WO2004029983A3 - Non-volatile memory and method of programming with reduced neighboring field errors - Google Patents

Non-volatile memory and method of programming with reduced neighboring field errors Download PDF

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Publication number
WO2004029983A3
WO2004029983A3 PCT/US2003/029045 US0329045W WO2004029983A3 WO 2004029983 A3 WO2004029983 A3 WO 2004029983A3 US 0329045 W US0329045 W US 0329045W WO 2004029983 A3 WO2004029983 A3 WO 2004029983A3
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WO
WIPO (PCT)
Prior art keywords
cells
memory
programming
volatile memory
fields
Prior art date
Application number
PCT/US2003/029045
Other languages
French (fr)
Other versions
WO2004029983A2 (en
Inventor
Raul-Adrian Cernea
Yan Li
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Priority to EP03749708A priority Critical patent/EP1543527B1/en
Priority to JP2004540088A priority patent/JP4988156B2/en
Priority to KR1020127006423A priority patent/KR101180644B1/en
Priority to AU2003267237A priority patent/AU2003267237A1/en
Priority to KR1020057005118A priority patent/KR101169344B1/en
Publication of WO2004029983A2 publication Critical patent/WO2004029983A2/en
Publication of WO2004029983A3 publication Critical patent/WO2004029983A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

Abstract

A memory device and a method thereof allow programming and sensing a plurality of memory cells in parallel in order to minimize errors caused by coupling from fields of neighboring cells and to improve performance. The memory device and method have the plurality of memory cells linked by the same word line and a read/write circuit is coupled to each memory cells in a contiguous manner. Thus, a memory cell and its neighbors are programmed together and the field environment for each memory cell relative to its neighbors during programming and subsequent reading is less varying. This improves performance and reduces errors caused by coupling from fields of neighboring cells, as compared to conventional architectures and methods in which cells on even columns are programmed independently of cells in odd columns.
PCT/US2003/029045 2002-09-24 2003-09-18 Non-volatile memory and method of programming with reduced neighboring field errors WO2004029983A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP03749708A EP1543527B1 (en) 2002-09-24 2003-09-18 Non-volatile memory and method of programming with reduced neighbouring field errors
JP2004540088A JP4988156B2 (en) 2002-09-24 2003-09-18 Nonvolatile memory and method with reduced adjacent field errors
KR1020127006423A KR101180644B1 (en) 2002-09-24 2003-09-18 Non-volatile memory and method of programming with reduced neighboring field errors
AU2003267237A AU2003267237A1 (en) 2002-09-24 2003-09-18 Non-volatile memory and method of programming with reduced neighboring field errors
KR1020057005118A KR101169344B1 (en) 2002-09-24 2003-09-18 Non-volatile memory and method of programming with reduced neighboring field errors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/254,290 2002-09-24
US10/254,290 US6987693B2 (en) 2002-09-24 2002-09-24 Non-volatile memory and method with reduced neighboring field errors

Publications (2)

Publication Number Publication Date
WO2004029983A2 WO2004029983A2 (en) 2004-04-08
WO2004029983A3 true WO2004029983A3 (en) 2004-11-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/029045 WO2004029983A2 (en) 2002-09-24 2003-09-18 Non-volatile memory and method of programming with reduced neighboring field errors

Country Status (8)

Country Link
US (5) US6987693B2 (en)
EP (1) EP1543527B1 (en)
JP (1) JP4988156B2 (en)
KR (2) KR101180644B1 (en)
CN (1) CN100590741C (en)
AU (1) AU2003267237A1 (en)
TW (1) TWI318405B (en)
WO (1) WO2004029983A2 (en)

Families Citing this family (320)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6987693B2 (en) 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US7046568B2 (en) 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US7443757B2 (en) * 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7327619B2 (en) * 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US7324393B2 (en) * 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
US6880144B2 (en) * 2003-02-04 2005-04-12 Sun Microsystems, Inc. High speed low power bitline
US7064980B2 (en) * 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US6956770B2 (en) 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7020017B2 (en) * 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US7212435B2 (en) * 2004-06-30 2007-05-01 Micron Technology, Inc. Minimizing adjacent wordline disturb in a memory device
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US7173854B2 (en) * 2005-04-01 2007-02-06 Sandisk Corporation Non-volatile memory and method with compensation for source line bias errors
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7447078B2 (en) 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
TWI410974B (en) * 2005-04-01 2013-10-01 Sandisk Technologies Inc Multi-state memory having data recovery after program fail
