WO2003019663A1 - Semiconductor storage and its manufacturing method - Google Patents

Semiconductor storage and its manufacturing method Download PDF

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Publication number
WO2003019663A1
WO2003019663A1 PCT/JP2002/005613 JP0205613W WO03019663A1 WO 2003019663 A1 WO2003019663 A1 WO 2003019663A1 JP 0205613 W JP0205613 W JP 0205613W WO 03019663 A1 WO03019663 A1 WO 03019663A1
Authority
WO
WIPO (PCT)
Prior art keywords
misfet
semiconductor layer
multilayer structure
gate electrode
manufacturing
Prior art date
Application number
PCT/JP2002/005613
Other languages
French (fr)
Japanese (ja)
Inventor
Takeshi Hashimoto
Hidetoshi Iwai
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of WO2003019663A1 publication Critical patent/WO2003019663A1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Abstract

A memory cell of an SRAM is composed of a transfer MISFET, a drive MISFET, and a load MISFET fabricated over the drive MISFET. The load MISFET has a vertical structure where a gate electrode (23) is disposed over the side face of a multilayer structure (P) extending perpendicularly to a major surface of a semiconductor substrate (1), with a gate insulating film (22) interposed between the gate electrode (23) and the multilayer structure (P). The multilayer structure (P) is composed of polycrystalline silicon films: a lower semiconductor layer (13), an intermediate semiconductor layer (14), and an upper semiconductor layer (15) in order from below.
PCT/JP2002/005613 2001-08-24 2002-06-06 Semiconductor storage and its manufacturing method WO2003019663A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-255202 2001-08-24
JP2001255202A JP2003068883A (en) 2001-08-24 2001-08-24 Semiconductor storage device

Publications (1)

Publication Number Publication Date
WO2003019663A1 true WO2003019663A1 (en) 2003-03-06

Family

ID=19083220

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/005613 WO2003019663A1 (en) 2001-08-24 2002-06-06 Semiconductor storage and its manufacturing method

Country Status (3)

Country Link
JP (1) JP2003068883A (en)
TW (1) TW571433B (en)
WO (1) WO2003019663A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006090445A1 (en) * 2005-02-23 2006-08-31 Fujitsu Limited Semiconductor circuit device, and method for manufacturing the semiconductor circuit device
US7161215B2 (en) 2002-07-31 2007-01-09 Renesas Technology Corp. Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
US7259052B2 (en) 2003-01-14 2007-08-21 Renesas Technology Corp. Manufacture of a semiconductor integrated circuit device including a pluarality of a columnar laminates having different spacing in different directions
US7279754B2 (en) 2002-07-08 2007-10-09 Renesas Technology Corp. Semiconductor memory device and a method of manufacturing the same
JP2014225491A (en) * 2013-05-15 2014-12-04 猛英 白土 Semiconductor device

