WO2002047116A8 - Structure and method for forming a body contact for vertical transistor cells - Google Patents

Structure and method for forming a body contact for vertical transistor cells

Info

Publication number
WO2002047116A8
WO2002047116A8 PCT/US2001/044624 US0144624W WO0247116A8 WO 2002047116 A8 WO2002047116 A8 WO 2002047116A8 US 0144624 W US0144624 W US 0144624W WO 0247116 A8 WO0247116 A8 WO 0247116A8
Authority
WO
WIPO (PCT)
Prior art keywords
forming
body contact
vertical transistor
transistor cells
cells
Prior art date
Application number
PCT/US2001/044624
Other languages
French (fr)
Other versions
WO2002047116A2 (en
Inventor
Ulrike Gruening
Helmut Klose
Wolfgang Bergner
Original Assignee
Infineon Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Corp filed Critical Infineon Technologies Corp
Priority to EP01987129A priority Critical patent/EP1396032A1/en
Publication of WO2002047116A2 publication Critical patent/WO2002047116A2/en
Publication of WO2002047116A8 publication Critical patent/WO2002047116A8/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
PCT/US2001/044624 2000-12-05 2001-11-28 Structure and method for forming a body contact for vertical transistor cells WO2002047116A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP01987129A EP1396032A1 (en) 2000-12-05 2001-11-28 Structure and method for forming a body contact for vertical transistor cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/730,150 US6593612B2 (en) 2000-12-05 2000-12-05 Structure and method for forming a body contact for vertical transistor cells
US09/730,150 2000-12-05

Publications (2)

Publication Number Publication Date
WO2002047116A2 WO2002047116A2 (en) 2002-06-13
WO2002047116A8 true WO2002047116A8 (en) 2003-12-04

Family

ID=24934147

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/044624 WO2002047116A2 (en) 2000-12-05 2001-11-28 Structure and method for forming a body contact for vertical transistor cells

Country Status (3)

Country Link
US (1) US6593612B2 (en)
EP (1) EP1396032A1 (en)
WO (1) WO2002047116A2 (en)

Families Citing this family (40)

