WO2001078116A3 - System for the preferential removal of silicon oxide - Google Patents

System for the preferential removal of silicon oxide Download PDF

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Publication number
WO2001078116A3
WO2001078116A3 PCT/US2001/011604 US0111604W WO0178116A3 WO 2001078116 A3 WO2001078116 A3 WO 2001078116A3 US 0111604 W US0111604 W US 0111604W WO 0178116 A3 WO0178116 A3 WO 0178116A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon oxide
polishing
preferential removal
planarizing
composition
Prior art date
Application number
PCT/US2001/011604
Other languages
French (fr)
Other versions
WO2001078116A2 (en
Inventor
Brian L Mueller
Jeffrey P Chamberlain
David J Schroeder
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Priority to JP2001575472A priority Critical patent/JP2003530713A/en
Priority to AU2001253308A priority patent/AU2001253308A1/en
Priority to IL15197701A priority patent/IL151977A0/en
Priority to KR1020027013601A priority patent/KR20020086949A/en
Priority to EP01926798A priority patent/EP1272580A2/en
Publication of WO2001078116A2 publication Critical patent/WO2001078116A2/en
Publication of WO2001078116A3 publication Critical patent/WO2001078116A3/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245Pads with fixed abrasives

Abstract

A system, a composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt.% or more of fluoride ions, (b) about 1 wt.% or more of an amine, (c) about 0.1 wt.% or more of a base, and (d) water, and (ii) and abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt.% or more of fluoride ions, (b) about 1 wt.% or more of an amine, (c) about 0.1 wt.% or more of a base, and (d) water, and (ii) an abrasive.
PCT/US2001/011604 2000-04-11 2001-04-09 System for the preferential removal of silicon oxide WO2001078116A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001575472A JP2003530713A (en) 2000-04-11 2001-04-09 Priority removal system for silicon oxide
AU2001253308A AU2001253308A1 (en) 2000-04-11 2001-04-09 System for the preferential removal of silicon oxide
IL15197701A IL151977A0 (en) 2000-04-11 2001-04-09 System for the preferential removal of silicon oxide
KR1020027013601A KR20020086949A (en) 2000-04-11 2001-04-09 System for the Preferential Removal of Silicon Oxide
EP01926798A EP1272580A2 (en) 2000-04-11 2001-04-09 System for the preferential removal of silicon oxide

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54742500A 2000-04-11 2000-04-11
US09/547,425 2000-04-11

Publications (2)

Publication Number Publication Date
WO2001078116A2 WO2001078116A2 (en) 2001-10-18
WO2001078116A3 true WO2001078116A3 (en) 2002-02-21

Family

ID=24184595

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/011604 WO2001078116A2 (en) 2000-04-11 2001-04-09 System for the preferential removal of silicon oxide

Country Status (8)

