US8779597B2
(en)
*
|
2004-06-21 |
2014-07-15 |
Sang-Yun Lee |
Semiconductor device with base support structure
|
US8018058B2
(en)
*
|
2004-06-21 |
2011-09-13 |
Besang Inc. |
Semiconductor memory device
|
US8058142B2
(en)
*
|
1996-11-04 |
2011-11-15 |
Besang Inc. |
Bonded semiconductor structure and method of making the same
|
US7470598B2
(en)
*
|
2004-06-21 |
2008-12-30 |
Sang-Yun Lee |
Semiconductor layer structure and method of making the same
|
US20050280155A1
(en)
*
|
2004-06-21 |
2005-12-22 |
Sang-Yun Lee |
Semiconductor bonding and layer transfer method
|
EP2988331B1
(en)
*
|
2000-08-14 |
2019-01-09 |
SanDisk Technologies LLC |
Semiconductor memory device
|
US20060249753A1
(en)
*
|
2005-05-09 |
2006-11-09 |
Matrix Semiconductor, Inc. |
High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
|
US8071438B2
(en)
*
|
2003-06-24 |
2011-12-06 |
Besang Inc. |
Semiconductor circuit
|
US7632738B2
(en)
*
|
2003-06-24 |
2009-12-15 |
Sang-Yun Lee |
Wafer bonding method
|
US20100190334A1
(en)
*
|
2003-06-24 |
2010-07-29 |
Sang-Yun Lee |
Three-dimensional semiconductor structure and method of manufacturing the same
|
US8471263B2
(en)
|
2003-06-24 |
2013-06-25 |
Sang-Yun Lee |
Information storage system which includes a bonded semiconductor structure
|
US7473596B2
(en)
|
2003-12-19 |
2009-01-06 |
Micron Technology, Inc. |
Methods of forming memory cells
|
US7190616B2
(en)
*
|
2004-07-19 |
2007-03-13 |
Micron Technology, Inc. |
In-service reconfigurable DRAM and flash memory device
|
US7060592B2
(en)
*
|
2004-09-15 |
2006-06-13 |
United Microelectronics Corp. |
Image sensor and fabricating method thereof
|
US20060102963A1
(en)
*
|
2004-11-15 |
2006-05-18 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Passive device and method for forming the same
|
WO2006079952A1
(en)
*
|
2005-01-25 |
2006-08-03 |
Nxp B.V. |
Fabrication of phase-change resistor using a backend process
|
US20060177173A1
(en)
*
|
2005-02-04 |
2006-08-10 |
Sioptical, Inc. |
Vertical stacking of multiple integrated circuits including SOI-based optical components
|
US7470991B2
(en)
*
|
2005-02-24 |
2008-12-30 |
Texas Instruments Incorporated |
Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
|
US20060186450A1
(en)
*
|
2005-02-24 |
2006-08-24 |
Texas Instruments Inc. |
Integrated high voltage capacitor and a method of manufacture therefor
|
US20110001172A1
(en)
*
|
2005-03-29 |
2011-01-06 |
Sang-Yun Lee |
Three-dimensional integrated circuit structure
|
US8455978B2
(en)
|
2010-05-27 |
2013-06-04 |
Sang-Yun Lee |
Semiconductor circuit structure and method of making the same
|
US8367524B2
(en)
|
2005-03-29 |
2013-02-05 |
Sang-Yun Lee |
Three-dimensional integrated circuit structure
|
KR100663360B1
(en)
*
|
2005-04-20 |
2007-01-02 |
삼성전자주식회사 |
Semiconductor devices having thin film transistor and fabrication methods thereof
|
EP1717861B1
(en)
*
|
2005-04-27 |
2010-08-25 |
STMicroelectronics Srl |
Vertical MOSFET transistor operating as a selector in nonvolatile memory devices
|
US7638855B2
(en)
*
|
2005-05-06 |
2009-12-29 |
Macronix International Co., Ltd. |
Anti-fuse one-time-programmable nonvolatile memory
|
US8044437B1
(en)
*
|
2005-05-16 |
2011-10-25 |
Lsi Logic Corporation |
Integrated circuit cell architecture configurable for memory or logic elements
|
US20060273298A1
(en)
*
|
2005-06-02 |
2006-12-07 |
Matrix Semiconductor, Inc. |
Rewriteable memory cell comprising a transistor and resistance-switching material in series
|
US20060273370A1
(en)
*
|
2005-06-07 |
2006-12-07 |
Micron Technology, Inc. |
NROM flash memory with vertical transistors and surrounding gates
|
US7851348B2
(en)
|
2005-06-14 |
2010-12-14 |
Abhay Misra |
Routingless chip architecture
|
JP5253158B2
(en)
*
|
2005-06-14 |
2013-07-31 |
キューファー アセット リミテッド. エル.エル.シー. |
Post and penetration interconnection
|
US7215032B2
(en)
*
|
2005-06-14 |
2007-05-08 |
Cubic Wafer, Inc. |
Triaxial through-chip connection
|
US7884483B2
(en)
|
2005-06-14 |
2011-02-08 |
Cufer Asset Ltd. L.L.C. |
Chip connector
|
US7687400B2
(en)
|
2005-06-14 |
2010-03-30 |
John Trezza |
Side stacking apparatus and method
|
US7560813B2
(en)
|
2005-06-14 |
2009-07-14 |
John Trezza |
Chip-based thermo-stack
|
US7388273B2
(en)
|
2005-06-14 |
2008-06-17 |
International Business Machines Corporation |
Reprogrammable fuse structure and method
|
US7781886B2
(en)
|
2005-06-14 |
2010-08-24 |
John Trezza |
Electronic chip contact structure
|
US7786592B2
(en)
|
2005-06-14 |
2010-08-31 |
John Trezza |
Chip capacitive coupling
|
US7838997B2
(en)
|
2005-06-14 |
2010-11-23 |
John Trezza |
Remote chip attachment
|
US8456015B2
(en)
|
2005-06-14 |
2013-06-04 |
Cufer Asset Ltd. L.L.C. |
Triaxial through-chip connection
|
US7453755B2
(en)
*
|
2005-07-01 |
2008-11-18 |
Sandisk 3D Llc |
Memory cell with high-K antifuse for reverse bias programming
|
US7426128B2
(en)
*
|
2005-07-11 |
2008-09-16 |
Sandisk 3D Llc |
Switchable resistive memory with opposite polarity write pulses
|
US7482615B2
(en)
*
|
2005-07-21 |
2009-01-27 |
International Business Machines Corporation |
High performance MOSFET comprising stressed phase change material
|
US7776715B2
(en)
*
|
2005-07-26 |
2010-08-17 |
Micron Technology, Inc. |
Reverse construction memory cell
|
US7579615B2
(en)
*
|
2005-08-09 |
2009-08-25 |
Micron Technology, Inc. |
Access transistor for memory device
|
US20070034922A1
(en)
*
|
2005-08-11 |
2007-02-15 |
Micron Technology, Inc. |
Integrated surround gate multifunctional memory device
|
JP2007087548A
(en)
*
|
2005-09-26 |
2007-04-05 |
Nec Lcd Technologies Ltd |
Memory circuit
|
US8513066B2
(en)
*
|
2005-10-25 |
2013-08-20 |
Freescale Semiconductor, Inc. |
Method of making an inverted-T channel transistor
|
US7494849B2
(en)
*
|
2005-11-03 |
2009-02-24 |
Cswitch Inc. |
Methods for fabricating multi-terminal phase change devices
|
CN1992173B
(en)
*
|
2005-11-30 |
2010-04-21 |
硅起源股份有限公司 |
Method and structure for implanting bonded substrates for electrical conductivity
|
US7345899B2
(en)
*
|
2006-04-07 |
2008-03-18 |
Infineon Technologies Ag |
Memory having storage locations within a common volume of phase change material
|
US7687397B2
(en)
|
2006-06-06 |
2010-03-30 |
John Trezza |
Front-end processed wafer having through-chip connections
|
US7781797B2
(en)
*
|
2006-06-29 |
2010-08-24 |
International Business Machines Corporation |
One-transistor static random access memory with integrated vertical PNPN device
|
KR100791071B1
(en)
*
|
2006-07-04 |
2008-01-02 |
삼성전자주식회사 |
One time programmable device, electronic system including the same and operating method of the same
|
DE102006037510B3
(en)
*
|
2006-08-10 |
2008-04-10 |
Infineon Technologies Austria Ag |
A method for producing a trench structure, the use of this method for producing a semiconductor device and semiconductor device having a trench structure
|
US7582549B2
(en)
|
2006-08-25 |
2009-09-01 |
Micron Technology, Inc. |
