77810 | 1996-03-29 | ||
JP8/77811 | 1996-03-29 | ||
JP8/77807 | 1996-03-29 | ||
JP8077807A JPH11330017A (ja) | 1996-03-29 | 1996-03-29 | 酸化セリウム研磨剤及び基板の製造法 |
JP8/77809 | 1996-03-29 | ||
JP8077811A JPH11330020A (ja) | 1996-03-29 | 1996-03-29 | 酸化セリウム研磨剤及び基板の製造法 |
JP8/77808 | 1996-03-29 | ||
JP8077809A JPH11320418A (ja) | 1996-03-29 | 1996-03-29 | 酸化セリウム研磨剤及び基板の製造法 |
JP8077808A JPH11330018A (ja) | 1996-03-29 | 1996-03-29 | 酸化セリウム研磨剤及び基板の製造法 |
JP8078734A JPH11330014A (ja) | 1996-04-01 | 1996-04-01 | 基板の研磨方法 |
JP8/78734 | 1996-04-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997029510A1 true WO1997029510A1 (fr) | 1997-08-14 |
Family
ID=27581877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1997/000326 WO1997029510A1 (fr) | 1996-02-07 | 1997-02-07 | Abrasif d'oxyde de cerium, microplaquette semi-conductrice, dispositif semi-conducteur, procede pour les produire et procede pour polir les substrats |
Country Status (5)
Country | Link |
---|---|
US (1) | US6420269B2 (ja) |
EP (1) | EP0820092A4 (ja) |
KR (2) | KR100336598B1 (ja) |
AU (1) | AU1670597A (ja) |
WO (1) | WO1997029510A1 (ja) |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11228135A (ja) * | 1998-02-17 | 1999-08-24 | Toray Ind Inc | 酸化セリウム粉末とそれを含む化粧料、塗料およびプラスチック |
JPH11302633A (ja) * | 1998-04-20 | 1999-11-02 | Toshiba Corp | 研磨剤及び半導体基板のポリッシング方法 |
EP1043379A1 (en) * | 1997-12-18 | 2000-10-11 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing wafer, and method of producing semiconductor device |
JP2000328044A (ja) * | 1999-05-17 | 2000-11-28 | Hitachi Chem Co Ltd | セリウム化合物研磨剤及び基板の研磨法 |
JP2001002415A (ja) * | 1999-06-18 | 2001-01-09 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2001035820A (ja) * | 1999-07-21 | 2001-02-09 | Hitachi Chem Co Ltd | Cmp研磨液 |
JP2001055560A (ja) * | 1999-08-18 | 2001-02-27 | Hitachi Chem Co Ltd | 研磨剤及びそれを用いた基板の研磨方法 |
JP2002226837A (ja) * | 2001-02-07 | 2002-08-14 | Mitsui Mining & Smelting Co Ltd | セリウム系研摩材粒子及びその製造方法 |
JP2002241739A (ja) * | 2001-02-20 | 2002-08-28 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
JP2003055648A (ja) * | 2002-06-04 | 2003-02-26 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
WO2003104351A1 (en) * | 2002-06-05 | 2003-12-18 | Samsung Corning Co., Ltd. | Metal oxide powder for high precision polishing and method of preparation thereof |
US6737363B2 (en) * | 2000-09-27 | 2004-05-18 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
JPWO2002067309A1 (ja) * | 2001-02-20 | 2004-06-24 | 日立化成工業株式会社 | 研磨剤及び基板の研磨方法 |
JP2005028571A (ja) * | 2004-08-30 | 2005-02-03 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
JP2005123650A (ja) * | 1998-12-25 | 2005-05-12 | Hitachi Chem Co Ltd | Cmp研磨剤用添加液 |
JP2005167271A (ja) * | 1998-12-25 | 2005-06-23 | Hitachi Chem Co Ltd | Cmp研磨剤用添加液 |
JP2006140536A (ja) * | 2006-02-06 | 2006-06-01 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
JP2006186384A (ja) * | 2006-02-06 | 2006-07-13 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
WO2006080796A1 (en) * | 2005-01-26 | 2006-08-03 | Lg Chem, Ltd. | Cerium oxide abrasive and slurry containing the same |
JP2007036271A (ja) * | 1996-09-30 | 2007-02-08 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
JP2008098652A (ja) * | 2000-08-21 | 2008-04-24 | Toshiba Corp | 化学機械研磨用スラリおよび半導体装置の製造方法 |
JP4221903B2 (ja) * | 1999-05-28 | 2009-02-12 | 日立化成工業株式会社 | 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法 |
