WO1999044218A1 - Large-area fed apparatus and method for making same - Google Patents
Large-area fed apparatus and method for making same Download PDFInfo
- Publication number
- WO1999044218A1 WO1999044218A1 PCT/US1999/004382 US9904382W WO9944218A1 WO 1999044218 A1 WO1999044218 A1 WO 1999044218A1 US 9904382 W US9904382 W US 9904382W WO 9944218 A1 WO9944218 A1 WO 9944218A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- recited
- fed
- micropoints
- disposed
- spacers
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 63
- 239000000463 material Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000000605 extraction Methods 0.000 claims abstract description 47
- 239000011159 matrix material Substances 0.000 claims abstract description 24
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000006850 spacer group Chemical group 0.000 claims description 89
- 238000000151 deposition Methods 0.000 claims description 17
- 238000003631 wet chemical etching Methods 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 12
- 229910052792 caesium Inorganic materials 0.000 claims description 9
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 87
- 230000008569 process Effects 0.000 description 34
- 208000016169 Fish-eye disease Diseases 0.000 description 29
- 238000005516 engineering process Methods 0.000 description 15
- 230000006870 function Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- QXJJQWWVWRCVQT-UHFFFAOYSA-K calcium;sodium;phosphate Chemical compound [Na+].[Ca+2].[O-]P([O-])([O-])=O QXJJQWWVWRCVQT-UHFFFAOYSA-K 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 2
- 229910019878 Cr3Si Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009118 appropriate response Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/028—Mounting or supporting arrangements for flat panel cathode ray tubes, e.g. spacers particularly relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/864—Spacers between faceplate and backplate of flat panel cathode ray tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
- H01J9/185—Assembling together the component parts of electrode systems of flat panel display devices, e.g. by using spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
- H01J9/242—Spacers between faceplate and backplate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
- H01J2329/863—Spacing members characterised by the form or structure
Definitions
- the present invention relates to field emission devices ("FEDs"). More specifically, the present invention relates to large-area FED structures and the method of making such structures.
- FEDs field emission devices
- fiat panel displays In the world of computers and elsewhere, the dominate technology for constructing fiat panel displays is liquid crystal display (“LCD”) technology and the current benchmark is active matrix LCDs (“AMLCDs").
- LCD liquid crystal display
- AMLCDs active matrix LCDs
- the drawbacks of fiat panel displays constructed using AMLCD technology are the cost, power consumption, angle of view, smearing of fast moving video images, temperature range of operation, and the environmental concerns of using mercury vapor in the AMLCD's backlight.
- each micropoint resembles an inverted cone.
- the forming and sharpening of each micropoint is carried out in a conventional manner.
- the micropoints may be constructed of a number of materials, such as silicon or molybdenum, for example.
- the tips of the micropoints can be coated or treated with a low work function material.
- the structure substrate, emitter electrode, and micropoints may be formed in the following manner.
- the single crystal silicon substrate may be made from a P-type or an N-type material.
- the substrate may then be treated by conventional methods to form a series of elongated, parallel extending strips in the substrate.
- the strips are actually wells of a conductivity type opposite that of the substrate. As such, if the sub- strate is P-type, the wells will be N-type and vice-versa.
- the wells are electrically connected and form the emitter electrode for the FED.
- Each conductivity well will have a predetermined width and depth (which it is driven into the substrate).
- the number and spacing of the strips are determined to meet the desired size of field mission cathode sites to be formed on the substrate.
- the wells will be the sites over which the micropoints will be formed. No matter which of the two methods of forming the strips is used, the resulting parallel conductive strips serve as the emitter electrode and form the columns of the matrix structure.
- a micropoint or pattern of micropoints are disposed on the emitter strip. Each micropoint or pattern of micropoints are meant to illuminate one pixel of the screen display.
- faceplate 140 is fixed a predetermined distance above the top surface of the extraction structure 132. Typically, this distance is several hundred ⁇ m. This distance may be maintained by spacers that are formed by conventional methods and have the following characteristics: (1) non-conductive or highly resistive to prevent an electrical breakdown between the anode (at faceplate 140) and cathode (at emitter electrodes 104, 106, and 108), (2) mechanically strong and slow to deform, (3) stable under electron bombardment (low secondary emission yield), (4) capable of withstanding the high bakeout temperatures in the order of 500° C, and (5) small enough not to interfere with the opera- tion of the FED. Representative spacers 136 and 138 are shown in Figures 1.
- Black matrix 149 is disposed on the surface of the ITO layer 142 facing extraction structure 132.
- Black matrix 149 defines the discrete pixel areas for the screen display of the FED.
- Phosphor material is disposed on ITO layer 142 in the appropriate areas defined by black matrix 149.
- Representative phosphor material areas that define pix- els are shown at 144, 146, and 148.