Atomic layer deposited barium strontium titanium oxide films
|
JP5341327B2
(en)
*
|
2006-09-28 |
2013-11-13 |
セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー |
Semiconductor device
|
US8866194B2
(en)
*
|
2006-09-28 |
2014-10-21 |
Semiconductor Components Industries, Llc |
Semiconductor device
|
CN101553903B
(en)
*
|
2006-10-17 |
2012-08-29 |
丘费尔资产股份有限公司 |
Wafer via formation
|
US20080113505A1
(en)
*
|
2006-11-13 |
2008-05-15 |
Sparks Terry G |
Method of forming a through-substrate via
|
US7593248B2
(en)
*
|
2006-11-16 |
2009-09-22 |
Aptina Imaging Corporation |
Method, apparatus and system providing a one-time programmable memory device
|
US7875840B2
(en)
*
|
2006-11-16 |
2011-01-25 |
Aptina Imaging Corporation |
Imager device with anti-fuse pixels and recessed color filter array
|
US8283718B2
(en)
*
|
2006-12-16 |
2012-10-09 |
Spansion Llc |
Integrated circuit system with metal and semi-conducting gate
|
US7705613B2
(en)
*
|
2007-01-03 |
2010-04-27 |
Abhay Misra |
Sensitivity capacitive sensor
|
KR100891799B1
(en)
*
|
2007-02-06 |
2009-04-07 |
삼성전기주식회사 |
Light emitting device for alternating current source
|
US7803693B2
(en)
*
|
2007-02-15 |
2010-09-28 |
John Trezza |
Bowed wafer hybridization compensation
|
US7598163B2
(en)
*
|
2007-02-15 |
2009-10-06 |
John Callahan |
Post-seed deposition process
|
US7705632B2
(en)
*
|
2007-02-15 |
2010-04-27 |
Wyman Theodore J Ted |
Variable off-chip drive
|
US7670874B2
(en)
*
|
2007-02-16 |
2010-03-02 |
John Trezza |
Plated pillar package formation
|
JP5114968B2
(en)
*
|
2007-02-20 |
2013-01-09 |
富士通セミコンダクター株式会社 |
Semiconductor device and manufacturing method thereof
|
KR100819560B1
(en)
*
|
2007-03-26 |
2008-04-08 |
삼성전자주식회사 |
Phase change memory device and method of fabricating the same
|
US7850060B2
(en)
*
|
2007-04-05 |
2010-12-14 |
John Trezza |
Heat cycle-able connection
|
US7748116B2
(en)
*
|
2007-04-05 |
2010-07-06 |
John Trezza |
Mobile binding in an electronic connection
|
US7704788B2
(en)
*
|
2007-04-06 |
2010-04-27 |
Samsung Electronics Co., Ltd. |
Methods of fabricating multi-bit phase-change memory devices and devices formed thereby
|
US7960210B2
(en)
*
|
2007-04-23 |
2011-06-14 |
Cufer Asset Ltd. L.L.C. |
Ultra-thin chip packaging
|
US20080261392A1
(en)
*
|
2007-04-23 |
2008-10-23 |
John Trezza |
Conductive via formation
|
US7842999B2
(en)
*
|
2007-05-17 |
2010-11-30 |
Elpida Memory, Inc. |
Semiconductor memory device and method of manufacturing the same
|
JP4690438B2
(en)
*
|
2007-05-31 |
2011-06-01 |
エルピーダメモリ株式会社 |
Semiconductor memory device, manufacturing method thereof, and data processing system
|
US7932167B2
(en)
*
|
2007-06-29 |
2011-04-26 |
International Business Machines Corporation |
Phase change memory cell with vertical transistor
|
JP5298470B2
(en)
*
|
2007-07-11 |
2013-09-25 |
三菱電機株式会社 |
Semiconductor device and method for manufacturing semiconductor device
|
US8247861B2
(en)
*
|
2007-07-18 |
2012-08-21 |
Infineon Technologies Ag |
Semiconductor device and method of making same
|
US20090026524A1
(en)
*
|
2007-07-27 |
2009-01-29 |
Franz Kreupl |
Stacked Circuits
|
US7847586B2
(en)
*
|
2007-08-20 |
2010-12-07 |
Northern Lights Semiconductor Corp. |
Integrate circuit chip with magnetic devices
|
JP2009064860A
(en)
*
|
2007-09-05 |
2009-03-26 |
Renesas Technology Corp |
Semiconductor device
|
US20090086521A1
(en)
*
|
2007-09-28 |
2009-04-02 |
Herner S Brad |
Multiple antifuse memory cells and methods to form, program, and sense the same
|
US8415783B1
(en)
|
2007-10-04 |
2013-04-09 |
Xilinx, Inc. |
Apparatus and methodology for testing stacked die
|
US7518398B1
(en)
*
|
2007-10-04 |
2009-04-14 |
Xilinx, Inc. |
Integrated circuit with through-die via interface for die stacking
|
US8133745B2
(en)
*
|
2007-10-17 |
2012-03-13 |
Magic Technologies, Inc. |
Method of magnetic tunneling layer processes for spin-transfer torque MRAM
|
US8183628B2
(en)
|
2007-10-29 |
2012-05-22 |
Unisantis Electronics Singapore Pte Ltd. |
Semiconductor structure and method of fabricating the semiconductor structure
|
US8035126B2
(en)
*
|
2007-10-29 |
2011-10-11 |
International Business Machines Corporation |
One-transistor static random access memory with integrated vertical PNPN device
|
US20090109582A1
(en)
*
|
2007-10-30 |
2009-04-30 |
Jack Michael D |
Method of protecting circuits using integrated array fuse elements and process for fabrication
|
KR100855403B1
(en)
*
|
2007-11-27 |
2008-08-29 |
주식회사 동부하이텍 |
Image sensor and method for manufacturing the same
|
US7902051B2
(en)
*
|
2008-01-07 |
2011-03-08 |
International Business Machines Corporation |
Method for fabrication of single crystal diodes for resistive memories
|
US8217380B2
(en)
*
|
2008-01-09 |
2012-07-10 |
International Business Machines Corporation |
Polysilicon emitter BJT access device for PCRAM
|
JP5317343B2
(en)
|
2009-04-28 |
2013-10-16 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッド |
Semiconductor device and manufacturing method thereof
|
WO2009095998A1
(en)
*
|
2008-01-29 |
2009-08-06 |
Unisantis Electronics (Japan) Ltd. |
Semiconductor storage device
|
US8598650B2
(en)
*
|
2008-01-29 |
2013-12-03 |
Unisantis Electronics Singapore Pte Ltd. |
Semiconductor device and production method therefor
|
US8378425B2
(en)
*
|
2008-01-29 |
2013-02-19 |
Unisantis Electronics Singapore Pte Ltd. |
Semiconductor storage device
|
US7906818B2
(en)
*
|
2008-03-13 |
2011-03-15 |
Micron Technology, Inc. |
Memory array with a pair of memory-cell strings to a single conductive pillar
|
US7973555B1
(en)
|
2008-05-28 |
2011-07-05 |
Xilinx, Inc. |
Configuration interface to stacked FPGA
|
US7974119B2
(en)
|
2008-07-10 |
2011-07-05 |
Seagate Technology Llc |
Transmission gate-based spin-transfer torque memory unit
|
JP4751432B2
(en)
*
|
2008-09-26 |
2011-08-17 |
シャープ株式会社 |
Semiconductor memory device
|
KR101124857B1
(en)
*
|
2008-09-30 |
2012-03-27 |
주식회사 동부하이텍 |
Image Sensor and Method for Manufacturing thereof
|
US8395206B2
(en)
*
|
2008-10-09 |
2013-03-12 |
Samsung Electronics Co., Ltd. |
Semiconductor device and method of fabricating the same
|
KR101502585B1
(en)
*
|
2008-10-09 |
2015-03-24 |
삼성전자주식회사 |
Vertical type semiconductor device and forming method of the same
|
US9030867B2
(en)
|
2008-10-20 |
2015-05-12 |
Seagate Technology Llc |
Bipolar CMOS select device for resistive sense memory
|
US7936580B2
(en)
|
2008-10-20 |
2011-05-03 |
Seagate Technology Llc |
MRAM diode array and access method
|
US7936583B2
(en)
|
2008-10-30 |
2011-05-03 |
Seagate Technology Llc |
Variable resistive memory punchthrough access method
|
US7825478B2
(en)
|
2008-11-07 |
2010-11-02 |
Seagate Technology Llc |
Polarity dependent switch for resistive sense memory
|
US8178864B2
(en)
|
2008-11-18 |
2012-05-15 |
Seagate Technology Llc |
Asymmetric barrier diode
|
TWI418027B
(en)
*
|
2008-11-28 |
2013-12-01 |
Powerchip Technology Corp |
Phase-change memory devices and methods for fabricating the same
|
US8203869B2
(en)
|
2008-12-02 |
2012-06-19 |
Seagate Technology Llc |
Bit line charge accumulation sensing for resistive changing memory
|
US8278167B2
(en)
*
|
2008-12-18 |
2012-10-02 |
Micron Technology, Inc. |
Method and structure for integrating capacitor-less memory cell with logic
|
US8837204B2
(en)
|
2009-02-15 |
2014-09-16 |
NDEP Technologies Ltd. |
Four-transistor and five-transistor BJT-CMOS asymmetric SRAM cells
|
KR20100111531A
(en)
|
2009-04-07 |
2010-10-15 |
삼성전자주식회사 |
Memory devices having diodes and methods of fabricating the same
|
US8258810B2
(en)
|
2010-09-30 |
2012-09-04 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8362800B2
(en)
|
2010-10-13 |
2013-01-29 |
Monolithic 3D Inc. |
3D semiconductor device including field repairable logics
|
US8373439B2
(en)
|
2009-04-14 |
2013-02-12 |
Monolithic 3D Inc. |
3D semiconductor device
|
US9711407B2
(en)
*
|
2009-04-14 |
2017-07-18 |
Monolithic 3D Inc. |
Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
|
US8669778B1
(en)
|
2009-04-14 |
2014-03-11 |
Monolithic 3D Inc. |
Method for design and manufacturing of a 3D semiconductor device
|
US8754533B2
(en)
|
2009-04-14 |
2014-06-17 |
Monolithic 3D Inc. |
Monolithic three-dimensional semiconductor device and structure
|
US8384426B2
(en)
|
2009-04-14 |
2013-02-26 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8395191B2
(en)
*
|
2009-10-12 |
2013-03-12 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US9577642B2
(en)
|
2009-04-14 |
2017-02-21 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device
|
US8378715B2
(en)
|
2009-04-14 |
2013-02-19 |
Monolithic 3D Inc. |
Method to construct systems
|
US8405420B2
(en)
|
2009-04-14 |
2013-03-26 |
Monolithic 3D Inc. |
System comprising a semiconductor device and structure
|
US9509313B2
(en)
|
2009-04-14 |
2016-11-29 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8362482B2
(en)
|
2009-04-14 |
2013-01-29 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8427200B2
(en)
|
2009-04-14 |
2013-04-23 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8058137B1
(en)
|
2009-04-14 |
2011-11-15 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US7986042B2
(en)
|
2009-04-14 |
2011-07-26 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US7964916B2
(en)
|
2009-04-14 |
2011-06-21 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
JP4487221B1
(en)
*
|
2009-04-17 |
2010-06-23 |
日本ユニサンティスエレクトロニクス株式会社 |
Semiconductor device
|
US8350316B2
(en)
|
2009-05-22 |
2013-01-08 |
Macronix International Co., Ltd. |
Phase change memory cells having vertical channel access transistor and memory plane
|
US7968876B2
(en)
|
2009-05-22 |
2011-06-28 |
Macronix International Co., Ltd. |
Phase change memory cell having vertical channel access transistor
|
US8159856B2
(en)
|
2009-07-07 |
2012-04-17 |
Seagate Technology Llc |
Bipolar select device for resistive sense memory
|
US8183126B2
(en)
|
2009-07-13 |
2012-05-22 |
Seagate Technology Llc |
Patterning embedded control lines for vertically stacked semiconductor elements
|
US8208285B2
(en)
*
|
2009-07-13 |
2012-06-26 |
Seagate Technology Llc |
Vertical non-volatile switch with punchthrough access and method of fabrication therefor
|
US8158964B2
(en)
|
2009-07-13 |
2012-04-17 |
Seagate Technology Llc |
Schottky diode switch and memory units containing the same
|
US8063654B2
(en)
*
|
2009-07-17 |
2011-11-22 |
Xilinx, Inc. |
Apparatus and method for testing of stacked die structure
|
JP4987926B2
(en)
*
|
2009-09-16 |
2012-08-01 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッド |
Semiconductor device
|
US8294212B2
(en)
*
|
2009-09-18 |
2012-10-23 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods and apparatus for SRAM bit cell with low standby current, low supply voltage and high speed
|
US8399935B2
(en)
*
|
2009-09-18 |
2013-03-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Embedded SRAM memory for low power applications
|
JP5356970B2
(en)
*
|
2009-10-01 |
2013-12-04 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッド |
Semiconductor device
|
US9099424B1
(en)
|
2012-08-10 |
2015-08-04 |
Monolithic 3D Inc. |
Semiconductor system, device and structure with heat removal
|
US8536023B2
(en)
|
2010-11-22 |
2013-09-17 |
Monolithic 3D Inc. |
Method of manufacturing a semiconductor device and structure
|
US11018133B2
(en)
|
2009-10-12 |
2021-05-25 |
Monolithic 3D Inc. |
3D integrated circuit
|
US8581349B1
(en)
|
2011-05-02 |
2013-11-12 |
Monolithic 3D Inc. |
3D memory semiconductor device and structure
|
US10388863B2
(en)
|
2009-10-12 |
2019-08-20 |
Monolithic 3D Inc. |
3D memory device and structure
|
US8450804B2
(en)
|
2011-03-06 |
2013-05-28 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US10910364B2
(en)
|
2009-10-12 |
2021-02-02 |
Monolitaic 3D Inc. |
3D semiconductor device
|
US10354995B2
(en)
|
2009-10-12 |
2019-07-16 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US8742476B1
(en)
|
2012-11-27 |
2014-06-03 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11374118B2
(en)
|
2009-10-12 |
2022-06-28 |
Monolithic 3D Inc. |
Method to form a 3D integrated circuit
|
US8476145B2
(en)
|
2010-10-13 |
2013-07-02 |
Monolithic 3D Inc. |
Method of fabricating a semiconductor device and structure
|
US10043781B2
(en)
|
2009-10-12 |
2018-08-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9892972B2
(en)
*
|
2009-10-12 |
2018-02-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10157909B2
(en)
|
2009-10-12 |
2018-12-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10366970B2
(en)
|
2009-10-12 |
2019-07-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8294159B2
(en)
|
2009-10-12 |
2012-10-23 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8841777B2
(en)
*
|
2010-01-12 |
2014-09-23 |
International Business Machines Corporation |
Bonded structure employing metal semiconductor alloy bonding
|
KR20220070577A
(en)
*
|
2010-02-05 |
2022-05-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
Semiconductor device and method for manufacturing semiconductor device
|
WO2011099342A1
(en)
*
|
2010-02-10 |
2011-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Field effect transistor
|
US8026521B1
(en)
|
2010-10-11 |
2011-09-27 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8461035B1
(en)
|
2010-09-30 |
2013-06-11 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8541819B1
(en)
|
2010-12-09 |
2013-09-24 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8373230B1
(en)
|
2010-10-13 |
2013-02-12 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US9099526B2
(en)
|
2010-02-16 |
2015-08-04 |
Monolithic 3D Inc. |
Integrated circuit device and structure
|
US8492886B2
(en)
|
2010-02-16 |
2013-07-23 |
Monolithic 3D Inc |
3D integrated circuit with logic
|
US8298875B1
(en)
|
2011-03-06 |
2012-10-30 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8513722B2
(en)
*
|
