WO2001095402A3 - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

Info

Publication number
WO2001095402A3
WO2001095402A3 PCT/JP2001/004725 JP0104725W WO0195402A3 WO 2001095402 A3 WO2001095402 A3 WO 2001095402A3 JP 0104725 W JP0104725 W JP 0104725W WO 0195402 A3 WO0195402 A3 WO 0195402A3
Authority
WO
WIPO (PCT)
Prior art keywords
powder
emitting device
semiconductor light
light
range
Prior art date
Application number
PCT/JP2001/004725
Other languages
French (fr)
Other versions
WO2001095402A2 (en
Inventor
Takayuki Kamemura
Kazuhiro Mitani
Teruyuki Kobayashi
Nobuo Uotani
Kasumi Nakamura
Yuji Itoh
Original Assignee
Showa Denko Kk
Takayuki Kamemura
Kazuhiro Mitani
Teruyuki Kobayashi
Nobuo Uotani
Kasumi Nakamura
Yuji Itoh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001063785A external-priority patent/JP2002280601A/en
Application filed by Showa Denko Kk, Takayuki Kamemura, Kazuhiro Mitani, Teruyuki Kobayashi, Nobuo Uotani, Kasumi Nakamura, Yuji Itoh filed Critical Showa Denko Kk
Priority to US10/048,854 priority Critical patent/US6952025B2/en
Priority to AU60715/01A priority patent/AU6071501A/en
Publication of WO2001095402A2 publication Critical patent/WO2001095402A2/en
Publication of WO2001095402A3 publication Critical patent/WO2001095402A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Abstract

A small-sized semiconductor light-emitting device of high emission directivity and high output is provided. A portion of a light extraction section of a semiconductor light-emitting device including a pn-junction portion is covered with a light-shielding substance of low conductivity. The electrical resistance of the light-shielding substance is 106 Φm or higher, and the substance contains powder of at least one species selected from metals and pigments. The powder of metal contains at least one species selected from among Al, Cu, Ag, Au, Pt, Ti, Ni, Sn, Pb, Mg, Zn, Fe, Co, and Cr. The powder is a plate-like powder having a thickness falling within a range of 0.001-10 νm and a length falling within a range of 0.01-100 νm.
PCT/JP2001/004725 2000-06-08 2001-06-05 Semiconductor light-emitting device WO2001095402A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/048,854 US6952025B2 (en) 2000-06-08 2001-06-05 Semiconductor light-emitting device
AU60715/01A AU6071501A (en) 2000-06-08 2001-06-05 Semiconductor light-emitting device

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP2000-172489 2000-06-08
JP2000172489 2000-06-08
US21710500P 2000-07-10 2000-07-10
US60/217,105 2000-07-10
JP2001-006703 2001-01-15
JP2001006703 2001-01-15
US26324101P 2001-01-23 2001-01-23
US60/263,241 2001-01-23
US26742301P 2001-02-09 2001-02-09
US60/267,423 2001-02-09
JP2001063785A JP2002280601A (en) 2000-06-08 2001-03-07 Semiconductor light emitting element
JP2001-063785 2001-03-07

Publications (2)

Publication Number Publication Date
WO2001095402A2 WO2001095402A2 (en) 2001-12-13
WO2001095402A3 true WO2001095402A3 (en) 2002-06-20

Family

ID=27554795

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/004725 WO2001095402A2 (en) 2000-06-08 2001-06-05 Semiconductor light-emitting device

Country Status (3)