- Pixels 144, 146, and 148 are aligned with the openings in extraction structure 132 so that a micropoint or group of micropoints that are meant to excite phosphor material are aligned with that pixel.
- Zinc oxide is a suitable material for the phosphor material since it can be excited by low energy electrons.
- the electron emission streams that emanate from the tips of the micropoints fan out conically from their respective tips. Some of the electrons strike the phosphors at 90° to the faceplate while others strike it at various acute angles.
- the basic structure of the FED just described generally will not include spacers when the diagonal screen size is below 5 inches.
- spacers are needed to maintain the correct separation between the emitter electrode and the faceplate under the force of atmospheric pressure on the FED.
- the need for spacers increases so this separation is properly maintained.
- An alternative to the use of spacers is the use of thick glass. However, this thick glass is heavy and expensive.
- the present invention is a large-area FED and a method of making same.
- the large-area FEDs of the present invention are those with a diagonal screen size of 10 inches of greater.
- the large-area FED of the present invention has a substrate into which an emitter electrode is formed.
- the emitter electrode consists of a number of spaced apart, parallel elements that are electrically connected.
- the elements that form the emitter electrode generally extend in one direction across the large- area FED. The width, number, and spacing of the parallel, spaced apart elements are determined by the needs of the FED.
- the low work function material also will result in more uniform performance among the micropoints across the entire large-area FED.
- Cermet Cr 3 Si+SiO 2
- cesium rubidium
- tantalum nitride barium
- chromium suicide titanium carbide
- bium are low work function materials that may be used.
- the faceplate is a cathodoluminescent screen that is transparent.
- the faceplate is capable of transmitting the light of cathodoluminescent photons, which the viewer sees.
- Another object of the present invention is to provide a large-area FED that operates at a relatively low anode voltage and has low power consumption.
- Figure 1 shows a partial cross-section of a prior art FED.
- Figure 2 is a partial top perspective view of a portion of a large-area FED with a portion cut away according to the present invention.
- Figure 4A is a side and cross-sectional view of a "+" shaped spacer.
- Figure 4B is a side and cross-sectional view of a "L" shaped spacer.
- Figure 4D is a side and cross-sectional view of a "I-beam" shaped spacer.
- Figure 5A shows a first step in the deposition, CMP process, and wet chem- ical etching method according to the present invention.
- Figure 5B shows a second step in the deposition, CMP process, and wet chemical etching method according to the present invention.
- Figure 5C shows a third step in the deposition, CMP process, and wet chemical etching method according to the present invention.
- Figure 5D shows a fourth step in the deposition, CMP process, and wet chemical etching method according to the present invention.
- a portion of a large-area FED of the present invention is shown generally at 200.
- the portion that is shown in Figure 2 is near the center of the large-area FED.
- substrate 202 has emitter electrode 204 formed therein or thereon.
- emitter electrode 204 consists of a number of spaced apart, parallel elements that are electrically connected. It is particularly useful to form the emitter electrode in the form of strips given the area that the emitter electrode must cover in a large-area FED, such as that shown in Figure 2.
- the width, number, and spacing of the parallel, spaced apart elements is determined by the needs of the FED, e.g., resolution or diagonal screen size.
- substrate 202 has emitter electrode 204 disposed over it.
- Emitter electrode 204 is the cathode conductor of the FED of the present invention.
- the use of parallel electrodes, spaced, well apart is preferred rather than a continuous emitter electrode that would cover the entire substrate because the use of the elements or strips will reduce the RC times for the large-area FED of the present invention.
- the substrate may be a single structure or it may be made from a number of sections disposed side by side. Either substrate embodiment may be used in carrying our the present invention.
- the micropoints that are placed on the emitter electrode elements are tall micropoints that have a height in thel ⁇ m range.
- these tall micropoints are formed by a conventional etch process and then a low work function material coating is placed on the micropoints according to the present invention.
- the substrate with the emitter electrode elements and coated micropoints thereon is subject to processing according to a deposition, CMP process, and wet chemical etching method of the present invention. This method will permit the micropoints formed on the emitter electrode elements to retain their size and sharpness and have improved performance in opera- tion in the large-area FED of the present invention.
- the micropoints may be coated at any of a variety of steps in the formation process.
- the micropoints may be coated by any suitable method after completion of the cathode, such as ion implantation or deposition.
- micropoints formed on the emitter electrode elements at the predetermined locations. For example, in Figure 2 at representative location 207, a square pattern of 15 x 15 may be provided. This pattern of micropoints is spaced from the adjacent patterns of micropoints on the emitter electrode elements.
- micropoints 310 are shown disposed on emitter electrode element 204, which, in turn, is disposed in substrate 202. These micropoints are part of a 5 x 5 pattern of micropoints. Although only square patterns of micropoints have been described, other patterns may be used and still be within the scope of the present invention.