WO2009034905A1 (ja) * | 2007-09-13 | 2009-03-19 | Mitsui Mining & Smelting Co., Ltd. | 酸化セリウム及びその製造方法 |
JP2009147396A (ja) * | 2009-03-30 | 2009-07-02 | Hitachi Chem Co Ltd | 研磨剤及びそれを用いた基板の研磨方法 |
JP2009544559A (ja) * | 2006-07-28 | 2009-12-17 | エルジー・ケム・リミテッド | 酸化セリウム粉末、その製造方法及びこれを含むcmpスラリー |
US7754168B2 (en) | 2003-05-22 | 2010-07-13 | Hanwha Chemical Corporation | Concentrate of fine ceria particles for chemical mechanical polishing and preparing method thereof |
KR20160099616A (ko) * | 2013-12-16 | 2016-08-22 | 로디아 오퍼레이션스 | 세륨 옥사이드 입자의 액체 현탁액 |
WO2018124017A1 (ja) * | 2016-12-28 | 2018-07-05 | 花王株式会社 | 酸化セリウム砥粒 |
WO2020021730A1 (ja) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ、研磨液の製造方法、及び、研磨方法 |
US11352523B2 (en) | 2018-03-22 | 2022-06-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set and polishing method |
US11566150B2 (en) | 2017-03-27 | 2023-01-31 | Showa Denko Materials Co., Ltd. | Slurry and polishing method |
US11773291B2 (en) | 2017-03-27 | 2023-10-03 | Resonac Corporation | Polishing liquid, polishing liquid set, and polishing method |
Families Citing this family (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100761636B1 (ko) | 1996-09-30 | 2007-09-27 | 히다치 가세고교 가부시끼가이샤 | 산화세륨 입자 |
TW365563B (en) * | 1997-04-28 | 1999-08-01 | Seimi Chem Kk | Polishing agent for semiconductor and method for its production |
JP3469771B2 (ja) * | 1998-03-24 | 2003-11-25 | 富士通株式会社 | 半導体装置およびその製造方法 |
US6783434B1 (en) * | 1998-12-25 | 2004-08-31 | Hitachi Chemical Company, Ltd. | CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate |
US6238450B1 (en) * | 1999-06-16 | 2001-05-29 | Saint-Gobain Industrial Ceramics, Inc. | Ceria powder |
EP1205965B1 (en) * | 1999-06-18 | 2006-11-15 | Hitachi Chemical Company, Ltd. | Use of cmp abrasive |
WO2001000744A1 (fr) * | 1999-06-28 | 2001-01-04 | Nissan Chemical Industries, Ltd. | Compose abrasif pour plateau en verre de disque dur |
CN1125862C (zh) * | 1999-09-20 | 2003-10-29 | 长兴化学工业股份有限公司 | 半导体加工用化学机械研磨组合物 |
FR2801299B1 (fr) * | 1999-11-23 | 2002-06-07 | Rhodia Terres Rares | Dispersion colloidale aqueuse a base d'au moins un compose d'un lanthanide et d'un complexant, procede de preparation et utilisation |
JP2001269859A (ja) * | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
TW471057B (en) * | 2000-06-09 | 2002-01-01 | Macronix Int Co Ltd | Method for reducing dishing effect during chemical mechanical polishing |
DE10048477B4 (de) * | 2000-09-29 | 2008-07-03 | Qimonda Ag | Verfahren zum chemisch-mechanischen Polieren von Schichten aus Metallen der Platingruppe |
TWI228538B (en) * | 2000-10-23 | 2005-03-01 | Kao Corp | Polishing composition |
KR100450522B1 (ko) * | 2000-12-18 | 2004-10-01 | 주식회사 소디프신소재 | 초미분 산화 세륨 연마제의 제조 방법, 이에 의해 제조된연마제 및 이를 사용하여 기판을 연마하는 방법 |
US6756308B2 (en) * | 2001-02-13 | 2004-06-29 | Ekc Technology, Inc. | Chemical-mechanical planarization using ozone |
DE10109328A1 (de) | 2001-02-27 | 2002-09-12 | Infineon Technologies Ag | Verfahren zur Entfernung einer Maskenschicht von einem Halbleitersubstrat |
US6716407B2 (en) * | 2001-06-18 | 2004-04-06 | The Boeing Company | Monazite-based coatings for thermal protection systems |
CN1290770C (zh) * | 2001-09-07 | 2006-12-20 | 阿南化成株式会社 | 二氧化铈、其制备法和用于净化废气的催化剂 |
US20040198191A1 (en) * | 2001-11-16 | 2004-10-07 | Naoki Bessho | Cerium-based polish and cerium-based polish slurry |