US7206230B2 (en) * 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7170784B2 (en) * 2005-04-01 2007-01-30 Sandisk Corporation Non-volatile memory and method with control gate compensation for source line bias errors
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
US7196946B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
US7196928B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US7289363B2 (en) * 2005-05-19 2007-10-30 Micron Technology, Inc. Memory cell repair using fuse programming method in a flash memory device
US7193898B2 (en) * 2005-06-20 2007-03-20 Sandisk Corporation Compensation currents in non-volatile memory read operations
US7301817B2 (en) * 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7349258B2 (en) * 2005-12-06 2008-03-25 Sandisk Corporation Reducing read disturb for non-volatile storage
US7262994B2 (en) * 2005-12-06 2007-08-28 Sandisk Corporation System for reducing read disturb for non-volatile storage
US7349260B2 (en) 2005-12-29 2008-03-25 Sandisk Corporation Alternate row-based reading and writing for non-volatile memory
US7443726B2 (en) * 2005-12-29 2008-10-28 Sandisk Corporation Systems for alternate row-based reading and writing for non-volatile memory
KR100666223B1 (en) * 2006-02-22 2007-01-09 삼성전자주식회사 Three-level nonvolatile semiconductor memory device for decreasing noise between memory cells and operating method therefor
US7408810B2 (en) * 2006-02-22 2008-08-05 Micron Technology, Inc. Minimizing effects of program disturb in a memory device
US7499319B2 (en) * 2006-03-03 2009-03-03 Sandisk Corporation Read operation for non-volatile storage with compensation for coupling
US7436733B2 (en) * 2006-03-03 2008-10-14 Sandisk Corporation System for performing read operation on non-volatile storage with compensation for coupling
US7561469B2 (en) * 2006-03-28 2009-07-14 Micron Technology, Inc. Programming method to reduce word line to word line breakdown for NAND flash
US7440321B2 (en) * 2006-04-12 2008-10-21 Micron Technology, Inc. Multiple select gate architecture with select gates of different lengths
KR101375955B1 (en) 2006-05-12 2014-03-18 애플 인크. Distortion estimation and cancellation in memory devices
WO2007132452A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
KR101202537B1 (en) * 2006-05-12 2012-11-19 애플 인크. Combined distortion estimation and error correction coding for memory devices
US8239735B2 (en) * 2006-05-12 2012-08-07 Apple Inc. Memory Device with adaptive capacity
US7457163B2 (en) 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US7440331B2 (en) 2006-06-01 2008-10-21 Sandisk Corporation Verify operation for non-volatile storage using different voltages
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage
US7450421B2 (en) * 2006-06-02 2008-11-11 Sandisk Corporation Data pattern sensitivity compensation using different voltage
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
US7400535B2 (en) * 2006-07-20 2008-07-15 Sandisk Corporation System that compensates for coupling during programming
US7495953B2 (en) * 2006-07-20 2009-02-24 Sandisk Corporation System for configuring compensation
US7443729B2 (en) * 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
US7522454B2 (en) * 2006-07-20 2009-04-21 Sandisk Corporation Compensating for coupling based on sensing a neighbor using coupling
US7885119B2 (en) 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
WO2008011441A2 (en) * 2006-07-20 2008-01-24 Sandisk Corporation Method for configuring compensation for coupling between adjacent storage elements in a nonvolatile memory
US7506113B2 (en) * 2006-07-20 2009-03-17 Sandisk Corporation Method for configuring compensation
US7471565B2 (en) 2006-08-22 2008-12-30 Micron Technology, Inc. Reducing effects of program disturb in a memory device
WO2008026203A2 (en) * 2006-08-27 2008-03-06 Anobit Technologies Estimation of non-linear distortion in memory devices
KR100822560B1 (en) * 2006-09-04 2008-04-16 주식회사 하이닉스반도체 Circuit of measuring current for nand flash memory
US7599223B2 (en) * 2006-09-12 2009-10-06 Sandisk Corporation Non-volatile memory with linear estimation of initial programming voltage
US7453731B2 (en) * 2006-09-12 2008-11-18 Sandisk Corporation Method for non-volatile memory with linear estimation of initial programming voltage
US7606077B2 (en) * 2006-09-12 2009-10-20 Sandisk Corporation Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage
US7606091B2 (en) * 2006-09-12 2009-10-20 Sandisk Corporation Method for non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage
KR100879387B1 (en) * 2006-09-22 2009-01-20 삼성전자주식회사 Flash memory device and program method thereof
US7881121B2 (en) * 2006-09-25 2011-02-01 Macronix International Co., Ltd. Decoding method in an NROM flash memory array
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
KR100773742B1 (en) * 2006-09-30 2007-11-09 삼성전자주식회사 Non-volatile memory device and method for reducing effects of coupling between store elements
KR100773400B1 (en) 2006-10-26 2007-11-05 삼성전자주식회사 Multi-bit flash memory device
CN101601094B (en) 2006-10-30 2013-03-27 苹果公司 Reading memory cells using multiple thresholds