- Insulating layer 302 5 electrically insulates the positive electrical elements of the large-area FED from the negative emitter electrode.
- insulating layer 302 is formed from silicon dioxide (SiO 2 ).
- Conductive layer 304 surrounds the micropoints for the purpose of causing an electron emission stream to be emitted from the micropoints.
- conductive layer 304 is a series of electrically connected, parallel strips disposed on insulating layer 15 302. The strips are shown as 305 in Figure 2.
- Conductive layer 304 serves as an extraction structure and, hereafter, will be referred to as such.
- ITO layer 308 is disposed on the bottom surface of faceplate 306 which faces extraction structure 304.
- ITO layer 308 is a layer of electrically conductive material that may be disposed as a separate layer on faceplate 306 or made as part of the faceplate.
- ITO layer 308, in any case, is transparent to the light from cathodoluminescent photons 25 and serves as the anode for the FED.
- pixel 318 is shown disposed on the surface of ITO layer 308 facing extraction structure 304. As is shown, pixel 318 is disposed above a pattern of micropoints. More particularly, pixel 318 is associated with a 5 x 5 pattern of micropoints 310. 30 The pixel areas have phosphor material 320 deposited on the bottom of ITO layer 308 in a desired pattern. Generally, the pixel areas, such as 318, are square in shape, however, if desired, other shapes may be used. The phosphor material that is used is preferably one that can be excited by low energy electrons. Preferably, the response time for the phosphor material should be in the range equal to or less than 2 ms.
- Black matrix 322 may be of any suitable material.
- the material should be opaque to the transmission of light and not affected by electron bombardment.
- An example of a suitable material is cobalt oxide.
- Faceplate 306 is spaced away from substrate 202. This is a predetermined distance usually in the 200-1000 ⁇ m range. This spacing is maintained by spacers which are shown generally as spacers 330 in Figure 2, and, more specifically, as spacers 332 and 334 in Figure 3.
- the area between faceplate 306 and substrate 202 preferably, is under high vacuum.
- the large-area FED of the present invention is connected to a power source or multiple power sources for powering the emitter electrode, electron emitter structure, and ITO so that electron streams are emitted from the micropoints directed to the pixels.
- Spacers that normally are placed in FEDs with diagonal screen sizes in the 5-8 inch range are in the form of cylindrical columns. These columns have the same height and are placed at various locations between the anode and cathode. In larger area FEDs, cyndrical spacers are not optimal and spacers with different cross-sectional configuration may be preferred.
- spacers such as spacers 332 and 334, are placed in patterns between insulating layer 302 or extraction structure 304, and ITO layer 308. These spacers are placed between the cathode and anode in such a manner that the FED is sectioned according to the patterns of the spacers.
- Fig- ure 2 which is a portion of the large-area FED near the center of the FED, there are a large number of spacers shown to maintain the anode/cathode separation. Other areas will have different patterns to maintain the desired separation.
- the spacers are in various patterns depending of area of interest within the large-area FED, even though they are cylindrical columns.
- Spacers that may be used with respect to the present invention may be formed according to U.S. Patent Nos. 5,100,838; 5,205,770; 5,232,549; 5,232,863; 5,405,791; 5,433,794; 5,486,126; and 5,492,234.
- Figure 4A, 4B, 4C and 4D show four cross-sectional shapes for spacers that may be used for large-area FEDs.
- Figure 4A at 402 shows a side and cross- sectional view of a "+" shaped spacer
- Figure 4B at 404 shows a side and cross-sectional view of a "L" shaped spacer
- Figure 4C at 406 shows a side and cross-sectional view of a square shaped spacer
- Figure 4D at 408 shows a side and cross-sectional view of an "I- beam" shaped spacer.
- the spacers at various locations in the large-area FED also may have differ- ent lengths to maintain uniform separation between the anode and cathode across the entire area of the large-area FED.
- the spacers near the center of the large-area FED may be slightly longer than the spacers near the edges.
- the spacers between these two extremes may be graded in length to transition from the shortest spacers at the edge to the longest near the center.
- the different length spacers will compensate for the slight sag- gings in the faceplate due to the high vacuum within the FED that occurs near the center that does not occur near edges because near the edges, the FED wall structure adds substantial support to the faceplate.
- the process according to the present invention will be described.
- the electrically connected emitter electrode elements 204 are formed in substrate 202
- the patterns of micropoints 310 are formed on these elements.
- the forming of the micropoints by a separate processing step provides greater control over formation of the micropoints and greater uniformity in the size of the micropoints across the entire large area of the large-area FED.
- the micropoints that are formed have a substantially inverted conical shape as shown in Figure 5A.
