WO2004013371A3 - Method and apparatus for plasma implantation without deposition of a layer of byproduct - Google Patents

Method and apparatus for plasma implantation without deposition of a layer of byproduct Download PDF

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Publication number
WO2004013371A3
WO2004013371A3 PCT/US2003/024158 US0324158W WO2004013371A3 WO 2004013371 A3 WO2004013371 A3 WO 2004013371A3 US 0324158 W US0324158 W US 0324158W WO 2004013371 A3 WO2004013371 A3 WO 2004013371A3
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
gas ions
surface layer
dilution gas
dopant gas
Prior art date
Application number
PCT/US2003/024158
Other languages
French (fr)
Other versions
WO2004013371A2 (en
Inventor
Steven R Walther
Svetlana B Radovanov
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Priority to JP2004526318A priority Critical patent/JP2005535131A/en
Priority to EP03759186A priority patent/EP1525333A2/en
Publication of WO2004013371A2 publication Critical patent/WO2004013371A2/en
Publication of WO2004013371A3 publication Critical patent/WO2004013371A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412Plasma immersion ion implantation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0057Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/082Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/083Compounds containing nitrogen and non-metals and optionally metals containing one or more halogen atoms
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0063Reactive sputtering characterised by means for introducing or removing gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0068Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48Ion implantation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Abstract

A method for limiting the formation of a deposited surface layer on a workpiece, such as a semiconductor wafer, during plasma implantation includes introducing a dopant gas and a dilution gas into a plasma doping chamber for ionization to form dopant gas ions and dilution gas ions, and accelerating the dopant gas ions and the dilution gas ions toward the workpiece. The dopant gas ions are implanted into the workpiece, and the dilution gas ions remove a deposited surface layer from the workpiece. The atomic masses of the dopant gas and the dilution gas may be similar to achieve efficient removal of the deposited surface layer.
PCT/US2003/024158 2002-08-02 2003-08-01 Method and apparatus for plasma implantation without deposition of a layer of byproduct WO2004013371A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004526318A JP2005535131A (en) 2002-08-02 2003-08-01 Removal of plasma deposited surface layer by sputtering of dilution gas
EP03759186A EP1525333A2 (en) 2002-08-02 2003-08-01 Method and apparatus for plasma implantation without deposition of a layer of byproduct

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40056002P 2002-08-02 2002-08-02
US60/400,560 2002-08-02

Publications (2)

Publication Number Publication Date
WO2004013371A2 WO2004013371A2 (en) 2004-02-12
WO2004013371A3 true WO2004013371A3 (en) 2004-10-21

Family

ID=31495837

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/024158 WO2004013371A2 (en) 2002-08-02 2003-08-01 Method and apparatus for plasma implantation without deposition of a layer of byproduct

Country Status (5)

Country Link
EP (1) EP1525333A2 (en)
JP (1) JP2005535131A (en)
KR (1) KR20050034731A (en)
TW (1) TW200402769A (en)
WO (1) WO2004013371A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050287307A1 (en) * 2004-06-23 2005-12-29 Varian Semiconductor Equipment Associates, Inc. Etch and deposition control for plasma implantation
US20060040499A1 (en) * 2004-08-20 2006-02-23 Steve Walther In situ surface contaminant removal for ion implanting
EP1936656A1 (en) * 2006-12-21 2008-06-25 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Plasma generator and method for cleaning an object
US8679960B2 (en) 2009-10-14 2014-03-25 Varian Semiconductor Equipment Associates, Inc. Technique for processing a substrate having a non-planar surface
SG10201507319XA (en) * 2010-09-15 2015-10-29 Praxair Technology Inc Method for extending lifetime of an ion source
US9812291B2 (en) 2012-02-14 2017-11-07 Entegris, Inc. Alternate materials and mixtures to minimize phosphorus buildup in implant applications
KR101596466B1 (en) 2015-07-21 2016-02-22 농업회사법인 주식회사 아그로비즈 Method of producing a water-soluble granular fertilizer composition
US10460941B2 (en) * 2016-11-08 2019-10-29 Varian Semiconductor Equipment Associates, Inc. Plasma doping using a solid dopant source

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496843A (en) * 1981-06-01 1985-01-29 Tokyo Shibaura Denki Kabushiki Kaisha Method for producing metal ions
US5571576A (en) * 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
JPH0992804A (en) * 1995-09-25 1997-04-04 Nec Corp Manufacture of soi substrate and its manufacturing equipment
GB2336603A (en) * 1998-04-23 1999-10-27 Metaltech Limited A method and apparatus for plasma boronising
JPH11354068A (en) * 1997-11-28 1999-12-24 Seiko Epson Corp Ion implanting apparatus, ion implanting method, and manufacture of semiconductor device
EP1073087A2 (en) * 1999-07-22 2001-01-31 Nissin Electric Co., Ltd. Ion source
EP1156511A1 (en) * 2000-05-19 2001-11-21 Applied Materials, Inc. Remote plasma CVD apparatus
US20010042827A1 (en) * 1998-08-03 2001-11-22 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496843A (en) * 1981-06-01 1985-01-29 Tokyo Shibaura Denki Kabushiki Kaisha Method for producing metal ions
US5571576A (en) * 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
JPH0992804A (en) * 1995-09-25 1997-04-04 Nec Corp Manufacture of soi substrate and its manufacturing equipment
JPH11354068A (en) * 1997-11-28 1999-12-24 Seiko Epson Corp Ion implanting apparatus, ion implanting method, and manufacture of semiconductor device
GB2336603A (en) * 1998-04-23 1999-10-27 Metaltech Limited A method and apparatus for plasma boronising
US20010042827A1 (en) * 1998-08-03 2001-11-22 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
EP1073087A2 (en) * 1999-07-22 2001-01-31 Nissin Electric Co., Ltd. Ion source
EP1156511A1 (en) * 2000-05-19 2001-11-21 Applied Materials, Inc. Remote plasma CVD apparatus

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 08 29 August 1997 (1997-08-29) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 03 30 March 2000 (2000-03-30) *

Also Published As

Publication number Publication date
TW200402769A (en) 2004-02-16
EP1525333A2 (en) 2005-04-27
JP2005535131A (en) 2005-11-17
KR20050034731A (en) 2005-04-14
WO2004013371A2 (en) 2004-02-12

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