JP2003313542A (ja) * | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
KR100539983B1 (ko) * | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Cmp용 세리아 연마제 및 그 제조 방법 |
DE10337199A1 (de) * | 2003-08-13 | 2005-03-10 | Degussa | Ceroxidpulver |
JP4574140B2 (ja) * | 2003-08-27 | 2010-11-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いる研磨方法 |
KR100714814B1 (ko) * | 2003-09-12 | 2007-05-04 | 히다치 가세고교 가부시끼가이샤 | 세륨염, 그 제조방법, 산화세륨 및 세륨계 연마제 |
JP3974127B2 (ja) * | 2003-09-12 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
US7470295B2 (en) | 2004-03-12 | 2008-12-30 | K.C. Tech Co., Ltd. | Polishing slurry, method of producing same, and method of polishing substrate |
KR100599329B1 (ko) * | 2004-05-11 | 2006-07-14 | 주식회사 케이씨텍 | 연마용 슬러리 및 기판 연마 방법 |
TWI283008B (en) * | 2004-05-11 | 2007-06-21 | K C Tech Co Ltd | Slurry for CMP and method of producing the same |
TWI273632B (en) * | 2004-07-28 | 2007-02-11 | K C Tech Co Ltd | Polishing slurry, method of producing same, and method of polishing substrate |
US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
KR100864996B1 (ko) * | 2004-09-28 | 2008-10-23 | 히다치 가세고교 가부시끼가이샤 | Cmp연마제 및 기판의 연마방법 |
DE112005002798T5 (de) * | 2004-11-10 | 2007-09-27 | Dai Nippon Printing Co., Ltd. | Verfahren zur Herstellung eines Metalloxidfilms |
TWI323741B (en) * | 2004-12-16 | 2010-04-21 | K C Tech Co Ltd | Abrasive particles, polishing slurry, and producing method thereof |
US8388710B2 (en) * | 2005-01-26 | 2013-03-05 | Lg Chem, Ltd. | Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same |
KR100641348B1 (ko) * | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
US7670902B2 (en) * | 2005-07-26 | 2010-03-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and structure for landing polysilicon contact |
KR100725699B1 (ko) * | 2005-09-02 | 2007-06-07 | 주식회사 엘지화학 | 일액형 cmp 슬러리용 산화 세륨 분말, 그 제조방법,이를 포함하는 일액형 cmp 슬러리 조성물, 및 상기슬러리를 사용하는 얕은 트랜치 소자 분리방법 |
KR101103748B1 (ko) * | 2005-09-27 | 2012-01-06 | 삼성코닝정밀소재 주식회사 | 반도체 박막 연마용 산화세륨 슬러리 및 이의 제조방법 |
JP2007103514A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨用組成物及び研磨方法 |
CN101039876B (zh) * | 2005-10-14 | 2011-07-27 | Lg化学株式会社 | 用于化学机械抛光的二氧化铈粉末的制备方法及使用该粉末制备化学机械抛光浆料的方法 |
WO2007046420A1 (ja) * | 2005-10-19 | 2007-04-26 | Hitachi Chemical Co., Ltd. | 酸化セリウムスラリー、酸化セリウム研磨液及びこれらを用いた基板の研磨方法 |
WO2007069488A1 (ja) | 2005-12-16 | 2007-06-21 | Jsr Corporation | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット |
KR100880107B1 (ko) * | 2006-01-25 | 2009-01-21 | 주식회사 엘지화학 | Cmp 슬러리 및 이를 이용한 반도체 웨이퍼의 연마 방법 |
JP2008117807A (ja) * | 2006-10-31 | 2008-05-22 | Fujimi Inc | 研磨用組成物及び研磨方法 |
US7456107B2 (en) * | 2006-11-09 | 2008-11-25 | Cabot Microelectronics Corporation | Compositions and methods for CMP of low-k-dielectric materials |
KR101050136B1 (ko) * | 2006-11-20 | 2011-07-19 | 주식회사 엘지화학 | 유기용매를 이용한 산화세륨 분말의 제조방법 및 상기분말을 포함하는cmp슬러리 |
JP2008130988A (ja) * | 2006-11-24 | 2008-06-05 | Fujimi Inc | 研磨用組成物及び研磨方法 |
KR100874925B1 (ko) * | 2007-06-04 | 2008-12-19 | 삼성전자주식회사 | 반도체 패키지, 그 제조 방법, 이를 포함하는 카드 및 이를포함하는 시스템 |
CN102666014B (zh) | 2010-03-12 | 2017-10-31 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 |
CN103450847A (zh) * | 2010-11-22 | 2013-12-18 | 日立化成株式会社 | 磨粒的制造方法、悬浮液的制造方法以及研磨液的制造方法 |
US9881801B2 (en) | 2010-11-22 | 2018-01-30 | Hitachi Chemical Company, Ltd. | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
