WO2004061981A1 - Boron phosphide-based semiconductor light-emitting device and production method thereof - Google Patents
Boron phosphide-based semiconductor light-emitting device and production method thereof Download PDFInfo
- Publication number
- WO2004061981A1 WO2004061981A1 PCT/JP2003/016816 JP0316816W WO2004061981A1 WO 2004061981 A1 WO2004061981 A1 WO 2004061981A1 JP 0316816 W JP0316816 W JP 0316816W WO 2004061981 A1 WO2004061981 A1 WO 2004061981A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- boron phosphide
- layer
- based semiconductor
- pad electrode
- crystalline
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
Definitions
- the present invention relates to a boron phosphide- based semiconductor light-emitting device which attains high emission intensity and which is equipped with a pad electrode having a structure for effectively providing a wide emission area, and to a method for producing the same.
- a light-emitting device is known to have a p-type boron phosphide layer serving as an electrode-forming layer (contact layer) for forming an Ohmic electrode (see, for example, Japanese Patent Application Laid-Open ( kokai ) No. 10-242567).
- a conventional p-type electrode formed so as to attain contact with the p-type boron phosphide contact layer which is provided on a light-emitting layer made of a Group III nitride semiconductor is fabricated from a single layer made of a gold (symbol of element: Au)-zinc (symbol of element: Zn) alloy (see the above Japanese Patent Application Laid-Open ( kokai ) No. 2- 288388).
- the pad electrode is formed so as to attain contact with a surface of a p-type or n-type boron phosphide layer (see, for example, Japanese Patent Application Laid-Open ( kokai ) No. 10-242567).
- an object of the present invention is to provide a boron phosphide-based semiconductor light-emitting device having such a pad electrode.
- Another object of the invention is to provide a production method for producing the boron phosphide- based semiconductor light-emitting device.
- a boron phosphide-based semiconductor light- emitting device comprising: a crystalline substrate; a first semiconductor formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer; a pad electrode formed on said high-resistance boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive boron phosphide-based crystalline layer extending optionally to
- a boron phosphide-based semiconductor light- emitting device comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from said first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said first boron phosphide-based semiconductor amorphous layer, for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive boron phosphide-based crystalline layer extending optionally to a portion of said boron phosphide-based
- a boron phosphide-based semiconductor light- emitting device as described in the above ( 6 ) wherein said portion of said pad electrode formed of a material able to form an Ohmic contact with said conductive boron phosphide-based crystalline layer extends to said conductive boron phosphide-based semiconductor crystalline layer.
- said pad electrode has a bottom portion formed of a material able to form a non-Ohmic contact with said boron phosphide-based semiconductor amorphous layer.
- a method for producing a boron phosphide-based semiconductor light-emitting device comprising: forming a semiconductor layer including a light- emitting layer on a crystalline substrate through vapor phase growth; depositing, through vapor phase growth, employing said first semiconductor layer serving as a base layer, at a crystalline substrate temperature falling within a range of 250°C to 1,200°C, a boron phosphide-based semiconductor amorphous layer having high resistance or a boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of the base layer; selectively removing said boron phosphide-based semiconductor amorphous layer, thereby causing said boron phosphide-based semiconductor amorphous layer to remain in a first region and exposing said first semiconductor layer in a second region different from said first region; depositing a conductive boron phosphide-based semiconductor crystalline layer on said exposed first semiconductor layer and said boron phos
- FIG. 1 is a schematic cross-sectional view of the LED mentioned in Example 1.
- FIG. 2 is a schematic plane view of the LED mentioned in Example 2.
- FIG. 3 is a schematic cross-sectional view of the LED mentioned in Example 2.
- the semiconductor is boron monophosphide (BP), boron gallium indium phosphide (compositional formula: B ⁇ Ga ⁇ In 1 _ ⁇ _ ⁇ P: 0 ⁇ ⁇ l, 0 ⁇ ⁇ ⁇ 1), or a mixed-crystal compound containing a plurality of Group V element species such as boron nitride phosphide (compositional formula: BP ⁇ Ne: 0 ⁇ ⁇ ⁇ 1) or boron arsenide phosphide (compositional formula: B ⁇ Pi- ⁇ AS ⁇ : 0 ⁇ ⁇ ⁇ 1).
- BP boron monophosphide
- B boron gallium indium phosphide compositional formula: B ⁇ Ga ⁇ In 1 _ ⁇ _ ⁇ P: 0 ⁇ ⁇ l, 0 ⁇ ⁇ ⁇ 1
- a mixed-crystal compound containing a plurality of Group V element species
- boron monophosphide is an essential constituent of boron phosphide-based semiconductor mixed-crystals.