- the micropoints preferably are formed from silicon.
- a suitable low work function material is placed on the micropoints. This coating will be applied to at least the tips of the micropoints.
- Suitable low work func- tion materials are cermet (Cr 3 Si+Si ⁇ 2 ), cesium, rubidium, tantalum nitride, barium, chromium suicide, titanium carbide, and niobium. These are deposited on the micropoints using conventional semiconductor processing methods, such as vapor deposition, or according to the preferred method described below. It is understood that other suitable materials also may be used.
- the low work function material that is used to treat the micropoints is cesium.
- the cesium preferably is implanted on the micropoints with very low energy and at high doses.
- conductive layer 304 is deposited on insulating layer 302 as shown in Figure 5B.
- conductive layer 304 is made from amorphous silicon or polysilicon.
- the thickness of the insulating and conductive layers is selected so that the total layer thickness is greater than the height of the original micropoint. The process of the present invention allows for flexibility in material selection for the micropoints, and the insulating and conductive layers, even though silicon is the preferred material for the micropoints, and conductive layer.
- a conductor with the lowest resistance e.g., gold, silver, aluminum, copper, or other suitable material, and make the conductor thick, e.g., > 0.2 ⁇ m, or in some way increase the cross-sectional area of the line that is acting as the conductor.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000533887A JP4001460B2 (en) | 1998-02-27 | 1999-02-26 | Large area FED apparatus and method |
AT99909683T ATE249096T1 (en) | 1998-02-27 | 1999-02-26 | LARGE-AREA FIELD EMISSION IMAGE REPRODUCTION ARRANGEMENT AND METHOD FOR PRODUCTION |
AU28836/99A AU2883699A (en) | 1998-02-27 | 1999-02-26 | Large-area fed apparatus and method for making same |
DE69910979T DE69910979T2 (en) | 1998-02-27 | 1999-02-26 | LARGE AREA FIELD EMISSION IMAGE PLAYER AND METHOD FOR PRODUCING IT |
EP99909683A EP1057200B1 (en) | 1998-02-27 | 1999-02-26 | Large-area fed apparatus and method for making same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/032,127 US6255772B1 (en) | 1998-02-27 | 1998-02-27 | Large-area FED apparatus and method for making same |
US09/032,127 | 1998-02-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999044218A1 true WO1999044218A1 (en) | 1999-09-02 |
WO1999044218A9 WO1999044218A9 (en) | 2000-07-20 |
Family
ID=21863249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/004382 WO1999044218A1 (en) | 1998-02-27 | 1999-02-26 | Large-area fed apparatus and method for making same |
Country Status (8)
Country | Link |
---|---|
US (4) | US6255772B1 (en) |
EP (1) | EP1057200B1 (en) |
JP (1) | JP4001460B2 (en) |
KR (1) | KR100597056B1 (en) |
AT (1) | ATE249096T1 (en) |
AU (1) | AU2883699A (en) |
DE (1) | DE69910979T2 (en) |
WO (1) | WO1999044218A1 (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6255772B1 (en) * | 1998-02-27 | 2001-07-03 | Micron Technology, Inc. | Large-area FED apparatus and method for making same |
KR100263310B1 (en) * | 1998-04-02 | 2000-08-01 | 김순택 | Flat panel display having field emission cathode and method of preparing the same |
US6843697B2 (en) * | 1999-06-25 | 2005-01-18 | Micron Display Technology, Inc. | Black matrix for flat panel field emission displays |
US6716077B1 (en) * | 2000-05-17 | 2004-04-06 | Micron Technology, Inc. | Method of forming flow-fill structures |
JP2002033058A (en) * | 2000-07-14 | 2002-01-31 | Sony Corp | Front plate for field emission type display device |
US6944032B1 (en) * | 2001-04-12 | 2005-09-13 | Rockwell Collins | Interconnect for flat panel displays |
KR100444506B1 (en) * | 2001-12-27 | 2004-08-16 | 엘지전자 주식회사 | Spacer in field emission display and method of forming and installing the same |
US7005807B1 (en) * | 2002-05-30 | 2006-02-28 | Cdream Corporation | Negative voltage driving of a carbon nanotube field emissive display |
US7170223B2 (en) * | 2002-07-17 | 2007-01-30 | Hewlett-Packard Development Company, L.P. | Emitter with dielectric layer having implanted conducting centers |
TWI223307B (en) * | 2003-06-24 | 2004-11-01 | Ind Tech Res Inst | Method of forming spacers on a substrate |
KR20060059616A (en) * | 2004-11-29 | 2006-06-02 | 삼성에스디아이 주식회사 | Electron emission display device having a spacer |
KR101173859B1 (en) * | 2006-01-31 | 2012-08-14 | 삼성에스디아이 주식회사 | Spacer and electron emission display device having the same |
