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Patentsuche

  1. Erweiterte Patentsuche
VeröffentlichungsnummerWO2004048639 A3
PublikationstypAnmeldung
AnmeldenummerPCT/GB2003/005130
Veröffentlichungsdatum18. Nov. 2004
Eingetragen25. Nov. 2003
Prioritätsdatum25. Nov. 2002
Auch veröffentlicht unterWO2004048639A2
VeröffentlichungsnummerPCT/2003/5130, PCT/GB/2003/005130, PCT/GB/2003/05130, PCT/GB/3/005130, PCT/GB/3/05130, PCT/GB2003/005130, PCT/GB2003/05130, PCT/GB2003005130, PCT/GB200305130, PCT/GB3/005130, PCT/GB3/05130, PCT/GB3005130, PCT/GB305130, WO 2004/048639 A3, WO 2004048639 A3, WO 2004048639A3, WO-A3-2004048639, WO2004/048639A3, WO2004048639 A3, WO2004048639A3
ErfinderDavid Charles Poole, Jeffrey James Harris, Gavin Charles Rider
AntragstellerOxford Instr Plasma Technology, David Charles Poole, Jeffrey James Harris, Gavin Charles Rider
Zitat exportierenBiBTeX, EndNote, RefMan
Externe Links:  Patentscope, Espacenet
Method and apparatus for controlling a deposition process
WO 2004048639 A3
Zusammenfassung
A method and apparatus is provided for rapidly conducting studies of the temperature dependency of CVD processes, in a combinatorial style and with high temperature resolution, while using a single test substrate and few system adjustments. Other combinatorial experiments can also be conducted using the same apparatus to explore the interdependencies of other process parameters to map out a multidimensional process space. The preferred process conditions thereby determined can then be programmed into the deposition equipment’s control system to allow the same apparatus to be used immediately for production of uniform optimised films, without the need for any further equipment or process cross calibration. Preferably, the same apparatus used to determine an optimal growth rate at the knee of an Arrhenius curve is also used for back substrate processing.
Patentzitate
Zitiertes PatentEingetragen Veröffentlichungsdatum Antragsteller Titel
WO2002092876A1 *22. Apr. 200221. Nov. 2002Aixtron AgMethod and device for depositing layers
EP1083470A2 *11. Sept. 200014. März 2001Applied Materials, Inc.Multi-computer chamber control system, method and medium
JPH08218177A * Titel nicht verfügbar
JPH11243061A * Titel nicht verfügbar
US4607591 *6. Aug. 198526. Aug. 1986Spectrum Cvd, Inc.CVD heater control circuit
US5624720 *21. Sept. 199429. Apr. 1997Canon Kabushiki KaishaProcess for forming a deposited film by reacting between a gaseous starting material and an oxidizing agent
US6162488 *14. Mai 199719. Dez. 2000Boston UniversityMethod for closed loop control of chemical vapor deposition process
US6217651 *16. Juli 199917. Apr. 2001Shin-Etsu Handotai, Co., Ltd.Method for correction of thin film growth temperature
US6335288 *24. Aug. 20001. Jan. 2002Applied Materials, Inc.Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6374194 *9. Apr. 199916. Apr. 2002The Institute Of Physical And Chemical ResearchSystem and method of diagnosing particle formation
Nichtpatentzitate
Referenz
1 *PATENT ABSTRACTS OF JAPAN vol. 1996, no. 12 26 December 1996 (1996-12-26)
2 *PATENT ABSTRACTS OF JAPAN vol. 1999, no. 14 22 December 1999 (1999-12-22)
Klassifizierungen
Internationale KlassifikationC23C16/52, C23C16/46, C23C16/24
UnternehmensklassifikationC23C16/52, C23C16/46, C23C16/24
Europäische KlassifikationC23C16/46, C23C16/52, C23C16/24
Juristische Ereignisse
DatumCodeEreignisBeschreibung
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