WO2004008495A3 - Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses - Google Patents

Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses Download PDF

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Publication number
WO2004008495A3
WO2004008495A3 PCT/US2003/021895 US0321895W WO2004008495A3 WO 2004008495 A3 WO2004008495 A3 WO 2004008495A3 US 0321895 W US0321895 W US 0321895W WO 2004008495 A3 WO2004008495 A3 WO 2004008495A3
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WO
WIPO (PCT)
Prior art keywords
cap layer
mask
recess
contacts
nitride
Prior art date
Application number
PCT/US2003/021895
Other languages
French (fr)
Other versions
WO2004008495A2 (en
Inventor
Adam William Saxler
Richard Peter Smith
Scott T Sheppard
Original Assignee
Cree Inc
Adam William Saxler
Richard Peter Smith
Scott T Sheppard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc, Adam William Saxler, Richard Peter Smith, Scott T Sheppard filed Critical Cree Inc
Priority to EP03764586.8A priority Critical patent/EP1522091B1/en
Priority to AU2003256520A priority patent/AU2003256520A1/en
Priority to JP2004521759A priority patent/JP4990496B2/en
Publication of WO2004008495A2 publication Critical patent/WO2004008495A2/en
Publication of WO2004008495A3 publication Critical patent/WO2004008495A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Abstract

Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes fabricating a first cap layer comprising a Group III-nitride semiconductor material. A mask is fabricated and patterned on the first cap layer. The pattern of the mask corresponds to the pattern of the recesses for the contacts. A second cap layer comprising a Group III-nitride semiconductor material is selectively fabricated (e.g. grown) on the first cap layer utilizing the patterned mask. Additional layers may also be formed on the second cap layer. The mask may be removed to provide recess(es) to the first cap layer, and contact(s) may be formed in the recess(es). Alternatively, the mask may comprise a conductive material upon which a contact may be formed, and may not require removal.
PCT/US2003/021895 2002-07-16 2003-07-15 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses WO2004008495A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03764586.8A EP1522091B1 (en) 2002-07-16 2003-07-15 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
AU2003256520A AU2003256520A1 (en) 2002-07-16 2003-07-15 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
JP2004521759A JP4990496B2 (en) 2002-07-16 2003-07-15 Nitride-based transistor and method of manufacturing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US39623602P 2002-07-16 2002-07-16
US60/396,236 2002-07-16
US10/617,843 US6982204B2 (en) 2002-07-16 2003-07-11 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US10/617,843 2003-07-11

Publications (2)

Publication Number Publication Date
WO2004008495A2 WO2004008495A2 (en) 2004-01-22
WO2004008495A3 true WO2004008495A3 (en) 2004-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/021895 WO2004008495A2 (en) 2002-07-16 2003-07-15 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses

Country Status (6)

Country Link
US (2) US6982204B2 (en)
EP (1) EP1522091B1 (en)
JP (1) JP4990496B2 (en)
AU (1) AU2003256520A1 (en)
TW (1) TWI310611B (en)
WO (1) WO2004008495A2 (en)

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US9224596B2 (en) 2005-04-11 2015-12-29 Cree, Inc. Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers
US9331192B2 (en) 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same

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