FR2899291B1 (en) * | 2006-03-31 | 2010-11-12 | Airbus France | NUT FOR FIXING AN AIRCRAFT WINDSHIELD AND DEVICE FOR FIXING AN AIRCRAFT WINDSHIELD INCORPORATING SAID NUT |
KR20080079838A (en) * | 2007-02-28 | 2008-09-02 | 삼성에스디아이 주식회사 | Light emission device and display device provided with the same |
US7993977B2 (en) * | 2007-07-02 | 2011-08-09 | Micron Technology, Inc. | Method of forming molded standoff structures on integrated circuit devices |
KR100869804B1 (en) * | 2007-07-03 | 2008-11-21 | 삼성에스디아이 주식회사 | Light emission device and display device |
JP2009076447A (en) * | 2007-08-27 | 2009-04-09 | Hitachi High-Technologies Corp | Scanning electron microscope |
US20090058257A1 (en) * | 2007-08-28 | 2009-03-05 | Motorola, Inc. | Actively controlled distributed backlight for a liquid crystal display |
DE102007043639A1 (en) * | 2007-09-13 | 2009-04-09 | Siemens Ag | Rotating component i.e. rotary shaft, and stationary component connecting arrangement, has electric contact elements at components, and nano tips provided at surfaces of elements, where external voltage is applied between elements |
JP2010009988A (en) * | 2008-06-27 | 2010-01-14 | Canon Inc | Light-emitting screen, and image display apparatus |
US8664622B2 (en) * | 2012-04-11 | 2014-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of ion beam source for semiconductor ion implantation |
US9853243B2 (en) | 2013-07-05 | 2017-12-26 | Industrial Technology Research Institute | Flexible display and method for fabricating the same |
WO2015171936A1 (en) * | 2014-05-08 | 2015-11-12 | Advanced Green Technologies, Llc | Fuel injection systems with enhanced corona burst |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3678325A (en) * | 1969-03-14 | 1972-07-18 | Matsushita Electric Ind Co Ltd | High-field emission cathodes and methods for preparing the cathodes |
WO1988001098A1 (en) * | 1986-07-30 | 1988-02-11 | Commtech International Management Corporation | Matrix-addressed flat panel display |
US4857161A (en) * | 1986-01-24 | 1989-08-15 | Commissariat A L'energie Atomique | Process for the production of a display means by cathodoluminescence excited by field emission |
US4908539A (en) * | 1984-07-24 | 1990-03-13 | Commissariat A L'energie Atomique | Display unit by cathodoluminescence excited by field emission |
EP0404022A2 (en) * | 1989-06-19 | 1990-12-27 | Matsushita Electric Industrial Co., Ltd. | Flat configuration image display apparatus and manufacturing method thereof |
US5089292A (en) * | 1990-07-20 | 1992-02-18 | Coloray Display Corporation | Field emission cathode array coated with electron work function reducing material, and method |
EP0483814A2 (en) * | 1990-10-30 | 1992-05-06 | Sony Corporation | Field emission type emitter and method of manufacturing thereof |
EP0496450A1 (en) * | 1991-01-25 | 1992-07-29 | Koninklijke Philips Electronics N.V. | Display device |
US5186670A (en) * | 1992-03-02 | 1993-02-16 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
US5210472A (en) * | 1992-04-07 | 1993-05-11 | Micron Technology, Inc. | Flat panel display in which low-voltage row and column address signals control a much pixel activation voltage |
WO1994015352A1 (en) * | 1992-12-23 | 1994-07-07 | Microelectronics And Computer Technology Corporation | Triode structure flat panel display employing flat field emission cathodes |
DE19616486A1 (en) | 1996-04-25 | 1997-10-30 | Knoell Hans Forschung Ev | Method of lowering blood glucose levels in mammals |
WO1997042645A1 (en) * | 1996-05-08 | 1997-11-13 | Evgeny Invievich Givargizov | Field emission triode, a device based thereon, and a method for its fabrication |
US5772488A (en) * | 1995-10-16 | 1998-06-30 | Micron Display Technology, Inc. | Method of forming a doped field emitter array |
US9709421B2 (en) | 2009-10-02 | 2017-07-18 | Badger Meter, Inc. | Method and system for providing web-enabled cellular access to meter reading data |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5614781A (en) * | 1992-04-10 | 1997-03-25 | Candescent Technologies Corporation | Structure and operation of high voltage supports |
US5100838A (en) | 1990-10-04 | 1992-03-31 | Micron Technology, Inc. | Method for forming self-aligned conducting pillars in an (IC) fabrication process |
US5240552A (en) | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5259719A (en) | 1991-12-30 | 1993-11-09 | Intelmatec Corporation | Apparatus for transferring disks between a cassette and a pallet |