US7975192B2 (en) 2006-10-30 2011-07-05 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) * 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) * 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US7616506B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
WO2008083132A2 (en) * 2006-12-28 2008-07-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616505B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7590002B2 (en) * 2006-12-29 2009-09-15 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7616498B2 (en) * 2006-12-29 2009-11-10 Sandisk Corporation Non-volatile storage system with resistance sensing and compensation
US7518923B2 (en) * 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7440324B2 (en) * 2006-12-29 2008-10-21 Sandisk Corporation Apparatus with alternating read mode
US7495962B2 (en) * 2006-12-29 2009-02-24 Sandisk Corporation Alternating read mode
US7450430B2 (en) * 2006-12-29 2008-11-11 Sandisk Corporation Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
US7619919B2 (en) * 2007-01-12 2009-11-17 Marvell World Trade Ltd. Multi-level memory
US7751240B2 (en) * 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8151166B2 (en) * 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7633797B2 (en) * 2007-01-25 2009-12-15 Macronix International Co., Ltd. Flash memory and method for determining logic states thereof
US8369141B2 (en) * 2007-03-12 2013-02-05 Apple Inc. Adaptive estimation of memory cell read thresholds
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
US8001320B2 (en) * 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US7606079B2 (en) * 2007-04-25 2009-10-20 Sandisk Corporation Reducing power consumption during read operations in non-volatile storage
US7440327B1 (en) 2007-04-25 2008-10-21 Sandisk Corporation Non-volatile storage with reduced power consumption during read operations
US8234545B2 (en) * 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US8429493B2 (en) 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
KR100892583B1 (en) * 2007-06-08 2009-04-08 삼성전자주식회사 Apparatus for programming a data of memory cell considering floating poly coupling and method using the same
CN101796590B (en) * 2007-06-29 2013-01-30 桑迪士克科技股份有限公司 Non-volatile storage with source bias all bit line sensing
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
KR101274205B1 (en) * 2007-07-13 2013-06-14 삼성전자주식회사 Method of operating a non-volatile memory device
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7551477B2 (en) * 2007-09-26 2009-06-23 Sandisk Corporation Multiple bit line voltages based on distance
US8045373B2 (en) * 2007-10-02 2011-10-25 Cypress Semiconductor Corporation Method and apparatus for programming memory cell array
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8068360B2 (en) * 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
WO2009050703A2 (en) * 2007-10-19 2009-04-23 Anobit Technologies Data storage in analog memory cell arrays having erase failures
WO2009063450A2 (en) * 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US7633798B2 (en) * 2007-11-21 2009-12-15 Micron Technology, Inc. M+N bit programming and M+L bit read for M bit memory cells
US8499229B2 (en) 2007-11-21 2013-07-30 Micro Technology, Inc. Method and apparatus for reading data from flash memory
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) * 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US7701761B2 (en) * 2007-12-20 2010-04-20 Sandisk Corporation Read, verify word line reference voltage to track source level
US7764547B2 (en) * 2007-12-20 2010-07-27 Sandisk Corporation Regulation of source potential to combat cell source IR drop
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
JP5127439B2 (en) * 2007-12-28 2013-01-23 株式会社東芝 Semiconductor memory device
US8156398B2 (en) * 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) * 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) * 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US7733705B2 (en) 2008-03-13 2010-06-08 Micron Technology, Inc. Reduction of punch-through disturb during programming of a memory device
US8059457B2 (en) * 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
JP4635068B2 (en) * 2008-03-25 2011-02-16 株式会社東芝 Semiconductor memory device
WO2009152037A2 (en) * 2008-06-12 2009-12-17 Sandisk Corporation Nonvolatile memory and method for correlated multiple pass programming
US7848144B2 (en) 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
EP2308049B1 (en) * 2008-07-28 2012-05-09 Nxp B.V. Current sense amplifier with feedback loop
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8498151B1 (en) 2008-08-05 2013-07-30 Apple Inc. Data storage in analog memory cells using modified pass voltages
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8130556B2 (en) 2008-10-30 2012-03-06 Sandisk Technologies Inc. Pair bit line programming to improve boost voltage clamping
US8713330B1 (en) 2008-10-30 2014-04-29 Apple Inc. Data scrambling in memory devices
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US7764544B2 (en) * 2008-11-25 2010-07-27 Sandisk Corporation All-bit-line erase verify and soft program verify