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Publication number Priority date Publication date Assignee Title
JP4606006B2 (en) * 2003-09-11 2011-01-05 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP2007013196A (en) * 2006-08-23 2007-01-18 Renesas Technology Corp Semiconductor device
JP2008159669A (en) * 2006-12-21 2008-07-10 Matsushita Electric Ind Co Ltd Semiconductor memory
US8183628B2 (en) 2007-10-29 2012-05-22 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8378425B2 (en) 2008-01-29 2013-02-19 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP5317343B2 (en) 2009-04-28 2013-10-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Semiconductor device and manufacturing method thereof
JP5299422B2 (en) 2008-04-16 2013-09-25 日本電気株式会社 Semiconductor device and manufacturing method thereof
JP4987926B2 (en) 2009-09-16 2012-08-01 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Semiconductor device
JP5356970B2 (en) 2009-10-01 2013-12-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Semiconductor device
CN102725842B (en) * 2010-02-05 2014-12-03 株式会社半导体能源研究所 Semiconductor device
JP4912513B2 (en) 2010-03-08 2012-04-11 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Solid-state imaging device
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
JP5066590B2 (en) 2010-06-09 2012-11-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Semiconductor device and manufacturing method thereof
JP5087655B2 (en) 2010-06-15 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Semiconductor device and manufacturing method thereof
CN102832221B (en) * 2011-06-16 2016-10-26 三星电子株式会社 There is semiconductor device of vertical device and non-vertical device and forming method thereof
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01265558A (en) * 1988-04-15 1989-10-23 Sony Corp Semiconductor memory
US5198683A (en) * 1991-05-03 1993-03-30 Motorola, Inc. Integrated circuit memory device and structural layout thereof
JPH06104405A (en) * 1992-09-22 1994-04-15 Toshiba Corp Static memory
US5627390A (en) * 1994-05-26 1997-05-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with columns
JPH09232447A (en) * 1996-02-19 1997-09-05 Nec Corp Semiconductor memory
US5670803A (en) * 1995-02-08 1997-09-23 International Business Machines Corporation Three-dimensional SRAM trench structure and fabrication method therefor
US5994735A (en) * 1993-05-12 1999-11-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof
JP2001028443A (en) * 1999-05-13 2001-01-30 Hitachi Ltd Semiconductor device and manufacture thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153273A (en) * 1993-11-26 1995-06-16 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01265558A (en) * 1988-04-15 1989-10-23 Sony Corp Semiconductor memory
US5198683A (en) * 1991-05-03 1993-03-30 Motorola, Inc. Integrated circuit memory device and structural layout thereof
JPH06104405A (en) * 1992-09-22 1994-04-15 Toshiba Corp Static memory
US5994735A (en) * 1993-05-12 1999-11-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof
US5627390A (en) * 1994-05-26 1997-05-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with columns
US5670803A (en) * 1995-02-08 1997-09-23 International Business Machines Corporation Three-dimensional SRAM trench structure and fabrication method therefor
JPH09232447A (en) * 1996-02-19 1997-09-05 Nec Corp Semiconductor memory
JP2001028443A (en) * 1999-05-13 2001-01-30 Hitachi Ltd Semiconductor device and manufacture thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHIGEYOSHI WATANABE ET AL.: "A novel circuit technology with surrounding gate transistors(SGT's) for ultra high density DRAM's", IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 30, no. 9, September 1995 (1995-09-01), pages 960 - 971, XP000526202 *

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598133B2 (en) 2002-07-08 2009-10-06 Renesas Technology Corp Semiconductor memory device and a method of manufacturing the same
US8652895B2 (en) 2002-07-08 2014-02-18 Renesas Electronics Corporation Semiconductor memory device and a method of manufacturing the same
US7981738B2 (en) 2002-07-08 2011-07-19 Renesas Electronics Corporation Semiconductor memory device and a method of manufacturing the same
US7279754B2 (en) 2002-07-08 2007-10-09 Renesas Technology Corp. Semiconductor memory device and a method of manufacturing the same
US7829952B2 (en) 2002-07-08 2010-11-09 Renesas Electronics Corporation Semiconductor memory device and a method of manufacturing the same
US7972920B2 (en) 2002-07-31 2011-07-05 Hitachi Ulsi Systems Co., Ltd. Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
US7190031B2 (en) 2002-07-31 2007-03-13 Renesas Technology Corp. Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
US8476138B2 (en) 2002-07-31 2013-07-02 Hitachi Ulsi Systems Co., Ltd. Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
US7161215B2 (en) 2002-07-31 2007-01-09 Renesas Technology Corp. Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
US7495289B2 (en) 2002-07-31 2009-02-24 Renesas Technology Corp. Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
US7701020B2 (en) 2002-07-31 2010-04-20 Renesas Technology Corp. Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
US7482650B2 (en) 2003-01-14 2009-01-27 Renesas Technology Corp. Method of manufacturing a semiconductor integrated circuit device having a columnar laminate
US7306984B2 (en) 2003-01-14 2007-12-11 Renesas Technology Corp. Method of manufacture of a semiconductor integrated circuit device including a plurality of columnar laminates having different spacing in different directions
US7259052B2 (en) 2003-01-14 2007-08-21 Renesas Technology Corp. Manufacture of a semiconductor integrated circuit device including a pluarality of a columnar laminates having different spacing in different directions
WO2006090445A1 (en) * 2005-02-23 2006-08-31 Fujitsu Limited Semiconductor circuit device, and method for manufacturing the semiconductor circuit device
JP2014225491A (en) * 2013-05-15 2014-12-04 猛英 白土 Semiconductor device

Also Published As

Publication number Publication date
TW571433B (en) 2004-01-11
JP2003068883A (en) 2003-03-07

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