WO2004027884A1 - Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor - Google Patents
Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor Download PDFInfo
- Publication number
- WO2004027884A1 WO2004027884A1 PCT/US2003/027912 US0327912W WO2004027884A1 WO 2004027884 A1 WO2004027884 A1 WO 2004027884A1 US 0327912 W US0327912 W US 0327912W WO 2004027884 A1 WO2004027884 A1 WO 2004027884A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- face
- phosphor
- sidewall
- substrate
- led according
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Definitions
- the cost per lumen for an LED may be a function of the manufacturing cost per LED chip, the internal quantum efficiency of the LED material and the ability to couple or extract the generated light out of the device.
- An overview of light extraction issues may be found in the textbook entitled High Brightness Light Emitting Diodes to Stringfellow et al., Academic Press, 1997, and particularly Chapter 2, entitled Overview of Device Issues in High-Brightness Light Emitting Diodes, to Craford, at pp. 47-63.
- Embodiments of the invention now will be described, generally with reference to gallium nitride-based light emitting diodes on silicon carbide-based substrates.
- many embodiments of the invention may be employed with any combination of a substrate that is non-absorbing or transparent to the emitted light.
- the refractive index of the substrate is greater than that of the diode.
- the substrate 100 includes one or more sidewalls that include a first portion 100c that is adjacent the second face 100b and is orthogonal thereto, as shown by the 90° angle in Figure 1 A.
- a second portion lOOe, adjacent the first face 100a, is orthogonal thereto.
- a third portion lOOd between the first and second portions 100c and lOOe is oblique, making an angle of, for example, 30° with an extension of the second portion lOOe.
- Figure 1 A is not drawn to scale, dimensions for one embodiment are illustrated in Figure 1 A.
- the first face may be about 300 ⁇ m wide
- the second face may be about 200 ⁇ m wide.
- contact/bond pads may include titanium, platinum and gold layers. It has been found, according to some embodiments of the invention, that the loss in light output from a conventional contact may arise from the poor reflectivity of the titanium layer at the interface with the second face 200b. In sharp contrast, according to some embodiments of the invention, the ohmic layer comprising nickel between the second face 200b and the reflective layer 234 can be made very thin, for example between about 25A thick, in order to reduce losses.
- Other contact structures that may be employed are described in the aforementioned Application Serial No. 10/057,821.
Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020057004402A KR101182041B1 (en) | 2002-09-19 | 2003-09-08 | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
CN038221764A CN1682384B (en) | 2002-09-19 | 2003-09-08 | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
EP03797885A EP1540747B1 (en) | 2002-09-19 | 2003-09-08 | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
JP2004537733A JP2006500767A (en) | 2002-09-19 | 2003-09-08 | Light emitting diode and manufacturing method thereof |
CA002495149A CA2495149A1 (en) | 2002-09-19 | 2003-09-08 | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
AU2003276867A AU2003276867A1 (en) | 2002-09-19 | 2003-09-08 | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
AT03797885T ATE543221T1 (en) | 2002-09-19 | 2003-09-08 | FLUORESCENT COATED LIGHT ELEMENT DIODES WITH TAPERED SIDE WALLS AND PRODUCTION PROCESS THEREOF |
HK05107516.5A HK1075326A1 (en) | 2002-09-19 | 2005-08-26 | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41198002P | 2002-09-19 | 2002-09-19 | |
US60/411,980 | 2002-09-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004027884A1 true WO2004027884A1 (en) | 2004-04-01 |
Family
ID=32030772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/027912 WO2004027884A1 (en) | 2002-09-19 | 2003-09-08 | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
Country Status (12)
Country | Link |
---|---|
US (1) | US6853010B2 (en) |
EP (1) | EP1540747B1 (en) |
JP (1) | JP2006500767A (en) |
KR (2) | KR20110118848A (en) |
CN (1) | CN1682384B (en) |
AT (1) | ATE543221T1 (en) |
AU (1) | AU2003276867A1 (en) |
CA (1) | CA2495149A1 (en) |
HK (1) | HK1075326A1 (en) |
MY (1) | MY134719A (en) |
TW (1) | TWI319236B (en) |
WO (1) | WO2004027884A1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
KR20050057332A (en) | 2005-06-16 |
EP1540747A1 (en) | 2005-06-15 |
AU2003276867A1 (en) | 2004-04-08 |
CN1682384B (en) | 2010-06-09 |
JP2006500767A (en) | 2006-01-05 |
US20040056260A1 (en) | 2004-03-25 |
MY134719A (en) | 2007-12-31 |
TW200417056A (en) | 2004-09-01 |
HK1075326A1 (en) | 2005-12-09 |
ATE543221T1 (en) | 2012-02-15 |
EP1540747B1 (en) | 2012-01-25 |
CN1682384A (en) | 2005-10-12 |
KR101182041B1 (en) | 2012-09-11 |
US6853010B2 (en) | 2005-02-08 |
CA2495149A1 (en) | 2004-04-01 |
TWI319236B (en) | 2010-01-01 |
KR20110118848A (en) | 2011-11-01 |
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