WO2003035945A3 - Substrate for epitaxy - Google Patents
Substrate for epitaxy Download PDFInfo
- Publication number
- WO2003035945A3 WO2003035945A3 PCT/PL2002/000077 PL0200077W WO03035945A3 WO 2003035945 A3 WO2003035945 A3 WO 2003035945A3 PL 0200077 W PL0200077 W PL 0200077W WO 03035945 A3 WO03035945 A3 WO 03035945A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nitride
- gallium
- mono
- crystal
- crystals
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Abstract
Priority Applications (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT02783869T ATE452999T1 (en) | 2001-10-26 | 2002-10-25 | SUBSTRATE FOR EPITAXY |
UA20040503964A UA82180C2 (en) | 2001-10-26 | 2002-10-25 | Bulk mono-crystals of gallium nitride (variants) and basis for epitaxy growth process |
JP2003538438A JP4693351B2 (en) | 2001-10-26 | 2002-10-25 | Epitaxial growth substrate |
KR1020047006223A KR100904501B1 (en) | 2001-10-26 | 2002-10-25 | Substrate for epitaxy |
HU0401882A HUP0401882A3 (en) | 2001-10-26 | 2002-10-25 | Substrate for epitaxy |
AU2002347692A AU2002347692C1 (en) | 2001-10-26 | 2002-10-25 | Bulk monocrystalline gallium nitride |
IL16142002A IL161420A0 (en) | 2001-10-26 | 2002-10-25 | Substrate for epitaxy |
DE60234856T DE60234856D1 (en) | 2001-10-26 | 2002-10-25 | SUBSTRATE FOR EPITAXIA |
EP02783869A EP1442162B1 (en) | 2001-10-26 | 2002-10-25 | Substrate for epitaxy |
US10/493,747 US7132730B2 (en) | 2001-10-26 | 2002-10-25 | Bulk nitride mono-crystal including substrate for epitaxy |
CA2464083A CA2464083C (en) | 2001-10-26 | 2002-10-25 | Substrate for epitaxy |
IL161420A IL161420A (en) | 2001-10-26 | 2004-04-15 | Substrate for epitaxy |
NO20042119A NO20042119D0 (en) | 2001-10-26 | 2004-05-24 | Substrate for epitaxy |
US11/589,058 US7420261B2 (en) | 2001-10-26 | 2006-10-30 | Bulk nitride mono-crystal including substrate for epitaxy |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL35037501A PL350375A1 (en) | 2001-10-26 | 2001-10-26 | Epitaxial layer substrate |
PLP-350375 | 2001-10-26 | ||
PLP-354740 | 2002-06-26 | ||
PL354740A PL205838B1 (en) | 2002-06-26 | 2002-06-26 | Epitaxy substrate |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10493747 A-371-Of-International | 2002-10-25 | ||
US11/589,058 Continuation US7420261B2 (en) | 2001-10-26 | 2006-10-30 | Bulk nitride mono-crystal including substrate for epitaxy |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003035945A2 WO2003035945A2 (en) | 2003-05-01 |
WO2003035945A3 true WO2003035945A3 (en) | 2003-10-16 |
Family
ID=26653409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/PL2002/000077 WO2003035945A2 (en) | 2001-10-26 | 2002-10-25 | Substrate for epitaxy |
Country Status (17)
Country | Link |
---|---|
US (2) | US7132730B2 (en) |
EP (1) | EP1442162B1 (en) |
JP (2) | JP4693351B2 (en) |
KR (1) | KR100904501B1 (en) |
CN (1) | CN1316070C (en) |
AT (1) | ATE452999T1 (en) |
AU (1) | AU2002347692C1 (en) |
CA (1) | CA2464083C (en) |
DE (1) | DE60234856D1 (en) |
HU (1) | HUP0401882A3 (en) |
IL (2) | IL161420A0 (en) |
NO (1) | NO20042119D0 (en) |
PL (1) | PL225235B1 (en) |
RU (1) | RU2312176C2 (en) |
TW (1) | TWI231321B (en) |
UA (1) | UA82180C2 (en) |
WO (1) | WO2003035945A2 (en) |
Families Citing this family (180)
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Also Published As
Publication number | Publication date |
---|---|
ATE452999T1 (en) | 2010-01-15 |
CA2464083A1 (en) | 2003-05-01 |
NO20042119L (en) | 2004-05-24 |
US20040261692A1 (en) | 2004-12-30 |
JP2005506271A (en) | 2005-03-03 |
AU2002347692B2 (en) | 2007-08-02 |
TWI231321B (en) | 2005-04-21 |
EP1442162B1 (en) | 2009-12-23 |
IL161420A (en) | 2007-10-31 |
US7132730B2 (en) | 2006-11-07 |
PL225235B1 (en) | 2017-03-31 |
DE60234856D1 (en) | 2010-02-04 |
AU2002347692C1 (en) | 2008-03-06 |
JP4693351B2 (en) | 2011-06-01 |
HUP0401882A3 (en) | 2005-11-28 |
KR100904501B1 (en) | 2009-06-25 |
PL373986A1 (en) | 2005-09-19 |
RU2312176C2 (en) | 2007-12-10 |
EP1442162A2 (en) | 2004-08-04 |
UA82180C2 (en) | 2008-03-25 |
JP5123984B2 (en) | 2013-01-23 |
NO20042119D0 (en) | 2004-05-24 |
US7420261B2 (en) | 2008-09-02 |
JP2010222247A (en) | 2010-10-07 |
CN1316070C (en) | 2007-05-16 |
CN1575357A (en) | 2005-02-02 |
HUP0401882A1 (en) | 2004-12-28 |
IL161420A0 (en) | 2004-09-27 |
KR20040049324A (en) | 2004-06-11 |
RU2004116073A (en) | 2005-04-10 |
CA2464083C (en) | 2011-08-02 |
WO2003035945A2 (en) | 2003-05-01 |
US20070040240A1 (en) | 2007-02-22 |
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