WO2001078116A3 - System for the preferential removal of silicon oxide - Google Patents
System for the preferential removal of silicon oxide Download PDFInfo
- Publication number
- WO2001078116A3 WO2001078116A3 PCT/US2001/011604 US0111604W WO0178116A3 WO 2001078116 A3 WO2001078116 A3 WO 2001078116A3 US 0111604 W US0111604 W US 0111604W WO 0178116 A3 WO0178116 A3 WO 0178116A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon oxide
- polishing
- preferential removal
- planarizing
- composition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001575472A JP2003530713A (en) | 2000-04-11 | 2001-04-09 | Priority removal system for silicon oxide |
AU2001253308A AU2001253308A1 (en) | 2000-04-11 | 2001-04-09 | System for the preferential removal of silicon oxide |
IL15197701A IL151977A0 (en) | 2000-04-11 | 2001-04-09 | System for the preferential removal of silicon oxide |
KR1020027013601A KR20020086949A (en) | 2000-04-11 | 2001-04-09 | System for the Preferential Removal of Silicon Oxide |
EP01926798A EP1272580A2 (en) | 2000-04-11 | 2001-04-09 | System for the preferential removal of silicon oxide |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54742500A | 2000-04-11 | 2000-04-11 | |
US09/547,425 | 2000-04-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001078116A2 WO2001078116A2 (en) | 2001-10-18 |
WO2001078116A3 true WO2001078116A3 (en) | 2002-02-21 |
Family
ID=24184595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/011604 WO2001078116A2 (en) | 2000-04-11 | 2001-04-09 | System for the preferential removal of silicon oxide |
Country Status (8)
Country | Link |
---|---|
US (2) | US7238618B2 (en) |
EP (1) | EP1272580A2 (en) |
JP (1) | JP2003530713A (en) |
KR (1) | KR20020086949A (en) |
CN (1) | CN1422314A (en) |
AU (1) | AU2001253308A1 (en) |
IL (1) | IL151977A0 (en) |
WO (1) | WO2001078116A2 (en) |
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KR100444308B1 (en) * | 2001-12-29 | 2004-08-16 | 주식회사 하이닉스반도체 | Formation Method of Semiconductor Device |
KR100474537B1 (en) * | 2002-07-16 | 2005-03-10 | 주식회사 하이닉스반도체 | The CMP Slurry Composition for Oxide and Method of Forming Semiconductor Device Using the Same |
US7005382B2 (en) | 2002-10-31 | 2006-02-28 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
JPWO2005037968A1 (en) * | 2003-10-16 | 2006-12-28 | 三菱電機株式会社 | Slurry for cutting silicon ingot and method for cutting silicon ingot using the same |
US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
JP4974447B2 (en) * | 2003-11-26 | 2012-07-11 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method |
US20050279733A1 (en) * | 2004-06-18 | 2005-12-22 | Cabot Microelectronics Corporation | CMP composition for improved oxide removal rate |
DE102005039896A1 (en) * | 2004-08-24 | 2006-03-02 | Disco Corporation | polishing liquid |
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US7449124B2 (en) * | 2005-02-25 | 2008-11-11 | 3M Innovative Properties Company | Method of polishing a wafer |
JP5133874B2 (en) * | 2005-04-28 | 2013-01-30 | テクノ セミケム シーオー., エルティーディー. | Chemical mechanical polishing composition with automatic polishing stop function for planarization of high step oxide film |
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ES2348361T3 (en) * | 2005-10-25 | 2010-12-03 | Atotech Deutschland Gmbh | METHOD FOR IMPROVED ADHESION OF POLYMER MATERIALS TO COPPER SURFACES OR COPPER ALLOYS. |
KR100786948B1 (en) | 2005-12-08 | 2007-12-17 | 주식회사 엘지화학 | Adjuvant capable of controlling a polishing selectivity and chemical mechanical polishing slurry comprising the same |
US7510974B2 (en) * | 2006-05-05 | 2009-03-31 | United Microelectronics Corp. | CMP process |
JP2008021704A (en) * | 2006-07-11 | 2008-01-31 | Nec Electronics Corp | Method of manufacturing semiconductor device |
SG175559A1 (en) * | 2006-09-25 | 2011-11-28 | Advanced Tech Materials | Compositions and methods for the removal of photoresist for a wafer rework application |
US8591764B2 (en) * | 2006-12-20 | 2013-11-26 | 3M Innovative Properties Company | Chemical mechanical planarization composition, system, and method of use |
US8017861B2 (en) * | 2007-09-18 | 2011-09-13 | Solopower, Inc. | Substrate preparation for thin film solar cell manufacturing |
CN101451049A (en) * | 2007-11-30 | 2009-06-10 | 安集微电子(上海)有限公司 | Chemico-mechanical polishing liquid |
DE102007058829A1 (en) * | 2007-12-06 | 2009-06-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Texture and cleaning medium for surface treatment of wafers and their use |
US8119529B2 (en) * | 2009-04-29 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing a substrate |
WO2011009587A1 (en) * | 2009-07-23 | 2011-01-27 | Meyer Burger Ag | Mechanically working and cutting silicon in an alkaline milieu |
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CN101857774B (en) * | 2010-06-01 | 2013-12-25 | 上海新安纳电子科技有限公司 | Polishing composition for improving chemical-mechanical polishing rate of silicon substrate and application thereof |
JP5701736B2 (en) | 2011-12-20 | 2015-04-15 | 株式会社東芝 | Flattening method and flattening apparatus |
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US11869774B2 (en) * | 2020-09-25 | 2024-01-09 | Changxin Memory Technologies, Inc. | Method for improving etching rate of wet etching |
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-
2001
- 2001-04-09 AU AU2001253308A patent/AU2001253308A1/en not_active Abandoned
- 2001-04-09 JP JP2001575472A patent/JP2003530713A/en active Pending
- 2001-04-09 KR KR1020027013601A patent/KR20020086949A/en not_active Application Discontinuation
- 2001-04-09 WO PCT/US2001/011604 patent/WO2001078116A2/en not_active Application Discontinuation
- 2001-04-09 CN CN01807885A patent/CN1422314A/en active Pending
- 2001-04-09 IL IL15197701A patent/IL151977A0/en unknown
- 2001-04-09 EP EP01926798A patent/EP1272580A2/en not_active Withdrawn
-
2003
- 2003-09-11 US US10/660,687 patent/US7238618B2/en not_active Expired - Fee Related
-
2007
- 2007-01-05 US US11/620,517 patent/US7365013B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5938505A (en) * | 1997-01-10 | 1999-08-17 | Texas Instruments Incorporated | High selectivity oxide to nitride slurry |
WO2000000560A2 (en) * | 1998-06-26 | 2000-01-06 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
Also Published As
Publication number | Publication date |
---|---|
AU2001253308A1 (en) | 2001-10-23 |
IL151977A0 (en) | 2003-04-10 |
WO2001078116A2 (en) | 2001-10-18 |
CN1422314A (en) | 2003-06-04 |
US7365013B2 (en) | 2008-04-29 |
US7238618B2 (en) | 2007-07-03 |
KR20020086949A (en) | 2002-11-20 |
EP1272580A2 (en) | 2003-01-08 |
US20050072524A1 (en) | 2005-04-07 |
US20070120090A1 (en) | 2007-05-31 |
JP2003530713A (en) | 2003-10-14 |
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