WO2003032375A3 - System and method for process monitoring of polysilicon etch - Google Patents

System and method for process monitoring of polysilicon etch Download PDF

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Publication number
WO2003032375A3
WO2003032375A3 PCT/US2002/030839 US0230839W WO03032375A3 WO 2003032375 A3 WO2003032375 A3 WO 2003032375A3 US 0230839 W US0230839 W US 0230839W WO 03032375 A3 WO03032375 A3 WO 03032375A3
Authority
WO
WIPO (PCT)
Prior art keywords
top gate
dimensions
signature
coupled
wafer structure
Prior art date
Application number
PCT/US2002/030839
Other languages
French (fr)
Other versions
WO2003032375A2 (en
Inventor
Bhanwar Singh
Bharath Rangarajan
Michael K Templeton
Original Assignee
Advanced Micro Devices Inc
Bhanwar Singh
Bharath Rangarajan
Michael K Templeton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc, Bhanwar Singh, Bharath Rangarajan, Michael K Templeton filed Critical Advanced Micro Devices Inc
Priority to AU2002327761A priority Critical patent/AU2002327761A1/en
Publication of WO2003032375A2 publication Critical patent/WO2003032375A2/en
Publication of WO2003032375A3 publication Critical patent/WO2003032375A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection

Abstract

An in-line system (16, 20) and method for determining T-top gate dimensions is provided. The system (16, 20) comprises a wafer structure (22) undergoing a T-top gate formation process; a scatterometry system (42) coupled to the formation process for directing light (32) at and collecting reflected light (34) from the wafer structure (22); a signature store (18, 41); a T-top gate formation analysis system (40) coupled to the scatterometry system (42) and to the signature store (18, 41) for determining the T-top gate dimensions; and a feedback control system (44) coupled to the T-top gate formation analysis system (16, 40) for optimizing T-top gate formation. The method comprises providing a wafer structure (22) having a T-top gate (80) formed thereon; generating a signature associated with the T-top gate; comparing the generated signature with a signature store to determine the dimensions of the T-top gate; if the dimensions of the T-top gate are not within a pre-determined acceptable range, then adjusting T-top gate process parameters using feedback control.
PCT/US2002/030839 2001-10-09 2002-09-26 System and method for process monitoring of polysilicon etch WO2003032375A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002327761A AU2002327761A1 (en) 2001-10-09 2002-09-26 System and method for process monitoring of polysilicon etch

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/973,231 US6778268B1 (en) 2001-10-09 2001-10-09 System and method for process monitoring of polysilicon etch
US09/973,231 2001-10-09

Publications (2)

Publication Number Publication Date
WO2003032375A2 WO2003032375A2 (en) 2003-04-17
WO2003032375A3 true WO2003032375A3 (en) 2003-11-06

Family

ID=25520650

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/030839 WO2003032375A2 (en) 2001-10-09 2002-09-26 System and method for process monitoring of polysilicon etch

Country Status (3)

Country Link
US (1) US6778268B1 (en)
AU (1) AU2002327761A1 (en)
WO (1) WO2003032375A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3854539B2 (en) * 2002-05-29 2006-12-06 株式会社日立ハイテクノロジーズ Method and apparatus for measuring size and three-dimensional shape of fine pattern of semiconductor wafer
JP4302965B2 (en) * 2002-11-01 2009-07-29 株式会社日立ハイテクノロジーズ Semiconductor device manufacturing method and manufacturing system thereof
KR100816753B1 (en) * 2006-10-09 2008-03-25 삼성전자주식회사 Method for forming semiconductor device
US8024676B2 (en) * 2009-02-13 2011-09-20 Tokyo Electron Limited Multi-pitch scatterometry targets
US20170059303A1 (en) * 2015-08-31 2017-03-02 Robert Alan May Nondestructive optical detection of trace undercut, width and thickness

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0352740A2 (en) * 1988-07-28 1990-01-31 Applied Materials, Inc. Laser interferometer system for monitoring and controlling IC processing
US5563079A (en) * 1992-06-09 1996-10-08 Goldstar Co., Ltd. Method of making a field effect transistor
US6270622B1 (en) * 1998-09-30 2001-08-07 Lam Research Corporation Method and apparatus for improving accuracy of plasma etching process

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710642A (en) * 1985-08-20 1987-12-01 Mcneil John R Optical scatterometer having improved sensitivity and bandwidth
US5164790A (en) * 1991-02-27 1992-11-17 Mcneil John R Simple CD measurement of periodic structures on photomasks
US5889593A (en) * 1997-02-26 1999-03-30 Kla Instruments Corporation Optical system and method for angle-dependent reflection or transmission measurement
US6265273B1 (en) * 1999-07-23 2001-07-24 Advanced Micro Devices, Inc. Method of forming rectangular shaped spacers
US6281027B1 (en) * 1999-09-15 2001-08-28 Therma-Wave Inc Spatial averaging technique for ellipsometry and reflectometry
US6259521B1 (en) * 1999-10-05 2001-07-10 Advanced Micro Devices, Inc. Method and apparatus for controlling photolithography parameters based on photoresist images
US6337262B1 (en) * 2000-03-06 2002-01-08 Chartered Semiconductor Manufacturing Ltd. Self aligned T-top gate process integration
US6562248B1 (en) * 2001-03-26 2003-05-13 Advanced Micro Devices, Inc. Active control of phase shift mask etching process
US6545753B2 (en) * 2001-06-27 2003-04-08 Advanced Micro Devices, Inc. Using scatterometry for etch end points for dual damascene process
US6649426B2 (en) * 2001-06-28 2003-11-18 Advanced Micro Devices, Inc. System and method for active control of spacer deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0352740A2 (en) * 1988-07-28 1990-01-31 Applied Materials, Inc. Laser interferometer system for monitoring and controlling IC processing
US5563079A (en) * 1992-06-09 1996-10-08 Goldstar Co., Ltd. Method of making a field effect transistor
US6270622B1 (en) * 1998-09-30 2001-08-07 Lam Research Corporation Method and apparatus for improving accuracy of plasma etching process

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BUSHMAN S ET AL: "SCATTEROMETRY MEASUREMENTS FOR PROCESS MONITORING OF POLYSILICON GATE ETCH", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3213, 1997, pages 79 - 90, XP000890146 *
WATTS BUTLER S ET AL: "SUPERVISORY RUN-TO-RUN CONTROL OF POLYSILICON GATE ETCH USING IN SITU ELLIPSOMETRY", IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, IEEE INC, NEW YORK, US, vol. 7, no. 2, 1 May 1994 (1994-05-01), pages 193 - 201, XP000453332, ISSN: 0894-6507 *

Also Published As

Publication number Publication date
WO2003032375A2 (en) 2003-04-17
US6778268B1 (en) 2004-08-17
AU2002327761A1 (en) 2003-04-22

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