- BP boron monophosphide
- having a band gap at room temperature as wide as 2.8 to 3.4 eV is employed as an essential constituent, a boron phosphide-based amorphous or crystalline layer having ' a wide band gap can be formed.
- the amorphous or crystalline boron phosphide-based semiconductor layer can be formed through use of vapor phase growth means such as the halogen method (see “Journal of the Japanese Association for Crystal Growth,” Vol. 24, No. 2, (1997), p. 150), the hydride method (see J. Crystal Growth, 24/25 (1974), p. 193-196), or molecular beam epitaxy (see J. Solid State Chem. , 133 (1997), p. 269-272).
- the semiconductor layer can be vapor-phase grown through metal-organic chemical vapor deposition (MOCVD) (see Inst. Phys. Conf. Ser., No. 129 (IOP Publishing Ltd. (UK, 1993), p. 157- 162).
- MOCVD is a particularly advantageous means for vapor-phase growing an amorphous layer at lower temperature, because a readily decomposable substance such as triethylboran (chemical formula: (C 2 H 5 ) 3 B) is employed as a boron source.
- a readily decomposable substance such as triethylboran (chemical formula: (C 2 H 5 ) 3 B) is employed as a boron source.
- the growth temperature is preferably controlled to 1,200°C or lower. When the growth temperature is higher than
- V/III ratio is essentially controlled so as to fall within a range of 0.2 to 50.
- the boron phosphide-based semiconductor • amorphous layer formed on a vapor-phase grown semiconductor layer serving as a base layer is preferably fabricated from a high-resistance amorphous layer having a large resistivity; an amorphous layer which is of a conduction type opposite to (converse to) that of the semiconductor layer serving as the base layer; or a multilayer structure formed of the amorphous layers .
- the high- resistance amorphous layer preferably has a resistivity at room temperature of 10 ⁇ -cm or higher, more preferably 10 2 ⁇ -cm or higher.
- the amorphous layer having a high resistance is referred to as a "high-resistance amorphous layer,” and the amorphous layer which is of a conduction type opposite to that of the base layer is referred to as an "opposite conduction type amorphous layer.”
- An essential requirement is that either a high-resistance amorphous layer or an opposite conduction type amorphous layer is provided under the bottom of a pad electrode, which is disposed above the light-emitting layer or the barrier layer; i.e., is provided in the projection area of the pad electrode.
- the high-resistance amorphous layer serves as a resistor which inhibits a flow of device operation current from the bottom of the pad electrode into the underlying light-emitting layer in a short circuit manner.
- the conductive amorphous layer forms a pn junction structure with the base layer and inhibits flow of device operation current from the bottom of the pad electrode into the underlying light-emitting layer in a short circuit manner.
- the area where the high- resistance amorphous layer or the opposite conduction type amorphous layer (a first area) is to be formed is not necessarily identical with the area where the bottom of the pad electrode is formed (a third area), and the first area is effective so long as the area includes at least a portion of the bottom of the pad electrode (the projection area of the pad electrode).
- the opposite conduction type amorphous layer which forms a pn junction for inhibiting device operation current or the high-resistance amorphous layer is preferably provided in an area limited to the projection area of the pad electrode or to an area around the projection area.
- the high-resistance amorphous layer or the opposite conduction type amorphous layer is formed in the projection area of the pad electrode, device operation current from the bottom of the pad electrode into the underlying light-emitting layer in a short circuit manner is prevented, whereby light emission occurring in an area of the light-emitting layer covered with the pad electrode can be prevented.
- the boron phosphide-based semiconductor amorphous layer is fabricated by stacking an high-resistance amorphous layer and an amorphous layer which is of a conduction type opposite to that of the base layer, flow of the aforementioned device operation current in a short circuit manner is more effectively prevented.
- an opposite conduction type amorphous layer is provided on the base layer, and then a high-resistance amorphous layer is formed on the opposite conduction type amorphous layer, because a flow of device operation current into a junction portion of the pn junction between the opposite conduction type amorphous layer and the base layer can be effectively decreased by the mediation of the high-resistance amorphous layer.
- the high-resistance amorphous layer suitably has a thickness of 2 nm or more, so as to uniformly cover the surface of the base layer with the amorphous layer.
- the opposite conduction type amorphous layer preferably has a thickness of 50 nm or more, so as to inhibit passage of carriers, through the tunnel effect, to the base layer.
- a thickness of the high- resistance amorphous layer or the opposite conduction type amorphous layer in excess of 200 nm is not preferred, because the difference in level between the Ohmic electrode mentioned hereafter and the surface of the boron phosphide-based semiconductor crystalline layer increases, thereby inhibiting formation of an electrode having excellent bonding performance to the boron phosphide-based semiconductor crystalline layer.