US8248831B2 (en) * 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8174857B1 (en) 2008-12-31 2012-05-08 Anobit Technologies Ltd. Efficient readout schemes for analog memory cell devices using multiple read threshold sets
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8516408B2 (en) * 2009-05-26 2013-08-20 Lsi Corporation Optimization of circuits having repeatable circuit instances
US8935589B2 (en) * 2009-06-02 2015-01-13 Silicon Motion, Inc. Controller and data access method for flash memories
TWI415130B (en) * 2009-06-02 2013-11-11 Silicon Motion Inc Flash memory controller and method for accessing a flash memory
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8130544B2 (en) * 2009-08-17 2012-03-06 Skymedi Corporation Method of reducing bit error rate for a flash memory
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8218381B2 (en) * 2009-11-24 2012-07-10 Sandisk Technologies Inc. Programming memory with sensing-based bit line compensation to reduce channel-to-floating gate coupling
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8677203B1 (en) 2010-01-11 2014-03-18 Apple Inc. Redundant data storage schemes for multi-die memory systems
US8116139B2 (en) * 2010-01-29 2012-02-14 Sandisk Technologies Inc. Bit line stability detection
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
JP2011258289A (en) * 2010-06-10 2011-12-22 Toshiba Corp Method for detecting threshold value of memory cell
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US8369156B2 (en) 2010-07-13 2013-02-05 Sandisk Technologies Inc. Fast random access to non-volatile storage
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8645794B1 (en) 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US8385132B2 (en) 2010-12-22 2013-02-26 Sandisk Technologies Inc. Alternate bit line bias during programming to reduce channel to floating gate coupling in memory
US8743615B2 (en) 2011-08-22 2014-06-03 Sandisk Technologies Inc. Read compensation for partially programmed blocks of non-volatile storage
KR20130034919A (en) * 2011-09-29 2013-04-08 에스케이하이닉스 주식회사 Semiconductor device and operation method thereof
US8891297B2 (en) 2011-11-01 2014-11-18 Micron Technology, Inc. Memory cell sensing
US9171631B2 (en) 2012-04-23 2015-10-27 Kabushiki Kaisha Toshiba Semiconductor memory device and method for controlling the same
US9001577B2 (en) 2012-06-01 2015-04-07 Micron Technology, Inc. Memory cell sensing
US9158667B2 (en) 2013-03-04 2015-10-13 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9177663B2 (en) 2013-07-18 2015-11-03 Sandisk Technologies Inc. Dynamic regulation of memory array source line
US8964496B2 (en) 2013-07-26 2015-02-24 Micron Technology, Inc. Apparatuses and methods for performing compare operations using sensing circuitry
US8971124B1 (en) 2013-08-08 2015-03-03 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9153305B2 (en) 2013-08-30 2015-10-06 Micron Technology, Inc. Independently addressable memory array address spaces
US9019785B2 (en) 2013-09-19 2015-04-28 Micron Technology, Inc. Data shifting via a number of isolation devices
US9449675B2 (en) 2013-10-31 2016-09-20 Micron Technology, Inc. Apparatuses and methods for identifying an extremum value stored in an array of memory cells
US9430191B2 (en) 2013-11-08 2016-08-30 Micron Technology, Inc. Division operations for memory
US9368224B2 (en) 2014-02-07 2016-06-14 SanDisk Technologies, Inc. Self-adjusting regulation current for memory array source line
US9934856B2 (en) 2014-03-31 2018-04-03 Micron Technology, Inc. Apparatuses and methods for comparing data patterns in memory
WO2015162445A1 (en) 2014-04-25 2015-10-29 Arcelormittal Investigación Y Desarrollo Sl Method and device for preparing aluminium-coated steel sheets intended for being welded and then hardened under a press; corresponding welded blank
US9910787B2 (en) 2014-06-05 2018-03-06 Micron Technology, Inc. Virtual address table
US9455020B2 (en) 2014-06-05 2016-09-27 Micron Technology, Inc. Apparatuses and methods for performing an exclusive or operation using sensing circuitry
US9496023B2 (en) 2014-06-05 2016-11-15 Micron Technology, Inc. Comparison operations on logical representations of values in memory
US9711207B2 (en) 2014-06-05 2017-07-18 Micron Technology, Inc. Performing logical operations using sensing circuitry
US9830999B2 (en) 2014-06-05 2017-11-28 Micron Technology, Inc. Comparison operations in memory
US9779019B2 (en) 2014-06-05 2017-10-03 Micron Technology, Inc. Data storage layout
US9704540B2 (en) 2014-06-05 2017-07-11 Micron Technology, Inc. Apparatuses and methods for parity determination using sensing circuitry
US9786335B2 (en) 2014-06-05 2017-10-10 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9711206B2 (en) 2014-06-05 2017-07-18 Micron Technology, Inc. Performing logical operations using sensing circuitry
US9449674B2 (en) 2014-06-05 2016-09-20 Micron Technology, Inc. Performing logical operations using sensing circuitry
US10074407B2 (en) 2014-06-05 2018-09-11 Micron Technology, Inc. Apparatuses and methods for performing invert operations using sensing circuitry