KR101886895B1 (ko) | 2010-11-22 | 2018-08-08 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 |
US20140318584A1 (en) * | 2011-01-13 | 2014-10-30 | Advanced Technology Materials, Inc. | Formulations for the removal of particles generated by cerium-containing solutions |
JP6044630B2 (ja) | 2012-02-21 | 2016-12-14 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
JP6044629B2 (ja) | 2012-02-21 | 2016-12-14 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
US20150060400A1 (en) * | 2012-04-18 | 2015-03-05 | Fujimi Incorporated | Polishing composition |
CN104334675B (zh) | 2012-05-22 | 2016-10-26 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
CN104321854B (zh) | 2012-05-22 | 2017-06-20 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
WO2013175859A1 (ja) | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
US8920667B2 (en) * | 2013-01-30 | 2014-12-30 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition containing zirconia and metal oxidizer |
US20150021513A1 (en) * | 2013-07-17 | 2015-01-22 | Yun-jeong Kim | Cmp slurry composition for polishing an organic layer and method of forming a semiconductor device using the same |
US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
JPWO2020196162A1 (ja) * | 2019-03-22 | 2020-10-01 | ||
KR102156036B1 (ko) * | 2020-06-30 | 2020-09-16 | 주식회사 케이씨텍 | 세륨계 연마입자 및 그 제조방법 |
KR102453292B1 (ko) * | 2020-07-07 | 2022-10-12 | 주식회사 나노신소재 | 산화세륨 복합분말의 분산 조성물 |
CN115595585A (zh) * | 2022-11-10 | 2023-01-13 | 江西省科学院应用物理研究所(Cn) | 一种易氧化金属专用金相抛光剂的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0455315A (ja) * | 1990-06-21 | 1992-02-24 | Dainichiseika Color & Chem Mfg Co Ltd | 酸化セリウム微粉体の製造方法 |
JPH05326469A (ja) * | 1992-05-26 | 1993-12-10 | Toshiba Corp | 半導体装置の製造方法 |
JPH0672711A (ja) * | 1984-02-20 | 1994-03-15 | Rhone Poulenc Spec Chim | 新規な形態的特徴を持つ酸化第二セリウムの製造方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4022625A (en) * | 1974-12-24 | 1977-05-10 | Nl Industries, Inc. | Polishing composition and method of polishing |
FR2472601A1 (fr) * | 1979-12-27 | 1981-07-03 | Rhone Poulenc Ind | Procede de fabrication de compositions de polissage a base de cerium |
FR2545830B1 (fr) * | 1983-05-13 | 1986-01-03 | Rhone Poulenc Spec Chim | Nouvelle composition de polissage a base de cerium et son procede de fabrication |
FR2549846B1 (fr) * | 1983-07-29 | 1986-12-26 | Rhone Poulenc Spec Chim | Nouvelle composition de polissage a base de cerium et son procede de fabrication |
FR2583034A1 (fr) * | 1985-06-10 | 1986-12-12 | Rhone Poulenc Spec Chim | Nouvel oxyde cerique, son procede de fabrication et ses applications |
FR2604443A1 (fr) * | 1986-09-26 | 1988-04-01 | Rhone Poulenc Chimie | Composition de polissage a base de cerium destinee au polissage des verres organiques |
FR2617153B1 (fr) * | 1987-06-26 | 1991-04-05 | Rhone Poulenc Chimie | Procede d'obtention d'un oxyde cerique et oxyde cerique a nouvelles caracteristiques morphologiques |
FR2617154B1 (fr) * | 1987-06-29 | 1990-11-30 | Rhone Poulenc Chimie | Procede d'obtention d'oxyde cerique et oxyde cerique a nouvelles caracteristiques morphologiques |
FR2624519A1 (fr) * | 1987-12-09 | 1989-06-16 | Rhone Poulenc Chimie | Composition de polissage perfectionnee a base de cerium et son procede de preparation |
JPH01266283A (ja) * | 1988-04-12 | 1989-10-24 | Kanebo Ltd | 皮革状シート物及びその製造法 |