- a pad electrode whose bottom is in contact with an opposite conduction type amorphous layer or a high- resistance amorphous layer may be formed in the following manner. Firstly, the opposite conduction type amorphous layer or the high-resistance amorphous layer is grown on the base layer, followed by selective removal of a portion of the opposite conduction type amorphous layer or a portion of the high-resistance amorphous layer which is present in the first area including an area where a pad electrode is formed.
- a conductive boron phosphide crystalline layer is grown, and a portion of the conductive boron phosphide-based crystalline layer which is present in the area where the pad electrode is formed is removed, thereby exposing a surface of the opposite conduction type amorphous layer or the high- resistance amorphous layer.
- a material which suitably forms the bottom of the pad electrode is deposited.
- the boron phosphide-based amorphous layer and the boron phosphide-based crystalline layer can be removed through etching; for example, by a conventional chlorine (symbol of element: Cl) plasma etching technique.
- a conventional photolithographic technique can be employed.
- the bottom of the pad electrode is preferably provided through a selective patterning technique based on the conventional photolithographic technique. Even when the pad electrode is formed such that the bottom thereof is in contact with any of the surface of the opposite conduction type or high-resistance amorphous layer, the bottom portion can inhibit a flow of device operation current in a short circuit manner to a portion of the underlying light-emitting layer corresponding to the projection area of the bottom portion.
- device operation current can be supplied preferentially to a light emission area other than the projection area of the pad electrode which intercepts light emission to the outside.
- a configuration is suitable for producing, for example, a high-emission-intensity LED.
- the amorphous layer is formed from a layer to which no impurity has been intentionally added; i.e., an undoped layer, electrical or crystallographic undesirable modification of the light-emitting layer or the barrier layer serving as a base layer is effectively prevented.
- non-Ohmic contact refers to electric contact involving a rectification characteristic as shown in the case of Schottky contact.
- the non-Ohmic contact also encompasses an electric contact with a contact resistance higher than 1 x 10 "3 ⁇ -cm.
- the material for forming the bottom portion of the pad electrode varies in accordance with the conduction type of the boron phosphide-based semiconductor* amorphous layer.
- the bottom portion is formed from a gold alloy such as gold (symbol of element: Au)-germanium (symbol of element: Ge), gold (Au)-tin (symbol of element: Sn), or gold (Au)-indium (symbol of element: In) .
- the bottom portion is formed from a gold alloy such as gold (Au)-zinc
- an Ohmic electrode formed of a material able to form Ohmic contact with the boron phosphide-based semiconductor crystalline layer.
- the material for forming the Ohmic electrode is selected in accordance with the conduction type of the boron phosphide-based semiconductor crystalline layer.
- the p-type boron phosphide-based semiconductor crystalline layer can be formed from a gold alloy such as gold-zinc or gold- 5 beryllium.
- the n-type boron phosphide-based semiconductor crystalline layer can be formed from a gold alloy such as gold-germanium, gold-tin, or gold-indium.
- a gold alloy such as gold-germanium, gold-tin, or gold-indium.
- the boron phosphide-based semiconductor crystalline layer on which the Ohmic electrode is provided are layers having conduction types differing from each other, the bottom portion of the pad electrode and the Ohmic electrode provided on the bottom portion
- both the bottom portion and the Ohmic electrode are formed from a gold-germanium alloy. It is not preferred that both the Schottky rectifying electrode and the Ohmic electrode are formed
- niobium symbol of element: Nb
- chromium symbol of element: Cr
- transition metal the aforementioned transition metal
- An Ohmic electrode which is closely bonded with the boron phosphide-based semiconductor crystalline layer can be formed by controlling the bottom area of the bottom
- the plane shape of the bottom portion and that of the Ohmic electrode are not necessarily similar to each other.
- the bottom portion may have a circular plane shape
- the Ohmic electrode may have a square plane shape.
- the center of the plane shape of the bottom portion and that of the plane shape of the Ohmic electrode generally coincide with each other for producing a pad electrode which is bonded to the boron phosphide-based semiconductor crystalline layer with in-plane isotropy in bonding strength.
- Another Ohmic electrode is preferably formed such that the electrode is in electrical contact with the Ohmic electrode which is in close contact with the boron phosphide-based semiconductor crystalline layer and is caused to extend to a surface of the boron phosphide- based semiconductor crystalline layer, because device operation current can be distributed to a light-emission area other than the projection area of the pad electrode.
