WO2003083493A1 - Ring type contactor pad of integrated silicone contactor - Google Patents

Ring type contactor pad of integrated silicone contactor Download PDF

Info

Publication number
WO2003083493A1
WO2003083493A1 PCT/KR2003/000610 KR0300610W WO03083493A1 WO 2003083493 A1 WO2003083493 A1 WO 2003083493A1 KR 0300610 W KR0300610 W KR 0300610W WO 03083493 A1 WO03083493 A1 WO 03083493A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon element
conductive
contactor
semiconductor device
ring
Prior art date
Application number
PCT/KR2003/000610
Other languages
French (fr)
Inventor
Jong-Cheon Shin
Young-Bae Chung
Original Assignee
Isc Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isc Technology Co., Ltd. filed Critical Isc Technology Co., Ltd.
Priority to AU2003218803A priority Critical patent/AU2003218803A1/en
Publication of WO2003083493A1 publication Critical patent/WO2003083493A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers

Definitions

  • the present invention relates to a contact pad in which a ring-shaped conductive material is mounted on the top surface of a conductive silicon element in an integrated silicon contactor having the conductive silicon element located at a region in contact with a ball lead of a semiconductor device and an insulating silicon element serving as an insulating layer between the conductive silicon elements and, and more particularly, to an electrical contact pad in which an annular metal ring plated with gold (Au) or platinum (Pd) having excellent conductivity, or a ring having a contact pad with a large via hole formed thereon in a flexible PCB is mounted on the top surface of a conductive silicon element that electrically connects a contact pad of a socket board that performs a test on a semiconductor device and a ball lead(also called "lead terminal") of a semiconductor device to each other.
  • Au gold
  • Pd platinum
  • FIG. 1 shows an invention of an earlier application that was applied by the present applicant.
  • the prior art will be now described with reference to FIG. 1, which shows the construction of a conventional integrated silicon contactor 20.
  • the integrated silicon contactor 20 includes a conductive silicon element 8 in contact with a ball lead 4 of a ball grid array (BGA) semiconductor device 2, and an insulating silicon element 6 serving as an insulating layer between the conductive silicon elements 8.
  • the silicon contactor 20 is mounted on a socket board 12, i.e., a printed circuit board (PCB) that performs a test on the semiconductor device.
  • the conductive silicon element 8 is disposed on a contact pad 10 of the socket board 12, so that the ball lead 4 of the semiconductor device 2 is electrically connected to the contact pad 10 of the socket board 12.
  • the conductive silicon element 8 is made in such a manner that silicon is mixed with a conductive powder and then the resultant mixture is hardened, and serves as an electrical conductor.
  • silicon of the conductive silicon element 8 has elasticity, good contact can be accomplished although the conductive silicon element 8 is not level with the socket board 12 or the semiconductor device 2.
  • the insulating silicon element 6 is filled between the conductive silicon elements 8, thus stabilizing an overall location of the silicon contactor 20.
  • the insulating silicon element 6 causes the conductive silicon element 8 to return to its original shape in such a manner as to upwardly expand.
  • An object of the present invention is to provide a ring-shaped contactor pad in which gold (Au) or platinum (Pd) having excellent conductivity is plated on the top surface of a conductive silicon element in an existing integrated silicon contactor so that respective conductive silicon elements are independently depressed, thereby easily coping with flatness of peripheral devices and allowing simultaneous electrical contact of several semiconductor devices only with small force when a socket is depressed.
  • FIG. 1 is a schematic view illustrating the construction of an integrated silicon contactor according to the prior art
  • FIG. 2a is a schematic view illustrating the construction of an integrated silicon contactor according to a preferred embodiment of the present invention
  • FIG. 2b is an exploded plan view of the integrated silicon contactor shown in
  • FIG. 2a is a diagrammatic representation of FIG. 1a.
  • the present invention is a modification of the integrated silicon contactor that was earlier applied by the present applicant, which was described in 'Background Art' section herein.
  • the present invention will be now described in detail hereinafter in connection with a preferred embodiment with reference to the accompanying drawings.
  • a silicon contactor 20 of the present invention includes a conductive silicon element 8 located at a region which is in contact with a ball lead 4 of a ball grid array (BGA) semiconductor device 2, and an insulating silicon element 6 located at a region which is not in contact with the ball lead 4 of the semiconductor device 2 to support the conductive silicon element 8 and serving as an insulating layer.
  • BGA ball grid array
  • annular metal ring plated with gold (Au) or platinum (Pd) of excellent conductivity, as a ring-shaped conductive material 7, is mounted on the top surface of the conductive silicon element 8 that electrically connects a contact pad 10 of a socket board 12 that performs a test on the semiconductor device 2 and the lead terminal 4 of the semiconductor device 2 to each other.
  • a ring in which a via hole of a contact pad in the flexible printed circuit board (PCB) is made large may be used as the annular metal ring 7.
  • the annular ring 7 of conductive material is mounted on the top surface of the conductive silicon element 8 according to the present invention.
  • the insulating silicon element 6 is filled between the conductive silicon elements 8 so that an overall location of the contactor 20 can be stabilized. Furthermore, it allows the conductive silicon element 8 to return to its original shape in such a manner as to upwardly expand when the ball lead 4 of the semiconductor device 2 is depressed.
  • the conductive silicon element 8 is made in such a manner that silicon is mixed with a conductive powder and then the resultant mixture is hardened, and serves as an electrical conductor.
  • the bottom portion of the conductive silicon element 8 is protruded from the bottom portion of the insulating silicon element 6 in such a manner that the conductive silicon element 8 is vertically longer than the insulating silicon element 6, as shown in an enlarged view of FIG. 2a. This is to ensure good contact between the conductive silicon element 8 and the contact pad 10 of the socket board 12.
  • the bottom portion of the conductive silicon element 8 may not be protruded.
  • the length 'h' of a protruded portion of the bottom portion of the conductive silicon element 8 is about 20 ⁇ 50 m.
  • the contactor is advantageously applied to a test system in which several semiconductor devices 2 are simultaneously depressed in order to accomplish an electrical contact unlike the existing electrical contact pad.
  • the ring type contactor pad of the present invention has new effects in that it can be advantageously applied to a test system in which several semiconductor devices are simultaneously depressed in order to accomplish an electrical contact unlike the existing electrical contact pad, and can improve the characteristics of the devices since respective conductive silicon elements are independently depressed to easily cope with flatness of the peripheral devices. Furthermore, the present invention has an advantageous effect in that it can extend the life span of the contactor since the conductive silicon element within the metal ring is not spread out and its displacement is minimized, when it is depressed by the ball lead of the semiconductor device. While the present invention has been described with reference to the particular illustrative embodiments, it is not to be restricted by the embodiments but only by the appended claims. It is to be appreciated that those skilled in the art can change or modify the embodiments without departing from the scope and spirit of the present invention.

