WO2003036691A3 - Method of making diode having reflective layer - Google Patents

Method of making diode having reflective layer Download PDF

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Publication number
WO2003036691A3
WO2003036691A3 PCT/US2002/033357 US0233357W WO03036691A3 WO 2003036691 A3 WO2003036691 A3 WO 2003036691A3 US 0233357 W US0233357 W US 0233357W WO 03036691 A3 WO03036691 A3 WO 03036691A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
gan
reflective layer
gan layer
transparent substrate
Prior art date
Application number
PCT/US2002/033357
Other languages
French (fr)
Other versions
WO2003036691A2 (en
Inventor
Myung Cheol Yoo
Original Assignee
Oriol Inc
Myung Cheol Yoo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
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Application filed by Oriol Inc, Myung Cheol Yoo filed Critical Oriol Inc
Priority to KR1020047005880A priority Critical patent/KR100902894B1/en
Priority to JP2003539082A priority patent/JP4516749B2/en
Priority to EP02793800A priority patent/EP1459357A4/en
Publication of WO2003036691A2 publication Critical patent/WO2003036691A2/en
Publication of WO2003036691A3 publication Critical patent/WO2003036691A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Abstract

A method of forming a light emitting diode includes forming a transparent substrate (100A) and a GaN buffer layer (120) on the transparent substrate (100A). An n-GaN layer (140) is formed on the buffer layer (120). An active layer (160) is formed on the n-GaN layer (140). A p-GaN layer (180) is formed on the active layer (160). A p-electrode (240) is formed on the p-GaN layer (180) and an n-electrode (250) is formed on the n-GaN layer (140). A reflective layer (200) is formed on a second side of the transparent substrate (100A). A scribe line (not shown) is formed on the substrate (100A) for separating the diodes on the substrate. Also, a cladding layer of AlGaN (not shown) is between the p-GaN layer and the active layer.
PCT/US2002/033357 2001-10-22 2002-10-21 Method of making diode having reflective layer WO2003036691A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020047005880A KR100902894B1 (en) 2001-10-22 2002-10-21 Diode Having Reflective Layer and Method Of Making The Same
JP2003539082A JP4516749B2 (en) 2001-10-22 2002-10-21 Method for manufacturing a diode having a reflective layer
EP02793800A EP1459357A4 (en) 2001-10-22 2002-10-21 Method of making diode having reflective layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/982,980 2001-10-22
US09/982,980 US6949395B2 (en) 2001-10-22 2001-10-22 Method of making diode having reflective layer

Publications (2)

Publication Number Publication Date
WO2003036691A2 WO2003036691A2 (en) 2003-05-01
WO2003036691A3 true WO2003036691A3 (en) 2003-06-05

Family

ID=25529706

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/033357 WO2003036691A2 (en) 2001-10-22 2002-10-21 Method of making diode having reflective layer

Country Status (5)

Country Link
US (6) US6949395B2 (en)
EP (2) EP2197022A3 (en)
JP (1) JP4516749B2 (en)
KR (1) KR100902894B1 (en)
WO (1) WO2003036691A2 (en)

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