- device operation current can be diffused over the plane of a light- emission area which is not covered with the pad electrode and from which emitted light is suitably extracted to the outside.
- the Ohmic electrode which extends to the surface is more preferably formed of an alloy containing a Group IV element such as tin (Sn) or germanium (Ge) rather than a Group III element such as gallium (Ga) or indium (In), from the viewpoint of close bonding with the boron phosphide-based semiconductor crystalline layer.
- a Group IV element such as tin (Sn) or germanium (Ge)
- a Group III element such as gallium (Ga) or indium (In)
- the pad electrode and the Ohmic electrode which extends to the surface are formed from the same material, the two electrodes can be formed simultaneously, thereby attaining production of a boron phosphide-based semiconductor light-emitting device through simple processes.
- the Ohmic electrode which extends to the surface is preferably placed such that the device operation current can be distributed entirely and uniformly over the light- emission area other than the projection area of the pad electrode.
- the Ohmic electrode is preferably placed such that a uniform electric potential distribution can be attained on the surface of the boron phosphide-based semiconductor crystalline layer, furthermore on the surface of the light-emitting layer.
- the Ohmic electrode which extends to the surface can be formed of a stripe, circle, or frame form electrode which is in electrical contact with the pad electrode. These electrodes, such as a stripe form electrode and a frame form electrode, can be combined so as to establish electric contact with the pad electrode.
- a line electrode for forming the stripe, circle, or frame form electrode generally has a line width of 10 ⁇ m or more, more preferably 20 ⁇ m or more, so as to prevent breakage upon increase in device operation current flow.
- an electrode having a desired shape and line width can be provided on the surface of the boron phosphide-based semiconductor crystalline layer.
- the boron phosphide-based semiconductor light- emitting device is produced by forming a pad electrode or an Ohmic electrode attached to the pad electrode, and subsequently cutting . the semiconductor element into individual devices .
- the cutting to form individual devices is performed through employment of grooves in the form of a straight line, which are generally provided along a cleavage direction of a crystal serving as the substrate and which are generally called cutting lines, scribe lines, or dicing lines.
- the pad electrode is provided such that the bottom portion thereof is in contact with the boron phosphide-based semiconductor amorphous layer.
- a portion of the boron phosphide- based semiconductor crystalline layer corresponding to an area where the bottom portion is provided must be removed.
- a surface of the amorphous layer is exposed in an area where the bottom portion of the pad electrode is provided and a surface of the boron phosphide-based semiconductor amorphous layer is exposed in an area where cutting lines are provided, thereby forming grooves for cutting a semiconductor element.
- the cutting grooves are advantageously provided along ⁇ 110> crystalline directions, which are cleavage directions and are normal to each other.
- Each cutting groove is preferably of a sufficient width so as to prevent severe damage of the boron phosphide- based semiconductor crystalline layer serving as a groove side caused by contact with the cutting edge of a cutting tool.
- the width preferably falls within a range of 40 ⁇ m to 70 ⁇ m.
- the cutting line has a width in excess of 70 ⁇ m, the cutting line is unnecessarily broad, and an excessively wide space is provided for the cutting edge of the cutting tool. Therefore, the cut edge tends to deviate from a straight line, causing difficulty in production of individual devices having smooth cut surfaces.
- the high-resistance boron phosphide-based semiconductor amorphous layer or the boron phosphide- based semiconductor amorphous layer having a conduction type opposite to that of the base layer which is provided under the bottom surface of the pad electrode inhibits short-circuit-like flow of device operation current supplied via the bottom of the pad electrode provided thereon into the underlying light-emitting layer.
- the bottom surface of the pad electrode which is formed from a material able to form non-Ohmic contact with the boron phosphide-based semiconductor prevents short-circuit-like flow of device operation current supplied via the pad electrode into the underlying boron phosphide-based semiconductor amorphous layer.
- FIG. 1 schematically shows the cross-section of a stacked structure 11 employed for fabricating an LED 10 having a double-hetero (DH) structure.
- a phosphorus (P) -doped n-type silicon (Si) single crystal was used as a substrate 101.
- a lower cladding layer 102 formed of n-type boron phosphide (BP) was deposited through use of atmospheric pressure (near atmospheric pressure) metal- organic vapor phase epitaxy (MOVPE) means.
- the lower cladding layer 102 was deposited at 950 °C by use of a triethylboran (molecular formula: (C 2 H S ) 3 B) as a boron (B) source and phosphine (molecular formula: PH 3 ) as a phosphorus source.
- the carrier concentration of the undoped n-type BP layer serving as the lower cladding layer 102 was found to be 1 x 10 19 cm "3 , and the thickness of the layer was controlled to 420 nm.
