WO2002041369A3 - Electropolishing and chemical mechanical planarization - Google Patents

Electropolishing and chemical mechanical planarization Download PDF

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Publication number
WO2002041369A3
WO2002041369A3 PCT/US2001/043368 US0143368W WO0241369A3 WO 2002041369 A3 WO2002041369 A3 WO 2002041369A3 US 0143368 W US0143368 W US 0143368W WO 0241369 A3 WO0241369 A3 WO 0241369A3
Authority
WO
WIPO (PCT)
Prior art keywords
electropolishing
chemical mechanical
mechanical planarization
substrate
electrolyte
Prior art date
Application number
PCT/US2001/043368
Other languages
French (fr)
Other versions
WO2002041369A2 (en
Inventor
Gautam Banerjee
Lee Melbourne Cook
Original Assignee
Rodel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rodel Inc filed Critical Rodel Inc
Publication of WO2002041369A2 publication Critical patent/WO2002041369A2/en
Publication of WO2002041369A3 publication Critical patent/WO2002041369A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Abstract

Removing metal from a semiconductor substrate by dissolving ions of the metal into an electrolyte, comprising the steps of: applying a voltage across a polishing pad and the substrate, while an electropolishing electrolyte is dispensed at an interface of the substrate and the polishing pad, and while pooling the electrolyte about the substrate by the polishing pad.
PCT/US2001/043368 2000-11-20 2001-11-20 Electropolishing and chemical mechanical planarization WO2002041369A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24999500P 2000-11-20 2000-11-20
US60/249,995 2000-11-20

Publications (2)

Publication Number Publication Date
WO2002041369A2 WO2002041369A2 (en) 2002-05-23
WO2002041369A3 true WO2002041369A3 (en) 2004-01-08

Family

ID=22945867

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/043368 WO2002041369A2 (en) 2000-11-20 2001-11-20 Electropolishing and chemical mechanical planarization

Country Status (2)

Country Link
US (1) US20020104764A1 (en)
WO (1) WO2002041369A2 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7078308B2 (en) * 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7074113B1 (en) * 2000-08-30 2006-07-11 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7112121B2 (en) * 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7160176B2 (en) * 2000-08-30 2007-01-09 Micron Technology, Inc. Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US7094131B2 (en) * 2000-08-30 2006-08-22 Micron Technology, Inc. Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7153410B2 (en) * 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces
US7134934B2 (en) * 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US7153195B2 (en) * 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US20070290166A1 (en) * 2001-03-14 2007-12-20 Liu Feng Q Method and composition for polishing a substrate
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US20040235297A1 (en) * 2003-05-23 2004-11-25 Bih-Tiao Lin Reverse electroplating for damascene conductive region formation
US6848977B1 (en) 2003-08-29 2005-02-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad for electrochemical mechanical polishing
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7566391B2 (en) 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US7998335B2 (en) 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
CN115179187A (en) * 2021-04-06 2022-10-14 广州集成电路技术研究院有限公司 Wafer protection circuit and chemical mechanical planarization apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140598A (en) * 1976-06-03 1979-02-20 Hitachi Shipbuilding & Engineering Co., Ltd. Mirror finishing
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
WO2000026443A2 (en) * 1998-11-03 2000-05-11 Nutool, Inc. Method and apparatus for electrochemical mechanical deposition
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
WO2000059682A1 (en) * 1999-04-03 2000-10-12 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
EP1104013A2 (en) * 1999-11-29 2001-05-30 Applied Materials, Inc. Advanced electrolytic polish assisted metal wafer planarization

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140598A (en) * 1976-06-03 1979-02-20 Hitachi Shipbuilding & Engineering Co., Ltd. Mirror finishing
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
WO2000026443A2 (en) * 1998-11-03 2000-05-11 Nutool, Inc. Method and apparatus for electrochemical mechanical deposition
WO2000059682A1 (en) * 1999-04-03 2000-10-12 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
EP1104013A2 (en) * 1999-11-29 2001-05-30 Applied Materials, Inc. Advanced electrolytic polish assisted metal wafer planarization

Also Published As

Publication number Publication date
US20020104764A1 (en) 2002-08-08
WO2002041369A2 (en) 2002-05-23

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