WO2004032143A3 - Voltage generation circuitry having temperature compensation - Google Patents

Voltage generation circuitry having temperature compensation Download PDF

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Publication number
WO2004032143A3
WO2004032143A3 PCT/US2003/031140 US0331140W WO2004032143A3 WO 2004032143 A3 WO2004032143 A3 WO 2004032143A3 US 0331140 W US0331140 W US 0331140W WO 2004032143 A3 WO2004032143 A3 WO 2004032143A3
Authority
WO
WIPO (PCT)
Prior art keywords
temperature compensation
voltage generation
generation circuitry
techniques
memory
Prior art date
Application number
PCT/US2003/031140
Other languages
French (fr)
Other versions
WO2004032143A2 (en
Inventor
Yongliang Wang
Raul A Cernea
Chi-Ming Wang
Original Assignee
Sandisk Corp
Yongliang Wang
Raul A Cernea
Chi-Ming Wang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp, Yongliang Wang, Raul A Cernea, Chi-Ming Wang filed Critical Sandisk Corp
Priority to AU2003275369A priority Critical patent/AU2003275369A1/en
Publication of WO2004032143A2 publication Critical patent/WO2004032143A2/en
Publication of WO2004032143A3 publication Critical patent/WO2004032143A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Abstract

Techniques for producing and utilizing temperature compensated voltages to accurately read signals (e.g., voltages) representing data stored in memory cells of a memory system are disclosed. The memory system is, for example, a memory card. The magnitude of the temperature compensation can be varied or controlled in accordance with a temperature coefficient. These techniques are particularly well suited for used with memory cells that provide multiple levels of storage.
PCT/US2003/031140 2002-10-01 2003-09-30 Voltage generation circuitry having temperature compensation WO2004032143A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003275369A AU2003275369A1 (en) 2002-10-01 2003-09-30 Voltage generation circuitry having temperature compensation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/263,016 US6801454B2 (en) 2002-10-01 2002-10-01 Voltage generation circuitry having temperature compensation
US10/263,016 2002-10-01

Publications (2)

Publication Number Publication Date
WO2004032143A2 WO2004032143A2 (en) 2004-04-15
WO2004032143A3 true WO2004032143A3 (en) 2004-07-01

Family

ID=32030287

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/031140 WO2004032143A2 (en) 2002-10-01 2003-09-30 Voltage generation circuitry having temperature compensation

Country Status (3)

Country Link
US (1) US6801454B2 (en)
AU (1) AU2003275369A1 (en)
WO (1) WO2004032143A2 (en)

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JP2007059024A (en) * 2005-08-26 2007-03-08 Micron Technol Inc Method and device for generating temperature compensated reading/verifying operation in flash memory
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US7342831B2 (en) * 2006-06-16 2008-03-11 Sandisk Corporation System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7391650B2 (en) * 2006-06-16 2008-06-24 Sandisk Corporation Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
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US7471582B2 (en) * 2006-07-28 2008-12-30 Freescale Semiconductor, Inc. Memory circuit using a reference for sensing
US7436724B2 (en) * 2006-08-04 2008-10-14 Sandisk Corporation Method and system for independent control of voltage and its temperature co-efficient in non-volatile memory devices
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US7403434B1 (en) * 2006-12-29 2008-07-22 Sandisk Corporation System for controlling voltage in non-volatile memory systems
US7447093B2 (en) * 2006-12-29 2008-11-04 Sandisk Corporation Method for controlling voltage in non-volatile memory systems
US7554853B2 (en) * 2006-12-30 2009-06-30 Sandisk Corporation Non-volatile storage with bias based on selective word line
US7583535B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Biasing non-volatile storage to compensate for temperature variations
US7468919B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Biasing non-volatile storage based on selected word line
US7525843B2 (en) * 2006-12-30 2009-04-28 Sandisk Corporation Non-volatile storage with adaptive body bias
US7583539B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Non-volatile storage with bias for temperature compensation
US7468920B2 (en) 2006-12-30 2008-12-23 Sandisk Corporation Applying adaptive body bias to non-volatile storage
US7606076B2 (en) * 2007-04-05 2009-10-20 Sandisk Corporation Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
US7606072B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop
US7606071B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Compensating source voltage drop in non-volatile storage
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US7969235B2 (en) 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US7755946B2 (en) * 2008-09-19 2010-07-13 Sandisk Corporation Data state-based temperature compensation during sensing in non-volatile memory
US8197683B2 (en) * 2008-10-16 2012-06-12 William Steven Lopes System for conditioning fluids utilizing a magnetic fluid processor
US8004917B2 (en) 2008-09-22 2011-08-23 Sandisk Technologies Inc. Bandgap voltage and temperature coefficient trimming algorithm
US7889575B2 (en) * 2008-09-22 2011-02-15 Sandisk Corporation On-chip bias voltage temperature coefficient self-calibration mechanism
US7804729B2 (en) * 2008-11-14 2010-09-28 Macronix International Co., Ltd. Temperature compensation circuit and method for sensing memory
US7876618B2 (en) * 2009-03-23 2011-01-25 Sandisk Corporation Non-volatile memory with reduced leakage current for unselected blocks and method for operating same
US8045384B2 (en) 2009-06-22 2011-10-25 Sandisk Technologies Inc. Reduced programming pulse width for enhanced channel boosting in non-volatile storage
US7916533B2 (en) * 2009-06-24 2011-03-29 Sandisk Corporation Forecasting program disturb in memory by detecting natural threshold voltage distribution
US7973592B2 (en) 2009-07-21 2011-07-05 Sandisk Corporation Charge pump with current based regulation
US8339183B2 (en) 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US7974134B2 (en) * 2009-11-13 2011-07-05 Sandisk Technologies Inc. Voltage generator to compensate sense amplifier trip point over temperature in non-volatile memory
US8334796B2 (en) 2011-04-08 2012-12-18 Sandisk Technologies Inc. Hardware efficient on-chip digital temperature coefficient voltage generator and method
US8526233B2 (en) 2011-05-23 2013-09-03 Sandisk Technologies Inc. Ramping pass voltage to enhance channel boost in memory device, with optional temperature compensation
US8611157B2 (en) 2011-12-22 2013-12-17 Sandisk Technologies Inc. Program temperature dependent read
US8576651B2 (en) 2012-01-20 2013-11-05 Sandisk 3D Llc Temperature compensation of conductive bridge memory arrays
US8542000B1 (en) 2012-03-19 2013-09-24 Sandisk Technologies Inc. Curvature compensated band-gap design
US8941369B2 (en) 2012-03-19 2015-01-27 Sandisk Technologies Inc. Curvature compensated band-gap design trimmable at a single temperature
US9535614B2 (en) 2013-11-21 2017-01-03 Sandisk Technologies Llc Temperature based flash memory system maintenance
US9541456B2 (en) 2014-02-07 2017-01-10 Sandisk Technologies Llc Reference voltage generator for temperature sensor with trimming capability at two temperatures
US9373408B2 (en) 2014-10-07 2016-06-21 SanDisk Technologies, Inc. Highly linear analog-to-digital converter and method for nonvolatile memory
US9653156B2 (en) * 2015-02-20 2017-05-16 Kabushiki Kaisha Toshiba Memory controller, nonvolatile semiconductor memory device and memory system
JP2016157505A (en) * 2015-02-26 2016-09-01 ルネサスエレクトロニクス株式会社 Semiconductor device
KR102374841B1 (en) 2015-05-28 2022-03-16 삼성전자주식회사 Variable voltage generation circuit and memory device including the same
US9715913B1 (en) 2015-07-30 2017-07-25 Sandisk Technologies Llc Temperature code circuit with single ramp for calibration and determination
US9583198B1 (en) 2016-04-22 2017-02-28 Sandisk Technologies Llc Word line-dependent and temperature-dependent pass voltage during programming
KR102524923B1 (en) * 2018-06-20 2023-04-26 에스케이하이닉스 주식회사 Storage device and operating method thereof
US11875043B1 (en) 2022-08-29 2024-01-16 Sandisk Technologies Llc Loop dependent word line ramp start time for program verify of multi-level NAND memory

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US5864504A (en) * 1995-11-17 1999-01-26 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory with temperature compensation for read/verify referencing scheme
JP2000011671A (en) * 1998-06-29 2000-01-14 Hitachi Ltd Semiconductor memory device
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Non-Patent Citations (1)

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Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 04 31 August 2000 (2000-08-31) *

Also Published As

Publication number Publication date
AU2003275369A8 (en) 2004-04-23
AU2003275369A1 (en) 2004-04-23
US6801454B2 (en) 2004-10-05
US20040062085A1 (en) 2004-04-01
WO2004032143A2 (en) 2004-04-15

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