WO1998024163A3 - Multiple magnetic tunnel structures - Google Patents

Multiple magnetic tunnel structures Download PDF

Info

Publication number
WO1998024163A3
WO1998024163A3 PCT/US1997/020419 US9720419W WO9824163A3 WO 1998024163 A3 WO1998024163 A3 WO 1998024163A3 US 9720419 W US9720419 W US 9720419W WO 9824163 A3 WO9824163 A3 WO 9824163A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic tunnel
multiple magnetic
tunnel structures
tunnel junction
junction
Prior art date
Application number
PCT/US1997/020419
Other languages
French (fr)
Other versions
WO1998024163A2 (en
Inventor
Siu-Tat Chui
Original Assignee
Chui Siu Tat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chui Siu Tat filed Critical Chui Siu Tat
Priority to CA002270896A priority Critical patent/CA2270896A1/en
Priority to EP97948214A priority patent/EP0948819A2/en
Publication of WO1998024163A2 publication Critical patent/WO1998024163A2/en
Publication of WO1998024163A3 publication Critical patent/WO1998024163A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Abstract

A double tunnel junction is disclosed that can be used as a magnetic sensor or as random access memories. The preferred embodiment comprises three magnetic metal materials (16, 18 and 20) separated by two insulating layers (12 and 14). A current is passed through the first tunnel junction thereby developing a voltage in the second junction. The resistance of this device can be changed over a 100 % when an external magnetic field of just a few gauss is applied.
PCT/US1997/020419 1996-11-12 1997-11-04 Multiple magnetic tunnel structures WO1998024163A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CA002270896A CA2270896A1 (en) 1996-11-12 1997-11-04 Multiple magnetic tunnel structures
EP97948214A EP0948819A2 (en) 1996-11-12 1997-11-04 Multiple magnetic tunnel structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/745,815 1996-11-12
US08/745,815 US5757056A (en) 1996-11-12 1996-11-12 Multiple magnetic tunnel structures

Publications (2)

Publication Number Publication Date
WO1998024163A2 WO1998024163A2 (en) 1998-06-04
WO1998024163A3 true WO1998024163A3 (en) 1998-10-08

Family

ID=24998356

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/020419 WO1998024163A2 (en) 1996-11-12 1997-11-04 Multiple magnetic tunnel structures

Country Status (4)

Country Link
US (1) US5757056A (en)
EP (1) EP0948819A2 (en)
CA (1) CA2270896A1 (en)
WO (1) WO1998024163A2 (en)

