WO2003026021A3 - Gallium nitride based diodes with low forward voltage and low reverse current operation - Google Patents

Gallium nitride based diodes with low forward voltage and low reverse current operation Download PDF

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Publication number
WO2003026021A3
WO2003026021A3 PCT/US2002/021702 US0221702W WO03026021A3 WO 2003026021 A3 WO2003026021 A3 WO 2003026021A3 US 0221702 W US0221702 W US 0221702W WO 03026021 A3 WO03026021 A3 WO 03026021A3
Authority
WO
WIPO (PCT)
Prior art keywords
low
diode
reverse current
potential
gallium nitride
Prior art date
Application number
PCT/US2002/021702
Other languages
French (fr)
Other versions
WO2003026021A2 (en
Inventor
Primit Parikh
Umesh Mishra
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Priority to AT02798906T priority Critical patent/ATE515803T1/en
Priority to CA2454310A priority patent/CA2454310C/en
Priority to JP2003529535A priority patent/JP4874518B2/en
Priority to KR1020047001033A priority patent/KR100917699B1/en
Priority to EP02798906A priority patent/EP1410445B1/en
Publication of WO2003026021A2 publication Critical patent/WO2003026021A2/en
Publication of WO2003026021A3 publication Critical patent/WO2003026021A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode (10) made from the GaN material system in which the Fermi level (or surface potential) of is not pinned. The barrier potential (33) at the metal-to-semiconductor junction varies depending on the type of metal (16) used and using particular metals lowers the diode's Schottky barrier potential (33) and results in a Vf in the range of 0.1-0.3V. In another embodiment (40) a trench structure (45) is formed on the Schottky diodes semiconductor material (44) to reduce reverse leakage current and comprises a number of parallel, equally spaced trenches (46) with mesa regions (49) between adjacent trenches (46). A third embodiment of the invention provides a GaN tunnel diode with a low Vf resulting from the tunneling of electrons through the barrier potential (81), instead of over it. An embodiment of the tunnel diode (120) can also have a trench structure (121) to reduce reverse leakage current.
PCT/US2002/021702 2001-07-23 2002-07-08 Gallium nitride based diodes with low forward voltage and low reverse current operation WO2003026021A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AT02798906T ATE515803T1 (en) 2001-07-23 2002-07-08 GALLIUM NITRIDE BASED DIODES OPERATE AT LOW FORWARD VOLTAGE AND LOW REVERSE CURRENT
CA2454310A CA2454310C (en) 2001-07-23 2002-07-08 Gallium nitride based diodes with low forward voltage and low reverse current operation
JP2003529535A JP4874518B2 (en) 2001-07-23 2002-07-08 Gallium nitride based diodes with low forward voltage and low reverse current operating characteristics
KR1020047001033A KR100917699B1 (en) 2001-07-23 2002-07-08 Gallium nitride based diodes with low forward voltage and low reverse current operation
EP02798906A EP1410445B1 (en) 2001-07-23 2002-07-08 Gallium nitride based diodes with low forward voltage and low reverse current operation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/911,155 2001-07-23
US09/911,155 US20030015708A1 (en) 2001-07-23 2001-07-23 Gallium nitride based diodes with low forward voltage and low reverse current operation

Publications (2)

Publication Number Publication Date
WO2003026021A2 WO2003026021A2 (en) 2003-03-27
WO2003026021A3 true WO2003026021A3 (en) 2003-11-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/021702 WO2003026021A2 (en) 2001-07-23 2002-07-08 Gallium nitride based diodes with low forward voltage and low reverse current operation

Country Status (9)

Country Link
US (4) US20030015708A1 (en)
EP (2) EP1410445B1 (en)
JP (2) JP4874518B2 (en)
KR (1) KR100917699B1 (en)
CN (2) CN100373634C (en)
AT (1) ATE515803T1 (en)
CA (1) CA2454310C (en)
TW (1) TW564486B (en)
WO (1) WO2003026021A2 (en)

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