Abstract

Disclosed herein is a ring type contactor pad of an integrated silicone contactor. The integrated silicone contactor comprises a conductive silicone element which is located in a region being in contact with a ball lead of the BGA (Ball grid array) semiconductor device; and an insulating silicon element which is located in a region not in contact with the ball lead of the semiconductor device to support the conductive silicon element and serves as an insulation layer. According to the present invention, a ring-shaped conductive material made from, e.g., gold (Au) or platinum (Pd), is mounted on the upper surface of the conductive silicon element which connects a contact pad of a socket board that performs a semiconductor test with a lead of the semiconductor device.

Description

RING TYPE CONTACTOR PAD OF INTEGRATED SILICONE CONTACTOR
Technical Field The present invention relates to a contact pad in which a ring-shaped conductive material is mounted on the top surface of a conductive silicon element in an integrated silicon contactor having the conductive silicon element located at a region in contact with a ball lead of a semiconductor device and an insulating silicon element serving as an insulating layer between the conductive silicon elements and, and more particularly, to an electrical contact pad in which an annular metal ring plated with gold (Au) or platinum (Pd) having excellent conductivity, or a ring having a contact pad with a large via hole formed thereon in a flexible PCB is mounted on the top surface of a conductive silicon element that electrically connects a contact pad of a socket board that performs a test on a semiconductor device and a ball lead(also called "lead terminal") of a semiconductor device to each other.
Background Art
An invention of an earlier application that was applied by the present applicant is shown in FIG. 1. The prior art will be now described with reference to FIG. 1, which shows the construction of a conventional integrated silicon contactor 20.
As shown in FIG. 1, The integrated silicon contactor 20 includes a conductive silicon element 8 in contact with a ball lead 4 of a ball grid array (BGA) semiconductor device 2, and an insulating silicon element 6 serving as an insulating layer between the conductive silicon elements 8. The silicon contactor 20 is mounted on a socket board 12, i.e., a printed circuit board (PCB) that performs a test on the semiconductor device. The conductive silicon element 8 is disposed on a contact pad 10 of the socket board 12, so that the ball lead 4 of the semiconductor device 2 is electrically connected to the contact pad 10 of the socket board 12. The conductive silicon element 8 is made in such a manner that silicon is mixed with a conductive powder and then the resultant mixture is hardened, and serves as an electrical conductor. Since silicon of the conductive silicon element 8 has elasticity, good contact can be accomplished although the conductive silicon element 8 is not level with the socket board 12 or the semiconductor device 2. The insulating silicon element 6 is filled between the conductive silicon elements 8, thus stabilizing an overall location of the silicon contactor 20. When the ball lead 4 of the semiconductor device 2 is depressed, the insulating silicon element 6 causes the conductive silicon element 8 to return to its original shape in such a manner as to upwardly expand.
Disclosure of Invention
An object of the present invention is to provide a ring-shaped contactor pad in which gold (Au) or platinum (Pd) having excellent conductivity is plated on the top surface of a conductive silicon element in an existing integrated silicon contactor so that respective conductive silicon elements are independently depressed, thereby easily coping with flatness of peripheral devices and allowing simultaneous electrical contact of several semiconductor devices only with small force when a socket is depressed.
Brief Description of Drawings
Further objects and advantages of the invention can be more fully understood from the following detailed description taken in conjunction with the accompanying drawings in which: FIG. 1 is a schematic view illustrating the construction of an integrated silicon contactor according to the prior art;
FIG. 2a is a schematic view illustrating the construction of an integrated silicon contactor according to a preferred embodiment of the present invention; and FIG. 2b is an exploded plan view of the integrated silicon contactor shown in
FIG. 2a.
Preferred embodiment for Carrying out the Invention
The present invention is a modification of the integrated silicon contactor that was earlier applied by the present applicant, which was described in 'Background Art' section herein. The present invention will be now described in detail hereinafter in connection with a preferred embodiment with reference to the accompanying drawings.