NL8801981A (nl) | 1988-08-09 | 1990-03-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US5443604A (en) * | 1991-11-27 | 1995-08-22 | The United States Of America As Represented By The United States Department Of Energy | Polishing compound for plastic surfaces |
JP3120520B2 (ja) | 1991-12-11 | 2000-12-25 | ソニー株式会社 | 洗浄装置 |
US5264010A (en) | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
JPH05326467A (ja) | 1992-05-15 | 1993-12-10 | Toshiba Corp | 半導体基板及びその製造方法 |
US5445996A (en) * | 1992-05-26 | 1995-08-29 | Kabushiki Kaisha Toshiba | Method for planarizing a semiconductor device having a amorphous layer |
FR2694016B1 (fr) * | 1992-07-22 | 1994-09-30 | Delcroix Yves | Agent nettoyant-rénovateur pour surfaces lisses. |
JPH06302570A (ja) | 1993-04-15 | 1994-10-28 | Nippon Steel Corp | 半導体集積回路の製造方法及び製造装置 |
US5389352A (en) * | 1993-07-21 | 1995-02-14 | Rodel, Inc. | Oxide particles and method for producing them |
US5952243A (en) * | 1995-06-26 | 1999-09-14 | Alliedsignal Inc. | Removal rate behavior of spin-on dielectrics with chemical mechanical polish |
JPH11330016A (ja) | 1996-03-29 | 1999-11-30 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
JPH11320418A (ja) | 1996-03-29 | 1999-11-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
JPH11330019A (ja) | 1996-03-29 | 1999-11-30 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
JPH11330017A (ja) | 1996-03-29 | 1999-11-30 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
JPH11330015A (ja) | 1996-03-29 | 1999-11-30 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
JPH11330020A (ja) | 1996-03-29 | 1999-11-30 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
JPH11330018A (ja) | 1996-03-29 | 1999-11-30 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
JPH11330021A (ja) | 1996-03-29 | 1999-11-30 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US5896870A (en) * | 1997-03-11 | 1999-04-27 | International Business Machines Corporation | Method of removing slurry particles |
US6093649A (en) * | 1998-08-07 | 2000-07-25 | Rodel Holdings, Inc. | Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto |
-
1997
- 1997-02-07 EP EP97902626A patent/EP0820092A4/en not_active Ceased
- 1997-02-07 WO PCT/JP1997/000326 patent/WO1997029510A1/ja active IP Right Grant
- 1997-02-07 AU AU16705/97A patent/AU1670597A/en not_active Abandoned
- 1997-02-07 KR KR1020017005427A patent/KR100336598B1/ko not_active IP Right Cessation
- 1997-02-07 KR KR1019970707101A patent/KR100360787B1/ko not_active IP Right Cessation
- 1997-02-07 US US08/930,916 patent/US6420269B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0672711A (ja) * | 1984-02-20 | 1994-03-15 | Rhone Poulenc Spec Chim | 新規な形態的特徴を持つ酸化第二セリウムの製造方法 |
JPH0455315A (ja) * | 1990-06-21 | 1992-02-24 | Dainichiseika Color & Chem Mfg Co Ltd | 酸化セリウム微粉体の製造方法 |
JPH05326469A (ja) * | 1992-05-26 | 1993-12-10 | Toshiba Corp | 半導体装置の製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP0820092A4 * |
Cited By (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012169648A (ja) * | 1996-09-30 | 2012-09-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
JP2007036271A (ja) * | 1996-09-30 | 2007-02-08 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
KR100792985B1 (ko) | 1997-12-18 | 2008-01-08 | 히다치 가세고교 가부시끼가이샤 | 연마제 |
KR100695857B1 (ko) * | 1997-12-18 | 2007-03-20 | 히다치 가세고교 가부시끼가이샤 | 연마제 |