- a light- emitting layer 103 formed of n-type gallium indium nitride (Ga 0-90 ln 0 . 10 N) was vapor-grown through atmospheric pressure MOCVD at 825°C.
- the gallium indium nitride layer serving as a well layer 103 had a multi-phase structure which was formed from a plurality of gallium indium nitride domains having indium compositional proportions that differ from one another.
- the thickness of the well layer 103 was controlled to 10 nm.
- a silicon (Si) -doped n-type gallium nitride (GaN) layer 104 was provided through use of atmospheric pressure MOCVD means, at 825°C, by use of trimethylgallium (molecular formula: (CH 3 ) 3 Ga) /NH 3 /H 2 reaction system so as to attain joining to the light-emitting layer.
- the thickness of the GaN layer 104 was controlled to 20 nm.
- the n-type GaN layer 104 was provided in order to form, in an inner region of the light-emitting layer 103 in the vicinity of the junction interface, a band structure in which a conduction band and a valence band are bent.
- a p-type boron phosphide crystalline layer 106 was provided so as to attain joining to the remained amorphous layer 105 and the exposed surface of the n-type GaN layer 104.
- the undoped boron phosphide crystalline layer 106 was provided at 1,025°C, which was higher than the amorphous layer 105 growth temperature.
- the center of the surface of the boron phosphide crystalline layer 106 serving as the p-type upper cladding layer was selectively patterned, thereby providing a circular plane serving as an area for providing the pad electrode 107.
- an area 108 for providing a cutting groove was selectively patterned, thereby providing a stripe-shape plane.
- the boron phosphide crystalline layer 106 provided on the amorphous layer 105 was selectively removed through the plasma etching method employing argon (Ar) /methane
- the portion of the surface of the boron phosphide amorphous layer 105 corresponding to the circular planer area (diameter: 100 ⁇ m) for providing the pad electrode 107 was exposed.
- the stripe-shape area 108 having a width of 50 ⁇ m serving as a cutting line the surface of the boron phosphide crystalline layer 105 was also exposed.
- the stripe-shape area 108 serving as a cutting line was provided in a direction parallel to a cleavage direction of the Si single-crystal substrate 101; i.e., the ⁇ 110> crystalline direction. Another cutting line was provided in a direction normal to the ⁇ 110> crystalline direction.
- a gold- germanium (Au 95 wt.%, Ge 5 wt.%) alloy film serving as a bottom portion 107a of the pad electrode 107 was deposited through a conventional vacuum vapor deposition technique. Subsequently, the mask was peeled off from the surface of the boron phosphide crystalline layer 106, thereby removing the Au-Ge film deposited on the mask. The thickness of the Au-Ge film remaining exclusively in the area of the pad electrode 107 and serving as a bottom portion of the pad electrode was controlled to 150 nm.
- the surface of the boron phosphide crystalline layer 106 was coated with a photoresist, and the layer was selectively patterned, to thereby provide a circular opening (diameter: 150 ⁇ m) exclusively in the area corresponding to that for providing an Ohmic electrode 107b of the pad electrode 107.
- the center of the thus-formed opening and the center of the plane shape of the aforementioned bottom portion 107a were caused to coincide.
- a gold-beryllium (Au 99 wt.%, Be 1 wt.%) alloy film was deposited through a conventional vacuum vapor deposition technique, to thereby form the Ohmic electrode 107b which attained Ohmic contact with the p- type boron phosphide crystalline layer 106.
- the thickness of the Ohmic electrode 107b was controlled to 800 nm.
- the Ohmic electrode 107b having a planar area larger than that of the bottom portion 107a and serving as the upper portion of the pad electrode 107 which was in contact with the surface of the.
- p-type boron phosphide crystalline layer 106 was formed.
- each cutting line 108 was adjusted to a value about 2.5 times that of the blade (about 20 ⁇ m) , each separated LED 10 had a flat side surface.
- TEM technique revealed that the boron phosphide amorphous layer 105 exhibited a halo electron-beam diffraction pattern in a restricted field.
- the electron-beam diffraction pattern of the boron phosphide crystalline layer 106 diffraction spots appearing on the diffraction ring were observed more often than those observed in the case of the single-crystal layer, indicating that the boron phosphide crystalline layer was formed of a polycrystalline layer.
- a ceiling portion of the Ohmic electrode 107b having a plate area greater than that of the bottom portion 107a was provided so as to attain contact with the surface of the p-type boron phosphide crystalline layer 106. Therefore, no peeling of the pad electrode 107 was observed during wire bonding. Emission characteristics of each LED was confirmed upon passage of device operation current of 20 mA in the forward direction between the pad electrode 107 and the n-type Ohmic electrode 109, with these two electrode being firmly bonded.