As shown in FIG. 2a, a silicon contactor 20 of the present invention includes a conductive silicon element 8 located at a region which is in contact with a ball lead 4 of a ball grid array (BGA) semiconductor device 2, and an insulating silicon element 6 located at a region which is not in contact with the ball lead 4 of the semiconductor device 2 to support the conductive silicon element 8 and serving as an insulating layer.
An annular metal ring plated with gold (Au) or platinum (Pd) of excellent conductivity, as a ring-shaped conductive material 7, is mounted on the top surface of the conductive silicon element 8 that electrically connects a contact pad 10 of a socket board 12 that performs a test on the semiconductor device 2 and the lead terminal 4 of the semiconductor device 2 to each other. Further, according to the present invention, a ring in which a via hole of a contact pad in the flexible printed circuit board (PCB) is made large may be used as the annular metal ring 7. As can be seen from FIG. 2b, the annular ring 7 of conductive material is mounted on the top surface of the conductive silicon element 8 according to the present invention. Also, the insulating silicon element 6 is filled between the conductive silicon elements 8 so that an overall location of the contactor 20 can be stabilized. Furthermore, it allows the conductive silicon element 8 to return to its original shape in such a manner as to upwardly expand when the ball lead 4 of the semiconductor device 2 is depressed.
In addition, the conductive silicon element 8 is made in such a manner that silicon is mixed with a conductive powder and then the resultant mixture is hardened, and serves as an electrical conductor. Incidentally, the bottom portion of the conductive silicon element 8 is protruded from the bottom portion of the insulating silicon element 6 in such a manner that the conductive silicon element 8 is vertically longer than the insulating silicon element 6, as shown in an enlarged view of FIG. 2a. This is to ensure good contact between the conductive silicon element 8 and the contact pad 10 of the socket board 12. However, it should be noted that the bottom portion of the conductive silicon element 8 may not be protruded. Preferably, the length 'h' of a protruded portion of the bottom portion of the conductive silicon element 8 is about 20 ~50 m.
Furthermore, while the BGA device has been described as an example of the semiconductor device 2, those skilled in the art will appreciate that the present invention is not limited to it.
As such, advantages that can be obtained by mounting an annular metal ring plated with gold or platinum of excellent conductivity or a ring having a contact pad with a large via hole formed thereon in a flexible PCB, on the top surface of the conductive silicon element in the existing integrated silicon contactor, will be described hereinafter with reference to FIG. 2a and FIG. 2b.
First, small force is needed when the socket board 12 is depressed since the insulating silicon element 6 that is soft is filled around the conductive silicon elements 8 of the contactor 20. Thus, the contactor is advantageously applied to a test system in which several semiconductor devices 2 are simultaneously depressed in order to accomplish an electrical contact unlike the existing electrical contact pad.
Second, when the semiconductor device 2 is tested, respective conductive silicon elements 8 are independently depressed to easily cope with flatness of the peripheral devices. Owing to this, the characteristics of the device can be improved. Third, the conductive silicon element 8 within the annular metal ring of conductive material mounted on the top surface thereof is not spread out and its displacement is minimized, when it is depressed by the ball lead 4 of the device 2. Accordingly, the life span of the contactor 20 can be lengthened. As described above, the ring type contactor pad of the present invention has new effects in that it can be advantageously applied to a test system in which several semiconductor devices are simultaneously depressed in order to accomplish an electrical contact unlike the existing electrical contact pad, and can improve the characteristics of the devices since respective conductive silicon elements are independently depressed to easily cope with flatness of the peripheral devices. Furthermore, the present invention has an advantageous effect in that it can extend the life span of the contactor since the conductive silicon element within the metal ring is not spread out and its displacement is minimized, when it is depressed by the ball lead of the semiconductor device. While the present invention has been described with reference to the particular illustrative embodiments, it is not to be restricted by the embodiments but only by the appended claims. It is to be appreciated that those skilled in the art can change or modify the embodiments without departing from the scope and spirit of the present invention.