JP3021995B2 (en) | 1992-01-22 | 2000-03-15 | 三菱電機株式会社 | Display element |
US5514245A (en) | 1992-01-27 | 1996-05-07 | Micron Technology, Inc. | Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches |
US5229331A (en) | 1992-02-14 | 1993-07-20 | Micron Technology, Inc. | Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology |
JPH05242796A (en) * | 1992-02-28 | 1993-09-21 | Matsushita Electric Ind Co Ltd | Manufacture of electron emission element |
US5653619A (en) * | 1992-03-02 | 1997-08-05 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
US5205770A (en) | 1992-03-12 | 1993-04-27 | Micron Technology, Inc. | Method to form high aspect ratio supports (spacers) for field emission display using micro-saw technology |
JPH05274998A (en) | 1992-03-23 | 1993-10-22 | Shimadzu Corp | Electron emission element |
US5232549A (en) | 1992-04-14 | 1993-08-03 | Micron Technology, Inc. | Spacers for field emission display fabricated via self-aligned high energy ablation |
US5329207A (en) * | 1992-05-13 | 1994-07-12 | Micron Technology, Inc. | Field emission structures produced on macro-grain polysilicon substrates |
US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
US5209816A (en) | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
US5232863A (en) | 1992-10-20 | 1993-08-03 | Micron Semiconductor, Inc. | Method of forming electrical contact between a field effect transistor gate and a remote active area |
US5433794A (en) | 1992-12-10 | 1995-07-18 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
US5300155A (en) | 1992-12-23 | 1994-04-05 | Micron Semiconductor, Inc. | IC chemical mechanical planarization process incorporating slurry temperature control |
JPH08507643A (en) | 1993-03-11 | 1996-08-13 | フェド.コーポレイション | Emitter tip structure, field emission device including the emitter tip structure, and method of manufacturing the same |
US5318927A (en) | 1993-04-29 | 1994-06-07 | Micron Semiconductor, Inc. | Methods of chemical-mechanical polishing insulating inorganic metal oxide materials |
JPH06342635A (en) | 1993-06-01 | 1994-12-13 | Canon Inc | Image display device |
US5395801A (en) | 1993-09-29 | 1995-03-07 | Micron Semiconductor, Inc. | Chemical-mechanical polishing processes of planarizing insulating layers |
US5439551A (en) | 1994-03-02 | 1995-08-08 | Micron Technology, Inc. | Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes |
US5448131A (en) * | 1994-04-13 | 1995-09-05 | Texas Instruments Incorporated | Spacer for flat panel display |
US5449314A (en) | 1994-04-25 | 1995-09-12 | Micron Technology, Inc. | Method of chimical mechanical polishing for dielectric layers |
US5405791A (en) | 1994-10-04 | 1995-04-11 | Micron Semiconductor, Inc. | Process for fabricating ULSI CMOS circuits using a single polysilicon gate layer and disposable spacers |
US5492234A (en) | 1994-10-13 | 1996-02-20 | Micron Technology, Inc. | Method for fabricating spacer support structures useful in flat panel displays |
US5486126A (en) | 1994-11-18 | 1996-01-23 | Micron Display Technology, Inc. | Spacers for large area displays |
US5578899A (en) * | 1994-11-21 | 1996-11-26 | Silicon Video Corporation | Field emission device with internal structure for aligning phosphor pixels with corresponding field emitters |
US5789857A (en) * | 1994-11-22 | 1998-08-04 | Futaba Denshi Kogyo K.K. | Flat display panel having spacers |
JP3526673B2 (en) * | 1995-10-09 | 2004-05-17 | 富士通株式会社 | Electron-emitting device, electron-emitting device array, cathode plate, their manufacturing method, and flat display device |
US5859497A (en) | 1995-12-18 | 1999-01-12 | Motorola | Stand-alone spacer for a flat panel display |
JPH09306395A (en) | 1996-05-20 | 1997-11-28 | Toshiba Corp | Plane type display device and manufacture therefor |
US5708325A (en) * | 1996-05-20 | 1998-01-13 | Motorola | Display spacer structure for a field emission device |
US5811927A (en) * | 1996-06-21 | 1998-09-22 | Motorola, Inc. | Method for affixing spacers within a flat panel display |
US6130106A (en) * | 1996-11-14 | 2000-10-10 | Micron Technology, Inc. | Method for limiting emission current in field emission devices |
US5851133A (en) * | 1996-12-24 | 1998-12-22 | Micron Display Technology, Inc. | FED spacer fibers grown by laser drive CVD |
US5980349A (en) * | 1997-05-14 | 1999-11-09 | Micron Technology, Inc. | Anodically-bonded elements for flat panel displays |
US6033924A (en) * | 1997-07-25 | 2000-03-07 | Motorola, Inc. | Method for fabricating a field emission device |