Country Link
US (1) US6952025B2 (en)
AU (1) AU6071501A (en)
WO (1) WO2001095402A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030092246A1 (en) * 2001-10-11 2003-05-15 Wanat Stanley F. Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
DE10234977A1 (en) * 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Radiation-emitting thin layer semiconductor component comprises a multiple layer structure based on gallium nitride containing an active radiation-producing layer and having a first main surface and a second main surface
WO2005041313A1 (en) * 2003-09-26 2005-05-06 Osram Opto Semiconductors Gmbh Radiation-emitting thin-film semiconductor chip
KR100622824B1 (en) 2004-05-18 2006-09-14 엘지전자 주식회사 Package of light emitting diode and method of packaging the same
CN100386896C (en) * 2005-02-08 2008-05-07 晶元光电股份有限公司 LED and production thereof
US7759690B2 (en) * 2005-07-04 2010-07-20 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device
KR20070093271A (en) * 2006-03-13 2007-09-18 엘지이노텍 주식회사 Nitride semiconductor light-emitting device and manufacturing method thereof
US20080029774A1 (en) * 2006-08-04 2008-02-07 Acol Technologies S.A. Semiconductor light source packages with broadband and angular uniformity support
US20080280146A1 (en) * 2007-05-11 2008-11-13 Atomic Energy Council - Institute Of Nuclear Energy Research Pre-cut wafer structure with heat stress effect suppressed
KR100850780B1 (en) * 2007-05-22 2008-08-06 삼성전기주식회사 Method for forming the nitride semiconductor light emitting device
US9268091B2 (en) * 2010-02-18 2016-02-23 Corning Cable Systems Llc Methods for laser processing arrayed optical fibers along with splicing connectors
KR101735670B1 (en) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 A light emitting device
US8436386B2 (en) * 2011-06-03 2013-05-07 Micron Technology, Inc. Solid state lighting devices having side reflectivity and associated methods of manufacture
JP5751260B2 (en) * 2012-01-17 2015-07-22 大日本印刷株式会社 Electron beam curable resin composition, resin frame for reflector, reflector, semiconductor light emitting device, and method for producing molded article
JP6135213B2 (en) 2012-04-18 2017-05-31 日亜化学工業株式会社 Semiconductor light emitting device
JP2014187325A (en) * 2013-03-25 2014-10-02 Toshiba Corp Semiconductor light-emitting device and method of manufacturing the same
JP6454846B2 (en) 2013-12-24 2019-01-23 国立大学法人 東京大学 Light emitting element, reference light source, and light emitter observation method
DE102015107479A1 (en) * 2015-05-12 2016-11-17 Bundesrepublik Deutschland, Vertreten Durch Den Bundesminister Für Wirtschaft Und Energie, Dieser Vertreten Durch Den Präsidenten Der Bundesanstalt Für Materialforschung Und -Prüfung (Bam) High voltage harness and method of making a high voltage harness

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2273438A1 (en) * 1974-05-29 1975-12-26 Radiotechnique Compelec Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation
EP0404565A1 (en) * 1989-06-21 1990-12-27 Mitsubishi Kasei Corporation Compound semiconductor device and method of surface treatment of such a device
US5137844A (en) * 1991-04-05 1992-08-11 Polaroid Corporation Process to adjust output of light emitters
US5192985A (en) * 1991-01-16 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor light-emitting element with light-shielding film
US5686980A (en) * 1995-04-03 1997-11-11 Kabushiki Kaisha Toshiba Light-shielding film, useable in an LCD, in which fine particles of a metal or semi-metal are dispersed in and throughout an inorganic insulating film
DE19757850A1 (en) * 1996-12-27 1998-07-02 Sharp Kk Light emitting display element e.g. LED chip