US9747961B2 (en) 2014-09-03 2017-08-29 Micron Technology, Inc. Division operations in memory
US9847110B2 (en) 2014-09-03 2017-12-19 Micron Technology, Inc. Apparatuses and methods for storing a data value in multiple columns of an array corresponding to digits of a vector
US9898252B2 (en) 2014-09-03 2018-02-20 Micron Technology, Inc. Multiplication operations in memory
US9904515B2 (en) 2014-09-03 2018-02-27 Micron Technology, Inc. Multiplication operations in memory
US9740607B2 (en) 2014-09-03 2017-08-22 Micron Technology, Inc. Swap operations in memory
US10068652B2 (en) 2014-09-03 2018-09-04 Micron Technology, Inc. Apparatuses and methods for determining population count
US9589602B2 (en) 2014-09-03 2017-03-07 Micron Technology, Inc. Comparison operations in memory
US9940026B2 (en) 2014-10-03 2018-04-10 Micron Technology, Inc. Multidimensional contiguous memory allocation
US9836218B2 (en) 2014-10-03 2017-12-05 Micron Technology, Inc. Computing reduction and prefix sum operations in memory
US9576673B2 (en) * 2014-10-07 2017-02-21 Sandisk Technologies Llc Sensing multiple reference levels in non-volatile storage elements
US10163467B2 (en) 2014-10-16 2018-12-25 Micron Technology, Inc. Multiple endianness compatibility
US10147480B2 (en) 2014-10-24 2018-12-04 Micron Technology, Inc. Sort operation in memory
US9779784B2 (en) 2014-10-29 2017-10-03 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US10073635B2 (en) 2014-12-01 2018-09-11 Micron Technology, Inc. Multiple endianness compatibility
US9747960B2 (en) 2014-12-01 2017-08-29 Micron Technology, Inc. Apparatuses and methods for converting a mask to an index
US10032493B2 (en) 2015-01-07 2018-07-24 Micron Technology, Inc. Longest element length determination in memory
US10061590B2 (en) 2015-01-07 2018-08-28 Micron Technology, Inc. Generating and executing a control flow
US9583163B2 (en) 2015-02-03 2017-02-28 Micron Technology, Inc. Loop structure for operations in memory
CN107408405B (en) 2015-02-06 2021-03-05 美光科技公司 Apparatus and method for parallel writing to multiple memory device locations
WO2016126472A1 (en) 2015-02-06 2016-08-11 Micron Technology, Inc. Apparatuses and methods for scatter and gather
CN107408404B (en) 2015-02-06 2021-02-12 美光科技公司 Apparatus and methods for memory devices as storage of program instructions
CN107408408B (en) 2015-03-10 2021-03-05 美光科技公司 Apparatus and method for shift determination
US9741399B2 (en) 2015-03-11 2017-08-22 Micron Technology, Inc. Data shift by elements of a vector in memory
US9898253B2 (en) 2015-03-11 2018-02-20 Micron Technology, Inc. Division operations on variable length elements in memory
WO2016144726A1 (en) 2015-03-12 2016-09-15 Micron Technology, Inc. Apparatuses and methods for data movement
US10146537B2 (en) 2015-03-13 2018-12-04 Micron Technology, Inc. Vector population count determination in memory
US10049054B2 (en) 2015-04-01 2018-08-14 Micron Technology, Inc. Virtual register file
US10140104B2 (en) 2015-04-14 2018-11-27 Micron Technology, Inc. Target architecture determination
US9959923B2 (en) 2015-04-16 2018-05-01 Micron Technology, Inc. Apparatuses and methods to reverse data stored in memory
US10073786B2 (en) 2015-05-28 2018-09-11 Micron Technology, Inc. Apparatuses and methods for compute enabled cache
US9704541B2 (en) 2015-06-12 2017-07-11 Micron Technology, Inc. Simulating access lines
US9921777B2 (en) 2015-06-22 2018-03-20 Micron Technology, Inc. Apparatuses and methods for data transfer from sensing circuitry to a controller
US9996479B2 (en) 2015-08-17 2018-06-12 Micron Technology, Inc. Encryption of executables in computational memory
US9905276B2 (en) 2015-12-21 2018-02-27 Micron Technology, Inc. Control of sensing components in association with performing operations
US9952925B2 (en) 2016-01-06 2018-04-24 Micron Technology, Inc. Error code calculation on sensing circuitry
US10048888B2 (en) 2016-02-10 2018-08-14 Micron Technology, Inc. Apparatuses and methods for partitioned parallel data movement
US9892767B2 (en) 2016-02-12 2018-02-13 Micron Technology, Inc. Data gathering in memory
US9971541B2 (en) 2016-02-17 2018-05-15 Micron Technology, Inc. Apparatuses and methods for data movement
US9899070B2 (en) 2016-02-19 2018-02-20 Micron Technology, Inc. Modified decode for corner turn
US10956439B2 (en) 2016-02-19 2021-03-23 Micron Technology, Inc. Data transfer with a bit vector operation device
US9697876B1 (en) 2016-03-01 2017-07-04 Micron Technology, Inc. Vertical bit vector shift in memory
US9997232B2 (en) 2016-03-10 2018-06-12 Micron Technology, Inc. Processing in memory (PIM) capable memory device having sensing circuitry performing logic operations
US10262721B2 (en) 2016-03-10 2019-04-16 Micron Technology, Inc. Apparatuses and methods for cache invalidate
US10379772B2 (en) 2016-03-16 2019-08-13 Micron Technology, Inc. Apparatuses and methods for operations using compressed and decompressed data
US9910637B2 (en) 2016-03-17 2018-03-06 Micron Technology, Inc. Signed division in memory
US10388393B2 (en) 2016-03-22 2019-08-20 Micron Technology, Inc. Apparatus and methods for debugging on a host and memory device