EP1043379A1 (en) * | 1997-12-18 | 2000-10-11 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing wafer, and method of producing semiconductor device |
EP1043379A4 (en) * | 1997-12-18 | 2004-08-04 | Hitachi Chemical Co Ltd | ABRASIVE, WAFER POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
US7115021B2 (en) | 1997-12-18 | 2006-10-03 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
US8137159B2 (en) | 1997-12-18 | 2012-03-20 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
US7963825B2 (en) | 1997-12-18 | 2011-06-21 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
US7871308B2 (en) | 1997-12-18 | 2011-01-18 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
US8616936B2 (en) | 1997-12-18 | 2013-12-31 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
KR100695858B1 (ko) * | 1997-12-18 | 2007-03-20 | 히다치 가세고교 가부시끼가이샤 | 연마제 |
JP2004153286A (ja) * | 1997-12-18 | 2004-05-27 | Hitachi Chem Co Ltd | 研磨剤 |
KR100709661B1 (ko) * | 1997-12-18 | 2007-04-23 | 히다치 가세고교 가부시끼가이샤 | 연마제 |
KR100736317B1 (ko) | 1997-12-18 | 2007-07-09 | 히다치 가세고교 가부시끼가이샤 | 연마제 |
US8162725B2 (en) | 1997-12-18 | 2012-04-24 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
KR100793526B1 (ko) | 1997-12-18 | 2008-01-14 | 히다치 가세고교 가부시끼가이샤 | 연마제 |
JPH11228135A (ja) * | 1998-02-17 | 1999-08-24 | Toray Ind Inc | 酸化セリウム粉末とそれを含む化粧料、塗料およびプラスチック |
JPH11302633A (ja) * | 1998-04-20 | 1999-11-02 | Toshiba Corp | 研磨剤及び半導体基板のポリッシング方法 |
JP2005167271A (ja) * | 1998-12-25 | 2005-06-23 | Hitachi Chem Co Ltd | Cmp研磨剤用添加液 |
JP4604727B2 (ja) * | 1998-12-25 | 2011-01-05 | 日立化成工業株式会社 | Cmp研磨剤用添加液 |
JP4501694B2 (ja) * | 1998-12-25 | 2010-07-14 | 日立化成工業株式会社 | Cmp研磨剤用添加液 |
JP2005123650A (ja) * | 1998-12-25 | 2005-05-12 | Hitachi Chem Co Ltd | Cmp研磨剤用添加液 |
JP2000328044A (ja) * | 1999-05-17 | 2000-11-28 | Hitachi Chem Co Ltd | セリウム化合物研磨剤及び基板の研磨法 |
JP4221903B2 (ja) * | 1999-05-28 | 2009-02-12 | 日立化成工業株式会社 | 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法 |
JP2009051726A (ja) * | 1999-05-28 | 2009-03-12 | Hitachi Chem Co Ltd | 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法 |
JP2001002415A (ja) * | 1999-06-18 | 2001-01-09 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2001035820A (ja) * | 1999-07-21 | 2001-02-09 | Hitachi Chem Co Ltd | Cmp研磨液 |
JP4555936B2 (ja) * | 1999-07-21 | 2010-10-06 | 日立化成工業株式会社 | Cmp研磨液 |
JP2001055560A (ja) * | 1999-08-18 | 2001-02-27 | Hitachi Chem Co Ltd | 研磨剤及びそれを用いた基板の研磨方法 |
JP2008098652A (ja) * | 2000-08-21 | 2008-04-24 | Toshiba Corp | 化学機械研磨用スラリおよび半導体装置の製造方法 |
US6737363B2 (en) * | 2000-09-27 | 2004-05-18 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
JP2002226837A (ja) * | 2001-02-07 | 2002-08-14 | Mitsui Mining & Smelting Co Ltd | セリウム系研摩材粒子及びその製造方法 |
JPWO2002067309A1 (ja) * | 2001-02-20 | 2004-06-24 | 日立化成工業株式会社 | 研磨剤及び基板の研磨方法 |
JP2009010402A (ja) * | 2001-02-20 | 2009-01-15 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
JP2002241739A (ja) * | 2001-02-20 | 2002-08-28 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
JP2003055648A (ja) * | 2002-06-04 | 2003-02-26 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
WO2003104351A1 (en) * | 2002-06-05 | 2003-12-18 | Samsung Corning Co., Ltd. | Metal oxide powder for high precision polishing and method of preparation thereof |
JP2005529053A (ja) * | 2002-06-05 | 2005-09-29 | サムソン コーニング カンパニー,リミテッド | 高精度研磨用金属酸化物粉体及びその製造方法 |
