WO2003060917A3 - Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric - Google Patents

Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric Download PDF

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Publication number
WO2003060917A3
WO2003060917A3 PCT/US2002/033172 US0233172W WO03060917A3 WO 2003060917 A3 WO2003060917 A3 WO 2003060917A3 US 0233172 W US0233172 W US 0233172W WO 03060917 A3 WO03060917 A3 WO 03060917A3
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WO
WIPO (PCT)
Prior art keywords
gate oxide
ultra
thin dielectric
breakdown
memory cells
Prior art date
Application number
PCT/US2002/033172
Other languages
French (fr)
Other versions
WO2003060917A2 (en
Inventor
Jack Zezhong Peng
Original Assignee
Kilopass Technologies Inc
Jack Zezhong Peng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kilopass Technologies Inc, Jack Zezhong Peng filed Critical Kilopass Technologies Inc
Priority to AU2002365181A priority Critical patent/AU2002365181A1/en
Priority to EP02804107A priority patent/EP1459321A4/en
Priority to JP2003560928A priority patent/JP4559080B2/en
Publication of WO2003060917A2 publication Critical patent/WO2003060917A2/en
Publication of WO2003060917A3 publication Critical patent/WO2003060917A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components

Abstract

A reprogrammable non-volatile memory array and constituent memory cells is disclosed. The semiconductor memory cells each have a data storage element constructed around an ultra-thin dielectric, such as a gate oxide. The gate oxide is used to store information by stressing the ultra-thin dielectric into breakdown (soft or hard breakdown) to set the leakage current level of the memory cell. The memory cell is read by sensing the current drawn by the cell. A suitable ultra-thin dielectric is high quality gate oxide of about 50 Å thickness or less, as commonly available, from presently available advanced CMOS logic processes. The memory cells are first programmed by stressing the gate oxide until soft breakdown occurs. The memory cells are then subsequently reprogrammed by increasing the breakdown of the gate oxide.
PCT/US2002/033172 2001-10-17 2002-10-15 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric WO2003060917A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002365181A AU2002365181A1 (en) 2001-10-17 2002-10-15 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
EP02804107A EP1459321A4 (en) 2001-10-17 2002-10-15 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
JP2003560928A JP4559080B2 (en) 2001-10-17 2002-10-15 Reprogrammable non-volatile memory using breakdown phenomenon of ultra-thin dielectric

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/982,314 US6700151B2 (en) 2001-10-17 2001-10-17 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
US09/982,314 2001-10-17

Publications (2)

Publication Number Publication Date
WO2003060917A2 WO2003060917A2 (en) 2003-07-24
WO2003060917A3 true WO2003060917A3 (en) 2004-07-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/033172 WO2003060917A2 (en) 2001-10-17 2002-10-15 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric

Country Status (6)

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US (2) US6700151B2 (en)
EP (1) EP1459321A4 (en)
JP (1) JP4559080B2 (en)
AU (1) AU2002365181A1 (en)
TW (1) TW586218B (en)
WO (1) WO2003060917A2 (en)

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US20030071296A1 (en) 2003-04-17
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