US10120740B2 (en) 2016-03-22 2018-11-06 Micron Technology, Inc. Apparatus and methods for debugging on a memory device
US11074988B2 (en) 2016-03-22 2021-07-27 Micron Technology, Inc. Apparatus and methods for debugging on a host and memory device
US10977033B2 (en) 2016-03-25 2021-04-13 Micron Technology, Inc. Mask patterns generated in memory from seed vectors
US10474581B2 (en) 2016-03-25 2019-11-12 Micron Technology, Inc. Apparatuses and methods for cache operations
US10430244B2 (en) 2016-03-28 2019-10-01 Micron Technology, Inc. Apparatuses and methods to determine timing of operations
US10074416B2 (en) 2016-03-28 2018-09-11 Micron Technology, Inc. Apparatuses and methods for data movement
US10453502B2 (en) 2016-04-04 2019-10-22 Micron Technology, Inc. Memory bank power coordination including concurrently performing a memory operation in a selected number of memory regions
US10607665B2 (en) 2016-04-07 2020-03-31 Micron Technology, Inc. Span mask generation
US9818459B2 (en) 2016-04-19 2017-11-14 Micron Technology, Inc. Invert operations using sensing circuitry
US10153008B2 (en) 2016-04-20 2018-12-11 Micron Technology, Inc. Apparatuses and methods for performing corner turn operations using sensing circuitry
US9659605B1 (en) 2016-04-20 2017-05-23 Micron Technology, Inc. Apparatuses and methods for performing corner turn operations using sensing circuitry
US10042608B2 (en) 2016-05-11 2018-08-07 Micron Technology, Inc. Signed division in memory
US9659610B1 (en) 2016-05-18 2017-05-23 Micron Technology, Inc. Apparatuses and methods for shifting data
US10049707B2 (en) 2016-06-03 2018-08-14 Micron Technology, Inc. Shifting data
US10387046B2 (en) 2016-06-22 2019-08-20 Micron Technology, Inc. Bank to bank data transfer
US10037785B2 (en) 2016-07-08 2018-07-31 Micron Technology, Inc. Scan chain operation in sensing circuitry
US10388360B2 (en) 2016-07-19 2019-08-20 Micron Technology, Inc. Utilization of data stored in an edge section of an array
US10387299B2 (en) 2016-07-20 2019-08-20 Micron Technology, Inc. Apparatuses and methods for transferring data
US10733089B2 (en) 2016-07-20 2020-08-04 Micron Technology, Inc. Apparatuses and methods for write address tracking
US9972367B2 (en) 2016-07-21 2018-05-15 Micron Technology, Inc. Shifting data in sensing circuitry
US9767864B1 (en) 2016-07-21 2017-09-19 Micron Technology, Inc. Apparatuses and methods for storing a data value in a sensing circuitry element
US10303632B2 (en) 2016-07-26 2019-05-28 Micron Technology, Inc. Accessing status information
US10468087B2 (en) 2016-07-28 2019-11-05 Micron Technology, Inc. Apparatuses and methods for operations in a self-refresh state
US9990181B2 (en) 2016-08-03 2018-06-05 Micron Technology, Inc. Apparatuses and methods for random number generation
US11029951B2 (en) 2016-08-15 2021-06-08 Micron Technology, Inc. Smallest or largest value element determination
US10606587B2 (en) 2016-08-24 2020-03-31 Micron Technology, Inc. Apparatus and methods related to microcode instructions indicating instruction types
CN112863581A (en) * 2016-09-09 2021-05-28 硅存储技术公司 Sense amplifier with bit line precharge circuit for reading flash memory cells in an array
US10466928B2 (en) 2016-09-15 2019-11-05 Micron Technology, Inc. Updating a register in memory
US10387058B2 (en) 2016-09-29 2019-08-20 Micron Technology, Inc. Apparatuses and methods to change data category values
US10014034B2 (en) 2016-10-06 2018-07-03 Micron Technology, Inc. Shifting data in sensing circuitry
US10529409B2 (en) 2016-10-13 2020-01-07 Micron Technology, Inc. Apparatuses and methods to perform logical operations using sensing circuitry
US9805772B1 (en) 2016-10-20 2017-10-31 Micron Technology, Inc. Apparatuses and methods to selectively perform logical operations
CN207637499U (en) 2016-11-08 2018-07-20 美光科技公司 The equipment for being used to form the computation module above memory cell array
US10423353B2 (en) 2016-11-11 2019-09-24 Micron Technology, Inc. Apparatuses and methods for memory alignment
US9761300B1 (en) 2016-11-22 2017-09-12 Micron Technology, Inc. Data shift apparatuses and methods
US10402340B2 (en) 2017-02-21 2019-09-03 Micron Technology, Inc. Memory array page table walk
US10403352B2 (en) 2017-02-22 2019-09-03 Micron Technology, Inc. Apparatuses and methods for compute in data path
US10268389B2 (en) 2017-02-22 2019-04-23 Micron Technology, Inc. Apparatuses and methods for in-memory operations
US10838899B2 (en) 2017-03-21 2020-11-17 Micron Technology, Inc. Apparatuses and methods for in-memory data switching networks
US11222260B2 (en) 2017-03-22 2022-01-11 Micron Technology, Inc. Apparatuses and methods for operating neural networks
US10185674B2 (en) 2017-03-22 2019-01-22 Micron Technology, Inc. Apparatus and methods for in data path compute operations
US10049721B1 (en) 2017-03-27 2018-08-14 Micron Technology, Inc. Apparatuses and methods for in-memory operations
US10147467B2 (en) 2017-04-17 2018-12-04 Micron Technology, Inc. Element value comparison in memory
US10043570B1 (en) 2017-04-17 2018-08-07 Micron Technology, Inc. Signed element compare in memory
US9997212B1 (en) 2017-04-24 2018-06-12 Micron Technology, Inc. Accessing data in memory
US10942843B2 (en) 2017-04-25 2021-03-09 Micron Technology, Inc. Storing data elements of different lengths in respective adjacent rows or columns according to memory shapes
US10236038B2 (en) 2017-05-15 2019-03-19 Micron Technology, Inc. Bank to bank data transfer
US10068664B1 (en) 2017-05-19 2018-09-04 Micron Technology, Inc. Column repair in memory
US10013197B1 (en) 2017-06-01 2018-07-03 Micron Technology, Inc. Shift skip
US10152271B1 (en) 2017-06-07 2018-12-11 Micron Technology, Inc. Data replication
US10262701B2 (en) 2017-06-07 2019-04-16 Micron Technology, Inc. Data transfer between subarrays in memory
US10318168B2 (en) 2017-06-19 2019-06-11 Micron Technology, Inc. Apparatuses and methods for simultaneous in data path compute operations
US10162005B1 (en) 2017-08-09 2018-12-25 Micron Technology, Inc. Scan chain operations
US10534553B2 (en) 2017-08-30 2020-01-14 Micron Technology, Inc. Memory array accessibility
US10416927B2 (en) 2017-08-31 2019-09-17 Micron Technology, Inc. Processing in memory
US10741239B2 (en) 2017-08-31 2020-08-11 Micron Technology, Inc. Processing in memory device including a row address strobe manager
US10346092B2 (en) 2017-08-31 2019-07-09 Micron Technology, Inc. Apparatuses and methods for in-memory operations using timing circuitry
US10409739B2 (en) 2017-10-24 2019-09-10 Micron Technology, Inc. Command selection policy
US10522210B2 (en) 2017-12-14 2019-12-31 Micron Technology, Inc. Apparatuses and methods for subarray addressing
US10332586B1 (en) 2017-12-19 2019-06-25 Micron Technology, Inc. Apparatuses and methods for subrow addressing
US10614875B2 (en) 2018-01-30 2020-04-07 Micron Technology, Inc. Logical operations using memory cells
US10437557B2 (en) 2018-01-31 2019-10-08 Micron Technology, Inc. Determination of a match between data values stored by several arrays
US11194477B2 (en) 2018-01-31 2021-12-07 Micron Technology, Inc. Determination of a match between data values stored by three or more arrays
US10725696B2 (en) 2018-04-12 2020-07-28 Micron Technology, Inc. Command selection policy with read priority
US10440341B1 (en) 2018-06-07 2019-10-08 Micron Technology, Inc. Image processor formed in an array of memory cells
US11175915B2 (en) 2018-10-10 2021-11-16 Micron Technology, Inc. Vector registers implemented in memory
US10769071B2 (en) 2018-10-10 2020-09-08 Micron Technology, Inc. Coherent memory access
US10483978B1 (en) 2018-10-16 2019-11-19 Micron Technology, Inc. Memory device processing
US11184446B2 (en) 2018-12-05 2021-11-23 Micron Technology, Inc. Methods and apparatus for incentivizing participation in fog networks
US10867655B1 (en) 2019-07-08 2020-12-15 Micron Technology, Inc. Methods and apparatus for dynamically adjusting performance of partitioned memory
US11360768B2 (en) 2019-08-14 2022-06-14 Micron Technolgy, Inc. Bit string operations in memory
US11449577B2 (en) 2019-11-20 2022-09-20 Micron Technology, Inc. Methods and apparatus for performing video processing matrix operations within a memory array
US11853385B2 (en) 2019-12-05 2023-12-26 Micron Technology, Inc. Methods and apparatus for performing diversity matrix operations within a memory array
US11227641B1 (en) 2020-07-21 2022-01-18 Micron Technology, Inc. Arithmetic operations in memory
CN112365913B (en) * 2020-09-29 2021-09-03 中天弘宇集成电路有限责任公司 3D NAND flash memory programming method
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6046940A (en) * 1994-06-29 2000-04-04 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US20020118574A1 (en) * 2001-02-26 2002-08-29 Geoffrey Gongwer Non-volatile memory with improved programming and method therefor

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224062B (en) 1979-09-28 1990-09-26 Ates Componenti Elettron PROGRAMMING METHOD FOR AN ELECTRICALLY ALTERABLE NON-VOLATILE SEMICONDUCTOR MEMORY
US4785427A (en) * 1987-01-28 1988-11-15 Cypress Semiconductor Corporation Differential bit line clamp
US5093806A (en) * 1988-02-16 1992-03-03 Tran Hiep V Sensing and decoding scheme for a bicmos read/write memory
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5070032A (en) 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
EP0617363B1 (en) 1989-04-13 2000-01-26 SanDisk Corporation Defective cell substitution in EEprom array
JP2646850B2 (en) * 1990-11-30 1997-08-27 日本電気株式会社 Semiconductor memory circuit
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
KR960000619B1 (en) * 1991-12-27 1996-01-10 후지쓰 가부시끼가이샤 Flash non-volatile semiconductor memory device and driving control circuit thereof
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
JP3252306B2 (en) * 1993-08-10 2002-02-04 株式会社日立製作所 Semiconductor nonvolatile storage device
KR0169267B1 (en) 1993-09-21 1999-02-01 사토 후미오 Nonvolatile semiconductor memory device
US5574880A (en) * 1994-03-11 1996-11-12 Intel Corporation Mechanism for performing wrap-around reads during split-wordline reads
US5661053A (en) 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
JPH08147965A (en) * 1994-11-15 1996-06-07 Toshiba Corp Semiconductor storage
JP3941149B2 (en) 1996-12-03 2007-07-04 ソニー株式会社 Semiconductor nonvolatile memory device
JPH09245493A (en) * 1996-03-07 1997-09-19 Hitachi Ltd Non-volatile semiconductor memory
JP3200006B2 (en) * 1996-03-18 2001-08-20 株式会社東芝 Nonvolatile semiconductor memory device
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5860082A (en) * 1996-03-28 1999-01-12 Datalight, Inc. Method and apparatus for allocating storage in a flash memory
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6062270A (en) * 1997-01-27 2000-05-16 Lindab Ab Double-walled structure in a ventilation duct system
US6097638A (en) 1997-02-12 2000-08-01 Kabushiki Kaisha Toshiba Semiconductor memory device
JP3615009B2 (en) * 1997-02-12 2005-01-26 株式会社東芝 Semiconductor memory device
KR100272037B1 (en) * 1997-02-27 2000-12-01 니시무로 타이죠 Non volatile simiconductor memory
US5872739A (en) * 1997-04-17 1999-02-16 Radiant Technologies Sense amplifier for low read-voltage memory cells
JP3592887B2 (en) * 1997-04-30 2004-11-24 株式会社東芝 Nonvolatile semiconductor memory device
JP3557078B2 (en) * 1997-06-27 2004-08-25 株式会社東芝 Nonvolatile semiconductor memory device
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6058042A (en) 1997-12-26 2000-05-02 Sony Corporation Semiconductor nonvolatile memory device and method of data programming the same
KR100297602B1 (en) * 1997-12-31 2001-08-07 윤종용 Method for programming a non-volatile memory device
JP3313641B2 (en) * 1998-02-27 2002-08-12 エヌイーシーマイクロシステム株式会社 Semiconductor storage device
US5949720A (en) * 1998-10-30 1999-09-07 Stmicroelectronics, Inc. Voltage clamping method and apparatus for dynamic random access memory devices
US6469955B1 (en) * 2000-11-21 2002-10-22 Integrated Memory Technologies, Inc. Integrated circuit memory device having interleaved read and program capabilities and methods of operating same
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
JP2000243085A (en) 1999-02-22 2000-09-08 Hitachi Ltd Semiconductor device
KR100328359B1 (en) * 1999-06-22 2002-03-13 윤종용 A flash memory device capable of minimizing a substrate voltage bouncing and a program method thereof
JP3863330B2 (en) * 1999-09-28 2006-12-27 株式会社東芝 Nonvolatile semiconductor memory
JP2001184881A (en) * 1999-12-28 2001-07-06 Toshiba Corp Read-out circuit for non-volatile semiconductor memory
JP3983969B2 (en) * 2000-03-08 2007-09-26 株式会社東芝 Nonvolatile semiconductor memory device
US6504757B1 (en) * 2000-08-11 2003-01-07 Advanced Micro Devices, Inc. Double boosting scheme for NAND to improve program inhibit characteristics
JP2002100192A (en) * 2000-09-22 2002-04-05 Toshiba Corp Non-volatile semiconductor memory
US6717851B2 (en) * 2000-10-31 2004-04-06 Sandisk Corporation Method of reducing disturbs in non-volatile memory
KR100635195B1 (en) 2000-12-29 2006-10-16 주식회사 하이닉스반도체 Flash memory device
US6407953B1 (en) 2001-02-02 2002-06-18 Matrix Semiconductor, Inc. Memory array organization and related test method particularly well suited for integrated circuits having write-once memory arrays
KR100381956B1 (en) * 2001-02-02 2003-04-26 삼성전자주식회사 Sense amplifier circuit for use in a flash memory device
US6307783B1 (en) * 2001-02-26 2001-10-23 Advanced Micro Devices, Inc. Descending staircase read technique for a multilevel cell NAND flash memory device
NO20010968A (en) 2001-02-26 2002-07-15 Thin Film Electronics Asa Non-destructive reading
JP3957985B2 (en) 2001-03-06 2007-08-15 株式会社東芝 Nonvolatile semiconductor memory device
JP2002279788A (en) * 2001-03-16 2002-09-27 Toshiba Corp Non-volatile semiconductor memory
US6535434B2 (en) * 2001-04-05 2003-03-18 Saifun Semiconductors Ltd. Architecture and scheme for a non-strobed read sequence
US6570810B2 (en) * 2001-04-20 2003-05-27 Multi Level Memory Technology Contactless flash memory with buried diffusion bit/virtual ground lines
KR100439045B1 (en) * 2001-06-29 2004-07-05 주식회사 하이닉스반도체 Circuit for clamping word-line voltage
KR200256208Y1 (en) 2001-08-31 2001-12-13 박진우 Apparatus for part dyeing
JP4454896B2 (en) * 2001-09-27 2010-04-21 シャープ株式会社 Virtual ground type nonvolatile semiconductor memory device
DE10154613B4 (en) * 2001-11-07 2006-11-23 Infineon Technologies Ag Method for precharging memory cells of a dynamic semiconductor memory during power up and semiconductor memory
US6751129B1 (en) * 2002-05-21 2004-06-15 Sandisk Corporation Efficient read, write methods for multi-state memory
US7046568B2 (en) 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6983428B2 (en) 2002-09-24 2006-01-03 Sandisk Corporation Highly compact non-volatile memory and method thereof
US6987693B2 (en) * 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
KR100615975B1 (en) 2002-09-24 2006-08-28 쌘디스크 코포레이션 Non-volatile memory and its sensing method
US7443757B2 (en) 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US6956770B2 (en) * 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7064980B2 (en) 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6046940A (en) * 1994-06-29 2000-04-04 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US20020118574A1 (en) * 2001-02-26 2002-08-29 Geoffrey Gongwer Non-volatile memory with improved programming and method therefor

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