US5956611A (en) * | 1997-09-03 | 1999-09-21 | Micron Technologies, Inc. | Field emission displays with reduced light leakage |
US6255772B1 (en) * | 1998-02-27 | 2001-07-03 | Micron Technology, Inc. | Large-area FED apparatus and method for making same |
US6232705B1 (en) * | 1998-09-01 | 2001-05-15 | Micron Technology, Inc. | Field emitter arrays with gate insulator and cathode formed from single layer of polysilicon |
US6733354B1 (en) * | 2000-08-31 | 2004-05-11 | Micron Technology, Inc. | Spacers for field emission displays |
-
1998
- 1998-02-27 US US09/032,127 patent/US6255772B1/en not_active Expired - Lifetime
-
1999
- 1999-02-26 EP EP99909683A patent/EP1057200B1/en not_active Expired - Lifetime
- 1999-02-26 AU AU28836/99A patent/AU2883699A/en not_active Abandoned
- 1999-02-26 KR KR1020007009573A patent/KR100597056B1/en not_active IP Right Cessation
- 1999-02-26 WO PCT/US1999/004382 patent/WO1999044218A1/en active IP Right Grant
- 1999-02-26 DE DE69910979T patent/DE69910979T2/en not_active Expired - Lifetime
- 1999-02-26 AT AT99909683T patent/ATE249096T1/en not_active IP Right Cessation
- 1999-02-26 JP JP2000533887A patent/JP4001460B2/en not_active Expired - Fee Related
-
2001
- 2001-05-30 US US09/867,912 patent/US6495956B2/en not_active Expired - Lifetime
-
2002
- 2002-10-02 US US10/262,747 patent/US7033238B2/en not_active Expired - Fee Related
-
2006
- 2006-04-17 US US11/405,112 patent/US7462088B2/en not_active Expired - Fee Related
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3678325A (en) * | 1969-03-14 | 1972-07-18 | Matsushita Electric Ind Co Ltd | High-field emission cathodes and methods for preparing the cathodes |
US4908539A (en) * | 1984-07-24 | 1990-03-13 | Commissariat A L'energie Atomique | Display unit by cathodoluminescence excited by field emission |
US4857161A (en) * | 1986-01-24 | 1989-08-15 | Commissariat A L'energie Atomique | Process for the production of a display means by cathodoluminescence excited by field emission |
WO1988001098A1 (en) * | 1986-07-30 | 1988-02-11 | Commtech International Management Corporation | Matrix-addressed flat panel display |
EP0404022A2 (en) * | 1989-06-19 | 1990-12-27 | Matsushita Electric Industrial Co., Ltd. | Flat configuration image display apparatus and manufacturing method thereof |
US5089292A (en) * | 1990-07-20 | 1992-02-18 | Coloray Display Corporation | Field emission cathode array coated with electron work function reducing material, and method |
EP0483814A2 (en) * | 1990-10-30 | 1992-05-06 | Sony Corporation | Field emission type emitter and method of manufacturing thereof |
EP0496450A1 (en) * | 1991-01-25 | 1992-07-29 | Koninklijke Philips Electronics N.V. | Display device |
US5186670A (en) * | 1992-03-02 | 1993-02-16 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
US5210472A (en) * | 1992-04-07 | 1993-05-11 | Micron Technology, Inc. | Flat panel display in which low-voltage row and column address signals control a much pixel activation voltage |
WO1994015352A1 (en) * | 1992-12-23 | 1994-07-07 | Microelectronics And Computer Technology Corporation | Triode structure flat panel display employing flat field emission cathodes |
US5772488A (en) * | 1995-10-16 | 1998-06-30 | Micron Display Technology, Inc. | Method of forming a doped field emitter array |
DE19616486A1 (en) | 1996-04-25 | 1997-10-30 | Knoell Hans Forschung Ev | Method of lowering blood glucose levels in mammals |
WO1997042645A1 (en) * | 1996-05-08 | 1997-11-13 | Evgeny Invievich Givargizov | Field emission triode, a device based thereon, and a method for its fabrication |
US9709421B2 (en) | 2009-10-02 | 2017-07-18 | Badger Meter, Inc. | Method and system for providing web-enabled cellular access to meter reading data |
Non-Patent Citations (5)
Title |
---|
MENTLEIN, R., DAHMS, P., GRANDT, D., KRUGER, R: "Proteolytic processing of neuropeptide Y and peptide YY by dipeptidyl peptidase IV", REGUL. PEPT., vol. 49, no. 133, 1993 |
TANAKA M ET AL: "6.1: INVITED PAPER: A NEW STRUCTURE AND DRIVING SYSTEM FOR FULL -COLOR FEDS", 1997 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, BOSTON, MAY 13 - 15, 1997, NR. VOL. 28, PAGE(S) 47 - 51, SOCIETY FOR INFORMATION DISPLAY, ISSN: 0097-966X, XP000722655 * |
VAUDAINE P ET AL: ""MICROTIPS" FLUORESCENT DISPLAY", PROCEEDINGS OF THE INTERNATIONAL ELECTRON DEVICES MEETING, WASHINGTON, DEC. 8 - 11, 1991, PAGE(S) 91/197 - 200, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, ISBN: 0-7803-0243-5, XP000342125 * |
Wakselman, M., Nguyen, C., Mazaleyrat, J.-P., Callebaut, C., Krust, B., Hovanessian, A.G., Inhibition of HIV-1 infection of CD 26+but not CD26-cells by a potent cyclopeptidic inhibitor of the DPP IV activity of CD 26. Abstract P 44 of the 24th European Peptide Symposium 1996. |
WETZL, W. ET AL: "Effects of the CLIP fragment ACTH 20-24 on the duration of REM sleep episodes", NEUROPEPTIDES, vol. 31, no. 1, 1997, pages 41 - 45 |
Also Published As
Publication number | Publication date |
---|---|
JP2002505503A (en) | 2002-02-19 |
US7033238B2 (en) | 2006-04-25 |
US20030038588A1 (en) | 2003-02-27 |
EP1057200B1 (en) | 2003-09-03 |
AU2883699A (en) | 1999-09-15 |
US6255772B1 (en) | 2001-07-03 |
US20010054866A1 (en) | 2001-12-27 |
DE69910979T2 (en) | 2004-07-22 |
ATE249096T1 (en) | 2003-09-15 |
EP1057200A1 (en) | 2000-12-06 |
DE69910979D1 (en) | 2003-10-09 |
KR100597056B1 (en) | 2006-07-06 |
KR20010041434A (en) | 2001-05-25 |
WO1999044218A9 (en) | 2000-07-20 |
US20060189244A1 (en) | 2006-08-24 |
US7462088B2 (en) | 2008-12-09 |
US6495956B2 (en) | 2002-12-17 |
JP4001460B2 (en) | 2007-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7462088B2 (en) | Method for making large-area FED apparatus | |
US6359383B1 (en) | Field emission display device equipped with nanotube emitters and method for fabricating | |
US7156715B2 (en) | Triode structure of field emission display and fabrication method thereof | |
US5621272A (en) | Field emission device with over-etched gate dielectric | |
US20060220527A1 (en) | Electron emission device, electron emission display device using the same and method of manufacturing the same | |
US5710483A (en) | Field emission device with micromesh collimator | |
KR100343222B1 (en) | Method for fabricating field emission display | |
US6081246A (en) | Method and apparatus for adjustment of FED image | |
US5920151A (en) | Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor | |
KR101009983B1 (en) | Electron emission display | |
US20040145299A1 (en) | Line patterned gate structure for a field emission display | |
KR100351068B1 (en) | field emission display and manufacturing method thereof | |
US20010024920A1 (en) | Composite self-aligned extraction grid and in-plane focusing ring, and method of manufacture | |
US5538450A (en) | Method of forming a size-arrayed emitter matrix for use in a flat panel display | |
US6013974A (en) | Electron-emitting device having focus coating that extends partway into focus openings | |
US6225761B1 (en) | Field emission display having an offset phosphor and method for the operation thereof | |
US5989976A (en) | Fabrication method for a field emission display emitter | |
KR940011723B1 (en) | Method of manufacturing fed | |
KR100322732B1 (en) | Field emission display and method for fabricating the same | |
KR20020039699A (en) | A field emission display and manufacturing method for it | |
WO1998054745A1 (en) | Structure and fabrication of electron-emitting device having specially configured focus coating | |
KR970010990B1 (en) | Eld element and its manufacturing method | |
KR100795176B1 (en) | Field emission device and method of manufacturing the same | |
KR20040051469A (en) | Triode field emission device having mesh gate and field emission display using the same | |
US20060113888A1 (en) | Field emission display device with protection structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG UZ VN YU ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW SD SL SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: C2 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG UZ VN YU ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: C2 Designated state(s): GH GM KE LS MW SD SL SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
COP | Corrected version of pamphlet |
Free format text: PAGES 1/5-5/5, DRAWINGS, REPLACED BY NEW PAGES 1/5-5/5; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2000 533887 Kind code of ref document: A Format of ref document f/p: F |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020007009573 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1999909683 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1999909683 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWP | Wipo information: published in national office |
Ref document number: 1020007009573 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 1999909683 Country of ref document: EP |
|
WWG | Wipo information: grant in national office |
Ref document number: 1020007009573 Country of ref document: KR |