US7754168B2 (en) | 2003-05-22 | 2010-07-13 | Hanwha Chemical Corporation | Concentrate of fine ceria particles for chemical mechanical polishing and preparing method thereof |
JP2005028571A (ja) * | 2004-08-30 | 2005-02-03 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
WO2006080796A1 (en) * | 2005-01-26 | 2006-08-03 | Lg Chem, Ltd. | Cerium oxide abrasive and slurry containing the same |
JP2007527945A (ja) * | 2005-01-26 | 2007-10-04 | エルジー・ケム・リミテッド | 酸化セリウム研磨材及び研磨用スラリー |
JP2006140536A (ja) * | 2006-02-06 | 2006-06-01 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
JP2006186384A (ja) * | 2006-02-06 | 2006-07-13 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
JP2009544559A (ja) * | 2006-07-28 | 2009-12-17 | エルジー・ケム・リミテッド | 酸化セリウム粉末、その製造方法及びこれを含むcmpスラリー |
JP2009067627A (ja) * | 2007-09-13 | 2009-04-02 | Mitsui Mining & Smelting Co Ltd | 酸化セリウム及びその製造方法 |
WO2009034905A1 (ja) * | 2007-09-13 | 2009-03-19 | Mitsui Mining & Smelting Co., Ltd. | 酸化セリウム及びその製造方法 |
JP2009147396A (ja) * | 2009-03-30 | 2009-07-02 | Hitachi Chem Co Ltd | 研磨剤及びそれを用いた基板の研磨方法 |
KR102367577B1 (ko) | 2013-12-16 | 2022-02-25 | 로디아 오퍼레이션스 | 세륨 옥사이드 입자의 액체 현탁액 |
KR20160099616A (ko) * | 2013-12-16 | 2016-08-22 | 로디아 오퍼레이션스 | 세륨 옥사이드 입자의 액체 현탁액 |
WO2018124017A1 (ja) * | 2016-12-28 | 2018-07-05 | 花王株式会社 | 酸化セリウム砥粒 |
JP2018109089A (ja) * | 2016-12-28 | 2018-07-12 | 花王株式会社 | 酸化セリウム砥粒 |
US11814548B2 (en) | 2017-03-27 | 2023-11-14 | Resonac Corporation | Polishing liquid, polishing liquid set, and polishing method |
US11773291B2 (en) | 2017-03-27 | 2023-10-03 | Resonac Corporation | Polishing liquid, polishing liquid set, and polishing method |
US11566150B2 (en) | 2017-03-27 | 2023-01-31 | Showa Denko Materials Co., Ltd. | Slurry and polishing method |
US11572490B2 (en) | 2018-03-22 | 2023-02-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
US11352523B2 (en) | 2018-03-22 | 2022-06-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set and polishing method |
US11767448B2 (en) | 2018-03-22 | 2023-09-26 | Resonac Corporation | Polishing liquid, polishing liquid set, and polishing method |
US11499078B2 (en) | 2018-07-26 | 2022-11-15 | Showa Denko Materials Co., Ltd. | Slurry, polishing solution production method, and polishing method |
TWI804661B (zh) * | 2018-07-26 | 2023-06-11 | 日商力森諾科股份有限公司 | 研漿、研磨液的製造方法以及研磨方法 |
JPWO2020021732A1 (ja) * | 2018-07-26 | 2021-08-05 | 昭和電工マテリアルズ株式会社 | スラリ及び研磨方法 |
US11505731B2 (en) | 2018-07-26 | 2022-11-22 | Showa Denko Materials Co., Ltd. | Slurry and polishing method |
US11518920B2 (en) | 2018-07-26 | 2022-12-06 | Showa Denko Materials Co., Ltd. | Slurry, and polishing method |
KR20210029229A (ko) * | 2018-07-26 | 2021-03-15 | 쇼와덴코머티리얼즈가부시끼가이샤 | 슬러리 및 연마 방법 |
KR20210027466A (ko) * | 2018-07-26 | 2021-03-10 | 쇼와덴코머티리얼즈가부시끼가이샤 | 슬러리, 연마액의 제조 방법, 및 연마 방법 |
US11492526B2 (en) | 2018-07-26 | 2022-11-08 | Showa Denko Materials Co., Ltd. | Slurry, method for producing polishing liquid, and polishing method |
TWI804660B (zh) * | 2018-07-26 | 2023-06-11 | 日商力森諾科股份有限公司 | 研漿、研磨液的製造方法以及研磨方法 |
TWI804659B (zh) * | 2018-07-26 | 2023-06-11 | 日商力森諾科股份有限公司 | 研漿及研磨方法 |
JPWO2020021730A1 (ja) * | 2018-07-26 | 2021-08-02 | 昭和電工マテリアルズ株式会社 | スラリ、研磨液の製造方法、及び、研磨方法 |
WO2020021732A1 (ja) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
KR102589119B1 (ko) | 2018-07-26 | 2023-10-12 | 가부시끼가이샤 레조낙 | 슬러리 및 연마 방법 |
KR102589117B1 (ko) | 2018-07-26 | 2023-10-12 | 가부시끼가이샤 레조낙 | 슬러리, 연마액의 제조 방법, 및 연마 방법 |
