WO2000036037A1 - Compositions and methods for polishing semiconductor wafers - Google Patents

Compositions and methods for polishing semiconductor wafers Download PDF

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Publication number
WO2000036037A1
WO2000036037A1 PCT/US1999/030154 US9930154W WO0036037A1 WO 2000036037 A1 WO2000036037 A1 WO 2000036037A1 US 9930154 W US9930154 W US 9930154W WO 0036037 A1 WO0036037 A1 WO 0036037A1
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WIPO (PCT)
Prior art keywords
amino alcohol
abrasive particles
polishing
tris
amino
Prior art date
Application number
PCT/US1999/030154
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French (fr)
Inventor
James Shen
Wesley D. Costas
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Rodel Holdings, Inc.
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Application filed by Rodel Holdings, Inc. filed Critical Rodel Holdings, Inc.
Publication of WO2000036037A1 publication Critical patent/WO2000036037A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric

Definitions

  • the present invention relates to compositions which are useful as slurries used during the chemical mechanical polishing of substrates, especially those comprised of silica, silicates or silicon nitride.
  • CMP chemical-mechanical polishing
  • a slurry is used in conjunction with a polishing pad to facilitate the removal of an insulator or dielectric material.
  • this insulating or dielectric material is SiO 2
  • H 2 O hydration reaction
  • Dissolution of this network generally occurs above a pH of 9.0 because of the solubility of the reaction product at high pH.
  • a high pH is desirable to achieve a high removal rate.
  • Silicon Nitride while chemically dissimilar to SiO 2 , has shown generally similar polishing behavior.
  • formulations shown to be suitable for the polishing of SiO 2 are also effective for silicon nitride, albeit at lower rates.
  • bases such as KOH and N ⁇ UOH are used to yield a pH of 10-1 1 in commercial production of polishing slurries useful for CMP of insulating layers.
  • Yu et al. in USP 5,244,534 describe a CMP step for removing insulation material from around a metal plug.
  • an oxide insulation material such as SiO
  • etchants selective to the oxide
  • It is an object of this invention to provide dispersions of silicon dioxide which do not gel or settle out and, if there is sedimentation, that the sediment be easily redispersed.
  • a further object of this invention is to provide slurries useful for the chemical-mechanical polishing of insulation layers on semiconductor wafers which are stable and provide a high quality surface for the semiconductor wafers upon polishing.
  • Stable dispersions of submicron abrasive particles are provided by using an amino alcohol as a stabilizing component.
  • a composition suitable for polishing an insulating or barrier layer, comprising: water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component which interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide.
  • the composition provided is most useful when the pH of the composition is adjusted to between 9 and 12.
  • a polymer additive for a CMP slurry which provides a polished surface with less surface roughness and fewer scratches than when the slurry is used without such an additive is another aspect of this invention.
  • the additive is defined as an organic polymer having a degree of polymerization of at least five comprising a plurality of moieties having affinity to surface groups contained on insulating layer surfaces. These groups are commonly polar moieties, such as, but not limited to, hydroxy, carboxy, carbonyl, alkoxy, sulphonyl, and phosphonyl.
  • Examples of this type of molecule include poly-vinyl alcohol, poly-vinylpyrrolidone, poly-methyl methacrylate, poly- formaldehyde, poly-ethylene oxide, poly-ethylene glycol, and poly-methacrylic acid.
  • This additive is disclosed in Patent Application Serial Number 09/329,225 which is made a part of this specification by reference. In the previous application, the additive was made a part of the CMP slurry to provide silica rate suppression.
  • the polymer additive in the present invention provides a polished surface with less surface roughness and fewer scratches.
  • a further aspect of the present invention is a process for polishing insulating layers in which the slurry, used in combination with a standard polishing machine and a polishing pad, is comprised of water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component that interacts with the surface being polished.
  • the composition provided is most useful when the pH of the composition is adjusted to between 9 and 12.