2010-03-02 |
2013-08-20 |
Micron Technology, Inc. |
Floating body cell structures, devices including same, and methods for forming same
|
US8507966B2
(en)
|
2010-03-02 |
2013-08-13 |
Micron Technology, Inc. |
Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
|
US9646869B2
(en)
*
|
2010-03-02 |
2017-05-09 |
Micron Technology, Inc. |
Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
|
US9608119B2
(en)
|
2010-03-02 |
2017-03-28 |
Micron Technology, Inc. |
Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
|
US8288795B2
(en)
|
2010-03-02 |
2012-10-16 |
Micron Technology, Inc. |
Thyristor based memory cells, devices and systems including the same and methods for forming the same
|
KR101211442B1
(en)
|
2010-03-08 |
2012-12-12 |
유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 |
Solid state imaging device
|
US8487357B2
(en)
|
2010-03-12 |
2013-07-16 |
Unisantis Electronics Singapore Pte Ltd. |
Solid state imaging device having high sensitivity and high pixel density
|
CN101834152B
(en)
*
|
2010-04-20 |
2012-08-22 |
中国科学院上海微系统与信息技术研究所 |
Method for manufacturing three-dimensionally stacked resistance conversion memory
|
US8723335B2
(en)
|
2010-05-20 |
2014-05-13 |
Sang-Yun Lee |
Semiconductor circuit structure and method of forming the same using a capping layer
|
KR101669244B1
(en)
|
2010-06-08 |
2016-10-25 |
삼성전자주식회사 |
Sram devices and methods for fabricating the same
|
JP5066590B2
(en)
*
|
2010-06-09 |
2012-11-07 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッド |
Semiconductor device and manufacturing method thereof
|
JP5087655B2
(en)
|
2010-06-15 |
2012-12-05 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッド |
Semiconductor device and manufacturing method thereof
|
KR101134819B1
(en)
|
2010-07-02 |
2012-04-13 |
이상윤 |
Method for fabricating semiconductor memory
|
US8455919B2
(en)
*
|
2010-07-19 |
2013-06-04 |
Micron Technology, Inc. |
High density thyristor random access memory device and method
|
US9953925B2
(en)
|
2011-06-28 |
2018-04-24 |
Monolithic 3D Inc. |
Semiconductor system and device
|
US8642416B2
(en)
|
2010-07-30 |
2014-02-04 |
Monolithic 3D Inc. |
Method of forming three dimensional integrated circuit devices using layer transfer technique
|
US8901613B2
(en)
|
2011-03-06 |
2014-12-02 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US9219005B2
(en)
|
2011-06-28 |
2015-12-22 |
Monolithic 3D Inc. |
Semiconductor system and device
|
WO2012015550A2
(en)
|
2010-07-30 |
2012-02-02 |
Monolithic 3D, Inc. |
Semiconductor device and structure
|
US10217667B2
(en)
|
2011-06-28 |
2019-02-26 |
Monolithic 3D Inc. |
3D semiconductor device, fabrication method and system
|
JP5075959B2
(en)
*
|
2010-09-14 |
2012-11-21 |
株式会社東芝 |
Resistance change memory
|
US8617952B2
(en)
*
|
2010-09-28 |
2013-12-31 |
Seagate Technology Llc |
Vertical transistor with hardening implatation
|
US8163581B1
(en)
|
2010-10-13 |
2012-04-24 |
Monolith IC 3D |
Semiconductor and optoelectronic devices
|
US9613844B2
(en)
*
|
2010-11-18 |
2017-04-04 |
Monolithic 3D Inc. |
3D semiconductor device having two layers of transistors
|
US8273610B2
(en)
|
2010-11-18 |
2012-09-25 |
Monolithic 3D Inc. |
Method of constructing a semiconductor device and structure
|
US10497713B2
(en)
|
2010-11-18 |
2019-12-03 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11217472B2
(en)
*
|
2010-12-16 |
2022-01-04 |
Monolithic 3D Inc. |
3D semiconductor device and structure with multiple isolation layers
|
US11482440B2
(en)
*
|
2010-12-16 |
2022-10-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
|
US11024673B1
(en)
*
|
2010-10-11 |
2021-06-01 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11600667B1
(en)
|
2010-10-11 |
2023-03-07 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US10825864B2
(en)
*
|
2010-10-11 |
2020-11-03 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10290682B2
(en)
|
2010-10-11 |
2019-05-14 |
Monolithic 3D Inc. |
3D IC semiconductor device and structure with stacked memory
|
US10896931B1
(en)
*
|
2010-10-11 |
2021-01-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8114757B1
(en)
|
2010-10-11 |
2012-02-14 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11133351B2
(en)
*
|
2010-10-11 |
2021-09-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11018191B1
(en)
|
2010-10-11 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11335731B1
(en)
*
|
2010-10-11 |
2022-05-17 |
Monolithic 3D Inc. |
3D semiconductor device and structure with transistors
|
US11158674B2
(en)
|
2010-10-11 |
2021-10-26 |
Monolithic 3D Inc. |
Method to produce a 3D semiconductor device and structure
|
US11469271B2
(en)
|
2010-10-11 |
2022-10-11 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US11315980B1
(en)
*
|
2010-10-11 |
2022-04-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure with transistors
|
US11227897B2
(en)
|
2010-10-11 |
2022-01-18 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US11257867B1
(en)
|
2010-10-11 |
2022-02-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with oxide bonds
|
US10978501B1
(en)
|
2010-10-13 |
2021-04-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US11605663B2
(en)
|
2010-10-13 |
2023-03-14 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11855100B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11404466B2
(en)
|
2010-10-13 |
2022-08-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11063071B1
(en)
|
2010-10-13 |
2021-07-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US10679977B2
(en)
|
2010-10-13 |
2020-06-09 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US8283215B2
(en)
|
2010-10-13 |
2012-10-09 |
Monolithic 3D Inc. |
Semiconductor and optoelectronic devices
|
US11437368B2
(en)
|
2010-10-13 |
2022-09-06 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11869915B2
(en)
|
2010-10-13 |
2024-01-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US8379458B1
(en)
|
2010-10-13 |
2013-02-19 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11694922B2
(en)
|
2010-10-13 |
2023-07-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US10998374B1
(en)
|
2010-10-13 |
2021-05-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11327227B2
(en)
|
2010-10-13 |
2022-05-10 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US11163112B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US10943934B2
(en)
|
2010-10-13 |
2021-03-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11929372B2
(en)
|
2010-10-13 |
2024-03-12 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11133344B2
(en)
|
2010-10-13 |
2021-09-28 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11043523B1
(en)
|
2010-10-13 |
2021-06-22 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11855114B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11164898B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US9197804B1
(en)
|
2011-10-14 |
2015-11-24 |
Monolithic 3D Inc. |
Semiconductor and optoelectronic devices
|
US10833108B2
(en)
|
2010-10-13 |
2020-11-10 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US8361856B2
(en)
|
2010-11-01 |
2013-01-29 |
Micron Technology, Inc. |
Memory cells, arrays of memory cells, and methods of forming memory cells
|
US8329567B2
(en)
|
2010-11-03 |
2012-12-11 |
Micron Technology, Inc. |
Methods of forming doped regions in semiconductor substrates
|
US11355380B2
(en)
*
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
|
US11508605B2
(en)
|
2010-11-18 |
2022-11-22 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11004719B1
(en)
|
2010-11-18 |
2021-05-11 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11862503B2
(en)
*
|
2010-11-18 |
2024-01-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11610802B2
(en)
*
|
2010-11-18 |
2023-03-21 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
|
US11521888B2
(en)
*
|
2010-11-18 |
2022-12-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure with high-k metal gate transistors
|
US11923230B1
(en)
|
2010-11-18 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11018042B1
(en)
|
2010-11-18 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11569117B2
(en)
*
|
2010-11-18 |
2023-01-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11094576B1
(en)
*
|
2010-11-18 |
2021-08-17 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11031275B2
(en)
|
2010-11-18 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11482439B2
(en)
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
|
US11495484B2
(en)
|
2010-11-18 |
2022-11-08 |
Monolithic 3D Inc. |
3D semiconductor devices and structures with at least two single-crystal layers
|
US11342214B1
(en)
*
|
2010-11-18 |
2022-05-24 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11211279B2
(en)
|
2010-11-18 |
2021-12-28 |
Monolithic 3D Inc. |
Method for processing a 3D integrated circuit and structure
|
US11735462B2
(en)
|
2010-11-18 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11164770B1
(en)
*
|
2010-11-18 |
2021-11-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US11121021B2
(en)
|
2010-11-18 |
2021-09-14 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11355381B2
(en)
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11784082B2
(en)
|
2010-11-18 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11804396B2
(en)
*
|
2010-11-18 |
2023-10-31 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11443971B2
(en)
|
2010-11-18 |
2022-09-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11854857B1
(en)
*
|
2010-11-18 |
2023-12-26 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11107721B2
(en)
|
2010-11-18 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with NAND logic
|
US11901210B2
(en)
|
2010-11-18 |
2024-02-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11615977B2
(en)
|
2010-11-18 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11482438B2
(en)
*
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
CN102487087B
(en)
*
|
2010-12-01 |
2014-08-13 |
张家港丽恒光微电子科技有限公司 |
Thin-film transistor applied to three-dimensional on-chip integration system and manufacturing method of thin film transistor
|
US8648426B2
(en)
|
2010-12-17 |
2014-02-11 |
Seagate Technology Llc |
Tunneling transistors
|
JP6000560B2
(en)
*
|
2011-02-02 |
2016-09-28 |
株式会社半導体エネルギー研究所 |
Semiconductor memory device
|
US8598621B2
(en)
|
2011-02-11 |
2013-12-03 |
Micron Technology, Inc. |
Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
|
US8450175B2
(en)
|
2011-02-22 |
2013-05-28 |
Micron Technology, Inc. |
Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith
|
US8952418B2
(en)
|
2011-03-01 |
2015-02-10 |
Micron Technology, Inc. |
Gated bipolar junction transistors
|
US8975670B2
(en)
|
2011-03-06 |
2015-03-10 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US8519431B2
(en)
|
2011-03-08 |
2013-08-27 |
Micron Technology, Inc. |
Thyristors
|
US9673102B2
(en)
*
|
2011-04-01 |
2017-06-06 |
Micron Technology, Inc. |
Methods of forming vertical field-effect transistor with self-aligned contacts for memory devices with planar periphery/array and intermediate structures formed thereby
|
US8148174B1
(en)
*
|
2011-05-03 |
2012-04-03 |
Avalanche Technology, Inc. |
Magnetic tunnel junction (MTJ) formation with two-step process
|
US8313960B1
(en)
*
|
2011-05-03 |
2012-11-20 |
Avalanche Technology, Inc. |
Magnetic tunnel junction (MTJ) formation using multiple etching processes
|
TWI571058B
(en)
|
2011-05-18 |
2017-02-11 |
半導體能源研究所股份有限公司 |
Semiconductor device and method of driving semiconductor device
|
EP3534399A1
(en)
*
|
2011-05-24 |
2019-09-04 |
Sony Corporation |
Semiconductor device
|
JP5383744B2
(en)
*
|
2011-05-24 |
2014-01-08 |
株式会社日立製作所 |
Magnetic memory
|
US8569831B2
(en)
|
2011-05-27 |
2013-10-29 |
Micron Technology, Inc. |
Integrated circuit arrays and semiconductor constructions
|
US10388568B2
(en)
|
2011-06-28 |
2019-08-20 |
Monolithic 3D Inc. |
3D semiconductor device and system
|
KR101758759B1
(en)
|
2011-07-18 |
2017-07-17 |
삼성전자주식회사 |
Method and apparatus for feedback channel information in wireless communication system
|
US8772848B2
(en)
|
2011-07-26 |
2014-07-08 |
Micron Technology, Inc. |
Circuit structures, memory circuitry, and methods
|
US8609492B2
(en)
*
|
2011-07-27 |
2013-12-17 |
Micron Technology, Inc. |
Vertical memory cell
|
US8866121B2
(en)
|
2011-07-29 |
2014-10-21 |
Sandisk 3D Llc |
Current-limiting layer and a current-reducing layer in a memory device
|
US8659001B2
(en)
|
2011-09-01 |
2014-02-25 |
Sandisk 3D Llc |
Defect gradient to boost nonvolatile memory performance
|
US8564034B2
(en)
|
2011-09-08 |
2013-10-22 |
Unisantis Electronics Singapore Pte. Ltd. |
Solid-state imaging device
|
JP2013065638A
(en)
|
2011-09-15 |
2013-04-11 |
Elpida Memory Inc |
Semiconductor device
|
US8669601B2
(en)
|
2011-09-15 |
2014-03-11 |
Unisantis Electronics Singapore Pte. Ltd. |
Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
|
CN102306655B
(en)
*
|
2011-09-29 |
2013-03-06 |
清华大学 |
Three-dimensional storage device array structure and manufacturing method thereof
|
US8687399B2
(en)
|
2011-10-02 |
2014-04-01 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US9029173B2
(en)
*
|
2011-10-18 |
2015-05-12 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8637413B2
(en)
|
2011-12-02 |
2014-01-28 |
Sandisk 3D Llc |
Nonvolatile resistive memory element with a passivated switching layer
|
US8916478B2
(en)
|
2011-12-19 |
2014-12-23 |
Unisantis Electronics Singapore Pte. Ltd. |
Method for manufacturing semiconductor device and semiconductor device
|
US8772175B2
(en)
|
2011-12-19 |
2014-07-08 |
Unisantis Electronics Singapore Pte. Ltd. |
Method for manufacturing semiconductor device and semiconductor device
|
US8698119B2
(en)
|
2012-01-19 |
2014-04-15 |
Sandisk 3D Llc |
Nonvolatile memory device using a tunnel oxide as a current limiter element
|
JP5830400B2
(en)
*
|
2012-02-02 |
