WO2002063733A3 - Halbleiter-laser mit vertikalem resonator - Google Patents

Halbleiter-laser mit vertikalem resonator Download PDF

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Publication number
WO2002063733A3
WO2002063733A3 PCT/DE2002/000471 DE0200471W WO02063733A3 WO 2002063733 A3 WO2002063733 A3 WO 2002063733A3 DE 0200471 W DE0200471 W DE 0200471W WO 02063733 A3 WO02063733 A3 WO 02063733A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
vertical resonator
regions
implantation regions
current shields
Prior art date
Application number
PCT/DE2002/000471
Other languages
English (en)
French (fr)
Other versions
WO2002063733A2 (de
Inventor
Juergen Mueller
Original Assignee
Osram Opto Semiconductors Gmbh
Juergen Mueller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Juergen Mueller filed Critical Osram Opto Semiconductors Gmbh
Priority to EP02714002A priority Critical patent/EP1374356A2/de
Priority to JP2002563573A priority patent/JP2004518304A/ja
Publication of WO2002063733A2 publication Critical patent/WO2002063733A2/de
Priority to US10/637,191 priority patent/US7177339B2/en
Publication of WO2002063733A3 publication Critical patent/WO2002063733A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H01S5/18333—Position of the structure with more than one structure only above the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Abstract

Ein Vcsel weist neben Stromblenden (6) im Randbereich einer Mesa (12) Implantationsgebiete auf, die als modenselektive Gebiete (13) wirksam sind. Dadurch kann die Innenöffnung der Stromblenden (6) größer als beim Stand der Technik gewählt werden. Dies führt zu einem kleinohmschen und thermischen Widerstand und ermöglicht eine hohe Ausgangsleistung.
PCT/DE2002/000471 2001-02-08 2002-02-08 Halbleiter-laser mit vertikalem resonator WO2002063733A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02714002A EP1374356A2 (de) 2001-02-08 2002-02-08 Halbleiter-laser mit vertikalem resonator
JP2002563573A JP2004518304A (ja) 2001-02-08 2002-02-08 半導体レーザ
US10/637,191 US7177339B2 (en) 2001-02-08 2003-08-08 Semiconductor laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10105722.9 2001-02-08
DE10105722A DE10105722B4 (de) 2001-02-08 2001-02-08 Halbleiter-Laser mit Vertikalresonator und modenselektiven Gebieten

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/637,191 Continuation US7177339B2 (en) 2001-02-08 2003-08-08 Semiconductor laser

Publications (2)

Publication Number Publication Date
WO2002063733A2 WO2002063733A2 (de) 2002-08-15
WO2002063733A3 true WO2002063733A3 (de) 2003-10-16

Family

ID=7673278

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000471 WO2002063733A2 (de) 2001-02-08 2002-02-08 Halbleiter-laser mit vertikalem resonator

Country Status (5)

Country Link
US (1) US7177339B2 (de)
EP (1) EP1374356A2 (de)
JP (1) JP2004518304A (de)
DE (1) DE10105722B4 (de)
WO (1) WO2002063733A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2855661A1 (fr) * 2003-05-26 2004-12-03 Optogone Sa Laser a cavite verticale et a emission surfacique, systeme de telecommunication et procede correspondant
EP1496583B1 (de) * 2003-07-07 2016-05-18 II-VI Laser Enterprise GmbH Oberflächenemittierender Laser mit vertikalem Resonator mit verbesserter Kontrolle der transversalen Moden und Herstellungsverfahren desselben
KR100624433B1 (ko) * 2004-08-13 2006-09-19 삼성전자주식회사 Ｐ형 반도체 탄소 나노튜브 및 그 제조 방법
JP4855038B2 (ja) * 2004-10-14 2012-01-18 三星電子株式会社 ファンネル構造のｖｅｃｓｅｌ
KR100982421B1 (ko) * 2004-10-14 2010-09-15 삼성전자주식회사 깔대기 형태의 전류주입영역을 구비하는 면발광 고출력레이저 소자
US20070019696A1 (en) * 2005-07-22 2007-01-25 Li-Hung Lai Vertical cavity surface emitting laser and method for fabricating the same
DE102006046297A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE102017108104A1 (de) 2017-04-13 2018-10-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser und Verfahren zu dessen Herstellung

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US5493577A (en) * 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
US6144682A (en) * 1998-10-29 2000-11-07 Xerox Corporation Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser

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US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5446752A (en) * 1993-09-21 1995-08-29 Motorola VCSEL with current blocking layer offset
GB2295270A (en) * 1994-11-14 1996-05-22 Sharp Kk Surface-emitting laser with profiled active region
US5557627A (en) * 1995-05-19 1996-09-17 Sandia Corporation Visible-wavelength semiconductor lasers and arrays
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
US5881085A (en) * 1996-07-25 1999-03-09 Picolight, Incorporated Lens comprising at least one oxidized layer and method for forming same
US5977604A (en) * 1996-03-08 1999-11-02 The Regents Of The University Of California Buried layer in a semiconductor formed by bonding
US5903590A (en) * 1996-05-20 1999-05-11 Sandia Corporation Vertical-cavity surface-emitting laser device
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US5764674A (en) * 1996-06-28 1998-06-09 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
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NISHIYAMA N ET AL: "MULTI-OXIDE LAYER STRUCTURE FOR SINGLE-MODE OPERATION IN VERTICAL-CAVITY SURFACE-EMITTING LASERS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 12, no. 6, June 2000 (2000-06-01), pages 606 - 609, XP000951817, ISSN: 1041-1135 *
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Also Published As

Publication number Publication date
DE10105722B4 (de) 2006-12-14
WO2002063733A2 (de) 2002-08-15
EP1374356A2 (de) 2004-01-02
US7177339B2 (en) 2007-02-13
US20040032892A1 (en) 2004-02-19
JP2004518304A (ja) 2004-06-17
DE10105722A1 (de) 2002-09-05

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