  • a further aspect of the present invention is a process for CMP of a semiconductor wafer in which the slurry, used in combination with a standard polishing machine and a polishing pad, comprises an organic polymer having a degree of polymerization of at least five with a plurality of moieties having affinity to surface groups contained on insulating layer surfaces.
  • hydroxides such as potassium hydroxide, ammonium hydroxide, and sodium hydroxide, and amines have been used as dispersing agents for CMP slurry abrasives. It has been found that a class of compounds known as amino alcohols provide excellent dispersion results both in the predispersed abrasive concentrates and in the CMP slurry compositions which are made from the predispersed abrasive concentrates.
  • the above amino alcohols may be obtained from ANGUS Chemical Company, Buffalo Grove, IL.
  • the above compounds are: AMP, 2-amino-2-methyl-l-propanol; DMAMP, 2-dimethylamino-2-methyl- 1 -propanol; and TRIS AMINO ® , tris(hydroxymethyl)aminomethane.
  • Amino alcohols are defined as organic compounds which contain at least one amino group and one hydroxyl group.
  • amino alcohols may be used at 0.01% to 10% by weight in the aqueous dispersions of submicron abrasive particles according to this invention.
  • Submicron abrasive particles which might be stabilized with the amino alcohols include, but are not limited to, silica, ceria, alumina, titania, and silica gel.
  • the submicron abrasive particles should have a primary particle size in the range of 5 nanometers to 100 nanometers. Primary particle size can be determined by TEM imaging where the smallest particles are measured even if shown as part of an agglomeration.
  • the stabilized abrasive particles of this invention must have along with them a chemically interactive component that interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide.
  • a chemically interactive component that interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide.
  • Table 2 illustrates this fact, plus the fact that the addition of a small amount of a compound may provide a polished surface with less surface roughness and fewer scratches than when the slurry is used without such a compound.
  • This compound is defined as an organic polymer having a degree of polymerization of at least five with a plurality of moieties having affinity to surface groups contained on insulating layer surfaces.
  • These groups are commonly polar moieties, such as, but not limited to, hydroxy, carboxy, carbonyl, alkoxy, sulphonyl, and phosphonyl.
  • Examples of this type of molecule include poly-vinyl alcohol, poly-vinylpyrrolidone, poly-methyl methacrylate, poly-formaldehyde, poly-ethylene oxide, poly-ethylene glycol, and poly- methacrylic acid.
  • PVP poly-vinylpyrrolidone
  • Example 2 the polishing tests on TEOS wafers shown in Table 2 were carried out on a Strasbaugh 6DS-SP polisher under the following conditions: Time, 120 sec; Down force, 7 psi; Back pressure, 0.5 psi; Platen speed, 51 rpm; Carrier speed, 41 rpm; Temperature, ambient; Slurry flow, 125 ml/min; Slurry dilution ratio, 1 :1 with DI water; Pad type, conventional urethane pad. Table 2
  • A-70 fumed silica powder with a surface area of 70 - 100 m /g
  • PVP poly-vinylpyrrolidone
  • A-130 fumed silica powder with a surface area of 120 - 140 m /g
  • the table also shows the improvement in surface roughness which occurs upon addition of an organic polymer (PVP) to a CMP slurry.
  • the surface measurements were obtained using an Atomic Force Microscope (AFM) available from Digital Instruments, Inc. Using the tapping mode, a silicon tip, and a measurement area of 10 microns by 10 microns, the root mean square (RMS) roughness and the peak to valley (P-V) roughness were determined. Surface condition can be observed from the images provided by the AFM.
  • Figures 1 to 4 show AFM images of the wafer surfaces after polishing with slurries G, H, L, and M. These images dramatically show the improvement in surface condition when using an organic polymer in the slurries. Such a polymer would typically be used in concentrations of 0.01% to 5% in the slurries of this invention.

Abstract

Stable dispersions of submicron abrasive particles are provided by using an amino alcohol as a stabilizing component. A composition is provided, suitable for polishing an insulating or barrier layer, comprising: water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component which interacts with the surface being polished. Also provided is an additive for CMP polishing slurries which is an organic polymer having a degree of polymerization of at least five, the polymer having a plurality of moieties with affinity to surface groups on the surface being polished.

Description

COMPOSITIONS AND METHODS FOR POLISHING SEMICONDUCTOR
WAFERS
This application claims the benefit of copending provisional application
60/1 12,601 filed December 17, 1998.
BACKGROUND OF THE INVENTION
Field of the Invention
The present invention relates to compositions which are useful as slurries used during the chemical mechanical polishing of substrates, especially those comprised of silica, silicates or silicon nitride.
Description of Related Art During the chemical-mechanical polishing (CMP) of interlayer dielectrics used in the manufacture of integrated circuits a slurry is used in conjunction with a polishing pad to facilitate the removal of an insulator or dielectric material. In most CMP applications this insulating or dielectric material is SiO2 In an aqueous environment the surface undergoes a hydration reaction with H2O to produce a surface network of hydroxylated Si molecules. Dissolution of this network generally occurs above a pH of 9.0 because of the solubility of the reaction product at high pH. Also, a high pH is desirable to achieve a high removal rate. Silicon Nitride, while chemically dissimilar to SiO2, has shown generally similar polishing behavior. Thus, formulations shown to be suitable for the polishing of SiO2 are also effective for silicon nitride, albeit at lower rates. To achieve this high pH, bases such as KOH and NΗUOH are used to yield a pH of 10-1 1 in commercial production of polishing slurries useful for CMP of insulating layers.
For example, Yu et al. in USP 5,244,534 describe a CMP step for removing insulation material from around a metal plug. To remove an oxide insulation material, such as SiO , they describe the use of a colloidal silica slurry containing etchants selective to the oxide, such as a basic mixture of H20 and KOH. (col.4, lines 59-64). It is imperative in the slurries useful for CMP removal of insulating materials that the dispersions of silicon dioxide particles upon which these slurries are based be stable. It is an object of this invention to provide dispersions of silicon dioxide which do not gel or settle out and, if there is sedimentation, that the sediment be easily redispersed. A further object of this invention is to provide slurries useful for the chemical-mechanical polishing of insulation layers on semiconductor wafers which are stable and provide a high quality surface for the semiconductor wafers upon polishing.
SUMMARY OF THE INVENTION
Stable dispersions of submicron abrasive particles are provided by using an amino alcohol as a stabilizing component.
A composition is provided, suitable for polishing an insulating or barrier layer, comprising: water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component which interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide. The composition provided is most useful when the pH of the composition is adjusted to between 9 and 12.
A polymer additive for a CMP slurry which provides a polished surface with less surface roughness and fewer scratches than when the slurry is used without such an additive is another aspect of this invention. The additive is defined as an organic polymer having a degree of polymerization of at least five comprising a plurality of moieties having affinity to surface groups contained on insulating layer surfaces. These groups are commonly polar moieties, such as, but not limited to, hydroxy, carboxy, carbonyl, alkoxy, sulphonyl, and phosphonyl. Examples of this type of molecule include poly-vinyl alcohol, poly-vinylpyrrolidone, poly-methyl methacrylate, poly- formaldehyde, poly-ethylene oxide, poly-ethylene glycol, and poly-methacrylic acid. This additive is disclosed in Patent Application Serial Number 09/329,225 which is made a part of this specification by reference. In the previous application, the additive was made a part of the CMP slurry to provide silica rate suppression. The polymer additive in the present invention provides a polished surface with less surface roughness and fewer scratches.
A further aspect of the present invention is a process for polishing insulating layers in which the slurry, used in combination with a standard polishing machine and a polishing pad, is comprised of water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component that interacts with the surface being polished. The composition provided is most useful when the pH of the composition is adjusted to between 9 and 12. A further aspect of the present invention is a process for CMP of a semiconductor wafer in which the slurry, used in combination with a standard polishing machine and a polishing pad, comprises an organic polymer having a degree of polymerization of at least five with a plurality of moieties having affinity to surface groups contained on insulating layer surfaces.
DETAILED DESCRIPTION OF THE INVENTION
Commonly hydroxides, such as potassium hydroxide, ammonium hydroxide, and sodium hydroxide, and amines have been used as dispersing agents for CMP slurry abrasives. It has been found that a class of compounds known as amino alcohols provide excellent dispersion results both in the predispersed abrasive concentrates and in the CMP slurry compositions which are made from the predispersed abrasive concentrates.
EXAMPLE 1