2015-12-09 |
ルネサスエレクトロニクス株式会社 |
Semiconductor device and manufacturing method of semiconductor device
|
JP2013161878A
(en)
|
2012-02-02 |
2013-08-19 |
Renesas Electronics Corp |
Semiconductor device and semiconductor device manufacturing method
|
US8686386B2
(en)
|
2012-02-17 |
2014-04-01 |
Sandisk 3D Llc |
Nonvolatile memory device using a varistor as a current limiter element
|
US8748938B2
(en)
|
2012-02-20 |
2014-06-10 |
Unisantis Electronics Singapore Pte. Ltd. |
Solid-state imaging device
|
US8754421B2
(en)
|
2012-02-24 |
2014-06-17 |
Raytheon Company |
Method for processing semiconductors using a combination of electron beam and optical lithography
|
US9312257B2
(en)
|
2012-02-29 |
2016-04-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6100559B2
(en)
|
2012-03-05 |
2017-03-22 |
株式会社半導体エネルギー研究所 |
Semiconductor memory device
|
US9036391B2
(en)
|
2012-03-06 |
2015-05-19 |
Micron Technology, Inc. |
Arrays of vertically-oriented transistors, memory arrays including vertically-oriented transistors, and memory cells
|
US9000557B2
(en)
|
2012-03-17 |
2015-04-07 |
Zvi Or-Bach |
Semiconductor device and structure
|
US11164811B2
(en)
|
2012-04-09 |
2021-11-02 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers and oxide-to-oxide bonding
|
US11735501B1
(en)
|
2012-04-09 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11594473B2
(en)
|
2012-04-09 |
2023-02-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11694944B1
(en)
|
2012-04-09 |
2023-07-04 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11881443B2
(en)
|
2012-04-09 |
2024-01-23 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US8557632B1
(en)
|
2012-04-09 |
2013-10-15 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US10600888B2
(en)
|
2012-04-09 |
2020-03-24 |
Monolithic 3D Inc. |
3D semiconductor device
|
US11616004B1
(en)
|
2012-04-09 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11088050B2
(en)
|
2012-04-09 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers
|
US11476181B1
(en)
|
2012-04-09 |
2022-10-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11410912B2
(en)
|
2012-04-09 |
2022-08-09 |
Monolithic 3D Inc. |
3D semiconductor device with vias and isolation layers
|
CN102751436A
(en)
*
|
2012-06-12 |
2012-10-24 |
清华大学 |
Vertical selection pipe, storage unit, three-dimensional memory array and operation method thereof
|
US9006060B2
(en)
|
2012-08-21 |
2015-04-14 |
Micron Technology, Inc. |
N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors
|
US9129896B2
(en)
|
2012-08-21 |
2015-09-08 |
Micron Technology, Inc. |
Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors
|
US9478550B2
(en)
|
2012-08-27 |
2016-10-25 |
Micron Technology, Inc. |
Arrays of vertically-oriented transistors, and memory arrays including vertically-oriented transistors
|
JP6128787B2
(en)
|
2012-09-28 |
2017-05-17 |
キヤノン株式会社 |
Semiconductor device
|
US8686428B1
(en)
*
|
2012-11-16 |
2014-04-01 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8574929B1
(en)
|
2012-11-16 |
2013-11-05 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11063024B1
(en)
|
2012-12-22 |
2021-07-13 |
Monlithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11784169B2
(en)
|
2012-12-22 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11018116B2
(en)
|
2012-12-22 |
2021-05-25 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11309292B2
(en)
|
2012-12-22 |
2022-04-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US8674470B1
(en)
|
2012-12-22 |
2014-03-18 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11916045B2
(en)
|
2012-12-22 |
2024-02-27 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11217565B2
(en)
|
2012-12-22 |
2022-01-04 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11430668B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11177140B2
(en)
|
2012-12-29 |
2021-11-16 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11004694B1
(en)
|
2012-12-29 |
2021-05-11 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9385058B1
(en)
|
2012-12-29 |
2016-07-05 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US9871034B1
(en)
|
2012-12-29 |
2018-01-16 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10651054B2
(en)
|
2012-12-29 |
2020-05-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10115663B2
(en)
|
2012-12-29 |
2018-10-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10600657B2
(en)
|
2012-12-29 |
2020-03-24 |
Monolithic 3D Inc |
3D semiconductor device and structure
|
US11430667B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US10903089B1
(en)
|
2012-12-29 |
2021-01-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10892169B2
(en)
|
2012-12-29 |
2021-01-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11087995B1
(en)
|
2012-12-29 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8951893B2
(en)
|
2013-01-03 |
2015-02-10 |
International Business Machines Corporation |
Fabricating polysilicon MOS devices and passive ESD devices
|
US8928142B2
(en)
*
|
2013-02-22 |
2015-01-06 |
Fairchild Semiconductor Corporation |
Apparatus related to capacitance reduction of a signal port
|
US9112047B2
(en)
|
2013-02-28 |
2015-08-18 |
Freescale Semiconductor, Inc. |
Split gate non-volatile memory (NVM) cell and method therefor
|
US20140241031A1
(en)
|
2013-02-28 |
2014-08-28 |
Sandisk 3D Llc |
Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
|
US8865530B2
(en)
|
2013-03-08 |
2014-10-21 |
International Business Machines Corporation |
Extremely thin semiconductor on insulator (ETSOI) logic and memory hybrid chip
|
US11935949B1
(en)
|
2013-03-11 |
2024-03-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US8902663B1
(en)
|
2013-03-11 |
2014-12-02 |
Monolithic 3D Inc. |
Method of maintaining a memory state
|
US11869965B2
(en)
|
2013-03-11 |
2024-01-09 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US10325651B2
(en)
|
2013-03-11 |
2019-06-18 |
Monolithic 3D Inc. |
3D semiconductor device with stacked memory
|
US11088130B2
(en)
|
2014-01-28 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10840239B2
(en)
|
2014-08-26 |
2020-11-17 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8994404B1
(en)
|
2013-03-12 |
2015-03-31 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11398569B2
(en)
|
2013-03-12 |
2022-07-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11923374B2
(en)
|
2013-03-12 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US9111853B2
(en)
|
2013-03-15 |
2015-08-18 |
Micron Technology, Inc. |
Methods of forming doped elements of semiconductor device structures
|
US9117749B1
(en)
|
2013-03-15 |
2015-08-25 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
CN103137646A
(en)
*
|
2013-03-15 |
2013-06-05 |
中国科学院微电子研究所 |
Strobing device unit used for cross array integration way of double-pole type resistance change storage
|
US10224279B2
(en)
|
2013-03-15 |
2019-03-05 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US9006816B2