- the LED 10 emitted blue light having an emission center wavelength of 440 nm, with a half-width value observed in the emission spectrum of 280 meV.
- Luminous intensity of the LED chip before resin-molded as determined through a conventional photometric sphere was 7 mcd. Furthermore, emission with uniform intensity was provided from virtually the entire portion of the emission area other than the projection area of the pad electrode 107, because the lower bottom portion 107a of the p-type Ohmic electrode 107b was provided so as to attain contact with the surface of the high-resistance boron phosphide amorphous layer 105, thereby distributing the device operation current over a wide area of the light-emitting area 103.
- the forward voltage at a forward current of 20 mA was found to be 3.5 V and the reverse voltage at a reverse current of 10 ⁇ A was found to be 8.2 V.
- FIG. 2 is a schematic plane view of the LED 12 according to Example 2.
- FIG. 3 schematically shows a cross-section of the LED 12 taken along the broken line A-A' shown in FIG. 2.
- the same members as shown in FIG. 1 are denoted by the same reference numerals.
- an n-type GaN light-emitting layer 104 which had been formed in the same manner as described in Example 1, an undoped p-type boron phosphide amorphous layer 201 was formed on an n-type GaN light-emitting layer 104 which had been formed in the same manner as described in Example 1, an undoped p-type boron phosphide amorphous layer 201 was formed. The carrier concentration and the thickness of the p-type boron phosphide amorphous layer 201 were controlled to 8 x 10 18 cm "3 and 12 nm, respectively.
- an undoped high-resistance boron phosphide layer 105 was stacked on the p-type boron phosphide amorphous layer 201.
- the resistivity and the thickness of the undoped high-resistance boron phosphide layer 105 were controlled to 10 ⁇ -cm at room temperature and 12 nm, respectively.
- a portion of the p-type boron phosphide amorphous layer 105 and a portion of the high-resistance boron phosphide amorphous layer 201 were left exclusively in an area where a pad electrode 107 was to be formed.
- the p-type and high-resistance amorphous layers 105 and 201 were left such that circular planes having a diameter of 120 ⁇ m were stacked, with the centers of the plane being caused to coincide. Subsequently, an undoped >p- type boron phosphide crystalline layer 106 as described in Example 1 was deposited on the high-resistance boron phosphide amorphous layer 105.
- the pad electrode 107 having a bottom portion 107a (molybdenum (Mo)) being in contact with the surface of the high-resistance amorphous surface 105 and an upper Ohmic electrode 107b (gold- beryllium (Au-Be)) was formed.
- the thickness of the molybdenum (Mo) layer and that of the Au-Be layer were controlled to 10 nm and 700 nm, respectively.
- a circular electrode and a stripe form electrode serving as an additional Ohmic electrode 107c were attached, so as to establish electric contact, to the Au-Be Ohmic electrode 107b serving as a ceiling portion of the pad electrode 107.
- a near field light emission pattern indicated that emission intensity was uniform on a virtually entire portion of the emission area other than the pad electrode 107.
- the emission. ith uniform intensity was confirmed to be provided from the structure in which the bottom portion 107a provided under the p- type Ohmic electrode 107b serving as an upper portion was formed on the multi-layer structure including the p-type and high-resistance boron phosphide amorphous layers 105 and 201, whereby device operation current can be distributed over a wide area of the light-emitting layer 103.
- the forward voltage at a forward current of 20 mA was found to be 3.4 V and the reverse voltage at a reverse current of 10 ⁇ A was found to be 8.3 V.
- a boron phosphide-based semiconductor crystalline layer is provided via a boron phosphide-based semiconductor amorphous layer, and a pad electrode is provided such that the bottom portion of the pad electrode is in contact with the surface of the boron phosphide-based semiconductor amorphous layer as well as with the surface of the boron phosphide-based semiconductor crystalline layer.