WO2020021730A1 (ja) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ、研磨液の製造方法、及び、研磨方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0820092A1 (en) | 1998-01-21 |
KR100336598B1 (ko) | 2002-05-16 |
KR100360787B1 (ko) | 2003-01-29 |
US6420269B2 (en) | 2002-07-16 |
EP0820092A4 (en) | 2000-03-29 |
US20020016060A1 (en) | 2002-02-07 |
AU1670597A (en) | 1997-08-28 |
KR19980703701A (ko) | 1998-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO1997029510A1 (fr) | Abrasif d'oxyde de cerium, microplaquette semi-conductrice, dispositif semi-conducteur, procede pour les produire et procede pour polir les substrats | |
AU5373998A (en) | Chemical mechanical polishing copper substrates | |
CA1052693A (en) | Modifying enzymes with polyethylene glycol and product produced thereby | |
AU3138597A (en) | Fluoride additive containing chemical mechanical polishing slurry and method for use of same | |
MY120573A (en) | Slurry comprising a ligand or chelating agent for polishing a surface. | |
TW365563B (en) | Polishing agent for semiconductor and method for its production | |
EP0853335A3 (en) | Slurry and process for the mechano-chemical polishing of semiconductor devices | |
GB1537128A (en) | Polishing | |
MY134021A (en) | Alkali metal-containing polishing system and method | |
MY126717A (en) | Cmp composition containing silane modified abrasive particles. | |
WO2000000560A3 (en) | Chemical mechanical polishing slurry and method for using same | |
EP0373501A3 (en) | Fine polishing composition for wafers | |
TW324676B (en) | Polishing agent, method for producing the same and method for polishing | |
AU4691800A (en) | Method and system for cleaning a chemical mechanical polishing pad | |
IL134213A (en) | Polishing composition including an inhibitor of tungsten etching | |
AU5464298A (en) | A composition and slurry useful for metal cmp | |
EP0947469A3 (en) | Abrasive | |
AU2001253382A1 (en) | Abrasive article having a window system for polishing wafers, and methods | |
EP1369906A4 (en) | POLISHING PASTE AND METHOD OF POLISHING A SUBSTRATE | |
WO2005033234A3 (en) | Novel slurry for chemical mechanical polishing of metals | |
EP1160300A3 (en) | Aqueous dispersion for chemical mechanical polishing | |
WO2001099170A3 (en) | Ceria slurry and process for the chemical-mechanical polishing of silicon dioxide | |
MY138857A (en) | High selectivity colloidal silica slurry | |
SG97841A1 (en) | Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material | |
MY133054A (en) | Chemical mechanical abrasive composition for use in semiconductor processing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE HU IL IS JP KE KG KR KZ LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG US UZ VN AM AZ BY KG KZ MD RU TJ TM |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): KE LS MW SD SZ UG AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1019970707101 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1997902626 Country of ref document: EP |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 08930916 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 1997902626 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1019970707101 Country of ref document: KR |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWG | Wipo information: grant in national office |
Ref document number: 1019970707101 Country of ref document: KR |