(en)
|
2013-03-28 |
2015-04-14 |
Stmicroelectronics, Inc. |
Memory device having multiple dielectric gate stacks and related methods
|
US8860123B1
(en)
|
2013-03-28 |
2014-10-14 |
Stmicroelectronics, Inc. |
Memory device having multiple dielectric gate stacks with first and second dielectric layers and related methods
|
US11720736B2
(en)
|
2013-04-15 |
2023-08-08 |
Monolithic 3D Inc. |
Automation methods for 3D integrated circuits and devices
|
US11487928B2
(en)
|
2013-04-15 |
2022-11-01 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11270055B1
(en)
|
2013-04-15 |
2022-03-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11574109B1
(en)
|
2013-04-15 |
2023-02-07 |
Monolithic 3D Inc |
Automation methods for 3D integrated circuits and devices
|
US9021414B1
(en)
|
2013-04-15 |
2015-04-28 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11341309B1
(en)
|
2013-04-15 |
2022-05-24 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11030371B2
(en)
|
2013-04-15 |
2021-06-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
EP2884542A3
(en)
*
|
2013-12-10 |
2015-09-02 |
IMEC vzw |
Integrated circuit device with power gating switch in back end of line
|
US9129956B2
(en)
*
|
2013-12-11 |
2015-09-08 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Device having multiple-layer pins in memory MUX1 layout
|
US10297586B2
(en)
|
2015-03-09 |
2019-05-21 |
Monolithic 3D Inc. |
Methods for processing a 3D semiconductor device
|
US11107808B1
(en)
|
2014-01-28 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11031394B1
(en)
|
2014-01-28 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9379246B2
(en)
*
|
2014-03-05 |
2016-06-28 |
Sandisk Technologies Inc. |
Vertical thin film transistor selection devices and methods of fabrication
|
US10006899B2
(en)
|
2014-03-25 |
2018-06-26 |
Genia Technologies, Inc. |
Nanopore-based sequencing chips using stacked wafer technology
|
JP6635670B2
(en)
*
|
2014-04-11 |
2020-01-29 |
株式会社半導体エネルギー研究所 |
Semiconductor device
|
US9412736B2
(en)
*
|
2014-06-05 |
2016-08-09 |
Globalfoundries Inc. |
Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias
|
WO2015195084A1
(en)
*
|
2014-06-16 |
2015-12-23 |
Intel Corporation |
Embedded memory in interconnect stack on silicon die
|
US9985026B2
(en)
*
|
2014-08-15 |
2018-05-29 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Transistor, integrated circuit and method of fabricating the same
|
JP5989238B2
(en)
|
2014-08-28 |
2016-09-07 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
JP6065190B2
(en)
*
|
2014-09-05 |
2017-01-25 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. |
Semiconductor device
|
EP3007224A1
(en)
*
|
2014-10-08 |
2016-04-13 |
Nxp B.V. |
Metallisation for semiconductor device
|
US20160118404A1
(en)
*
|
2014-10-09 |
2016-04-28 |
Haibing Peng |
Three-dimensional non-volatile ferroelectric random access memory
|
US9589979B2
(en)
*
|
2014-11-19 |
2017-03-07 |
Macronix International Co., Ltd. |
Vertical and 3D memory devices and methods of manufacturing the same
|
US10950722B2
(en)
*
|
2014-12-31 |
2021-03-16 |
Stmicroelectronics, Inc. |
Vertical gate all-around transistor
|
US9431268B2
(en)
|
2015-01-05 |
2016-08-30 |
Lam Research Corporation |
Isotropic atomic layer etch for silicon and germanium oxides
|
US9425041B2
(en)
|
2015-01-06 |
2016-08-23 |
Lam Research Corporation |
Isotropic atomic layer etch for silicon oxides using no activation
|
WO2016163045A1
(en)
|
2015-04-06 |
2016-10-13 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッド |
Columnar semiconductor device having sgt, and method for manufacturing same
|
WO2016162927A1
(en)
|
2015-04-06 |
2016-10-13 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッド |
Columnar semiconductor memory device and method for manufacturing same
|
US10381328B2
(en)
|
2015-04-19 |
2019-08-13 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10825779B2
(en)
|
2015-04-19 |
2020-11-03 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11011507B1
(en)
|
2015-04-19 |
2021-05-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11056468B1
(en)
|
2015-04-19 |
2021-07-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
JP6175196B2
(en)
|
2015-07-08 |
2017-08-02 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. |
Columnar semiconductor memory device and manufacturing method thereof
|
US9460770B1
(en)
|
2015-09-01 |
2016-10-04 |
Micron Technology, Inc. |
Methods of operating ferroelectric memory cells, and related ferroelectric memory cells
|
JP6089081B1
(en)
*
|
2015-09-16 |
2017-03-01 |
株式会社東芝 |
Magnetic memory
|
CN115942752A
(en)
|
2015-09-21 |
2023-04-07 |
莫诺利特斯3D有限公司 |
3D semiconductor device and structure
|
US10522225B1
(en)
|
2015-10-02 |
2019-12-31 |
Monolithic 3D Inc. |
Semiconductor device with non-volatile memory
|
US10229916B2
(en)
|
2015-10-09 |
2019-03-12 |
Unisantis Electronics Singapore Pte. Ltd. |
Method for producing pillar-shaped semiconductor device
|
US10410932B2
(en)
|
2015-10-09 |
2019-09-10 |
Unisantis Electronics Singapore Pte. Ltd. |
Method for producing pillar-shaped semiconductor device
|
US10847540B2
(en)
|
2015-10-24 |
2020-11-24 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11114464B2
(en)
|
2015-10-24 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10418369B2
(en)
|
2015-10-24 |
2019-09-17 |
Monolithic 3D Inc. |
Multi-level semiconductor memory device and structure
|
US11296115B1
(en)
|
2015-10-24 |
2022-04-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11114427B2
(en)
|
2015-11-07 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor processor and memory device and structure
|
US11937422B2
(en)
|
2015-11-07 |
2024-03-19 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US9754660B2
(en)
|
2015-11-19 |
2017-09-05 |
Samsung Electronics Co., Ltd. |
Semiconductor device
|
WO2017104066A1
(en)
*
|
2015-12-18 |
2017-06-22 |
ユニサンティス エレクトロニクス シンガポール プライベート リミテッド |
Sgt-including semiconductor device and method for producing same
|
US10128253B2
(en)
|
2016-01-29 |
2018-11-13 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Two-port SRAM structure
|
US10043796B2
(en)
|
2016-02-01 |
2018-08-07 |
Qualcomm Incorporated |
Vertically stacked nanowire field effect transistors
|
FR3049761B1
(en)
*
|
2016-03-31 |
2018-10-05 |
Soitec |
METHOD FOR MANUFACTURING A STRUCTURE FOR FORMING A THREE DIMENSIONAL MONOLITHIC INTEGRATED CIRCUIT
|
JP6097434B2
(en)
*
|
2016-04-28 |
2017-03-15 |
ルネサスエレクトロニクス株式会社 |
Semiconductor device and manufacturing method of semiconductor device
|
KR102208380B1
(en)
*
|
2016-08-31 |
2021-01-28 |
마이크론 테크놀로지, 인크 |
Memory cells and memory arrays
|
US10438838B2
(en)
*
|
2016-09-01 |
2019-10-08 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor structure and related method
|
US11251149B2
(en)
|
2016-10-10 |
2022-02-15 |
Monolithic 3D Inc. |
3D memory device and structure
|
US11812620B2
(en)
|
2016-10-10 |
2023-11-07 |
Monolithic 3D Inc. |
3D DRAM memory devices and structures with control circuits
|
US11869591B2
(en)
|
2016-10-10 |
2024-01-09 |
Monolithic 3D Inc. |
3D memory devices and structures with control circuits
|
US11329059B1
(en)
|
2016-10-10 |
2022-05-10 |
Monolithic 3D Inc. |
3D memory devices and structures with thinned single crystal substrates
|
US11711928B2
(en)
|
2016-10-10 |
2023-07-25 |
Monolithic 3D Inc. |
3D memory devices and structures with control circuits
|
US11930648B1
(en)
|
2016-10-10 |
2024-03-12 |
Monolithic 3D Inc. |
3D memory devices and structures with metal layers
|
KR101928629B1
(en)
|
2016-12-01 |
2018-12-12 |
한양대학교 산학협력단 |
Two-terminal vertical 1-t dram and manufacturing method thereof
|
US10361128B2
(en)
|
2017-01-11 |
2019-07-23 |
International Business Machines Corporation |
3D vertical FET with top and bottom gate contacts
|
US9875784B1
(en)
*
|
2017-04-13 |
2018-01-23 |
Qualcomm Incorporated |
Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems
|
US20180358352A1
(en)
*
|
2017-06-08 |
2018-12-13 |
Silicet, LLC |
Structure, method, and circuit for electrostatic discharge protection utilizing a rectifying contact
|
CN110603640B
(en)
*
|
2017-07-17 |
2023-06-27 |
美光科技公司 |
Memory circuit system
|
JP2019057554A
(en)
*
|
2017-09-20 |
2019-04-11 |
東芝メモリ株式会社 |
Storage device
|
US10896979B2
(en)
*
|
2017-09-28 |
2021-01-19 |
International Business Machines Corporation |
Compact vertical injection punch through floating gate analog memory and a manufacture thereof
|
US10833078B2
(en)
*
|
2017-12-04 |
2020-11-10 |
Tokyo Electron Limited |
Semiconductor apparatus having stacked gates and method of manufacture thereof
|
US10658425B2
(en)
|
2017-12-28 |
2020-05-19 |
Spin Memory, Inc. |
Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels
|
US11222970B2
(en)
|
2017-12-28 |
2022-01-11 |
Integrated Silicon Solution, (Cayman) Inc. |
Perpendicular magnetic tunnel junction memory cells having vertical channels
|
US10468293B2
(en)
*
|
2017-12-28 |
2019-11-05 |
Spin Memory, Inc. |
Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels
|
US10460778B2
(en)
|
2017-12-29 |
2019-10-29 |
Spin Memory, Inc. |
Perpendicular magnetic tunnel junction memory cells having shared source contacts
|
US10283411B1
(en)
*
|
2018-01-02 |
2019-05-07 |
International Business Machines Corporation |
Stacked vertical transistor device for three-dimensional monolithic integration
|
US10790271B2
(en)
*
|
2018-04-17 |
2020-09-29 |
International Business Machines Corporation |
Perpendicular stacked field-effect transistor device
|
US10840254B2
(en)
|
2018-05-22 |
2020-11-17 |
Macronix International Co., Ltd. |
Pitch scalable 3D NAND
|
WO2019226341A1
(en)
|
2018-05-25 |
2019-11-28 |
Lam Research Corporation |
Thermal atomic layer etch with rapid temperature cycling
|
EP3821457A4
(en)
|
2018-07-09 |
2022-04-13 |
Lam Research Corporation |
Electron excitation atomic layer etch
|
JP2020047642A
(en)
|
2018-09-14 |
2020-03-26 |
キオクシア株式会社 |
Semiconductor storage device
|
US10607938B1
(en)
*
|
2018-10-26 |
2020-03-31 |
International Business Machines Corporation |
Power distribution networks for monolithic three-dimensional semiconductor integrated circuit devices
|
CN111293137A
(en)
*
|
2018-12-07 |
2020-06-16 |
中国科学院上海微系统与信息技术研究所 |
Three-dimensional MRAM storage structure based on two-dimensional CMOS and manufacturing method thereof
|
CN111435658B
(en)
*
|
2019-01-14 |
2023-05-23 |
联华电子股份有限公司 |
Method for forming memory stacking structure
|
US11107827B2
(en)
|
2019-02-28 |
2021-08-31 |
International Business Machines Corporation |
Integration of split gate metal-oxide-nitride-oxide-semiconductor memory with vertical FET
|
CN111755445A
(en)
*
|
2019-03-29 |
2020-10-09 |
长鑫存储技术有限公司 |
Method for manufacturing semiconductor structure
|
US11018156B2
(en)
|
2019-04-08 |
2021-05-25 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11158652B1
(en)
|
2019-04-08 |
2021-10-26 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11763864B2
(en)
|
2019-04-08 |
2023-09-19 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures with bit-line pillars
|
US11296106B2
(en)
|
2019-04-08 |
2022-04-05 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US10892016B1
(en)
|
2019-04-08 |
2021-01-12 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11228174B1
(en)
|
2019-05-30 |
2022-01-18 |
Silicet, LLC |
Source and drain enabled conduction triggers and immunity tolerance for integrated circuits
|
US10971447B2
(en)
*
|
2019-06-24 |
2021-04-06 |
International Business Machines Corporation |
BEOL electrical fuse
|
KR20210012710A
(en)
|
2019-07-26 |
2021-02-03 |
에스케이하이닉스 주식회사 |
Vertical memory device and method for fabricating vertical memory device
|
US11411025B2
(en)
|
2019-10-23 |
2022-08-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
3D ferroelectric memory
|
DE102020119199A1
(en)
|
2019-10-23 |
2021-04-29 |
Taiwan Semiconductor Manufacturing Co. Ltd. |
3D FERROELECTRIC MEMORY
|
KR20210052928A
(en)
*
|
2019-11-01 |
2021-05-11 |
에스케이하이닉스 주식회사 |
Semiconductor memory device and manufacturing method thereof
|
US10892362B1
(en)
|
2019-11-06 |
2021-01-12 |
Silicet, LLC |
Devices for LDMOS and other MOS transistors with hybrid contact
|
FR3105748B1
(en)
*
|
2019-12-26 |
2022-09-02 |
Aledia |
Device for laser treatment and laser treatment method
|
US11476248B2
(en)
*
|
2019-12-26 |
2022-10-18 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Three dimensional integrated circuit and fabrication thereof
|
US11302865B2
(en)
*
|
2019-12-26 |
2022-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Phase-change memory with two-portioned phase-change layer
|
KR102226206B1
(en)
*
|
2020-02-06 |
2021-03-11 |
포항공과대학교 산학협력단 |
Memory device including double PN junctions and driving method thereof
|
US11508817B2
(en)
*
|
2020-05-28 |
2022-11-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Passivation layer for epitaxial semiconductor process
|
DE102020125995A1
(en)
*
|
2020-05-28 |
2021-12-02 |
Taiwan Semiconductor Manufacturing Co. Ltd. |
PASSIVATION LAYER FOR EPITACTIC SEMICONDUCTOR PROCESS
|
US11430797B2
(en)
|
2020-06-30 |
2022-08-30 |
Qualcomm Incorporated |
Package embedded programmable resistor for voltage droop mitigation
|
US11527623B2
(en)
*
|
2020-07-28 |
2022-12-13 |
Micron Technology, Inc. |
Integrated assemblies and methods of forming integrated assemblies
|
EP4200911A1
(en)
|
2020-12-04 |
2023-06-28 |
Amplexia, LLC |
Ldmos with self-aligned body and hybrid source
|
CN113053900B
(en)
*
|
2021-03-22 |
2023-01-20 |
长鑫存储技术有限公司 |
Semiconductor structure and manufacturing method thereof
|
CN113078625B
(en)
*
|
2021-03-24 |
2023-02-17 |
重庆邮电大学 |
Surge protection array based on chalcogenide compound and preparation method
|
CN113206099A
(en)
*
|
2021-05-06 |
2021-08-03 |
长江先进存储产业创新中心有限责任公司 |
Semiconductor device and method for manufacturing the same
|