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US6501117B1 (en) * 2001-11-05 2002-12-31 International Business Machines Corporation Static self-refreshing DRAM structure and operating mode
DE10255845B3 (en) * 2002-11-29 2004-07-15 Infineon Technologies Ag Production of a trench capacitor for a semiconductor memory cell comprises forming a trench in a substrate using a hard mask, forming a capacitor dielectric, insulating collar and conducting filler in trench regions, and further processing
US6750116B1 (en) * 2003-07-14 2004-06-15 Nanya Technology Corp. Method for fabricating asymmetric inner structure in contacts or trenches
TWI229940B (en) * 2004-01-30 2005-03-21 Nanya Technology Corp Memory cell with a vertical transistor and fabrication method thereof
US7439568B2 (en) * 2005-02-10 2008-10-21 International Business Machines Corporation Vertical body-contacted SOI transistor
US20070045698A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Semiconductor structures with body contacts and fabrication methods thereof
US20070045697A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
US7795661B2 (en) * 2006-03-07 2010-09-14 International Business Machines Corporation Vertical SOI transistor memory cell
TWI389302B (en) * 2008-01-02 2013-03-11 Nanya Technology Corp Trench-type semiconductor device structure
US7838928B2 (en) * 2008-06-06 2010-11-23 Qimonda Ag Word line to bit line spacing method and apparatus
US7989893B2 (en) * 2008-08-28 2011-08-02 International Business Machines Corporation SOI body contact using E-DRAM technology
US20100090348A1 (en) * 2008-10-10 2010-04-15 Inho Park Single-Sided Trench Contact Window
EP2397707B1 (en) * 2009-02-12 2015-08-26 Art Screw Co., Ltd. Fastener and fastening structure
KR101077445B1 (en) * 2009-05-28 2011-10-26 주식회사 하이닉스반도체 Semiconductor having vertical channel transistor and manufacturing method of the same
KR101164955B1 (en) * 2009-09-30 2012-07-12 에스케이하이닉스 주식회사 Semiconductor device with one side contact and method for manufacturing the same
KR101116354B1 (en) * 2009-09-30 2012-03-09 주식회사 하이닉스반도체 Semiconductor device with buried bitline interconnected one side contact and method for manufacturing the same
KR101060767B1 (en) 2009-10-21 2011-08-31 주식회사 하이닉스반도체 Junction Formation Method for Semiconductor Devices
KR101110545B1 (en) * 2009-11-10 2012-01-31 주식회사 하이닉스반도체 Semiconductor device and method for manufacturing the same
KR101043364B1 (en) 2009-11-12 2011-06-21 주식회사 하이닉스반도체 Method for manufacturing the semiconductor device
KR101194924B1 (en) * 2010-01-27 2012-10-25 에스케이하이닉스 주식회사 Vetical semiconductor device and Method of manufacturing the same
KR101129867B1 (en) 2010-02-01 2012-03-23 주식회사 하이닉스반도체 Method for manufacturig the semiconductor device
KR101152402B1 (en) 2010-05-20 2012-06-05 에스케이하이닉스 주식회사 Semiconductor device with buried bitline and method for manufacturing the same
KR101062889B1 (en) 2010-07-07 2011-09-07 주식회사 하이닉스반도체 Semiconductor device with side-junction and method for manufacturing the same
KR101133692B1 (en) 2010-07-07 2012-04-19 에스케이하이닉스 주식회사 Method for forming masking layer usig implant and method for manufacturing semiconductor device using the same
KR101129030B1 (en) 2010-07-09 2012-03-23 주식회사 하이닉스반도체 Method for forming etching barrier by using shadow effect and method for fabricating one side contact of vertical transistor
KR20120012593A (en) 2010-08-02 2012-02-10 주식회사 하이닉스반도체 Semiconductor device and method for manufacturing the same
US8361856B2 (en) 2010-11-01 2013-01-29 Micron Technology, Inc. Memory cells, arrays of memory cells, and methods of forming memory cells
US8329567B2 (en) 2010-11-03 2012-12-11 Micron Technology, Inc. Methods of forming doped regions in semiconductor substrates
KR101160036B1 (en) 2010-11-26 2012-06-26 에스케이하이닉스 주식회사 Method for forming semiconductor device
KR101213931B1 (en) 2010-12-14 2012-12-18 에스케이하이닉스 주식회사 Vertical type semiconductor and method of the same
US8450175B2 (en) 2011-02-22 2013-05-28 Micron Technology, Inc. Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith
US8569831B2 (en) 2011-05-27 2013-10-29 Micron Technology, Inc. Integrated circuit arrays and semiconductor constructions
US9610251B2 (en) 2011-11-01 2017-04-04 Resverlogix Corp. Pharmaceutical compositions for substituted quinazolinones
US9036391B2 (en) 2012-03-06 2015-05-19 Micron Technology, Inc. Arrays of vertically-oriented transistors, memory arrays including vertically-oriented transistors, and memory cells
US9006060B2 (en) 2012-08-21 2015-04-14 Micron Technology, Inc. N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors
US9129896B2 (en) 2012-08-21 2015-09-08 Micron Technology, Inc. Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors
US9478550B2 (en) 2012-08-27 2016-10-25 Micron Technology, Inc. Arrays of vertically-oriented transistors, and memory arrays including vertically-oriented transistors
US9111853B2 (en) 2013-03-15 2015-08-18 Micron Technology, Inc. Methods of forming doped elements of semiconductor device structures
US9773888B2 (en) 2014-02-26 2017-09-26 Micron Technology, Inc. Vertical access devices, semiconductor device structures, and related methods
US10770585B2 (en) 2018-09-24 2020-09-08 Globalfoundries Inc. Self-aligned buried contact for vertical field-effect transistor and method of production thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2619663C3 (en) 1976-05-04 1982-07-22 Siemens AG, 1000 Berlin und 8000 München Field effect transistor, method of its operation and use as a high-speed switch and in an integrated circuit
US4210926A (en) 1977-12-07 1980-07-01 Siemens Aktiengesellschaft Intermediate member for mounting and contacting a semiconductor body
JPH07130871A (en) * 1993-06-28 1995-05-19 Toshiba Corp Semiconductor memory device

Also Published As

Publication number Publication date
US6593612B2 (en) 2003-07-15
EP1396032A1 (en) 2004-03-10
US20020066925A1 (en) 2002-06-06
WO2002047116A2 (en) 2002-06-13

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