Claims

What Is Claimed Is:
1. A ring type contactor pad of an integrated silicon contactor comprises: a conductive silicon element (8) located at a region which is in contact with a ball lead (4) of a ball grid array (BGA) semiconductor device (2); and an insulating silicon element (6) located at a region which is not in contact with the ball lead (4) of the semiconductor device (2) to support the conductive silicon element (8) and serving as an insulating layer, wherein a ring-shaped conductive material (7)is mounted on the top surface of the conductive silicon element (8) that electrically connects a contact pad (10) of a socket board (12) that performs a test on the semiconductor device (2) and the lead terminal (4) of the semiconductor device (2) to each other.
2. The ring type contactor pad as claimed in claim 1, wherein the conductive silicon element (8) is made in such a manner that silicon is mixed with a conductive powder.
3. The ring type contactor pad as claimed in claim 1 or 2, wherein the ring- shaped conductive material (7) mounted on the top surface of the conductive silicon element (8) is an annular metal ring plated with gold (Au) or platinum (Pd).
4. The ring type contactor pad as claimed in claim 1 or 2, wherein the ring- shaped conductive material (7) mounted on the top surface of the conductive silicon element (8) is a ring formed by extending a via hole of a contact pad of a flexible PCB.
5. The ring type contactor pad as claimed in claim 1, wherein the bottom portion of the conductive silicon element (8) is protruded from the bottom portion of the insulating silicon element (6) in such a manner that the conductive silicon element (8) is vertically longer than the insulating silicon element (6).
PCT/KR2003/000610 2002-04-01 2003-03-27 Ring type contactor pad of integrated silicone contactor WO2003083493A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003218803A AU2003218803A1 (en) 2002-04-01 2003-03-27 Ring type contactor pad of integrated silicone contactor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2020020009689U KR200278989Y1 (en) 2002-04-01 2002-04-01 Ring type contactor pad of integrated silicone contactor
KR20-2002-0009689 2002-04-01

Publications (1)