Country Link
US (2) US7238618B2 (en)
EP (1) EP1272580A2 (en)
JP (1) JP2003530713A (en)
KR (1) KR20020086949A (en)
CN (1) CN1422314A (en)
AU (1) AU2001253308A1 (en)
IL (1) IL151977A0 (en)
WO (1) WO2001078116A2 (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350692B1 (en) * 2000-12-14 2002-02-26 Infineon Technologies Ag Increased polish removal rate of dielectric layers using fixed abrasive pads
DE10063491A1 (en) * 2000-12-20 2002-06-27 Bayer Ag Sour polishing slurry for chemical mechanical polishing of SiO¶2¶ insulation layers
US6612911B2 (en) 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
JP2002288821A (en) * 2001-03-27 2002-10-04 Showa Denko Kk Composition for texturing processing
WO2002076902A1 (en) * 2001-03-27 2002-10-03 Showa Denko K.K. Composition for texturing process
KR100444308B1 (en) * 2001-12-29 2004-08-16 주식회사 하이닉스반도체 Formation Method of Semiconductor Device
KR100474537B1 (en) * 2002-07-16 2005-03-10 주식회사 하이닉스반도체 The CMP Slurry Composition for Oxide and Method of Forming Semiconductor Device Using the Same
US7005382B2 (en) 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JPWO2005037968A1 (en) * 2003-10-16 2006-12-28 三菱電機株式会社 Slurry for cutting silicon ingot and method for cutting silicon ingot using the same
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
JP4974447B2 (en) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド Polishing composition and polishing method
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
DE102005039896A1 (en) * 2004-08-24 2006-03-02 Disco Corporation polishing liquid
KR100679257B1 (en) * 2004-11-26 2007-02-05 삼성전자주식회사 Method for manufacturing trench type capacitor
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
JP5133874B2 (en) * 2005-04-28 2013-01-30 テクノ セミケム シーオー., エルティーディー. Chemical mechanical polishing composition with automatic polishing stop function for planarization of high step oxide film
WO2006120736A1 (en) * 2005-05-11 2006-11-16 Mitsubishi Denki Kabushiki Kaisha Method for producing silicon block and silicon wafer
ES2348361T3 (en) * 2005-10-25 2010-12-03 Atotech Deutschland Gmbh METHOD FOR IMPROVED ADHESION OF POLYMER MATERIALS TO COPPER SURFACES OR COPPER ALLOYS.
KR100786948B1 (en) 2005-12-08 2007-12-17 주식회사 엘지화학 Adjuvant capable of controlling a polishing selectivity and chemical mechanical polishing slurry comprising the same
US7510974B2 (en) * 2006-05-05 2009-03-31 United Microelectronics Corp. CMP process
JP2008021704A (en) * 2006-07-11 2008-01-31 Nec Electronics Corp Method of manufacturing semiconductor device
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
US8591764B2 (en) * 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
US8017861B2 (en) * 2007-09-18 2011-09-13 Solopower, Inc. Substrate preparation for thin film solar cell manufacturing
CN101451049A (en) * 2007-11-30 2009-06-10 安集微电子(上海)有限公司 Chemico-mechanical polishing liquid
DE102007058829A1 (en) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Texture and cleaning medium for surface treatment of wafers and their use
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
WO2011009587A1 (en) * 2009-07-23 2011-01-27 Meyer Burger Ag Mechanically working and cutting silicon in an alkaline milieu
CN102713557B (en) 2009-11-03 2015-04-15 7685297加拿大有限公司 Systems and methods for preparing samples for chemical analysis
CN101857774B (en) * 2010-06-01 2013-12-25 上海新安纳电子科技有限公司 Polishing composition for improving chemical-mechanical polishing rate of silicon substrate and application thereof
JP5701736B2 (en) 2011-12-20 2015-04-15 株式会社東芝 Flattening method and flattening apparatus
KR102447589B1 (en) * 2017-10-25 2022-09-28 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. Composition for material removal process and method of composition thereof
CN110629225B (en) * 2018-06-25 2021-11-12 比亚迪股份有限公司 Aluminum alloy alkaline chemical polishing solution, preparation method and polishing method
US11869774B2 (en) * 2020-09-25 2024-01-09 Changxin Memory Technologies, Inc. Method for improving etching rate of wet etching
CN114621685A (en) * 2020-12-11 2022-06-14 安集微电子(上海)有限公司 Chemical mechanical polishing solution and use method thereof
US11472984B1 (en) * 2021-09-27 2022-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of enhancing the removal rate of polysilicon

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5938505A (en) * 1997-01-10 1999-08-17 Texas Instruments Incorporated High selectivity oxide to nitride slurry
WO2000000560A2 (en) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385682A (en) 1965-04-29 1968-05-28 Sprague Electric Co Method and reagent for surface polishing
US3328141A (en) 1966-02-28 1967-06-27 Tizon Chemical Corp Process for polishing crystalline silicon
US3429080A (en) 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
US3615955A (en) 1969-02-28 1971-10-26 Ibm Method for polishing a silicon surface
US3887403A (en) 1972-07-05 1975-06-03 Mc Donnell Douglas Corp Process and solution for removing titanium and refractory metals and their alloys from tools
US3930870A (en) 1973-12-28 1976-01-06 International Business Machines Corporation Silicon polishing solution preparation
US4169337A (en) 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4343116A (en) 1979-07-26 1982-08-10 Pilkington Brothers Limited Processes for finishing glass surfaces
DE2949383C2 (en) 1979-12-07 1982-01-21 Sälzle, Erich, Dr., 8000 München Process for sulfuric acid-hydrofluoric acid polishing of glass objects
US4462188A (en) 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
ES525932A0 (en) 1982-10-13 1984-11-16 Saelzle Erich METHOD OF POLISHING GLASS ITEMS
US4671851A (en) 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
EP0322721B1 (en) 1987-12-29 1993-10-06 E.I. Du Pont De Nemours And Company Fine polishing composition for wafers
JPH01193166A (en) 1988-01-28 1989-08-03 Showa Denko Kk Pad for specularly grinding semiconductor wafer
JP2714411B2 (en) 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー Composition for fine polishing of wafers
US5246624A (en) 1989-03-21 1993-09-21 Cabot Corporation Aqueous colloidal dispersion of fumed silica, acid and stabilizer
JP3123061B2 (en) 1990-06-13 2001-01-09 ソニー株式会社 Buried flattening method by bias ECR-CVD method
US5139571A (en) 1991-04-24 1992-08-18 Motorola, Inc. Non-contaminating wafer polishing slurry
US5169491A (en) 1991-07-29 1992-12-08 Micron Technology, Inc. Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques
US5176752A (en) 1991-07-31 1993-01-05 W. R. Grace & Co.-Conn. Stabilized microsilica slurries and cement compositions containing the same
JP2734839B2 (en) 1991-10-09 1998-04-02 シャープ株式会社 Etching solution for aluminum, etching method and aluminum etching product
EP0545263B1 (en) 1991-11-29 2002-06-19 Sony Corporation Method of forming trench isolation having polishing step and method of manufacturing semiconductor device
US5407526A (en) 1993-06-30 1995-04-18 Intel Corporation Chemical mechanical polishing slurry delivery and mixing system
US5720823A (en) 1993-07-09 1998-02-24 Henkel Corporation Composition and process for desmutting and deoxidizing without smutting
US5494857A (en) 1993-07-28 1996-02-27 Digital Equipment Corporation Chemical mechanical planarization of shallow trenches in semiconductor substrates
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5478436A (en) 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
US5860848A (en) 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
US5614444A (en) 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5690807A (en) 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
US5700383A (en) 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5769689A (en) 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
US5993686A (en) 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US5769691A (en) 1996-06-14 1998-06-23 Speedfam Corp Methods and apparatus for the chemical mechanical planarization of electronic devices
US5863838A (en) 1996-07-22 1999-01-26 Motorola, Inc. Method for chemically-mechanically polishing a metal layer
US5962343A (en) * 1996-07-30 1999-10-05 Nissan Chemical Industries, Ltd. Process for producing crystalline ceric oxide particles and abrasive
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5855811A (en) 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
DE69830676D1 (en) 1997-01-10 2005-08-04 Texas Instruments Inc CMP suspension with high selectivity
EP0853335A3 (en) 1997-01-10 1999-01-07 Texas Instruments Incorporated Slurry and process for the mechano-chemical polishing of semiconductor devices
US5721173A (en) 1997-02-25 1998-02-24 Kabushiki Kaisha Toshiba Method of forming a shallow trench isolation structure
JPH10319875A (en) 1997-05-20 1998-12-04 Sony Corp Manufacture of plasma address display device
US6121143A (en) 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
DE69840889D1 (en) 1997-12-23 2009-07-23 Texas Instruments Inc Chemical-mechanical polishing for the planarization of insulating dielectrics
US6019806A (en) 1998-01-08 2000-02-01 Sees; Jennifer A. High selectivity slurry for shallow trench isolation processing
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
WO1999062628A1 (en) 1998-06-04 1999-12-09 Angus Chemical Company Stabilization of silica dispersions
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6291349B1 (en) 1999-03-25 2001-09-18 Beaver Creek Concepts Inc Abrasive finishing with partial organic boundary layer
US6267644B1 (en) 1998-11-06 2001-07-31 Beaver Creek Concepts Inc Fixed abrasive finishing element having aids finishing method
US6046112A (en) 1998-12-14 2000-04-04 Taiwan Semiconductor Manufacturing Company Chemical mechanical polishing slurry
US6471735B1 (en) * 1999-08-17 2002-10-29 Air Liquide America Corporation Compositions for use in a chemical-mechanical planarization process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5938505A (en) * 1997-01-10 1999-08-17 Texas Instruments Incorporated High selectivity oxide to nitride slurry
WO2000000560A2 (en) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same

Also Published As

Publication number Publication date
AU2001253308A1 (en) 2001-10-23
IL151977A0 (en) 2003-04-10
WO2001078116A2 (en) 2001-10-18
CN1422314A (en) 2003-06-04
US7365013B2 (en) 2008-04-29
US7238618B2 (en) 2007-07-03
KR20020086949A (en) 2002-11-20
EP1272580A2 (en) 2003-01-08
US20050072524A1 (en) 2005-04-07
US20070120090A1 (en) 2007-05-31
JP2003530713A (en) 2003-10-14

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