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US6930765B2 (en) * 2001-03-26 2005-08-16 Kla-Tencor Technologies Multiple spot size optical profilometer, ellipsometer, reflectometer and scatterometer
US6031615A (en) * 1997-09-22 2000-02-29 Candela Instruments System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness
US6909500B2 (en) * 2001-03-26 2005-06-21 Candela Instruments Method of detecting and classifying scratches, particles and pits on thin film disks or wafers
US5930087A (en) * 1997-11-20 1999-07-27 Hewlett-Packard Company Robust recording head for near-contact operation
US6211559B1 (en) * 1998-02-27 2001-04-03 Motorola, Inc. Symmetric magnetic tunnel device
US6083764A (en) * 1998-07-20 2000-07-04 Motorola, Inc. Method of fabricating an MTJ with low areal resistance
US6178074B1 (en) * 1998-11-19 2001-01-23 International Business Machines Corporation Double tunnel junction with magnetoresistance enhancement layer
JP2000208831A (en) * 1999-01-18 2000-07-28 Sony Corp Magnetoresistive element and magnetic device using the element
FR2791814A1 (en) * 1999-03-31 2000-10-06 Univ Pasteur MICROELECTRONIC DEVICE WITH TUNNEL JUNCTIONS AND MEMORY NETWORK AND SENSOR INCLUDING SUCH DEVICES
US6381171B1 (en) 1999-05-19 2002-04-30 Kabushiki Kaisha Toshiba Magnetic element, magnetic read head, magnetic storage device, magnetic memory device
JP3477638B2 (en) * 1999-07-09 2003-12-10 科学技術振興事業団 Ferromagnetic double quantum well tunnel magnetoresistive device
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
GB0006142D0 (en) * 2000-03-14 2000-05-03 Isis Innovation Spin transistor
DE10019697A1 (en) * 2000-04-20 2001-11-15 Sebastian T B Goennenwein Spin polarization of charge carrier systems in solid bodies comprises applying a inhomogeneous magnetic field produced by a structure in the region of a solid body or on the surface of a solid body
DE10031401C2 (en) * 2000-07-03 2002-05-29 Forschungszentrum Juelich Gmbh Three-gate device, in particular spin injection transistor
JP4309075B2 (en) 2000-07-27 2009-08-05 株式会社東芝 Magnetic storage
US6567244B1 (en) 2000-10-10 2003-05-20 Hitachi Global Storage Technologies Netherlands Differential yoke type read head
KR100396602B1 (en) * 2000-12-12 2003-09-02 엘지전자 주식회사 TMR device using a carbon nanotube
US6661626B2 (en) 2001-03-20 2003-12-09 International Business Machines Corporation Tunnel valve sensor having a pinned layer structure with an iron oxide (Fe3O4) layer
US6657888B1 (en) * 2001-05-11 2003-12-02 Board Of Regents Of The University Of Nebraska Application of high spin polarization materials in two terminal non-volatile bistable memory devices
US6541792B1 (en) * 2001-09-14 2003-04-01 Hewlett-Packard Development Company, Llp Memory device having dual tunnel junction memory cells
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6822838B2 (en) * 2002-04-02 2004-11-23 International Business Machines Corporation Dual magnetic tunnel junction sensor with a longitudinal bias stack
US7161771B2 (en) * 2002-04-02 2007-01-09 Hitachi Global Storage Technologies Netherlands B.V. Dual spin valve sensor with a longitudinal bias stack
US7095646B2 (en) * 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US7230804B2 (en) * 2003-05-02 2007-06-12 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter
US7916435B1 (en) 2003-05-02 2011-03-29 Hitachi Global Storage Technologies Netherlands B.V. Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer
US6956763B2 (en) * 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US6967366B2 (en) * 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US7268986B2 (en) * 2004-03-31 2007-09-11 Hitachi Global Storage Technologies Netherlands B.V. Double tunnel junction using self-pinned center ferromagnet
US7315041B2 (en) * 2004-05-21 2008-01-01 The Regents Of The University Of California Switching devices based on half-metals
CN1606170A (en) * 2004-09-24 2005-04-13 中国科学院物理研究所 Transistor based on double barrier tunnel junction resonant tunneling effect
JP2006093432A (en) * 2004-09-24 2006-04-06 Sony Corp Memory element and memory
US7129098B2 (en) * 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US7298597B2 (en) 2005-03-29 2007-11-20 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling
US7453084B2 (en) * 2005-05-24 2008-11-18 Seagate Technology Llc Spin transistor with ultra-low energy base-collector barrier
US10347709B2 (en) * 2016-12-27 2019-07-09 Ferric Inc. Methods of manufacturing integrated magnetic core inductors with vertical laminations
JP7208504B2 (en) * 2019-03-11 2023-01-19 ｃＴａｎｇｅｎｔ株式会社 soundproof material
US11735349B2 (en) 2019-08-30 2023-08-22 Ferric Inc. Magnetic core with vertical laminations having high aspect ratio

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US4471467A (en) * 1976-07-20 1984-09-11 U.S. Philips Corporation Magnetic domain device
US5218512A (en) * 1991-08-16 1993-06-08 Rohm Co., Ltd. Ferroelectric device
US5390142A (en) * 1992-05-26 1995-02-14 Kappa Numerics, Inc. Memory material and method for its manufacture
US5477482A (en) * 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
US5565695A (en) * 1995-04-21 1996-10-15 Johnson; Mark B. Magnetic spin transistor hybrid circuit element
US5629922A (en) * 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
US5629549A (en) * 1995-04-21 1997-05-13 Johnson; Mark B. Magnetic spin transistor device, logic gate & method of operation
US5638252A (en) * 1995-06-14 1997-06-10 Hughes Aircraft Company Electrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitor

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US5432373A (en) * 1992-12-15 1995-07-11 Bell Communications Research, Inc. Magnetic spin transistor
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
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Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471467A (en) * 1976-07-20 1984-09-11 U.S. Philips Corporation Magnetic domain device
US5218512A (en) * 1991-08-16 1993-06-08 Rohm Co., Ltd. Ferroelectric device
US5390142A (en) * 1992-05-26 1995-02-14 Kappa Numerics, Inc. Memory material and method for its manufacture
US5477482A (en) * 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
US5629922A (en) * 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
US5565695A (en) * 1995-04-21 1996-10-15 Johnson; Mark B. Magnetic spin transistor hybrid circuit element
US5629549A (en) * 1995-04-21 1997-05-13 Johnson; Mark B. Magnetic spin transistor device, logic gate & method of operation
US5638252A (en) * 1995-06-14 1997-06-10 Hughes Aircraft Company Electrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitor

Also Published As

Publication number Publication date
EP0948819A4 (en) 1999-11-10
WO1998024163A2 (en) 1998-06-04
CA2270896A1 (en) 1998-06-04
US5757056A (en) 1998-05-26
EP0948819A2 (en) 1999-10-13

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