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode
JP2878039B2 (en) * 1992-07-29 1999-04-05 東京応化工業株式会社 Photosensitive resin composition
DE69416363T2 (en) * 1993-03-23 1999-09-23 Tdk Corp IMAGING SOLID COMPONENT AND MANUFACTURING METHOD THEREFOR
JP3068393B2 (en) * 1993-05-13 2000-07-24 日本電気株式会社 Light-resistant polyaniline light-shielding film and liquid crystal display device using the same
JP2924580B2 (en) 1993-07-19 1999-07-26 日立電線株式会社 Resin mold type compound semiconductor optical device and resin mold type light emitting diode
US5691101A (en) * 1994-03-15 1997-11-25 Kabushiki Kaisha Toshiba Photosensitive composition
JPH08167733A (en) 1994-12-14 1996-06-25 Toshiba Corp Semiconductor light emitting element
US5869929A (en) * 1997-02-04 1999-02-09 Idemitsu Kosan Co., Ltd. Multicolor luminescent device
TW505805B (en) * 1998-03-19 2002-10-11 Matsushita Electric Ind Co Ltd Liquid crystal display device and producing method thereof
US6376057B1 (en) * 1998-11-19 2002-04-23 Fuji Photo Film, Co., Ltd. Packaging material for photographic photosensitive material
US6407411B1 (en) * 2000-04-13 2002-06-18 General Electric Company Led lead frame assembly
KR100877708B1 (en) * 2001-03-29 2009-01-07 다이니폰 인사츠 가부시키가이샤 Method of producing pattern-formed structure and photomask used in the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2273438A1 (en) * 1974-05-29 1975-12-26 Radiotechnique Compelec Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation
EP0404565A1 (en) * 1989-06-21 1990-12-27 Mitsubishi Kasei Corporation Compound semiconductor device and method of surface treatment of such a device
US5192985A (en) * 1991-01-16 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor light-emitting element with light-shielding film
US5137844A (en) * 1991-04-05 1992-08-11 Polaroid Corporation Process to adjust output of light emitters
US5686980A (en) * 1995-04-03 1997-11-11 Kabushiki Kaisha Toshiba Light-shielding film, useable in an LCD, in which fine particles of a metal or semi-metal are dispersed in and throughout an inorganic insulating film
DE19757850A1 (en) * 1996-12-27 1998-07-02 Sharp Kk Light emitting display element e.g. LED chip

Also Published As

Publication number Publication date
US6952025B2 (en) 2005-10-04
WO2001095402A2 (en) 2001-12-13
AU6071501A (en) 2001-12-17
US20020134986A1 (en) 2002-09-26

Similar Documents

Publication Publication Date Title
WO2001095402A3 (en) Semiconductor light-emitting device
EP1371749A4 (en) Sputtering target material
AU2003265220A8 (en) Copper and/or zinc alloy nanopowders made by laser vaporization and condensation
CA2244122A1 (en) Combination of materials for the low temperature triggering of the activation of getter materials and getter devices containing the same
EP1332727A3 (en) Orthodontic appliance
ATE95281T1 (en) FUEL HANDLING DEVICE.
CA2051556A1 (en) Gas sensor
CA2466781A1 (en) Antimicrobial, sporicidal composition and treated products thereof
EP0798778A3 (en) Method of manufacturing a semiconductor device of multilayer wire structure
DE60136960D1 (en) INTERMETALLIC SUPERCONDUCTIVE COMPOUND AND ALLOYED SUPRELITERS AND THEIR MANUFACTURING METHOD.
EP0860679A3 (en) Shaped charge
EP1686619A3 (en) Solid-state imaging device and method of manufacturing the same
CA2162613A1 (en) Friction bearing alloy
ZA200106589B (en) A combined insect repellent and sunscreen composition.
CA2282547A1 (en) Thermo-electric conversion element
EP0794573A3 (en) Semiconductor device and method of manufacturing the same
AU1638595A (en) Lubricating compositions with improved oxidation resistance containing a dispersant and an antioxidant
CA2341110A1 (en) Avalanche photodiode
EP1172867A3 (en) Method for producing P-Type Gallium Nitride-Based compound semiconductor, method for producing Gallium Nitride-Based compound semiconductor light-emitting device, and gallium nitride-based compound semiconductor light-emitting device
JPS56102536A (en) Composite electrical contact material
ATE221311T1 (en) MOLLUSCICIDES
JPS57181340A (en) Electrical contact material of selectively and internally oxidized silver-tin alloy containing bismuth
Weigmann Heavy metal burdens in forest soil fauna at polluted sites near Berlin
AU2002255549A8 (en) 23565, a novel human zinc carboxypeptidase family member and uses thereof
EP1024300A3 (en) Sensor mounting arrangement

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 10048854

Country of ref document: US

AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase