WO2002065516A3 - Improved process for deposition of semiconductor films - Google Patents
Improved process for deposition of semiconductor films Download PDFInfo
- Publication number
- WO2002065516A3 WO2002065516A3 PCT/US2002/004746 US0204746W WO02065516A3 WO 2002065516 A3 WO2002065516 A3 WO 2002065516A3 US 0204746 W US0204746 W US 0204746W WO 02065516 A3 WO02065516 A3 WO 02065516A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- films
- deposition
- improved process
- semiconductor films
- precursors
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 230000008021 deposition Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012707 chemical precursor Substances 0.000 abstract 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 150000004756 silanes Chemical class 0.000 abstract 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 abstract 1
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2002565348A JP4224847B2 (en) | 2001-02-12 | 2002-02-12 | Improved deposition method for semiconductor films. |
KR1020087027835A KR100934169B1 (en) | 2001-02-12 | 2002-02-12 | Improved process for deposition of semiconductor films |
EP02706308A EP1374290B1 (en) | 2001-02-12 | 2002-02-12 | Improved process for deposition of semiconductor films |
DE60227350T DE60227350D1 (en) | 2001-02-12 | 2002-02-12 | IMPROVED SEPARATION METHOD OF SEMICONDUCTOR LAYERS |
AU2002240403A AU2002240403A1 (en) | 2001-02-12 | 2002-02-12 | Improved process for deposition of semiconductor films |
KR10-2003-7010623A KR20030076676A (en) | 2001-02-12 | 2002-02-12 | Improved process for deposition of semiconductor films |
Applications Claiming Priority (14)
Application Number | Priority Date | Filing Date | Title |
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US26833701P | 2001-02-12 | 2001-02-12 | |
US60/268,337 | 2001-02-12 | ||
US27925601P | 2001-03-27 | 2001-03-27 | |
US60/279,256 | 2001-03-27 | ||
US31160901P | 2001-08-09 | 2001-08-09 | |
US60/311,609 | 2001-08-09 | ||
US32364901P | 2001-09-19 | 2001-09-19 | |
US60/323,649 | 2001-09-19 | ||
US33269601P | 2001-11-13 | 2001-11-13 | |
US60/332,696 | 2001-11-13 | ||
US33372401P | 2001-11-28 | 2001-11-28 | |
US60/333,724 | 2001-11-28 | ||
US34045401P | 2001-12-07 | 2001-12-07 | |
US60/340,454 | 2001-12-07 |
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WO2002065516A2 WO2002065516A2 (en) | 2002-08-22 |
WO2002065516A3 true WO2002065516A3 (en) | 2003-11-13 |
WO2002065516A8 WO2002065516A8 (en) | 2004-07-08 |
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PCT/US2002/002921 WO2002080244A2 (en) | 2001-02-12 | 2002-02-01 | Improved process for deposition of semiconductor films |
PCT/US2002/004743 WO2002065508A2 (en) | 2001-02-12 | 2002-02-12 | Dopant precursors and processes |
PCT/US2002/004746 WO2002065516A2 (en) | 2001-02-12 | 2002-02-12 | Improved process for deposition of semiconductor films |
PCT/US2002/004750 WO2002065517A2 (en) | 2001-02-12 | 2002-02-12 | Deposition method over mixed substrates using trisilane |
PCT/US2002/004751 WO2002064853A2 (en) | 2001-02-12 | 2002-02-12 | Thin films and methods of making them using trisilane |
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PCT/US2002/002921 WO2002080244A2 (en) | 2001-02-12 | 2002-02-01 | Improved process for deposition of semiconductor films |
PCT/US2002/004743 WO2002065508A2 (en) | 2001-02-12 | 2002-02-12 | Dopant precursors and processes |
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PCT/US2002/004750 WO2002065517A2 (en) | 2001-02-12 | 2002-02-12 | Deposition method over mixed substrates using trisilane |
PCT/US2002/004751 WO2002064853A2 (en) | 2001-02-12 | 2002-02-12 | Thin films and methods of making them using trisilane |
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US (15) | US6900115B2 (en) |
EP (3) | EP1421607A2 (en) |
JP (8) | JP4866534B2 (en) |
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AT (1) | ATE400060T1 (en) |
AU (2) | AU2002306436A1 (en) |
DE (2) | DE60227350D1 (en) |
WO (5) | WO2002080244A2 (en) |
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US6143631A (en) * | 1998-05-04 | 2000-11-07 | Micron Technology, Inc. | Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon |
US6974766B1 (en) | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
JP4029420B2 (en) * | 1999-07-15 | 2008-01-09 | 独立行政法人科学技術振興機構 | Millimeter-wave / far-infrared photodetector |
US6620723B1 (en) * | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
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