Publication Number Publication Date
WO2003083493A1 true WO2003083493A1 (en) 2003-10-09

Family

ID=32291597

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2003/000610 WO2003083493A1 (en) 2002-04-01 2003-03-27 Ring type contactor pad of integrated silicone contactor

Country Status (3)

Country Link
KR (1) KR200278989Y1 (en)
AU (1) AU2003218803A1 (en)
WO (1) WO2003083493A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101882720B (en) 2003-06-12 2011-11-30 Jsr株式会社 Anisotropc conductive connector device and production method therefor and circuit device inspection device
KR20060062824A (en) 2004-12-06 2006-06-12 주식회사 아이에스시테크놀러지 Silicone connector for testing semiconductor package

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5518410A (en) * 1993-05-24 1996-05-21 Enplas Corporation Contact pin device for IC sockets
US5663594A (en) * 1994-11-22 1997-09-02 Nec Corporation Ball grid array type of semiconductor device
US5883440A (en) * 1996-09-30 1999-03-16 Sony Corporation Outline forming method for semiconductor device and semiconductor manufacturing device used in this method
JP2000058711A (en) * 1998-07-31 2000-02-25 ▲シィ▼品精密工業股▲分▼有限公司 Semiconductor package with bga structure of csp
KR20020011287A (en) * 2000-08-01 2002-02-08 이재혁 Semiconductor Probe Module Using Semiconductor Probe Chip and Fabricating Method thereof, and Probe Station Using the Same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5518410A (en) * 1993-05-24 1996-05-21 Enplas Corporation Contact pin device for IC sockets
US5663594A (en) * 1994-11-22 1997-09-02 Nec Corporation Ball grid array type of semiconductor device
US5883440A (en) * 1996-09-30 1999-03-16 Sony Corporation Outline forming method for semiconductor device and semiconductor manufacturing device used in this method
JP2000058711A (en) * 1998-07-31 2000-02-25 ▲シィ▼品精密工業股▲分▼有限公司 Semiconductor package with bga structure of csp
KR20020011287A (en) * 2000-08-01 2002-02-08 이재혁 Semiconductor Probe Module Using Semiconductor Probe Chip and Fabricating Method thereof, and Probe Station Using the Same

Also Published As

Publication number Publication date
AU2003218803A1 (en) 2003-10-13
KR200278989Y1 (en) 2002-06-20

Similar Documents

Publication Publication Date Title
KR970067800A (en) Semiconductor device
KR200312740Y1 (en) Integrated silicone contactor with an electric spring
WO2005065424A3 (en) Micro pin grid array with wiping action
US6942493B2 (en) Connector structure for connecting electronic parts
JP2901603B1 (en) Electronic component conductive sheet
KR200312739Y1 (en) Integrated silicone contactor with an electric conductor
JPS63316449A (en) Method and apparatus for testing integrated circuit
JPH11354676A (en) Printed wiring board and semiconductor device
WO2003083493A1 (en) Ring type contactor pad of integrated silicone contactor
KR200368243Y1 (en) Integrated silicone contactor with conduction reinforcing layer
KR970053678A (en) Semiconductor package
KR960035997A (en) Semiconductor package and manufacturing method
WO1999021227A1 (en) Connector assembly for accommodating bga-style components
US6392145B1 (en) Semiconductor device including and integrated circuit housed in an array package having signal terminals arranged about centrally located power supply terminals
JP2002270320A (en) Socket for semiconductor package
WO2002067322A3 (en) Semiconductor device having signal contacts and high current power contacts
US6630839B1 (en) Contactor, a method of manufacturing the contactor and a device and method of testing electronic component using the contactor
KR200278785Y1 (en) Inverse-trapezoid type contactor pad of integrated silicone contactor
KR200374262Y1 (en) Socket board assembly for semiconductor device test
JPH10256319A (en) Semiconductor device
JPH11176545A (en) Bga socket adapter
US8045331B2 (en) Printed circuit board, method of fabricating the same, and electronic apparatus employing the same
KR200372268Y1 (en) Integrated silicone contactor with interposer board
KR100808579B1 (en) Mounting structure of semiconductor package using ball mask tape
US9788425B2 (en) Electronic package assembly

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP