WO2005028992A3 - Line profile asymmetry measurement - Google Patents

Line profile asymmetry measurement Download PDF

Info

Publication number
WO2005028992A3
WO2005028992A3 PCT/US2004/030115 US2004030115W WO2005028992A3 WO 2005028992 A3 WO2005028992 A3 WO 2005028992A3 US 2004030115 W US2004030115 W US 2004030115W WO 2005028992 A3 WO2005028992 A3 WO 2005028992A3
Authority
WO
WIPO (PCT)
Prior art keywords
microelectronic
array
light
features
line profile
Prior art date
Application number
PCT/US2004/030115
Other languages
French (fr)
Other versions
WO2005028992A2 (en
Inventor
Chris Raymond
Original Assignee
Accent Optical Tech Inc
Chris Raymond
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Accent Optical Tech Inc, Chris Raymond filed Critical Accent Optical Tech Inc
Priority to US10/571,418 priority Critical patent/US7515279B2/en
Priority to JP2006526415A priority patent/JP2007505322A/en
Priority to EP04784089A priority patent/EP1678466A4/en
Publication of WO2005028992A2 publication Critical patent/WO2005028992A2/en
Publication of WO2005028992A3 publication Critical patent/WO2005028992A3/en
Priority to KR1020067005109A priority patent/KR101071654B1/en
Priority to US12/418,535 priority patent/US7639371B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
    • G01J3/24—Generating the spectrum; Monochromators using diffraction elements, e.g. grating using gratings profiled to favour a specific order
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

This disclosure provides methods for measuring asymmetry of features, such as lines of a diffraction grating. On implementation provides a method of measuring asymmetries in microelectronic devices by directing light at an array of microelectronic features of a microelectronic device. The light illuminates a portion of the array that encompasses the entire length and width of a plurality of the microelectronic features. Light scattered back from the array is detected. One or more characteristics of the back-scattered light may be examined by examining data from complementary angles of reflection. This can be particularly useful for arrays of small periodic structures for which standard modeling techniques would be impractically complex or take inordinate time.
PCT/US2004/030115 2001-03-02 2004-09-13 Line profile asymmetry measurement WO2005028992A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/571,418 US7515279B2 (en) 2001-03-02 2004-09-13 Line profile asymmetry measurement
JP2006526415A JP2007505322A (en) 2003-09-12 2004-09-13 Line profile asymmetry measurement
EP04784089A EP1678466A4 (en) 2003-09-12 2004-09-13 Line profile asymmetry measurement
KR1020067005109A KR101071654B1 (en) 2003-09-12 2006-03-13 Line Profile Asymmetry Measurement
US12/418,535 US7639371B2 (en) 2001-03-02 2009-04-03 Line profile asymmetry measurement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50244403P 2003-09-12 2003-09-12
US60/502,444 2003-09-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/086,339 Continuation-In-Part US6856408B2 (en) 2001-03-02 2002-02-28 Line profile asymmetry measurement using scatterometry

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10/571,418 A-371-Of-International US7515279B2 (en) 2001-03-02 2004-09-13 Line profile asymmetry measurement
US12/418,535 Continuation US7639371B2 (en) 2001-03-02 2009-04-03 Line profile asymmetry measurement

Publications (2)

Publication Number Publication Date
WO2005028992A2 WO2005028992A2 (en) 2005-03-31
WO2005028992A3 true WO2005028992A3 (en) 2005-10-13

Family

ID=34375259

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/030115 WO2005028992A2 (en) 2001-03-02 2004-09-13 Line profile asymmetry measurement

Country Status (5)

Country Link
EP (1) EP1678466A4 (en)
JP (1) JP2007505322A (en)
KR (1) KR101071654B1 (en)
CN (1) CN1879004A (en)
WO (1) WO2005028992A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7515279B2 (en) 2001-03-02 2009-04-07 Nanometrics Incorporated Line profile asymmetry measurement
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20080144036A1 (en) 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US20060187466A1 (en) * 2005-02-18 2006-08-24 Timbre Technologies, Inc. Selecting unit cell configuration for repeating structures in optical metrology
NL1036018A1 (en) * 2007-10-09 2009-04-15 Asml Netherlands Bv A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus.
JP5264374B2 (en) * 2008-09-02 2013-08-14 東京エレクトロン株式会社 Pattern shape inspection method and semiconductor device manufacturing method
US9239522B2 (en) * 2010-10-08 2016-01-19 Kla-Tencor Corporation Method of determining an asymmetric property of a structure
US10215559B2 (en) * 2014-10-16 2019-02-26 Kla-Tencor Corporation Metrology of multiple patterning processes
US9650039B2 (en) * 2015-03-20 2017-05-16 Ford Global Technologies, Llc Vehicle location accuracy
CN105004286B (en) * 2015-05-19 2017-12-22 哈尔滨工业大学 A kind of ultra-precise cutting finished surface three-dimensional micro-morphology measuring method based on laser beam diffraction hot spot characteristic
CN105091780A (en) * 2015-05-19 2015-11-25 哈尔滨工业大学 Ultra-precision turning surface three-dimensional microscopic morphology measuring device based on characteristic of diffraction light spot of laser beam
CN104897078B (en) * 2015-05-19 2017-12-22 哈尔滨工业大学 A kind of measuring method of the ultra-precise cutting finished surface three-dimensional micro-morphology based on visible reflectance spectrum characteristic
CN105180825A (en) * 2015-05-19 2015-12-23 哈尔滨工业大学 3D microscopic appearance measuring device of ultra-precise turning surface based on characteristic of visible-light reflection spectrum
CN112833790B (en) * 2021-01-21 2023-03-14 中国科学院微电子研究所 Method for reducing influence of asymmetry of phase grating on position measurement precision

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963329A (en) * 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4408884A (en) 1981-06-29 1983-10-11 Rca Corporation Optical measurements of fine line parameters in integrated circuit processes
US6900892B2 (en) * 2000-12-19 2005-05-31 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
EP1370828B1 (en) * 2001-03-02 2016-11-23 Accent Optical Technologies, Inc. Line profile asymmetry measurement using scatterometry
US6650422B2 (en) * 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
JP2003224057A (en) * 2002-01-30 2003-08-08 Hitachi Ltd Method of manufacturing semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963329A (en) * 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1678466A4 *

Also Published As

Publication number Publication date
WO2005028992A2 (en) 2005-03-31
EP1678466A2 (en) 2006-07-12
CN1879004A (en) 2006-12-13
EP1678466A4 (en) 2008-07-30
JP2007505322A (en) 2007-03-08
KR101071654B1 (en) 2011-10-11
KR20060116797A (en) 2006-11-15

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