- a boron phosphide-based semiconductor light-emitting device such as a light-emitting diode, which has a wide emission area and attains high emission intensity, can be provided.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003295236A AU2003295236A1 (en) | 2003-01-06 | 2003-12-25 | Boron phosphide-based semiconductor light-emitting device and production method thereof |
US10/540,995 US7365366B2 (en) | 2003-01-06 | 2003-12-25 | Boron phosphide-based semiconductor light-emitting device and production method thereof |
DE10394018T DE10394018B4 (en) | 2003-01-06 | 2003-12-25 | Boron-phosphide-based semiconductor light-emitting device and method for its production |
US12/040,107 US7488987B2 (en) | 2003-01-06 | 2008-02-29 | Boron phosphide-based semiconductor light-emitting device and production method thereof |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003000442A JP3939251B2 (en) | 2003-01-06 | 2003-01-06 | Boron phosphide-based semiconductor light-emitting device and method for manufacturing the same |
JPNO.2003-000442 | 2003-01-06 | ||
US43899703P | 2003-01-10 | 2003-01-10 | |
US60/438,997 | 2003-01-10 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10540995 A-371-Of-International | 2003-12-25 | ||
US12/040,107 Division US7488987B2 (en) | 2003-01-06 | 2008-02-29 | Boron phosphide-based semiconductor light-emitting device and production method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004061981A1 true WO2004061981A1 (en) | 2004-07-22 |
Family
ID=32716353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/016816 WO2004061981A1 (en) | 2003-01-06 | 2003-12-25 | Boron phosphide-based semiconductor light-emitting device and production method thereof |
Country Status (4)
Country | Link |
---|---|
US (2) | US7365366B2 (en) |
AU (1) | AU2003295236A1 (en) |
DE (1) | DE10394018B4 (en) |
WO (1) | WO2004061981A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7365366B2 (en) * | 2003-01-06 | 2008-04-29 | Showa Denka K.K. | Boron phosphide-based semiconductor light-emitting device and production method thereof |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI296160B (en) * | 2004-05-06 | 2008-04-21 | Showa Denko Kk | Pn junction-type compound semiconductor light emitting diode |
EP1900043B1 (en) * | 2005-07-05 | 2016-02-17 | Showa Denko K.K. | Light-emitting diode and method for fabrication thereof |
JP2007123517A (en) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | Semiconductor light-emitting element, and semiconductor light-emitting apparatus |
KR101047634B1 (en) * | 2008-11-24 | 2011-07-07 | 엘지이노텍 주식회사 | Light emitting device and manufacturing method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0395392A2 (en) * | 1989-04-28 | 1990-10-31 | Kabushiki Kaisha Toshiba | Semiconductor laser using five-element compound semiconductor |
JPH09232685A (en) * | 1996-02-27 | 1997-09-05 | Toshiba Corp | Semiconductor light emitting device |
US20020000563A1 (en) * | 2000-06-21 | 2002-01-03 | Showa Denko K.K. | Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode |
US20030001162A1 (en) * | 2001-06-29 | 2003-01-02 | Showa Denko K.K. | Boron phosphide-based semiconductor device and production method thereof |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6069021A (en) * | 1997-05-14 | 2000-05-30 | Showa Denko K.K. | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer |
JPH10242567A (en) * | 1998-04-06 | 1998-09-11 | Toshiba Corp | Semiconductor laser |
US6461766B1 (en) | 1998-08-27 | 2002-10-08 | Ovonic Battery Company, Inc. | Hydrogen storage powder and process for preparing the same |
US7315050B2 (en) * | 2001-05-28 | 2008-01-01 | Showa Denko K.K. | Semiconductor device, semiconductor layer and production method thereof |
US6730987B2 (en) * | 2001-09-10 | 2004-05-04 | Showa Denko K.K. | Compound semiconductor device, production method thereof, light-emitting device and transistor |
EP1470592B1 (en) * | 2002-01-28 | 2010-09-22 | Showa Denko K.K. | Boron phosphide based semiconductor device |
US6828169B2 (en) * | 2002-01-30 | 2004-12-07 | Vetra Technology, Inc. | Method of forming group-III nitride semiconductor layer on a light-emitting device |
US6831304B2 (en) * | 2002-02-25 | 2004-12-14 | Showa Denko Kabushiki Kaisha | P-n junction type boron phosphide-based semiconductor light-emitting device and production method thereof |
US6774402B2 (en) * | 2002-03-12 | 2004-08-10 | Showa Denko Kabushiki Kaisha | Pn-juction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode |
US6831293B2 (en) * | 2002-03-19 | 2004-12-14 | Showa Denko Kabushiki Kaisha | P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source |
JP4122871B2 (en) * | 2002-07-15 | 2008-07-23 | 昭和電工株式会社 | Method for producing boron phosphide layer and boron phosphide-based semiconductor device |
US6936863B2 (en) * | 2002-11-18 | 2005-08-30 | Showa Denko K.K. | Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode |
AU2003288550A1 (en) * | 2002-12-02 | 2004-06-23 | Showa Denko K.K. | Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode |
AU2003295236A1 (en) * | 2003-01-06 | 2004-07-29 | Showa Denko K. K. | Boron phosphide-based semiconductor light-emitting device and production method thereof |