Four abrasive concentrates each containing 25% by weight of silica particles were made from NAC A-70 milled silica (fumed silica powder available from Nippon Areosol Corp., surface area 70 - 100 m2/g). Table 1
Sample Dispersing Weight % pH 5 week 5 week Agent Sediment Redispersability
Height, mm
A AMP-95 3.4 11.2 2.3 total
B DMAMP- 2.5 11.2 5 total 80
C TRIS 5.0 10.1 thin film total AMINO®
D 45% KOH 1.15 11.1 5 partial
The above amino alcohols may be obtained from ANGUS Chemical Company, Buffalo Grove, IL. The above compounds are: AMP, 2-amino-2-methyl-l-propanol; DMAMP, 2-dimethylamino-2-methyl- 1 -propanol; and TRIS AMINO® , tris(hydroxymethyl)aminomethane.
Amino alcohols are defined as organic compounds which contain at least one amino group and one hydroxyl group.
To provide stability amino alcohols may be used at 0.01% to 10% by weight in the aqueous dispersions of submicron abrasive particles according to this invention.
Submicron abrasive particles which might be stabilized with the amino alcohols include, but are not limited to, silica, ceria, alumina, titania, and silica gel. The submicron abrasive particles should have a primary particle size in the range of 5 nanometers to 100 nanometers. Primary particle size can be determined by TEM imaging where the smallest particles are measured even if shown as part of an agglomeration.
Slurries A and B above when used for CMP of a silicon dioxide surface show no removal of the silicon dioxide surface. These tests were carried out on a Strasbaugh 6DS-SP polishing machine under the following conditions: Time, 120 sec; Down force, 7 psi; Back pressure, 0.5 psi; Platen speed, 20 rpm; Carrier speed, 15 rpm; Temperature, 21 °C; Slurry flow, 125 ml/min; Slurry dilution ratio, 1 : 1 with DI water; Pad type, conventional urethane pad. Commonly used insulating layers found on semiconductor wafers are silicon dioxide, silicates, TEOS, and BPSG. These insulating materials as well as some barrier layers, such as silicon nitride, can be effectively polished with CMP slurries of this invention.
EXAMPLE 2
In order to be an effective slurry for use in the polishing of an insulating or barrier layer surface, the stabilized abrasive particles of this invention must have along with them a chemically interactive component that interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide. The following Table 2 illustrates this fact, plus the fact that the addition of a small amount of a compound may provide a polished surface with less surface roughness and fewer scratches than when the slurry is used without such a compound. This compound is defined as an organic polymer having a degree of polymerization of at least five with a plurality of moieties having affinity to surface groups contained on insulating layer surfaces. These groups are commonly polar moieties, such as, but not limited to, hydroxy, carboxy, carbonyl, alkoxy, sulphonyl, and phosphonyl. Examples of this type of molecule include poly-vinyl alcohol, poly-vinylpyrrolidone, poly-methyl methacrylate, poly-formaldehyde, poly-ethylene oxide, poly-ethylene glycol, and poly- methacrylic acid. In the slurries of Table 2 PVP (poly-vinylpyrrolidone) is used for this purpose.
As in Example 1, the polishing tests on TEOS wafers shown in Table 2 were carried out on a Strasbaugh 6DS-SP polisher under the following conditions: Time, 120 sec; Down force, 7 psi; Back pressure, 0.5 psi; Platen speed, 51 rpm; Carrier speed, 41 rpm; Temperature, ambient; Slurry flow, 125 ml/min; Slurry dilution ratio, 1 :1 with DI water; Pad type, conventional urethane pad. Table 2
Slurry Composition li02 RR Roughness
Weight % A/min RMS P-V nm nm
E 25% A-70, 1.7% TA 0
F E + 2.35% NH4OH(30%) 1600 .40 5.1
G E + 0.38% KOH 1800 .30 3.9
H G + 0.2% PVP 1800 .26 3.9
J 20% A- 130, 1% TA 0
K J + 1.08% NH,OH (30%) 1500 .40 5.5
L J + 0.36% KOH 1600 .42 5.2
M L + 0.2% PVP 1900 .28 5.0
A-70 = fumed silica powder with a surface area of 70 - 100 m /g
TA = Tris(hydroxymethyl)aminomethane
PVP = poly-vinylpyrrolidone
A-130 = fumed silica powder with a surface area of 120 - 140 m /g
It is obvious from the above table that a compound which interacts with the surface being polished must be added to an abrasive particle slurry in order to get removal of an insulating layer.
The table also shows the improvement in surface roughness which occurs upon addition of an organic polymer (PVP) to a CMP slurry. The surface measurements were obtained using an Atomic Force Microscope (AFM) available from Digital Instruments, Inc. Using the tapping mode, a silicon tip, and a measurement area of 10 microns by 10 microns, the root mean square (RMS) roughness and the peak to valley (P-V) roughness were determined. Surface condition can be observed from the images provided by the AFM. Figures 1 to 4 show AFM images of the wafer surfaces after polishing with slurries G, H, L, and M. These images dramatically show the improvement in surface condition when using an organic polymer in the slurries. Such a polymer would typically be used in concentrations of 0.01% to 5% in the slurries of this invention.
The present invention may be embodied in forms other than those shown above so that one should look to the claims below rather than the foregoing specification as indicating the scope of the invention.

Claims

1. A stable dispersion of submicron abrasive particles in which an amino alcohol is a stabilizing component.
2. A stable dispersion according to claim 1 wherein said submicron abrasive particles are silica.
3. A stable dispersion according to claim 1 wherein said amino alcohol is from the group consisting of 2-amino-2methyl-l-propanol, 2-dimethylamino-2-methyl-l- propanol, and tris(hydroxymethyl)aminomethane.
4. A stable dispersion according to claim 3 wherein said amino alcohol is tris(hydroxymethyl)aminomethane.
5. A composition suitable for polishing an insulating or barrier layer comprising: water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component which interacts with the surface being polished.
6. A composition according to claim 5 wherein said chemically interactive component is from the group consisting of potassium hydroxide and ammonium hydroxide.
7. A composition according to claim 5 also comprising an organic polymer having a degree of polymerization of at least five, said polymer having a plurality of moieties with affinity to surface groups on said semiconductor wafer surface.
8. A composition according to claim 5 wherein said submicron abrasive particles are silica.
9. A composition according to claim 5 wherein said amino alcohol is from the group consisting of 2-amino-2methyl-l-propanol, 2-dimethylamino-2-methyl-l- propanol, and tris(hydroxymethyl)aminomethane.
10. A composition according to claim 9 wherein said amino alcohol is tris(hydroxymethyl)aminomethane.
11. A composition according to claim 5 wherein the pH is adjusted to within 9 to
12.
12. A method for polishing a semiconductor wafer having an insulating layer or barrier layer wherein the surface of said workpiece is exposed to a polishing composition comprising: water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component which interacts with the surface being polished.
13. A method according to claim 11 wherein said chemically interactive component is from the group consisting of potassium hydroxide and ammonium hydroxide.
14. A method according to claim 11 also comprising an organic polymer having a degree of polymerization of at least five, said polymer having a plurality of moieties with affinity to surface groups on said semiconductor wafer surface.
15. A method according to claim 11 wherein said submicron abrasive particles are silica.
16. A method according to claim 11 wherein said amino alcohol is from the group consisting of 2-amino-2methyl- 1 -propanol, 2-dimethylamino-2-methyl- 1 - propanol, and tris(hydroxymethyl)aminomethane.
17. A method according to claim 15 wherein said amino alcohol is tris(hydroxymethyl)aminomethane.
18. A method according to claim 11 wherein the pH of said composition is adjusted to within 9 to 12.
PCT/US1999/030154 1998-12-17 1999-12-17 Compositions and methods for polishing semiconductor wafers WO2000036037A1 (en)

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US11260198P 1998-12-17 1998-12-17
US60/112,601 1998-12-17

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WO2002061008A2 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
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US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US6916742B2 (en) 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7022608B2 (en) 2000-12-01 2006-04-04 Applied Materials Inc. Method and composition for the removal of residual materials during substrate planarization
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US7199056B2 (en) 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
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