WO2005086241A1 (en) * | 2004-03-04 | 2005-09-15 | Showa Denko K.K. | Gallium nitride-based semiconductor device |
-
2003
- 2003-12-25 AU AU2003295236A patent/AU2003295236A1/en not_active Abandoned
- 2003-12-25 US US10/540,995 patent/US7365366B2/en not_active Expired - Fee Related
- 2003-12-25 WO PCT/JP2003/016816 patent/WO2004061981A1/en active IP Right Grant
- 2003-12-25 DE DE10394018T patent/DE10394018B4/en not_active Expired - Fee Related
-
2008
- 2008-02-29 US US12/040,107 patent/US7488987B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0395392A2 (en) * | 1989-04-28 | 1990-10-31 | Kabushiki Kaisha Toshiba | Semiconductor laser using five-element compound semiconductor |
JPH09232685A (en) * | 1996-02-27 | 1997-09-05 | Toshiba Corp | Semiconductor light emitting device |
US20020000563A1 (en) * | 2000-06-21 | 2002-01-03 | Showa Denko K.K. | Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode |
US20030001162A1 (en) * | 2001-06-29 | 2003-01-02 | Showa Denko K.K. | Boron phosphide-based semiconductor device and production method thereof |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 01 30 January 1998 (1998-01-30) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7365366B2 (en) * | 2003-01-06 | 2008-04-29 | Showa Denka K.K. | Boron phosphide-based semiconductor light-emitting device and production method thereof |
US7488987B2 (en) | 2003-01-06 | 2009-02-10 | Showa Denko K.K. | Boron phosphide-based semiconductor light-emitting device and production method thereof |
Also Published As
Publication number | Publication date |
---|---|
US20060163588A1 (en) | 2006-07-27 |
DE10394018B4 (en) | 2007-09-27 |
DE10394018T5 (en) | 2005-12-29 |
AU2003295236A1 (en) | 2004-07-29 |
US20080157079A1 (en) | 2008-07-03 |
US7488987B2 (en) | 2009-02-10 |
US7365366B2 (en) | 2008-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6936863B2 (en) | Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode | |
US7488987B2 (en) | Boron phosphide-based semiconductor light-emitting device and production method thereof | |
US6809346B2 (en) | Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode | |
US20100065869A1 (en) | Light emitting device and method for fabricating the same | |
JP3779255B2 (en) | Group III nitride semiconductor device, manufacturing method thereof, and light-emitting diode | |
JP3706448B2 (en) | Semiconductor light emitting device | |
US7732832B2 (en) | Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor | |
JP4329166B2 (en) | Group III nitride semiconductor optical device | |
JP4374720B2 (en) | Group III nitride semiconductor light-emitting device and method for manufacturing the same | |
KR100638148B1 (en) | Boron phosphide-based semiconductor light-emitting device and production method thereof | |
US8026525B2 (en) | Boron phosphide-based semiconductor light-emitting device | |
JP4439400B2 (en) | Boron phosphide-based semiconductor light emitting device, manufacturing method thereof, and light emitting diode | |
US7538361B2 (en) | Ohmic electrode structure, compound semiconductor light emitting device having the same, and LED lamp | |
JP3577463B2 (en) | III-nitride semiconductor light emitting diode | |
JP3975763B2 (en) | Boron phosphide-based semiconductor light-emitting device, manufacturing method thereof, and light-emitting diode | |
JP3895266B2 (en) | BORON PHOSPHIDE COMPOUND SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND LIGHT EMITTING DIODE | |
JP2002246643A (en) | Group iii nitride semiconductor light emitting element and manufacturing method thereof | |
KR20050092365A (en) | Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode | |
JP4658641B2 (en) | Boron phosphide-based semiconductor light emitting device | |
JP2004153169A (en) | Method of manufacturing p-type boron phosphide semiconductor layer, compound semiconductor element, zener diode, and light emitting diode | |
US7498612B2 (en) | Compound semiconductor light-emitting device having pn-junction type hetero structure and forming method thereof | |
JP4699738B2 (en) | Method of forming pn junction heterostructure compound semiconductor light emitting device | |
EP1593162A1 (en) | Semiconductor device, production method thereof and light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
ENP | Entry into the national phase |
Ref document number: 2006163588 Country of ref document: US Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10540995 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 20038A82723 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020057012648 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020057012648 Country of ref document: KR |
|
RET | De translation (de og part 6b) |
Ref document number: 10394018 Country of ref document: DE Date of ref document: 20051229 Kind code of ref document: P |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10394018 Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase | ||
WWG | Wipo information: grant in national office |
Ref document number: 1020057012648 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 10540995 Country of ref document: US |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8607 |